JP2009188334A - Plasma treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of showing high treatment performance and reducing an amount of a treatment gas to be used. <P>SOLUTION: The plasma treatment apparatus includes a box having a carry-in port and a carry-out port for a substrate to be treated, a plasma treatment part formed in the box and generating plasma to treat the substrate to be treated, a carry-in passage connecting the carry-in port and the plasma treatment part, a carry-out passage connecting the plasma treatment part and the carry-out port, a transport part for transporting the substrate to be treated through the carry-in passage and the carry-out passage, a suction part having a suction port exposed at least to the carry-in passage and the carry-out passage to suck gas from the plasma treatment part, a plurality of pairs of counter electrodes provided to the plasma treatment part and arranged in the direction of transporting the substrate to be treated, a treatment gas blowing part formed at the plasma treatment part and supplying the treatment gas between the counter electrodes, and a setting part for setting the amount of the treatment gas supplied from the treatment gas blowing part. The setting part sets the supply amount of the treatment gas so as to be smaller for the treatment gas blowing part closer to the suction port. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus that performs processing such as reforming, cleaning, processing, and thin film formation under normal pressure, that is, a pressure near atmospheric pressure.

  A housing for storing a plasma processing unit having a pair of electrodes and a processing gas supply means is provided, gas is supplied to the housing, and a curtain shape is provided near the substrate inlet and outlet in the housing. There is known an apparatus that prevents the outflow of processing gas from the casing and the inflow of outside air into the casing by providing a gas curtain member that ejects gas to the casing and reduces the amount of processing gas used (for example, patents) Reference 1).

JP 2006-140051

In the atmospheric pressure plasma processing apparatus provided with such a gas curtain member, a pair of electrodes is provided, and a processing gas is supplied from the vicinity of the electrodes. A gas curtain member is provided in the vicinity of the inlet and outlet for the substrate to be processed. For this reason, inflow of outside air can be prevented, outflow of processing gas can be prevented, and the amount of processing gas used can be reduced.
However, since the electrodes are a pair, there is a problem that the processing capability is low.
In addition, when a plurality of pairs of electrodes are used, stagnation of the processing gas occurs between the electrode pairs, so that the processing gas supplied from the vicinity of each electrode cannot form a uniform flow. For this reason, the process gas which does not contribute to the production | generation of plasma generate | occur | produces and there existed a problem that the usage-amount of process gas increased.

  The present invention has been made in view of such circumstances, and provides a plasma processing apparatus that can have a high processing capacity and can reduce the amount of processing gas used.

  The present invention includes a housing having a carry-in port and a carry-out port for a substrate to be processed, a plasma processing unit that is provided in the housing and generates plasma and processes the substrate to be treated, and the carry-in port and the plasma treatment A carry-in path that connects the processing section, a carry-out path that connects the plasma processing section and the carry-out port, a conveyance section that conveys the substrate to be processed through the carry-in path and the carry-out path, and the carry-in path and the carry-out path A suction unit that exposes a suction port to at least one of the paths and sucks a gas from the plasma processing unit; a plurality of pairs of counter electrodes that are provided in the plasma processing unit and are arranged along the transport direction of the substrate to be processed; and plasma A processing gas blowing unit that is provided in the processing unit and supplies a processing gas between the counter electrodes; and a setting unit that sets a processing gas supply amount of the processing gas blowing unit, the setting unit being a processing gas close to the suction port The balloon part There is provided a plasma processing apparatus for setting the processing gas supply amount so physical gas supply amount is reduced.

According to the plasma processing apparatus of the present invention, the suction port is exposed in at least one of the carry-in path and the carry-out path and the gas is sucked from the plasma processing section, and the plasma processing section is provided in the transport direction of the substrate to be processed. A plurality of pairs of counter electrodes arranged along with each other, a processing gas blowing unit provided in the plasma processing unit for supplying a processing gas between the counter electrodes, and a setting unit for setting a processing gas supply amount of the processing gas blowing unit It is done. Therefore, since the gas flow in the plasma processing section flows uniformly along the electrode arrangement direction without causing stagnation, a processing gas that does not contribute to plasma generation between one electrode is used between the other electrodes. can do. Further, since the setting unit sets the processing gas supply amount so that the processing gas supply amount becomes smaller as the processing gas blowing unit is closer to the suction port, it is possible to reduce the processing gas usage amount.
In addition, since a plurality of pairs of counter electrodes are provided, it is possible to provide a high processing capability.

  The plasma processing apparatus according to the present invention includes a housing having a substrate inlet and a carrier outlet for processing a substrate, a plasma processing section that is provided in the housing and generates plasma and processes the substrate to be processed, and the carry-in A carry-in path that connects the mouth and the plasma processing unit, a carry-out path that connects the plasma process unit and the carry-out port, a conveyance unit that conveys the substrate to be processed through the carry-in path and the carry-out path, and A suction part that exposes a suction port in at least one of the carry-in path and the carry-out path and sucks gas from the plasma processing part, and a plurality of pairs facing each other provided in the plasma processing part and arranged in the transport direction of the substrate to be treated An electrode, a processing gas blowing unit provided in the plasma processing unit for supplying a processing gas between the counter electrodes, and a setting unit for setting a processing gas supply amount of the processing gas blowing unit, wherein the setting unit includes the suction port Close to And sets the processing gas supply amount so that the amount of process gas supply as physical gas blowout unit is reduced.

