JP2009220238A - Amorphous carbon coated tool - Google Patents
Amorphous carbon coated tool Download PDFInfo
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- JP2009220238A JP2009220238A JP2008068676A JP2008068676A JP2009220238A JP 2009220238 A JP2009220238 A JP 2009220238A JP 2008068676 A JP2008068676 A JP 2008068676A JP 2008068676 A JP2008068676 A JP 2008068676A JP 2009220238 A JP2009220238 A JP 2009220238A
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- amorphous carbon
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- coated tool
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- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 141
- 239000001257 hydrogen Substances 0.000 claims abstract description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 54
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 238000011084 recovery Methods 0.000 claims description 9
- 238000001237 Raman spectrum Methods 0.000 claims description 8
- 238000001069 Raman spectroscopy Methods 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 238000005299 abrasion Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000005520 cutting process Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 238000007733 ion plating Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- -1 ferrous metals Chemical class 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000005553 drilling Methods 0.000 description 4
- 238000001678 elastic recoil detection analysis Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/027—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0047—Drilling of holes
Abstract
Description
本発明は、非晶質炭素膜を基材に被覆した非晶質炭素被覆工具に関する。 The present invention relates to an amorphous carbon-coated tool in which an amorphous carbon film is coated on a substrate.
アルミニウム合金や真鍮などの非鉄金属、有機材料、グラファイトなど硬質粒子を含有する材料、電子関連プリント回路基板などの加工が増加している。このような被削材は、切削工具の切れ刃部分に被削材が溶着して切削抵抗が大きくなり、刃先が欠損しやすい。そのため、このような被削材を切削加工する場合には、非晶質炭素被覆工具が用いられる。従来の非晶質炭素被覆工具としては、非晶質カーボン膜中における水素量が５原子％以下である非晶質カーボン被覆工具がある（例えば、特許文献１参照。）。また、実質的に水素を含まないベース層と、ベース層の上に設けられるとともに２原子％〜２０原子％の範囲内で水素を含む水素含有層との２層構造を成しているＤＬＣ被膜を被覆したＤＬＣ被膜被覆工具がある（例えば、特許文献２参照。）。しかしながら、これらの工具は被膜と基材との密着性が十分でないという問題があった。 Processing of non-ferrous metals such as aluminum alloys and brass, organic materials, materials containing hard particles such as graphite, and electronic-related printed circuit boards are increasing. In such a work material, the work material is welded to the cutting edge portion of the cutting tool, the cutting resistance increases, and the cutting edge tends to be damaged. Therefore, when cutting such a work material, an amorphous carbon-coated tool is used. As a conventional amorphous carbon-coated tool, there is an amorphous carbon-coated tool in which the amount of hydrogen in the amorphous carbon film is 5 atomic% or less (see, for example, Patent Document 1). Also, a DLC film having a two-layer structure of a base layer that substantially does not contain hydrogen and a hydrogen-containing layer that is provided on the base layer and contains hydrogen within the range of 2 atomic% to 20 atomic% There is a DLC film coated tool coated with (see, for example, Patent Document 2). However, these tools have a problem that the adhesion between the coating and the substrate is not sufficient.
非晶質炭素被覆工具に対して、高能率加工、長寿命および被削材の仕上げ品位を良くすることが求められている。これらの要求に答えるため、本発明は非晶質炭素膜と基材との密着性に優れるとともに耐摩耗性に優れた非晶質炭素被覆工具を提供することを目的とする。 For amorphous carbon-coated tools, it is required to improve high-efficiency machining, long life, and finish quality of the work material. In order to meet these requirements, an object of the present invention is to provide an amorphous carbon-coated tool that is excellent in adhesion between an amorphous carbon film and a base material and has excellent wear resistance.
本発明者は非晶質炭素被覆工具の開発を行ってきたところ、基材側に水素量が多い非晶質炭素膜を被覆した後に、表面側に水素量が少ない非晶質炭素膜を被覆すると、耐摩耗性が優れるとともに、非晶質炭素膜と基材との密着性に優れた非晶質炭素被覆工具が得られるという知見を得て本発明を完成するに至った。 The present inventor has developed an amorphous carbon coating tool. After coating an amorphous carbon film with a large amount of hydrogen on the substrate side, an amorphous carbon film with a small amount of hydrogen is coated on the surface side. As a result, the present invention was completed upon obtaining the knowledge that an amorphous carbon-coated tool having excellent wear resistance and excellent adhesion between the amorphous carbon film and the substrate can be obtained.
すなわち、本発明の非晶質炭素被覆工具は、基材と非晶質炭素膜とを備え、非晶質炭素膜は基材側の内層部と表面側の外層部とからなり、非晶質炭素膜の内層部に含まれる水素量は、非晶質炭素膜の外層部に含まれる水素量よりも多いというものである。 That is, the amorphous carbon-coated tool of the present invention comprises a base material and an amorphous carbon film, and the amorphous carbon film comprises an inner layer portion on the base material side and an outer layer portion on the surface side, and is amorphous. The amount of hydrogen contained in the inner layer portion of the carbon film is larger than the amount of hydrogen contained in the outer layer portion of the amorphous carbon film.
