JP2009157025A - Electro-optical device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent crosstalk caused by capacity coupling between a data line and a pixel electrode while holding a step shape between adjacent data lines in a layer where data lines are located, on the upper layer side. <P>SOLUTION: In an electro-optical device, a shield layer 400 is formed by a transparent conductive material on the upper layer side of a data line 6a and the lower layer side of a pixel electrode 9a and is formed continuously from a non-opening area 99b to an opening area 99a throughout a first part 66a located in an inter-data line area 99c and a second part 66b where the data line 6a is located, so as to be along a step shape generated between the first part 66a and the second part 66b on a surface of the layer where the data line 6a is disposed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal device and an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  In this type of electro-optical device, a non-opening region is provided so as to partition an opening region for each pixel, and data lines and scanning lines are wired in the non-opening region so as to intersect each other vertically and horizontally. In addition, pixel electrodes are formed corresponding to the intersections of the data lines and the scanning lines in the opening regions between the data lines of the adjacent pixels.

  In each pixel, the data line, the scanning line, and the pixel electrode are formed in a stacked structure in which conductive films constituting these are sequentially stacked. In such a stacked structure, when the data lines and the pixel electrodes are arranged so as to overlap each other in the vertical direction, there is a possibility that crosstalk may occur due to capacitive coupling between the conductive films constituting them.

  According to the configuration disclosed in Patent Document 1, a shield layer is formed of a metal material including, for example, aluminum (Al) so as to at least partially overlap each of the pixel electrode and the data line or the scanning line, and the pixel Crosstalk is prevented by reducing the parasitic capacitance between the electrode and the data line or the scanning line.

  In addition, in the layer where the data line of the above-described stacked structure is located, the data line is arranged in the non-opening region. Therefore, when attention is paid to the surface shape of the layer where the data line is located, the data line is adjacent to the portion where the data line is located. There can be a step between the pixel data lines.

Japanese Patent Laid-Open No. 5-203994

  Here, according to the configuration of the shield layer disclosed in Patent Document 1, it is necessary to perform patterning for forming the shield layer on the step as described above in the layer where the data line is located. The step described above may be relatively large due to the film thickness of the conductive film constituting the data line. Therefore, there is a possibility that patterning for forming the shield layer may be difficult due to such a step generated on the lower layer side of the shield layer. Further, since the shield layer is formed of a metal material, the shield layer is disposed so as to avoid the opening region, and the above-described step on the surface of the layer on which the data line is located may be larger. In order to avoid such a situation, it is necessary to form an insulating film having a flattened surface by CMP (Chemical Mechanical Polishing) or the like, relax the step on the lower layer side, and then form a shield layer. As a result, the manufacturing process becomes complicated.

  Here, when the color filter is formed on the substrate on which the pixel electrode is provided, after the shield layer is formed by performing the flattening process as described above, the color filter is formed on the upper layer side according to the thickness of the color filter. New steps can occur. In this case, it is conceivable to form a color filter on the upper layer side of the shield layer so as to alleviate the above-described step on the surface of the layer where the data line is located. However, as described above, if the step becomes larger due to the formation of the shield layer, it may be difficult to reduce the step even if the color filter is formed.

  The present invention has been made in view of the above problems and the like. For example, while maintaining the step shape between adjacent data lines in the layer where the data line is located on the upper layer side via the shield layer, the data line and the pixel It is an object of the present invention to provide an electro-optical device capable of preventing crosstalk due to capacitive coupling between electrodes, and an electronic apparatus including such an electro-optical device.

  In order to solve the above problems, the electro-optical device of the present invention includes a data line and a scanning line arranged on the substrate so as to intersect with each other in a non-opening region that partitions each of the opening regions of the plurality of pixels. Corresponding to the intersection of the data line and the scanning line, the pixel electrode is formed on the upper layer side of the data line and provided at least in the opening region, and is located on the upper layer side of the data line and from the pixel electrode. A shield layer formed of a transparent conductive material on a lower layer side, and the shield layer is between a first portion located in an opening area between the data lines and a second portion located in the data lines. Is formed continuously from the non-opening region to the opening region over at least the first and second portions so as to conform to the step shape generated in step S2.

  According to the electro-optical device of the present invention, a plurality of pixel electrodes are provided in a matrix in a region to be a display region on the substrate corresponding to the intersection of the data line and the scanning line. In the electro-optical device of the present invention, during the operation, for example, the supply of image signals from the data lines to the pixel electrodes is controlled for each pixel, so that an image display by a so-called active matrix method is possible. At this time, for example, liquid crystal as an electro-optical material modulates light according to an applied voltage based on an image signal supplied to the pixel electrode, and the modulated light is transmitted through the opening region of each pixel. That is, the “open area” according to the present invention refers to an area where light (display light) that actually contributes to display is emitted, for example, by transmission or reflection, and the “non-open area” according to the present invention is an aperture. An area that is provided so as to divide the area and from which display light is not emitted by shielding light or the like. In the pixel, the pixel electrode is disposed at least in the opening region, and the data line and the scanning line are disposed in the non-opening region.

