JP2018113115A - Heating device and heating method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heating device and a heating method capable of preventing a heating treatment in which the temperature of a substrate is inaccurate.SOLUTION: A heating device comprises: a chamber 10; a heater which heats a substrate 100 housed in the chamber 10; a temperature measurement device 30 which measures the temperature of the substrate 100 housed in the chamber 10; a calculation device 51 which calculates heating energy Q that has been supplied to the heater 20 for heating the substrate 100 until a measured substrate temperature H of the substrate 100 measured by the temperature measurement device 30 has reached a preset temperature; and a determination device 52 which determines whether or not the heating energy Q thus calculated meets a determination condition that is set on the basis of a reference energy for causing the temperature of the substrate 100 to reach the preset temperature.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a heating apparatus and a heating method used for heat treatment of a substrate.

  Manufacturing a semiconductor device such as a semiconductor device or a solar cell includes a process of processing the substrate at a predetermined process temperature. For this reason, the substrate temperature is set to the process temperature by preheating before the processing step, annealing treatment in the processing step, or the like.

  For example, in a film formation process by plasma enhanced chemical vapor deposition (CVD), in order to raise the substrate to a predetermined film formation temperature, the substrate is heated in a heating chamber provided in front of the film formation process chamber (for example, Patent Document 1). reference.). In the heat treatment, it is confirmed that the temperature of the substrate measured by the temperature measuring device has reached a predetermined process temperature, and the heating of the substrate is finished.

JP 2010-159463 A

  However, the temperature of the substrate may not be accurately measured by the temperature measuring device due to failure of the temperature measuring device or deterioration of the measurement environment. For example, when measuring the temperature of a substrate with a radiation thermometer placed outside the chamber in which the substrate is stored, the temperature of the substrate cannot be measured accurately if foreign matter adheres to the temperature monitoring window installed in the chamber. . If the temperature measurement of the substrate in the heat treatment is inaccurate, there is a problem that the temperature of the substrate is not set to a predetermined process temperature and a semiconductor device having desired characteristics cannot be obtained.

  In view of the above problems, an object of the present invention is to provide a heating apparatus and a heating method that can suppress heat treatment in which the temperature of the substrate is inaccurate.

  According to one aspect of the present invention, a chamber, a heater for heating a substrate stored in the chamber, a temperature measuring device for measuring the temperature of the substrate stored in the chamber, and a substrate measured by the temperature measuring device A calculation device that calculates the heating energy supplied to the heater to heat the substrate until the measurement substrate temperature reaches the set temperature, and the calculated heating energy becomes the reference energy that causes the substrate temperature to reach the set temperature. There is provided a heating device including a determination device that determines whether or not a determination condition set based on the determination criterion is satisfied.

  According to another aspect of the present invention, the step of heating the substrate stored in the chamber with a heater until the measurement substrate temperature of the substrate measured by the temperature measurement device reaches the set temperature, and the measurement substrate temperature is set. Calculating the heating energy supplied to the heater to heat the substrate until the temperature is reached, and a determination that the calculated heating energy is set based on a reference energy that causes the substrate temperature to reach a set temperature A heating method is provided that includes determining whether a condition is met.

  ADVANTAGE OF THE INVENTION According to this invention, the heating apparatus and heating method which can suppress the heat processing in which the temperature of a board | substrate is inaccurate can be provided.

It is a schematic diagram which shows the structure of the heating apparatus which concerns on embodiment of this invention. It is a graph which shows the relationship between application time and measurement board | substrate temperature. It is a graph which shows the relationship between application time and the electric quantity supplied to a heater. It is a flowchart for demonstrating the heating method which concerns on embodiment of this invention. It is a schematic diagram which shows the example which used the heating apparatus which concerns on embodiment of this invention for some in-line type process processing systems. It is a graph for demonstrating the heating method which concerns on the modification of embodiment of this invention.

  Embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic. Further, the embodiment described below exemplifies an apparatus and a method for embodying the technical idea of the present invention, and the embodiment of the present invention has the following structure and arrangement of components. It is not something specific. The embodiment of the present invention can be variously modified within the scope of the claims.