  In the plasma processing apparatus according to the present invention, examples of the substrate to be processed include glass, polyimide film, and the like in which processing such as modification, cleaning, processing, and film formation is performed.

  The housing may be composed of an upper housing and a lower housing. As a specific example, a metal housing formed of aluminum, stainless steel, or the like can be given.

  The plasma processing unit is preferably provided near the center inside the housing, but may be provided anywhere in the housing.

  The carry-in path and the carry-out path are preferably straight lines, but may be curved or may have a gradient.

  The conveyance unit is configured to carry the substrate to be processed from the carry-in port through the carry-in path to the plasma treatment unit, and from the plasma process unit through the carry-out path to the carry-out port. Specific examples of the conveying unit include a roller (roller) driven by a driving source such as a motor, and a conveyor using a material excellent in plasma resistance for a belt.

The suction part may have a nozzle-like suction port, and may have a structure for exhausting the gas sucked from the suction port to the outside of the housing.
Here, the gas includes a processing gas and a gas generated by the processing.

The plurality of pairs of counter electrodes are each formed of a conductor. Specific examples include those formed of copper, brass or aluminum.
The electrode is preferably subjected to a surface treatment such as alumite treatment so that the surface is not attacked by a treatment gas, active species generated in plasma, or a product after reaction. Alternatively, it may be covered with a solid dielectric. By doing in this way, the damage by the discharge of an electrode can be prevented.

The processing gas is not particularly limited as long as the gas type and mixing ratio are changed depending on the purpose of the processing. As the processing gas, for example, a rare gas such as He or Ar, a gas containing a halogen such as a fluorine compound or a chlorine compound, or a gas such as oxygen or nitrogen can be appropriately selected.
For example, He and Ar can be mainly used for excitation of active species during plasma generation, fluorine compounds and chlorine compounds for etching, and oxygen for ashing.

  The setting unit is not particularly limited as long as the supply amount of the processing gas can be adjusted. For example, the setting unit may be a float type flow meter. The supply amount of the processing gas can be adjusted by, for example, a needle valve, a gate valve, a butterfly valve, or the like.

  In the plasma processing apparatus according to the present invention, the suction port may be exposed to the carry-in path or the carry-out path.

In the plasma processing apparatus according to the present invention, it is preferable that the suction port is exposed to the carry-in path and the carry-out path.
According to such a configuration, since the suction part is exposed in the carry-in path and the carry-out path, it is possible to prevent the inflow of outside air and the outflow of the processing gas and the gas generated in the processing process. Therefore, the amount of processing gas used can be reduced, and contamination of the surrounding environment can be prevented.

In the plasma processing apparatus according to the present invention, the housing preferably includes a gas blowing portion in the vicinity of at least one of the carry-in port and the carry-out port.
The gas blowing part may have a nozzle-like blowing port and a structure for blowing gas from the blowing port.

  The plasma processing apparatus according to the present invention may further include an auxiliary suction portion having an auxiliary suction port, and the auxiliary suction port may be provided in the vicinity of at least one of the carry-in port and the carry-out port.

Hereinafter, the present invention will be described in more detail with reference to embodiments shown in the drawings. The present invention is not limited to this, and various modifications are possible. In addition, the same code | symbol is attached | subjected and demonstrated to a common member.
Embodiment 1
FIG. 1 is an explanatory diagram of the configuration of Embodiment 1 of the present invention. FIG. 2 is a side view of the main part of FIG. FIG. 3 is a cross-sectional view of a main part of FIG. FIG. 4 is a plan view of the main part of FIG.

<Configuration of plasma processing equipment>
As shown in FIG. 1, the plasma processing apparatus 100 includes a casing 1, gas supply units 20a and 20b, and a plasma generating high-frequency power source 40.

  The casing 1 includes an upper casing 1a and a lower casing 1b, each of which is made of aluminum and has an anodized surface.

The upper housing 1a is provided with an upper wall 1p. Side walls 1c and 1d are provided downward at both ends of the upper wall 1p, and side walls 1e and 1f (FIG. 2) are provided downward. That is, downward side walls 1c to 1f are formed around the upper wall 1p.
Further, the upper casing 1a is provided with partition plates 1r and 1s that partition the internal space in parallel with the side walls 1c and 1d.

Similarly, the lower housing 1b is provided with a lower wall 1q in parallel with the upper wall 1p, side walls 1g and 1h are provided upward at both ends of the lower wall 1q, and side walls 1i and 1j (FIG. 2). Is provided upwards. That is, side walls 1g to 1j are formed around the lower wall 1q.
The lower casing 1b is provided with partition plates 1t and 1u that divide the internal space in parallel with the side walls 1g and 1h.

The upper housing 1a and the lower housing 1b have covers 15a and 15b facing each other as shown in FIGS.
The covers 15a and 15b are made of aluminum and the surface thereof is anodized.
Further, as shown in FIG. 2, the upper casing 1a and the lower casing 1b are arranged so as to face each other with a predetermined interval therebetween by spacers 80a and 80b. The spacers 80a and 80b extend from the side walls 1c and 1g in FIG. 1 to the side walls 1d and 1h.