  In each pixel, the pixel electrode, the data line, and the scanning line are each formed in a stacked structure in which conductive films are stacked, and the pixel electrode is disposed on the upper layer side of the data line. In the electro-optical device of the present invention, in the laminated structure on the substrate, a shield layer is formed of a transparent conductive material such as ITO (Indium Tin Oxide) on the upper layer side than the data line and on the lower layer side of the pixel electrode. The shield layer is formed so as to continuously extend from the non-opening region to the opening region over the first portion and the second portion on the surface of the layer where the data line is positioned in the stacked structure. Accordingly, the shield layer is disposed so as to overlap the data line and the pixel electrode, and is interposed between the data line and the pixel electrode in the stacking direction of the stacked structure, so that parasitic capacitance due to capacitive coupling between the data line and the pixel electrode is reduced. It is possible to prevent the occurrence of crosstalk.

  Here, on the surface of the layer where the data line is located, the first part located in the opening region between the data lines and the second part located in the non-opening region and where the data line is located are arranged in the data line. Due to the difference in level. That is, the first portion including the lower ground of the data line and the second portion including the upper surface of the data line have different heights from the substrate surface, and thus a step is generated. The shield layer is formed to cover the first and second portions so as to follow the step shape between the first portion and the second portion, that is, the surface shape of the first and second portions. Accordingly, on the surface of the shield layer, a step is formed between the portion covering the first portion and the portion covering the second portion, corresponding to the step between the first and second portions. Therefore, the step shape between the first and second portions can be held on the upper layer side through the shield layer.

  Further, since the shield layer is formed of a transparent conductive material, it is possible to prevent the display light from being shielded even if it extends to the opening region. Therefore, in order to obtain a pattern having a shape that avoids the opening region, patterning at a location close to the step between the first and second portions is not necessary. Accordingly, it is possible to avoid a situation where the step between the first and second portions becomes large due to the formation of the shield layer. Accordingly, since the step between the first and second portions is relaxed, a planarization process such as CMP before forming the shield layer becomes unnecessary. As a result, according to the present invention, it is possible to prevent the manufacturing process from becoming complicated.

  Here, when a color filter is formed in a laminated structure on the substrate together with the pixel electrode, the data line, and the scanning line, the step shape between the first and second portions is maintained on the upper layer side through the shield layer as described above. Therefore, by disposing the color filter in the area between the data lines, the step between the first and second portions can be reduced on the upper layer side than the shield layer. Therefore, it is possible to prevent a new level difference from occurring by arranging the color filter.

  In one aspect of the electro-optical device of the present invention, the shield layer is formed continuously over the plurality of pixels.

  According to this aspect, as compared with the case where the shield layer is patterned in an island shape for each pixel, patterning is not required at a position close to the step generated between the first and second portions, and the manufacturing process is further simplified. Can be made.

  In another aspect of the electro-optical device of the present invention, each of the data lines has a thickness corresponding to the step between the first and second portions on the upper layer side than the shield layer and on the lower layer side than the pixel electrode. It includes a colored layer formed in the opening region therebetween.

  According to this aspect, as described above, the color layer as the color filter is formed in the step between the first and second portions held on the upper layer side from the shield layer, in the area between the data lines with a film thickness corresponding to the step. It is formed. As a result, the step between the first and second portions can be relaxed on the upper layer side of the shield layer.

  In another aspect of the electro-optical device of the invention, an insulating film formed as a base of the pixel electrode is provided on the upper layer side of the shield layer.

  According to this aspect, as described above, the step between the first and second portions held on the upper layer side from the shield layer is buried, and the pixel electrode and the shield layer and data line on the lower layer side from the pixel electrode are connected. An insulating film for insulating between layers is formed. Therefore, the step between the first and second portions can be relaxed on the upper layer side than the shield layer.

  As described above, after forming a colored layer on the upper layer side of the shield layer so as to alleviate the step between the first and second portions, an insulating film is formed on the upper layer side of the colored layer. In addition, it is possible to prevent a relatively large level difference from being generated on the surface of the insulating film due to the level difference between the second portions or the level difference caused by the presence of the colored layer. As a result, the planarization process for the surface of the insulating film becomes unnecessary, and the manufacturing process can be further simplified.

  In the aspect including the insulating film, the insulating film is configured such that a contact hole is formed in the insulating film for electrically connecting the pixel electrode and the conductive film located on the lower layer side. Also good.

  According to this structure, as described above, the colored layer is formed so as to relieve the step between the first and second portions held on the upper layer side through the shield layer. It is also possible to reduce the depth of the contact hole opened.