  As shown in FIG. 1, the heating apparatus 1 according to the embodiment of the present invention includes a chamber 10, a heater 20 that heats the substrate 100 stored in the chamber 10, and the temperature of the substrate 100 stored in the chamber 10. The temperature measuring device 30 to be measured and the heating energy Q supplied to the heater 20 to heat the substrate 100 until the measured substrate temperature H of the substrate 100 measured by the temperature measuring device 30 reaches the set temperature Hs are calculated. And a determination device 52 that determines whether or not the calculated heating energy Q satisfies the determination condition.

  As will be described later, the determination condition for the heating energy Q is set based on the reference energy that causes the actual temperature of the substrate 100 to reach the set temperature Hs by the heating of the heater 20. The set temperature is a target temperature of the temperature of the substrate 100 that is desired to be realized by the heat treatment by the heating device 1. The set temperature is set corresponding to a process temperature necessary for a process performed after the heat treatment.

  The substrate 100 to be heat-treated stored in the chamber 10 is, for example, a semiconductor substrate, a resin substrate, a ceramic substrate, a glass substrate, or the like used for a semiconductor device or a solar battery. The substrate 100 is mounted on the substrate tray 110 and stored in the chamber 10. As the substrate tray 110, any substrate tray such as a cart type in which the substrates 100 are arranged on a horizontal plate or a boat type in which the substrates 100 are arranged vertically can be used.

  As the temperature measuring device 30, a contact type temperature measuring device in which a detection unit is brought into contact with the substrate 100, a non-contact type temperature measuring device such as a radiation thermometer, or the like is used. In the heating apparatus 1 shown in FIG. 1, the temperature of the substrate 100 is measured by a non-contact type radiation thermometer arranged outside the chamber 10. That is, infrared rays, visible rays, and the like emitted from the substrate 100 are received by the temperature measuring device 30 through the temperature monitoring window 11 installed in the chamber 10. The temperature measuring device 30 measures the intensity of the radiation, and the measurement substrate temperature H is obtained.

  The heater 20 may use any heating method. For example, a lamp heater, a sheath heater, or the like can be used for the heater 20. The heater 20 is disposed inside a stage (not shown) on which the substrate tray 110 is mounted inside the chamber 10 and around the substrate 100 and the substrate tray 110 along the inner wall of the chamber 10.

  An electrical quantity for heating the substrate 100 is supplied from the drive power supply 40 to the heater 20. The content of the electrical quantity supplied to the heater 20 varies depending on the structure of the heater 20. For example, in the case of the heater 20 that operates at a constant power supply voltage, the drive power supply 40 supplies a drive current to drive the heater 20.

  The operation of the drive power supply 40 is controlled by the power supply controller 53. That is, the heating of the substrate 100 by the heater 20 is controlled by the power supply controller 53 as follows.

  When the power source controller 53 controls the driving power source 40 to drive the heater 20, the heating of the substrate 100 is started. Thereafter, the power supply controller 53 monitors the measurement substrate temperature H continuously measured by the temperature measuring device 30, and controls the drive power supply 40 to heat the measurement substrate temperature H according to the timing when the measurement substrate temperature H reaches the set temperature. The heating of the substrate 100 by the vessel 20 is stopped.

  Note that the amount of change in the temperature of the substrate 100 can be adjusted by the power supply controller 53 controlling the magnitude of the electrical amount supplied from the drive power supply 40 to the heater 20. For example, as the measurement substrate temperature H approaches the set temperature, the electrical amount supplied to the heater 20 is decreased. As a result, the rate of increase in the temperature of the substrate 100 decreases, and the temperature of the substrate 100 can be stabilized at the set temperature at the timing when heating of the substrate 100 is stopped.

