JP2009170864A - Composite semiconductor device - Google Patents

Composite semiconductor device Download PDF

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JP2009170864A
JP2009170864A JP2008162766A JP2008162766A JP2009170864A JP 2009170864 A JP2009170864 A JP 2009170864A JP 2008162766 A JP2008162766 A JP 2008162766A JP 2008162766 A JP2008162766 A JP 2008162766A JP 2009170864 A JP2009170864 A JP 2009170864A
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electrode
semiconductor layer
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semiconductor device
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JP5333893B2 (en
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Akihiko Matsuzaki
明彦 松崎
Koji Ikeda
孝滋 池田
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Sanken Electric Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a composite semiconductor device having a semiconductor element and a sensor element formed on the same semiconductor layer and capable of detecting the temperature of the semiconductor element in a wide temperature region. <P>SOLUTION: In this composite semiconductor device, an FRD and a plurality of SBDs are formed on a first semiconductor layer 1. In the composite semiconductor device, the FRD11 is composed of the first semiconductor layer 1, a P-type second semiconductor layer 2 formed on the first semiconductor layer 1 in an island-like shape, and having a PN junction formed with the first semiconductor layer 1, and a first electrode 5 formed on the second semiconductor layer 2 and electrically connected to the semiconductor layer 2; the SBD 12a is formed with a first electrode 5 forming a Schottky junction between the first semiconductor layer 1 and itself; the SBD 12b is separated from the SBD 12a, and formed with a second electrode 6 forming a Schottky junction between the first semiconductor layer 1 and itself; and the first electrode 5 and the second electrode 6 are formed of materials having leakage current temperature characteristics different from each other. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、スイッチング電源装置の過熱保護回路等に使用され、同一の半導体層上に、半導体素子領域と温度検出用のセンサ素子領域とが形成された複合半導体装置に関する。
The present invention relates to a composite semiconductor device that is used in an overheat protection circuit or the like of a switching power supply device, in which a semiconductor element region and a sensor element region for temperature detection are formed on the same semiconductor layer.

スイッチング電源装置等に用いられる整流素子として機能するダイオードや、スイッチング素子として機能するトランジスタ等の半導体素子は、半導体素子自身の動作及び通電により発熱し、発熱による誤作動や素子破損を招き、電源装置の発煙、発火を引き起こす場合がある。そこで、これらを防止する手段として、ダイオードをセンサ素子として使用した保護回路を設けた電源装置が、特許文献１に開示されている。
A semiconductor element such as a diode functioning as a rectifying element or a transistor functioning as a switching element used in a switching power supply device or the like generates heat due to the operation and energization of the semiconductor element itself, causing malfunction or element damage due to the heat generation, and the power supply device May cause smoke and fire. Therefore, as means for preventing these problems, Patent Document 1 discloses a power supply device provided with a protection circuit using a diode as a sensor element.

図６は、特許文献１に開示される従来のフライバック型スイッチング電源装置の回路構成図である。
直流電源ＤＣから入力される直流電力を、スイッチング素子Ｑを図示しない制御回路によりオン／オフ制御させることで、トランスＴの一次巻線Ｐに印加する。
スイッチング素子Ｑがオンする間、トランスＴの一次巻線Ｐに磁気エネルギーが蓄えられ、スイッチング素子Ｑがオフする間、二次巻線Ｓから磁気エネルギーを放出する。
放出された磁気エネルギーは、ダイオードＤ１と平滑コンデンサＣとによって整流平滑化され、出力端子ＯＵＴを介して図示しない負荷に供給される。
FIG. 6 is a circuit configuration diagram of a conventional flyback switching power supply device disclosed in Patent Document 1. In FIG.
The DC power input from the DC power source DC is applied to the primary winding P of the transformer T by controlling the switching element Q to be turned on / off by a control circuit (not shown).
Magnetic energy is stored in the primary winding P of the transformer T while the switching element Q is turned on, and magnetic energy is released from the secondary winding S while the switching element Q is turned off.
The released magnetic energy is rectified and smoothed by the diode D1 and the smoothing capacitor C and supplied to a load (not shown) via the output terminal OUT.

