JP2009238848A - Light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device having a novel light-emitting element capable of reducing speckle noise and having high output. <P>SOLUTION: The light-emitting device 1000 includes the light-emitting element 100, and at least one optical member 158 provided on the side of the light-emitting element, wherein the light-emitting element has a clad layer, an active layer and another clad layer, at least one part of the active layer configures a plurality of gain regions 180, 182, the gain regions are provided in a direction inclined to a perpendicular of one side face from the one side face of the active layer to the other side face when viewed on a plane, the plurality of gain regions form at least one gain region pair, the first gain region of the gain region pair is provided in one direction A, a second gain region of the other side of the gain region pair is provided in another direction B, and the optical member causes light emitted from an end face 172 of the first gain region and an end face 176 of the second gain region in the same side face side of the active layer to be refracted and emitted as light propagating in the same direction. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a light emitting device.

In recent years, a laser device having high luminance and excellent color reproducibility is expected as a light emitting device for a light source of a display device such as a projector or a display. However, speckle noise generated by irregularly reflected light on the screen surface may be a problem. For example, Japanese Patent Application Laid-Open Publication No. 2004-228620 proposes a method for reducing speckle noise by changing the speckle pattern by swinging the screen.
Japanese Patent Laid-Open No. 11-64789

  However, in the method disclosed in Patent Document 1, the screen is limited, a member such as a motor for moving the screen is required, and noise is generated from the motor or the like. Problems may occur.

  In order to reduce speckle noise, it is also conceivable to use a general LED (Light Emitting Diode) as a light emitting device for a light source. However, there are cases where a sufficient light output cannot be obtained with an LED.

  One object of the present invention is to provide a light-emitting device having a novel light-emitting element that can reduce speckle noise and has high output.

The light emitting device according to the present invention is
A light emitting element;
At least one optical member provided on a side of the light emitting element;
Including
The light emitting element is
A cladding layer;
An active layer formed above the cladding layer;
Another cladding layer formed above the active layer;
Have
At least a part of the active layer constitutes a plurality of gain regions,
The gain region is provided in a direction inclined with respect to a normal to the one side surface from one side surface to the other side surface of the active layer in a plan view.
The plurality of gain regions form at least one gain region pair;
One first gain region of the pair of gain regions is provided toward one direction;
The other second gain region of the pair of gain regions is provided in another direction different from the one direction;
The optical member refracts light emitted from the end face of the first gain region and the end face of the second gain region on the same side surface side of the active layer, and emits the light as light traveling in the same direction.

  In the light emitting element included in the light emitting device according to the present invention, as will be described later, laser oscillation of light generated in the gain region can be suppressed or prevented. Therefore, speckle noise can be reduced. Furthermore, in the light emitting device according to the present invention, the light generated in the gain region can travel while receiving a gain in the gain region and be emitted to the outside. Therefore, it is possible to obtain a higher output than conventional general LEDs. As described above, according to the present invention, it is possible to provide a light-emitting device having a novel light-emitting element that can reduce speckle noise and has high output.

  In the description of the present invention, the word “upper” is referred to as, for example, another specific member (hereinafter referred to as “B member”) formed “above” a “specific member (hereinafter referred to as“ A member ”). ) "Etc. In the description according to the present invention, in this case, the B member is formed directly on the A member, and the B member is formed on the A member via another member. The word “above” is used as a case where the case is included.

In the light emitting device according to the present invention,
The light incident surface of the optical member can be inclined with respect to the direction in which the incident light travels and its perpendicular, as viewed in a plan view.

In the light emitting device according to the present invention,
The light exit surface of the optical member can be inclined with respect to the direction in which the emitted light travels and its perpendicular, as viewed in a plan view.

In the light emitting device according to the present invention,
The traveling direction of the light emitted from the optical member may be a perpendicular direction of the side surface of the active layer from which the light incident on the optical member is emitted.

In the light emitting device according to the present invention,
The light incident surface of the optical member includes a first incident surface and a second incident surface,
The first incident surface is inclined to one side with respect to a direction parallel to the side surface of the active layer from which light incident on the optical member is emitted in plan view.
The second incident surface is inclined to the other side with respect to a direction parallel to the side surface of the active layer from which light incident on the optical member is emitted in plan view.
The light emission surface of the optical member may be parallel to the side surface of the active layer from which light incident on the optical member is emitted in plan view.

In the light emitting device according to the present invention,
The light exit surface of the optical member comprises a first exit surface and a second exit surface,
The first emission surface is inclined to one side with respect to a direction parallel to a side surface of the active layer from which light incident on the optical member is emitted in plan view.
The second emission surface is inclined to the other side with respect to a direction parallel to the side surface of the active layer from which light incident on the optical member is emitted in plan view.
A light incident surface of the optical member may be parallel to a side surface of the active layer from which light incident on the optical member is emitted in plan view.

In the light emitting device according to the present invention,
At least a part of the end face on the one side surface side of the first gain region and at least a part of the end surface on the one side surface side of the second gain region are the same side surface side of the active layer Are overlapping,
In the wavelength band of light generated in the plurality of gain regions, the reflectance of the one side surface can be higher than the reflectance of the other side surface.

In the light emitting device according to the present invention,
In the gain region, when viewed in plan from the one side surface side, the end surface on the one side surface side and the end surface on the other side surface side may not overlap.

In the light emitting device according to the present invention,
The light emitting element is
An electrode electrically connected to the cladding layer;
Another electrode electrically connected to the other cladding layer;
Can have.

  In the description according to the present invention, the phrase “electrically connected” is used as, for example, another specific member (hereinafter “electrically connected” to “specific member (hereinafter referred to as“ C member ”)”. It is used as "D member"). In the description according to the present invention, in the case of this example, the case where the C member and the D member are directly connected and electrically connected, and the C member and the D member are the other members. The term “electrically connected” is used as a case where the case where the terminals are electrically connected to each other is included.

In the light emitting device according to the present invention,
A plurality of pairs of the gain regions are arranged,
The optical member refracts light emitted from an end surface of the first gain region and an end surface of the second gain region of a plurality of pairs of the gain regions on the same side surface side of the active layer so that they are all in the same direction. It can be emitted as traveling light.

In the light emitting device according to the present invention,
The optical member may be in contact with the light emitting element.

In the light emitting device according to the present invention,
The optical member may be transparent to the wavelength of light emitted from the light emitting element.

In the light emitting device according to the present invention,
At least one of the light incident area and the light emitting area of the optical member may be covered with a reflection reducing member.

  Preferred embodiments of the present invention will be described below with reference to the drawings.

1. 1. First embodiment 1.1. First, the light emitting device 1000 according to the first embodiment will be described.

  1 is a plan view schematically showing the light emitting device 1000, and FIG. 2 is a cross-sectional view taken along the line II-II in FIG.

