JP4965524B2 - Sputtering target and manufacturing method thereof - Google Patents

Description

In the present invention, when forming a film by sputtering, direct current (DC) sputtering is possible, arcing at the time of sputtering is small, particles (dust generation) and nodules generated due to this can be reduced, and high The present invention relates to a sputtering target and a manufacturing method thereof , which can improve mass productivity with little variation in quality due to density.

In recent years, high-density recording optical disc technology capable of recording / reproducing without the need of a magnetic head has been developed, and interest is rapidly increasing. These optical discs are classified into three types: read-only type, write-once type, and rewritable type. In particular, the phase change method used in the write-once type or the rewritable type is attracting attention. The principle of recording and reproduction using this phase change type optical disk will be briefly described below.
A phase-change optical disc records and reproduces information by heating the recording thin film on the substrate by laser irradiation and causing a crystallographic phase change (amorphous crystal) in the structure of the recording thin film. More specifically, information is reproduced by detecting a change in reflectance caused by a change in optical constant between the phases.

The above phase change is performed by laser light irradiation with a diameter of about 1 to several μm. In this case, for example, when a 1 μm laser beam passes at a linear velocity of 10 m / s, the time during which light is irradiated to a certain point on the optical disk is 100 ns, and the phase change and reflectance are detected within this time. There is a need.
In order to realize the crystallographic phase change, that is, the phase change between amorphous and crystal, the melting and rapid cooling are applied not only to the phase change recording layer of the optical disc but also to the surrounding dielectric protective layer and the reflective film of the aluminum alloy. It will be given repeatedly.

For this reason, the phase change optical disk is formed by sandwiching both sides of a Ge—Sb—Te-based recording thin film layer with a zinc sulfide-silicate (ZnS · SiO ₂ ) -based high-melting-point dielectric protective layer, and further aluminum It has a four-layer structure with an alloy reflective film.
Among them, the reflective layer and the protective layer are required to have an optical function that increases the absorption between the amorphous part and the crystalline part and has a large difference in reflectance, as well as the moisture resistance of the recording thin film and the function of preventing deformation due to heat, A function of thermal condition control during recording is required (see “Optical”, Vol. 26, No. 1, pages 9 to 15).
In this way, the protective layer of the high melting point dielectric is resistant to the repeated heat stress caused by heating and cooling, and further prevents these thermal effects from affecting the reflective film and other parts. The film itself must be thin, have low reflectivity, and do not deteriorate. In this sense, the dielectric protective layer has an important role.

  The dielectric protective layer is usually formed by a sputtering method. In this sputtering method, a target composed of a positive electrode and a negative electrode is opposed to each other, and an electric field is generated by applying a high voltage between the substrate and the target in an inert gas atmosphere. Ionized electrons collide with inert gas to form a plasma, and cations in the plasma collide with the target (negative electrode) surface to strike out target constituent atoms, and the surface of the substrate where the ejected atoms face each other This is based on the principle that a film is formed by adhering to the film.

Conventionally, since the protective layer is required to have transparency in the visible light range, heat resistance, and the like, a thin film of about 500 to 2000 mm is formed by sputtering using a ceramic target such as ZnS—SiO ₂ . However, since these materials have a high bulk resistance value of the target, they cannot be formed by a direct current sputtering apparatus, and usually a high frequency sputtering (RF) apparatus is used.
However, this high-frequency sputtering (RF) apparatus has not only an expensive apparatus itself, but also has a number of disadvantages such as poor sputtering efficiency, large power consumption, complicated control, and slow film formation speed. In addition, when high power is applied to increase the deposition rate, there is a problem that the substrate temperature rises and the polycarbonate substrate is deformed.

