JP2009147255A - Metallized film and metallized film capacitor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metallized film capacitor which is improved in withstand voltage characteristic without lowering the withstand current of the capacitor even with a narrow film of ≤15 mm in width. <P>SOLUTION: The metallized film has at least one or more layers of metal thin films on one surface of a dielectric film, and the film has an electrode-side end and a margin-side end, wherein at least the electrode-side end is in a wave shape and the metal thin films have a resistance of 3 to 10 Ω/Square. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a metallized film capacitor excellent in current resistance and voltage resistance, and a metallized film constituting the metallized film capacitor.

  With the rapid development of digital home appliances in recent years, the characteristics of capacitors that are used in large numbers on semiconductor substrates inside devices have come to be regarded as important. In particular, in a digital device such as a thin display, it is necessary to increase the voltage of a current flowing through a semiconductor substrate inside the device as the function increases, and an improvement in the withstand voltage of the capacitor is required.

  Conventionally, as a method of improving the withstand voltage of a capacitor, the metal thin film formed on the upper surface of the film is thinned to have a high film resistance, and the metal thin film near the insulation defect is evaporated and scattered by the instantaneous short-circuit current flowing at the time of dielectric breakdown. There is a method for facilitating the functioning of so-called self-healing (self-healing) that recovers insulation by a method (Patent Document 1).

By the way, when the metal thin film is formed on the side surface of the capacitor element, the conventional method of forming the thin metal film on the upper surface of the film has a small contact area between the thin metal film and the metal thin film. There is a problem of lowering the current resistance. Therefore, conventionally, in order to solve this problem, a so-called heavy edge is formed in which the metal thin film is thickened only in the vicinity of the side end portion where the metallized metal film contacts (Patent Document 2).
JP-A-6-290990 JP-A-9-102434

  However, in the case of forming a heavy edge in a narrow film having a width of 15 mm or less, the formation accuracy of the heavy edge width is insufficient. In other words, the metal film is thinly formed and a heavy edge is not formed at all. That is, the voltage resistance of the capacitor cannot be improved in the portion where the high film resistance is not obtained, and the current resistance of the capacitor is lowered in the portion where the heavy edge is not formed.

  In the present invention, at least one metal thin film is formed on one surface of a dielectric film, the film width is 15 mm or less, the film has an electrode side end portion and a margin side end portion, and at least the electrode side end portion is The metallized film has a corrugated shape and a film resistance of the metal thin film in a range of 3Ω / □ or more and less than 10Ω / □.

  Moreover, this invention is a metallized film capacitor which uses the metallized film of this invention as a constituent material.

  According to the present invention, it is possible to improve the voltage resistance without reducing the current resistance of the capacitor even in a narrow film having a width of 15 mm or less.

  An embodiment of the present invention will be described with reference to the drawings. Note that the drawings are schematic diagrams for easy understanding of the film structure of the product of the present invention, and therefore the size and the like are different from the actual ones.

  FIG. 1 is a diagram showing a structure of a metallized film according to the present embodiment. 1A is a plan view and FIG. 1B is a cross-sectional view. The metallized film (1) of the present invention forms a metal thin film (3) on the upper surface (7) of the dielectric film (2), and the upper surface (7) of one side end (10) of the dielectric film (2). ) Is provided with a margin (4) where no metal thin film is formed. A metal thin film is formed on the upper surface (7) of the other side end (12). Further, the side end portion (12) on which the metal thin film of the dielectric film is formed is cut so as to have a corrugated shape. In FIG. 1, only the side end portion 12 where the metal thin film is formed is cut so as to have a corrugated shape. However, both end portions (10, 12) are cut so as to have a corrugated shape. May be.

  In this specification, the surface on which the metal thin film (3) is formed on the dielectric film (2) is the upper surface (7), the opposite surface is the lower surface (8), and the side edge on the side where the margin (4) is applied. The marginal end (10) is the margin side end (10), the side end (12) on the side with the metal thin film is the electrode side end (12), and the margin side end (10) and the electrode side end (12) The end faces are referred to as a margin side end face (11) and an electrode side end face (13), respectively.

