JP2009161842A - Vapor deposition system, and vapor deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition system which can detect the cracks of a crucible at an initial stage and reduce the damage thereof , and to provide a vapor deposition method. <P>SOLUTION: Disclosed is a vapor deposition system 100 where a film material 22 is evaporated, so as to deposit a film on the surface 72a of a substrate, and comprises: a vapor deposition tank 10; a crucible 20 arranged at the inside of the vapor deposition tank 10, and storing the film material 22; a heating means 30 heating the film material 22 or the crucible 20; a control part 50 controlling the heating means 30; and a vapor deposition rate measuring means 40 measuring the vapor deposition rate of the film material 22. The control part 50 stops the heating by the heating means 30 when the measured result by the vapor deposition rate measuring means 40 reaches a prescribed threshold or above before a prescribed time passes after the start of the heating by the heating means 30 or before the power of the heating means 30 reaches a prescribed value. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method.

  A general vapor deposition apparatus forms a film by directly or indirectly heating and evaporating a film material accommodated in a crucible in the vapor deposition apparatus, and depositing particles of the evaporated film material on a substrate surface. Crucible cracks may occur when the film material is heated or when the temperature is lowered after the completion of vapor deposition. Possible causes of crucible cracking include temperature differences that occur between the inner and outer surfaces of the crucible, stress due to the difference in thermal expansion coefficient between the film material and the crucible when the film material solidifies. A crucible crack may occur at the next temperature rise due to a fine crack of the crucible generated at the time of temperature drop.

  In order to prevent or reduce the occurrence of such crucible cracks, a method of reducing the occurrence of crucible cracks by adjusting the temperature gradient inside the crucible with a dedicated heater when the temperature is lowered has been proposed (for example, Patent Document 1). Moreover, the method of making it hard to break by devising the material and coating | cover of a crucible is proposed (for example, patent document 2).

Japanese Patent Laid-Open No. 9-14385 Japanese Patent Laid-Open No. 2003-56888

  However, it is difficult to eliminate the generation of crucible cracks by these methods. When crucible cracking occurs, the film material in the crucible flows out and adheres to the heating mechanism of the vapor deposition apparatus and members around the crucible and solidifies, so that it takes time to repair or repair the vapor deposition apparatus. When a crucible crack occurs at the time of temperature rise, the film material is at a high temperature, so that it easily spreads within the vapor deposition apparatus, and damage to the vapor deposition apparatus is further increased. Therefore, it is required to detect the occurrence of crucible cracks at an early stage and to minimize damage to the vapor deposition apparatus.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A vapor deposition apparatus according to this application example is a vapor deposition apparatus that evaporates a film material and forms a film on a substrate surface. The vapor deposition apparatus is disposed in the vapor deposition tank and contains the film material. A crucible, a heating unit for heating the film material or the crucible, a control unit for controlling the heating unit, and a deposition rate measuring unit for measuring a deposition rate of the film material, and the control unit includes: If the measurement result by the vapor deposition rate measuring unit is equal to or higher than a predetermined threshold before a predetermined time has elapsed since the heating by the heating unit is started or before the power of the heating unit reaches a predetermined value, The heating by the heating means is stopped.

  According to this configuration, when a crucible crack occurs during heating, the heated film material flows out of the crucible and the amount of evaporation is higher than in a normal case, so the deposition rate is higher than in a normal case. . For this reason, a time shorter than the normal predetermined time from the start of heating until the vapor deposition rate reaches the predetermined threshold, or a power smaller than the predetermined normal power when the vapor deposition rate reaches the predetermined threshold When the vapor deposition rate reaches a predetermined threshold value, it can be determined that crucible cracking has occurred. Thereby, a crucible crack can be detected at an early stage. Moreover, since heating is stopped when the occurrence of crucible cracking is detected, the temperature of the film material in the crucible is lowered, and the outflow of the film material is suppressed. Thereby, the damage which a vapor deposition apparatus receives can be made small.

