JP2009187651A - METHOD FOR MANUFACTURING Ge-Cr ALLOY SPUTTERING TARGET - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a Ge-Cr alloy sputtering target and a method of manufacturing it, which prevent unevenness in film forming speed of a GeCrN series layer film-formed by reactive sputtering as an intermediate layer between a recording layer and a protection layer of a phase change optical disk and in the film composition and can increase product yields. <P>SOLUTION: The Ge-Cr alloy sputtering target containing 5-50 at.% of Cr is characterized by having a relative density of 95% or higher. The method for manufacturing the Ge-Cr alloy sputtering target is characterized by uniformly dispersing and mixing a Cr powder of 75 μm or less size after flat sieving and a Ge powder of 250 μm or less size after sieving, the Ge powder having a BET specific surface area of 0.4 m<SP>2</SP>/g or less, and sintering the mixture. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

In the present invention, when a GeCrN-based thin film is formed by reactive sputtering using a Ge—Cr alloy sputtering target, it is possible to suppress variations in deposition rate and accompanying compositional deviation, and to obtain stable sputtering characteristics. The present invention relates to a method for producing a Cr alloy sputtering target.

In recent years, high-density recording optical disc technology capable of recording / reproducing without the need of a magnetic head has been developed, and interest is rapidly increasing. These optical discs are classified into three types: read-only type, write-once type, and rewritable type. In particular, the phase change method used in the write-once type or the rewritable type is attracting attention.
A phase-change optical disc records and reproduces information by heating the recording thin film on the substrate by laser irradiation and causing a crystallographic phase change (amorphous crystal) in the structure of the recording thin film. More specifically, information is reproduced by detecting a change in reflectance caused by a change in optical constant between the phases.

The above phase change is performed by laser light irradiation with a diameter of about 1 to several μm. In this case, for example, when a 1 μm laser beam passes at a linear velocity of 10 m / s, the time during which light is irradiated to a certain point on the optical disk is 100 ns, and the phase change and reflectance are detected within this time. There is a need.
In order to realize the crystallographic phase change, that is, the phase change between amorphous and crystal, the melting and rapid cooling are applied not only to the phase change recording layer of the optical disc but also to the surrounding dielectric protective layer and the reflective film of the aluminum alloy. It will be given repeatedly.

For this reason, the phase change optical disk is formed by sandwiching both sides of a Ge—Sb—Te-based recording thin film layer with a zinc sulfide-silicate (ZnS · SiO ₂ ) -based high-melting-point dielectric protective layer, and further aluminum It has a four-layer structure with an alloy reflective film.
Among them, the reflective layer and the protective layer are required to have an optical function that increases absorption between the amorphous part and the crystalline part and has a large difference in reflectance, as well as the moisture resistance of the recording thin film and the function of preventing deformation due to heat, A function of thermal condition control at the time of recording is required (for example, see Non-Patent Document 1).
In this way, the protective layer of the high melting point dielectric is resistant to the repeated heat stress caused by heating and cooling, and further prevents these thermal effects from affecting the reflective film and other parts. The film itself must be thin, have low reflectivity, and do not deteriorate. In this sense, the dielectric protective layer has an important role.

In general, phase change optical discs such as DVD-RAM guarantee the number of rewrites of 10 ⁵ to 10 ^6, but zinc sulfide-silica oxide (ZnS · O) used for the purpose of protecting the recording layer is used. rewriting characteristics by the diffusion of S or the like from SiO ₂₎ based layer came deteriorates.
As a solution to this problem, an intermediate layer is provided between the recording layer and the protective layer. In particular, a GeCrN-based material has been proposed as the intermediate layer material.
In forming a GeCrN-based intermediate layer, a Ge—Cr alloy target is usually used, and reactive sputtering (reactive sputtering) is performed in a nitrogen gas atmosphere.
However, the conventional target has a variation in the film forming speed, which causes a problem that the film composition is shifted, resulting in a defective product and a decrease in yield.