  In addition, the distance from the top of the peak of the corrugated shape to the bottom of the trough at the side end portion cut into the corrugated shape is called amplitude (20). In addition, a wave-shaped peak means the part protruded to the outer side of the dielectric film (2), and a trough means the part dented to the inner side of the dielectric film (2).

  Next, the material and manufacturing method of each part of this metallized film capacitor will be described. The dielectric film (2) that can be used for the metallized film of the present invention is not particularly limited as long as it is a film substrate on which a conductive metal can be deposited, but polyethylene, non-stretched or stretched polypropylene, polymethylpentene, cycloolefin. Organic polymer film made of a polymer, norbornene polymer, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyamideimide, polyphenylene sulfide, polyetherimide, polyimide, liquid crystal polymer, or a mixture of two or more of these and a polymer alloy From the viewpoint of excellent withstand voltage characteristics, dielectric loss tangent, and insulation resistance characteristics when a capacitor is formed, a non-stretched or stretched polypropylene film is particularly preferably used.

  Moreover, even when various coatings, sputtering, CVD, and vapor deposition films are provided on the vapor deposition surface side of these film bases in order to improve various properties such as increasing the dielectric constant, as long as the object of the present invention is achieved. The kind of film base material is not specifically limited.

  The polypropylene film preferably used as the film substrate of the dielectric film (2) is a film made of a copolymer of propylene and another α-olefin (for example, ethylene, butene, etc.) in addition to a film made of a homopolymer of polypropylene. Or a film made of a blend of polypropylene and another α-olefin polymer (for example, polyethylene, polybutene, etc.).

Moreover, the additive contained in the film base material of the dielectric film (2) is not particularly limited, and may be appropriately selected and added as long as the target characteristics of the present invention are not affected. The film substrate surface may be subjected to surface treatment such as corona discharge treatment, flame treatment or plasma treatment, or lamination of an adhesive coating layer, a resin coating layer, a resin layer by melt extrusion, etc. It is preferable to perform corona discharge treatment from the viewpoint that it is easy to make the wetting tension uniform. The thickness of the dielectric film used in the present invention is not particularly limited and can be appropriately determined according to the use of the capacitor. From the viewpoint of reducing the size and increasing the capacity, the thickness is preferably 0.1 μm to 10 μm, preferably 2 μm to 7 μm.

Examples of the material of the metal thin film (3) that can be used for the metallized film of the present invention include aluminum, zinc, tin, nickel, chromium, iron, copper, titanium, and alloys containing these. From the viewpoint of the electrical characteristics and productivity of the capacitor, zinc, aluminum, or an alloy containing them is preferably used. More preferably, the metal layer contains 90% by mass or more of aluminum. Specifically, it is preferable to use aluminum alone or an aluminum alloy containing 90% by mass or more of aluminum from the viewpoint of moisture resistance. The metal thin film (3) can be formed by, for example, a vacuum film forming method. There are various vacuum deposition methods such as vacuum deposition, sputtering, laser brazing, etc., which can be determined appropriately depending on the type of metal thin film to be formed, but vacuum deposition is effective from the viewpoint of production efficiency. . The film thickness of the metal thin film (3) may be formed so as to incline from one side end portion forming the metallicon electrode to the opposite side end portion facing each other.

  Further, the metal thin film (3) may have a structure in which one or more metal thin films are laminated for the purpose of imparting moisture resistance and conductivity.

  As a method for forming the corrugated shape of the side end portion of the metallized film (1) in the present invention, there are, for example, a method using a slitter device and a method using laser light. As a method using a slitter device, a corrugated shape can be formed by cutting a film using a slitter device provided with a curved cutter. On the other hand, the method using laser light is a method of forming a corrugated shape by irradiating laser light so as to draw a wave on the side edge of the film. From the viewpoint of mass production, the former slitter device is used. The method used is preferred.