従来のスイッチング電源装置のスイッチング動作時における発熱は、ダイオードＤ１において最も大きいため、従来のスイッチング電源装置では、センサ素子としてダイオードＤ２とダイオードＤ１とを一体化した複合部品を設置している。この複合部品は、トランスＴの二次巻線Ｓの一端と出力端子＋ＯＵＴとの間に接続され、ダイオードＤ２は、トランスＴの二次巻線Ｓの一端と過熱検出回路ＴＤＣとの間に接続される。ダイオードＤ１の発熱は、過熱検出回路ＴＤＣを介して制御回路にフィードバックされ、制御回路は、ダイオードＤ１の発熱を低減させるようにスイッチング素子Ｑを制御する。
Since the heat generated during the switching operation of the conventional switching power supply device is the largest in the diode D1, the conventional switching power supply device is provided with a composite part in which the diode D2 and the diode D1 are integrated as a sensor element. This composite component is connected between one end of the secondary winding S of the transformer T and the output terminal + OUT, and the diode D2 is connected between one end of the secondary winding S of the transformer T and the overheat detection circuit TDC. Is done. The heat generation of the diode D1 is fed back to the control circuit via the overheat detection circuit TDC, and the control circuit controls the switching element Q so as to reduce the heat generation of the diode D1.

ダイオードＤ２のように温度上昇を検出するセンサ素子は、ＳＢＤ（Ｓｃｈｏｔｔｋｙ Ｂａｒｒｉｅｒ Ｄｉｏｄｅ）やＰＮ接合ダイオード等が一般的であり、温度検出の原理には、ＳＢＤの漏れ電流ＩＲ特性や、ＰＮ接合ダイオードの順方向電流特性などが多く利用されている。
図５は、ＳＢＤのＩＲ温度特性の図であり、モリブデンＭｏ及びパラジウムＰｄからなるショットキー電極を形成したときのＩＲを示し、ＳＢＤのＩＲが周囲温度に対して優れた線形性を有することを示す図である。
A sensor element that detects a temperature rise like the diode D2 is generally a SBD (Schottky Barrier Diode), a PN junction diode, or the like. The temperature detection principle includes the SBD leakage current IR characteristics, the PN junction diode Many forward current characteristics are used.
FIG. 5 is a diagram of IR temperature characteristics of SBD, showing IR when a Schottky electrode made of molybdenum Mo and palladium Pd is formed, and that IR of SBD has excellent linearity with respect to ambient temperature. FIG.

同一の半導体層上に、半導体素子であるＦＲＤ（Ｆａｓｔ Ｒｅｃｏｖｅｒｙ Ｄｉｏｄｅ）１１と、センサ素子であるＳＢＤ（Ｓｃｈｏｔｔｋｙ Ｂａｒｒｉｅｒ Ｄｉｏｄｅ）１２と、が並存するように形成された従来の複合半導体装置を図７に示す。
ＦＲＤ１１が、Ｎ型の第１半導体層１と、第１半導体層１上に島状に形成され、且つ、第１半導体層１とＰＮ接合が形成されるＰ型の第２半導体層２と、第１半導体層１と第２半導体層２との各表面上に形成された絶縁膜４と、第２半導体層２上における絶縁膜４の開口部に形成され第２半導体層２と電気的に接続される第３電極７と、第１半導体層１と電気的に接続される第４電極８と、で構成され、
ＳＢＤ１２が、第１半導体層１と、第１半導体層１上に島状に形成されたＰ型の第３半導体層３と、第１半導体層１と第３半導体層３との各表面上に形成された絶縁膜４と、第１半導体層１及び第３半導体層３上における絶縁膜４の開口部に形成され且つ第１半導体層１との間にショットキー接合が形成される第１電極５と、第１半導体層１と電気的に接続される第４電極８と、で構成されている。
FIG. 7 shows a conventional composite semiconductor device in which an FRD (Fast Recovery Diode) 11 that is a semiconductor element and an SBD (Schottky Barrier Diode) 12 that is a sensor element coexist on the same semiconductor layer. Show.
FRD 11 is an N-type first semiconductor layer 1, and a P-type second semiconductor layer 2 formed in an island shape on the first semiconductor layer 1 and having a PN junction formed with the first semiconductor layer 1. An insulating film 4 formed on each surface of the first semiconductor layer 1 and the second semiconductor layer 2, and formed in an opening of the insulating film 4 on the second semiconductor layer 2 and electrically connected to the second semiconductor layer 2 The third electrode 7 to be connected and the fourth electrode 8 electrically connected to the first semiconductor layer 1,
The SBD 12 is formed on each surface of the first semiconductor layer 1, a P-type third semiconductor layer 3 formed in an island shape on the first semiconductor layer 1, and the first semiconductor layer 1 and the third semiconductor layer 3. The formed insulating film 4 and the first electrode formed in the opening of the insulating film 4 on the first semiconductor layer 1 and the third semiconductor layer 3 and forming a Schottky junction with the first semiconductor layer 1 5 and a fourth electrode 8 electrically connected to the first semiconductor layer 1.