  As a conventional technique, a material such as a Ge—Cr system is used, a compositional discontinuous surface orthogonal to the thickness direction is set, and a gap between the upper surface, which is a surface on the sputtering start side, and the compositional discontinuous surface is set. In order to form a thin film containing a plurality of components in a desired ratio immediately after the start of use, the components in the first region portion are compared with the thin film ratio as the sputtering rate is lower. A technique set to increase the number is disclosed (see Patent Document 1).

In addition, as a conventional sputtering target such as Ge—Cr, the ratio of the peak intensity of the (220) plane to the peak intensity of the (111) plane when the plane orientation of the target surface is measured by an X-ray diffraction method (220) / (111) is set to 0.3 or more, and further, the (220) / (111) peak intensity is disclosed as a target whose variation as a whole of the target surface is within ± 30% (see Patent Document 2). ).
Moreover, as a conventional sputtering target such as Ge—Cr, the high-purity Ge or Ge alloy constituting the target has an Ag content and an Au content of 5 ppm or less, respectively, and further has the same Ag content and Au content. A target having a variation of 30% or less is disclosed (see Patent Document 3).

JP 2000-178724 A JP 2002-38258 A JP 2002-69624 A

“Optical” Vol. 26, No. 1 9-15

The present invention suppresses variations in the deposition rate and film composition of a GeCrN-based layer formed by reactive sputtering as an intermediate layer between a recording layer and a protective layer of a phase change optical disk, and increases product yield. A method for producing a Ge—Cr alloy sputtering target that can be obtained.

In order to solve the above-mentioned problems, the present inventors have conducted intensive research. As a result, the target density, and further, the variation in density and composition are set to the optimum conditions to suppress the variation in film formation rate and film composition. And gained knowledge that the product yield can be increased.
The present invention is based on this finding,
1. A Cr powder having a size of 55 μm or less under the sieve and a Ge powder having a BET specific surface area of 0.1 to 0.4 m ² / g which is 200 μm or less under the screen are uniformly dispersed and mixed, and then sintered. A method for producing a Ge—Cr alloy sputtering target is provided.

The present invention further provides 2. A Cr powder having a screen size of 55 μm or less and a Ge powder having a screen size of 200 μm or less and a BET specific surface area of 0.1 to 0.4 m ² / g were uniformly dispersed and mixed, then sintered, and the relative density was 97. % Or more, the density variation within the target is within ± 1.5%, and the X-ray diffraction peak has a maximum peak intensity A of Ge phase when 2θ is 20 ° to 30 ° and a maximum peak of GeCr compound phase at 30 ° to 40 °. The manufacturing method of the Ge-Cr alloy sputtering target containing Cr5-50at% whose ratio B / A of intensity | strength B is 0.18 or more .
3. The method for producing a Ge—Cr alloy sputtering target according to 2 above, wherein the composition variation in the target is within ± 0.5% .

When forming a GeCrN-based thin film by reactive sputtering using the high-density Ge—Cr alloy sputtering target obtained by the production method of the present invention, it is possible to effectively suppress variations in film formation rate and accompanying compositional deviation, and to stabilize It has the outstanding effect that the sputter | spatter characteristics obtained can be acquired. As a result, the incidence of defective products can be significantly reduced. In addition, particles and nodules generated during sputtering can be reduced, and film thickness uniformity can be improved.

It is a figure (graph) which shows the correlation with the specific surface area of Ge powder, and the relative density% of a GeCr target. It is a figure (graph) which shows the correlation with Cr particle size (under a sieve) and the relative density% of a GeCr target.

The characteristics of the sputtering target obtained by the production method of the present invention is that the relative density of the Ge—Cr alloy sputtering target containing 5 to 50 at% of Cr is 95% or more, and further the relative density is 97% or more. It is.
This high-density Ge-Cr alloy target is used in the same manner in the present invention in the form of Cr powder of 75 [mu] m or less ("75 [mu] m under sieve" is also used in the present specification) and 250 [mu] m or less ("250 [mu] m in sift") ), A BET specific surface area of 0.4 m ² / g or less, preferably 0.3 m ² / g or less, can be produced by uniformly dispersing and mixing Ge powder and then sintering.