  Further, the upper housing 1a and the lower housing 1b form a carry-in port 3 for carrying the substrate 2 in the direction of arrow A between the side wall 1c and the side wall 1g. On the other hand, a carry-out port 4 for carrying out the substrate 2 is formed between the side wall 1d and the side wall 1h.

A plasma processing unit 5 for processing the substrate 2 is provided in the vicinity of the central portion inside the housing 1.
The plasma processing unit 5 is provided with the electrode units 10a to 14a facing downward so as to be partially exposed from the cover 15a.
On the other hand, the plasma processing unit 5 is provided with the electrode units 10b to 14b facing upward so as to be partially exposed from the cover 15b.

  Further, the five pairs of electrode units (10a, 10b), (11a, 11b), (12a, 12b), (13a, 13b), (14a, 14b) face each other.

  A carry-in path 6 that connects the carry-in port 3 and the plasma processing unit 5 and a carry-out path 7 that connects the plasma process unit 5 and the carry-out port 4 are formed between the cover 15a and the cover 15b.

  Then, in the lower housing 1b, the transfer unit 8 carries the substrate 2 from the carry-in port 3 through the carry-in path 6 to the plasma processing unit 5, and from the plasma process unit 5 through the carry-out path 7 to the carry-out port 4. Is provided. The transport unit 8 is partially exposed from the cover 15b, and a roller driven by a drive source such as a motor (not shown) is used for this.

  Each of the electrode units 10a to 14a and 10b to 14b includes a main electrode 70, a side electrode 72, and a gas supply member 73, as shown in FIG. The main electrode 70 is covered with a solid dielectric 71, the solid dielectric 71 and the side electrode 72 are fixed by screws (not shown), and the side electrode 72 and the gas supply member 73 are fixed by screws (not shown).

  A processing gas reservoir 77 for storing a processing gas is provided between the solid dielectric 71 and the gas supply member 73. Further, the processing gas is supplied through the processing gas blowing parts 74a and 74b.

  Further, the gas supply member 73 is provided with a processing gas introduction port 75 for introducing the processing gas into the processing gas reservoir 77. The processing gas introduction port 75 and a processing gas line 34a (34b) to be described later are connected by a coupling member 76.

Further, as shown in FIG. 1, in the partition plates 1s and 1u, a pair of suction portions 9a and 9b are provided so as to face each other.
The suction part 9a has a nozzle-like suction port at the bottom, and has a structure for exhausting the gas sucked from the suction port from the top to the outside of the housing 1.
On the other hand, the suction part 9b has a nozzle-like suction port at the top, and has a structure for exhausting the gas sucked from the suction port to the outside of the housing 1 from the bottom.

As shown in FIG. 4, the cover 15b includes electrode unit through holes 50 to 54 for exposing part of the electrode units 10b to 14b of the lower housing 1b (FIG. 1) from the cover 15b.
The cover 15b includes a suction part through hole 55 for exposing the suction port of the suction part 9b (FIG. 1) of the lower housing 1b (FIG. 1) from the cover 15b.
The electrode unit through holes 50 to 54 and the suction part through hole 55 extend in a direction perpendicular to the transport direction (arrow A) of the substrate 2 (FIG. 1).

  Further, the cover 15b includes a transport part through hole 60 for exposing a part of the transport part 8 (FIG. 1) from the cover 15b. The transport part through hole 60 is provided in parallel to the transport direction (arrow A) of the substrate 2 (FIG. 1).

  Similarly, the cover 15a is also provided with through holes for exposing the electrode units 10a to 14a of the upper housing 1a and the suction port of the suction part 9a.

Further, the shape of the suction port of the suction portions 9a, 9b is a rectangle, and this rectangle has a long side in a direction orthogonal to the transport direction (arrow A) of the substrate 2, and the long side is a side wall 1e ( 2) to the side wall 1f.
The suction units 9a and 9b (FIG. 1) are connected to a suction pump (not shown).

In the gas supply unit 20a, the processing gas lines 31a to 33a are connected to the mixing chambers 21a to 25a.
The mixing chambers 21a to 25a are connected to the electrode units 10a to 14a of the upper housing 1a via setting units 35a to 39a for setting the supply amount of the processing gas, respectively.

Further, in the gas supply unit 20b, the processing gas lines 31b to 33b are connected to the mixing chambers 21b to 25b.
The mixing chambers 21b to 25b are connected to the electrode units 10b to 14b of the lower housing 1b via setting units 35b to 39b for setting the supply amount of the processing gas, respectively.

  Furthermore, a power source 40 is electrically connected to the electrode units 10a to 14a and the electrode units 10b to 14b.

<Treatment method using plasma treatment equipment>
First, gases such as He, N ₂ and O ₂ are supplied from the processing gas lines 31a, 31b, 32a, 32b, 33a and 33b to the respective gas lines. A gas pressure is adjusted by a pressure reducing valve and a filter (not shown), and organic matter and moisture in the gas are adsorbed to increase the purity of the gas. These gases are collected and mixed in the mixing chambers 21a to 25a and 21b to 25b. This mixed gas is used as a processing gas.