  As shown in FIGS. 1 and 2, the light emitting device 1000 includes a light emitting element 100 and an optical member 158. The light emitting device 1000 can further include, for example, a support member 140 and a connection member 143. Here, a case where the light emitting element 100 is an InGaAlP-based (red) semiconductor light emitting element will be described.

  The light emitting element 100 is mounted on the support member 140. As shown in FIGS. 1 and 2, the light emitting device 100 includes a cladding layer (hereinafter referred to as “first cladding layer”) 110, an active layer 108 formed thereon, and a cladding layer ( (Hereinafter referred to as “second cladding layer”) 106. The light emitting element 100 can further include, for example, a substrate 102, a buffer layer 104, a contact layer 112, a first electrode 122, and a second electrode 120.

  As the substrate 102, for example, a first conductivity type (for example, n-type) GaAs substrate or the like can be used.

  The buffer layer 104 can be formed under the substrate 102, for example, as shown in FIG. The buffer layer 104 can improve the crystallinity of a layer formed above the buffer layer 104, for example, in an epitaxial growth step described later (see FIG. 4). As the buffer layer 104, for example, a first conductivity type (n-type) GaAs layer, InGaP layer, or the like having better crystallinity (for example, lower defect density) than the substrate 102 can be used.

  The second cladding layer 106 is formed under the buffer layer 104. The second cladding layer 106 is made of, for example, a first conductivity type semiconductor. As the second cladding layer 106, for example, an n-type AlGaP layer can be used.

  The active layer 108 is formed under the second cladding layer 106. For example, the active layer 108 is provided on the support member 140 side of the light emitting element 100. In other words, the active layer 108 is provided, for example, on the light emitting element 100 below the middle in the thickness direction (on the side opposite to the substrate 102 side). The active layer 108 has, for example, a multiple quantum well (MQW) structure in which three quantum well structures each composed of an InGaP well layer and an InGaAlP barrier layer are stacked.

  A part of the active layer 108 constitutes a plurality of gain regions. Each of the plurality of gain regions forms a pair. For example, in the illustrated example, the active layer 108 has two gain regions (a first gain region 180 and a second gain region 182), and these constitute a gain region pair 183.

The gain regions 180 and 182 can generate light, and this light can receive gain within the gain regions 180 and 182. The shape of the active layer 108 is, for example, a rectangular parallelepiped (including a cube). The active layer 108 has two side surfaces 107 and 109 as shown in FIG. The two side surfaces 107 and 109 face each other, for example, and are parallel, for example. In the wavelength band of light generated in the gain regions 180 and 182, the reflectance of the side surface (hereinafter referred to as “first side surface”) 107 is higher than, for example, the reflectance of the side surface (hereinafter referred to as “second side surface”) 109. For example, as shown in FIG. 1, a high reflectance can be obtained by covering the first side surface 107 with a reflecting portion 130. As the reflection unit 130, for example, a dielectric multilayer mirror in which four pairs are stacked in the order of the Al ₂ O ₃ layer and the TiO ₂ layer from the first side surface 107 side can be used. The reflectance of the first side surface 107 is desirably 100% or close thereto. On the other hand, the reflectance of the second side surface 109 is desirably 0% or close thereto. For example, a low reflectance can be obtained by covering the second side surface 109 with a reflection reducing unit (not shown). As the reflection reducing portion, for example, an Al ₂ O ₃ single layer can be used.

Each of the gain regions 180 and 182 is provided from the first side surface 107 to the second side surface 109 in a direction inclined with respect to the normal line P of the first side surface 107 in plan view (see FIG. 1). Yes. Thereby, the laser oscillation of the light generated in the gain regions 180 and 182 can be suppressed or prevented. The first gain region 180 and the second gain region 182 are provided in different directions. In the illustrated example, the first gain region 180 is inclined to one side with respect to the perpendicular P, (hereinafter also referred to as "first direction") direction having a tilt angle theta _A provided towards the A Yes. The second gain region 182 is inclined to the other side (opposite side of the one side) with respect to the perpendicular P, and has a direction having an inclination of an angle θ _B (hereinafter also referred to as “second direction”) B It is provided towards. Note that the case where the first gain region 180 is provided in a certain direction means that the direction is the center of the first end surface 170 on the first side surface 107 side of the first gain region 180 when viewed in plan. And the direction connecting the center of the second end surface 172 on the second side surface 109 side. The same applies to the other gain regions. And the tilt angle theta _A of the first gain region 180, the tilt angle theta _B of the second gain region 182 is in the illustrated example is the same or may be different.

  In the illustrated example, the first end surface 170 and the third end surface 174 on the first side surface 107 side of the second gain region 182 completely overlap with each other on the overlapping surface 178. For example, although not illustrated, the first end surface 170 and the third end surface 174 may partially overlap. The planar shape of the first gain region 180 and the planar shape of the second gain region 182 are line symmetric with respect to the normal line P in the first end surface 170 or the third end surface 174, for example. The planar shape of the first gain region 180 and the planar shape of the second gain region 182 are line symmetric with respect to the vertical bisector P of the overlapping surface 178, for example. The planar shape of each of the first gain region 180 and the second gain region 182 is, for example, a parallelogram as shown in FIG.

  FIG. 3 is a plan view of the active layer 108 in the example of FIGS. 1 and 2 as seen from the first side face 107 side. As shown in FIG. 3, in each of the first gain region 180 and the second gain region 182, the end surfaces 170 and 174 on the first side surface 107 side and the end surfaces 172 and 176 on the second side surface 109 side do not overlap. . As a result, light generated in the gain regions 180 and 182 can be prevented from being directly subjected to multiple reflection between the end surfaces 170 and 174 on the first side surface 107 side and the end surfaces 172 and 176 on the second side surface 109 side. As a result, since a direct resonator cannot be configured, laser oscillation of light generated in the gain regions 180 and 182 can be more reliably suppressed or prevented. Therefore, the light emitting element 100 can emit light that is not laser light. In this case, as shown in FIG. 3, for example, in the first gain region 180, the shift width x between the first end surface 170 and the second end surface 172 may be a positive value. The same applies to the other gain regions.

  In the illustrated example, as shown in FIG. 1, the widths of the end surfaces 172 and 176 on the second side surface 109 side of each of the first gain region 180 and the second gain region 182 are equal to the end surface 170 on the first side surface 107 side. , 174, but may be different.

  The first cladding layer 110 is formed under the active layer 108. The first cladding layer 110 is made of, for example, a second conductivity type (eg, p-type) semiconductor. As the first cladding layer 110, for example, a p-type AlGaP layer can be used.