  In the heating device 1 shown in FIG. 1, the heating parameter measurement device 54 measures the electrical quantity supplied from the drive power supply 40 to the heater 20 in order to drive the heater 20. Further, the heating parameter measuring device 54 measures the time (hereinafter referred to as “application time”) when the electrical quantity for heating the substrate 100 is supplied to the heater 20. For example, the application time can be measured by monitoring the operating state of the drive power supply 40. Alternatively, the operating state of the power controller 53 may be monitored. The measured electrical quantity and application time are transmitted to the calculation device 51 as electrical quantity data E and application time data T. The calculation device 51 calculates the heating energy Q supplied to the heater 20 using the electrical quantity data E and the application time data T as will be described later.

  The calculation device 51, the determination device 52, the power controller 53, and the heating parameter measurement device 54 are included in the control device 50 as shown in FIG. The control device 50 is configured as a programmable logic controller (PLC), for example.

  Due to various causes, the measurement substrate temperature H measured by the temperature measuring device 30 may be inaccurate. For example, when the temperature measuring device 30 is out of order, the temperature of the substrate 100 is not accurately measured.

  In addition, fragments of the substrate 100 that are cracked or chipped during conveyance, or product powder attached to the substrate tray 110 used in the film formation process may fall or scatter in the chamber 10. In this case, if foreign matter such as debris of the substrate 100 or product powder dropped from the substrate tray 110 adheres to the temperature monitoring window 11 of the chamber 10, the temperature of the substrate 100 is not accurately measured. When a foreign substance adheres to the window 11 of the chamber 10, the temperature of the substrate 100 is often measured lower than the actual temperature, and the heating of the substrate 100 is continued more than necessary.

  FIG. 2 shows an example of the relationship between the application time and the measurement substrate temperature H. In FIG. 2, a characteristic H1 indicates a measurement substrate temperature H when the temperature of the substrate 100 is accurately measured by the temperature measuring device 30, and a characteristic H2 indicates that the temperature of the substrate 100 measured by the temperature measuring device 30 is inaccurate. In this case, the measurement substrate temperature H is shown. A characteristic H2 indicates a case where the temperature of the substrate 100 is measured lower than the actual temperature.

  As shown in FIG. 2, at time t1 when the accurate measurement substrate temperature H indicated by the characteristic H1 reaches the set temperature Hs, the measurement substrate temperature H indicated by the characteristic H2 does not reach the set temperature Hs. For this reason, in the heat treatment while monitoring the characteristic H2, the application time for heating the substrate 100 by the heater 20 is long until the measurement substrate temperature H reaches the set temperature Hs.

  FIG. 3 shows the relationship between the application time and the electrical quantity supplied to the heater 20 in this case. In FIG. 3, it is supplied to the heater 20 from the time t1 when the measurement substrate temperature H indicated by the characteristic H1 reaches the set temperature Hs to the time t2 when the measurement substrate temperature H indicated by the characteristic H2 reaches the set temperature Hs. The electrical quantity ΔE is indicated by hatching. As described above, when the temperature of the substrate 100 is measured lower than the actual temperature, the electric amount is excessively larger than the electric amount necessary for the actual temperature of the substrate 100 to reach the set temperature Hs. 20 is supplied. On the other hand, when the temperature of the substrate 100 is measured higher than the actual temperature, the electrical quantity is insufficient for the actual temperature of the substrate 100 to reach the set temperature Hs.

  Therefore, when the measurement substrate temperature H is lower than the actual temperature of the substrate 100, the electrical amount supplied to the heater 20 becomes excessive, and the temperature of the substrate 100 exceeds the set temperature Hs. On the other hand, when the measurement substrate temperature H is higher than the actual temperature of the substrate 100, the electrical amount supplied to the heater 20 is insufficient, and the temperature of the substrate 100 does not reach the set temperature Hs. That is, when the measurement substrate temperature H is inaccurate, the temperature of the substrate 100 after the heat treatment exceeds the predetermined process temperature or does not reach the process temperature.

  As a result, the substrate 100 is processed at a temperature different from the process temperature, and desired characteristics cannot be obtained. For this reason, it becomes necessary to discard the substrate 100 or to reuse after cleaning the substrate 100, resulting in a decrease in yield and an increase in manufacturing cost. Further, the longer application time shortens the life of the temperature measuring device 30 and increases the maintenance cost of the apparatus.