Further, the zinc sulfide - SiO ₂ used in the silicon oxide (ZnS-SiO ₂₎ target, an average particle size in a conventional 4N or more high purity are used those 0.1 to 20 [mu] m, 700 to It is manufactured by sintering at 1200 ° C.
However, in such a temperature range, deformation of SiO ₂ itself does not occur, and reaction with ZnS does not occur. Therefore, voids are likely to be generated between ZnS and SiO ₂ , and the more fine SiO ₂ is, the more Has become conspicuous and the densification of ZnS is also inhibited, which has a problem that the target density is lowered.
Furthermore, a target containing SiO ₂ in ZnS easily generates arcing when a film is formed by sputtering, which causes particles (dust generation) and nodules generated at the time of sputtering. There is a problem that not only the uniformity and quality are deteriorated, but also the productivity is inferior.

In the present invention, when forming a film by sputtering, the influence of heating on the substrate is reduced, high-speed film formation can be performed, the film thickness can be adjusted thinly, and particles (dust generation) and nodules generated during sputtering can be reduced. The main component is zinc sulfide having a high density of 90% or more, particularly 95% or more, and even 98% or more. It aims at obtaining the sputtering target which performs.

  In order to solve the above-mentioned problems, the present inventors have conducted intensive research. As a result, the conductive oxide is used as an additive component to the target, thereby reducing the bulk resistance value, enabling DC sputtering, and protection. It was found that the characteristics as a film were not impaired, particles and nodules generated during sputtering could be reduced, and the film thickness uniformity could be improved.

The present invention is based on this finding,
1. 1 to 50 mol% of one or more kinds of conductive oxides selected from indium oxide and tin oxide, not containing silicon oxide and silicate glass , the remainder being zinc sulfide, and the target bulk resistance value being 1 Ωcm or less 1. A sputtering target comprising zinc sulfide as a main component, wherein the refractive index of the sputtered film can be adjusted to 2.0 to 2.6 and the transmittance of the sputtered film can be adjusted to a range of 85% or more . 1. The zinc sulfide according to 1 above, which contains one or more oxides selected from zirconium oxide, antimony oxide and niobium oxide in a weight ratio of 0.01 to 20% with respect to the conductive oxide. 2. Sputtering target with main component 3. The sputtering target comprising zinc sulfide as a main component according to any one of the above items 1 and 2, wherein an average crystal grain size of an insulating phase or a high resistance phase present in the target bulk is 5 μm or less. 4. The sputtering target comprising zinc sulfide as a main component according to any one of 1 to 3 above , wherein the insulating phase or the high resistance phase present in the target bulk contains zinc sulfide . 5. The sputtering target 6 comprising zinc sulfide as a main component according to any one of the above 1 to 4, wherein the target is capable of direct current (DC) sputtering and is a target for forming a phase change optical disc protective film. . 6. A sputtering target comprising zinc sulfide as a main component according to any one of 1 to 5 above , wherein the relative density is 90% or more. 7. A sputtering target comprising zinc sulfide as a main component according to any one of 1 to 5 above, wherein the relative density is 95% or more . 8. A sputtering target comprising zinc sulfide as a main component according to any one of 1 to 5 above, wherein the relative density is 98% or more . 1 to 50 mol% of one or more kinds of conductive oxides selected from indium oxide and tin oxide , which do not contain silicon oxide and silicate glass, and zinc sulfide as the remainder are uniformly mixed and mixed. By heating the powder to a temperature of 700 to 1200 ° C. by hot pressing or hot isostatic pressing and sintering under conditions of a surface pressure of 100 to 300 kg / cm ² , a target having a bulk resistance of 1 Ωcm or less is obtained. 9. A method for producing a sputtering target comprising zinc sulfide as a main component, characterized in that it is produced 10. The sulfurization according to 9 above, wherein one or more oxides selected from zirconium oxide, antimony oxide and niobium oxide are contained in an amount of 0.01 to 20% in terms of weight ratio with respect to the conductive oxide. 10. Manufacturing method of sputtering target mainly composed of zinc 11. The production of a sputtering target mainly comprising zinc sulfide as described in any one of 9 to 10 above, wherein the average crystal grain size of the insulating phase or high resistance phase present in the target bulk is 5 μm or less Method 12. 12. The method for producing a sputtering target mainly composed of zinc sulfide as described in any one of 9 to 11 above, wherein the insulating phase or the high resistance phase present in the target bulk contains zinc sulfide . The sputtering target comprising zinc sulfide as a main component according to any one of 9 to 12 above, wherein the target is capable of direct current (DC) sputtering and is a target for forming a phase change optical disc protective film. Manufacturing method 14. The manufacturing method of the sputtering target which has as a main component zinc sulfide as described in any one of said 9-13 characterized by the relative density being 90% or more .