  For example, the p-type first cladding layer 110, the active layer 108 not doped with impurities, and the n-type second cladding layer 106 constitute a pin diode. Each of the first cladding layer 110 and the second cladding layer 106 is a layer having a larger forbidden band width and a smaller refractive index than the active layer 108. The active layer 108 has a function of amplifying light. The first cladding layer 110 and the second cladding layer 106 have a function of confining injected carriers (electrons and holes) and light with the active layer 108 interposed therebetween.

  The contact layer 112 can be formed under the first cladding layer 110, for example, as shown in FIG. As the contact layer 112, a layer in ohmic contact with the first electrode 122 can be used. The contact layer 112 is made of, for example, a second conductivity type semiconductor. As the contact layer 112, for example, a p-type GaAs layer can be used.

  The first electrode 122 is formed under the contact layer 112. The first electrode 122 is electrically connected to the first cladding layer 110 via the contact layer 112. The first electrode 122 is one electrode for driving the light emitting element 100. As the first electrode 122, for example, a layer in which a Cr layer, an AuZn layer, and an Au layer are stacked in this order from the contact layer 112 side can be used. The upper surface of the first electrode 122 has the same planar shape as the gain regions 180 and 182. In the illustrated example, the current path between the electrodes 122 and 120 is determined by the planar shape of the contact surface between the first electrode 122 and the contact layer 112, and as a result, the planar shape of the gain regions 180 and 182 is determined. Can do. Although not shown, for example, the contact surface between the second electrode 120 and the substrate 102 may have the same planar shape as the gain regions 180 and 182.

  The second electrode 120 is formed on the entire surface of the substrate 102. The second electrode 120 can be in contact with a layer that is in ohmic contact with the second electrode 120 (the substrate 102 in the illustrated example). The second electrode 120 is electrically connected to the second cladding layer 106 through the substrate 102 and the buffer layer 104. The second electrode 120 is the other electrode for driving the light emitting element 100. As the second electrode 120, for example, a layer in which a Cr layer, an AuGe layer, a Ni layer, and an Au layer are stacked in this order from the substrate 102 side can be used. In addition, a second contact layer (not shown) is provided between the second cladding layer 106 and the buffer layer 104, and the second cladding layer 106 side of the second contact layer is exposed by dry etching or the like. The electrode 120 can also be provided under the second contact layer. Thereby, a single-sided electrode structure can be obtained. For example, an n-type GaAs layer can be used as the second contact layer. Although not shown, the substrate 102 and a member provided thereunder can be separated using, for example, an epitaxial lift-off (ELO) method, a laser lift-off method, or the like. That is, the light emitting element 100 may not have the substrate 102. In this case, for example, the second electrode 120 can be formed directly on the buffer layer 104.

In the light emitting device 100, when a forward bias voltage of a pin diode is applied between the first electrode 122 and the second electrode 120, recombination of electrons and holes occurs in the gain regions 180 and 182 of the active layer 108. This recombination causes light emission. With this generated light as a starting point, stimulated emission occurs in a chain, and the light intensity is amplified in the gain regions 180 and 182. For example, part of the light generated in the second gain region 182 is reflected by the overlapping surface 178 and is emitted from the second end surface 172 on the second side surface 109 side of the first gain region 180 as the first emitted light L1. In the meantime, the light intensity is amplified. Similarly, part of the light generated in the first gain region 180 is reflected by the overlapping surface 178 and emitted from the fourth end surface 176 as the second emitted light L2, but the light intensity is amplified during that time. Note that some of the light generated in the first gain region 180 is directly emitted from the second end face 172 as the first emitted light L1. Similarly, some of the light generated in the second gain region 182 is emitted directly from the fourth end face 176 as the second emitted light L2. The first emitted light L1 can be emitted in a direction inclined more than the inclination of the first gain region 180 with respect to the normal P of the first side surface 107, for example, due to light refraction. The tilt angle θ _A of the first gain region 180 with respect to the perpendicular P of the first side surface 107, the tilt angle θ ₁ of the first emitted light L ₁ , and the refractive index n _A of the active layer 108 can satisfy the following formula, for example. .

n _A sin θ _A = sin θ ₁
The above equation is derived using Snell's law when the first emitted light L1 is emitted from the active layer 108 into the air. The above equation holds true for other gain regions as well.

  As shown in FIGS. 1 and 2, the optical member 158 is provided on the support member 140 and on the side of the light emitting element 100. The optical member 158 includes first emission light emitted from the end surface 172 of the first gain region 180 and the end surface 176 of the second gain region 182 on the same side surface side (the second side surface 109 side in the illustrated example) of the active layer 108. L1 and the second emitted light L2 enter. The light incident surface of the optical member 158 can be composed of a first incident surface 162 and a second incident surface 164 as shown in FIG. For example, as shown in FIG. 1, the first incident surface 162 can be inclined with respect to the traveling direction of the first outgoing light L <b> 1 and its perpendicular line Q. Thereby, the 1st emitted light L1 is refracted by the optical member 158, and can advance the inside of the optical member 158 as the 1st refractive light L3. Similarly, the second incident surface 164 can be inclined with respect to the traveling direction of the second outgoing light L2 and the perpendicular R thereof, for example. Accordingly, the second emitted light L2 is refracted by the optical member 158, and can travel through the optical member 158 as the second refracted light L4. Due to the inclination of the first incident surface 162 and the second incident surface 164, for example, when seen in a plan view (see FIG. 1), the intersection S thereof protrudes toward the light emitting element 100. For example, as shown in FIG. 1, the first incident surface 162 and the second incident surface 164 may be axisymmetric with respect to the perpendicular bisector P of the overlapping surface 178.

As shown in FIG. 1, the first incident surface 162 is inclined to one side with respect to a direction parallel to the second side surface 109 of the active layer 108 (Y direction in FIG. 1). The inclination angle (acute angle side) of the first incident surface 162 with respect to the direction parallel to the second side surface 109 is θ ₃ . The tilt angle θ ₃ , the refractive index n of the optical member 158, and the tilt angle θ ₁ of the first emitted light L 1 with respect to the perpendicular direction (X direction in FIG. 1) of the second side surface 109 are expressed by, for example, the following formula (1): Can be satisfied.

sin (θ ₁ + θ ₃ ) = n sin θ ₃ (1)
Thereby, the direction in which the first refracted light L3 travels can be the normal direction of the second side surface 109. In addition, said Formula (1) is derived | led-out using Snell's law in case the 1st emitted light L1 injects into the optical member 158 from the air. Further, from the above equation (1), the inclination angle θ ₃ is, for example,
θ ₃ = tan ⁻¹ {sin θ ₁ / (n−cos θ ₁ )}
It can be expressed as

Further, as shown in FIG. 1, the second incident surface 164 is inclined to the other side with respect to the direction parallel to the second side surface 109 of the active layer 108. The inclination angle (acute angle side) of the second incident surface 164 with respect to the direction parallel to the second side surface 109 is θ ₄ . The inclination angle θ ₄ is similar to the inclination angle θ ₃ of the first incident surface 162 described above, for example,
θ ₄ = tan ⁻¹ {sin θ ₂ / (n−cos θ ₂ )}
It can be expressed as Thereby, the direction in which the second refracted light L4 travels can be the normal direction of the second side surface 109. Θ ₂ is the inclination angle of the second emitted light L 2 with respect to the normal direction of the second side surface 109. The inclination angle theta ₁ of the first outgoing light L1, the inclination angle theta ₂ of the second outgoing light L2 is, for example, the same. In addition, the inclination angle θ ₃ of the first incident surface 162 and the inclination angle θ ₄ of the second incident surface 164 are the same, for example.

