JP2009246334A - 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 - Google Patents

光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 Download PDF

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Publication number
JP2009246334A
JP2009246334A JP2008304642A JP2008304642A JP2009246334A JP 2009246334 A JP2009246334 A JP 2009246334A JP 2008304642 A JP2008304642 A JP 2008304642A JP 2008304642 A JP2008304642 A JP 2008304642A JP 2009246334 A JP2009246334 A JP 2009246334A
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Japan
Prior art keywords
resin composition
thermosetting resin
optical semiconductor
light reflection
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008304642A
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English (en)
Japanese (ja)
Other versions
JP2009246334A5 (enrdf_load_stackoverflow
Inventor
Isato Kotani
勇人 小谷
Naoyuki Urasaki
直之 浦崎
Masato Mizutani
真人 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2008304642A priority Critical patent/JP2009246334A/ja
Publication of JP2009246334A publication Critical patent/JP2009246334A/ja
Publication of JP2009246334A5 publication Critical patent/JP2009246334A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Led Device Packages (AREA)
JP2008304642A 2008-03-12 2008-11-28 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 Pending JP2009246334A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008304642A JP2009246334A (ja) 2008-03-12 2008-11-28 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008062574 2008-03-12
JP2008304642A JP2009246334A (ja) 2008-03-12 2008-11-28 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Publications (2)

Publication Number Publication Date
JP2009246334A true JP2009246334A (ja) 2009-10-22
JP2009246334A5 JP2009246334A5 (enrdf_load_stackoverflow) 2011-12-01

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JP2008304642A Pending JP2009246334A (ja) 2008-03-12 2008-11-28 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

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JP (1) JP2009246334A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249786A (ja) * 2010-04-28 2011-12-08 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び発光装置
JP2012049519A (ja) * 2010-07-26 2012-03-08 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び発光装置
JP2012049505A (ja) * 2010-07-30 2012-03-08 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び半導体発光装置
US8338845B2 (en) 2010-01-29 2012-12-25 Kabushiki Kaisha Toshiba LED package and method for manufacturing the same
JP2014517518A (ja) * 2011-05-19 2014-07-17 晶能光電（江西）有限公司 窒化ガリウムベースフィルムチップの生産方法および製造方法
JP2020181924A (ja) * 2019-04-26 2020-11-05 日亜化学工業株式会社 発光装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07316459A (ja) * 1994-05-25 1995-12-05 Shin Etsu Chem Co Ltd 表面処理アルミナの製造方法
JP2006140207A (ja) * 2004-11-10 2006-06-01 Hitachi Chem Co Ltd 光反射用熱硬化性樹脂組成物、ならびにこれを用いた光半導体搭載用基板とその製造方法および光半導体装置。
JP2007297601A (ja) * 2006-04-06 2007-11-15 Hitachi Chem Co Ltd 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07316459A (ja) * 1994-05-25 1995-12-05 Shin Etsu Chem Co Ltd 表面処理アルミナの製造方法
JP2006140207A (ja) * 2004-11-10 2006-06-01 Hitachi Chem Co Ltd 光反射用熱硬化性樹脂組成物、ならびにこれを用いた光半導体搭載用基板とその製造方法および光半導体装置。
JP2007297601A (ja) * 2006-04-06 2007-11-15 Hitachi Chem Co Ltd 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338845B2 (en) 2010-01-29 2012-12-25 Kabushiki Kaisha Toshiba LED package and method for manufacturing the same
JP2011249786A (ja) * 2010-04-28 2011-12-08 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び発光装置
JP2012049519A (ja) * 2010-07-26 2012-03-08 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び発光装置
JP2012049505A (ja) * 2010-07-30 2012-03-08 Mitsubishi Chemicals Corp 半導体発光装置用パッケージ及び半導体発光装置
JP2014517518A (ja) * 2011-05-19 2014-07-17 晶能光電（江西）有限公司 窒化ガリウムベースフィルムチップの生産方法および製造方法
JP2020181924A (ja) * 2019-04-26 2020-11-05 日亜化学工業株式会社 発光装置の製造方法
JP7256382B2 (ja) 2019-04-26 2023-04-12 日亜化学工業株式会社 発光装置の製造方法

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