  That is, as described above, the colored layer is colored on the upper layer side of the shield layer by forming the colored layer so as to reduce the step between the first and second portions held on the upper layer side through the shield layer. It is possible to prevent a new step due to the layer. Therefore, the insulating film does not have to be formed on the upper side of the colored layer so as to fill in and relieve the step newly generated by the colored layer, so that the thickness of the insulating film can be further reduced. Accordingly, since the depth of the contact hole opened in the insulating film can be reduced, it is possible to prevent a problem such as an increase in electrical resistance in the contact hole.

  In the aspect in which the contact hole is opened in the insulating film, the shield layer has an opening at a position corresponding to the contact hole, and the pixel electrode is formed by the shield layer through the contact hole. It is electrically connected to the conductive film located on the lower layer side.

  With this configuration, in the active matrix driving method, a transistor or the like that controls switching of the pixel electrode can be formed by sequentially laminating a semiconductor layer and a conductive film on the lower layer side than the shield layer. It is possible to reduce the size of the electro-optical device by arranging the pixels in the density and narrowing the display area.

  In this aspect, patterning for opening the opening to the shield layer is required, but the pattern of the opening is locally corresponding to the contact hole even if it is close to the step between the first and second portions. Since the arrangement area is small, it can be easily performed. Therefore, it is possible to prevent the manufacturing process from becoming complicated by opening the opening.

  As described above, in the aspect in which the opening is formed in the shield layer, the contact hole may be positioned between the data lines.

  If comprised in this way, since an opening part can be arrange | positioned so that it may not adjoin to the location where the level | step difference has arisen between the 1st and 2nd part in a shield layer, it opens an opening part with respect to a shield layer. It is possible to perform patterning for making it easier.

  In order to solve the above-described problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the electro-optical device of the present invention described above is included, the projection display device, the mobile phone, and the like that can simplify the manufacturing process and perform high-quality display. Various electronic devices such as an electronic notebook, a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

  Such an operation and other advantages of the present invention will become apparent from the best mode for carrying out the invention described below.

  Embodiments of an electro-optical device and an electronic apparatus according to the present invention will be described below with reference to the drawings. In this embodiment, as an example of the electro-optical device, a TFT active matrix driving type liquid crystal device with a built-in driving circuit is taken as an example.

<First Embodiment>
First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of the liquid crystal device as viewed from the counter substrate side together with the components formed on the TFT array substrate, and FIG. 2 is a cross-sectional view taken along the line H-H ′ in FIG. 1. is there.

  1 and 2, the liquid crystal device according to the present embodiment includes a TFT array substrate 10 and a counter substrate 20 which are arranged to face each other. The TFT array substrate 10 is a transparent substrate such as a quartz substrate, a glass substrate, or a silicon substrate. The counter substrate 20 is also a transparent substrate made of the same material as the TFT array substrate 10, for example. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are provided in a seal material provided in a seal region around the image display region 10a. 52 are bonded to each other.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. Further, for example, in the sealing material 52, a gap material 56 such as a glass fiber or a glass bead for dispersing the distance (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed. The liquid crystal device according to this embodiment is small and suitable for performing enlarged display for a light valve of a projector.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  On the TFT array substrate 10, a data line driving circuit 101, a sampling circuit 7, a scanning line driving circuit 104, and an external circuit connection terminal 102 are formed in the peripheral area located around the image display area 10 a.

  In the peripheral region on the TFT array substrate 10, the data line driving circuit 101 and the external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 on the outer peripheral side from the seal region. Further, a region located on the inner side of the seal region in the peripheral region on the TFT array substrate 10 is covered with the frame light shielding film 53 along one side of the image display region 10 a along one side of the TFT array substrate 10. Thus, the sampling circuit 7 is arranged.

  The scanning line driving circuit 104 is provided along two sides adjacent to one side of the TFT array substrate 10 so as to be covered with the frame light shielding film 53. Further, in order to electrically connect the two scanning line driving circuits 104 provided on both sides of the image display region 10a in this way, the TFT array substrate 10 is covered with the frame light shielding film 53 along the remaining side. A plurality of wirings 105 are provided.

  In the peripheral region on the TFT array substrate 10, vertical conduction terminals 106 are disposed in regions facing the four corners of the counter substrate 20, and vertical conduction is provided between the TFT array substrate 10 and the counter substrate 20. A material is provided corresponding to the vertical conduction terminal 106 and electrically connected to the terminal 106.

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which pixel switching TFTs as drive elements, wiring lines such as scanning lines and data lines are formed is formed. In the image display region 10a, pixel electrodes 9a are provided in a matrix on the upper layer of wiring such as pixel switching TFTs (Thin Film Transistors), scanning lines, and data lines. An alignment film 16 is formed on the pixel electrode 9a. In the present embodiment, the pixel switching element may be constituted by various transistors, TFD, or the like in addition to the TFT.