  Application Example 2 A vapor deposition apparatus according to this application example is a vapor deposition apparatus that evaporates a film material and forms a film on a substrate surface. The vapor deposition apparatus is disposed in the vapor deposition tank and the vapor deposition tank contains the film material. A crucible, a heating unit for heating the film material or the crucible, a control unit for controlling the heating unit, and a deposition rate measuring unit for measuring a deposition rate of the film material, and the control unit includes: When the power of the heating unit is adjusted so that the vapor deposition rate falls within a predetermined range based on the measurement result by the vapor deposition rate measuring unit, when the power falls below a predetermined threshold, the heating unit The heating is stopped.

  According to this configuration, when a crucible crack occurs during heating, the amount of evaporation of the film material is larger than in a normal case. Therefore, when the power of the heating means is adjusted so that the deposition rate is within a predetermined range, the power is It will be smaller than usual. For this reason, if a value smaller than the lower limit value of the power in the normal case is set as the power threshold value, it can be determined that the crucible crack has occurred when the power falls below this threshold value. Thereby, a crucible crack can be detected at an early stage. In addition, when the occurrence of crucible cracking is detected, the heating is stopped by the control unit, so that the temperature of the film material in the crucible is lowered and the outflow of the film material is suppressed. Thereby, the damage which a vapor deposition apparatus receives can be made small.

  Application Example 3 In the vapor deposition apparatus according to the application example described above, when heating by the heating unit is stopped, a notification unit that notifies the fact may be provided.

  According to this configuration, when the occurrence of crucible cracking is detected, the operator can be notified of this.

  Application Example 4 The vapor deposition apparatus according to the application example described above, and may include a protective member that surrounds at least a side portion of the crucible.

  According to this structure, it can suppress that the film | membrane material which flows out out of a crucible by a protection member spreads in a vapor deposition tank.

  Application Example 5 A vapor deposition method according to this application example is a vapor deposition method in which a film material accommodated in a crucible is evaporated in a vapor deposition tank to form a film on a substrate surface, and the film material or the crucible is heated by heating means. When the deposition rate becomes a predetermined threshold or more before a predetermined time has elapsed from the start of heating or before the power of the heating unit reaches a predetermined value, heating by the heating unit is stopped. Features.

  According to this configuration, when a crucible crack occurs during heating, the heated film material flows out of the crucible and the amount of evaporation is higher than in a normal case, so the deposition rate is higher than in a normal case. . For this reason, a time shorter than the normal predetermined time from the start of heating until the vapor deposition rate reaches the predetermined threshold, or a power smaller than the predetermined normal power when the vapor deposition rate reaches the predetermined threshold When the vapor deposition rate reaches a predetermined threshold value, it can be determined that crucible cracking has occurred. Thereby, a crucible crack can be detected at an early stage. Moreover, since heating is stopped when the occurrence of crucible cracking is detected, the temperature of the film material in the crucible is lowered, and the outflow of the film material is suppressed. Thereby, the damage which a vapor deposition apparatus receives can be made small.

  [Application Example 6] A vapor deposition method according to this application example is a vapor deposition method in which a film material contained in a crucible is evaporated in a vapor deposition tank to form a film on a substrate surface, and the vapor deposition rate is within a predetermined range. When the power of the heating means for heating the film material or the crucible is adjusted, heating by the heating means is stopped when the power falls below a predetermined threshold value.

  According to this configuration, when a crucible crack occurs during heating, the deposition rate rises compared to a normal case. Therefore, when the power of the heating means is adjusted so that the deposition rate is within a predetermined range, the power is normal. Smaller than the case. For this reason, if a value smaller than the lower limit value of the power in the normal case is set as the power threshold value, it can be determined that the crucible crack has occurred when the power falls below this threshold value. Thereby, a crucible crack can be detected at an early stage. Moreover, since heating is stopped when the occurrence of crucible cracking is detected, the temperature of the film material in the crucible is lowered, and the outflow of the film material is suppressed. Thereby, the damage which a vapor deposition apparatus receives can be made small.