  As described above, for example, the traveling directions of the first refracted light L3 and the second refracted light L4 can be aligned with the perpendicular direction of the second side surface 109 of the active layer 108. That is, the traveling direction of the first refracted light L3 and the traveling direction of the second refracted light L4 are, for example, the same. In the light emitting device 1000 according to the present embodiment, for example, the first gain region 180 is provided to be inclined to one side with respect to the perpendicular P, and the second gain region 182 is provided to be inclined to the other side. For this reason, the first outgoing light L1 advances in a direction inclined to one side with respect to the perpendicular P, and the second outgoing light L2 advances in a direction inclined to the other side. The first incident surface 162 is inclined to one side with respect to the direction parallel to the second side surface 109 (the Y direction in FIG. 1) according to the traveling direction of the emitted lights L1 and L2. 164 is inclined to the other side. Accordingly, the traveling directions of the first refracted light L3 and the second refracted light L4 can be aligned with the perpendicular direction (X direction in FIG. 1) of the second side surface 109 of the active layer 108.

  The first refracted light L3 that has traveled through the optical member 158 can be emitted from the optical member 158 as the third emitted light L5. Similarly, the second refracted light L4 that has traveled through the optical member 158 can be emitted from the optical member 158 as the fourth emitted light L6. For example, as shown in FIG. 1, the emission surfaces 169 of the third emitted light L5 and the fourth emitted light L6 in the optical member 158 are parallel to the second side surface 109 of the active layer 108. Therefore, as described above, the first refracted light L3 and the second refracted light L4 that are aligned in the direction perpendicular to the second side surface 109 of the active layer 108 may be emitted from the optical member 158 in the same direction, for example. it can. In other words, the traveling directions of the third emitted light L5 and the fourth emitted light L6 can be aligned with the perpendicular direction of the second side surface 109 of the active layer 108, for example.

  As described above, the optical member 158 refracts the first emitted light L1 and the second emitted light L2 traveling in different directions and emits them as the third emitted light L5 and the fourth emitted light L6 traveling in the same direction. Can do.

  The optical member 158 can be transparent to the wavelengths of the light L1 and L2 emitted from the light emitting element 100. Thereby, at least a part of the first outgoing light L1 can pass through the optical member 158, and at least a part of the second outgoing light L2 can pass through the optical member 158. The optical member 158 can be made of, for example, glass, quartz, plastic, or quartz. These can be appropriately selected according to the wavelengths of the outgoing lights L1 and L2. Thereby, the absorption loss of light can be reduced.

  The support member 140 can support the light emitting element 100 and the optical member 158, for example. As the support member 140, for example, a plate-shaped (cuboid) member can be used. The support member 140 can also indirectly support the light emitting element 100 and the optical member 158 via, for example, another support member (submount) (not shown).

  The support member 140 is connected to the first electrode 122 of the light emitting element 100 by a connection member 143 such as a plating bump, for example. In addition, a terminal (not shown) insulated from the support member 140 is connected to the second electrode 120 of the light emitting element 100 by a connection member (not shown) such as a bonding wire, for example. Therefore, a voltage can be applied between the first electrode 122 and the second electrode 120 by applying different potentials to the support member 140 and the terminal.

  The light emitting device 1000 according to the present embodiment can be applied to a light source such as a projector, a display, a lighting device, and a measurement device. The same applies to the embodiments described later.

  1.2. Next, a method for manufacturing the light emitting device 1000 according to the first embodiment will be described with reference to the drawings, but is not limited to the following example.

  4 and 5 are cross-sectional views schematically showing a manufacturing process of the light-emitting device 1000, and correspond to the cross-sectional view shown in FIG.

  (1) First, as shown in FIG. 4, the buffer layer 104, the second cladding layer 106, the active layer 108, the first cladding layer 110, and the contact layer 112 are epitaxially grown in this order on the substrate 102. As a method for epitaxial growth, for example, MOCVD (Metal-Organic Chemical Vapor Deposition) method, MBE (Molecular Beam Epitaxy) method or the like can be used.

  (2) Next, as shown in FIG. 1, the reflection portion 130 can be formed on the entire surface on the first side surface 107 side, and the reflection reducing portion (not shown) can be formed on the entire surface on the second side surface 109 side. . The reflection unit 130 and the reflection reduction unit are formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, an ion assisted deposition (Ion Assisted Deposition) method, or the like.

  (3) Next, as shown in FIG. 5, the first electrode 122 is formed on the contact layer 112. The first electrode 122 is formed, for example, by forming a conductive layer on the entire surface by a vacuum deposition method and then patterning the conductive layer using a photolithography technique and an etching technique. The first electrode 122 can also be formed in a desired shape by, for example, a combination of a vacuum deposition method and a lift-off method.

  Next, as shown in FIG. 5, the second electrode 120 is formed under the entire lower surface of the substrate 102. The manufacturing method of the second electrode 120 is the same as the example of the manufacturing method of the first electrode 122 described above, for example. Note that the order of forming the first electrode 122 and the second electrode 120 is not particularly limited.

  (3) The light emitting element 100 of this embodiment is obtained by the above process as shown in FIG. Next, the connection member 143 can be formed on the first electrode 122 of the light emitting element 100 by, for example, plating.

  (4) Next, as shown in FIG. 2, the light emitting element 100 is turned over, that is, the active layer 108 side of the light emitting element 100 faces the support member 140 side (junction down), and the support member 140 emits light. The element 100 can be flip-chip mounted. Next, the second electrode 120 of the light emitting element 100 and a terminal (not shown) are connected by a connecting member (not shown). This step is performed, for example, by wire bonding.

  (5) The light emitting device 1000 of the present embodiment is obtained by the above steps as shown in FIGS. 1 and 2.

  1.3. In the light emitting element 100 included in the light emitting device 1000 according to the present embodiment, laser oscillation of light generated in the gain regions 180 and 182 can be suppressed or prevented as described above. Therefore, speckle noise can be reduced. Furthermore, in the light emitting device 1000 according to the present embodiment, light generated in the gain regions 180 and 182 can travel while receiving gain in the gain regions 180 and 182 and can be emitted to the outside. Therefore, it is possible to obtain a higher output than conventional general LEDs. As described above, according to the present embodiment, it is possible to provide a light-emitting device having a novel light-emitting element that can reduce speckle noise and has high output.