  On the other hand, a light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. The light shielding film 23 is formed of, for example, a light shielding metal film or the like, and is patterned, for example, in a lattice shape in the image display region 10a on the counter substrate 20. A counter electrode 21 made of a transparent material such as ITO is formed on the light shielding film 23 (below the light shielding film 23 in FIG. 2) so as to face the plurality of pixel electrodes 9a. An alignment film 22 is formed on the upper side (below the counter electrode 21 in FIG. 2).

  The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films. A liquid crystal storage capacitor is formed between the pixel electrode 9 a and the counter electrode 21 by applying a voltage to each of the liquid crystal devices during driving.

  Although not shown here, on the TFT array substrate 10, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, a plurality of data lines are precharged at a predetermined voltage level prior to the image signal. A precharge circuit to be supplied, an inspection circuit for inspecting the quality, defects, etc. of the liquid crystal device during manufacture or at the time of shipment may be formed.

  Next, an electrical configuration of the pixel portion of the liquid crystal device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the liquid crystal device according to this embodiment.

  In FIG. 3, a pixel electrode 9a and a TFT 30 are formed in each of a plurality of pixels formed in a matrix that forms the image display region 10a. The TFT 30 is electrically connected to the pixel electrode 9a, and performs switching control of the pixel electrode 9a during operation of the liquid crystal device. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good.

  The scanning line 11a is electrically connected to the gate of the TFT 30, and the liquid crystal device according to this embodiment applies the scanning signals G1, G2,..., Gm to the scanning line 11a in a pulsed manner at a predetermined timing. It is configured to apply in a line sequential order. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,..., Sn supplied from the data line 6a is obtained by closing the TFT 30 as a switching element for a certain period. It is written at a predetermined timing. Image signals S 1, S 2,..., Sn written in a liquid crystal as an example of an electro-optical material via the pixel electrode 9 a are held for a certain period with the counter electrode formed on the counter substrate.

  The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2) modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The transmittance for light is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added electrically in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21 (see FIG. 2). ing. The storage capacitor 70 is a capacitive element that functions as a storage capacitor that temporarily holds the potential of each pixel electrode 9a in response to supply of an image signal. One electrode of the storage capacitor 70 is electrically connected in parallel with the pixel electrode 9a and connected to the drain of the TFT 30, and the other electrode is connected to a fixed potential capacitor line 300 so as to have a constant potential. According to the storage capacitor 70, the potential holding characteristic in the pixel electrode 9a is improved, and display characteristics such as contrast improvement and flicker reduction can be improved.

  Next, a specific configuration of the pixel portion will be described with reference to FIGS. FIG. 4 is a plan view showing an example of the arrangement relationship, focusing on the main components of the pixel portion, and FIG. 5 is a cross-sectional portion of the pixel portion in the direction along the line XX0 ′ of FIG. FIG. 6 is a cross-sectional view showing the main structure of the pixel portion. In FIGS. 4 to 6, the scales of the layers and members are different from each other so that the layers and members can be recognized on the drawings. This is the same for the corresponding drawings described later. 7 to 10 to be described later in addition to FIGS. 4 to 6, only the configuration on the TFT array substrate side will be described in the configuration described with reference to FIG. 1 or 2. In the figure, the portion located above the pixel electrode 9a is not shown, and its configuration is shown by paying attention to main components on the TFT array substrate 10.

  In FIG. 4, a plurality of pixel electrodes 9 a are provided in a matrix on the TFT array substrate 10. A data line 6a and a scanning line 11a are provided along the vertical and horizontal boundaries of the pixel electrode 9a. That is, the scanning line 11a extends along the X direction, and the data line 6a extends along the Y direction so as to intersect the scanning line 11a.

  The scanning line 11a, the data line 6a, the storage capacitor 70, the TFT 30, the relay layer 93, and the like, when viewed in plan on the TFT array substrate 10, have an opening area 99a of each pixel corresponding to the pixel electrode 9a (that is, in each pixel). , A region where light that actually contributes to display is transmitted or reflected) is disposed in the non-opening region 99b. That is, the scanning lines 11a, the data lines 6a, the storage capacitors 70, the TFTs 30, the relay layers 93, and the like are arranged not in the opening area 99a of each pixel but in the non-opening area 99b so as not to hinder display. Yes.

  The non-opening region 99b is formed of, for example, at least a part of the conductive film constituting the data line 6a, the scanning line 11a, or the storage capacitor 70 on the TFT array substrate 10 side with a light-shielding material. Thus, the region that can block light incident on each pixel is defined on the TFT array substrate 10 side. Preferably, as described with reference to FIG. 2, the non-opening region 99b is defined together with the light shielding film on the TFT array substrate 10 side also by the light shielding film 23 formed on the counter substrate 20 side.

  Hereinafter, the main configuration of the stacked structure in the pixel portion on the TFT array substrate 10 in FIG. 5 or FIG. 6 will be described in order from the lower layer side with reference to FIG.