本発明の非晶質炭素被覆工具の基材としては、高速度鋼、超硬合金、セラミックス、超高圧焼結体などを挙げることができる。その中でも超硬合金は硬さと靭性に優れるのでさらに好ましい。 Examples of the base material for the amorphous carbon-coated tool of the present invention include high-speed steel, cemented carbide, ceramics, and ultra-high pressure sintered body. Among these, cemented carbide is more preferable because it is excellent in hardness and toughness.
本発明の非晶質炭素膜は、硬質炭素膜、ダイヤモンドライクカーボン膜、ＤＬＣ膜、a−C:H膜、i−カーボン膜、ta−C膜などと呼ばれるものを含む。 The amorphous carbon film of the present invention includes what is called a hard carbon film, a diamond-like carbon film, a DLC film, an aC: H film, an i-carbon film, a ta-C film, and the like.
本発明の非晶質炭素膜は、基材に接する内層部と表面側の外層部とからなる。非晶質炭素膜の内層部に含まれる水素量は、非晶質炭素膜の外層部に含まれる水素量よりも多い。これは、非晶質炭素膜の水素量が低いと、非晶質炭素膜の硬さは高いが非晶質炭素膜と基材との密着性は低く、非晶質炭素膜の水素量が高いと、基材との密着性は高くなるになるという知見から定めたものである。その中でも、非晶質炭素膜の内層部の水素量が基材側から表面側に向かって水素量が徐々に減少するという濃度勾配を持つと密着性の向上と被膜硬さの低下を防止できるため、さらに好ましい。 The amorphous carbon film of the present invention comprises an inner layer portion in contact with the substrate and an outer layer portion on the surface side. The amount of hydrogen contained in the inner layer portion of the amorphous carbon film is greater than the amount of hydrogen contained in the outer layer portion of the amorphous carbon film. This is because when the amount of hydrogen in the amorphous carbon film is low, the hardness of the amorphous carbon film is high, but the adhesion between the amorphous carbon film and the substrate is low, and the amount of hydrogen in the amorphous carbon film is low. It is determined from the knowledge that if it is high, the adhesion to the substrate becomes high. Among them, when the hydrogen concentration in the inner layer portion of the amorphous carbon film has a concentration gradient in which the hydrogen amount gradually decreases from the substrate side to the surface side, it is possible to prevent adhesion and decrease in coating hardness. Therefore, it is more preferable.
本発明の非晶質炭素膜の外層部に含まれる水素量は０．５原子％未満であり、非晶質炭素膜の内層部に含まれる水素量は０．５原子％以上３原子％以下であると、さらに好ましい。これは、非晶質炭素膜の水素量が０．５原子％未満であると、非晶質炭素膜の硬さは高いが非晶質炭素膜と基材との密着性は低く、非晶質炭素膜の水素量が０．５原子％以上であると基材との密着性は高くなるが、非晶質炭素膜の水素量が３原子％を超えて多くなると非晶質炭素膜の硬さの低下が顕著になるためである。非晶質炭素膜の水素量およびその濃度勾配は、ヘリウムなどの高エネルギー重イオンを入射粒子として用いた弾性反跳粒子検出法（ＥＲＤＡ）を使用することで測定することができる。 The amount of hydrogen contained in the outer layer portion of the amorphous carbon film of the present invention is less than 0.5 atomic%, and the amount of hydrogen contained in the inner layer portion of the amorphous carbon film is 0.5 atomic percent or more and 3 atomic percent or less. Is more preferable. This is because when the amount of hydrogen in the amorphous carbon film is less than 0.5 atomic%, the hardness of the amorphous carbon film is high, but the adhesion between the amorphous carbon film and the substrate is low, and the amorphous carbon film is amorphous. When the hydrogen content of the carbonaceous film is 0.5 atomic% or more, the adhesion to the substrate is increased, but when the hydrogen content of the amorphous carbon film exceeds 3 atomic%, the amorphous carbon film This is because the decrease in hardness becomes remarkable. The amount of hydrogen in the amorphous carbon film and its concentration gradient can be measured by using an elastic recoil detection method (ERDA) using high energy heavy ions such as helium as incident particles.
本発明の非晶質炭素膜における内層部の厚さは、非晶質炭素膜の膜厚の１〜１０％が好ましい。非晶質炭素膜の内層部の厚さが非晶質炭素膜全体の膜厚の１％未満であると耐摩耗性を高くする効果が十分に得られず、非晶質炭素膜の内層部の厚さが非晶質炭素膜全体の膜厚の１０％を超えると非晶質炭素膜全体の硬さが低下する。そのため、非晶質炭素膜の内層部の厚さは、非晶質炭素膜全体の膜厚の１〜１０％であると好ましく、非晶質炭素膜の外層部の厚さは非晶質炭素膜の膜厚の９０〜９９％であると好ましい。 The thickness of the inner layer portion in the amorphous carbon film of the present invention is preferably 1 to 10% of the film thickness of the amorphous carbon film. If the thickness of the inner layer portion of the amorphous carbon film is less than 1% of the total thickness of the amorphous carbon film, the effect of increasing the wear resistance cannot be sufficiently obtained, and the inner layer portion of the amorphous carbon film is not obtained. If the thickness exceeds 10% of the total film thickness of the amorphous carbon film, the hardness of the entire amorphous carbon film decreases. Therefore, the thickness of the inner layer portion of the amorphous carbon film is preferably 1 to 10% of the total thickness of the amorphous carbon film, and the thickness of the outer layer portion of the amorphous carbon film is preferably amorphous carbon. It is preferable that it is 90 to 99% of the film thickness.
