JP2009182344A - Cerium oxide abrasive and method of polishing substrate - Google Patents
Cerium oxide abrasive and method of polishing substrate Download PDFInfo
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本発明は、酸化セリウム研磨剤及び基板の研磨法を提供するものである。 The present invention provides a cerium oxide abrasive and a method for polishing a substrate.
従来、半導体装置の製造工程において、プラズマ−ＣＶＤ、低圧−ＣＶＤ等の方法で形成されるＳｉＯ２絶縁膜等無機絶縁膜層を平坦化するための化学機械研磨剤としてコロイダルシリカ系の研磨剤が一般的に検討されている。コロイダルシリカ系の研磨剤は、シリカ粒子を四塩化珪酸を熱分解する等の方法で粒成長させ、アンモニア等のアルカリ金属を含まないアルカリ溶液でｐＨ調整を行って製造している。しかしながら、この様な研磨剤は無機絶縁膜の研磨速度が充分な速度を持たず、実用化には低研磨速度という技術課題がある。 Conventionally, colloidal silica-based abrasives have been used as chemical mechanical abrasives for planarizing inorganic insulating film layers such as SiO 2 insulating films formed by methods such as plasma-CVD and low-pressure CVD in the manufacturing process of semiconductor devices. Generally considered. Colloidal silica-based abrasives are produced by growing silica particles by a method such as thermal decomposition of tetrachlorosilicic acid and adjusting the pH with an alkaline solution containing no alkali metal such as ammonia. However, such an abrasive does not have a sufficient polishing rate for the inorganic insulating film, and there is a technical problem of a low polishing rate for practical use.
一方、フォトマスク用ガラス表面研磨として、酸化セリウム研磨剤が用いられている。酸化セリウム粒子はシリカ粒子やアルミナ粒子に比べ硬度が低く、したがって研磨表面に傷が入りにくいことから仕上げ鏡面研磨に有用である。また、酸化セリウムは強い酸化剤として知られるように化学的活性な性質を有している。この利点を活かし、絶縁膜用化学機械研磨剤への適用が有用である。しかしながら、フォトマスク用ガラス表面研磨用酸化セリウム研磨剤をそのまま無機絶縁膜研磨に適用すると、そのため絶縁膜表面に目視で観察できる研磨傷が入ってしまう。 On the other hand, a cerium oxide abrasive is used for photomask glass surface polishing. Cerium oxide particles have a lower hardness than silica particles and alumina particles, and are therefore useful for finishing mirror polishing because they do not easily scratch the polished surface. Further, cerium oxide has a chemically active property as known as a strong oxidant. Taking advantage of this advantage, application to a chemical mechanical polishing agent for insulating films is useful. However, if the cerium oxide abrasive for polishing the glass surface for photomasks is applied as it is to the inorganic insulating film polishing, polishing scratches that can be visually observed will enter the insulating film surface.
本発明は、ＳｉＯ２絶縁膜等の被研磨面を傷なく研磨することが可能な酸化セリウム研磨剤及び基板の研磨法を提供するものである。 The present invention provides a cerium oxide abrasive capable of polishing a surface to be polished such as a SiO 2 insulating film without scratches and a method for polishing a substrate.
本発明の酸化セリウム研磨剤は、酸化セリウム粒子を媒体に分散させたスラリーの最大粒子径が１０００ｎｍ以下であるスラリーを含むものである。 The cerium oxide abrasive | polishing agent of this invention contains the slurry whose maximum particle diameter of the slurry which disperse | distributed the cerium oxide particle | grains to the medium is 1000 nm or less.
本発明の基板の研磨法は、上記の酸化セリウム研磨剤で所定の基板を研磨することを特徴とするものである。 The substrate polishing method of the present invention is characterized in that a predetermined substrate is polished with the above cerium oxide abrasive.
本発明は、酸化セリウム粒子を媒体に分散させたスラリーの最大粒子径が１０００ｎｍ以下であるスラリーを使用することにより、ＳｉＯ２絶縁膜等の被研磨面に傷をつけることなく研磨できることを見い出したことによりなされたものである。 The present invention has found that polishing can be performed without scratching the surface to be polished such as a SiO 2 insulating film by using a slurry in which the maximum particle size of the slurry in which cerium oxide particles are dispersed in a medium is 1000 nm or less. It was made by.