  As described above, when the measurement substrate temperature H is inaccurate, the electrical amount supplied to the heater 20 is different from the electrical amount for the actual temperature of the substrate 100 to reach the set temperature Hs. The heating apparatus 1 shown in FIG. 1 suppresses heat treatment in which the measurement substrate temperature H is inaccurate by calculating the electrical quantity until the measurement substrate temperature H reaches the set temperature Hs.

  Below, with reference to the flowchart shown in FIG. 4, the example of the heating method by the heating apparatus 1 is demonstrated. Hereinafter, a case where the substrate 100 is heated by supplying a driving current to the heater 20 by the driving power source 40 will be described as an example. That is, the heating parameter measuring device 54 measures the drive current for supplying power to the heater 20 as an electrical quantity.

  In step S <b> 1 of FIG. 4, the substrate 100 to be processed is stored in the chamber 10. The substrate 100 is placed at a predetermined position inside the chamber 10 by being mounted on the substrate tray 110 or the like.

  In step S <b> 2, the substrate 100 stored in the chamber 10 is heated by the heater 20 until the measured substrate temperature H of the substrate 100 measured by the temperature measuring device 30 reaches the set temperature Hs. During the period in which the substrate 100 is heated by the heater 20, the measurement substrate temperature H is continuously monitored by the power supply controller 53. In addition, the electrical quantity and the application time supplied from the drive power supply 40 to the heater 20 are measured by the heating parameter measuring device 54.

  When the measurement substrate temperature H measured by the temperature measuring device 30 reaches the set temperature Hs, the power supply controller 53 controls the drive power supply 40 in step S3, and the heating of the substrate 100 by the heater 20 is finished.

  In step S4, the calculation device 51 uses the electrical amount and the application time to calculate the heating energy Q supplied to the heater 20 to heat the substrate 100 until the measurement substrate temperature H reaches the set temperature Hs. calculate.

  For example, the calculation device 51 uses the drive current per unit time transmitted from the heating parameter measurement device 54 to calculate the average value of the drive current during the application time. Then, the calculation device 51 calculates the product of the average value of the drive current and the application time as the heating energy Q. For example, the calculation device 51 calculates the heating energy for a period from when the heating of the substrate 100 by the heater 20 is started until the measurement substrate temperature H reaches the set temperature Hs. The calculated heating energy Q is transmitted to the determination device 52.

  In step S5, the determination device 52 determines whether or not the heating energy Q calculated by the calculation device 51 satisfies the determination condition. The determination condition is set based on the reference energy, which is the heating energy Q at normal time, necessary for causing the actual temperature of the substrate 100 to reach the set temperature Hs. “Normal” will be described later.

  In step S6, when the heating energy Q does not satisfy the determination condition, the determination device 52 issues an alarm. For example, a warning message is displayed on the screen of the display device or an alarm sound is sounded to alert the worker.

  When an alarm is issued, the worker examines the cause of the calculated heating energy Q not satisfying the determination condition and takes measures. For example, the cleaning of the chamber 10 such as removing foreign matter attached to the temperature monitoring window 11 installed in the chamber 10 or the replacement of the failed temperature measuring device 30 is performed. Note that the substrate 100 that has been subjected to the heat treatment for which an alarm has been issued is discarded or regenerated.

  On the other hand, when the heating energy Q satisfies the determination condition, the determination device 52 does not issue an alarm. In this case, since the actual temperature of the substrate 100 is the set temperature Hs, the substrate 100 heated by the heating device 1 is advanced to the next process (step S7).

  “Normal” when setting the determination condition of the heating energy Q described above is when the measured substrate temperature H measured by the temperature measuring device 30 matches the actual temperature of the substrate 100. That is, at the normal time, the temperature measuring device 30 accurately measures the temperature of the substrate 100, and the substrate 100 heated by the heating device 1 has a predetermined process temperature.