  The processing gas flows from the mixing chambers 21a to 25a through the processing gas line 34a, is adjusted to a desired flow rate by the setting units 35a to 39a, and is supplied to the electrode units 10a to 14a of the upper housing 1a.

  Similarly, the processing gas flows from the mixing chambers 21b to 25b through the processing gas line 34b, is adjusted to a desired flow rate by the setting units 35b to 39b, and is supplied to the electrode units 10b to 14b of the lower housing 1b.

In the electrode units 10a to 14a and 10b to 14b, the processing gas is introduced into the processing gas reservoir 77 through the processing gas inlet 75 as shown in FIG. Then, the processing gas is introduced into the space between the upper casing 1a (FIG. 1) and the lower casing 1b (FIG. 1) through the processing gas supply parts 74a and 74b.
The processing gas reservoir 77 can provide a uniform processing gas flow along the width of the substrate 2.

Here, the suction unit 9a, a gas suction amount by 9b is Q _0. And five pairs of electrode units (10a, 10b), (11a, 11b), (12a, 12b), (13a, 13b),
The processing gas flow rates supplied by (14a, 14b) are Q ₁ , Q ₂ , Q ₃ , Q ₄ , and Q ₅ , respectively.

Then, the following equation is adjusted so that the gas suction amount and the processing gas flow rate are balanced.
Q ₀ ≤Q ₁ + Q ₂ + Q ₃ + Q ₄ + Q ₅ ... (1)

Furthermore, adjustment is performed as follows so that the flow rate of the processing gas decreases as the electrode units 10a to 14a and 10b to 14b are closer to the suction ports of the suction portions 9a and 9b.
Q ₁ ≧ Q ₂ ≧ Q ₃ ≧ Q ₄ ≧ Q ₅ ... (2)

Next, when the processing gas is introduced into the space between the upper casing 1a and the lower casing 1b, a high frequency voltage is applied between the electrode units 10a to 14a and the electrode units 10b to 14b by the power source 40. . Thereby, discharge is generated between the electrode units 10a to 14a (FIG. 1) and the electrode units 10b to 14b, and plasma is generated. Next, the transport unit 8 is driven, and the substrate 2 is carried into the plasma processing unit 5 from the carry-in port 3 through the carry-in path 6 to perform plasma processing. At the time of processing, the substrate 2 is transported in the direction of arrow A.
The substrate 2 is a large substrate having a side of 1 m or more.

  Between the electrode unit 10a (FIG. 1) and the electrode unit 10b, the processing gas that has not contributed to the generation of plasma is sucked in the transport direction (arrow A) of the substrate 2 by the suction portions 9a and 9b. That is, the processing gas is sucked in the arrangement direction of the electrode units 10a to 14a and 10b to 14b, and is mixed with the processing gas supplied from the electrode units 11a and 11b, thereby contributing to the generation of plasma.

Next, in the electrode unit 11a and the electrode unit 11b, the processing gas that has not contributed to the generation of plasma is sucked in the transport direction (arrow A) of the substrate 2 by the suction portions 9a and 9b. The processing gas is mixed with the processing gas supplied from the electrode unit 12a and the electrode unit 12b. Next, this processing gas contributes to the generation of plasma in the electrode unit 12a and the electrode unit 12b.
Thereafter, the same is sequentially repeated up to the electrode units 14a and 14b.
Then, the processing gas sucked by the suction parts 9a and 9b is discharged out of the casing.

  Thus, five pairs of electrode units (10a, 10b), (11a, 11b), (12a, 12b), (13a, 13b), (14a, 14b) are provided along the transport direction of the substrate 2. Therefore, it can process with high processing capacity.

Since the gas flow in the plasma processing unit 5 flows along the arrangement direction of the electrode units, the processing gas flows uniformly without causing stagnation. Therefore, the processing gas that does not contribute to the generation of plasma between the electrode units remote from the suction ports of the suction units 9a and 9b can be used for the generation of plasma between the electrode units near the suction ports of the suction units 9a and 9b.
Thereby, the setting units 35a to 39a and 35b to 39b can set the supply amounts so that the electrode units closer to the suction units 9a and 9b have a smaller process gas supply amount. Therefore, the amount of processing gas used can be reduced.

Embodiment 2.
FIG. 5 is a diagram corresponding to FIG. 1 when a gas blowing portion is added in the vicinity of the carry-in port in the first embodiment.

  As shown in FIG. 5, gas blowing portions 90a and 90b are added to the side walls 1c and 1g in the plasma processing apparatus 101. Other configurations are the same as those of the plasma processing apparatus 100 (FIG. 1).

The gas blowing portions 90a and 90b are respectively connected to gas lines (not shown).
The gas blowing portion 90a has a blowing opening opened downward, and the gas blowing portion 90b has a blowing opening opened upward.
They are adapted to blow out gas in opposition to each other.

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 3.
FIG. 6 is a diagram corresponding to FIG. 1 when a gas blowing portion is added in the vicinity of the carry-out port in the first embodiment.