本発明の研磨剤により、ＳｉＯ２絶縁膜等の被研磨面を傷つけることなく研磨することが可能となる。 The polishing agent of the present invention enables polishing without damaging the surface to be polished such as the SiO 2 insulating film.
一般に酸化セリウムは、炭酸塩、硫酸塩、蓚酸塩等のセリウム化合物を焼成することによって得られる。ＴＥＯＳ−ＣＶＤ法等で形成されるＳｉＯ２絶縁膜は１次粒子径が大きく、かつ結晶歪が少ないほど、すなわち結晶性がよいほど高速研磨が可能であるが、研磨傷が入りやすい傾向がある。そこで、本発明で用いる酸化セリウム粒子は、あまり結晶性を上げないで作製される。また、半導体チップ研磨に使用することから、アルカリ金属およびハロゲン類の含有率は１ｐｐｍ以下に抑えることが好ましい。 In general, cerium oxide is obtained by firing a cerium compound such as carbonate, sulfate, or oxalate. The SiO 2 insulating film formed by TEOS-CVD or the like has a larger primary particle diameter and a smaller crystal distortion, that is, a higher crystallinity allows higher-speed polishing, but there is a tendency for polishing flaws to occur . Therefore, the cerium oxide particles used in the present invention are produced without increasing crystallinity. Moreover, since it uses for semiconductor chip grinding | polishing, it is preferable to suppress the content rate of an alkali metal and halogens to 1 ppm or less.
本発明において、酸化セリウム粒子を作製する方法として焼成法が使用できる。セリウム化合物の酸化温度が３００℃であることから、焼成温度は３５０℃以上９００℃以下が好ましい。 In the present invention, a firing method can be used as a method for producing cerium oxide particles. Since the oxidation temperature of the cerium compound is 300 ° C, the firing temperature is preferably 350 ° C or higher and 900 ° C or lower.
本発明における酸化セリウムスラリーは、上記の方法により製造された酸化セリウム粒子を含有する水溶液又はこの水溶液から回収した酸化セリウム粒子、水及び必要に応じて分散剤らなる組成物を分散させることによって得られる。ここで、酸化セリウム粒子の濃度には制限は無いが、懸濁液の取り扱い易さから０．５〜１０重量％の範囲が好ましい。また分散剤としては、金属イオン類を含まないものとして、アクリル酸重合体及びそのアンモニウム塩、メタクリル酸重合体及びそのアンモニウム塩、ポリビニルアルコール等の水溶性有機高分子類、ラウリル硫酸アンモニウム、ポリオキシエチレンラウリルエーテル硫酸アンモニウム等の水溶性陰イオン性界面活性剤、ポリオキシエチレンラウリルエーテル、ポリエチレングリコールモノステアレート等の水溶性非イオン性界面活性剤、モノエタノールアミン、ジエタノールアミン等の水溶性アミン類などが挙げられる。これらの分散剤の添加量は、スラリー中の粒子の分散性及び沈降防止性などから酸化セリウム粒子１００重量部に対して０．０１重量部から５重量部の範囲が好ましく、その分散効果を高めるためには分散処理時に分散機の中に粒子と同時に入れることが好ましい。 The cerium oxide slurry in the present invention is obtained by dispersing an aqueous solution containing the cerium oxide particles produced by the above method, or cerium oxide particles recovered from this aqueous solution, water and, if necessary, a composition comprising a dispersant. It is done. Here, although there is no restriction | limiting in the density | concentration of a cerium oxide particle, The range of 0.5 to 10 weight% is preferable from the ease of handling of suspension. The dispersant does not contain metal ions, and includes acrylic acid polymer and its ammonium salt, methacrylic acid polymer and its ammonium salt, water-soluble organic polymers such as polyvinyl alcohol, ammonium lauryl sulfate, and polyoxyethylene. Water-soluble anionic surfactants such as ammonium lauryl ether sulfate, water-soluble nonionic surfactants such as polyoxyethylene lauryl ether and polyethylene glycol monostearate, and water-soluble amines such as monoethanolamine and diethanolamine It is done. The amount of these dispersants added is preferably in the range of 0.01 to 5 parts by weight with respect to 100 parts by weight of the cerium oxide particles in view of the dispersibility of the particles in the slurry and the anti-settling property. In order to achieve this, it is preferable to place the particles in the disperser simultaneously with the particles during the dispersion treatment.