従来の複合半導体装置において、ＦＲＤ１１の温度上昇は、主に第１半導体層１を介した熱伝導によって、ＳＢＤ１２に伝わり、ＳＢＤ１２の漏れ電流ＩＲが変化することによって検出される。このようにして、半導体素子の温度上昇が第１半導体層１を介して検出される複合半導体装置の例が、特許文献２で開示されている。
In the conventional composite semiconductor device, the temperature rise of the FRD 11 is transmitted to the SBD 12 mainly by heat conduction through the first semiconductor layer 1 and is detected by changing the leakage current IR of the SBD 12. An example of a composite semiconductor device in which a temperature increase of a semiconductor element is detected through the first semiconductor layer 1 in this way is disclosed in Patent Document 2.

さらに、従来の複合半導体装置において、半導体素子の発熱に対してより良好な保護機能を付加し、信頼性を向上するため、第１半導体層１上に複数のセンサ素子が配置された複合半導体装置の例が、特許文献３で開示されている。

再表ＷＯ２００４／０１７５０７ 特開２００６−３２４４１２ 特公平６−９３４８５ Further, in the conventional composite semiconductor device, a composite semiconductor device in which a plurality of sensor elements are arranged on the first semiconductor layer 1 in order to add a better protection function against heat generation of the semiconductor elements and improve reliability. An example of this is disclosed in Patent Document 3.

Table WO2004 / 017507 JP 2006-324412 A JP 6-93485

このような温度検出用のセンサ素子は、半導体素子の温度上昇を検出し、発熱による誤作動や素子破損から半導体素子を保護するため、高い温度検出精度と安定性とが要求される。しかしながら、図５に示すように、ＳＢＤの漏れ電流ＩＲの温度特性は優れた線形性を有するが、高温領域において温度特性の線形性が劣化する場合があるため、高温領域における温度検出精度が不安定になるという欠点があった。
Such a sensor element for temperature detection is required to have high temperature detection accuracy and stability in order to detect a temperature rise of the semiconductor element and protect the semiconductor element from malfunction or damage due to heat generation. However, as shown in FIG. 5, the temperature characteristic of the leakage current IR of the SBD has excellent linearity, but the linearity of the temperature characteristic may deteriorate in the high temperature region, so the temperature detection accuracy in the high temperature region is poor. There was a drawback of becoming stable.

そこで、本発明の目的は、同一の半導体層上に、半導体素子と、半導体素子の温度検出用のセンサ素子と、が並存するように形成され、幅広い温度領域において精度良く半導体素子の温度を検出でき、電源装置の過熱保護回路に用いることができる複合半導体装置を提供することにある。
Accordingly, an object of the present invention is to form a semiconductor element and a sensor element for detecting the temperature of the semiconductor element side by side on the same semiconductor layer, and detect the temperature of the semiconductor element with high accuracy in a wide temperature range. An object of the present invention is to provide a composite semiconductor device that can be used for an overheat protection circuit of a power supply device.

上記課題を解決し上記目的を達成するために、請求項１に係る本発明の複合半導体装置は、パワー半導体素子として機能する半導体素子領域と、前記半導体素子領域の温度上昇を検出するセンサとして機能する複数のセンサ素子領域と、を半導体基体に備えた複合半導体装置において、
前記複数のセンサ素子領域は、前記半導体基体とショットキー接合を形成する第１電極を有する第１センサ素子と、前記第１電極と離間し、前記半導体基体とショットキー接合を形成し、周囲温度に対する漏れ電流が前記第１電極と異なる第２電極を有する第２センサ素子と、からなることを特徴とする。
In order to solve the above problems and achieve the above object, a composite semiconductor device of the present invention according to claim 1 functions as a semiconductor element region functioning as a power semiconductor element and a sensor for detecting a temperature rise in the semiconductor element region. In a composite semiconductor device comprising a plurality of sensor element regions and a semiconductor substrate,
The plurality of sensor element regions include a first sensor element having a first electrode that forms a Schottky junction with the semiconductor substrate, and is spaced apart from the first electrode, forms a Schottky junction with the semiconductor substrate, and has an ambient temperature. And a second sensor element having a second electrode different from the first electrode.

