JP2009238908A - Method of repairing semiconductor device, semiconductor device, and substrate for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To further increase mounting density of a component group on a substrate for a semiconductor device as the mounting density comes close to a limit, and to achieve further high density. <P>SOLUTION: A flexible substrate 32 is further laminated on a surface of a rigid substrate 31, and a specific area 33 is formed in part of the substrate 32 and around a large BGA 1. The specific area 33 was a section used as a space G in the past, but a plurality of small BGAs 2 are mounted on the area 33 as well. In repairing the large BGA 1, the specific area 33 is peeled off from the rigid substrate 31 along with the BGA 2, and bent to be moved away from the BGA 1, whereby the BGAs 2 are allowed to escape from hot air during repair. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which an integrated circuit and electronic components are mounted at high density on a substrate, and more particularly to a repair method for removing a highly integrated integrated circuit from the semiconductor device.

  In a semiconductor device, for example, a semiconductor device incorporated in a core system device in a communication device related field, a large number of small integrated circuits (ICs) and a large number of electronic components are surrounded around a control system large integrated circuit (LSI) including a CPU. (Chip component etc.) surrounds the structure. This is to satisfy the restriction such as equal length wiring and the requirement of high speed characteristics (for example, several tens of Gbps).

  Thus, in such a semiconductor device such as a backbone communication device, LSIs, ICs, and chip components for forming a required circuit are mounted on a substrate (motherboard or the like) at a very high density. Therefore, the circuit mounting substrate for such a semiconductor device is considerably expensive and the yield is also deteriorated.

  Therefore, when a defective product appears in a part of the various circuit component parts mounted on the circuit mounting substrate, the entire expensive circuit mounting substrate including the defective product is not discarded, Only non-defective products are removed from the substrate, and the defective substrate is regenerated. This is “repair”.

  In addition, as a well-known technique relevant to this invention, there exist the following [patent document 1]-[patent document 3].

JP 2003-258026 A JP 2002-353612 A Japanese Patent Laid-Open No. 11-186453

  By the way, the defective products as described above are likely to appear in the large integrated circuits. For example, BGA (Ball Grid Array) parts, CSP (Chip Size Package) parts, and the like correspond to the large-scale integrated circuit. This is because the internal circuit is highly integrated and has many pins. For this reason, the defect rate of the large-scale integrated circuit (BGA) may reach nearly 100 times the defect rate of the circuit mounting substrate itself.

  Under these circumstances, when a defect is found in the large integrated circuit (BGA) by the electrical performance test, only the BGA is removed from the substrate by repair, and the entire expensive substrate is removed by replacement with a new BGA. We are going to be rescued.

  In this repair, conventionally, hot air is blown directly on the defective BGA, and hot air is blown also from the back side to heat and melt the solder balls. At this time, since a large number of small BGA components (memory) arranged around the defective large BGA component are also exposed to hot air, a heat insulating member that cuts off the hot air is formed between the large BGA component and the small BGA component. Inserted between. For this reason, a predetermined gap must be provided in advance between these BGA components.

  However, the gap must be designed to always be provided around the large BGA component regardless of whether there is a repair at a later date. It has become a hindrance in realizing.

  Accordingly, an object of the present invention is to provide a semiconductor device and a substrate for the semiconductor device in which the above gap is basically unnecessary, and to provide a repair method applicable to the semiconductor device.

  A semiconductor device disclosed in this specification includes a rigid substrate, a flexible substrate provided on the surface of the rigid substrate, at least one first integrated circuit (such as a large BGA) mounted on the flexible substrate, The flexible substrate in the vicinity of the first integrated circuit has a specific area that can be peeled off from the surface of the rigid substrate, and at least one second integrated circuit (such as a small BGA) mounted on the specific area. Configured.

In addition, the repair method disclosed in this specification is:
Cutting (cutting) a part of the flexible substrate surrounding the second integrated circuit;
Peeling off the cut flexible substrate from the surface of the rigid substrate and bending the second integrated circuit away from the first integrated circuit;
In a state where the second integrated circuit is away from the first integrated circuit, hot air is applied to the first integrated circuit so as to be detached from the rigid substrate and the flexible substrate.