  Application Example 7 In the vapor deposition method according to the application example described above, when the heating by the heating unit is stopped, the fact is notified.

  According to this configuration, when the occurrence of crucible cracking is detected, the operator can be notified of this.

  Application Example 8 In the vapor deposition method according to the application example described above, when heating by the heating unit is stopped, the vapor deposition tank may be exhausted after a predetermined time.

  According to this configuration, the film material is quickly solidified by exhausting the vapor deposition tank immediately after the occurrence of the crucible crack is detected, so that damage to the vapor deposition apparatus can be further reduced.

  The present embodiment will be described below with reference to the drawings. In each of the drawings to be referred to, the ratio of the dimensions of each component is appropriately changed in order to show the configuration in an easy-to-understand manner.

(First embodiment)
<Vapor deposition equipment>
First, the structure of the vapor deposition apparatus which concerns on 1st Embodiment is demonstrated with reference to figures. FIG. 1 is a schematic configuration diagram of a vapor deposition apparatus according to the first embodiment.

  As shown in FIG. 1, the vapor deposition apparatus 100 according to the present embodiment includes a vapor deposition tank 10, a crucible 20, a heating unit 30, a vapor deposition rate measuring unit 40, a control unit 50, a reporting unit 60, and a substrate 72. And a holding part 70 for holding. Although not shown, the vapor deposition apparatus 100 includes a vacuum pump that evacuates and decompresses the vapor deposition tank 10.

  The vapor deposition tank 10 has a substantially circular top portion 12 and bottom portion 14, and a substantially cylindrical side portion 16. The crucible 20 is arranged on the bottom 14 side in the vapor deposition tank 10. The crucible 20 has a substantially circular bottom portion, a cylindrical side portion whose diameter increases toward the opening side, and a substantially circular peripheral portion surrounding the periphery of the opening portion. The crucible 20 is made of, for example, a ceramic material. As the ceramic material, boron nitride, carbon, quartz, aluminum nitride, silicon nitride, or the like can be used. A film material 22 such as aluminum is accommodated in the crucible 20.

  The heating means 30 is a high frequency induction heating method, and includes a heating coil 32 and a high frequency power source 34. The heating coil 32 is disposed so as to surround the periphery of the side portion of the crucible 20, and is connected to a high frequency power supply 34. In the heating means 30, the film material 22 in the crucible 20 is directly heated by a high-frequency current flowing through the heating coil 32 by the power supplied from the high-frequency power supply 34.

  The vapor deposition rate measuring means 40 is disposed on the side portion 16 in the vapor deposition tank 10. The vapor deposition rate measuring means 40 includes, for example, a crystal resonator. The vapor deposition rate measuring means 40 measures the film thickness formed per unit time from the change in frequency due to the film material 22 attached on the crystal resonator. The deposition rate of the film material 22 deposited on the substrate 72 can be predicted from the measurement result of the deposition rate measuring means 40. The measurement result of the deposition rate measuring means 40 is fed back to the control unit 50.

  The control unit 50 is connected to the high frequency power supply 34, the vapor deposition rate measuring means 40, and the reporting means 60. The controller 50 can control the power (hereinafter referred to as power) supplied from the high frequency power supply 34 to the heating coil 32 based on a preset heating program. Moreover, the control part 50 can monitor the measurement result by the vapor deposition rate measuring means 40, and can control power so that a vapor deposition rate may be settled in a predetermined range. And the control part 50 stops the heating by the heating means 30, when power, elapsed time, and a vapor deposition rate are suitable for the conditions preset in order to detect generation | occurrence | production of a crucible crack.