さらに、上記課題を解決し上記目的を達成するために、請求項２に係る本発明の複合半導体装置は、第１電極はＭｏから構成され、第２電極はＰｄから構成されていることを特徴とする。
さらに、上記課題を解決し上記目的を達成するために、請求項３に係る本発明の複合半導体装置は、低温領域と高温領域とでセンサ素子を切り替えて温度検出することを特徴とする。
さらに、上記課題を解決し上記目的を達成するために、請求項３に係る本発明の複合半導体装置は、パワー半導体素子として機能する半導体素子領域と、前記半導体素子領域の温度上昇を検出するセンサとして機能する複数のセンサ素子領域と、を半導体基体に備えた複合半導体装置において、スイッチング電源装置の整流素子として使用されることを特徴とする。
Furthermore, in order to solve the above problems and achieve the above object, the composite semiconductor device of the present invention according to claim 2 is characterized in that the first electrode is made of Mo and the second electrode is made of Pd. And
Furthermore, in order to solve the above problems and achieve the above object, the composite semiconductor device of the present invention according to claim 3 is characterized in that the temperature is detected by switching the sensor element between the low temperature region and the high temperature region.
Furthermore, in order to solve the above problems and achieve the above object, a composite semiconductor device according to a third aspect of the present invention includes a semiconductor element region functioning as a power semiconductor element, and a sensor for detecting a temperature rise in the semiconductor element region. In a composite semiconductor device provided with a plurality of sensor element regions functioning as a semiconductor substrate, it is used as a rectifying element of a switching power supply device.

各請求項の発明によれば、幅広い温度領域において、精度良く半導体素子の温度を検出できる。
According to the invention of each claim, the temperature of the semiconductor element can be accurately detected in a wide temperature range.

次に、図１〜３を参照して本発明の実施形態に係わる複合半導体装置の一例を説明する。
Next, an example of the composite semiconductor device according to the embodiment of the present invention will be described with reference to FIGS.

図１は本発明の第１実施例の複合半導体装置を示す断面図である。図１において、複合半導体装置は、同一の半導体層上に、半導体素子であるＦＲＤ（Ｆａｓｔ Ｒｅｃｏｖｅｒｙ Ｄｉｏｄｅ）１１と、センサ素子である複数のＳＢＤ（Ｓｃｈｏｔｔｋｙ Ｂａｒｒｉｅｒ Ｄｉｏｄｅ）１２ａ、１２ｂと、が並存するように形成された複合半導体装置であって、
ＦＲＤ１１が、２４０μｍ程度の厚みを有するＮ型の第１半導体層１と、第１半導体層１上に島状に形成され、且つ、第１半導体層１とＰＮ接合が形成されるＰ型の第２半導体層２と、第１半導体層１と第２半導体層２との各表面上に形成された絶縁膜４と、第２半導体層２上における絶縁膜４の開口部に形成され第２半導体層２と電気的に接続される５〜８μｍ程度の厚みを有する第３電極７と、第１半導体層１上に形成され第１半導体層１と電気的に接続される第４電極８と、で構成され、
ＳＢＤ１２ａが、第１半導体層１と、第１半導体層１上に島状に形成されたＰ型の第３半導体層３と、第１半導体層１と第３半導体３との各表面上に形成された絶縁膜４と、第１半導体層１及び第３半導体層３上における絶縁膜４の開口部に形成され、且つ、第１半導体層１との間にショットキー接合が形成される第１電極５と、第１半導体層１と電気的に接続される第４電極８と、で構成され、
ＳＢＤ１２ｂが、第１半導体層１と、第１半導体層１上に島状に形成されたＰ型の第３半導体層３と、第１半導体層１と第３半導体層３の各表面上に形成された絶縁膜４と、第１半導体層１上における絶縁膜４の開口部に形成され、且つ、第１半導体層１との間にショットキー接合が形成される第２電極６と、第１半導体層１と電気的に接続される第４電極８と、で構成され、
ＳＢＤ１２ａ、１２ｂを構成する第１電極５及び第２電極６は、互いに離間して形成され、第１電極５はモリブデンＭｏからなり、第２電極６はパラジウムＰｄからなるように形成される。
なお、第１電極５と第２電極６とは第１半導体層１とショットキー接合を形成する材料で構成されているが、第１電極５と第２電極６とは周囲温度に対する漏れ電流が互いに異なるようにバリアハイトΦＢが異なる材料から選択されている。ちなみに第１電極５及び第２電極６はモリブデンＭｏ、パラジウムＰｄ、バナジウムＶ、クロムＣｒ、アルミニウムＡｌ、プラチナＰｔのうちいずれかから選択される。
FIG. 1 is a sectional view showing a composite semiconductor device according to a first embodiment of the present invention. In FIG. 1, in the composite semiconductor device, an FRD (Fast Recovery Diode) 11 that is a semiconductor element and a plurality of SBDs (Shotky Barrier Diode) 12a and 12b that are sensor elements coexist on the same semiconductor layer. A composite semiconductor device formed on
FRD 11 is an N-type first semiconductor layer 1 having a thickness of about 240 μm, an island shape formed on first semiconductor layer 1, and a P-type first semiconductor layer 1 and a PN junction formed with PN junction. 2 semiconductor layer 2, insulating film 4 formed on each surface of first semiconductor layer 1 and second semiconductor layer 2, and second semiconductor formed in an opening of insulating film 4 on second semiconductor layer 2 A third electrode 7 having a thickness of about 5 to 8 μm electrically connected to the layer 2, a fourth electrode 8 formed on the first semiconductor layer 1 and electrically connected to the first semiconductor layer 1; Consists of
An SBD 12 a is formed on each surface of the first semiconductor layer 1, a P-type third semiconductor layer 3 formed in an island shape on the first semiconductor layer 1, and the first semiconductor layer 1 and the third semiconductor 3. The first insulating layer 4 is formed in the opening of the insulating film 4 on the first semiconductor layer 1 and the third semiconductor layer 3 and a Schottky junction is formed between the first semiconductor layer 1 and the first semiconductor layer 1. An electrode 5 and a fourth electrode 8 electrically connected to the first semiconductor layer 1;
The SBD 12b is formed on each surface of the first semiconductor layer 1, the P-type third semiconductor layer 3 formed in an island shape on the first semiconductor layer 1, and the first semiconductor layer 1 and the third semiconductor layer 3. A second electrode 6 formed in the opening of the insulating film 4 on the first semiconductor layer 1 and having a Schottky junction formed with the first semiconductor layer 1; A fourth electrode 8 electrically connected to the semiconductor layer 1;
The first electrode 5 and the second electrode 6 constituting the SBDs 12a and 12b are formed so as to be separated from each other, the first electrode 5 is made of molybdenum Mo, and the second electrode 6 is made of palladium Pd.
The first electrode 5 and the second electrode 6 are made of a material that forms a Schottky junction with the first semiconductor layer 1, but the first electrode 5 and the second electrode 6 have a leakage current with respect to the ambient temperature. Different barrier heights ΦB are selected from different materials. Incidentally, the first electrode 5 and the second electrode 6 are selected from any of molybdenum Mo, palladium Pd, vanadium V, chromium Cr, aluminum Al, and platinum Pt.