  Further, in the light emitting device 1000 according to the present embodiment, the optical member 158 refracts the first emitted light L1 and the second emitted light L2 traveling in different directions, and the third emitted light L5 and the fourth emitted light proceeding in the same direction. It can be emitted as the incident light L6. As a result, the configuration of a later-stage optical system (an optical system into which the outgoing lights L5 and L6 are incident) (not shown) can be simplified, and the optical axis alignment of the latter-stage optical system can be facilitated.

  In the light emitting device 1000 according to the present embodiment, for example, the positions of the light incident surfaces 162 and 164 and the light emitting surface 169 can be determined with reference to the second side surface 109 of the active layer 108. Thereby, alignment with the light emitting element 100 and the optical member 158 can be made easy.

  In the light emitting device 1000 according to the present embodiment, for example, part of the light generated in the first gain region 180 is reflected by the overlapping surface 178 and travels while receiving the gain in the second gain region 182. be able to. The same applies to part of the light generated in the second gain region 182. Therefore, according to the light emitting device 1000 of the present embodiment, for example, compared with a case where light is not actively reflected on the overlapping surface 178, the amplification distance of the light intensity becomes longer, so that a high light output can be obtained.

  1.4. Next, a modification of the light emitting device according to this embodiment will be described. Note that differences from the example of the light-emitting device 1000 illustrated in FIGS. 1 and 2 described above will be described, and description of similar points will be omitted.

  (1) First, a first modification will be described.

  FIG. 6 is a plan view schematically showing a light emitting device 1100 according to this modification.

  In the example of the light emitting device 1000, for example, as illustrated in FIG. 1, the light incident surfaces 162 and 164 of the optical member 158 are inclined with respect to the direction parallel to the second side surface 109 of the active layer 108, The case where it is not inclined has been described. On the other hand, in the example shown in FIG. 6, the light incident surface 165 of the optical member 158 is not inclined with respect to the direction parallel to the second side surface 109 of the active layer 108, and the emission surface can be inclined. . In the illustrated example, the light exit surface of the optical member 158 can be composed of a first exit surface 166 and a second exit surface 168. For example, the first emission surface 166 can be inclined with respect to the traveling direction (X direction) of the third emission light L5 and its perpendicular (Y direction). Similarly, the second emission surface 168 can be inclined with respect to the traveling direction (X direction) of the fourth emission light L6 and its perpendicular (Y direction), for example. Due to the inclination of the first emission surface 166 and the second emission surface 168, for example, when seen in a plan view (see FIG. 6), the intersection S thereof protrudes on the side opposite to the light emitting element 100 side. Further, the incident surfaces 165 of the first emitted light L1 and the second emitted light L2 in the optical member 158 are parallel to the second side surface 109 of the active layer 108, as shown in FIG.

As shown in FIG. 6, the first emission surface 166 is inclined to one side with respect to a direction (Y direction) parallel to the second side surface 109 of the active layer 108. The inclination angle (acute angle side) of the first emission surface 166 with respect to the direction parallel to the second side surface 109 is θ ₅ . The tilt angle θ ₅ , the refractive index n of the optical member 158, and the tilt angle (refractive angle) θ ₃ of the first refracted light L3 with respect to the perpendicular direction (X direction) of the second side surface 109 are, for example, the following formula (2): Can be met.

nsin (θ ₅ −θ ₃ ) = sin θ ₅ (2)
Thereby, the direction in which the third emitted light L5 travels can be the normal direction of the second side surface 109. The above equation (2) is derived using Snell's law when the third emitted light L5 is emitted from the optical member 158 into the air. From the above equation (2), the inclination angle θ ₅ is, for example,
θ ₅ = tan ⁻¹ {nsin θ ₃ / (n cos θ ₃ −1)}
It can be expressed as Note that the refraction angle θ ₃ , the refractive index n of the optical member 158, and the inclination angle (incident angle on the incident surface 165) θ ₁ of the first outgoing light L 1 with respect to the normal direction (X direction) of the second side surface 109 are Snell For example, the following formula (3) can be satisfied.

sin θ ₁ = nsin θ ₃ (3)
Further, as shown in FIG. 6, the second emission surface 168 is inclined to the other side with respect to the direction parallel to the second side surface 109 of the active layer 108. The inclination angle (acute angle side) of the second emission surface 168 with respect to the direction parallel to the second side surface 109 is θ ₆ . The inclination angle θ ₆ is similar to the inclination angle θ ₅ of the first emission surface 166 described above, for example,
θ ₆ = tan ⁻¹ {nsin θ ₄ / (n cos θ ₄ −1)}
It can be expressed as Thereby, the direction in which the fourth emitted light L6 travels can be the normal direction of the second side surface 109. Θ ₄ is an inclination angle of the second refracted light L 4 with respect to the normal direction of the second side surface 109. For example, the inclination angle θ ₅ of the first emission surface 166 and the inclination angle θ ₆ of the second emission surface 168 are the same.

  As described above, the optical member 158 refracts the first emitted light L1 and the second emitted light L2 traveling in different directions and emits them as the third emitted light L5 and the fourth emitted light L6 traveling in the same direction. Can do. Although not shown, both the light incident surface and the light exit surface of the optical member 158 may be inclined with respect to the direction parallel to the second side surface 109 of the active layer 108.

  (2) Next, a second modification will be described.

  FIG. 7 is a plan view schematically showing a light emitting device 1200 according to this modification.

  In the example of the light emitting device 1000, the case where one pair of gain regions 180 and 182 (gain region pair 183) is provided as shown in FIG. On the other hand, in this modification, a plurality (two in the example of FIG. 7) of gain region pairs 183 can be arranged. In the example shown in the figure, the four light emission surfaces (two second end surfaces 172 and two fourth end surfaces 176) are all provided on the second side surface 109 side. The direction (first direction) A toward the first gain region 180 of each of the plurality of gain region pairs 183 may be the same direction (example shown) for each gain region pair 183, or may be different directions. Also good. Similarly, the direction (second direction) B toward each second gain region 182 of each of the plurality of gain region pairs 183 may be the same direction (example shown) for each gain region pair 183, or different directions. It may be. In addition, the width of the first gain region 180 of each of the plurality of gain region pairs 183 in the Y direction (the direction parallel to the first side surface 107) may be the same for each gain region pair 183 (example shown in the drawing). And it may be different. Similarly, the width of the second gain region 182 in each of the plurality of gain region pairs 183 in the Y direction may be the same for each gain region pair 183 (example shown in the figure) or may be different. Moreover, in this modification, as shown in FIG. 7, all the 2nd end surfaces 172 and 4th end surfaces 176 in the light-emitting device 1200 can be made not to mutually overlap.