  FIG. 2 is a cross-sectional view showing the structure of the metallized film capacitor (100) according to the present embodiment. More specifically, two metallized films (1 and 50) are overlapped and wound twice, and a metallicon (110) treated on both ends is cut along the core (101). It is.

  The metallized film (50) is a metallized film provided with a margin (4) on the side end surface opposite to the metallized film (1). After the metallized film capacitor (100) of the present invention is laminated and wound so that the margins of the metallized film (1) and the metallized film (50) are alternately opposite to each other, 110) It has been processed. In FIG. 2, two metallized films are paired and wound twice. However, a structure in which a plurality of metallized films are laminated and wound may be used, or even more may be wound. Good.

  Between the laminated metallized film (1) and metallized film (50), a margin (4) and a shift width (106) are provided in the metallized film for the purpose of ensuring an insulation distance (102). As described above, the margin (4) is a distance from the margin side end surface to the metal thin film (3). In the two metallized films laminated so that the margins (4) are staggered, the shift width (106) is the margin side end face of one metallized film and the electrode side end face of the other metallized film when laminated. Is the distance.

  For the margin (4), it is preferable to determine the insulation distance (102) from the viewpoint of the electrical characteristics of the capacitor, and to set the width to 0.1 to 5 mm. On the other hand, when the margin side end of the metallized film (1) is outside the electrode side end of the metallized film (50), the margin side end is a hindrance to intrusion of the metallicon (110). Become. As a result, the junction area (for example, the portion denoted by reference numeral 111 in FIG. 2) between the metallicon (110) and the metal thin film (3) is reduced, causing a problem that the current resistance of the capacitor is lowered.

  Therefore, it is preferable to provide the shift width (106) so that the margin side end of the metallized film (1) is inside the electrode side end of the metallized film (50). Here, the inside means the direction in which the margin side end of the metallized film (1) and the margin side end of the metallized film (50) approach. Furthermore, if the shift width (106) is too large, the strength of the metallized film capacitor will be weakened and cause deformation, so 0.1 to 2 mm is preferable.

  Next, the corrugated shape of the metallized film will be described with reference to the drawings. FIG. 3 is an enlarged view showing a wave shape at the side end when the metallized films (1) and (50) are in a laminated state. The front of the drawing is a metallized film (1), and the rear is a metallized film (50). Both have an upper surface in front of the drawing.

  A part of the metal thin film (3) of the metallized film (1) and the boundary (16) between the margin (4) are visible. Here, the pitch length is defined. The pitch length is the distance from the top of one peak of the corrugated shape at the side edge to the top of the next peak.

  In FIG. 3, the pitch length (31) in the electrode side edge part of a metallized film (50) is shown. When the pitch length (31) at the electrode side end portion is too long, it becomes impossible to efficiently secure a gap between the films as in the conventional method in which no corrugation is provided. Therefore, the pitch length (31) Is preferably 0.1 mm or more and 10 mm or less, more preferably 1 mm or more and 5 mm or less.

  FIG. 3 shows the amplitude (20) of the corrugated shape at the electrode side end as described in FIG. If the amplitude (20) is too large, problems such as a decrease in mechanical strength of the capacitor and deformation occur, and if it is too small, it becomes impossible to efficiently secure a gap between films as in the conventional method. Therefore, the amplitude (20) is preferably 0.05 mm or more and 5 mm or less, more preferably 0.1 mm or more and 2 mm or less.

  In this specification, the wave shape is mainly described as a sine curve, but the present invention is not limited to this, and a triangular wave shape, a trapezoidal shape, a square shape, or a combination thereof is not limited to the scope of the present invention. Is included. Further, a combination of periodic curves other than a sine curve may be used. For example, the shape may be such that the amplitude and pitch length change at a constant period.