従って、本発明の実施形態に係わる複合半導体装置は、同一の半導体層上にセンサ素子として複数のＳＢＤ１２ａ、１２ｂを構成する第１電極５及び第２電極６が互いに離間して形成され、さらに第１電極５及び第２電極６の材質が互いに異なるように選択され形成されている点で、従来の複合半導体装置と相違し、この他は従来の複合半導体装置と同一に構成されている。
Therefore, in the composite semiconductor device according to the embodiment of the present invention, the first electrode 5 and the second electrode 6 constituting the plurality of SBDs 12a and 12b as sensor elements are formed on the same semiconductor layer so as to be separated from each other. The first electrode 5 and the second electrode 6 are different from the conventional composite semiconductor device in that the materials of the first electrode 5 and the second electrode 6 are selected so as to be different from each other. The rest of the configuration is the same as that of the conventional composite semiconductor device.

ＳＢＤの漏れ電流ＩＲの温度特性は、図５に示すように、ショットキー電極の材料に依存し、同一の周囲温度に対するＩＲの値はショットキー電極の材料に応じて異なる。例えば、Ｍｏ、Ｐｄはともに温度が高くなるほどＩＲは大きくなるという線形性を有するが、Ｍｏは比較的低い温度領域においてＰｄよりもＩＲは大きい。又、比較的高い温度領域において、Ｍｏの線形性は崩れるが、Ｐｄの線形性は良好である。
As shown in FIG. 5, the temperature characteristic of the leakage current IR of the SBD depends on the material of the Schottky electrode, and the IR value for the same ambient temperature differs depending on the material of the Schottky electrode. For example, both Mo and Pd have a linearity that IR increases as the temperature increases, but Mo has a higher IR than Pd in a relatively low temperature region. Further, in a relatively high temperature region, the linearity of Mo is broken, but the linearity of Pd is good.