  As shown in FIG. 7, the optical member 157 according to the present modification includes the first gain region 180 of the plurality of gain region pairs 183 on the same side surface side (the second side surface 109 side in the illustrated example) of the active layer 108. All of the lights L1 and L2 emitted from the end face 172 and the end face 176 of the second gain region 182 are incident. The optical member 157 can refract all these lights L1 and L2 and emit them as lights L5 and L6 traveling in the same direction.

  In the present modification, as shown in FIG. 7, one integral optical member 157 can be arranged for a plurality of gain region pairs 183. In the illustrated example, the shape of the optical member 157 is a shape in which two optical members 158 of the example of the light emitting device 1000 are connected. The incident surface of one optical member 157 according to this modification example includes two first incident surfaces 162 and two second incident surfaces 164. It should be noted that a plurality of optical members 158 in the example of the light emitting device 1000 can be individually arranged for each of the plurality of gain region pairs 183.

  In this modification, the optical member 157 is preferably disposed close to the light emitting element 100, and the optical member 157 is more preferably in contact with the light emitting element 100. Alternatively, it is preferable that the plurality of gain region pairs 183 are arranged away from each other so as not to contact each other. By means of at least one of these arrangement means, the corresponding first outgoing light L1 and second outgoing light L2 are separately incident on each of the first incident surface 162 and the second incident surface 164 of the optical member 157. be able to. That is, the first outgoing light L1 emitted from one gain region pair 183 and the second outgoing light L2 emitted from the other gain region pair 183 have one incident surface (first incident surface 162 or second incident surface 162). Incident light can be prevented from entering the incident surface 164).

  (3) Next, a third modification will be described.

  FIG. 8 is a plan view schematically showing a light emitting device 1300 according to this modification.

In the example of the light emitting device 1000, the case where the light incident surfaces 162 and 164 and the light exit surface 169 of the optical member 158 are exposed as illustrated in FIGS. 1 and 2 has been described. On the other hand, in this modification, as shown in FIG. 8, the light incident surfaces 162 and 164 and the light exit surface 169 of the optical member 158 can be covered with a reflection reducing member 159. The reflection reducing member 159 can reduce the reflectance with respect to the wavelength of light. Thereby, the reflection loss of light can be reduced. The reflection reducing member 159 does not need to cover the entire incident surfaces 162 and 164 and the exit surface 169, and only covers at least the light incident region and the exit region of the optical member 158. The reflection reducing member 159 can cover at least one of the light incident area and the light emitting area of the optical member 158. The reflection reducing member 159 can be made of at least one substance having a refractive index different from that of the optical member 158. As the reflection reducing member 159, for example, when the optical member 158 is made of glass, a laminated film of SiN and SiO ₂ can be used. The reflection reducing member 159 is formed by, for example, a CVD method.

  (4) Next, a fourth modification will be described.

  FIG. 9 is a cross-sectional view schematically showing a light emitting device 1400 according to this modification. Note that the cross-sectional view shown in FIG. 9 corresponds to the cross-sectional view shown in FIG.

In the example of the light emitting device 1000, the case where the first electrode 122 has the same planar shape as the gain regions 180 and 182 from the top to the bottom has been described. On the other hand, for example, in the example shown in FIG. 9, the lower portion of the first electrode 122 can have a planar shape different from that of the gain regions 180 and 182. In this modification, the insulating layer 202 having an opening can be formed under the contact layer 112, and the first electrode 122 filling the opening can be formed. The first electrode 122 is formed in the opening and under the insulating layer (including the opening) 202. In this modification, the upper portion of the first electrode 122 has the same planar shape as the gain regions 180 and 182, and the lower portion of the first electrode 122 has the same planar shape as the insulating layer 202. As the insulating layer 202, for example, a SiN layer, a SiO ₂ layer, a polyimide layer, or the like can be used. The insulating layer 202 is formed by, for example, a CVD method or a coating method. For example, the first electrode 122 is directly bonded to the support member 140. This joining is performed by, for example, alloy joining or joining using a solder paste.

  According to this modification, since the volume under the first electrode 122 can be increased as compared with the example of the light emitting device 1000, the light emitting device 1400 having excellent heat dissipation can be provided.

  (5) Next, a fifth modification will be described.

  FIG. 10 is a plan view schematically showing a light emitting device 1500 according to this modification.

  In the example of the light emitting device 1000, as shown in FIG. 1, a reflection unit 130 is provided, light is reflected on the first side surface 107 side of the light emitting element 100, and light L1, L2 is emitted from the second side surface 109 side. explained. On the other hand, in this modification, as shown in FIG. 10, the light L1 and L2 are emitted from both the first side surface 107 side and the second side surface 109 side of the light emitting element 100 without providing the reflector 130. Can do. That is, the first emitted light L1 is emitted from the first end surface 170 and the second end surface 172 of the first gain region 180, and the second emitted light L2 is emitted from the third end surface 174 and the fourth end surface 176 of the second gain region 182. Can be done.

  Further, in the present modification, the first end surface 170 and the third end surface 174 may completely overlap as shown in FIG. 10 or may overlap with each other, although not shown. It does not have to be.

  (6) Next, a sixth modification will be described.

  In the example of the light emitting device 1000, the case where the third emitted light L5 and the fourth emitted light L6 are in the same direction and travel in the normal direction of the second side surface 109 of the active layer 108 as illustrated in FIG. . On the other hand, in the present modification, although not shown, the third emitted light L5 and the fourth emitted light L6 are in the same direction and inclined with respect to the normal direction of the second side surface 109 of the active layer 108. You can go forward. The adjustment of the traveling directions of the third emitted light L5 and the fourth emitted light L6 may be performed by appropriately adjusting the inclination angles of the first incident surface 162 and the second incident surface 164 in the optical member 158, for example. it can.

  (7) Next, a seventh modification will be described.

  In the example of the light emitting device 1000, the planar shape of the gain regions 180 and 182 has been described as being linear as shown in FIG. 1. However, in this modification, for example, the gain regions 180 and 182 are not illustrated. The planar shape can be a curved line or a combination of a straight line and a curved line.

  (8) Next, an eighth modification will be described.

  In the example of the light-emitting device 1000, the case where the light-emitting element 100 is an InGaAlP-based semiconductor light-emitting element has been described. However, in this modification, any material system capable of forming a light-emitting gain region can be used. As the semiconductor material, for example, an AlGaN-based, InGaN-based, GaAs-based, InGaAs-based, GaInNAs-based, or ZnCdSe-based semiconductor material can be used. Moreover, in this modification, an organic material etc. can also be used, for example.

  (9) The modification is not limited to the above-described example. For example, it is possible to appropriately combine the modified examples. Further, these modifications can be applied to the embodiments described later as needed.