  Furthermore, the substrate for a semiconductor device disclosed in the present specification includes a rigid substrate made of a multilayer printed board, a front surface side flexible substrate laminated on the surface of the rigid substrate, and a back surface laminated on the back surface of the rigid substrate. A side flexible board and a part of the surface side flexible board, which is a surface side specific area that can be peeled off from the surface of the rigid board.

  According to the repair method disclosed in the present specification, at the time of repair, a small BGA component around the large BGA component can be temporarily moved away from the hot air blown to the large BGA component. Therefore, the reliability of the small BGA component does not deteriorate.

  When the small BGA part is returned to its original position after the repair, the above-described gap between the large BGA part and the large BGA part which has been conventionally required does not exist at all. This is because it is not necessary to insert the conventional heat insulating member between the BGA parts.

  Thus, it is not necessary to consider the gap in the board design, and a conventional area corresponding to the gap can be added as a component mounting area, and the above-described mounting density can be further increased.

  In order to clarify the effect of the repair technique disclosed herein, first, a conventional repair device will be described.

  FIG. 9 is a diagram showing an example of a conventional semiconductor device, and particularly shows the above-described high-density mounting type semiconductor device for a backbone communication device.

  In the figure, reference numeral 1 is the above-described first integrated circuit (for example, a large BGA component serving as a control system component) (hereinafter also simply referred to as a large BGA or BGA). Reference numeral 2 is the above-described second integrated circuit (for example, a memory system component) (hereinafter also simply referred to as a small BGA or BGA). As another electronic component, there is a chip component (for example, a resistor or a ceramic capacitor) 5.

  These BGA 1, BGA 2, and component 5 are mounted on the front surface and the back surface of the substrate 4. In this mounting, the design is performed in consideration of the formation of the large gap G and the small gap g shown in the figure, assuming that repair may be required later. The existence of these gaps G and g is an obstacle to realizing higher density mounting as described above. The reason why these G and g are required is clear from FIGS.

FIG. 10 is a diagram showing how the small BGA 2 is repaired.
FIG. 11 is a diagram showing how the large BGA 1 is repaired.

  Referring to FIG. 10, the small BGA 2 on the right side of the large BGA 1 is repaired. This repair is performed by a repair machine (11, 12, 13, 14). Cover the BGA 2 with the cover 11. Moreover, the cover 12 is put on the back side. Thereafter, the upper hot air wt and the lower hot air wb are blown into the covers 11 and 12 while being preheated from the back side of the substrate 4 by the heating plates 13 and 14, respectively.

  Here, the solder balls of BGA 2 are heated and melted, and the main body of BGA 2 can be removed from substrate 4.

  Next, a case where repair of the large BGA 1 is necessary will be described. Referring to FIG. 11, a large repair machine (21, 22, 23, 24, 25, 26) is used for this repair. The large cover 21 is put on the BGA 1 as described above. A large cover 22 is placed on the back side. Thereafter, a large amount of upper hot air Wt and a large amount of lower hot air Wb are blown into the covers 21 and 22, respectively, while preheating from the back side of the substrate 4 by the large heating plates 23 and 24.

  Here, the solder balls of BGA 1 are heated and melted, and the BGA 2 main body can be removed from the substrate 4. However, in this case, a large amount of the upper hot air Wt leaks from the lower end of the cover 21 and blows out to heat the adjacent small BGA 2.

  Therefore, in order to prevent the leaked hot air Wt from hitting the small BGA 2, heat insulating members 25 and 26 are introduced. In FIG. 9, the gaps G and g are required in the vicinity of the large BGA 1 in order to insert the side walls of the heat insulating members 25 and 26. The gaps G and g, particularly the presence of G, hinders high-density mounting of the component group (1, 2, 5, etc.) on the substrate 4. Therefore, the repair method disclosed in the present specification can eliminate the necessity of such gaps G and g on the substrate 4. Hereinafter, this repair method and the like will be described in detail.

  FIG. 1 is a diagram illustrating a semiconductor device and a repair machine disclosed in this specification. Throughout the drawings, similar components are denoted by the same reference numerals or symbols.

The semiconductor device shown in FIG.
A rigid substrate 31, a flexible substrate 32 provided on the surface of the rigid substrate 31, at least one first integrated circuit (large BGA) 1 mounted on the flexible substrate 32, and the vicinity of the first integrated circuit 1 The flexible substrate 32 includes a specific area 33 that can be peeled off from the surface of the rigid substrate 31, and at least one second integrated circuit (small BGA) 2 mounted on the specific area 33.