  As shown in FIG. 6, gas blowing portions 90c and 90d are added to the side walls 1d and 1h of the plasma processing apparatus 102. Other configurations are the same as those of the plasma processing apparatus 100 (FIG. 1).

The gas blowing portions 90c and 90d are respectively connected to gas lines (not shown).
The gas blowing portion 90c has a blowing opening opened downward, and the gas blowing portion 90d has a blowing opening opened upward. They are adapted to blow out gas in opposition to each other.

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 4.
FIG. 7 is a diagram corresponding to FIG. 6 when a gas blowing portion is added in the vicinity of the carry-in port in the third embodiment.

  As shown in FIG. 7, gas blowing portions 90 a and 90 b are added to the side walls 1 c and 1 g in the plasma processing apparatus 103. Other configurations are the same as those of the plasma processing apparatus 102 (FIG. 6).

  The gas blowing section 90a has a blowing opening opened downward, and the gas blowing section 90b has a blowing opening opened upward. They are adapted to blow out gas in opposition to each other.

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 5.
FIG. 8 is a diagram corresponding to FIG. 1 when a suction unit is added in the vicinity of the carry-in path in the first embodiment.

  As shown in FIG. 8, in the plasma processing apparatus 104, suction portions 9c and 9d are added to the partition plates 1r and 1t. The suction portions 9c and 9d have the same structure as the suction portions 9a and 9b. Other configurations are the same as those of the plasma processing apparatus 100 (FIG. 1).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Here, the suction unit 9c, the gas suction amount according 9d is Q _6.
Then, the following adjustment is made so that Q ₀ in Equation (1) becomes Q ₀ + Q ₆ so that the gas suction amount and the processing gas flow rate are balanced.
Q ₀ + Q ₆ ≤Q ₁ + Q ₂ + Q ₃ + Q ₄ + Q ₅ ... (3)

Furthermore, adjustment is performed as follows so that the flow rate of the processing gas decreases as the electrode units 10a to 14a and 10b to 14b are closer to the suction ports of the suction units 9a and 9b and the suction ports of the suction units 9c and 9d.
_{Q 1 ≦ Q 2 ≦ Q 3} /2, Q 3/2 ≧ Q 4 ≧ Q 5 ··· (4)

  Further, between the electrode unit 12a and the electrode unit 12b, a part of the processing gas that did not contribute to the generation of plasma is sucked in the transport direction (arrow A) of the substrate 2 (FIG. 1) by the suction parts 9a and 9b. The That is, the processing gas is sucked in the arrangement direction of the electrode units 10a to 14a and 10b to 14b, and is mixed with the processing gas supplied from the electrode units 13a and 13b, thereby contributing to the generation of plasma.

  Next, in the electrode unit 13a and the electrode unit 13b, the processing gas that has not contributed to the generation of plasma is sucked in the transport direction (arrow A) of the substrate 2 (FIG. 1) by the suction portions 9a and 9b. The processing gas is mixed with the processing gas supplied from the electrode unit 14a and the electrode unit 14b. Next, this processing gas contributes to the generation of plasma in the electrode unit 14a and the electrode unit 14b.

On the other hand, between the electrode unit 12a and the electrode unit 12b, part of the processing gas that has not contributed to the generation of plasma is in the direction opposite to the transport direction (arrow A) of the substrate 2 (FIG. 1) by the suction portions 9c and 9d. Sucked into.
This processing gas is sucked in the arrangement direction of the electrode units 10a to 14a and 10b to 14b, and is mixed with the processing gas supplied from the electrode units 11a and 11b, thereby contributing to the generation of plasma.

  Next, in the electrode unit 11a and the electrode unit 11b, the processing gas that has not contributed to the generation of plasma is sucked in the direction opposite to the transport direction (arrow A) of the substrate 2 (FIG. 1) by the suction portions 9c and 9d. . The processing gas is mixed with the processing gas supplied from the electrode unit 10a and the electrode unit 10b. Next, this processing gas contributes to the generation of plasma in the electrode unit 10a and the electrode unit 10b.

As described above, when the suction units 9c and 9d are added, the processing gas is divided into two directions from the electrode units 12a and 12b, flows in the transport direction of the substrate 2 and in the opposite direction, and does not stagnate. Therefore, the processing gas that does not contribute to the generation of plasma between the electrode units remote from the suction ports of the suction units 9a to 9d can be used for plasma generation between the electrode units close to those suction ports.
Accordingly, the setting units 35a to 39a and 35b to 39b (FIG. 1) can set the supply amounts so that the electrode amounts closer to the suction ports of the suction units 9a to 9d are smaller. Thereby, the amount of processing gas used can be reduced.

Embodiment 6
FIG. 9 is a diagram corresponding to FIG. 1 when an auxiliary suction unit is added in the vicinity of the carry-out port in the first embodiment.

  As shown in FIG. 9, auxiliary suction parts 95c and 95d are added to the side walls 1d and 1h in the plasma processing apparatus 105. Other configurations are the same as those of the plasma processing apparatus 100 (FIG. 1).