2. Second Embodiment 2.1. Next, a light emitting device 2000 according to the second embodiment will be described.

  FIG. 11 is a cross-sectional view schematically showing the light emitting device 2000. The cross-sectional view shown in FIG. 11 corresponds to the cross-sectional view shown in FIG. 2 in the light emitting device 1000 according to the first embodiment. Further, in the light emitting device 2000 according to the second embodiment, members having the same functions as those of the constituent members of the light emitting device 1000 according to the first embodiment described above are denoted by the same reference numerals, and detailed descriptions thereof are given. Omitted.

  The light emitting device 2000 includes a light emitting element 600 and an optical member 158. The light emitting device 2000 can further include a support member 140, for example.

  As illustrated in FIG. 11, the light emitting device 600 includes a first cladding layer 110, an active layer 108, a second cladding layer 106, and an insulating portion 602. The light emitting device 600 can further include, for example, a first electrode 122, a second electrode 120, a substrate 102, a buffer layer 104, and a contact layer 112.

  The entire active layer 108 constitutes a first gain region 180 and a second gain region 182. For example, the second cladding layer 106, the active layer 108, the first cladding layer 110, and the contact layer 112 have the same planar shape as the gain regions 180 and 182. For example, at least a portion of the contact layer 112 on the side of the contact surface with the first electrode 122 (lower portion of the contact layer 112) can constitute a columnar semiconductor deposited body (hereinafter referred to as “columnar portion”) 610. For example, as shown in FIG. 11, the second cladding layer 106, the active layer 108, the first cladding layer 110, and the contact layer 112 can constitute a columnar portion 610.

  As shown in FIG. 11, the insulating portion 602 is provided on the side of the columnar portion 610. The insulating portion 602 is formed, for example, under a layer (buffer layer 104 in the illustrated example) that is in contact with the opposite side of the columnar portion 610 to the first electrode 122 side. The insulating unit 602 is formed between the first electrode 122 and the buffer layer 104. For example, the insulating unit 602 can cover at least the side surface of the active layer 108 between the first side surface 107 and the second side surface 109 of the active layer 108. For example, of the side surfaces of the columnar portion 610, the side surfaces other than the first side surface 107 side and the second side surface 109 side are covered with the insulating portion 602. As shown in FIG. 11, the insulating part 602 is in contact with the side surface of the columnar part 610. The current between the electrodes 120 and 122 can flow through the columnar portion 610 sandwiched between the insulating portions 602, avoiding the insulating portions 602. For example, the current path between the electrodes 120 and 122 is determined by the planar shape of the columnar portion 610, and as a result, the planar shape of the gain regions 180 and 182 is determined. Although not shown, the columnar portion 610 and the insulating portion 602 can also be formed on the substrate 102 side.

The insulating unit 602 can have a refractive index lower than that of the active layer 108, for example. Thereby, light can be efficiently confined in the active layer 108. In the light emitting device 600 according to the present embodiment, the light generated in the gain regions 180 and 182 propagates in the axial direction (first direction A and second direction B) of the gain regions 180 and 182 formed by the difference in refractive index. To the propagation mode For this reason, there is almost no light that propagates in a direction different from the axial direction of the gain regions 180 and 182. For example, when the first end face 170 and the second end face 172 facing each other in the first gain region 180 overlap in a plan view from the first side face 107 side, the first end face 170 and the second end face are overlapped at the overlapping portion. The direction connecting the end face 172 perpendicularly is different from the axial direction of the first gain region 180. For this reason, there is almost no light propagating in the direction connecting the first end face 170 and the second end face 172 vertically. The same applies to the second gain region 182. Accordingly, each of the gain regions 180 and 182 is provided in a direction inclined with respect to the normal line P of the first side surface 107, and the light emitting element 600 that emits light other than laser light by suppressing or preventing multiple reflection of light. Can be obtained. As the insulating portion 602, for example, a SiN layer, a SiO ₂ layer, a polyimide layer, or the like can be used.

  For example, as shown in FIG. 11, the first electrode 122 is formed on the entire surface under the columnar portion 610 and the insulating portion 602. Thereby, since the volume of the 1st electrode 122 increases compared with the example of the light-emitting device 1000 shown in FIG.1 and FIG.2 mentioned above, the light-emitting device 2000 excellent in heat dissipation can be provided.

  2.2. Next, an example of a method for manufacturing the light emitting device 2000 according to the second embodiment will be described with reference to the drawings, but is not limited to the following example. Note that differences from the method of manufacturing the light emitting device 1000 according to the first embodiment described above will be described, and detailed description of similar points will be omitted.

  12 and 13 are cross-sectional views schematically showing a manufacturing process of the light-emitting device 2000, and correspond to the cross-sectional view shown in FIG.

  (1) First, the buffer layer 104, the second cladding layer 106, the active layer 108, the first cladding layer 110, and the contact layer 112 are formed on the substrate 102.

  (2) Next, as shown in FIG. 12, the second cladding layer 106, the active layer 108, the first cladding layer 110, and the contact layer 112 are patterned. The patterning is performed using, for example, a photolithography technique and an etching technique. By this step, the columnar portion 610 can be formed.

  (3) Next, as shown in FIG. 13, an insulating portion 602 is formed so as to cover the side surface of the columnar portion 610. Specifically, first, an insulating layer (not shown) is formed on the entire surface of the buffer layer 104 (including on the contact layer 112) by, for example, a CVD method or a coating method. Next, the upper surface of the contact layer 112 is exposed using, for example, an etching technique. Through the above steps, the insulating portion 602 can be obtained.

  Next, the reflection unit 130, the reflection reduction unit, the first electrode 122, and the second electrode 120 are formed. As shown in FIG. 13, the first electrode 122 may be formed over the entire surface of a flat surface, so that the risk of disconnection of the first electrode 122 can be reduced. Moreover, since the patterning process of the 1st electrode 122 is unnecessary, a manufacturing process can be simplified.

  (4) Through the above steps, the light emitting device 600 of this embodiment is obtained as shown in FIG. In the present embodiment, the connection member 143 (see FIG. 2) can not be formed on the first electrode 122 of the light emitting element 600.

  (5) The subsequent steps are the same as the steps in the method for manufacturing the light emitting device 1000 according to the first embodiment described above.

  (6) The light emitting device 2000 of the present embodiment is obtained through the above steps.

  2.3. According to the present embodiment, as in the first embodiment described above, it is possible to provide a light emitting device having a novel light emitting element that can reduce speckle noise and has high output.

  2.4. Next, a modification of the light emitting device according to this embodiment will be described. Note that differences from the example of the light-emitting device 2000 illustrated in FIG. 11 described above will be described, and description of similar points will be omitted.