  Therefore, after the heat treatment in which the normal heating energy Q is supplied to the heater 20, a desired result can be obtained in the process treatment performed on the substrate 100. For example, when a film is formed on the substrate 100 that has been heat-treated by the heating device 1 in a normal state, desired characteristics can be obtained, such as a film having a predetermined thickness is uniformly formed on the substrate 100.

  For this reason, the determination condition of the heating energy Q is set within a certain range from the reference energy with the normal heating energy Q at which the temperature of the substrate 100 is accurately heated to a predetermined process temperature as the reference energy. Note that the range of the determination condition can be arbitrarily set according to the range of the process temperature at which desired characteristics can be obtained. For example, the range of 0.8 to 1.2 times the reference energy is set as the determination condition. More preferably, 0.9 to 1.1 times the reference energy is set as the determination condition range.

  In the heating method described with reference to FIG. 4, when the measurement substrate temperature H of the substrate 100 measured by the temperature measuring device 30 is inaccurate, the heating energy Q does not satisfy the determination condition. That is, when the measurement substrate temperature H is lower than the actual temperature of the substrate 100, the application time becomes longer than the time actually required for heating the substrate 100. For this reason, the calculated heating energy Q is larger than the normal heating energy. On the other hand, when the measurement substrate temperature H is higher than the actual temperature of the substrate 100, the application time is shorter than the time actually required for heating the substrate 100. For this reason, the heating energy Q is smaller than the normal heating energy.

  As shown in FIG. 3, when the measurement substrate temperature H is lower than the actual temperature of the substrate 100, the electrical quantity supplied to the heater 20 increases compared to the normal time. That is, since the heat treatment is too long, the heating energy Q at the time of abnormality is larger than that at the time of normal operation. On the other hand, when the heat treatment is too short, the heating energy Q at the time of abnormality is smaller than at the time of normal.

  Therefore, when the heat treatment is too long or too short, the heating energy Q calculated by the calculation device 51 of the heating device 1 does not satisfy the determination condition. Thus, the heating apparatus 1 detects an abnormality in the measurement substrate temperature H by comparing the heating energy Q calculated using the measurement substrate temperature H with the normal heating energy Q. An operator can detect that the measurement substrate temperature H is abnormal by an alarm or the like issued from the determination device 52.

  As described above, in the heating method using the heating apparatus 1, the electrical quantity required for the actual temperature of the substrate 100 to be the set temperature Hs is used as the electrical quantity until the measurement substrate temperature H reaches the set temperature Hs. Compare with target amount. Thereby, it is determined whether or not the temperature measuring device 30 accurately measures the temperature of the substrate 100. For this reason, the abnormality of the measurement substrate temperature H measured by the temperature measuring device 30 can be detected at an early stage.

  When it is determined that the measurement substrate temperature H is inaccurate, the substrate 100 heated at the measurement substrate temperature H is prevented from proceeding to the next step, and the accurate measurement substrate temperature H Thus, the heating device 1 is maintained. That is, according to the heating method using the heating apparatus 1, the substrate 100 that is not at the predetermined process temperature can be advanced to the next step, or the new substrate 100 can be heat-treated by inaccurate temperature measurement. . As a result, it is possible to prevent the generation of a large number of defective substrates 100 without noticing the abnormality of the measurement substrate temperature H.

  As described above, according to the heating method using the heating apparatus 1 according to the embodiment of the present invention, it is possible to suppress heat treatment in which the measurement substrate temperature H is inaccurate. Thereby, it is possible to prevent a decrease in yield and an increase in manufacturing cost. Moreover, since the unnecessary heating by the heater 20 is prevented, it can suppress that the lifetime of the heater 20 becomes short. In particular, when the temperature measuring device 30 is of a non-contact type such as a radiation thermometer, the window 11 of the chamber 10 may be blocked by foreign matter, and accurate measurement of the temperature of the substrate 100 may be hindered. 1 is valid.