これらの酸化セリウム粒子を水中に分散させる方法としては、通常の撹拌機による分散処理の他に、ホモジナイザー、超音波分散機、ボールミルなどを用いることができる。特に酸化セリウム粒子を１μｍ以下の微粒子として分散させるためには、ボールミル、振動ボールミル、遊星ボールミル、媒体撹拌式ミルなどの湿式分散機を用いることが好ましい。また、スラリーのアルカリ性を高めたい場合には、分散処理時又は処理後にアンモニア水などの金属イオンを含まないアルカリ性物質を添加することができる。 As a method for dispersing these cerium oxide particles in water, a homogenizer, an ultrasonic disperser, a ball mill, or the like can be used in addition to a dispersion treatment using a normal stirrer. In particular, in order to disperse the cerium oxide particles as fine particles having a size of 1 μm or less, it is preferable to use a wet disperser such as a ball mill, a vibration ball mill, a planetary ball mill, or a medium stirring mill. When it is desired to increase the alkalinity of the slurry, an alkaline substance that does not contain metal ions such as aqueous ammonia can be added during or after the dispersion treatment.
本発明の酸化セリウム研磨剤は、上記スラリ−をそのまま使用してもよいが、Ｎ，Ｎ−ジエチルエタノ−ルアミン、Ｎ，Ｎ−ジメチルエタノ−ルアミン、アミノエチルエタノ−ルアミン等の添加剤を添加して研磨剤とすることができる。 The cerium oxide abrasive of the present invention may use the above slurry as it is, but an additive such as N, N-diethylethanolamine, N, N-dimethylethanolamine, aminoethylethanolamine is added. Thus, an abrasive can be obtained.
本発明の酸化セリウム研磨剤が使用される無機絶縁膜の作製方法として、定圧ＣＶＤ法、プラズマＣＶＤ法等が挙げられる。定圧ＣＶＤ法によるＳｉＯ２絶縁膜形成は、Ｓｉ源としてモノシラン：ＳｉＨ４、酸素源として酸素：Ｏ２を用いる。このＳｉＨ４−Ｏ２系酸化反応を４００℃程度以下の低温で行わせることにより得られる。高温リフローによる表面平坦化を図るためにリン：Ｐをドープするときには、ＳｉＨ４−Ｏ２−ＰＨ３系反応ガスを用いることが好ましい。プラズマＣＶＤ法は、通常の熱平衡下では高温を必要とする化学反応が低温でできる利点を有する。プラズマ発生法には、容量結合型と誘導結合型の２つが挙げられる。反応ガスとしては、Ｓｉ源としてＳｉＨ４、酸素源としてＮ２Ｏを用いたＳｉＨ４−Ｎ２Ｏ系ガスとテトラエトキシシラン（ＴＥＯＳ）をＳｉ源に用いたＴＥＯＳ−Ｏ２系ガス（ＴＥＯＳ−プラズマＣＶＤ法）が挙げられる。基板温度は２５０℃〜４００℃、反応圧力は６７〜４００Ｐａの範囲が好ましい。このように、本発明のＳｉＯ２絶縁膜にはリン、ホウ素等の元素がド−プされていても良い。 Examples of a method for manufacturing an inorganic insulating film in which the cerium oxide abrasive of the present invention is used include a constant pressure CVD method and a plasma CVD method. In the formation of the SiO 2 insulating film by the constant pressure CVD method, monosilane: SiH 4 is used as the Si source, and oxygen: O 2 is used as the oxygen source. It can be obtained by performing this SiH 4 —O 2 -based oxidation reaction at a low temperature of about 400 ° C. or less. When doping phosphorus: P in order to achieve surface flattening by high-temperature reflow, it is preferable to use a SiH 4 —O 2 —PH 3 -based reactive gas. The plasma CVD method has an advantage that a chemical reaction requiring a high temperature can be performed at a low temperature under normal thermal equilibrium. There are two plasma generation methods, capacitive coupling type and inductive coupling type. The reaction as a gas, SiH 4 as an Si source, an oxygen source as N 2 O was used was SiH 4 -N 2 O-based gas and TEOS-O 2 based gas using tetraethoxysilane (TEOS) in an Si source (TEOS- Plasma CVD method). The substrate temperature is preferably 250 to 400 ° C., and the reaction pressure is preferably 67 to 400 Pa. Thus, elements such as phosphorus and boron may be doped in the SiO 2 insulating film of the present invention.