第１実施例によれば、ＭｏからなるＳＢＤ１２ａとＰｄからなるＳＢＤ１２ｂとは互いにＩＲの温度特性が異なる材料で形成されているため、高温領域においては、ＳＢＤ１２ａのＩＲの温度特性の線形性が劣化するが、ＳＢＤ１２ｂから検出するように切り替えることで、ＳＢＤ１２ｂのＩＲの温度特性から精度良くＦＲＤの温度を推定できる。又、低温領域においてはＳＢＤ１２ｂのＩＲが小さくなるが、ＳＢＤ１２ａから検出するように切り替えることで、比較的大きなＩＲが流れるので、精度良く温度を推定できる。このようにＦＲＤ１１の温度に応じてＳＢＤ１２ａ、１２ｂを切り替えて温度検出させることで、幅広い温度領域において、精度良くＦＲＤ１１の温度を検出できる。
According to the first embodiment, since the SBD 12a made of Mo and the SBD 12b made of Pd are formed of materials having different IR temperature characteristics, the linearity of the IR temperature characteristics of the SBD 12a deteriorates in the high temperature region. However, by switching to detect from the SBD 12b, the temperature of the FRD can be accurately estimated from the IR temperature characteristics of the SBD 12b. Moreover, although IR of SBD12b becomes small in a low temperature area | region, since comparatively big IR flows by switching so that it may detect from SBD12a, temperature can be estimated accurately. As described above, the temperature of the FRD 11 can be accurately detected in a wide temperature range by switching the SBDs 12a and 12b according to the temperature of the FRD 11 to detect the temperature.

なお、第１電極５及び第２電極６の端部直下の第１半導体層１上に島状に形成されたＰ型の第３半導体層３は、第３半導体層３で挟まれた第１電極５及び第２電極６直下の第１半導体層１の部分を完全に空乏化させるために配設するように図示しているが、第３半導体層３は配設しなくても良い。
The P-type third semiconductor layer 3 formed in an island shape on the first semiconductor layer 1 immediately below the end portions of the first electrode 5 and the second electrode 6 is sandwiched between the first semiconductor layer 3 and the first semiconductor layer 1. Although the portion of the first semiconductor layer 1 directly below the electrode 5 and the second electrode 6 is shown to be completely depleted, the third semiconductor layer 3 may not be provided.

図２は本発明の第２実施例の複合半導体装置を示す断面図である。図２において、複合半導体装置は、絶縁膜４上において、第１半導体層１及び絶縁膜４よりも高い熱伝導率を有する熱伝導性材料からなる伝熱板９が配設されている。伝熱板９は、絶縁膜４上において、第１電極５及び第２電極６及び第３電極７のうち少なくとも１つの電極の端部に機械的に接触し、その電極の端部から他の電極側に向かって配設されている。従って伝熱板９は、第１電極５から第３電極７までの距離または／且つ第２電極６から第３電極７までの距離を縮めるように配設されている。
FIG. 2 is a sectional view showing a composite semiconductor device according to the second embodiment of the present invention. In FIG. 2, in the composite semiconductor device, a heat transfer plate 9 made of a thermally conductive material having a higher thermal conductivity than the first semiconductor layer 1 and the insulating film 4 is disposed on the insulating film 4. The heat transfer plate 9 is in mechanical contact with the end of at least one of the first electrode 5, the second electrode 6, and the third electrode 7 on the insulating film 4. It is arranged toward the electrode side. Therefore, the heat transfer plate 9 is disposed so as to reduce the distance from the first electrode 5 to the third electrode 7 and / or the distance from the second electrode 6 to the third electrode 7.

第２実施例によれば、第１電極５と第３電極７との間及び第２電極６と第３電極７との間の絶縁膜４が、製造上の加工性が良く、第１半導体層１よりも薄く且つ第１半導体層１とほぼ等しい熱伝導率を有している。従って、伝熱板９を配設することで、ＦＲＤ１１の温度上昇が、絶縁膜４から第１電極５又は第２電極６へとすばやく良好に検出されるため、従来のように第１半導体層１を介してＳＢＤ１２ａ、１２ｂで検出される場合に比べ、高い応答速度で温度上昇を検出できる。
According to the second embodiment, the insulating film 4 between the first electrode 5 and the third electrode 7 and between the second electrode 6 and the third electrode 7 has good workability in manufacturing, and the first semiconductor It is thinner than the layer 1 and has a thermal conductivity substantially equal to that of the first semiconductor layer 1. Therefore, by arranging the heat transfer plate 9, an increase in the temperature of the FRD 11 is detected quickly and satisfactorily from the insulating film 4 to the first electrode 5 or the second electrode 6, so that the first semiconductor layer as in the prior art is used. As compared with the case where the SBDs 12a and 12b are used to detect the temperature rise, the temperature rise can be detected at a higher response speed.