More preferably, the semiconductor device is
A backside flexible substrate 42 provided on the backside of the rigid substrate 31; a backside specific area 43 that can be peeled off from the backside of the rigid substrate 31 in the backside flexible substrate 42 at a position facing the first integrated circuit 1; And at least one third integrated circuit (small BGA) 3 mounted on the specific area 43.

The degree of integration of the first integrated circuit 1 is greater than the degree of integration of the second integrated circuit 2,
The degree of integration of the first integrated circuit 1 is greater than the degree of integration of the third integrated circuit 3.

  The repair method in the semiconductor device shown in FIG. 1 is as follows. FIG. 2 is a flowchart showing the repair method disclosed in this specification.

  The repair method shown in this figure is mounted on the rigid substrate 31, the flexible substrate 32 provided on the surface of the rigid substrate 31, the first integrated circuit 1 mounted on the flexible substrate 32, and the vicinity thereof. In a semiconductor device having at least one second integrated circuit 2, a repair method for heating the first integrated circuit 1 by supplying hot air and removing it from the rigid substrate 31 and the flexible substrate 32, which is described below, It has the following steps.

Step S11: A part of the flexible substrate 32 surrounding the second integrated circuit 2 is cut (see FIG. 3).
Step S12: The cut (cut) flexible substrate 32 is peeled off from the surface of the rigid substrate 31, and the second integrated circuit 2 is bent away from the first integrated circuit 1 (see FIG. 3).
Step S13: Hot air Wt (FIG. 1) is given to the first integrated circuit 1 with the second integrated circuit 2 kept away from the first integrated circuit 1. The solder balls of the integrated circuit 1 are heated and melted.

In this case, does it further include step S21 for processing the perforation in advance at the periphery of the area of the flexible substrate 32 to be cut (cut) (see FIG. 4)?
Alternatively, in step S11, a cutting means (such as a cutter) is used to cut the periphery of the area of the flexible substrate 32 to be cut.

Furthermore, a back surface side flexible substrate 42 provided on the back surface of the rigid substrate 31 and at least one third integrated circuit 3 mounted on the back surface side flexible substrate 42 at a position facing the first integrated circuit 1. If you have more
Step S31: A part of the back-side flexible substrate 42 surrounding the periphery of the third integrated circuit 3 is cut (cut).
Step S32: The cut back-side flexible substrate 42 is peeled off from the back surface of the rigid substrate 31, and the third integrated circuit 3 is bent so as to be away from the facing position of the first integrated circuit 1 (position where the hot air Wb hits). .
Step S33: With the third integrated circuit 3 kept away from the facing position of the first integrated circuit 1, the back-side hot air Wb is given to the facing position.

In this case, as in step S21 or S22, further includes step S41 for processing perforation in advance in the periphery of the region of the back side flexible substrate 42 to be cut,
Alternatively, in step S31, a cut is made by the cutting means in the periphery of the area of the back side flexible substrate 42 to be cut.

  The steps S11 and S12 and step S21 (perforation processing) in the flowchart will be described in more detail. First, FIG. 3 shows the integrated circuit 1 and the substrates 31, 32, and 42 (A) to be repaired, a state in which some of the substrates 32 and 42 are bent (B), and the state (B) viewed from above (C). FIG. In this figure, only the integrated circuit (large BGA) 1 to be repaired is shown as a mounting component on the substrate, and other components are not shown.

  A cut S1 is made between the specific area 33 on the left and right of the BGA 1 and the BGA 1. This S1 desirably has a width larger than the thickness of the substrate 32.

  Further, in the bent portion of the specific area 33, a coverlay removal portion S2 constituting the flexible substrate 32 is formed. The removed portion S2 makes it easy to bend a base film (for example, a polyimide film) constituting the substrate 32. Such processing (S1, S2) is similarly performed on the back side of the substrate 31.

  Thus, the state after peeling and bending of the specific areas 33 and 43 is shown in FIG. The top view is shown in FIG. This figure (C) shows an example in which the specific area 33 exists not only on one two sides of the large-sized BGA 1 (as in the same figure (A) and (B)) but also on the other two sides. ing. In addition, in this figure (C), the dotted line drawn in parallel with each of those 4 sides represents the boundary of the said bending part.