  Subsequently, the structure of the metallized film capacitor according to the present embodiment will be described in detail below. As mentioned earlier, the dielectric film with a width of 15 mm or less does not have enough precision to form a heavy edge width. Therefore, a thin metal film is formed on the entire surface of the film to prevent high film resistance, and conversely, a thin metal film is formed. As a result, a heavy edge is not formed at all. Accordingly, there is a problem that the voltage resistance of the capacitor cannot be improved in the portion where the high film resistance is not formed, and the current resistance of the capacitor is lowered in the portion where the heavy edge is not formed.

  As means for avoiding these problems, the inventors laminated a plurality of metallized films having a corrugated shape at least on the electrode side end and wound them to form a metallized film capacitor. It has been found that since the bonding strength is increased, the withstand voltage can be improved by increasing the film resistance without degrading the current resistance without forming a heavy edge.

  As shown in FIG. 2, the electrode-side end of the metallized film has a corrugated shape, so that the film collapses at the corrugated portion of the electrode-side end (for example, a portion indicated by reference numeral 115 in FIG. 2). Therefore, a gap is secured between the films, and the electrode side end portion is easily joined to the metallicon, increasing the contact area and strengthening the joint strength, so that the electric resistance at the metallicon joint portion is reduced and the conventional corrugated shape is not provided. The current resistance is improved as compared with the metallized film. That is, even if the film resistance is increased in order to improve the withstand voltage characteristics, it is not necessary to form a heavy edge to ensure current resistance.

  Here, it is important that the corrugated shape is provided on the electrode side end of the metallized film. Even if a corrugated shape is provided at the margin side end of the metallized film, desired current characteristics cannot be obtained. The reason for this is not clear, but the inventors presume as follows. That is, when the corrugated shape is provided only at the margin side end of the metallized film, the gap between the films is ensured by the falling of the film as in the case where the electrode side end is provided with the corrugated shape. Since the side edge does not cause the film to collapse, the contact area between the electrode side edge and the metallicon does not increase. Accordingly, it is presumed that the current resistance is not improved because the bonding strength between the electrode-side end portion and the metallicon does not increase and the electric resistance at the metallicon bonding portion does not decrease.

  According to the examination, the film resistance of the metal thin film formed on the upper surface of the dielectric film with a width of 15 mm or less and the current resistance of the capacitor were evaluated. It has been found that a high film resistance of 3Ω / □ or more and less than 10Ω / □ has a current resistance equivalent to that of a metallized film having a low film resistance of less than 3Ω / □.

  Further, as a result of investigating the relationship between the film resistance and the voltage resistance of the capacitor, if the film resistance is less than 3Ω / □, the self-healing does not function sufficiently, and it is difficult to improve the voltage resistance. When the film resistance exceeds 10 Ω / □, the series equivalent resistance at the joint between the metallicon and the metal thin film (3) increases, and the dielectric loss tangent (tan δ) of the capacitor characteristics and the current resistance decrease. Therefore, in order to improve the voltage resistance without degrading the current resistance, the metal thin film formed on the upper surface of the dielectric film has a corrugated shape on at least one side end of the dielectric film. The membrane resistance is preferably 3Ω / □ or more and less than 10Ω / □, more preferably 5Ω / □ or more and 8Ω / □ or less.

  “□” indicates that the sample is square. When the four-terminal method is used when measuring the resistance value, if the sample is square, the measured resistance value is constant regardless of the size of the sample. Therefore, for example, 10Ω / □ represents that the resistance value measured for a square sample is 10Ω. Further, in this specification, a film resistance of less than 3Ω / □ is a low film resistance, and a film resistance of 3Ω / □ or more is a high film resistance.

Next, examples showing the effects of current resistance and voltage resistance of a metallized film capacitor using the metallized film of the present invention will be described. The present invention is not limited to these examples.
The characteristics and numerical values of the film capacitors obtained in each Example and Comparative Example are defined below including the measurement method and evaluation method.