Such a high-density Ge—Cr alloy target can suppress variations in the deposition rate and film composition of the GeCrN-based thin film formed by reactive sputtering, and can significantly reduce the occurrence of defective products.
The GeCrN-based thin film thus formed is extremely effective as an intermediate layer between the recording layer and the protective layer of the phase change optical disk.
The relationship between the specific surface area of the Ge powder and the relative density% of the GeCr target is shown in FIG. FIG. 2 shows the relationship between the Cr grain size and the relative density% of the GeCr target. These are target correlation diagrams when used under a sieve of each powder. Moreover, these are cases in which the zoom condition hot pressing Ge-20at% Cr, 800 ° C × 150kg / cm 2.

When the relative density of the Ge—Cr alloy sputtering target is less than 95%, variations in film formation rate and film composition increase, resulting in a decrease in product yield.
In addition, when sintered using Cr powder exceeding 75 μm below the sieve, Ge powder exceeding 250 μm below the sieve and exceeding the BET specific surface area of 0.4 m ² / g, a relative density of 95% or more cannot be achieved. Variations in film formation rate and film composition increase and product yield decreases.
Further, it is desirable that the density variation within the Ge—Cr alloy sputtering target is within ± 1.5%, and further the composition variation within the target is within ± 0.5%. As a result, variations in film formation rate and film composition can be further improved.
A GeCr compound phase and a Ge phase exist in the Ge—Cr alloy sputtering target, and in the X-ray diffraction peak, the maximum peak intensity A of the Ge phase when 2θ is 20 ° to 30 ° and the GeCr compound at 30 ° to 40 °. It is desirable that the ratio B / A of the maximum peak intensity B of the phase is 0.18 or more. Thereby, the uniformity can be further improved.

When manufacturing a Ge—Cr alloy sputtering target, it is desirable to uniformly disperse and mix Ge powder having a BET specific surface area of 0.1 to 0.4 m ² / g and then sinter.
Furthermore, in the case of the above sintering, it is desirable to use a hot press and sinter under conditions of a sintering temperature of 760 to 900 ° C. and a surface pressure of 75 to 250 kg / cm ² .
This makes it possible to produce a Ge—Cr alloy sputtering target having a more stable relative density of 95% or more.
In addition, the improvement in the density of the sputtering target can reduce the number of vacancies, refine the crystal grains, and make the sputtering surface of the target uniform and smooth, thereby reducing particles and nodules during sputtering, and further improving the target life. It has a remarkable effect that it can be lengthened.

  Hereinafter, description will be made based on Examples and Comparative Examples. In addition, a present Example is an example to the last, and is not restrict | limited at all by this example. In other words, the present invention is limited only by the scope of the claims, and includes various modifications other than the examples included in the present invention.

Example 1
Purity 5N (99.999%), Ge powder of 100 μm under sieve and 3N (99.9%), Cr powder of 55 μm under sieve are prepared, and these powders are blended to become Ge-20 at% Cr, After this was dry mixed, it was filled in a carbon die and hot pressed under conditions of a temperature of 800 ° C. and a pressure of 150 kg / cm ² .
This sintered body was finished and used as a target. The relative density of the target was 99% (5.54 g / cm ³ at 100% density). The density of samples arbitrarily collected from three locations of this target was measured by Archimedes. The results are shown in Table 1.

Similarly, composition analysis was performed on samples arbitrarily collected from three locations of the target. The results are shown in Table 2. Table 3 shows the results of measuring the X-ray diffraction intensity of the bulk sample collected from the target on the side facing the substrate.
Next, using this target, a nitrogen-containing argon _{(Ar: N 2 = 25:} 50sccm) under and reactive sputtering under the conditions of power 200 W, thereby forming a GeCrN layer to a thickness of 300Å on the substrate. Tables 4 and 5 show the measurement results of variations in film thickness and transmittance, respectively.

(Example 2)
Purity 5N (99.999%), Ge powder of 200 μm under sieve and 3N (99.9%), Cr powder of 55 μm under sieve were prepared, and these powders were blended to become Ge-20 at% Cr, After this was dry mixed, it was filled into a carbon die and hot pressed under conditions of a temperature of 800 ° C. and a pressure of 100 kg / cm ² .
This sintered body was finished and used as a target. The relative density of the target was 96% (5.54 g / cm ³ at 100% density). The density of samples arbitrarily collected from three locations of this target was measured by Archimedes. The results are shown in Table 1.