  FIG. 14 is a cross-sectional view schematically showing a manufacturing process of the light emitting device according to this modification. 14 corresponds to the cross-sectional view illustrated in FIG. 11 in the example of the light-emitting device 2000.

  In the example of the light emitting device 2000, as shown in FIG. 12, after forming the columnar portion 610, an insulating layer (not shown) is formed, and then the contact layer 112 is exposed to form the insulating portion 602. Explained the case. On the other hand, in this modification, first, as shown in FIG. 14, for example, the region above the contact layer 112 and above the gain regions 180 and 182 is covered with a mask layer 704 such as a photoresist. Next, ions 706 such as protons are implanted to a depth reaching the upper surface of the buffer layer 104, for example, using the mask layer 704 as a mask. Through the above steps, the insulating portion 602 according to the present modification can be formed.

  The modification is not limited to the above-described example. Moreover, this modification and the example of the light-emitting device 2000 are applicable also to embodiment mentioned above as needed.

  3. Although the embodiments of the present invention have been described in detail as described above, those skilled in the art will readily understand that many modifications are possible without substantially departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention.

1 is a plan view schematically showing a light emitting device according to a first embodiment. 1 is a cross-sectional view schematically showing a light emitting device according to a first embodiment. The figure which looked at the active layer of 1st Embodiment planarly from the 1st side surface side. Sectional drawing which shows schematically the manufacturing process of the light-emitting device of 1st Embodiment. Sectional drawing which shows schematically the manufacturing process of the light-emitting device of 1st Embodiment. The top view which shows roughly the 1st modification of the light-emitting device of 1st Embodiment. The top view which shows roughly the 2nd modification of the light-emitting device of 1st Embodiment. The top view which shows roughly the 3rd modification of the light-emitting device of 1st Embodiment. Sectional drawing which shows schematically the 4th modification of the light-emitting device of 1st Embodiment. The top view which shows roughly the 5th modification of the light-emitting device of 1st Embodiment. Sectional drawing which shows schematically the light-emitting device of 2nd Embodiment. Sectional drawing which shows schematically the manufacturing process of the light-emitting device of 2nd Embodiment. Sectional drawing which shows schematically the manufacturing process of the light-emitting device of 2nd Embodiment. Sectional drawing which shows schematically the manufacturing process of the modification of the light-emitting device of 2nd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Light emitting element, 102 board | substrate, 104 buffer layer, 106 2nd clad layer, 107 1st side surface, 108 active layer, 109 2nd side surface, 110 1st clad layer, 112 contact layer, 120 2nd electrode, 122 1st electrode , 130 Reflector, 140 Support member, 143 Connection member, 157, 158 Optical member, 159 Reflection reduction member, 162 First incident surface, 164 Second incident surface, 165 Incident surface, 166 First exit surface, 168 Second exit Surface, 169 exit surface, 170 first end surface, 172 second end surface, 174 third end surface, 176 fourth end surface, 178 overlapping surface, 180 first gain region, 182 second gain region, 183 gain region pair, 202 insulating layer , 600 light-emitting element, 602 insulating portion, 610 columnar portion, 704 mask layer, 706 ions, 1000, 11 0,1200,1300,1400,1500,2000 light-emitting device

Claims (13)

A light emitting element;
At least one optical member provided on a side of the light emitting element;
Including
The light emitting element is
A cladding layer;
An active layer formed above the cladding layer;
Another cladding layer formed above the active layer;
Have
At least a part of the active layer constitutes a plurality of gain regions,
The gain region is provided in a direction inclined with respect to a normal to the one side surface from one side surface to the other side surface of the active layer in a plan view.
The plurality of gain regions form at least one gain region pair;
One first gain region of the pair of gain regions is provided toward one direction;
The other second gain region of the pair of gain regions is provided in another direction different from the one direction;
The light emitting device, wherein the optical member refracts light emitted from an end surface of the first gain region and an end surface of the second gain region on the same side surface side of the active layer and emits the light as light traveling in the same direction. In claim 1,
The light-emitting device, wherein a light incident surface of the optical member is inclined with respect to a direction in which incident light travels and a perpendicular to the incident light when viewed in a plan view. In claim 1 or 2,
The light emitting device, wherein the light emission surface of the optical member is inclined with respect to the direction in which the emitted light travels and the perpendicular to the light emission surface when viewed in a plan view. In any one of Claims 1 thru | or 3,
The direction in which the light emitted from the optical member travels is the direction perpendicular to the side surface of the active layer from which the light incident on the optical member is emitted. In any one of Claims 1 thru | or 4,
The light incident surface of the optical member includes a first incident surface and a second incident surface,
The first incident surface is inclined to one side with respect to a direction parallel to the side surface of the active layer from which light incident on the optical member is emitted in plan view.
The second incident surface is inclined to the other side with respect to a direction parallel to the side surface of the active layer from which light incident on the optical member is emitted in plan view.
The light emitting device, wherein a light emission surface of the optical member is parallel to a side surface of the active layer from which light incident on the optical member is emitted in a plan view. In any one of Claims 1 thru | or 4,
The light exit surface of the optical member comprises a first exit surface and a second exit surface,
The first emission surface is inclined to one side with respect to a direction parallel to a side surface of the active layer from which light incident on the optical member is emitted in plan view.
The second emission surface is inclined to the other side with respect to a direction parallel to the side surface of the active layer from which light incident on the optical member is emitted in plan view.
The light-emitting device, wherein a light incident surface of the optical member is parallel to a side surface of the active layer from which light incident on the optical member is emitted in plan view. In any one of Claims 1 thru | or 6.
At least a part of the end face on the one side surface side of the first gain region and at least a part of the end surface on the one side surface side of the second gain region are the same side surface side of the active layer Are overlapping,
The light emitting device, wherein a reflectance of the one side surface is higher than a reflectance of the other side surface in a wavelength band of light generated in the plurality of gain regions. In any one of Claims 1 thru | or 7,
In the gain region, when viewed in plan from the one side surface, the end surface on the one side surface and the end surface on the other side surface do not overlap each other. In any one of Claims 1 thru | or 8.
The light emitting element is
An electrode electrically connected to the cladding layer;
Another electrode electrically connected to the other cladding layer;
A light emitting device. In any one of Claims 1 thru | or 9,
A plurality of pairs of the gain regions are arranged,
The optical member refracts light emitted from an end surface of the first gain region and an end surface of the second gain region of a plurality of pairs of the gain regions on the same side surface side of the active layer so that they are all in the same direction. A light emitting device that emits light as traveling light. In claim 10,
The optical member is a light emitting device in contact with the light emitting element. In any one of Claims 1 thru | or 11,
The optical member is a light emitting device having transparency with respect to a wavelength of light emitted from the light emitting element. In any one of Claims 1 to 12,
The light emitting device, wherein at least one of the light incident region and the light emitting region in the optical member is covered with a reflection reducing member.

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