[Method for evaluating physical properties]
(1) Film thickness
According to JIS C 2151, the thickness of the 10-layer film was measured with an electronic microphone meter, and the average value obtained by averaging 5 points was divided by the number of metallized films (10) to obtain the metallized film thickness.

(2) Resistance value of metal thin film A metallized film sample having a width of 10 mm and a length of 250 mm was prepared. Measure the metal film resistance between 100 mm electrodes by the 4-terminal method, and multiply the measured value by (measurement width (= 10 mm) / interelectrode distance (= 100 mm)) to obtain a film per 10 mm width and 10 mm interelectrode distance. Resistance was calculated. The average value measured at five locations was taken as the resistance value. The unit is displayed as Ω / □.

(3) Pitch length and amplitude of corrugated shape at side end portion Magnified by a factor of 50 with a Nikon Corporation projector, and the length of each part is measured with a Nikon digital counter CM-6S. The average value measured at five locations was defined as the pitch length and amplitude.

(4) Margin and shift width Magnify 50 times with Nikon Corporation projector and measure the length of each part with Nikon Digital Counter CM-6S. The average value measured at five locations was defined as the margin and the offset width.

(5) Capacitor capacitance and tan δ
An LCR METER AG-4311 manufactured by Ando Electric Co., Ltd. was used to measure the capacitance of the metallized film capacitor and tan δ at a frequency of 1 kHz. tan δ is an index indicating the electrical loss of the capacitor. A smaller value indicates a capacitor with less loss. The unit is percent (%).

(6) Current resistance A peak current of 1500 A was applied to the metallized film capacitor to be evaluated at an application time of 5 μsec, and the application was repeated until it reached a broken state. The number of times of application until each evaluation sample was in a destructive state was investigated. It was evaluated by measuring tan δ at a frequency of 1 kHz of the metallized film capacitor after 10 times of current application. If the tan δ value after application was 10% or more, it was judged that the metallized film capacitor was in a broken state. Those with 50 times or more of application times leading to destruction were regarded as good current resistance.

(7) Voltage resistance The test was carried out using a direct current withstand voltage tester (DC4 kv) manufactured by Kasuga Electric. The step-up rate was 100 v / sec. The test was performed 6 times for each evaluation element, and the highest voltage among the 6 times was defined as the breakdown voltage. Those having a breakdown voltage of 1500 V or higher were considered to have good voltage resistance.

(8) Comprehensive evaluation Comprehensive evaluation of the capacitor was performed according to the following criteria.
○: The number of times of application leading to breakdown in the current resistance evaluation is 50 times or more, and the breakdown voltage is 1500 v or more in the voltage resistance evaluation.
X: The number of times of application leading to breakdown in the current resistance evaluation is less than 50 times, or the breakdown voltage is less than 1500 v in the voltage resistance evaluation.

Example 1
The dielectric film was a biaxially stretched polypropylene having a thickness of 4.0 μm. First, a mask for forming a margin was formed in the longitudinal direction of the dielectric film in a vacuum deposition machine, and aluminum was deposited as a metal material. The mask was formed by applying an oil component.

  Next, the deposited film was slit so that the margin was 1.0 mm and the film width was 14 mm. Here, the slitter apparatus used was provided with a curved cutter only at the electrode side end portion so that the film cut surface could form a corrugated shape. The obtained metallized film had a continuous sinusoidal shape with a constant pitch length and amplitude only at the electrode side end, and the pitch length was 2.0 mm and the amplitude was 0.3 mm. Here, when the film resistance value of the obtained metallized film was measured, it was 5.0Ω / □. Next, the obtained two metallized films are laminated so that the margins are opposite to each other, wound with a shift width of 0.8 mm, metallized, and electrode terminal soldered. Produced.

  Twenty metallized film capacitors were produced and the capacitance and tan δ were measured. The average capacitance of the 20 capacitors was 1.04 μF, and the average tan δ was 0.014%. When the current resistance of these capacitors was evaluated, the number of breakdowns was 270 times, which was 50 times or more of the evaluation standard. Moreover, when the withstand voltage evaluation was performed, the breakdown voltage was 1721 v, which was 1500 v or higher of the evaluation standard. Accordingly, both current resistance and voltage resistance were good results. The results are shown in Table 1.