The present invention makes it possible to perform DC sputtering when forming a film by sputtering, and is characterized by DC sputtering, which is easy to control, increases the deposition rate, and improves the sputtering efficiency. is there. In addition, since the refractive index can be increased, the use of this sputtering target can improve productivity, provide a material with excellent quality, and reduce the cost of an optical recording medium having an optical disk protective film. It has a remarkable effect that it can be manufactured stably.
In addition, particles (dust generation) and nodules generated during sputtering can be reduced, quality variations can be improved, mass productivity can be improved, and there are few holes and crystal grains are fine, and the relative density is 90% or higher. A sputtering target comprising zinc sulfide as a main component and having a density can be produced, and the phase change optical disc protective film comprising zinc sulfide as a main component using the target without losing the properties as a protective film It has a remarkable effect that it is possible to obtain an optical recording medium on which is formed.

The sputtering target of the present invention contains zinc sulfide as a main component and further contains a conductive oxide. As a result, a sputtering target having characteristics as a protective film equivalent to that of ZnS—SiO ₂ that is normally used and having a bulk resistance value of 1 Ωcm or less can be obtained, and DC sputtering becomes possible.
DC sputtering has the excellent characteristics that the film formation rate is higher and the sputtering efficiency is better than the above-described RF sputtering. Further, the DC sputtering apparatus is advantageous in that it is inexpensive, easy to control, and consumes less power.
In addition, since the refractive index is made larger than that of normal ZnS-SiO ₂ (2.0 to 2.1), the thickness of the protective film itself can be reduced, thereby improving productivity and preventing substrate heating. Can be demonstrated.
Therefore, by using the sputtering target of the present invention, productivity is improved, a material with excellent quality can be obtained, and an optical recording medium having an optical disk protective film can be manufactured stably at low cost. There is.

The content of the conductive oxide in the sputtering target is desirably 1 to 50 mol%. The reason for setting the content to 1 to 50 mol% is to obtain conductivity and maintain the characteristics of ZnS itself.
The conductive oxide is selected from indium oxide, tin oxide, and zinc oxide. Furthermore, one or more kinds of oxides selected from aluminum oxide, gallium oxide, zirconium oxide, germanium oxide, antimony oxide, and niobium oxide can be further contained. The content is desirably 0.01 to 20% in terms of weight ratio with respect to the conductive oxide.
The reason for containing the oxide is that an oxide having a valence different from that of the conductive oxide is dissolved to cause non-stoichiometry, thereby increasing the number of conduction electron holes. In this case, it is particularly desirable to dissolve the oxide in advance before mixing with ZnS.
In addition, the lower limit value in the case of 0.01 to 20% in terms of weight ratio with respect to the conductive oxide is to obtain the effect of addition, and the upper limit value is conductive when added more than the solid solubility limit. This is because the influence on the film characteristics cannot be ignored.