ナノインデンテーション法による非晶質炭素膜の硬さは２０ＧＰａ以上１００ＧＰａ以下であることが好ましい。硬さが２０ＧＰａ未満であると耐摩耗性が低下し、１００ＧＰａを超えると刃先の耐欠損性が低下するためである。その中でも、ナノインデンテーション法による非晶質炭素膜の硬さは３０ＧＰａ以上８０ＧＰａ以下であるとさらに好ましい。 The hardness of the amorphous carbon film by the nanoindentation method is preferably 20 GPa or more and 100 GPa or less. This is because if the hardness is less than 20 GPa, the wear resistance decreases, and if it exceeds 100 GPa, the chipping resistance of the cutting edge decreases. Among these, the hardness of the amorphous carbon film by the nanoindentation method is more preferably 30 GPa or more and 80 GPa or less.
非晶質炭素膜の弾性復元率は式１で定義される。
［式１］弾性復元率（％）＝（Ｈｍａｘ−Ｈｆ）／Ｈｍａｘ×１００（％）
最大押し込み深さをＨｍａｘとし、荷重除荷後の押し込み深さ（圧痕深さ）をＨｆとした場合、（Ｈｍａｘ−Ｈｆ）／Ｈｍａｘの値を弾性復元率と呼ぶ。本発明の非晶質炭素膜の弾性復元率は７０〜１００％であると好ましい。非晶質炭素膜の弾性復元率が７０％未満であると塑性変形しやすいので、非晶質炭素膜の弾性復元率は７０〜１００％であると好ましい。
The elastic recovery rate of the amorphous carbon film is defined by Equation 1.
[Formula 1] Elastic recovery rate (%) = (Hmax−Hf) / Hmax × 100 (%)
When the maximum indentation depth is Hmax and the indentation depth (indentation depth) after unloading is Hf, the value of (Hmax−Hf) / Hmax is referred to as the elastic recovery rate. The elastic recovery rate of the amorphous carbon film of the present invention is preferably 70 to 100%. When the elastic recovery rate of the amorphous carbon film is less than 70%, plastic deformation is likely to occur. Therefore, the elastic recovery rate of the amorphous carbon film is preferably 70 to 100%.
本発明の非晶質炭素膜の膜厚は、０．０６〜５μｍであると好ましい。非晶質炭素膜の膜厚が０．０６μｍ未満であると非晶質炭素膜を被覆する効果が得られず、５μｍを超えると非晶質炭素膜の圧縮応力が大きくなり、非晶質炭素膜と基材との密着性が低下する。そのため、本発明の非晶質炭素膜の膜厚は０．０６〜５μｍであると好ましい。 The thickness of the amorphous carbon film of the present invention is preferably 0.06 to 5 μm. If the thickness of the amorphous carbon film is less than 0.06 μm, the effect of covering the amorphous carbon film cannot be obtained, and if it exceeds 5 μm, the compressive stress of the amorphous carbon film increases, The adhesion between the film and the substrate is reduced. Therefore, the film thickness of the amorphous carbon film of the present invention is preferably 0.06 to 5 μm.
本発明の非晶質炭素被覆工具の基材に存在する圧縮応力は、耐欠損性や非晶質炭素膜と基材との密着性に影響を及ぼす。鏡面、研削面、焼肌面など基材の表面状態に関係なく、本発明の非晶質炭素被覆工具の基材に存在する圧縮応力が０．３ＧＰａ以下であると好ましい。基材の圧縮応力が０．３ＧＰａを超えると、非晶質炭素膜にチッピングが発生しやすくなる。基材に存在する圧縮応力は２θ−ｓｉｎ2ψ法による測定できる。具体的には、下記の式２、式３を用いて基材の圧縮応力を測定することができる。なお、ＷＣを主成分とする超硬合金基材の場合は、ＷＣに存在する圧縮応力を基材に存在する圧縮応力とみなすことができる。
［式２］応力σ=-E/(2・(1+υ))・cotθ0・π/180・δ(2θ)/δ(sin2ψ)
［式３］応力σ=K・δ(2θ)/δ(sin2ψ)
ψ：試料面法線と格子面法線のなす角
σ：応力（ＭＰａ）
E：ヤング率（ＭＰａ）
υ：ポアソン比
θ0：標準ブラッグ角（度）
K：材料物性および標準ブラッグ角θ0で決まる定数
The compressive stress existing in the base material of the amorphous carbon-coated tool of the present invention affects the fracture resistance and the adhesion between the amorphous carbon film and the base material. Regardless of the surface state of the substrate such as a mirror surface, a ground surface, or a burned surface, the compressive stress present in the substrate of the amorphous carbon-coated tool of the present invention is preferably 0.3 GPa or less. If the compressive stress of the substrate exceeds 0.3 GPa, chipping is likely to occur in the amorphous carbon film. The compressive stress existing in the substrate can be measured by the 2θ-sin 2 ψ method. Specifically, the compressive stress of the substrate can be measured using the following formulas 2 and 3. In addition, in the case of the cemented carbide base material which has WC as a main component, the compressive stress which exists in WC can be considered as the compressive stress which exists in a base material.