The auxiliary suction part 95c has the same structure as the suction part 9a, has a nozzle-like suction port at the bottom, and has a structure for exhausting the gas sucked from the suction port to the outside of the housing 1 from the top. ing.
On the other hand, the auxiliary suction part 95d has the same structure as the suction part 9b, has a nozzle-like suction port at the top, and exhausts the gas sucked from the suction port from the bottom to the outside of the housing 1 (FIG. 9). It has a structure.

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 7.
FIG. 10 is a diagram corresponding to FIG. 9 when an auxiliary suction unit is added in the vicinity of the carry-in port in the sixth embodiment.

As shown in FIG. 10, the plasma processing apparatus 106 has auxiliary suction portions 95a and 95b added to the side walls 1c and 1g.
Other configurations are the same as those of the plasma processing apparatus 105 (FIG. 9).

The auxiliary suction part 95a has the same structure as the suction part 9a, has a nozzle-like suction port at the bottom, and has a structure for exhausting the gas sucked from the suction port to the outside of the housing 1 from the top. ing.
On the other hand, the auxiliary suction part 95b has the same structure as the suction part 9b, has a nozzle-like suction port at the top, and has a structure for exhausting the gas sucked from the suction port to the outside of the housing 1 from the bottom. ing.

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 8.
FIG. 11 is a diagram corresponding to FIG. 1 when the suction part of the carry-out path is moved to the carry-in path in the first embodiment.

As shown in FIG. 11, the plasma processing apparatus 107 is provided with suction portions 9c and 9d in the partition plates 1r and 1t. The suction units 9c and 9d are the same as those in the fifth embodiment (FIG. 8).
Other configurations are the same as those of the plasma processing apparatus 100 (FIG. 1).

Here, the suction unit 9c, the gas suction amount according 9d is Q _7.
Then, the following adjustment is made so that Q ₀ becomes Q ₇ in the equation (1) so that the gas suction amount and the processing gas flow rate are balanced.
Q ₇ ≤Q ₁ + Q ₂ + Q ₃ + Q ₄ + Q ₅ ... (5)

Furthermore, the following adjustment is performed so that the flow rate of the processing gas decreases as the electrode units 10a to 14a and 10b to 14b are closer to the suction ports of the suction portions 9c and 9d.
Q ₁ ≤Q ₂ ≤Q ₃ ≤Q ₄ ≤Q ₅ ... (6)
Even with such a configuration, only the airflow in the plasma processing unit 5 is reversed, and the same effect as the plasma processing apparatus 100 (FIG. 1) can be obtained.

Embodiment 9.
FIG. 12 is a diagram corresponding to FIG. 11 when a gas blowing portion is added in the vicinity of the carry-in port in the eighth embodiment.

As shown in FIG. 12, the plasma processing apparatus 108 has gas blowing portions 90a and 90b added to the side walls 1c and 1g. The gas blowing portions 90a and 90b are the same as those in the second embodiment (FIG. 5).
Other configurations are the same as those of the plasma processing apparatus 107 (FIG. 11).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 10
FIG. 13 is a diagram corresponding to FIG. 11 when a gas blowing part is added in the vicinity of the carry-out port in the eighth embodiment.

As shown in FIG. 13, gas blowing portions 90c and 90d are added to the side walls 1d and 1h in the plasma processing apparatus 109. The gas blowing portions 90c and 90d are the same as those in the third embodiment (FIG. 6).
Other configurations are the same as those of the plasma processing apparatus 107 (FIG. 11).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 11.
FIG. 14 is a diagram corresponding to FIG. 13 when a gas blowing portion is added in the vicinity of the carry-in port in the tenth embodiment.

As shown in FIG. 14, the plasma processing apparatus 110 has gas blowing portions 90a and 90b added to the side walls 1c and 1g. The gas blowing portions 90a and 90b are the same as those in the second embodiment (FIG. 5).
Other configurations are the same as those of the plasma processing apparatus 109 (FIG. 13).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 12.
FIG. 15 is a diagram corresponding to FIG. 11 when an auxiliary suction unit is added near the carry-in port in the eighth embodiment.

As shown in FIG. 15, in the plasma processing apparatus 111, auxiliary suction portions 95a and 95b are added to the side walls 1c and 1g. The auxiliary suction portions 95a and 95b are the same as those in the seventh embodiment (FIG. 10).
Other configurations are the same as those of the plasma processing apparatus 107 (FIG. 11).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 13.
FIG. 16 is a diagram corresponding to FIG. 11 when an auxiliary suction unit is added near the carry-out port in the eighth embodiment.

As shown in FIG. 16, the plasma processing apparatus 112 includes auxiliary suction portions 95c and 95d on the side walls 1d and 1h. The auxiliary suction portions 95c and 95d are the same as those in the sixth embodiment (FIG. 9).
Other configurations are the same as those of the plasma processing apparatus 107 (FIG. 11).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 14.
FIG. 17 is a diagram corresponding to FIG. 16 when an auxiliary suction unit is added in the vicinity of the carry-in port in the thirteenth embodiment.

As shown in FIG. 17, the plasma processing apparatus 113 has auxiliary suction portions 95a and 95b added to the side walls 1c and 1g. The auxiliary suction portions 95a and 95b are the same as those in the seventh embodiment (FIG. 10).
Other configurations are the same as those of the plasma processing apparatus 112 (FIG. 16).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 15.
FIG. 18 is a diagram corresponding to FIG. 1 when an auxiliary suction unit is added to the carry-in port in the first embodiment.

