CN102251222A - Chromium alloy target material and metal material with hard film - Google Patents
Chromium alloy target material and metal material with hard film Download PDFInfo
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- CN102251222A CN102251222A CN2010101855206A CN201010185520A CN102251222A CN 102251222 A CN102251222 A CN 102251222A CN 2010101855206 A CN2010101855206 A CN 2010101855206A CN 201010185520 A CN201010185520 A CN 201010185520A CN 102251222 A CN102251222 A CN 102251222A
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Abstract
The invention relates to a chromium alloy target material and a metal material with a hard film. In particular, the invention relates to a chromium alloy target material which comprises chromium and silicon, or comprises chromium and germanium, wherein the weight percentage of chromium is 5%-95%; and when the thickness of a film generated by a physical gas-phase sputtering process is more than or equal to 2 microns, the vickers hardness values of the film are Hv800-Hv1200 and Hv800-Hv1000 respectively. The target material can be used to generate a metal material with a hard film, and the metal material comprises a metal substrate and a chromium silicon alloy film, or comprises a metal substrate and a chromium germanium alloy film.
Description
Technical field
The present invention relates to target and application thereof, and be particularly related to the Chrome metal powder target that can produce film of high hardness and the application on metallic substance thereof.
Background technology
Covering the formed metallic substance of ganoine thin film on metal base can be applicable in the suitable extensive fields.With hand-held product common in the daily life (as mobile phone, music player (as the Mp3 player), recording product, global positioning system (GPS) and PDA(Personal Digital Assistant)) is example; under the demand of pursuing high texture and taste, the shell regular meeting of hand-held product is made with above-mentioned metallic substance.For example, flourish in recent years mobile phone market, the common method that plates one deck ganoine thin film with aluminum magnesium alloy is made the shell of mobile phone, highlights the texture of mobile phone itself by this.
Yet, be subjected to the friction of hard objects or collision along with the ganoine thin film of above-mentioned metallic substance and come off, outward appearance with the hand-held product of above-mentioned metallic substance manufacturing will lose original texture, so the hardness value of the ganoine thin film of metallic substance size can be closely bound up with the texture of product appearance.In addition, need in the product of abrasion performance at other, hardness value also is related to the work-ing life of this product.
In the prior art, one of method of the ganoine thin film of common manufacturing abrasion performance is to adopt reactive sputtering and two kinds of technology of cosputtering to deposit ganoine thin film to metal base simultaneously.Above-mentioned known main drawback is that owing to use two kinds of different targets to carry out sputter simultaneously, the cavity configuration that sputter is used is very complicated; Owing to adopt reactive sputtering, so the ganoine thin film quality instability of its generation; And when its thickness was 3 microns, Vickers' hardness (Vickers Hardness) value was about Hv600, still dislikes on the low side slightly.
In addition, other shortcoming of making the prior art of ganoine thin film comprises that in the cavity that additional gas to the sputter of needs interpolation except argon gas used, the deposition region of polluting non-ganoine thin film easily causes product percent of pass to reduce.
Summary of the invention
Therefore, the object of the present invention is to provide the Chrome metal powder target to reach the metallic substance of Chrome metal powder target acquisition thus, wherein the Chrome metal powder target is made up of chromium and silicon, and only need use single target and physical vapor sputtering technology can produce ganoine thin film, so the cavity configuration that its sputter is used is simple, the ganoine thin film steady quality that produces, and the vickers hardness number of film can reach more than the Hv800.In addition, the present invention does not need the additional gas beyond the argon gas, so do not have the problem of the deposition region of the non-ganoine thin film of above-mentioned pollution.
According to embodiment of the present invention, provide the chrome-silicon alloy target material.This chrome-silicon alloy target material is made up of chromium and silicon, wherein the shared weight percent of chromium is 5% to 95%, and when the thickness of the film that is produced via the physical vapor sputtering technology during more than or equal to 2 microns (μ m), the vickers hardness number of above-mentioned film is Hv800 to Hv1200.
According to another embodiment of the present invention, provide chromium germanium alloy target.This chromium germanium alloy target is made up of chromium and germanium, and wherein the shared weight percent of chromium is 5% to 95%, and when the thickness of the film that is produced via the physical vapor sputtering technology during more than or equal to 2 microns, the vickers hardness number of above-mentioned film is Hv800 to Hv1000.
According to another embodiment of the present invention, provide metallic substance with ganoine thin film.This metallic substance with ganoine thin film comprises metal substrate and chrome-silicon alloy firm, its medium-chrome silicone alloy firm is the surface that is formed at said metal substrates by the chrome-silicon alloy target material by the physical vapor sputtering technology, and above-mentioned chrome-silicon alloy target material is made up of chromium and silicon, and the shared weight percent of chromium is 5% to 95%.In addition, when the thickness of above-mentioned chrome-silicon alloy firm during more than or equal to 2 microns, the vickers hardness number of chrome-silicon alloy firm is Hv800 to Hv1200.