[Formula 2] Stress σ = -E / (2 ・ (1 + υ)) ・ cotθ 0・ π / 180 ・ δ (2θ) / δ (sin 2 ψ)
[Formula 3] Stress σ = K · δ (2θ) / δ (sin 2 ψ)
ψ: Angle between sample surface normal and lattice surface normal σ: Stress (MPa)
E: Young's modulus (MPa)
υ: Poisson's ratio θ 0 : Standard Bragg angle (degrees)
K: Constant determined by material properties and standard Bragg angle θ 0
５１４．５ｎｍの波長を持つアルゴンガスレーザーを用いたラマン分光法により波数８００〜２０００ｃｍ-1の範囲でラマンスペクトルを測定したときに、従来の高結晶性熱分解グラファイト膜のラマンスペクトルは波数１５８０ｃｍ-1付近に１つのＧバンドと呼ばれるラマンピークが現れる。そして高結晶性熱分解グラファイト膜の結晶性が低下するに従って波数１３５０ｃｍ-1付近にブロードなＤバンドと呼ばれるラマンピークが現れる。 When a Raman spectrum was measured in the range of wave numbers 800 to 2000 cm −1 by Raman spectroscopy using an argon gas laser having a wavelength of 514.5 nm, the Raman spectrum of the conventional highly crystalline pyrolytic graphite film was 1580 cm − Raman peak called single G band appears near 1. As the crystallinity of the highly crystalline pyrolytic graphite film decreases, a Raman peak called a broad D band appears in the vicinity of a wave number of 1350 cm −1 .
５１４．５ｎｍの波長を持つアルゴンガスレーザーを用いたラマン分光法により波数８００〜２０００ｃｍ-1の範囲でラマンスペクトルを測定したときに、本発明の非晶質炭素膜のラマンスペクトルは、波数１３５０ｃｍ-1付近にピークはほとんど見られず、波数１５６０〜１６００ｃｍ-1の範囲内に第１ピークがあり、波数１１００〜１２００ｃｍ-1の範囲内に第２ピークがあると非晶質炭素膜の硬さが増加する傾向を示す。そのため、本発明の非晶質炭素膜のラマンスペクトルは、波数１５６０〜１６００ｃｍ-1の範囲内に第１ピークがあり、波数１１００〜１２００ｃｍ-1の範囲内に第２ピークがあるとさらに好ましい。 When a Raman spectrum was measured in the range of a wave number of 800 to 2000 cm −1 by Raman spectroscopy using an argon gas laser having a wavelength of 514.5 nm, the Raman spectrum of the amorphous carbon film of the present invention had a wave number of 1350 cm −. peak hardly observed in the vicinity of 1, there is a first peak in a wave number range of 1560～1600Cm -1, hardness and there is a second peak in the wave number range of 1100～1200Cm -1 amorphous carbon film Shows a tendency to increase. Therefore, the Raman spectrum of the amorphous carbon film of the present invention, there is a first peak in a wave number range of 1560～1600Cm -1, further preferred that there is a second peak in the wave number range of 1100~1200cm -1.
本発明の非晶質炭素膜は、ダイヤモンドに匹敵する高い硬さを有し、切削工具として用いた場合、優れた耐摩耗性を発揮する。本発明の非晶質炭素膜はｓｐ3結合の割合が高いので、常温硬さと高温硬さが高くなる。 The amorphous carbon film of the present invention has high hardness comparable to diamond, and exhibits excellent wear resistance when used as a cutting tool. Since the amorphous carbon film of the present invention has a high sp 3 bond ratio, the room temperature hardness and the high temperature hardness are increased.
本発明の非晶質炭素被覆工具の用途として、具体的には、ドリル、エンドミル、スローアウェイチップなどの切削工具、金型を挙げることができる。 Specific examples of uses of the amorphous carbon-coated tool of the present invention include cutting tools such as drills, end mills, and throw-away tips, and dies.
本発明の非晶質炭素膜は、固体のカーボンを出発原料とした物理蒸着法により得られる。物理蒸着法として具体的には、アークイオンプレーティング法、レーザーアブレーション法、スパッタリング法などを挙げることができる。その中でも、非晶質炭素膜と基材との密着性が高く、得られる非晶質炭素膜の硬さが高いアークイオンプレーティング法がさらに好ましい。アークイオンプレーティング法は、他の方式よりもイオン化率が高いカーボンイオンが生成するため、ダイヤモンド類似のｓｐ3結合の比率が高く緻密で硬さの高い膜が得られ、耐摩耗性を大幅に向上させることができる。 The amorphous carbon film of the present invention can be obtained by physical vapor deposition using solid carbon as a starting material. Specific examples of physical vapor deposition include arc ion plating, laser ablation, and sputtering. Among these, the arc ion plating method in which the adhesion between the amorphous carbon film and the substrate is high and the hardness of the obtained amorphous carbon film is high is more preferable. The arc ion plating method produces carbon ions with a higher ionization rate than other methods, resulting in a dense and highly hard film with a high sp 3 bond ratio similar to diamond, greatly improving wear resistance. Can be improved.