As shown in FIG. 18, in the plasma processing apparatus 114, auxiliary suction portions 95a and 95b are added to the side walls 1c and 1g. The auxiliary suction portions 95a and 95b are the same as those in the seventh embodiment (FIG. 10).
Other configurations are the same as those of the plasma processing apparatus 100 (FIG. 1).

  According to such a configuration, since the structure is similar to that of Embodiment 5 (FIG. 8), the same effect can be obtained. Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 16.
FIG. 19 is a diagram corresponding to FIG. 8 when a gas blowing portion is added in the vicinity of the carry-in port in the fifth embodiment.

As shown in FIG. 19, gas blowing portions 90a and 90b are added to the side walls 1c and 1g in the plasma processing apparatus 115. The gas blowing portions 90a and 90b are the same as those in the second embodiment (FIG. 5).
Other configurations are the same as those of the plasma processing apparatus 104 (FIG. 8).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 17
FIG. 20 is a diagram corresponding to FIG. 8 when a gas blowing portion is added in the vicinity of the carry-out port in the fifth embodiment.

As shown in FIG. 20, in the plasma processing apparatus 116, gas blowing portions 90c and 90d are added to the side walls 1d and 1h. The gas blowing portions 90c and 90d are the same as those in the third embodiment (FIG. 6).
Other configurations are the same as those of the plasma processing apparatus 104 (FIG. 8).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 18
FIG. 21 is a diagram corresponding to FIG. 20 when a gas blowing portion is added in the vicinity of the carry-in port in the seventeenth embodiment.

As shown in FIG. 21, in the plasma processing apparatus 117, gas blowing portions 90a and 90b are added to the side walls 1c and 1g. The gas blowing portions 90a and 90b are the same as those in the second embodiment (FIG. 5).
Other configurations are the same as those of the plasma processing apparatus 116 (FIG. 20).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 19.
FIG. 22 is a diagram corresponding to FIG. 8 when an auxiliary suction unit is added in the vicinity of the carry-in port in the fifth embodiment.

As shown in FIG. 22, the plasma processing apparatus 118 has auxiliary suction portions 95a and 95b added to the side walls 1c and 1g. The auxiliary suction portions 95a and 95b are the same as those in the seventh embodiment (FIG. 10).
Other configurations are the same as those of the plasma processing apparatus 104 (FIG. 8).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 20.
FIG. 23 is a view corresponding to FIG. 8 when an auxiliary suction unit is added in the vicinity of the carry-out port in the fifth embodiment.

As shown in FIG. 23, in the plasma processing apparatus 119, auxiliary suction portions 95c and 95d are added to the side walls 1d and 1h. The auxiliary suction portions 95c and 95d are the same as those in the sixth embodiment (FIG. 9).
Other configurations are the same as those of the plasma processing apparatus 104 (FIG. 8).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

Embodiment 21.
FIG. 24 is a view corresponding to FIG. 23 when an auxiliary suction unit is added in the vicinity of the carry-in port in the twentieth embodiment.

As shown in FIG. 24, in the plasma processing apparatus 120, auxiliary suction portions 95a and 95b are added to the side walls 1c and 1g. The auxiliary suction portions 95a and 95b are the same as those in the seventh embodiment (FIG. 10).
Other configurations are the same as those of the plasma processing apparatus 119 (FIG. 23).

  Therefore, inflow of outside air into the plasma processing unit 5 and outflow of processing gas and gas generated in the processing process can be prevented, the amount of processing gas used can be reduced, and contamination of the surrounding environment can also be prevented.