  Moreover, the control part 50 outputs a signal to the notification means 60, when heating is stopped when it meets the above-mentioned conditions. The reporting means 60 includes a device that generates an alarm sound and a warning light. The reporting unit 60 is connected to the control unit 50, and generates a warning sound and turns on a warning lamp when a signal is output from the control unit 50. Thereby, it is possible to notify the operator that an abnormality such as a crucible crack has occurred.

  The holding unit 70 is disposed on the upper part 12 in the vapor deposition tank 10. The holding unit 70 holds the substrate 72 on the substrate holding surface 70 a so that the substrate surface 72 a faces the bottom portion 14. The vapor deposition apparatus 100 may include a rotation unit that incorporates a motor, a transmission, and the like and that rotates the holding unit 70 together with the substrate 72 via a rotation axis parallel to the normal line of the substrate holding surface 70a.

<Vapor deposition method>
Next, the vapor deposition method according to the first embodiment will be described with reference to the drawings. FIG. 2 is a flowchart illustrating the vapor deposition method according to the first embodiment. 3, FIG. 4, and FIG. 5 are diagrams for explaining the vapor deposition method according to the first embodiment. Specifically, FIG. 4 is an enlarged view of the time axis of the section B1 in FIG. As shown in FIG. 2, the vapor deposition method according to this embodiment includes a power control step S10, a vapor deposition rate control step S20, and a film formation end step S30.

  First, the heating method according to the present embodiment will be described. FIG. 3 shows an example of a heating program when aluminum is deposited as the film material 22 using the vapor deposition apparatus 100. In FIG. 3, the section indicated by A corresponds to the power control step S10, and the section indicated by B corresponds to the deposition rate step S20. The heating program includes a power control program for increasing the power stepwise in the section indicated by A, that is, power control step S10, and a section indicated by B, that is, the vapor deposition rate within the predetermined range in vapor deposition rate control step S20. And a vapor deposition rate control program for adjusting power.

  In the power control step S10 of FIG. 2, after the heating start step S11, in the power increase step S12, the film material 22 in the crucible 20 is heated by increasing the power by the power control program. More specifically, according to the table shown in Table 1, the control unit 50 increases the power stepwise. In addition, the power in FIG. 3, FIG. 4 and Table 1 is a level value (%).

  As shown in Table 1, the power is first increased from 0% to 20% in 30 minutes, and then the power is controlled to be maintained at 20% for 30 minutes. Next, after increasing the power from 20% to 40% in 30 minutes, the power is maintained at 40% for 30 minutes. Similarly, the power is increased stepwise up to 80%. By increasing the power stepwise in this manner, the temperature of the film material 22 is gradually increased, the temperature difference between the inner surface and the outer surface of the crucible 20 is reduced, and the heat between the film material 22 and the crucible 20 is increased. The stress due to the difference in expansion coefficient is relaxed.

  Then, when it is confirmed in step S13 that the vapor deposition rate has reached a predetermined value 1, for example, 0.1 nm / sec, based on the measurement result by the vapor deposition rate measuring means 40, the process proceeds to vapor deposition rate step S20, and vapor deposition rate control is performed. Switch to the program. At this time, the power may not reach 80%. In a normal case, the deposition rate reaches 0.1 nm / sec when the elapsed time from the start of heating is about 186 minutes, and the power at this point is about 74%. If the vapor deposition rate has not reached the predetermined value 1 in step S13, the power increase step S12 is continued.

  In the vapor deposition rate increasing step S21, the power is increased by the vapor deposition rate control program until the vapor deposition rate increases and reaches a predetermined value 2, for example, 0.5 nm / sec. Then, when it is confirmed in step S22 that the vapor deposition rate has reached the predetermined value 2, the process proceeds to film forming step S23. If the vapor deposition rate has not reached the predetermined value 2 in step S22, the vapor deposition rate increasing step S21 is continued.