  Next, with reference to FIG. 4, step S21 of the flowchart (FIG. 2) will be described in detail. FIG. 4 is a diagram showing the perforation processing in step S21 (and S41) of FIG.

  In this figure, reference numeral 34 represents the entire perforation processing (perforation processing portion), and a small piece portion 32 ′ of the flexible substrate 32 remaining in a stepping stone shape on the exposed rigid substrate 31 forms a perforation. The specific area 33 can be easily peeled off by this perforation. Note that dotted lines drawn in parallel with the four sides of the BGA 1 correspond to the bent portion (S2) of the substrate 32 shown in FIG.

  As a supplement to the flowchart shown in FIG. 2, a repair method unique to the present invention will be described. FIG. 5 is a diagram illustrating a repair method for the small BGA 2. That is, the second integrated circuit (small BGA) 2 can be easily heated and removed from the flexible substrate 32 side in a state where the cut flexible substrate 32 is peeled off and bent (FIG. 1). This heating is performed by the soldering iron 51, for example. By this heating, the solder balls of the small BGA 2 are heated and melted, and repair is performed.

  Thus, by adopting the repair method disclosed in the present specification, it is possible to realize a circuit mounting board, for example, for a core communication device, which has a higher density as described above. FIG. 6 is a diagram showing an example in which higher density can be achieved by the present invention.

  Conventionally, no parts could be placed in the vicinity of the large BGA 1 and in the vicinity of the opposite position in consideration of repair (see FIG. 9). According to the present invention, as shown in FIG. , 43 can be further packed with parts 2, 3 and 5, and a higher density can be achieved.

  If the present invention is further developed, it is possible to further increase the density as required. FIG. 7 is a diagram showing an example of mounting that can achieve higher density than the configuration of FIG. In this figure, chip parts 55 and 65 are further packed. These chip components 55 and 65 can sufficiently withstand the hot air when the component 1 is repaired.

  That is, the specific area 33 is peeled off from the surface of the rigid substrate 31, and the second integrated circuit (small BGA) 2 is bent so as to be away from the first integrated circuit (large BGA) 2. At least one electronic component (chip component) 55 to be mounted on can be added.

  Further, the back surface side specific area 43 is peeled off from the back surface of the rigid substrate 31, and the back surface of the rigid substrate 31 after being bent so that the third integrated circuit (small BGA) 3 is kept away from the facing position of the first integrated circuit 1. At least one electronic component (chip component) 65 mounted thereon can be added.

  Lastly, a semiconductor device substrate disclosed in this specification will be described. FIG. 8 is a view showing the time when the manufacture of the substrate according to the present invention is started (A), the time when the substrates are joined together (B), and the time when the through holes are formed (C).

  First, in FIG. 8A, the rigid board 31 made of a multilayer printed board is sandwiched from above and below by the flexible board 32 and the back side flexible board 42. At this time, adhesives 71 and 72 are filled between the substrates.

  These substrates are combined or thermocompression bonded to form a bonded substrate board (32-31-42). This is shown in FIG.

  Further, a through hole 73 is formed to complete the substrate. This is shown in FIG. Referring to FIG. 8C, a conductive pad 74 is formed at the open end of each through hole 73. Conductive pads 76 are also formed at the open ends of the vias 75. 77 is a land.

  Here, reference numeral 1 represents a position where the large BGA 1 is to be mounted, and a perforated portion 34 (FIG. 4) is formed therearound. Reference numeral 34 'denotes a processed portion on the back side.

  A region adjacent to the perforated portion 34 (34 ') is a specific area 33 (43), and these portions are bent when the component 1 is repaired. A small BGA2 (3) is mounted on these areas. Thus, a large-sized substrate for a semiconductor device such as 5 cm × 5 cm is completed. Incidentally, the thickness of the rigid substrate 31 is about several mm.

To summarize the above,
A substrate for a semiconductor device according to the present invention comprises:
A rigid board 31 made of a multilayer printed board, a front side flexible board 32 laminated on the surface of the rigid board 31, a back side flexible board 42 laminated on the back side of the rigid board 31, and a front side flexible board A surface side specific area 33 that is a part of the substrate 32 and can be peeled off from the surface of the rigid substrate 31.

  Further, it further includes a back side specific area 43 which is a part of the back side flexible substrate 42 and can be peeled off from the back side of the rigid substrate 31.