According to another embodiment of the present invention, provide metallic substance with ganoine thin film.This metallic substance with ganoine thin film comprises metal substrate and chromium germanium alloy film, wherein chromium germanium alloy film is the surface that is formed at said metal substrates by chromium germanium alloy target by the physical vapor sputtering technology, and above-mentioned chromium germanium alloy target is made up of chromium and germanium, and the shared weight percent of chromium is 5% to 95%.In addition, when the thickness of above-mentioned chromium germanium alloy film during more than or equal to 2 microns, the vickers hardness number of chromium germanium alloy film is Hv800 to Hv1000.
Advantage of the present invention is, by the use of single target, and except that can reaching the stay-in-grade purpose of ganoine thin film and then improve the product percent of pass, and reactive sputtering, the physical vapor sputtering technology can also be enhanced productivity, and reduces time cost.
Embodiment
An example of Chrome metal powder target of the present invention is made up of chromium and silicon, and wherein the shared weight percent of chromium is 5% to 95%.In the present invention, allow to exist the impurity of certain content.The above-mentioned chrome-silicon alloy target material of being made up of chromium and silicon can produce the film of the structure with nanometer (nm) yardstick via the physical vapor sputtering technology.And when the thickness of above-mentioned film during more than or equal to 2 microns, its vickers hardness number is Hv800 to Hv1200.Can find that after utilizing X-ray to be detected the formed film of aforesaid way has the structure of nanoscale really, so make film possess the characteristic of high rigidity.
Another example of Chrome metal powder target of the present invention is made up of chromium and germanium, and wherein the shared weight percent of chromium is similarly 5% to 95%.In addition, when handling via the physical vapor sputtering technology equally, the film that produced of chromium germanium alloy target during more than or equal to 2 microns, has the vickers hardness number of Hv800 to Hv1000 at thickness equally thus.
When adopting the Chrome metal powder target formation film of above-mentioned two examples of the present invention, adoptable physical vapor sputtering technology comprises direct current (DC) formula sputtering technology, intermediate frequency (MF) formula sputtering technology, radio frequency (RF) formula sputtering technology and magnetron sputtering technology.Compared to intermediate frequency (MF) formula sputtering technology and RF-type sputtering technology, the machinery equipment that the single flow sputtering technology is adopted is comparatively simple, so it has relative advantage on equipment cost.In addition, the single flow sputtering technology is compared to intermediate frequency (MF) formula sputtering technology and RF-type sputtering technology, and its sedimentation effect is very fast, so have the advantage on the production efficiency.
And the present invention has an example of the metallic substance of ganoine thin film, comprises metal substrate and chrome-silicon alloy firm.Above-mentioned chrome-silicon alloy firm is to be formed at the lip-deep of said metal substrates by the chrome-silicon alloy target material by the physical vapor sputtering technology, and its medium-chrome silicone alloy target material is made up of chromium and silicon, and the shared weight percent of chromium is 5% to 95%.In addition, when the thickness of above-mentioned chrome-silicon alloy firm during more than or equal to 2 microns, the vickers hardness number of chrome-silicon alloy firm is Hv800 to Hv1200.
The present invention has another example of the metallic substance of ganoine thin film, comprises metal substrate and chromium germanium alloy film.Above-mentioned chromium germanium alloy film is to utilize the chromium germanium alloy target of being made up of chromium and germanium to be formed at the lip-deep of said metal substrates by the physical vapor sputtering technology.The shared weight percent of chromium is similarly 5% to 95% in the chromium germanium alloy target, and when the thickness of chromium germanium alloy film during more than or equal to 2 microns, the vickers hardness number of chromium germanium alloy film is similarly Hv800 to Hv1000.
In another example of the present invention of above-mentioned metallic substance with ganoine thin film, the material of metal substrate can be the arbitrary combination of stainless steel, copper alloy, aluminium alloy, magnesium alloy, titanium alloy or above-mentioned materials.With regard to weight, compared to stainless steel and copper alloy, aluminium alloy, magnesium alloy and titanium alloy have the advantage of light weight.Yet with regard to reclaiming difficulty or ease and energy that manufacturing consumed, stainless steel and copper alloy have more advantage than other three material.
And in another example of above-mentioned metallic substance with ganoine thin film, for the bonding force between reinforced metal substrate and the chrome-silicon alloy firm (or chromium germanium alloy film), can further append metallic film between metal substrate and chrome-silicon alloy firm, the material of wherein said metallic film can be selected from stainless steel, nickelalloy, titanium, zirconium, copper, nickel or chromium.