  5 or 6, the TFT 30 is provided on the insulating film 12 formed on the TFT array substrate 10. The TFT 30 includes a semiconductor layer 1a and a gate electrode 3a. For example, the gate electrode 3a is integrally formed as a part overlapping the semiconductor layer 1a and the gate insulating film 2 in the scanning line 11a. That is, according to the configuration shown in FIG. 5 or FIG. 6, the scanning line 11a is formed in the same layer as the TFT 30 so as to extend in the X direction above the semiconductor layer 1a (see FIG. 4).

  Although the detailed configuration of the semiconductor layer 1a of the TFT 30 is not shown in FIG. 6, the TFT 30 preferably has an LDD (Lightly Doped Drain) structure. Alternatively, the TFT 30 may be an offset structure in which no impurity is implanted into a region corresponding to the LDD region in the LDD structure, or may be a self-aligned structure formed by implanting impurities at a high concentration using the gate electrode as a mask. Good.

  In FIG. 5 or FIG. 6, a storage capacitor 70 is provided on the upper layer side than the TFT 30 via the interlayer insulating film 41. The storage capacitor 70 is formed by disposing the lower capacitor electrode 71 and the upper capacitor electrode 300 to face each other with the dielectric film 75 interposed therebetween. The upper capacitor electrode is formed as a part of the capacitor line 300 shown in FIG. 3, and can function as a fixed potential side capacitor electrode maintained at a fixed potential.

  The lower capacitor electrode 71 is a pixel potential side capacitor electrode electrically connected to the semiconductor layer 1a of the TFT 30 and the pixel electrode 9a. More specifically, the lower capacitor electrode 71 is electrically connected to the semiconductor layer 1a through the contact hole 83 (see FIG. 6) and is connected to the relay layer 93 through the contact hole 84 (see FIG. 6). Electrically connected. Further, the relay layer 93 is electrically connected to the pixel electrode 9a through a contact hole 85 (see FIGS. 4 and 6). That is, the lower capacitor electrode 71 relays the electrical connection between the semiconductor layer 1a and the pixel electrode 9a together with the relay layer 93.

  5 or 6, the data line 6 a and the relay layer 93 are provided on the upper layer side of the storage capacitor 70 on the TFT array substrate 10 via the interlayer insulating film 42. As shown in FIG. 6, the data line 6a is electrically connected to the semiconductor layer 1a through a contact hole 81 penetrating the gate insulating film 2, the interlayer insulating film 41, the dielectric film 75, and the interlayer insulating film. ing. Further, as shown in FIG. 4, the data line 6a extends in the Y direction so as to intersect the scanning line 11a.

  In FIG. 6, the relay layer 93 is formed on the interlayer insulating film 42 in the same layer as the data line 6a. For the data line 6a and the relay layer 93, a thin film made of a conductive material such as a metal film is formed on the interlayer insulating film 42 using a thin film forming method, and the thin film is partially removed, that is, patterned. Thus, they are formed apart from each other. Therefore, since the data line 6a and the relay layer 93 can be formed in the same process, the manufacturing process of the device can be simplified.

  5 or 6, a shield layer 400 is formed of a transparent conductive material such as ITO on the upper side of the data line 6 a and the relay layer 93 through the interlayer insulating film 43, and the interlayer insulating film 44 is formed from the shield layer 400. A colored layer Cf is further formed on the upper layer side.

  In FIG. 5 or FIG. 6, the pixel electrode 9a is formed on an upper layer side than the colored layer Cf via an interlayer insulating film 45 formed as an overcoat film as a base. The pixel electrode 9 a is electrically connected to the semiconductor layer 1 a via the lower capacitor electrode 71, contact holes 83, 84 and 85, and the relay layer 93. The shield layer 400 has an opening 410 at a position corresponding to the contact hole 85, and the contact hole 85 is a hole formed so as to penetrate the interlayer insulating layers 43, 44 and 45 in the opening 410. A transparent conductive material constituting the pixel electrode 9a such as ITO is formed on the inner wall of the substrate. An alignment film 16 (see FIG. 2) subjected to a predetermined alignment process such as a rubbing process is provided on the upper surface of the pixel electrode 9a.

  Here, comparative examples for the present embodiment will be described with reference to FIGS. 7 and 8 are cross-sectional views showing the configuration of the cross-sectional portion of the pixel portion corresponding to FIG. 6 for the comparative example. In addition, about a comparative example, only a different point from this embodiment is demonstrated, In FIG. 7 or FIG. 8, about the structure similar to this embodiment, the same code | symbol as FIG. Sometimes omitted.

  According to the configuration of one comparative example shown in FIG. 7, the colored layer Cf is formed through the interlayer insulating film 43 on the upper layer side than the data line 6a, and further on the upper layer side through the interlayer insulating film 45. A pixel electrode 9 a electrically connected to the relay layer 93 through the contact hole 85 is formed. In this case, there is a possibility that the data line 6a and the pixel electrode 9a may be capacitively coupled and generate crosstalk in a portion where the data line 6a and the pixel electrode 9a are adjacently overlapped with each other via the interlayer insulating films 43 and 45 in the vertical direction.