  In the film forming step S23, a state in which the power is adjusted so that the vapor deposition rate falls within a predetermined range (hereinafter referred to as a vapor deposition rate control state) is continued, and film formation is performed in this vapor deposition rate control state. The predetermined range of the deposition rate is, for example, 0.5 ± 0.05 nm / sec. Normally, the power rises to about 80% until the vapor deposition rate reaches 0.5 nm / sec. However, when the vapor deposition rate is stabilized in the vapor deposition rate control state, the power becomes about 74%. When film formation is completed, the process proceeds to film formation end step S30, and heating is stopped.

  In order to continuously form a film in the film forming step S23, the wire-like film material 22 is supplied into the crucible 20 at a rate of once every 5 minutes, for example. As shown in FIG. 4, in the deposition rate control state, the film material 22 is supplied into the crucible 20 during each of the material supply times C1, C2, and C3. While the film material 22 is being supplied, the vapor deposition rate temporarily drops, so the program deviates from the vapor deposition rate control program, and the power is set slightly higher than that in the vapor deposition rate control state, for example, set to 76% and maintained. .

  When the supply of the film material 22 is completed, the process returns to the vapor deposition rate control program, but the vapor deposition rate is stabilized after about 2 to 3 minutes have elapsed after the film material supply is completed. Note that while the film material 22 is being supplied into the crucible 20, the film material 22 may be rapidly melted and scattered, so that film formation on the substrate surface 72a is not performed.

  Next, a crucible crack detection method will be described. FIG. 5 shows that when the film material 22 in the crucible 20 is heated by the above-described heating program using the vapor deposition apparatus 100, the crucible 20 is not cracked (hereinafter referred to as a normal case) and the crucible 20 is cracked. It is the figure which compared and showed transition of the vapor deposition rate in the case where it generate | occur | produces (henceforth the case of a crucible crack). As can be seen from FIG. 5, in both the normal case and the crucible cracking, the deposition rate starts to rise when the elapsed time from the start of heating is about 145 minutes. The power at this point cannot be read from FIG. 5, but is about 59%.

  The elapsed time until the deposition rate reaches 0.1 nm / sec, which is the predetermined value 1, is about 186 minutes in a normal case, and is about 173 minutes in the case of a crucible crack. Further, the power at this point cannot be read from FIG. 5, but is about 74% in the normal case as described above, and about 60% in the case of the crucible crack. That is, in the case of crucible cracking, the deposition rate increases with a shorter time and with a smaller power than in the normal case. This is because, in the case of crucible cracking, the heated film material 22 flows out of the crucible 20 and the amount of evaporation is larger than in a normal case, so that the deposition rate is increased as compared with the normal case. Therefore, conditions for detecting the occurrence of crucible cracking are set from the correlation among power, heating time, and vapor deposition rate.

  First, conditions for detecting the occurrence of crucible cracking in a state where the power is increasing in the power control step S10 will be described. For example, a deposition rate of 0.1 nm / sec when switching from a power control program to a deposition rate control program is used as a threshold for the deposition rate. Next, the lower limit of the elapsed time until the vapor deposition rate reaches the threshold value in the normal case (hereinafter referred to as the predetermined time) is set to a value shorter than 186 minutes, for example, 185 minutes. In a normal case, the lower limit of power (hereinafter referred to as a predetermined value) when the deposition rate reaches the threshold value is set to a value smaller than 74%, for example 70%.

  In the case of crucible cracking, the deposition rate becomes equal to or higher than this threshold with a shorter time and a lower power than in the normal case. Therefore, based on the above-mentioned setting conditions, before the 185 minutes of the predetermined time elapses or the power is predetermined. Before reaching 70% of the value, it can be determined that crucible cracking has occurred when the deposition rate reaches or exceeds the threshold value of 0.1 nm / sec.