アークイオンプレーティング法は、非晶質炭素膜の表面にマイクロパーティクルと呼ばれる突起物が生じやすい。マイクロパーティクルは耐摩耗性の低下や非晶質炭素膜の表面粗さを粗くし、被削材の表面品位を悪くする原因となる。アークイオンプレーティング法の中でも、マイクロパーティクルを低減させるフィルタードアークイオンプレティング法は、さらに好ましい。 In the arc ion plating method, protrusions called microparticles are easily generated on the surface of the amorphous carbon film. The microparticles cause a decrease in wear resistance and a rough surface of the amorphous carbon film, thereby deteriorating the surface quality of the work material. Among the arc ion plating methods, a filtered arc ion plating method that reduces microparticles is more preferable.
具体的な製造方法としては以下の方法を挙げることができる。工具形状の基材を成膜装置内に入れ、アルゴンプラズマにて基材の表面を洗浄する。次に、基材に−３０〜−３００Ｖの直流電圧または−３０〜−５００Ｖのパルス電圧の基材バイアス電圧をかけてＣ2Ｈ2およびＣＨ4の１種または２種を５〜２０ｃｍ3／ｍｉｎの範囲の所定流量で炉内へ導入し、アーク放電電流８０Ａの陰極アーク放電によりグラファイトのターゲットを蒸発およびイオン化させることにより非晶質炭素膜の内層部を被覆する。内層部の水素量に濃度勾配を持たせるためには、Ｃ2Ｈ2およびＣＨ4の１種または２種の流量を時間とともに減少させるとよい。非晶質炭素膜の内層膜の被覆終了後、Ｃ2Ｈ2およびＣＨ4の１種または２種を供給せずに非晶質炭素膜の外層部を被覆すると本発明の非晶質炭素被覆工具を得ることができる。 Specific examples of the manufacturing method include the following methods. A tool-shaped substrate is placed in a film forming apparatus, and the surface of the substrate is cleaned with argon plasma. Next, a substrate bias voltage of −30 to −300 V direct current voltage or −30 to −500 V pulse voltage is applied to the substrate so that one or two of C 2 H 2 and CH 4 are 5 to 20 cm 3 / The inner layer of the amorphous carbon film is coated by introducing into the furnace at a predetermined flow rate in the range of min and evaporating and ionizing the graphite target by cathodic arc discharge with an arc discharge current of 80A. In order to have a concentration gradient in the amount of hydrogen in the inner layer, it is preferable to reduce the flow rate of one or two of C 2 H 2 and CH 4 with time. When the outer layer portion of the amorphous carbon film is coated without supplying one or two of C 2 H 2 and CH 4 after the coating of the inner layer film of the amorphous carbon film is completed, the amorphous carbon coating of the present invention A tool can be obtained.
非晶質炭素膜の被覆時の基材温度は、５０〜２００℃であると好ましい。基材温度が２００℃を超えると、軟質なｓｐ2結合のグラファイトが析出しやすくなる。基材温度が５０℃未満であると、基材と非晶質炭素膜との密着性が低下する。そのため基材温度は５０〜２００℃であると好ましい。その中でも基材温度は５０〜１５０℃であるとさらに好ましい。非晶質炭素膜の被覆時にはカーボンイオンが基材表面に照射され、非晶質炭素膜が形成されるので基材温度は上昇する。従って基材を加熱ヒーターによって加熱しなくても基材温度が上昇する場合もある。 The substrate temperature during coating of the amorphous carbon film is preferably 50 to 200 ° C. When the substrate temperature exceeds 200 ° C., soft sp 2 -bonded graphite tends to precipitate. When the substrate temperature is less than 50 ° C., the adhesion between the substrate and the amorphous carbon film decreases. Therefore, the substrate temperature is preferably 50 to 200 ° C. Among these, the substrate temperature is more preferably 50 to 150 ° C. When the amorphous carbon film is coated, carbon ions are irradiated on the surface of the substrate, and an amorphous carbon film is formed, so that the substrate temperature rises. Therefore, the substrate temperature may rise without heating the substrate with a heater.
本発明の非晶質炭素被覆工具は、非晶質炭素膜と基材との密着性に優れるとともに耐摩耗性に優れる。本発明の非晶質炭素被覆工具は、高能率加工と工具寿命の長寿命化を実現し、被削材の仕上げ品位を良くすることが可能となる。 The amorphous carbon-coated tool of the present invention is excellent in the adhesion between the amorphous carbon film and the substrate, and is excellent in wear resistance. The amorphous carbon-coated tool of the present invention achieves high-efficiency machining and long tool life, and can improve the finish quality of the work material.