Furthermore, the sputtering target of the present invention can contain silicon oxide. Optical properties The inclusion of silicon oxide, there is an advantage that the thermal conductivity and the like can be adjusted equally and ZnS-SiO _2.
The inclusion of silicon oxide has the disadvantage that it is likely to be the starting point of abnormal discharge in direct current sputtering, but one or more selected from aluminum oxide, boron oxide, phosphorus oxide, alkali metal oxide, and alkaline earth metal oxide are oxidized. by including the glass-forming oxides of 0.1% or more by weight relative to silicon, it is possible to overcome the drawbacks above optical properties, the thermal conductivity and the like can be adjusted equally and ZnS-SiO ₂ It is effective to add silicon oxide having such an effect.
Moreover, it is desirable to contain 1 to 30% of this glass forming oxide in terms of molar ratio with respect to the total amount. This eliminates abnormal discharge and makes it possible to obtain a film equivalent to ZnS—SiO ₂ .

The average crystal grain shape of the insulating phase or high resistance phase present in the target bulk is desirably 5 μm or less. Thereby, the effect of suppressing abnormal discharge can be obtained.
Furthermore, it is desirable that the insulating phase or high resistance phase present in the target bulk contains one or more of zinc sulfide, silicon oxide, boron oxide, phosphorus oxide, alkali metal oxide, and alkaline earth metal oxide. Thereby, the resistance value of silicon oxide having a large insulating property can be reduced.
Further, a target having a high density of 90% or more, more preferably 95% or more can be obtained. Thus, particles (dust generation) and nodules can be further reduced during sputtering, and quality variation can be reduced and mass productivity can be improved.

In the production method of the sputtering target of the present invention, raw material powder such as zinc sulfide is uniformly mixed, heated to a temperature of 700 to 1200 ° C. by hot pressing or hot isostatic pressing, and a surface pressure of 100 to 300 kg / cm. Sintering under the condition of ² .
Thereby, it is possible to manufacture a sputtering target mainly composed of zinc sulfide having a relative density of 90% or more, further 95% or more, and a bulk resistance value of 1 Ωcm or less.
The improvement of the density of the sputtering target mainly composed of zinc sulfide of the present invention can reduce the vacancies, refine the crystal grains, and make the sputtering surface of the target uniform and smooth. It has a remarkable effect that the target life can be increased.

  Hereinafter, description will be made based on Examples and Comparative Examples. In addition, a present Example is an example to the last, and is not restrict | limited at all by this example. In other words, the present invention is limited only by the scope of the claims, and includes various modifications other than the examples included in the present invention.

Example 1
The zinc sulfide (ZnS) powder having a purity of 4N (99.99%) was uniformly mixed at a ratio of 20 mol% with respect to indium oxide (In ₂ O ₃ ) powder ZnS having a purity of 4N (99.99%).
This mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1000 ° C. The relative density of the bulk material thus obtained was 98%. The resistance value was 2.5 × 10 ⁻³ Ωcm.
When a target was prepared from this bulk body and a sputtering test was conducted, DC sputtering could be easily performed, and a sputtering target for forming a phase change optical disc protective film containing a conductive oxide containing high-density ZnS having excellent characteristics as a main component was obtained. Obtained. The transmittance of the film was 93% and the refractive index was 2.3.

(Example 2)
The zinc sulfide (ZnS) powder having a purity of 4N (99.99%) and the ITO (In ₂ O ₃ -10 wt% SnO ₂ ) powder having a purity of 4N (99.99%) at a ratio of 30 mol% with respect to ZnS. Mix evenly.
The mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1100 ° C. The relative density of the bulk material thus obtained was 97%. The resistance value was 4.7 × 10 ⁻³ Ωcm.
When a target was prepared from this bulk body and a sputtering test was conducted, DC sputtering could be easily performed, and a sputtering target for forming a phase change optical disc protective film containing a conductive oxide containing high-density ZnS having excellent characteristics as a main component was obtained. Obtained. The transmittance of the film was 88% and the refractive index was 2.4.