図３は本発明の第３実施例の複合半導体装置を示す断面図である。図３において、複合半導体装置は、第１電極５及び第２電極６上に、第１半導体層１及び絶縁膜４よりも高い熱伝導率を有する熱伝導性材料からなる伝熱板９ａ、９ｂが配設されている。伝熱板９ａ、９ｂは夫々、第１電極５及び第２電極６と機械的に接触し、平面的に見て、第３電極７と重なる領域を有するように第１電極５へと延伸して形成されている。
FIG. 3 is a sectional view showing a composite semiconductor device according to the third embodiment of the present invention. In FIG. 3, the composite semiconductor device includes heat transfer plates 9 a and 9 b made of a heat conductive material having a higher thermal conductivity than the first semiconductor layer 1 and the insulating film 4 on the first electrode 5 and the second electrode 6. Is arranged. The heat transfer plates 9a and 9b are in mechanical contact with the first electrode 5 and the second electrode 6, respectively, and extend to the first electrode 5 so as to have a region overlapping the third electrode 7 in plan view. Is formed.

第３実施例によれば、断面的に見て、伝熱板９ａ、９ｂの延伸された一部と第１電極５との間の絶縁膜４が第１半導体層１よりも薄く、且つ、伝熱板９ａ、９ｂは第１半導体層１よりも高い熱伝導率を有する熱伝導性材料から形成されている。従って、ＦＲＤ１１の温度上昇が、絶縁膜４及び伝熱板９ａ、９ｂを介して第１電極５及び第２電極６へとすばやく良好に検出されるため、従来のように第１半導体層１を介してＳＢＤ１２ａ、１２ｂで検出される場合に比べ、高い応答速度で温度上昇を検出できる。
According to the third embodiment, the insulating film 4 between the extended portion of the heat transfer plates 9a and 9b and the first electrode 5 is thinner than the first semiconductor layer 1 when viewed in cross section, and The heat transfer plates 9 a and 9 b are made of a heat conductive material having a higher heat conductivity than that of the first semiconductor layer 1. Therefore, since the temperature rise of the FRD 11 is detected quickly and satisfactorily to the first electrode 5 and the second electrode 6 through the insulating film 4 and the heat transfer plates 9a and 9b, the first semiconductor layer 1 is formed as in the conventional case. As compared with the case where the SBDs 12a and 12b detect the temperature rise, the temperature rise can be detected at a higher response speed.

本発明の複合半導体装置を構成する半導体素子領域は、ＦＲＤに限定されず、その他のダイオードや、ＩＧＢＴ、ＦＥＴ等のトランジスタで構成されてもよい。さらに、伝熱板９、９ａ、９ｂは、導電性材料に限定されず、第１半導体層１よりも高い熱伝導性を有する材料に置き換えることができる。さらに、伝熱板９ａ、９ｂは、第３電極７と接触し、第１電極５及び第２電極６へと延伸して形成されても良い。又、第２半導体層２と第３電極７との間にモリブデンＭｏ、パラジウムＰｄ、バナジウムＶ、プラチナＰｔ等から構成されるバリアメタル膜を介在させても良い。
The semiconductor element region constituting the composite semiconductor device of the present invention is not limited to the FRD, and may be composed of other diodes, transistors such as IGBTs and FETs. Furthermore, the heat transfer plates 9, 9 a, 9 b are not limited to conductive materials, and can be replaced with materials having higher thermal conductivity than the first semiconductor layer 1. Furthermore, the heat transfer plates 9 a and 9 b may be formed by contacting the third electrode 7 and extending to the first electrode 5 and the second electrode 6. Further, a barrier metal film made of molybdenum Mo, palladium Pd, vanadium V, platinum Pt, or the like may be interposed between the second semiconductor layer 2 and the third electrode 7.

また、本発明の実施形態に係る複合半導体装置は、図６に示すフライバック型スイッチング電源装置に限定されず、以下に示すような回路に適用することができる。なお、ダイオードＤ３は、センサ素子であって、ダイオードＤ２とはＩＲの温度特性が異なるＳＢＤである。
即ち、図４（ａ）に示すフォワード型におけるトランスＴの二次巻線Ｓと並列に接続しても良い。あるいは、図４（ｂ）に示すプッシュプル型におけるトランスＴの二次巻線Ｓ１の一端と出力端子との間、および二次巻線Ｓ２の一端と出力端子との間に接続しても良い。あるいは、図４（ｃ）に示す降圧チョッパ型におけるスイッチング素子Ｑを介して直流電源ＤＣと並列に接続しても良い。このように様々なスイッチング電源における、発熱の大きい半導体素子と本発明の実施形態に係る複合半導体装置とを置き換えることで、応答の速い過熱保護が実現できる。
Further, the composite semiconductor device according to the embodiment of the present invention is not limited to the flyback type switching power supply device shown in FIG. 6, and can be applied to the following circuit. The diode D3 is a sensor element, and is an SBD having a different IR temperature characteristic from the diode D2.
That is, you may connect in parallel with the secondary winding S of the transformer T in the forward type shown to Fig.4 (a). Alternatively, the push-pull transformer shown in FIG. 4B may be connected between one end of the secondary winding S1 and the output terminal of the transformer T and between one end of the secondary winding S2 and the output terminal. . Alternatively, the DC power supply DC may be connected in parallel through the switching element Q in the step-down chopper type shown in FIG. Thus, by replacing the semiconductor element that generates a large amount of heat in various switching power supplies with the composite semiconductor device according to the embodiment of the present invention, it is possible to realize overheat protection with quick response.