基材として、ドリル径φ０．３ｍｍ×長さ５．８ｍｍ（形状ＰＲＭ０３０Ｌ−Ｅ）のプリント回路基板加工用超硬合金製ドリルを用意した。この基材をアークイオンプレーティング装置の炉内に入れた。加熱ヒーターを用いて基材を３００℃まで加熱させながら、炉内を圧力１×１０-4Ｐａの真空にした。加熱ヒーターの設定温度を１００℃まで下げて基材温度を１５０℃まで低下させた後、アルゴンガスを導入し、圧力２×１０-1Ｐａのアルゴン雰囲気に保持しながら、バイアス電源により基材取付治具に−４００Ｖの基材バイアス電圧をかけてアルゴンプラズマにて基材表面を洗浄した。 As a base material, a drill made of cemented carbide for processing a printed circuit board having a drill diameter of 0.3 mm and a length of 5.8 mm (shape PRM030L-E) was prepared. This substrate was placed in a furnace of an arc ion plating apparatus. While heating the substrate to 300 ° C. using a heater, the inside of the furnace was evacuated to a pressure of 1 × 10 −4 Pa. After lowering the set temperature of the heater to 100 ° C and lowering the substrate temperature to 150 ° C, argon gas is introduced and the substrate is attached with a bias power source while maintaining an argon atmosphere at a pressure of 2 × 10 -1 Pa. A substrate bias voltage of −400 V was applied to the jig, and the substrate surface was cleaned with argon plasma.
次に、表１、２に示す条件にて基材の表面に非晶質炭素膜が形成した。表１は主にアークイオンプレーティング装置に関する条件を示し、表２は発明品５〜８の基材のバイアス電圧に用いるパルス電圧条件を示す。発明品１〜４については、基材のバイアス電圧に表１に示す直流電圧を用い、非晶質炭素膜の内層部の被覆開始時に５〜１５ｃｍ3／ｍｉｎの所定流量のＣ2Ｈ2を炉内に導入し、Ｃ2Ｈ2の流量を時間とともに徐々に減少させ、非晶質炭素膜の内層部の被覆終了時にはＣ2Ｈ2の流量が０ｃｍ3／ｍｉｎになるように調節して内層部を被覆した。非晶質炭素膜の外層部はＣ2Ｈ2を炉内に供給せずに被覆した。発明品５〜８については、基材のバイアス電圧に表２に示すパルス電圧を用い、非晶質炭素膜の内層部の被覆開始から被覆終了まで、一定流量のＣ2Ｈ2を供給して内層部を被覆した。非晶質炭素膜の外層部はＣ2Ｈ2を炉内に供給せずに被覆した。 Next, an amorphous carbon film was formed on the surface of the substrate under the conditions shown in Tables 1 and 2. Table 1 mainly shows the conditions regarding an arc ion plating apparatus, and Table 2 shows the pulse voltage conditions used for the bias voltage of the base material of invention products 5-8. For the inventive products 1 to 4, the DC voltage shown in Table 1 was used as the bias voltage of the base material, and C 2 H 2 at a predetermined flow rate of 5 to 15 cm 3 / min was applied at the start of coating the inner layer portion of the amorphous carbon film. It is introduced into the furnace, and the flow rate of C 2 H 2 is gradually decreased with time, and adjusted so that the flow rate of C 2 H 2 becomes 0 cm 3 / min at the end of coating the inner layer of the amorphous carbon film. The inner layer was covered. The outer layer portion of the amorphous carbon film was coated without supplying C 2 H 2 into the furnace. For invention products 5-8, the pulse voltage shown in Table 2 was used as the bias voltage of the substrate, and C 2 H 2 at a constant flow rate was supplied from the start of coating of the inner layer of the amorphous carbon film to the end of coating. The inner layer was covered. The outer layer portion of the amorphous carbon film was coated without supplying C 2 H 2 into the furnace.
比較品１は被覆を行わない超硬合金製ドリルである。比較品２、３は、超硬合金製ドリルの基材をプラズマＣＶＤ装置内に入れ、アノード電圧１００Ｖ、リフレクター電圧５０Ｖ、フィラメント電流３０Ａを共通条件とし、表３に示す条件で基材の表面に非晶質炭素膜を形成した。 Comparative product 1 is a cemented carbide drill without coating. In comparative products 2 and 3, a cemented carbide drill base material is placed in a plasma CVD apparatus, and the anode voltage is 100V, the reflector voltage is 50V, and the filament current is 30A. An amorphous carbon film was formed.
得られた発明品１〜８、比較品２、３について、高エネルギー重イオン（ヘリウムイオン）を入射粒子として用いた弾性反跳粒子検出法（ＥＲＤＡ）を使用して非晶質炭素膜の深さ方向の水素濃度分布を測定した。また、非晶質炭素膜の断面観察から走査型電子顕微鏡を用いて非晶質炭素膜の最大膜厚を測定した。それらの結果は表４に示した。 Using the elastic recoil particle detection method (ERDA) using high energy heavy ions (helium ions) as incident particles for the obtained inventive products 1 to 8 and comparative products 2 and 3, the depth of the amorphous carbon film The hydrogen concentration distribution in the vertical direction was measured. The maximum film thickness of the amorphous carbon film was measured using a scanning electron microscope from the cross-sectional observation of the amorphous carbon film. The results are shown in Table 4.
表４に示すように外層部には水素が微量に含まれるが、これは、炉内に残った水分などから混入したものと思われる。次にHysitron社製TriboIndentorを使用し、荷重１ｍＮで非晶質炭素膜の硬さと弾性復元率を測定した。基材のＷＣに存在する圧縮応力を下記の応力測定条件で測定した。これらの結果は表５に示した。 As shown in Table 4, the outer layer portion contains a small amount of hydrogen, which is considered to be mixed from moisture remaining in the furnace. Next, using a TriboIndentor manufactured by Hysitron, the hardness and elastic recovery rate of the amorphous carbon film were measured at a load of 1 mN. The compressive stress existing in the WC of the substrate was measured under the following stress measurement conditions. These results are shown in Table 5.