  On the other hand, in the configuration of another comparative example shown in FIG. 8, the shield layer 420 is formed on the upper layer side of the data line 6a by, for example, a metal material so as to at least partially overlap each of the data line 6a and the pixel electrode 9a. It is formed via an interlayer insulating film 43. The shield layer 420 is interposed between the data line 6a and the pixel electrode 9a in the vertical direction of the stacked structure, and can prevent the capacitive coupling from occurring between them. In FIG. 8, the relay electrode 422 is disposed in the same layer as the shield layer 420 in order to electrically connect the pixel electrode 9 a to the relay layer 93. The pixel electrode 9 a is electrically connected to the relay layer 93 via the contact hole 87 opened through the contact hole 85 and the interlayer insulating film 43, and the relay electrode 422.

  Here, returning to the configuration of the pixel portion in the present embodiment, referring to FIG. 4 or FIG. 5, in the layer where the data line 6a is located, the data line 6a and the relay layer 93 are disposed in the non-opening region 99b, and In the inter-data line region 99c partitioned by the data line 6a between the adjacent pixel portions, the opening region 99a is a vacant region where no conductive film or the like is formed on the interlayer insulating film 42. Therefore, focusing attention on the surface shape of the layer where the data line 6a is located, as well shown in FIG. 5, the first portion 66a located in the inter-data line region 99c and the second portion 66b where the data line 6a is located A level difference may occur due to the height difference d0. This step may be relatively large due to the film thickness of the data line 6a.

  In the comparative example shown in FIG. 7, if the shield layer is formed so as to be interposed between the pixel electrode 9a and the data line 6a in the same manner as in FIG. 8, the shield layer is formed by the above-described step formed on the lower layer side. For this reason, there is a risk that patterning for this purpose becomes difficult. At this time, when the shield layer is formed of a metal material, the shield layer is disposed on the data line 6a while avoiding the opening region 99a (see FIG. 4). There is a risk of further increase.

  Therefore, in order to avoid such a situation, in the configuration of the comparative example shown in FIG. 8, the surface of the interlayer insulating film 43 which is the base of the shield layer 420 is flattened by performing, for example, CMP processing, and the data line 6a. The effect of the level difference of the layer where the is located is reduced. In FIG. 8, the colored layer Cf is disposed in the same layer as the shield layer 420 and on the upper layer side. In order for the colored layer Cf to function as a color filter, it is necessary to form the colored layer Cf with a relatively large film thickness, and a new step is generated in the same layer as the shield layer 420. Therefore, it may be necessary to perform a planarization process on the surface of the interlayer insulating film 45 in order to form the interlayer insulating film 45 and further reduce the influence of the step due to the colored layer Cf. As a result, the manufacturing process may become complicated.

  On the other hand, in FIG. 7, the colored layer Cf is formed so as to alleviate the level difference of the layer where the relatively large data line 6a is located. However, as described above, if the effect of the step on the surface of the layer on which the data line 6a is located is further increased by the formation of the shield layer, it becomes difficult to alleviate the step even if the colored layer Cf is formed. Problems arise.

  On the other hand, in this embodiment, in FIGS. 4 to 6, the shield layer 400 is disposed on the upper layer side than the data line 6a and on the lower layer side than the pixel electrode 9a. (That is, a solid shape, for example, in an area excluding the area where the contact hole 85 is formed in the image display area 10a). In other words, the shield layer 400 is on the upper layer side of the data line 6a and on the lower layer side of the pixel electrode 9a over the first portion 66a and the second portion 66b on the surface of the layer where the data line 6a is located (that is, the first layer 66b). The non-opening region 99b extends continuously from the non-opening region 99b so as to cover the first portion 66a and the second portion 66b. Accordingly, the shield layer 400 is disposed so as to overlap the data line 6a and the pixel electrode 9a, and is interposed between the data line 6a and the pixel electrode 9a in the stacking direction of the stacked structure, and thus the capacitance between the data line 6a and the pixel electrode 9a. It is possible to reduce parasitic capacitance due to coupling and prevent occurrence of crosstalk.

  Further, as well shown in FIG. 5 or FIG. 6, the shield layer 400 conforms to the step shape between the first portion 66a and the second portion 66b, that is, along the surface shape of the first portion 66a and the second portion 66b. The first portion 66a and the second portion 66b are formed. Therefore, on the surface of the shield layer 400, the height difference between the portion covering the first portion 66a and the portion covering the second portion 66b corresponds to the height difference d0 of the step between the first portion 66a and the second portion 66b. d1 occurs and a step is formed. Therefore, the step shape between the first portion 66a and the second portion 66b can be held on the upper layer side through the shield layer 400.