  The normal heating energy Q is, for example, an electrical quantity until the temperature of the substrate 100 reaches the set temperature Hs in a state where it is confirmed that there is no abnormality in the temperature measuring device 30 or the chamber 10. Can be obtained. For example, while monitoring the temperature of the substrate 100 by a contact-type measurement method, the electrical quantity until the measurement substrate temperature H measured by the temperature measuring device 30 such as a radiation thermometer reaches the set temperature Hs is measured. Heating energy Q is calculated. In this way, when the temperature of the substrate 100 is simultaneously measured by a plurality of different temperature measuring methods including the temperature measuring device 30, and the temperature of the substrate 100 by the respective temperature measuring methods is the same, the temperature measuring device 30 is accurate. It is determined that the temperature of the substrate 100 is being measured.

  The heating apparatus 1 can be used as a part of an in-line process processing system as shown in FIG. 5, for example. The process processing system shown in FIG. 5 has a structure in which a heating device 1, a process processing device 2, and an unload chamber 3 are connected.

  In the process processing system shown in FIG. 5, the substrate 100 is preheated to a predetermined process temperature by the heating device 1. Thereafter, the substrate 100 transported to the process processing apparatus 2 is subjected to process processing, and the substrate 100 is taken out from the unload chamber 3. The process processing apparatus 2 is a film forming apparatus, an etching apparatus, an ashing apparatus, or the like. When a plurality of substrates 100 are continuously processed by this process processing system, the substrate 100 to be processed next can be preheated by the heating device 1 while the process processing apparatus 2 performs the process processing of the substrate 100. it can. For this reason, the throughput is improved.

  For example, when the antireflection film of the solar cell is formed by the process processing device 2, the substrate 100 is preheated in the heating device 1 until the temperature of the substrate 100 reaches a predetermined process temperature. Then, the substrate 100 heated to the process temperature is carried into the process processing apparatus 2 and a film forming process is performed.

  At this time, if the measurement substrate temperature H measured by the temperature measuring device 30 is not accurate, the substrate 100 that is not set to the process temperature is carried into the process processing apparatus 2. For this reason, a desired film is not formed on the substrate 100. That is, the substrate 100 taken out from the unload chamber 3 does not satisfy desired characteristics, and the substrate 100 needs to be discarded or regenerated.

  However, according to the heating device 1 according to the embodiment of the present invention, by detecting an abnormality in the measurement substrate temperature H at an early stage, disposal or regeneration processing of the substrate 100 is suppressed. Therefore, the heating apparatus 1 is suitably used for an in-line process processing system.

  Of course, the heating device 1 may be used alone in the heating step included in a series of manufacturing steps of the semiconductor device. In this case, the substrate 100 that has been subjected to the heat treatment in which the heating energy Q does not satisfy the determination condition is reheated if reprocessing is possible.

<Modification>
When the temperature of the substrate 100 varies for each substrate 100 when stored in the chamber 10, the calculation device 51 calculates the heating energy Q supplied to the heater 20 in a certain temperature range. Also good. That is, after the heating of the substrate 100 by the heater 20 is started, the heating energy Q is calculated by the calculation device 51 for a period until the measured substrate temperature H reaches the set temperature Hs from the predetermined measurement start temperature.

  For example, the heating energy Q is calculated for a period in which the measurement substrate temperature H rises from the predetermined measurement start temperature Ha to the set temperature Hs shown in FIG. The measurement start temperature Ha is set to be higher than the highest temperature assumed as the temperature of the substrate 100 at the time of being stored in the chamber 10.

  For example, when the temperature of the substrate 100 when stored in the chamber 10 varies in the range of about 100 ° C. to 150 ° C., the measurement start temperature Ha is set to 200 ° C. Then, after the heating of the substrate 100 by the heater 20 is started at the heating start time t0, the measurement substrate temperature H reaches the set temperature Hs from the measurement start time ta when the measurement substrate temperature H reaches 200 ° C. of the measurement start temperature Ha. The calculation device 51 calculates the heating energy Q using the electrical quantity supplied to the heater 20 during the period up to the heating end time tb.

  Then, when the determination device 52 determines whether or not the calculated heating energy Q satisfies the determination condition, it can be determined whether or not the measurement substrate temperature H is accurate. At this time, the reference energy for setting the determination condition of the heating energy Q is the heating energy Q that is supplied to the heater 20 in order to raise the temperature of the substrate 100 from the measurement start temperature Ha to the set temperature Hs when normal. .