［応力測定条件］
測定装置：株式会社リガク製微小部応力測定装置
Ｘ線管球：Ｃｕターゲット
コリメータ：φ２ｍｍ
Ｘ線出力：３０ｋＶ，２０ｍＡ
標準ブラック角２θ0：１１７度（ＷＣ（２１１）面）
ψ：０度、１７度、２４度、３０度、３５度、４０度の６点測定
ポアッソン比υ：０．１９
ヤング率Ｅ：７００ＧＰａ
[Stress measurement conditions]
Measuring device: Micro-part stress measuring device manufactured by Rigaku Corporation X-ray tube: Cu target collimator: φ2 mm
X-ray output: 30 kV, 20 mA
Standard black angle 2θ 0 : 117 degrees (WC (211) surface)
ψ: 6 point measurement Poisson's ratio of 0 °, 17 °, 24 °, 30 °, 35 °, 40 ° υ: 0.19
Young's modulus E: 700 GPa
５１４．５ｎｍの波長を持つアルゴンガスレーザーのラマン分光測定装置を用いて、発明品１〜８と比較品２，３の非晶質炭素膜のラマンスペクトルを測定した。これらの結果は表６に示した。 The Raman spectra of the amorphous carbon films of Inventions 1 to 8 and Comparative Products 2 and 3 were measured using an argon gas laser Raman spectrometer having a wavelength of 514.5 nm. These results are shown in Table 6.
得られたドリルについて、穴あけ試験を行い、切刃における凝着状況と摩耗状態を測定した。これらの結果は表７に示した。 About the obtained drill, the drilling test was done and the adhesion state and abrasion state in a cutting blade were measured. These results are shown in Table 7.
［穴あけ試験］
ドリル径：φ０．３ｍｍ
被削材：プリント回路基板ＦＲ−４（４層板）×２枚重ね
回転数：１２００００回転／ｍｉｎ、
テーブル送り速度：３．０ｍ／ｍｉｎ
１回転当たりの送り量：２５μｍ／ｒｅｖ
加工数：３０００穴を加工する。
[Drilling test]
Drill diameter: φ0.3mm
Work material: Printed circuit board FR-4 (4-layer board) x 2 sheets Overlap rotation speed: 120,000 rotations / min,
Table feed speed: 3.0 m / min
Feed per rotation: 25 μm / rev
Number of machining: 3000 holes are machined.
本発明品は、比較品に比べて、優れた耐溶着性と耐摩耗性を備えることがわかる。従って、穴あけ加工後の穴加工精度も非常に高く、長寿命化が可能になる。 It can be seen that the product of the present invention has superior welding resistance and wear resistance compared to the comparative product. Therefore, the drilling accuracy after drilling is very high, and the service life can be extended.
基材として、フライス用スローアウェイチップ（Ｋ１０相当超硬合金、形番ＡＥＣＷ１６Ｔ３ＰＥＦＲ）を用意した。この基材をアークイオンプレーティング装置の炉内に入れた。加熱ヒーターを用いて基材を３００℃まで加熱させながら炉内を圧力１×１０-4Ｐａの真空にした。加熱ヒーターの設定温度を１００℃まで下げて基材温度を１５０℃まで低下させた後、アルゴンガスを導入し、圧力２×１０-1Ｐａのアルゴン雰囲気に保持しながら、バイアス電源により基材取付治具に−４００Ｖの基材バイアス電圧をかけてアルゴンプラズマにて基材の表面を洗浄した。 As a base material, a throw-away tip for milling (K10 equivalent cemented carbide, model number AECW16T3PEFR) was prepared. This substrate was placed in a furnace of an arc ion plating apparatus. The furnace was evacuated to a pressure of 1 × 10 −4 Pa while heating the substrate to 300 ° C. using a heater. After lowering the set temperature of the heater to 100 ° C and lowering the substrate temperature to 150 ° C, argon gas is introduced and the substrate is attached with a bias power source while maintaining an argon atmosphere at a pressure of 2 × 10 -1 Pa. A substrate bias voltage of −400 V was applied to the jig, and the surface of the substrate was cleaned with argon plasma.