所定の基板として、半導体基板すなわち回路素子と配線パターンが形成された段階の半導体基板、回路素子が形成された段階の半導体基板等の半導体基板上にＳｉＯ２絶縁膜層が形成された基板が使用できる。このような半導体基板上に形成されたＳｉＯ２絶縁膜層を上記酸化セリウム研磨剤で研磨することによって、ＳｉＯ２絶縁膜層表面の凹凸を解消し、半導体基板全面に渡って平滑な面とする。ここで、研磨する装置としては、半導体基板を保持するホルダーと研磨布（パッド）を貼り付けた（回転数が変更可能なモータ等を取り付けてある）定盤を有する一般的な研磨装置が使用できる。研磨布としては、一般的な不織布、発泡ポリウレタン、多孔質フッ素樹脂などが使用でき、特に制限がない。また、研磨布にはスラリーが溜まる様な溝加工を施すことが好ましい。研磨条件には制限はないが、定盤の回転速度は半導体が飛び出さない様に１００ｒｐｍ以下の低回転が好ましく、半導体基板にかける圧力は研磨後に傷が発生しない様に１ｋｇ／ｃｍ２以下が好ましい。研磨している間、研磨布にはスラリーをポンプ等で連続的に供給する。この供給量には制限はないが、研磨布の表面が常にスラリーで覆われていることが好ましい。 As the predetermined substrate, a semiconductor substrate, that is, a semiconductor substrate in which a circuit element and a wiring pattern are formed, or a substrate in which a SiO 2 insulating film layer is formed on a semiconductor substrate such as a semiconductor substrate in which a circuit element is formed is used. it can. By polishing the SiO 2 insulating film layer formed on such a semiconductor substrate with the cerium oxide abrasive, unevenness on the surface of the SiO 2 insulating film layer is eliminated and a smooth surface is formed over the entire surface of the semiconductor substrate. . Here, as a polishing apparatus, a general polishing apparatus having a surface plate with a holder for holding a semiconductor substrate and a polishing cloth (pad) attached (a motor etc. capable of changing the number of rotations) is used. it can. As an abrasive cloth, a general nonwoven fabric, a polyurethane foam, a porous fluororesin, etc. can be used, and there is no restriction | limiting in particular. Further, it is preferable that the polishing cloth is subjected to groove processing so that slurry is accumulated. The polishing conditions are not limited, but the rotation speed of the surface plate is preferably low rotation of 100 rpm or less so that the semiconductor does not jump out, and the pressure applied to the semiconductor substrate is 1 kg / cm 2 or less so that no scratches are generated after polishing. preferable. During polishing, slurry is continuously supplied to the polishing cloth with a pump or the like. Although there is no restriction | limiting in this supply amount, it is preferable that the surface of polishing cloth is always covered with the slurry.
研磨終了後の半導体基板は、流水中で良く洗浄後、スピンドライヤ等を用いて半導体基板上に付着した水滴を払い落としてから乾燥させることが好ましい。このようにして平坦化されたＳｉＯ２絶縁膜層の上に、第２層目のアルミニウム配線を形成し、その配線間および配線上に再度上記方法によりＳｉＯ２絶縁膜を形成後、上記酸化セリウム研磨剤を用いて研磨することによって、絶縁膜表面の凹凸を解消し、半導体基板全面に渡って平滑な面とする。この工程を所定数繰り返すことにより、所望の層数の半導体を製造する。 The semiconductor substrate after the polishing is preferably washed in running water, and then dried after removing water droplets adhering to the semiconductor substrate using a spin dryer or the like. A second-layer aluminum wiring is formed on the thus planarized SiO 2 insulating film layer, and the SiO 2 insulating film is formed again between the wirings and on the wiring by the above method, and then the cerium oxide. By polishing with an abrasive, unevenness on the surface of the insulating film is eliminated, and a smooth surface is formed over the entire surface of the semiconductor substrate. By repeating this process a predetermined number of times, a desired number of semiconductor layers are manufactured.