  Here, the surface-side flexible substrate 32 is made of a material that can be bent after the peeling, for example, polyimide or polyester.

  Similarly, the back-side flexible substrate 42 is also a material that can be bent after the above-described peeling.

  Then, in an area other than the front surface side specific area 33 and the back surface side specific area 43, at least one through hole 73 is formed so as to penetrate the front surface side flexible substrate 32, the rigid substrate 31, and the back surface side flexible substrate 42. The device substrate is completed.

  With respect to each of the above embodiments, the following supplementary notes are disclosed.

(Appendix 1)
Semiconductor device having a rigid substrate, a flexible substrate provided on the surface of the rigid substrate, a first integrated circuit mounted on the flexible substrate, and at least one second integrated circuit mounted in the vicinity thereof The repair method of
Cutting a portion of the flexible substrate surrounding the periphery of the second integrated circuit;
Peeling the cut flexible substrate from the surface of the rigid substrate, and bending the second integrated circuit away from the first integrated circuit;
Heating the first integrated circuit with the second integrated circuit away from the first integrated circuit;
A repair method.

(Appendix 2)
The repair method according to appendix 1, further comprising a step of processing perforations in advance in a periphery of the area of the flexible substrate to be cut.

(Appendix 3)
The repair method according to appendix 1, wherein, in the cutting step, a cut is made at a periphery of the region of the flexible substrate to be cut.

(Appendix 4)
The semiconductor device further includes a back surface side flexible substrate provided on the back surface of the rigid substrate, and at least one third integrated circuit mounted on the back surface side flexible substrate at a position facing the first integrated circuit. Have
Cutting a portion of the back side flexible substrate surrounding the periphery of the third integrated circuit;
Peeling the cut back side flexible substrate from the back side of the rigid substrate and bending the third integrated circuit away from the opposing position of the first integrated circuit;
Heating the facing position in a state where the third integrated circuit is away from the facing position of the first integrated circuit;
The repair method according to Supplementary Note 1, wherein

(Appendix 5)
The repair method according to appendix 4, further comprising a step of processing perforations in advance in the periphery of the region of the back side flexible substrate to be cut.

(Appendix 6)
The repair method according to appendix 4, wherein, in the cutting step, a cut is made at the periphery of the region of the back side flexible substrate to be cut.

(Appendix 7)
The repair method according to appendix 1, further comprising a step of heating the second integrated circuit from the flexible substrate side in a state where the cut flexible substrate is peeled off and bent.

(Appendix 8)
Rigid board,
A flexible substrate provided on the surface of the rigid substrate;
At least one first integrated circuit mounted on the flexible substrate;
A specific area peelable from the surface of the rigid substrate in the flexible substrate in the vicinity of the first integrated circuit;
At least one second integrated circuit mounted on the specific area;
A semiconductor device.

(Appendix 9)
A back side flexible board provided on the back side of the rigid board;
A back side specific area that can be peeled off from the back side of the rigid substrate in the back side flexible substrate at a position opposite to the first integrated circuit;
At least one third integrated circuit mounted on the back side specific area;
Item 8. The semiconductor device according to appendix 8.

(Appendix 10)
The specific area is peeled off from the surface of the rigid substrate, and has at least one electronic component mounted on the surface of the rigid substrate after being bent so as to keep the second integrated circuit away from the first integrated circuit. The semiconductor device according to appendix 8.

(Appendix 11)
At least one mounted on the back surface of the rigid substrate after being bent so that the specific area on the back surface side is peeled off from the back surface of the rigid substrate and the third integrated circuit is moved away from the facing position of the first integrated circuit. Item 9. The semiconductor device according to appendix 9, having one electronic component.

(Appendix 12)
The semiconductor device according to appendix 8, wherein an integration degree of the first integrated circuit is larger than an integration degree of the second integrated circuit.

(Appendix 13)
The semiconductor device according to appendix 9, wherein an integration degree of the first integrated circuit is larger than an integration degree of the third integrated circuit.

(Appendix 14)
A rigid board made of a multilayer printed circuit board;
A surface-side flexible substrate laminated on the surface of the rigid substrate;
A back surface side flexible substrate laminated on the back surface of the rigid substrate;
A part of the surface side flexible substrate, a surface side specific area that can be peeled off from the surface of the rigid substrate,
A substrate for a semiconductor device.