  From the above method, even when the temperature at the start of the heat treatment is not constant for each substrate 100, an abnormality in the measurement substrate temperature H can be detected at an early stage.

(Other embodiments)
As mentioned above, although this invention was described by embodiment, it should not be understood that the description and drawing which form a part of this indication limit this invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  The case where the heating energy Q is calculated using the drive current and the application time has been described as an example. However, the heating energy Q may be calculated using an electrical quantity other than the drive current. For example, the heating energy Q may be calculated from the total amount of power supplied from the drive power supply 40 to the heater 20.

  Further, during the heat treatment of the substrate 100, the calculation device 51 may calculate the heating energy Q in real time. Then, the determination device 52 issues an alarm at the timing when the heating energy Q exceeds the determination condition. Thereby, the time of unnecessary heat processing can be suppressed.

  Note that the temperature of the substrate tray 110 on which the substrate 100 is mounted may be measured as corresponding to the temperature of the substrate 100. For example, when it is difficult to directly measure the temperature of the substrate 100, the temperature of the substrate tray 110 is measured and the temperature of the substrate 100 is indirectly measured.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

DESCRIPTION OF SYMBOLS 1 ... Heating device 10 ... Chamber 11 ... Window 20 ... Heater 30 ... Temperature measuring device 40 ... Drive power supply 50 ... Control device 51 ... Calculation device 52 ... Judgment device 53 ... Power supply controller 54 ... Heating parameter measuring device 100 ... Substrate 110 ... Board tray

Claims (12)

A chamber;
A heater for heating the substrate stored in the chamber;
A temperature measuring device for measuring the temperature of the substrate stored in the chamber;
A calculation device for calculating heating energy supplied to the heater to heat the substrate until a measured substrate temperature of the substrate measured by the temperature measuring device reaches a set temperature;
And a determination device that determines whether or not the calculated heating energy satisfies a determination condition set based on reference energy that causes the temperature of the substrate to reach the set temperature.   The said calculation apparatus calculates the said heating energy using the electrical quantity for driving the said heater, and the application time when the said electrical quantity was supplied to the said heater. The heating device according to 1.   The heating device according to claim 2, wherein the calculation device calculates, as the heating energy, a product of an average value of the driving current for driving the heater during the application time and the application time.   The said calculation apparatus calculates the said heating energy about the period after the said measurement substrate temperature reaches | attains the said setting temperature after starting the heating of the said board | substrate with the said heater. The heating device according to any one of the above.   The calculation device calculates the heating energy for a period from the start of heating the substrate by the heater until the measurement substrate temperature reaches the set temperature from a predetermined measurement start temperature. The heating apparatus according to any one of claims 1 to 3.   The heating device according to claim 1, wherein the determination device issues an alarm when the calculated heating energy does not satisfy the determination condition. Heating the substrate stored in the chamber with a heater until the measurement substrate temperature of the substrate measured by the temperature measuring device reaches a set temperature;
Calculating heating energy supplied to the heater to heat the substrate until the measured substrate temperature reaches the set temperature;
A step of determining whether the calculated heating energy satisfies a determination condition set based on a reference energy for causing the temperature of the substrate to reach the set temperature.   The heating method according to claim 7, wherein the heating energy is calculated using an electrical amount for driving the heater and an application time during which the electrical amount is supplied to the heater. .   The heating method according to claim 8, wherein a product of an average value of the driving current for driving the heater in the application time and the application time is calculated as the heating energy.   The heating energy is calculated for a period from when the heating of the substrate by the heater is started until the measurement substrate temperature reaches the set temperature. The heating method described in 1.   10. The heating energy is calculated for a period from when the heating of the substrate by the heater is started until the measurement substrate temperature reaches the set temperature from a predetermined measurement start temperature. The heating method according to any one of the above.   The heating method according to any one of claims 7 to 11, wherein an alarm is issued when the calculated heating energy does not satisfy the determination condition.

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