(Example 3)
To zinc sulfide (ZnS) powder with a purity of 4N (99.99%), indium oxide (In ₂ O ₃ ) powder with a purity of 4N (99.99%) and zirconium oxide (ZrO ₂ ) are added in an amount of 20 mol% with respect to ZnS. The mixture was uniformly mixed.
This mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1000 ° C. The relative density of the bulk material thus obtained was 100%. The resistance value was 1.4 × 10 ⁻² Ωcm.
A target was prepared from this bulk body and a sputtering test was performed. As a result, DC sputtering was easily performed, and a sputtering target for forming a phase change type optical disk protective film mainly composed of high-density ZnS having excellent characteristics was obtained. The transmittance of the film was 95%, and the refractive index was 2.3.

( Reference Example 4 )
To zinc sulfide (ZnS) powder having a purity of 4N (99.99%), indium oxide (In ₂ O ₃ ) powder having a purity of 4N (99.99%) and zirconium oxide (ZrO ₂ ) are added in an amount of 20 mol% with respect to ZnS. Furthermore, silicate glass was uniformly mixed at a ratio of 20 mol% with respect to the same ZnS. The composition of the silicate glass is SiO ₂ −0.2 wt% Al ₂ O ₃ −0.1 wt% Na ₂ O ₃ .
The mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1100 ° C. The relative density of the bulk material thus obtained was 100%. The resistance value was 5.4 × 10 ⁻² Ωcm.
A target was prepared from this bulk body and a sputtering test was performed. As a result, DC sputtering was easily performed, and a sputtering target for forming a phase change type optical disk protective film mainly composed of high-density ZnS having excellent characteristics was obtained. The transmittance of the film was 95%, and the refractive index was 2.3.

(Example 5)
A ratio of 30 mol% of zinc sulfide (ZnS) powder having a purity of 4N (99.99%) and ATO (SnO ₂ -10 wt% Sb ₂ O ₃ ) powder having a purity of 4N (99.99%) to the same ZnS. And evenly mixed.
This mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 800 ° C. The relative density of the bulk material thus obtained was 95%. The resistance value was 5.2 × 10 ⁻¹ Ωcm.
A target was prepared from this bulk body and a sputtering test was performed. As a result, DC sputtering was easily performed, and a sputtering target for forming a phase change type optical disk protective film mainly composed of high-density ZnS having excellent characteristics was obtained. The transmittance of the film was 85%, and the refractive index was 2.4.

(Example 6)
To zinc sulfide (ZnS) powder having a purity of 4N (99.99%), INO (In ₂ O ₃ -5 wt% Nb ₂ O ₅ ) powder having a purity of 4N (99.99%) was added in an amount of 20 mol with respect to the same ZnS. % Was uniformly mixed.
The mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1100 ° C. The relative density of the bulk material thus obtained was 98%. The resistance value was 3.5 × 10 ⁻² Ωcm.
A target was prepared from this bulk body and a sputtering test was performed. As a result, DC sputtering was easily performed, and a sputtering target for forming a phase change type optical disk protective film mainly composed of high-density ZnS having excellent characteristics was obtained. The transmittance of the film was 90%, and the refractive index was 2.3.

( Reference Example 7 )
A ratio of 20 mol% of zinc oxide (ZnS) powder having a purity of 4N (99.99%) and GZO (ZnO-2 wt% Ga ₂ O ₃ ) having a purity of 4N (99.99%) to the same ZnS. And evenly mixed.
The mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1100 ° C. The relative density of the bulk material thus obtained was 96%. The resistance value was 6.8 × 10 ⁻² Ωcm.
A target was prepared from this bulk body and a sputtering test was performed. As a result, DC sputtering was easily performed, and a sputtering target for forming a phase change type optical disk protective film mainly composed of high-density ZnS having excellent characteristics was obtained. The film had a transmittance of 95% and a refractive index of 2.2.