(Appendix 15)
15. The semiconductor device substrate according to appendix 14, further comprising a back side specific area that is a part of the back side flexible substrate and is peelable from the back side of the rigid substrate.

(Appendix 16)
15. The semiconductor device substrate according to appendix 14, wherein the front-side flexible substrate is a material that can be bent after the peeling.

(Appendix 17)
The semiconductor device substrate according to appendix 15, wherein the back-side flexible substrate is a material that can be bent after the peeling.

(Appendix 18)
Supplementary note 15 formed by forming at least one through hole penetrating the front surface side flexible substrate, the rigid substrate, and the rear surface side flexible substrate in an area other than the front surface side specific area and the back surface side specific area. The board | substrate for semiconductor devices of description.

It is a figure which shows the semiconductor device and repair machine which are disclosed by this specification. It is a flowchart showing the repair method disclosed by this specification. The figure which shows the state (C) which looked at the integrated circuit 1 and board | substrates 31,32,42 (A) which should be repaired, the state (B) which bent some substrates 32,42, and the state (B) from the upper side. is there. It is a figure showing the perforation process (step S21, S41) performed before reaching (C) of FIG. It is a figure showing another repair method disclosed by this specification. It is a figure which shows an example which can achieve further high density by this invention. It is a figure which shows the example of mounting which can attain higher density than the structure of FIG. It is a figure which shows the time of the start of manufacture of the board | substrate by this invention (A), the time of board | substrate combination (B), and the time of through-hole formation (C). It is a figure which shows an example of the conventional semiconductor device. It is a figure which shows a mode that small BGA2 is repaired. It is a figure which shows a mode that large sized BGA1 is repaired.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st integrated circuit 2 2nd integrated circuit 3 3rd integrated circuit 4 Board | substrate 5 Chip component 31 Rigid board | substrate 32 Flexible board 33 Specific area 34 Perforation process part 42 Back surface side flexible substrate 43 Back surface side specific area 73 Through hole

Claims (7)

Semiconductor device having a rigid substrate, a flexible substrate provided on the surface of the rigid substrate, a first integrated circuit mounted on the flexible substrate, and at least one second integrated circuit mounted in the vicinity thereof The repair method of
Cutting a portion of the flexible substrate surrounding the periphery of the second integrated circuit;
Peeling the cut flexible substrate from the surface of the rigid substrate, and bending the second integrated circuit away from the first integrated circuit;
Heating the first integrated circuit with the second integrated circuit away from the first integrated circuit;
A repair method.   The repair method according to claim 1, further comprising the step of processing perforations in advance in a periphery of the region of the flexible substrate to be cut. The semiconductor device further includes a back surface side flexible substrate provided on the back surface of the rigid substrate and at least one third integrated circuit mounted on the back surface side flexible substrate at a position facing the first integrated circuit. Have
Cutting a portion of the back side flexible substrate surrounding the periphery of the third integrated circuit;
Peeling the cut back side flexible substrate from the back side of the rigid substrate, and bending the third integrated circuit away from the facing position of the first integrated circuit;
Heating the facing position in a state where the third integrated circuit is away from the facing position of the first integrated circuit;
The repair method according to claim 1, comprising: Rigid board,
A flexible substrate provided on the surface of the rigid substrate;
At least one first integrated circuit mounted on the flexible substrate;
A specific area peelable from the surface of the rigid substrate in the flexible substrate in the vicinity of the first integrated circuit;
At least one second integrated circuit mounted on the specific area;
A semiconductor device. A back side flexible board provided on the back side of the rigid board;
A back side specific area that can be peeled off from the back side of the rigid substrate in the back side flexible substrate at a position opposite to the first integrated circuit;
At least one third integrated circuit mounted on the back side specific area;
The semiconductor device according to claim 4, comprising:   The specific area is peeled off from the surface of the rigid substrate, and has at least one electronic component mounted on the surface of the rigid substrate after being bent so as to keep the second integrated circuit away from the first integrated circuit. The semiconductor device according to claim 4. A rigid board made of a multilayer printed circuit board;
A surface-side flexible substrate laminated on the surface of the rigid substrate;
A back surface side flexible substrate laminated on the back surface of the rigid substrate;
A part of the surface side flexible substrate, a surface side specific area that can be peeled off from the surface of the rigid substrate,
A substrate for a semiconductor device.

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