本発明の酸化セリウム研磨剤は、半導体基板に形成されたＳｉＯ２絶縁膜だけでなく、所定の配線を有する配線板に形成されたＳｉＯ２絶縁膜、ガラス、窒化ケイ素等の無機絶縁膜、フォトマスク・レンズ・プリズムとうの光学ガラス、ＩＴＯ等の無機導電膜、ガラス及び結晶質材料で構成される光集積回路・光スイッチング素子・光導波路、光ファイバ−の端面、シンチレ−タ等の光学用単結晶、固体レ−ザ単結晶、青色レ−ザ用ＬＥＤサファイア基板、ＳｉＣ、ＧａＰ、ＧａＡＳ等の半導体単結晶、磁気ディスク用ガラス基板、磁気ヘッド等を研磨するために使用される。このように本発明において所定の基板とは、ＳｉＯ２絶縁膜が形成された半導体基板、ＳｉＯ２絶縁膜が形成された配線板、ガラス、窒化ケイ素等の無機絶縁膜、フォトマスク・レンズ・プリズムとうの光学ガラス、ＩＴＯ等の無機導電膜、ガラス及び結晶質材料で構成される光集積回路・光スイッチング素子・光導波路、光ファイバ−の端面、シンチレ−タ等の光学用単結晶、固体レ−ザ単結晶、青色レ−ザ用ＬＥＤサファイア基板、ＳｉＣ、ＧａＰ、ＧａＡＳ等の半導体単結晶、磁気ディスク用ガラス基板、磁気ヘッド等を含む。 Cerium oxide abrasive of the present invention is not only SiO 2 insulating film formed on a semiconductor substrate, SiO 2 insulating film formed on the wiring board having a predetermined wiring, glass, inorganic insulating films such as silicon nitride, Photo Optical glass such as optical glass such as mask, lens, prism, inorganic conductive film such as ITO, glass and crystalline material, optical switching element, optical waveguide, end face of optical fiber, scintillator, etc. It is used to polish single crystals, solid laser single crystals, LED sapphire substrates for blue lasers, semiconductor single crystals such as SiC, GaP, and GaAS, glass substrates for magnetic disks, magnetic heads, and the like. The predetermined substrate in the present invention as described above, SiO 2 semiconductor substrate on which an insulating film is formed, SiO 2 insulating film is formed wiring board, glass, inorganic insulating films such as silicon nitride, photomask lenses and prisms Optical optical circuits, inorganic conductive films such as ITO, optical integrated circuits / optical switching elements / optical waveguides composed of glass and crystalline materials, optical fiber end faces, optical single crystals such as scintillators, solid state lasers, etc. -The single crystal, LED sapphire substrate for blue laser, semiconductor single crystal such as SiC, GaP, GaAS, etc., glass substrate for magnetic disk, magnetic head, etc.
（酸化セリウム粒子の作製：その１）
炭酸セリウム水和物（９９．９％）６００ｇを白金製の容器に入れ、４００℃で２時間空気中で焼成することにより黄白色の粉末を得た。この粉末をＸ線回折法で相同定を行ったところ酸化セリウムであることを確認した。透過型電子顕微鏡で観察したところ粒子は５ｎｍから１０ｎｍの一次粒子が全数の９０％以上であった。
(Preparation of cerium oxide particles: Part 1)
600 g of cerium carbonate hydrate (99.9%) was placed in a platinum container and baked in air at 400 ° C. for 2 hours to obtain a yellowish white powder. When this powder was phase-identified by X-ray diffraction, it was confirmed to be cerium oxide. When observed with a transmission electron microscope, the primary particles of 5 to 10 nm were 90% or more of the total number.