With two example class of the Chrome metal powder target of the invention described above seemingly, have in two examples of metallic substance of ganoine thin film in the present invention, the physical vapor sputtering technology of employing can comprise single flow sputtering technology, intermediate frequency (MF) formula sputtering technology, RF-type sputtering technology or magnetron sputtering technology.
In the preparation of metallic substance with ganoine thin film, earlier metal substrate is positioned in the required cavity of physical vapor sputtering technology, then with target utmost point sputter chrome-silicon alloy target material of the present invention or chromium germanium alloy target, thereby the film of the structure of depositing nano yardstick on metal substrate makes metal substrate possess the characteristic of high rigidity and high abrasion consumption.
The demand that is proposed according to the mobile phone dealer, in order to ensure the texture of product and attractive in appearance, in the definition of high-order product, the vickers hardness number of its case surface need be higher than Hv800.According to the above, the ganoine thin film that chrome-silicon alloy target material of the present invention or chromium germanium alloy target are produced can satisfy above-mentioned requirements.And compared to prior art, the ganoine thin film that the present invention produced can reach higher hardness value at thin thickness (2 microns), so can promote the efficient of production.
Be described more specifically the present invention with next with embodiment, but scope of the present invention is not limited by these embodiment.
Embodiment one
At first prepare a plurality of chrome-silicon alloy target materials, wherein the weight percent of chromium content is 10% to 20% in these chrome-silicon alloy target materials.Then prepare a plurality of identical stainless steel metal substrates.Subsequently, the stainless steel metal substrate is placed physical vapor deposition sputter cavity, with the above-mentioned chrome-silicon alloy target material of single flow magnetic controlling target utmost point difference sputter, the chrome-silicon alloy firm of deposition 2 micron thickness on the surface of the stainless steel metal substrate of correspondence obtains a plurality of metallic substance with ganoine thin film respectively.According to the result of actual measurement, the vickers hardness number of the chrome-silicon alloy firm on the stainless steel metal substrate surface is Hv890 to Hv980.
Embodiment two
At first prepare a plurality of chrome-silicon alloy target materials, wherein the weight percent of chromium content is 35% to 45% in these chrome-silicon alloy target materials.Then prepare a plurality of identical stainless steel metal substrates.Subsequently, the stainless steel metal substrate is placed physical vapor deposition sputter cavity, with the above-mentioned chrome-silicon alloy target material of single flow magnetic controlling target utmost point difference sputter, the chrome-silicon alloy firm of deposition 2 micron thickness on the surface of the stainless steel metal substrate of correspondence obtains a plurality of metallic substance with ganoine thin film respectively.According to the result of actual measurement, the vickers hardness number of the chrome-silicon alloy firm on the stainless steel metal substrate surface is Hv840 to Hv880.
Embodiment three
At first prepare a plurality of chrome-silicon alloy target materials, wherein the weight percent of chromium content is 65% to 75% in these chrome-silicon alloy target materials.Then prepare a plurality of identical stainless steel metal substrates.Subsequently, the stainless steel metal substrate is placed physical vapor deposition sputter cavity, with the above-mentioned chrome-silicon alloy target material of single flow magnetic controlling target utmost point difference sputter, the chrome-silicon alloy firm of deposition 2 micron thickness on the surface of the stainless steel metal substrate of correspondence obtains a plurality of metallic substance with ganoine thin film respectively.According to the result of actual measurement, the vickers hardness number of the chrome-silicon alloy firm on the stainless steel metal substrate surface is Hv840 to Hv890.
Embodiment four
At first prepare a plurality of chrome-silicon alloy target materials, wherein the weight percent of chromium content is 85% to 95% in these chrome-silicon alloy target materials.Then prepare a plurality of identical stainless steel metal substrates.Subsequently, the stainless steel metal substrate is placed physical vapor deposition sputter cavity, with the above-mentioned chrome-silicon alloy target material of single flow magnetic controlling target utmost point difference sputter, the chrome-silicon alloy firm of deposition 2 micron thickness on the surface of the stainless steel metal substrate of correspondence obtains a plurality of metallic substance with ganoine thin film respectively.According to the result of actual measurement, the vickers hardness number of the chrome-silicon alloy firm on the stainless steel metal substrate surface is Hv810 to Hv840.
Though the present invention with embodiment openly as above; right its is not in order to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; all can do various changes and modification, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (12)
1. the chrome-silicon alloy target material is made up of chromium and silicon, and wherein the shared weight percent of this chromium is 5% to 95%;
Wherein said chrome-silicon alloy target material is when the thickness of the film that is produced via the physical vapor sputtering technology during more than or equal to 2 microns, and the vickers hardness number of this film is Hv800 to Hv1200.