次に、表８、９に示す条件にて基材の表面に非晶質炭素膜が形成した。表８は主にアークイオンプレーティング装置に関する条件を示し、表９は基材のバイアス電圧に用いるパルス電圧条件を示す。発明品９〜１２については、非晶質炭素膜の内層部の被覆開始時に６〜１２ｃｍ3／ｍｉｎの所定流量のＣ2Ｈ2を炉内に導入し、Ｃ2Ｈ2の流量を時間とともに徐々に減少させ、非晶質炭素膜の内層部の被覆終了時にはＣ2Ｈ2の流量が０ｃｍ3／ｍｉｎになるように調節して内層部を被覆した。非晶質炭素膜の外層部はＣ2Ｈ2を炉内に供給せずに被覆した。発明品１３〜１６については、非晶質炭素膜の内層部の被覆開始から被覆終了まで、一定流量のＣ2Ｈ2を供給して内層部を被覆した。非晶質炭素膜の外層部はＣ2Ｈ2を炉内に供給せずに被覆した。 Next, an amorphous carbon film was formed on the surface of the substrate under the conditions shown in Tables 8 and 9. Table 8 mainly shows conditions relating to the arc ion plating apparatus, and Table 9 shows pulse voltage conditions used for the bias voltage of the substrate. For inventions 9-12 at coating start of the inner layer portion of the amorphous carbon layer by introducing 6~12cm 3 / min at a predetermined flow rate C 2 H 2 in the furnace, over time the flow rate of C 2 H 2 The inner layer portion was coated by adjusting the flow rate of C 2 H 2 to 0 cm 3 / min when the coating of the inner layer portion of the amorphous carbon film was completed. The outer layer portion of the amorphous carbon film was coated without supplying C 2 H 2 into the furnace. Inventive products 13 to 16 were coated with a constant flow rate of C 2 H 2 from the start of coating of the inner layer portion of the amorphous carbon film to the end of coating, thereby covering the inner layer portion. The outer layer portion of the amorphous carbon film was coated without supplying C 2 H 2 into the furnace.
比較品４は被覆を行わない超硬合金製スローアウェイチップである。比較品５は、基材をプラズマＣＶＤ成膜装置の炉内に入れ、ベンゼンＣ6Ｈ6の流量１０ｃｍ3／ｍｉｎ、圧力４．３×１０-1Ｐａ、基材温度２００℃、基材のバイアス電圧−１５００Ｖ（直流電圧）という条件で基材の表面に非晶質炭素膜を形成した。 Comparative product 4 is a cemented carbide throwaway tip that is not coated. In Comparative Product 5, the base material was put in a furnace of a plasma CVD film forming apparatus, the flow rate of benzene C 6 H 6 was 10 cm 3 / min, the pressure was 4.3 × 10 −1 Pa, the base material temperature was 200 ° C., An amorphous carbon film was formed on the surface of the substrate under the condition of a bias voltage of −1500 V (DC voltage).
得られた発明品９〜１６、比較品５について、高エネルギー重イオン（ヘリウムイオン）を入射粒子として用いた弾性反跳粒子検出法（ＥＲＤＡ）を使用して非晶質炭素膜の深さ方向の水素濃度分布を測定した。また、非晶質炭素膜の断面観察から走査型電子顕微鏡を用いて非晶質炭素膜の最大膜厚を測定した。それらの結果は表１０に示した。 About the obtained invention products 9-16 and the comparative product 5, the depth direction of an amorphous carbon film using the elastic recoil particle detection method (ERDA) which used high energy heavy ions (helium ions) as incident particles The hydrogen concentration distribution was measured. The maximum film thickness of the amorphous carbon film was measured using a scanning electron microscope from the cross-sectional observation of the amorphous carbon film. The results are shown in Table 10.
表１０に示すように外層部には微量の水素が含まれるが、これは、炉内に残った水分などから混入したものと思われる。Hysitron社製TriboIndentorを使用し、実施例１と同様な条件で非晶質炭素膜の硬さと弾性復元率を測定した。基材のＷＣに存在する圧縮応力を実施例１と同様な条件で測定した。これらの結果は表１１に示した。 As shown in Table 10, the outer layer portion contains a small amount of hydrogen, which seems to be mixed from moisture remaining in the furnace. Using a TriboIndentor manufactured by Hysitron, the hardness and elastic recovery of the amorphous carbon film were measured under the same conditions as in Example 1. The compressive stress existing in the WC of the substrate was measured under the same conditions as in Example 1. These results are shown in Table 11.
５１４．５ｎｍの波長を持つアルゴンガスレーザーのラマン分光測定装置を用いて、発明品９〜１６と比較品５の非晶質炭素膜のラマンスペクトルを測定した。これらの結果は表１２に示した。 The Raman spectra of the amorphous carbon films of Inventions 9 to 16 and Comparative Product 5 were measured using an argon gas laser Raman spectrometer having a wavelength of 514.5 nm. These results are shown in Table 12.
得られたスローアウェイチップについて、フライス加工試験を行い、切刃における凝着状況と摩耗状態を測定した。 これらの結果は表１３に示した。 The resulting throw-away tip was subjected to a milling test to measure the adhesion state and wear state of the cutting edge. These results are shown in Table 13.
［フライス加工試験］
被削材：アルミニウム合金ＡＤＣ１２
チップ形状：ＡＥＣＷ１６Ｔ３ＰＥＦＲ
切削速度：Ｖ＝３００ｍ／ｍｉｎ
切り込み：Ａｄ＝５ｍｍ
送り：ｆ＝０．１５ｍｍ／ｒｅｖ
ダウンカット
[Milling test]
Work material: Aluminum alloy ADC12
Chip shape: AECW16T3PEFR
Cutting speed: V = 300 m / min
Cutting depth: Ad = 5mm
Feed: f = 0.15mm / rev
Down cut
発明品は、比較品に比べて、被膜と基材との密着性に優れ、優れた耐溶着性と耐摩耗性を備えることがわかる。そのため長寿命化が可能になる。 It can be seen that the inventive product is superior in adhesion between the coating film and the base material and has excellent welding resistance and wear resistance as compared with the comparative product. Therefore, it is possible to extend the life.
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