（酸化セリウム粒子の作製：その２）
炭酸セリウム水和物（９９．９％）６００ｇを白金製の容器に入れ、６００℃で２時間空気中で焼成することにより黄白色の粉末を得た。この粉末をＸ線回折法で相同定を行ったところ酸化セリウムであることを確認した。透過型電子顕微鏡で観察したところ粒子は１０ｎｍを超えかつ１００ｎｍ未満の一次粒子が全数の９０％以上であった。
(Preparation of cerium oxide particles: Part 2)
600 g of cerium carbonate hydrate (99.9%) was placed in a platinum container and calcined in air at 600 ° C. for 2 hours to obtain a yellowish white powder. When this powder was phase-identified by X-ray diffraction, it was confirmed to be cerium oxide. When observed with a transmission electron microscope, the number of primary particles exceeding 10 nm and less than 100 nm was 90% or more of the total number.
（酸化セリウム粒子の作製：その３）
炭酸セリウム水和物（９９．９％）６００ｇを白金製の容器に入れ、８００℃で２時間空気中で焼成することにより黄白色の粉末を得た。この粉末をＸ線回折法で相同定を行ったところ酸化セリウムであることを確認した。透過型電子顕微鏡で観察したところ粒子は１００ｎｍから３００ｎｍの一次粒子が全数の９０％以上であった。
(Preparation of cerium oxide particles: Part 3)
600 g of cerium carbonate hydrate (99.9%) was placed in a platinum container and calcined in air at 800 ° C. for 2 hours to obtain a yellowish white powder. When this powder was phase-identified by X-ray diffraction, it was confirmed to be cerium oxide. When observed with a transmission electron microscope, the primary particles of 100 to 300 nm were 90% or more of the total number.
（酸化セリウムスラリーの作製）
上記３種類の酸化セリウム粉末８０ｇを脱イオン水８００ｇ中に分散して、これにポリアクリル酸アンモニウム塩８ｇを添加後、遊星ボールミル（フリッチェ社製、商品名Ｐ−５型）を用いて２３００ｒｐｍで３０分間分散処理を施すことにより、乳白色の酸化セリウムスラリーを得た。このスラリーｐＨはそれぞれ９．７と９．１と９．２であった。スラリーの粒度分布を調べたところ（Ｍａｓｔｅｒ Ｓｉｚｅｒ製）、平均粒子径がそれぞれ３００ｎｍと２６０ｎｍと２７０ｎｍ小さく、その半値幅もともに３００ｎｍと比較的分布も狭いことがわかった。また、最大粒子径はそれぞれ９００、８００、７００ｎｍと１ミクロン以上の大きな凝集体が含まれていないことを確認した。
(Preparation of cerium oxide slurry)
80 g of the above three kinds of cerium oxide powder is dispersed in 800 g of deionized water, 8 g of polyacrylic acid ammonium salt is added thereto, and then it is used at 2300 rpm using a planetary ball mill (manufactured by Frichche, trade name P-5). By carrying out a dispersion treatment for 30 minutes, a milky white cerium oxide slurry was obtained. The slurry pH was 9.7, 9.1 and 9.2, respectively. When the particle size distribution of the slurry was examined (manufactured by Master Sizer), it was found that the average particle sizes were 300 nm, 260 nm, and 270 nm, respectively, and the half-value widths were both 300 nm and the distribution was relatively narrow. Further, it was confirmed that large aggregates having a maximum particle size of 900, 800, 700 nm and 1 micron or larger were not included.