  Note that the threshold of the deposition rate is not limited to the above value. For example, if the deposition rate threshold is 0.05 nm / sec, the elapsed time until the deposition rate reaches the threshold is usually about 184 minutes, but in the case of crucible cracking, it is about 168 minutes. Therefore, for example, if the predetermined time for the vapor deposition rate to reach the threshold value in the normal case is 182 minutes, the crucible crack occurs when the vapor deposition rate exceeds the threshold value before the 182 minutes of the predetermined time elapses. I can judge.

  Also, from the comparison of power and vapor deposition rate, a value that exceeds the upper limit of the normal vapor deposition rate when the power is at a predetermined value is set as the vapor deposition rate threshold, and when the power reaches the predetermined value, the vapor deposition rate is reached. May be determined that crucible cracking has occurred.

  Next, conditions for detecting the occurrence of crucible cracking in the deposition rate control state in the deposition rate control step S20 will be described. As described above, when the crucible crack occurs, the evaporation amount of the film material becomes larger than that in the normal case. In the vapor deposition rate control state, the power is adjusted so that the vapor deposition rate falls within a predetermined range. Therefore, when a crucible crack occurs, the power is smaller than 74% of the normal case. Therefore, if a value smaller than the lower limit of power in the normal case, for example, 72% is set as the power threshold, the crucible crack occurs when the power falls below 72% of the threshold in the deposition rate control state. I can judge.

  However, the power is maintained at 76% during C1, C2, C3 (see FIG. 4) in which the film material 22 is supplied into the crucible 20 in the film forming step S23, and C1, C2, C3. The deposition rate is not stable for about 2 to 3 minutes after each. Therefore, in the vapor deposition rate control state, for example, crucible cracking can be detected according to the above-described conditions from the time when 3 minutes have elapsed after the film material supply is completed until the next film material supply is started.

  As described above, the occurrence of a crucible crack can be detected at an early stage by appropriately setting conditions from the relationship among power, heating time, and vapor deposition rate. When the occurrence of crucible cracking is detected in the power control step S10 or the deposition rate control step S20, the heating by the high frequency power supply 34 is stopped by the control unit 50, so that the temperature of the film material 22 in the crucible 20 decreases. Thereby, since the outflow amount of the film | membrane material 22 is suppressed, the damage which the vapor deposition apparatus 100 receives can be made small.

  Further, when the occurrence of crucible cracking is detected, the control unit 50 outputs a signal to the reporting means 60, and the reporting means 60 generates an alarm sound upon receiving this signal and turns on the warning lamp, so that the crucible cracking occurs. Notify the operator that it has occurred. Thereby, an operator can take measures to reduce the damage to the vapor deposition apparatus 100. As this treatment, for example, the vapor deposition tank 10 may be exhausted after a predetermined time from the stop of heating. This predetermined time may be immediately after the heating is stopped, or may be a time until the temperature of the crucible 20 decreases to some extent. By evacuating the vapor deposition tank 10, solidification of the film material 22 is accelerated, so that damage to the vapor deposition apparatus 100 can be further reduced.

(Second Embodiment)
<Vapor deposition equipment>
Next, the structure of the vapor deposition apparatus which concerns on 2nd Embodiment is demonstrated with reference to figures. FIG. 6 is a schematic configuration diagram of a vapor deposition apparatus according to the second embodiment.

  Although the vapor deposition apparatus 200 which concerns on 2nd Embodiment differs in the point provided with the protection member with respect to the vapor deposition apparatus 100 which concerns on 1st Embodiment, the other structure is the same. In addition, the same code | symbol is attached | subjected about the component in common with 1st Embodiment, and the description is abbreviate | omitted.

  As shown in FIG. 6, the vapor deposition apparatus 200 according to this embodiment includes a vapor deposition tank 10, a crucible 20, a protective member 24, a heating unit 30, a vapor deposition rate measuring unit 40, a control unit 50, and a reporting unit. 60 and a holding unit 70 that holds the substrate 72.