(Comparative Example 1)
A composition ratio of 4N (99.99%) indium oxide (In ₂ O ₃ ) powder and 4N purity silicon oxide (SiO ₂ ) to zinc sulfide (ZnS) powder having a purity of 4N (99.99%) Were uniformly mixed at a ratio of 20 mol% and 10 mol%, respectively.
This mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1000 ° C. The relative density of the bulk material thus obtained was 98%. The resistance value was 2.0 × 10 ⁻¹ Ωcm.
When a target was prepared from this bulk body and a sputtering test was performed, abnormal discharge occurred in DC sputtering. These increased the number of particles (dust generation) and nodules. Thus, under the conditions of Comparative Example 1, there was a problem that not only the uniformity and quality of the film formation deteriorated, but also the productivity was inferior.
As a sputtering target for forming a ZnS—In ₂ O ₃ —SiO ₂ phase change optical disk protective film, it was not suitable.

(Comparative Example 2)
To zinc sulfide (ZnS) powder having a purity of 4N (99.99%), ITO (In ₂ O ₃ -10 wt% SnO ₂ ) powder having a purity of 4N (99.99%) and silicon oxide having a purity of 4N (SiO _2). ) At a composition ratio of 20 mol% and 20 mol%, respectively.
The mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1100 ° C. The relative density of the bulk material thus obtained was 100%. The resistance value was 1.4 × 10 ⁻¹ Ωcm.
When a target was produced from this bulk body and a sputtering test was performed, abnormal discharge occurred during DC sputtering. These increased the number of particles (dust generation) and nodules. Thus, under the conditions of Comparative Example 2, there was a problem that not only the uniformity and quality of the film formation deteriorated but also the productivity was inferior.
It was not suitable as a sputtering target for forming a ZnS—In ₂ O ₃ —SnO ₂ —SiO ₂ phase change optical disc protective film.

( Comparative Example 3 )
Zinc sulfide (ZnS) powder is pure 4N (99.99%), purity 4N (99.99%) of the _{IZO (In 2 O 3 -5wt%} ZrO 2) powder and silicon oxide purity 4N (SiO ₂ ) At a composition ratio of 20 mol% and 20 mol%, respectively.
The mixed powder was filled in a graphite die and hot pressed in a vacuum atmosphere under conditions of a surface pressure of 200 kg / cm ² and a temperature of 1100 ° C. The relative density of the bulk material thus obtained was 99%. The resistance value was 1.0 × 10 ⁻² Ωcm.
When a target was produced from this bulk body and a sputtering test was performed, abnormal discharge occurred during DC sputtering. These increased the number of particles (dust generation) and nodules. Thus, under the conditions of Comparative Example 2, there was a problem that not only the uniformity and quality of the film formation deteriorated but also the productivity was inferior.
The sputtering target for forming a ZnS—ZrO ₂ —SiO ₂ phase change optical disc protective film was not suitable.

Table 1 shows the compositions and characteristic values of Examples 1 to 3, 5, and 6, Reference Examples 4 and 7, and Comparative Examples 1 to 3. As shown in the above examples, by containing zinc sulfide as a main component and adding a conductive oxide to this, the bulk resistance value can be lowered, DC sputtering can be performed, the characteristics as a protective film are not impaired, and sputtering is further performed. It has been found that particles and nodules that are sometimes generated can be reduced and the film thickness uniformity can be improved.
In addition, although the said Examples 1-3 , 5, and 6 show the representative example of the target composition of this invention, the same result was obtained also in the other target composition included in this invention.
On the other hand, in Comparative Examples 1 to 3, since the SiO ₂ is added as it is, the bulk resistance value decreases, but abnormal discharge occurs during sputtering, and particles (dust generation) are caused by these. ) And nodules, and the characteristics of the phase change type optical disk protective film are impaired.
From the above, it can be seen that the sputtering target mainly composed of zinc sulfide of the present invention is extremely effective as a target for forming a phase change type optical disk protective film.