（絶縁膜層の研磨）
保持する基板取り付け用の吸着パッドを貼り付けたホルダーにＴＥＯＳ−プラズマＣＶＤ法で作製したＳｉＯ２絶縁膜を形成させたＳｉウエハをセットし、多孔質ウレタン樹脂製の研磨パッドを貼り付けた定盤上に絶縁膜面を下にしてホルダーを載せ、さらに加工加重が１６０ｇ／ｃｍ２になるように重しを載せた。定盤上に上記３種類の酸化セリウムスラリー（固形分：２．５ｗｔ％）を３５ｃｃ／ｍｉｎの速度で滴下しながら、定盤を３０ｒｐｍで３分間回転させ、絶縁膜を研磨した。研磨後ウエハをホルダーから取り外して、流水で良く洗浄後、超音波洗浄機によりさらに２０分間洗浄した。洗浄後、ウエハをスピンドライヤーで水滴を除去し、１２０℃の乾燥機で１０分間乾燥させた。光干渉式膜厚測定装置を用いて、研磨前後の膜厚変化を測定した結果、この研磨によりスラリー作製その１、２、３のスラリはそれぞれ２００ｎｍ、２４０ｎｍ、６４０ｎｍの絶縁膜が削られた。それぞれのスラリーの研磨後、ウエハ全面に渡って均一の厚みになっていることがわかった。また、目視では絶縁膜表面には傷が見られなかった。
(Polishing the insulating film layer)
A surface plate on which a Si wafer on which a SiO 2 insulating film produced by TEOS-plasma CVD method is formed is set in a holder on which a holding pad for attaching a substrate to be held is attached, and a polishing pad made of porous urethane resin is attached. A holder was placed thereon with the insulating film face down, and a weight was placed so that the processing load was 160 g / cm 2 . While the above three kinds of cerium oxide slurry (solid content: 2.5 wt%) were dropped on the surface plate at a speed of 35 cc / min, the surface plate was rotated at 30 rpm for 3 minutes to polish the insulating film. After polishing, the wafer was removed from the holder, washed thoroughly with running water, and further washed with an ultrasonic cleaner for 20 minutes. After washing, water droplets were removed from the wafer with a spin dryer, and the wafer was dried with a dryer at 120 ° C. for 10 minutes. As a result of measuring the film thickness change before and after polishing using an optical interference type film thickness measuring apparatus, the slurry of the slurry preparations 1, 2, and 3 were scraped by 200 nm, 240 nm, and 640 nm, respectively, by this polishing. After polishing each slurry, it was found that the thickness was uniform over the entire wafer surface. In addition, no scratch was found on the surface of the insulating film by visual observation.
比較例
炭酸セリウム水和物を３５０℃で焼成により粉末を合成した。Ｘ線回折法により同定したところ酸化セリウムであることがわかった。実施例と同一の方法でスラリーを作製した。そのｐＨは９．５と実施例のスラリーと同程度であったが、スラリーの粒度分布を調べたところ（Ｍａｓｔｅｒ Ｓｉｚｅｒ製）、平均粒子径が５００ｎｍと大きく、その半値幅もともに６００ｎｍと比較的分布がブロードであることがわかった。また最大粒子径は１２００ｎｍと１ミクロン以上の大きい凝集体が含まれていた。また実施例と同様にＴＥＯＳ−ＣＶＤ法で作製したＳｉＯ２絶縁膜を形成させたＳｉウエハについて研磨を行った。研磨条件は上記実施例と同一である。その結果、３分間の研磨により２００ｎｍの絶縁膜層が削れたが、目視で研磨傷が観察された。
Comparative Example A powder was synthesized by firing cerium carbonate hydrate at 350 ° C. As a result of identification by X-ray diffraction, it was found to be cerium oxide. A slurry was prepared in the same manner as in the example. The pH was 9.5, which was about the same as that of the slurry of the example. When the particle size distribution of the slurry was examined (manufactured by Master Sizer), the average particle size was as large as 500 nm, and the half width was 600 nm. The distribution was found to be broad. The maximum particle size was 1200 nm, and large aggregates of 1 micron or more were included. Further, similarly to the example, the Si wafer on which the SiO 2 insulating film produced by the TEOS-CVD method was formed was polished. The polishing conditions are the same as in the above example. As a result, the 200 nm insulating film layer was shaved by polishing for 3 minutes, but polishing scratches were observed visually.