  The protection member 24 has a circular bottom portion and a cylindrical side portion, and is disposed so as to surround the bottom portion and the side portion of the crucible 20. The protective member 24 may have only a cylindrical side portion and may be disposed so as to surround the side portion of the crucible 20. The protective member 24 is made of, for example, fibrous alumina or the like. The protective member 24 may also serve as a heat insulating member.

  According to the configuration of the vapor deposition apparatus 200, when the crucible 20 is broken and the film material 22 in the crucible 20 flows out, the protective material 24 can absorb the film material 22 that flows out. In addition, since the protective member 24 is disposed so as to surround the crucible 20, the film material 22 that has flowed out can be retained in this space up to an amount that fills the space between the crucible 20 and the protective member 24. . Therefore, if the crack of the crucible 20 is detected at an early stage and the heating is stopped, the outflow of the film material 22 can be suppressed, so that the outflowed film material 22 spreads and adheres to the heating coil 32 and the vapor deposition tank 10. Can be prevented.

(Third embodiment)
<Vapor deposition method>
Next, a vapor deposition method according to the third embodiment will be described with reference to the drawings. FIG. 7 is a diagram for explaining a crucible crack detection method according to the third embodiment.

  The vapor deposition method according to the third embodiment is a crucible crack detection method compared to the vapor deposition method according to the first embodiment. The conditions for detecting the occurrence are different, but the other methods and conditions are the same. Note that description of components common to the first embodiment is omitted.

  As described in the first embodiment, when a crucible crack occurs, the vapor deposition rate increases as compared with a normal case. Therefore, it can be determined that crucible cracking has occurred when the deposition rate rises and exceeds the upper limit of the variation in the deposition rate in the normal case.

  The normal deposition rate indicated by the solid line in FIG. 7 and the deposition rate in the case of crucible cracking are the same as those shown in FIG. The vapor deposition rate indicated by the broken line D in FIG. 7 is obtained by multiplying the value of the vapor deposition rate in a normal case by 1.5 as a coefficient including a margin in consideration of variations in the vapor deposition rate in the normal case. is there.

  In FIG. 7, the vapor deposition rate in the case of crucible cracking rises above the vapor deposition rate indicated by the broken line D when about 165 minutes have elapsed after the start of heating. In this way, if a limit line such as a broken line D is set by multiplying the vapor deposition rate in a normal case by a predetermined coefficient, the occurrence of the crucible crack can be detected by the vapor deposition rate exceeding the limit line. Note that the above-described coefficient is not limited to 1.5, and may be set as appropriate based on variations in the deposition rate.

  According to the vapor deposition method of the third embodiment, since crucible cracks can be detected in a shorter time after the start of heating, when the crucible cracks occur in a short time after the start of heating, the damage to the vapor deposition apparatuses 100 and 200 is further affected. Can be small.

  Various modifications can be made to the above embodiment. As modifications, for example, the following can be considered.

<Modification 1>
In the above embodiment, the heating means 30 includes the heating coil 32 and the high-frequency power source 34 and is a high-frequency induction heating method in which the film material 22 in the crucible 20 is directly heated, but is not limited to such a form. The heating means may have a configuration corresponding to another heating method such as an electron beam heating method, a laser beam heating method, a resistance heating method, or a method of indirectly heating the film material by heating the crucible. It may be.

<Modification 2>
In the above embodiment, the power is gradually increased by the power control program until the vapor deposition rate reaches a predetermined value after the start of heating, and the vapor deposition rate control program is switched to when the vapor deposition rate reaches the predetermined value. However, it is not limited to such a form. You may heat by the vapor deposition rate control program from the time of a heating start.

  In the case of heating with the vapor deposition rate control program from the start of heating, the power increases almost continuously as the vapor deposition rate increases until the vapor deposition rate reaches a predetermined value, for example, 0.5 nm / sec. When a crucible crack occurs in a state where the deposition rate is increasing, the same deposition rate is reached with a smaller power than in a normal case.