The present invention makes it possible to perform DC sputtering when forming a film by sputtering, and is characterized by DC sputtering, which is easy to control, increases the deposition rate, and improves the sputtering efficiency. is there. In addition, since the refractive index can be increased, the use of this sputtering target can improve productivity, provide a material with excellent quality, and reduce the cost of an optical recording medium having an optical disk protective film. It has a remarkable effect that it can be manufactured stably.
In addition, particles (dust generation) and nodules generated during sputtering can be reduced, quality variations can be improved, mass productivity can be improved, and there are few holes and crystal grains are fine, and the relative density is 90% or higher. A sputtering target mainly composed of zinc sulfide having a density can be produced, and the characteristics as a protective film are not impaired.
Therefore, the above-mentioned sputtering target and an optical recording medium in which a phase change type optical disk protective film is formed using the target are extremely useful industrially.

Claims (14)

1 to 50 mol% of one or more kinds of conductive oxides selected from indium oxide and tin oxide, not containing silicon oxide and silicate glass , the remainder being zinc sulfide, and the target bulk resistance value being 1 Ωcm or less there are, sputtering target composed mainly of refractive index of the sputtered film to 2.0 to 2.6, zinc sulfide, characterized in that the transmittance of the sputtered film can be adjusted to a range of 85% or more. 2. The zinc sulfide according to claim 1, comprising at least one oxide selected from zirconium oxide, antimony oxide, and niobium oxide in an amount of 0.01 to 20% in terms of weight ratio with respect to the conductive oxide. Sputtering target containing as a main component . 3. The sputtering target mainly comprising zinc sulfide according to claim 1, wherein an average crystal grain size of an insulating phase or a high resistance phase existing in the target bulk is 5 μm or less. The insulating target or high resistance phase present in the target bulk contains zinc sulfide, and the sputtering target mainly comprising zinc sulfide according to any one of claims 1 to 3 . The sputtering target comprising zinc sulfide as a main component according to any one of claims 1 to 4, wherein the target is capable of direct current (DC) sputtering and is a target for forming a phase change optical disc protective film. . A relative density is 90% or more, The sputtering target which has zinc sulfide as a main component as described in any one of Claims 1-5 characterized by the above-mentioned. A relative density is 95% or more, The sputtering target which has zinc sulfide as a main component as described in any one of Claims 1-5 characterized by the above-mentioned . A relative density is 98% or more, The sputtering target which has zinc sulfide as a main component as described in any one of Claims 1-5 characterized by the above-mentioned . 1 to 50 mol% of one or more kinds of conductive oxides selected from indium oxide and tin oxide , which do not contain silicon oxide and silicate glass, and zinc sulfide as the remainder are uniformly mixed and mixed. By heating the powder to a temperature of 700 to 1200 ° C. by hot pressing or hot isostatic pressing and sintering under conditions of a surface pressure of 100 to 300 kg / cm ² , a target having a bulk resistance of 1 Ωcm or less is obtained. A method for producing a sputtering target comprising zinc sulfide as a main component, which is characterized in that it is produced. Furthermore, 0.01 to 20% of 1 or more types of oxides selected from a zirconium oxide, antimony oxide, and niobium oxide are contained by weight ratio conversion with respect to a conductive oxide, The characterized by the above-mentioned. A method for producing a sputtering target mainly composed of zinc sulfide . The average crystal grain size of the insulating phase or the high resistance phase existing in the target bulk is 5 µm or less. The sputtering target comprising zinc sulfide as a main component according to any one of claims 9 to 10, Manufacturing method . The method for producing a sputtering target mainly comprising zinc sulfide according to any one of claims 9 to 11, wherein the insulating phase or the high resistance phase present in the target bulk contains zinc sulfide . The sputtering target comprising zinc sulfide as a main component according to any one of claims 9 to 12, wherein the target is capable of direct current (DC) sputtering and is a target for forming a phase change optical disc protective film. Manufacturing method . The relative density is 90% or more, The method for producing a sputtering target mainly comprising zinc sulfide according to any one of claims 9 to 13 .