Claims (6)
さらに分散剤を含み、前記分散剤が、アクリル酸重合体及びそのアンモニウム塩のいずれかであり、ＳｉＯ２絶縁膜が形成された半導体基板研磨用の酸化セリウム研磨剤。 A cerium oxide abrasive comprising a slurry in which only cerium oxide particles are dispersed in a medium as abrasive grains, wherein the cerium oxide particles are dispersed as particles having a maximum particle size of 1000 nm or less in the slurry, and cerium oxide polishing 0.5 to 10% by weight contained in the agent,
A cerium oxide abrasive for polishing a semiconductor substrate, further comprising a dispersant, wherein the dispersant is either an acrylic acid polymer or an ammonium salt thereof, and an SiO 2 insulating film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009114933A JP2009182344A (en) | 1996-09-30 | 2009-05-11 | Cerium oxide abrasive and method of polishing substrate |
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| JP25877596 | 1996-09-30 | ||
| JP2009114933A JP2009182344A (en) | 1996-09-30 | 2009-05-11 | Cerium oxide abrasive and method of polishing substrate |
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| Application Number | Title | Priority Date | Filing Date |
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| JP20786697A Division JPH10154673A (en) | 1996-09-30 | 1997-08-01 | Cerium oxide abrasive material and substrate polishing method |
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| JP2009182344A true JP2009182344A (en) | 2009-08-13 |
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| JP20786697A Withdrawn JPH10154673A (en) | 1996-09-30 | 1997-08-01 | Cerium oxide abrasive material and substrate polishing method |
| JP2009114933A Pending JP2009182344A (en) | 1996-09-30 | 2009-05-11 | Cerium oxide abrasive and method of polishing substrate |
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| Application Number | Title | Priority Date | Filing Date |
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| JP20786697A Withdrawn JPH10154673A (en) | 1996-09-30 | 1997-08-01 | Cerium oxide abrasive material and substrate polishing method |
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| JP (2) | JPH10154673A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8083820B2 (en) * | 2006-12-22 | 2011-12-27 | 3M Innovative Properties Company | Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same |
| KR20190099490A (en) * | 2016-12-22 | 2019-08-27 | 일루미나, 인코포레이티드 | Flow cell package and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4604727B2 (en) * | 1998-12-25 | 2011-01-05 | 日立化成工業株式会社 | Additive for CMP abrasives |
| JP4538109B2 (en) * | 1999-02-18 | 2010-09-08 | 株式会社トッパンＴｄｋレーベル | Chemical mechanical polishing composition |
| EP2394960A3 (en) * | 1999-05-28 | 2013-03-13 | Hitachi Chemical Co., Ltd. | Method for producing cerium oxide |
| JP4544379B2 (en) * | 1999-06-28 | 2010-09-15 | 日産化学工業株式会社 | Glass hard disk abrasive |
| JP2002047482A (en) * | 2000-08-01 | 2002-02-12 | Rodel Nitta Co | Production method for polishing slurry |
| US20080219130A1 (en) * | 2003-08-14 | 2008-09-11 | Mempile Inc. C/O Phs Corporate Services, Inc. | Methods and Apparatus for Formatting and Tracking Information for Three-Dimensional Storage Medium |
| KR101028622B1 (en) | 2005-10-19 | 2011-04-11 | 히다치 가세고교 가부시끼가이샤 | Cerium oxide slurry, cerium oxide polishing liquid, and method for polishing substrate by using those |
| JP5627108B2 (en) * | 2011-03-28 | 2014-11-19 | 日揮触媒化成株式会社 | Abrasive |
-
1997
- 1997-08-01 JP JP20786697A patent/JPH10154673A/en not_active Withdrawn
-
2009
- 2009-05-11 JP JP2009114933A patent/JP2009182344A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8083820B2 (en) * | 2006-12-22 | 2011-12-27 | 3M Innovative Properties Company | Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same |
| KR20190099490A (en) * | 2016-12-22 | 2019-08-27 | 일루미나, 인코포레이티드 | Flow cell package and its manufacturing method |
| JP2020507914A (en) * | 2016-12-22 | 2020-03-12 | イラミーナ インコーポレーテッド | Flow cell package and method of manufacturing the same |
| JP7236999B2 (en) | 2016-12-22 | 2023-03-10 | イラミーナ インコーポレーテッド | Flow cell package and manufacturing method thereof |
| US11846580B2 (en) | 2016-12-22 | 2023-12-19 | Illumina, Inc. | Flow cell package and method for making the same |
| KR102656824B1 (en) * | 2016-12-22 | 2024-04-11 | 일루미나, 인코포레이티드 | Flow cell package and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10154673A (en) | 1998-06-09 |
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