1 is a configuration explanatory view of a plasma processing apparatus according to Embodiment 1 of the present invention. FIG. 1 is a side view of a main part of a plasma processing apparatus according to Embodiment 1 of the present invention. 1 is a cross-sectional view of a main part of a plasma processing apparatus according to Embodiment 1 of the present invention. 1 is a plan view of a main part of a plasma processing apparatus according to Embodiment 1 of the present invention. FIG. 3 is a view corresponding to FIG. 1 and showing a plasma processing apparatus according to a second embodiment of the present invention. FIG. 4 is a view corresponding to FIG. 1 and showing a plasma processing apparatus according to Embodiment 3 of the present invention. FIG. 7 is a view corresponding to FIG. 6, illustrating a plasma processing apparatus according to Embodiment 4 of the present invention. FIG. 6 is a view corresponding to FIG. 1 and showing a plasma processing apparatus according to a fifth embodiment of the present invention. FIG. 8 is a view corresponding to FIG. 1 and showing a plasma processing apparatus according to a sixth embodiment of the present invention. FIG. 10 is a view corresponding to FIG. 9, illustrating a plasma processing apparatus according to Embodiment 7 of the present invention. FIG. 10 is a view corresponding to FIG. 1, illustrating a plasma processing apparatus according to an eighth embodiment of the present invention. FIG. 11 is a view corresponding to FIG. 11 and showing a plasma processing apparatus according to a ninth embodiment of the present invention. FIG. 12 is a view corresponding to FIG. 11, illustrating a plasma processing apparatus according to a tenth embodiment of the present invention. FIG. 14 is a view corresponding to FIG. 13, showing a plasma processing apparatus according to an eleventh embodiment of the present invention. FIG. 12 is a view corresponding to FIG. 11, showing a plasma processing apparatus according to a twelfth embodiment of the present invention. FIG. 12 is a view corresponding to FIG. 11 and showing a plasma processing apparatus according to a thirteenth embodiment of the present invention. FIG. 17 is a view corresponding to FIG. 16, illustrating a plasma processing apparatus according to a fourteenth embodiment of the present invention. FIG. 16 is a view corresponding to FIG. 1, illustrating a plasma processing apparatus according to a fifteenth embodiment of the present invention. FIG. 9 is a view corresponding to FIG. 8, illustrating a plasma processing apparatus according to a sixteenth embodiment of the present invention. FIG. 9 is a view corresponding to FIG. 8 and showing a plasma processing apparatus according to an embodiment 17 of the present invention. FIG. 21 is a view corresponding to FIG. 20, illustrating a plasma processing apparatus according to an eighteenth embodiment of the present invention. FIG. 10 is a view corresponding to FIG. 8, illustrating a plasma processing apparatus according to Embodiment 19 of the present invention. FIG. 9 is a view corresponding to FIG. 8, illustrating a plasma processing apparatus according to a twentieth embodiment of the present invention. FIG. 24 is a view corresponding to FIG. 23 and showing the plasma processing apparatus according to the twenty-first embodiment of the present invention.

Explanation of symbols

1 ... Case
1a ・ ・ ・ Upper housing
1b: Lower housing
1c, 1d, 1e, 1f, 1g, 1h, 1i, 1j ・ ・ ・ Side wall
1r, 1s, 1t, 1u ・ ・ ・ Partition plate
1p ・ ・ ・ Upper wall
1q ・ ・ ・ Lower wall
2 ... Board
3 ... Inlet
4 ... Exit
5 ... Plasma treatment part
6 ... Carry-in route
7 ... Exit route
8 ... Transport section
9a, 9b, 9c, 9d ・ ・ ・ Suction part
10a, 10b, 11a, 11b, 12a, 12b, 13a, 13b, 14a, 14b ... electrode unit
15a, 15b ・ ・ ・ Cover
20a, 20b ・ ・ ・ Gas supply part
21a, 21b, 22a, 22b, 23a, 23b, 24a, 24b, 25a, 25b ... mixing chamber
31a, 31b, 32a, 32b, 33a, 33b, 34a, 34b ... Processing gas line
35a, 35b, 36a, 36b, 37a, 37b, 38a, 38b, 39a, 39b ... setting unit
40 ・ ・ ・ High frequency power supply
50,51,52,53,54 ・ ・ ・ Through hole for electrode unit
55 ... Through hole for suction part
60 ... Through-hole for transport section
70 ... Main electrode
71 ・ ・ ・ Solid dielectric
72 ... Side electrode
73 ... Gas supply member
74a, 74b ・ ・ ・ Processing gas blowing part
75 ・ ・ ・ Processing gas inlet
76 ・ ・ ・ Coupling member
77 ・ ・ ・ Process gas reservoir
80a, 80b ・ ・ ・ Spacer
90a, 90b, 90c, 90d ・ ・ Gas blowout part
95a, 95b, 95c, 95d ・ ・ ・ Auxiliary suction part
100,101,102,103,104,105,106,107,108,109,110,111,112,113,114,115,116,117,118,119,120 ... Plasma processing equipment

Claims (6)

A casing having an inlet and an outlet for a substrate to be processed, a plasma processing unit provided in the casing for generating plasma and processing the substrate to be processed, and connecting the inlet and the plasma processing unit At least one of the carry-in path, the carry-out path that connects the plasma processing unit and the carry-out port, the conveyance unit that conveys the substrate to be processed through the carry-in path and the carry-out path, and the carry-in path and the carry-out path A suction portion that exposes the suction port to suck a gas from the plasma processing portion, a plurality of pairs of counter electrodes that are provided in the plasma processing portion and arranged in the transport direction of the substrate to be processed, and provided in the plasma processing portion A processing gas blowing section for supplying the processing gas between the counter electrodes, and a setting section for setting a processing gas supply amount of the processing gas blowing section, and the setting section processes the processing gas blowing section closer to the suction port. Gas supply The plasma processing apparatus for setting the processing gas supply amount so decreases. 2. The plasma processing apparatus according to claim 1, wherein the suction port is exposed to the carry-out path. 2. The plasma processing apparatus according to claim 1, wherein the suction port is exposed to the carry-in path. 2. The plasma processing apparatus according to claim 1, wherein the suction port is exposed to the carry-in path and the carry-out path. 5. The plasma processing apparatus according to claim 1, wherein the casing includes a gas blowing portion in the vicinity of at least one of the carry-in port and the carry-out port. Further comprising an auxiliary suction part having an auxiliary suction port, the auxiliary suction port,
6. The plasma processing apparatus according to claim 1, which is provided in the vicinity of at least one of the carry-in port and the carry-out port.

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