2. chrome-silicon alloy target material as claimed in claim 1, wherein this physical vapor sputtering technology is selected from the group that is made up of single flow sputtering technology, intermediate frequency formula sputtering technology, RF-type sputtering technology and magnetron sputtering technology.
3. chromium germanium alloy target is made up of chromium and germanium, and wherein the shared weight percent of this chromium is 5% to 95%;
Wherein said chromium germanium alloy target is worked as the thickness of the film that is produced via the physical vapor sputtering technology more than or equal to 2 microns, and the vickers hardness number of this film is Hv800 to Hv1000.
4. chromium germanium alloy target as claimed in claim 3, wherein this physical vapor sputtering technology is selected from the group that is made up of single flow sputtering technology, intermediate frequency formula sputtering technology, RF-type sputtering technology and magnetron sputtering technology.
5. have the metallic substance of ganoine thin film, comprise:
Metal substrate; And
The chrome-silicon alloy firm, it is formed on the surface of this metal substrate by the chrome-silicon alloy target material by the physical vapor sputtering technology;
Wherein this chrome-silicon alloy target material is made up of chromium and silicon, and the shared weight percent of this chromium is 5% to 95%;
Wherein when the thickness of this chrome-silicon alloy firm during more than or equal to 2 microns, the vickers hardness number of this chrome-silicon alloy firm is Hv800 to Hv1200.
6. the metallic substance with ganoine thin film as claimed in claim 5, wherein the material of this metal substrate is selected from the group that is made up of the arbitrary combination of stainless steel, copper alloy, aluminium alloy, magnesium alloy, titanium alloy and above-mentioned materials.
7. the metallic substance with ganoine thin film as claimed in claim 5 also comprises the metallic film between described metal substrate and described chrome-silicon alloy firm;
Wherein the material of this metallic film is selected from the group that is made up of stainless steel, nickelalloy, titanium, zirconium, copper, nickel and chromium.
8. the metallic substance with ganoine thin film as claimed in claim 5, wherein this physical vapor sputtering technology is selected from the group that is made up of single flow sputtering technology, intermediate frequency formula sputtering technology, RF-type sputtering technology and magnetron sputtering technology.
9. have the metallic substance of ganoine thin film, comprise:
Metal substrate; And
Chromium germanium alloy film, it is formed on the surface of this metal substrate by chromium germanium alloy target by the physical vapor sputtering technology;
Wherein this chromium germanium alloy target is made up of chromium and germanium, and the shared weight percent of this chromium is 5% to 95%;
Wherein when the thickness of this chromium germanium alloy film during more than or equal to 2 microns, the vickers hardness number of this chromium germanium alloy film is Hv800 to Hv1000.
10. the metallic substance with ganoine thin film as claimed in claim 9, wherein the material of this metal substrate is selected from the group that is made up of stainless steel, copper alloy, aluminium alloy, magnesium alloy and titanium alloy.
11. the metallic substance with ganoine thin film as claimed in claim 9 also comprises the metallic film between described metal substrate and described chromium germanium alloy film;
The material of wherein said metallic film is selected from the group that is made up of stainless steel, nickelalloy, titanium, zirconium, copper, nickel and chromium.
12. the metallic substance with ganoine thin film as claimed in claim 9, wherein this physical vapor sputtering technology is selected from the group that is made up of single flow sputtering technology, intermediate frequency formula sputtering technology, RF-type sputtering technology and magnetron sputtering technology.
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| CN2010101855206A CN102251222A (en) | 2010-05-21 | 2010-05-21 | Chromium alloy target material and metal material with hard film |
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| CN2010101855206A CN102251222A (en) | 2010-05-21 | 2010-05-21 | Chromium alloy target material and metal material with hard film |
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| CN104988461A (en) * | 2015-07-31 | 2015-10-21 | 宁波威霖住宅设施有限公司 | Treatment method for high corrosion resistance of iron base material surfaces |
| CN105331939A (en) * | 2014-08-15 | 2016-02-17 | 安泰科技股份有限公司 | Silicon-alloy-containing target material and preparation method thereof |
| CN105586575A (en) * | 2014-10-24 | 2016-05-18 | 深圳市森泰金属技术有限公司 | Metal piece and preparing method thereof |
| CN111479209A (en) * | 2020-03-16 | 2020-07-31 | 东莞市古川胶带有限公司 | Loudspeaker diaphragm composite material |
| CN112144024A (en) * | 2020-09-14 | 2020-12-29 | 浙江最成半导体科技有限公司 | Chromium silicide target material and preparation method thereof |
| CN113897585A (en) * | 2021-10-11 | 2022-01-07 | 芜湖映日科技股份有限公司 | Silicon-chromium rotary sputtering target material and preparation method thereof |
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Application publication date: 20111123 |