  Therefore, if a predetermined value of the vapor deposition rate and a power threshold smaller than the power value when the vapor deposition rate reaches the predetermined value are set based on the relationship between the vapor deposition rate and the power in a normal case, the vapor deposition is performed. If the power is below the threshold when the rate reaches a predetermined value, it is considered that crucible cracking has occurred. In this way, even when heating is performed by the vapor deposition rate control program from the start of heating, the occurrence of crucible cracks can be detected.

The schematic block diagram of the vapor deposition apparatus which concerns on 1st Embodiment. The flowchart explaining the vapor deposition method which concerns on 1st Embodiment. The figure explaining the vapor deposition method which concerns on 1st Embodiment. The figure explaining the vapor deposition method which concerns on 1st Embodiment. The figure explaining the vapor deposition method which concerns on 1st Embodiment. The schematic block diagram of the vapor deposition apparatus which concerns on 2nd Embodiment. The figure explaining the crucible crack detection method which concerns on 3rd Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Deposition tank, 12 ... Upper part, 14 ... Bottom part, 16 ... Side part, 20 ... Crucible, 22 ... Film material, 24 ... Protection member, 30 ... Heating means, 32 ... Heating coil, 34 ... High frequency power supply, 40 ... Deposition Rate measuring means, 50 ... control section, 60 ... reporting means, 70 ... holding section, 70a ... substrate holding surface, 72 ... substrate, 72a ... substrate surface, 100, 200 ... vapor deposition apparatus.

Claims (8)

A vapor deposition apparatus for evaporating a film material to form a film on a substrate surface,
A deposition tank;
A crucible disposed in the vapor deposition tank and containing the film material;
Heating means for heating the film material or the crucible;
A control unit for controlling the heating means;
A deposition rate measuring means for measuring a deposition rate of the film material,
The control unit has a measurement result by the vapor deposition rate measuring unit that is equal to or greater than a predetermined threshold before a predetermined time elapses after starting heating by the heating unit or before the power of the heating unit reaches a predetermined value. When it becomes, the vapor deposition apparatus characterized by stopping the heating by the heating means. A vapor deposition apparatus for evaporating a film material to form a film on a substrate surface,
A deposition tank;
A crucible disposed in the vapor deposition tank and containing the film material;
Heating means for heating the film material or the crucible;
A control unit for controlling the heating means;
A deposition rate measuring means for measuring a deposition rate of the film material,
The control unit adjusts the power of the heating unit so that the vapor deposition rate falls within a predetermined range based on the measurement result by the vapor deposition rate measuring unit, and the power is below a predetermined threshold. The vapor deposition apparatus characterized by stopping heating by the heating means. The vapor deposition apparatus according to claim 1 or 2,
When the heating by the heating means is stopped, the vapor deposition apparatus is provided with a notification means for notifying that effect. The vapor deposition apparatus according to any one of claims 1 to 3,
A vapor deposition apparatus comprising a protective member surrounding at least a side portion of the crucible. A vapor deposition method for evaporating a film material contained in a crucible in a vapor deposition tank to form a film on a substrate surface,
When the deposition rate is equal to or higher than a predetermined threshold before a predetermined time elapses after the heating unit starts heating the film material or the crucible, or before the power of the heating unit reaches a predetermined value, The vapor deposition method, wherein heating by the heating means is stopped. A vapor deposition method for evaporating a film material contained in a crucible in a vapor deposition tank to form a film on a substrate surface,
When the power of the heating means for heating the film material or the crucible is adjusted so that the deposition rate falls within a predetermined range, if the power falls below a predetermined threshold, heating by the heating means is stopped. The vapor deposition method characterized by the above-mentioned. The vapor deposition method according to claim 5 or 6,
When the heating by the heating means is stopped, a notification to that effect is given. The vapor deposition method according to any one of claims 5 to 7,
When the heating by the heating means is stopped, the vapor deposition tank is evacuated after a predetermined time.

Images