  Here, in FIG. 4, since the shield layer 400 is formed of a transparent conductive material, it is possible to prevent the display light from being shielded even if it extends to the opening region 99a. Therefore, in order to obtain a pattern having a shape that avoids the opening region 99a, patterning at a location close to the step between the first portion 66a and the second portion 66b becomes unnecessary. Accordingly, it is possible to avoid a situation in which the step generated between the first portion 66a and the second portion 66b becomes larger due to the formation of the shield layer 400 on the upper layer side. Therefore, since the step generated between the first portion 66a and the second portion 66b is relaxed on the upper layer side, a planarization process such as CMP before forming the shield layer 400 becomes unnecessary. As a result, according to the present invention, it is possible to prevent the manufacturing process from becoming complicated.

  4, the shield layer 400 is formed so as to continuously cover the first portion 66a and the second portion 66b as shown in FIG. 5, and continuously over a plurality of pixels constituting the image display area 10a. It is provided as a substantially solid pattern (more specifically, a solid pattern other than the opening 410). Therefore, as compared with the case where the shield layer 400 is patterned in an island shape for each pixel, patterning at a location close to the step generated between the first portion 66a and the second portion 66b becomes unnecessary, and the manufacturing process is further simplified. Can be made.

  Here, in FIG. 5 or FIG. 6, the colored layer Cf typically displays, for example, light corresponding to any of red (R), G (green), and blue (B) in the pixel as display light. It is formed so that it can be emitted as. In FIG. 5, a level difference d2 is generated on the surface of the interlayer insulating film 44 in accordance with the level difference d1 generated on the surface of the shield layer 400 corresponding to the level difference between the first portion 66a and the second portion 66b. ing. The colored layer Cf is formed in the inter-data-line region 99c with a film thickness corresponding to the step height difference d0 between the first portion 66a and the second portion 66b. As a result, the step on the surface of the interlayer insulating film 44 corresponding to the step between the first portion 66a and the second portion 66b can be relaxed. For example, the step height difference d0 between the first portion 66a and the second portion 66b is about 1.5 μm, and the thickness of the colored layer Cf is about 1.5 to 2.0 μm.

  Accordingly, a relatively large step is generated on the surface of the interlayer insulating film 45 above the colored layer Cf due to a step between the first portion 66a and the second portion 66b or a step caused by the presence of the colored layer Cf. Can be prevented. As a result, the planarization process on the surface of the interlayer insulating film 45 becomes unnecessary, and the manufacturing process can be further simplified.

  Further, as shown in FIG. 4 or FIG. 6, a contact hole 85 is opened in the interlayer insulating film 45. Here, according to the comparative example shown in FIG. 8, as already described, a step is formed in the same layer as the shield layer 420 due to the colored layer Cf. Therefore, the interlayer insulating film 45 is formed to alleviate this. The The film thickness of the interlayer insulating film 45 shown in FIG. 8 is larger than that of the structure of the present embodiment shown in FIG. 6 in order to embed a step due to the colored layer Cf. As a result, the depth of the contact hole 85 is also increased. May grow.

  On the other hand, as shown in FIG. 5 or FIG. 6, the colored layer Cf is formed by embedding a step on the surface of the interlayer insulating film 44, and therefore, a new layer due to the colored layer Cf is formed on the upper layer side. A step can be prevented from occurring. Therefore, the depth of the contact hole 85 shown in FIG. 6 can be further reduced. Thereby, it is possible to prevent problems such as an increase in electrical resistance in the contact hole 85.

  4 to 6, the shield layer 400 has an opening 410 corresponding to the contact hole 85. Therefore, even if the shield layer 400 is provided in a substantially solid pattern as shown in FIG. 4, the TFT 30 and the storage capacitor 70 can be formed on the lower layer side of the shield layer 400 to form a laminated structure. It is possible to reduce the size of the electro-optical device by arranging pixels at high density and narrowing the image display region 10a.

  In this case, patterning is required to open the opening 410 in the shield layer 400, but the pattern of the opening 410 is a contact hole even if it is close to the step between the first portion 66a and the second portion 66b. Since it becomes a local small arrangement area corresponding to 85, it can carry out easily. Therefore, it is possible to prevent the manufacturing process from becoming complicated by opening the opening 410. In the present embodiment, since the contact hole 85 is located in the inter-data line region 66c in FIG. 4, the contact hole 85 is not close to a portion where a step is generated between the first portion 66a and the second portion 66b in the shield layer 400. The opening 410 can be disposed in the bottom. Therefore, patterning for opening the opening 410 in the shield layer 400 can be performed more easily.

Second Embodiment
Next, a second embodiment of the present invention will be described with reference to FIG. 9 or FIG. The second embodiment is different from the first embodiment in that the colored layer is not formed in a laminated structure on the TFT array substrate side. Therefore, only the points different from the first embodiment will be described below with reference to the drawings, and the same configuration as the first embodiment will be described with reference to FIGS. 1 to 6 and FIG. 9 or FIG. In FIG. 10, the same reference numerals are given, and redundant description may be omitted.