Similarly, the composition of samples arbitrarily collected from three locations of the target was analyzed. The results are shown in Table 2. Table 3 shows the results of measuring the X-ray diffraction intensity of the bulk sample collected from the target on the side facing the substrate.
Next, using this target, reactive sputtering was performed in a nitrogen-containing argon (Ar: N ₂ = 25: 50 sccm) atmosphere at a power of 200 W to form a GeCrN film on the substrate to a thickness of 300 mm. Tables 4 and 5 show the measurement results of variations in film thickness and transmittance, respectively.

(Example 3)
Purity 5N (99.999%), 75 μm Ge powder under the sieve and 3N (99.9%), 25 μm Cr powder under the sieve are prepared, and these powders are formulated to be Ge-50 at% Cr, After this was dry mixed, it was filled in a carbon die and hot pressed under conditions of a temperature of 800 ° C. and a pressure of 150 kg / cm ² .
This sintered body was finished and used as a target. The relative density of the target was 97% (5.97 g / cm ³ at 100% density). The density of samples arbitrarily collected from three locations of this target was measured by Archimedes. The results are shown in Table 1.

Similarly, the composition of samples arbitrarily collected from three locations of the target was analyzed. The results are shown in Table 2. Table 3 shows the results of measuring the X-ray diffraction intensity of the bulk sample collected from the target on the side facing the substrate.
Next, using this target, reactive sputtering was performed in a nitrogen-containing argon (Ar: N ₂ = 25: 50 sccm) atmosphere at a power of 200 W to form a GeCrN film on the substrate to a thickness of 300 mm. Tables 4 and 5 show the measurement results of variations in film thickness and transmittance, respectively.

(Comparative Example 1)
Prepare 5N (99.999%), 300 μm Ge powder under sieve and 3N (99.9%), 150 μm Cr powder under sieve, and prepare these powders to be Ge-20 at% Cr. After this was dry mixed, it was filled in a carbon die and hot pressed under conditions of a temperature of 800 ° C. and a pressure of 50 kg / cm ² .
This sintered body was finished and used as a target. The relative density of the target was 90% (5.54 g / cm ³ at 100% density). The density of samples arbitrarily collected from three locations of this target was measured by Archimedes. The results are shown in Table 1.

Similarly, the composition of samples arbitrarily collected from three locations of the target was analyzed. The results are shown in Table 2. Table 3 shows the results of measuring the X-ray diffraction intensity of the bulk sample collected from the target on the side facing the substrate.
Next, using this target, reactive sputtering was performed in a nitrogen-containing argon (Ar: N ₂ = 25: 50 sccm) atmosphere at a power of 200 W to form a GeCrN film on the substrate to a thickness of 300 mm. Tables 4 and 5 show the measurement results of variations in film thickness and transmittance, respectively.

(Comparative Example 2)
Purity 5N (99.999%), Ge powder of 350 μm below the sieve and 3N (99.9%), Cr powder of 75 μm under the sieve are prepared, and these powders are blended to become Ge-20 at% Cr. After this was dry mixed, it was filled in a carbon die and hot pressed under conditions of a temperature of 750 ° C. and a pressure of 100 kg / cm ² .
This sintered body was finished and used as a target. The relative density of the target was 93% (5.54 g / cm ³ at 100% density). The density of samples arbitrarily collected from three locations of this target was measured by Archimedes. The results are shown in Table 1.

Similarly, the composition of samples arbitrarily collected from three locations of the target was analyzed. The results are shown in Table 2. Table 3 shows the results of measuring the X-ray diffraction intensity of the bulk sample collected from the target on the side facing the substrate.
Next, using this target, reactive sputtering was performed in a nitrogen-containing argon (Ar: N ₂ = 25: 50 sccm) atmosphere at a power of 200 W to form a GeCrN film on the substrate to a thickness of 300 mm. Tables 4 and 5 show the measurement results of variations in film thickness and transmittance, respectively.