本発明の第１実施例の複合半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the composite semiconductor device of 1st Example of this invention. 本発明の第２実施例の複合半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the composite semiconductor device of 2nd Example of this invention. 本発明の第３実施例の複合半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the composite semiconductor device of 3rd Example of this invention. 本発明の複合半導体装置を適用したスイッチング電源装置の構成を示す回路構成図である。It is a circuit block diagram which shows the structure of the switching power supply device to which the composite semiconductor device of this invention is applied. ＳＢＤの漏れ電流ＩＲの温度特性を示す図である。It is a figure which shows the temperature characteristic of the leakage current IR of SBD. 従来のスイッチング電源装置の構成を示す回路構成図である。It is a circuit block diagram which shows the structure of the conventional switching power supply apparatus. 従来の複合半導体装置の構造を示す断面図である。It is sectional drawing which shows the structure of the conventional composite semiconductor device.

符号の説明Explanation of symbols

１ 第１半導体層
２ 第２半導体層
３ 第３半導体層
４ 絶縁膜
５ 第１電極
６ 第２電極
７ 第３電極
８ 第４電極
９、９ａ、９ｂ 伝熱板
１１ ＦＲＤ
１２、１２ａ、１２ｂ ＳＢＤ DESCRIPTION OF SYMBOLS 1 1st semiconductor layer 2 2nd semiconductor layer 3 3rd semiconductor layer 4 Insulating film 5 1st electrode 6 2nd electrode 7 3rd electrode 8 4th electrode 9, 9a, 9b Heat-transfer plate 11 FRD
12, 12a, 12b SBD

Claims (4)

パワー半導体素子として機能する半導体素子領域と、前記半導体素子領域の温度上昇を検出するセンサとして機能する複数のセンサ素子領域と、を半導体基体に備えた複合半導体装置において、
前記複数のセンサ素子領域は、前記半導体基体とショットキー接合を形成する第１電極を有する第１センサ素子と、前記第１電極と離間し、前記半導体基体とショットキー接合を形成し、周囲温度に対する漏れ電流が前記第１電極と異なる第２電極を有する第２センサ素子と、からなることを特徴とする複合半導体装置。
In a composite semiconductor device comprising a semiconductor substrate, a semiconductor element region functioning as a power semiconductor element, and a plurality of sensor element regions functioning as sensors for detecting a temperature rise in the semiconductor element region.
The plurality of sensor element regions include a first sensor element having a first electrode that forms a Schottky junction with the semiconductor substrate, and is spaced apart from the first electrode, forms a Schottky junction with the semiconductor substrate, and has an ambient temperature. And a second sensor element having a second electrode having a leakage current different from that of the first electrode.
第１電極はＭｏから構成され、第２電極はＰｄから構成されていることを特徴とする請求項１の複合半導体装置。
2. The composite semiconductor device according to claim 1, wherein the first electrode is made of Mo and the second electrode is made of Pd.
低温領域と高温領域とでセンサ素子を切り替えて温度検出することを特徴とする請求項１又は２の複合半導体装置。
3. The composite semiconductor device according to claim 1, wherein the temperature is detected by switching the sensor element between a low temperature region and a high temperature region.
パワー半導体素子として機能する半導体素子領域と、前記半導体素子領域の温度上昇を検出するセンサとして機能する複数のセンサ素子領域と、を半導体基体に備えた複合半導体装置において、
スイッチング電源装置の整流素子として使用される複合半導体素子。 In a composite semiconductor device comprising a semiconductor substrate, a semiconductor element region functioning as a power semiconductor element, and a plurality of sensor element regions functioning as sensors for detecting a temperature rise in the semiconductor element region.
A composite semiconductor element used as a rectifying element for a switching power supply.
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JP2000164528A (en) * 1998-11-25 2000-06-16 Sanyo Electric Co Ltd Silicon carbide semiconductor device provided with schottky junction
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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