  9 is a cross-sectional view illustrating a configuration of a cross-sectional portion of the pixel portion corresponding to FIG. 5, and FIG. 10 is a cross-sectional view illustrating a configuration of a cross-sectional portion of the pixel portion corresponding to FIG.

  In FIG. 9 or FIG. 10, the pixel electrode 9 a is formed on the upper layer side through the interlayer insulating film 45 from the shield layer 400 on the TFT array substrate 10. Further, compared with the configuration of the first embodiment shown in FIG. 5 or FIG. 6, the colored layer is not formed on the TFT array substrate 10 side, for example, is formed on the counter substrate 20 side, or in the electro-optical device. Is not provided with a color filter. In the latter case, color display is possible as in the projector described later, or color display is not performed and monochrome display is performed with display light corresponding to white and black.

  In the second embodiment, as in the first embodiment, crosstalk based on capacitive coupling between the data line 6a and the pixel electrode 9a is prevented, and the step shape between the first portion 66a and the second portion 66b is changed to a shield layer. It is possible to hold it on the upper layer side through 400.

  Therefore, as in the first embodiment, the planarization process for the surface of the interlayer insulating film 43 that is the base of the shield layer 400 is not necessary, and the manufacturing process can be prevented from becoming complicated. 9 or 10, the step between the first portion 66a and the second portion 66b held above the shield layer 400 is buried to form the interlayer insulating film 45. Therefore, the step between the first portion 66a and the second portion 66b can be relaxed on the upper layer side of the shield layer 400.

<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described. FIG. 11 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 11, a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  In addition to the electronic device described with reference to FIG. 11, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, and an electronic notebook , Calculators, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention can be applied to a reflective liquid crystal device (LCOS) or the like.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. In addition, an electronic apparatus including the electro-optical device is also included in the technical scope of the present invention.

It is a schematic plan view of a liquid crystal device. It is the HH 'sectional view taken on the line of FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms an image display region of the liquid crystal device according to the present embodiment. It is a top view which shows an example of the arrangement | positioning relationship paying attention to the main components of a pixel part. FIG. 5 is a cross-sectional view illustrating a configuration of a cross-sectional portion of a pixel portion in a direction along the line XX0 ′ in FIG. 4. It is sectional drawing which shows the main structures of a pixel part. FIG. 7 is a cross-sectional view (No. 1) illustrating a configuration of a cross-sectional portion of a pixel portion corresponding to FIG. FIG. 7 is a cross-sectional view (No. 2) illustrating a configuration of a cross-sectional portion of a pixel portion corresponding to FIG. It is sectional drawing which shows the structure of the cross-sectional part of the pixel part corresponding to FIG. 5 about 2nd Embodiment. It is sectional drawing which shows the structure of the cross-sectional part of the pixel part corresponding to FIG. 6 about 2nd Embodiment. It is a top view which shows the structure of the projector which is an example of the electronic device to which a liquid crystal device is applied.

Explanation of symbols

  6a ... Data line, 9a ... Pixel electrode, 10 ... TFT array substrate, 11a ... Scanning line, 66a ... First part, 66b ... Second part, 99a ... Opening area, 99b ... Non-opening area, 99c ... Inter-data line area 400 ... shield layer, 99b ... first part

Claims (8)

On the board
A data line and a scanning line arranged so as to cross each other in a non-opening region that partitions each open region of a plurality of pixels;
In correspondence with the intersection of the data line and the scanning line, a pixel electrode formed on the upper layer side than the data line and provided at least in the opening region;
A shield layer formed of a transparent conductive material on the upper layer side of the data line and on the lower layer side of the pixel electrode, and
The shield layer extends over at least the first and second portions so as to follow a step shape generated between a first portion located in an opening region between the data lines and a second portion where the data lines are located. The electro-optical device is formed continuously from the non-opening region to the opening region.   The electro-optical device according to claim 1, wherein the shield layer is formed continuously over the plurality of pixels.   On the upper layer side than the shield layer and on the lower layer side than the pixel electrode, there is provided a colored layer formed in an opening region between the data lines with a film thickness corresponding to the step between the first and second portions. The electro-optical device according to claim 1 or 2.   4. The electro-optical device according to claim 1, further comprising an insulating film formed as a base of the pixel electrode on an upper layer side than the shield layer. 5.   5. The electro-optic according to claim 4, wherein a contact hole is formed in the insulating film for electrically connecting the pixel electrode and a conductive film located on the lower layer side. apparatus. The shield layer has an opening at a position corresponding to the contact hole,
The electro-optical device according to claim 5, wherein the pixel electrode is electrically connected to a conductive film located on a lower layer side than the shield layer through the contact hole.   The electro-optical device according to claim 6, wherein the contact hole is located between the data lines.   An electronic apparatus comprising the electro-optical device according to claim 1.

Images