As is clear from Examples 1 to 3 and Comparative Examples 1 and 2 shown in Table 1, the relative densities of Examples 1 to 3 are all 95% or more. For Examples 1 and 3, the relative density is Achieved over 97%. In both cases, the density variation within the target was within ± 1.5%.
On the other hand, the relative density of Comparative Example 1 and Comparative Example 2 was less than 95%, and the density variation in the target exceeded ± 1.5%.
Table 2 shows the variation in composition, and the composition variation in the targets of Examples 1 to 3 was all within ± 0.5%.
On the other hand, the composition variation in the targets of Comparative Example 1 and Comparative Example 2 exceeded ± 0.5%.

Table 3 shows the ratio B / A between the maximum peak intensity A of the Ge phase of Examples 1 to 3 and Comparative Examples 1 to 2 and the maximum peak intensity B of the same GeCr compound at 30 ° to 40 °. Examples 1 to 3 satisfy the condition of the present invention of 0.18 or more. However, in Comparative Examples 1 and 2, B / A was less than 0.18.
Table 4 shows the evaluation results of variations in film thickness and transmittance using the target having the above characteristics. It can be seen that Examples 1 to 3 have extremely small variations in film thickness and transmittance. On the other hand, it can be seen that Comparative Examples 1 and 2 have large variations in film thickness and transmittance, and are not preferable as targets.

Further, it was found that the high-density sputtering target obtained by the production method of the present invention has an effect of reducing particles and nodules generated during sputtering and improving the film thickness uniformity. On the other hand, Comparative Examples 1 and 2 have a problem that abnormal discharge occurs during sputtering due to low density, and particles (dust generation) and nodules increase due to these. I understood.
From the above, the sputtering target obtained by the production method of the present invention is extremely effective for forming a GeCrN-based layer formed by reactive sputtering as an intermediate layer between the recording layer and the protective layer of the phase change optical disk. I understand that.

When forming a GeCrN-based thin film by reactive sputtering using the high-density Ge—Cr alloy sputtering target obtained by the manufacturing method of the present invention, it is possible to effectively suppress variations in film formation rate and accompanying compositional deviation, and to stabilize It has the outstanding effect that the sputter | spatter characteristics obtained can be acquired. As a result, the incidence of defective products can be significantly reduced. In addition, since the particles and nodules generated during sputtering can be reduced and the film thickness uniformity can be improved, the thin film formed using the target thus produced is a phase change optical disk of DVD-RAM or the like. It is useful as a protective film.

Claims (9)

A Ge—Cr alloy sputtering target containing Cr 5 to 50 at%, wherein the relative density is 95% or more. 2. The Ge—Cr alloy sputtering target according to claim 1, wherein the relative density is 97% or more. The Ge—Cr alloy sputtering target according to claim 1, wherein density variation in the target is within ± 1.5%. The Ge—Cr alloy sputtering target according to claim 1, wherein the composition variation in the target is within ± 0.5%. In the X-ray diffraction peak, the ratio B / A of the maximum peak intensity A of the Ge phase when 2θ is 20 ° to 30 ° and the maximum peak intensity B of the GeCr compound phase when 30 ° to 40 ° is 0.18 or more. The Ge-Cr alloy sputtering target according to each of claims 1 to 4, wherein A Ge-Cr alloy sputtering target characterized in that Cr powder of 75 μm or less and Ge powder of 250 μm or less and BET specific surface area of 0.4 m ² / g or less are uniformly dispersed and mixed and then sintered. Production method. The Cr powder of 75 μm or less and the Ge powder of 250 μm or less and a BET specific surface area of 0.4 m ² / g or less are uniformly dispersed and mixed and then sintered. The manufacturing method of Ge-Cr alloy sputtering target as described in any one of. The method for producing a Ge—Cr alloy sputtering target according to claim 6, wherein the Ge powder having a BET specific surface area of 0.1 to 0.4 m ² / g is uniformly dispersed and mixed and then sintered. . The Ge—Cr alloy sputtering target according to claim 6, wherein the sintering is performed using a hot press under conditions of a sintering temperature of 760 to 900 ° C. and a surface pressure of 75 to 250 kg / cm ^2. Manufacturing method.