(Example 2)
A metallized film capacitor similar to Example 1 was obtained except that the film resistance value of the metallized film was 9Ω / □. The obtained 20 metallized film capacitors had an average capacity of 1.04 μF and an average tan δ of 0.021%. When these capacitors were evaluated for current resistance, the number of breakdowns was 55, which was 50 or more of the evaluation criteria. Moreover, when the withstand voltage evaluation was performed, the breakdown voltage was 1900 v, which was 1500 v or more of the evaluation standard. Therefore, the current resistance and voltage resistance were good results. The results are shown in Table 1.

(Example 3)
A metallized film capacitor similar to Example 1 was obtained except that the film resistance value of the metallized film was 3Ω / □. The obtained 20 metallized film capacitors had an average capacity of 1.05 μF and an average tan δ of 0.012%. When the current resistance of these capacitors was evaluated, the number of breakdowns was 280 times, which was 50 times or more of the evaluation standard. Moreover, when the withstand voltage evaluation was performed, the breakdown voltage was 1550 v, which was 1500 v or more of the evaluation standard. Therefore, the current resistance and voltage resistance were good results. The results are shown in Table 1.

(Comparative Example 1)
A slitter device equipped with a linear cutter was used in the film cutting step, and a metallized film capacitor similar to Example 1 in which both side ends of the metallized film were straight was obtained. Here, when the film resistance value of the obtained metallized film was measured, it was 5.0Ω / □. The obtained 20 metallized film capacitors had an average capacity of 1.05 μF and an average tan δ of 0.015%. When the current resistance of these capacitors was evaluated, the number of breakdowns was 30 times, which was less than the evaluation standard of 50 times. Moreover, when the withstand voltage evaluation was performed, the breakdown voltage was 1745v, which was 1500V or higher of the evaluation standard. Therefore, the voltage resistance is good, but the current resistance is poor. The results are shown in Table 1.

(Comparative Example 2)
A metallized film capacitor similar to that of Example 1 was obtained except that the film resistance value of the metallized film was 10Ω / □. The obtained 20 metallized film capacitors had an average capacity of 1.04 μF and an average tan δ of 0.022%. When the current resistance of these capacitors was evaluated, the number of breakdowns was 20 times, which was less than the evaluation standard of 50 times. Moreover, when the withstand voltage evaluation was performed, the breakdown voltage was 1995 v, which was 1500 v or higher of the evaluation standard. Therefore, the voltage resistance is good, but the current resistance is poor. The results are shown in Table 1.

(Comparative Example 3)
A metallized film capacitor similar to Comparative Example 1 was obtained except that the film resistance value of the metallized film was 2Ω / □. The obtained 20 metallized film capacitors had an average capacity of 1.05 μF and an average tan δ of 0.012%. When the current resistance of these capacitors was evaluated, the number of breakdowns was 250, which was 50 or more of the evaluation standard. Moreover, when the withstand voltage evaluation was performed, the breakdown voltage was 1127v, which was less than 1500V of the evaluation standard. Accordingly, the current resistance was good, but the voltage resistance was poor. The results are shown in Table 1.

  The difference between Example 1 and Comparative Example 1 is whether or not the electrode side end is cut into a corrugated shape. In the evaluation of current resistance, it can be seen that the number of times of application in Example 1 until destruction is significantly greater than that in Comparative Example 1. Moreover, in withstand voltage evaluation, it turns out that there is no big difference in Example 1 and Comparative Example 1. Therefore, it can be seen that by cutting the electrode side end into a corrugated shape, the current resistance is greatly improved without affecting the voltage resistance.

  Moreover, the difference between Example 2 and Comparative Example 2 is a difference in membrane resistance of the metallized film. In the evaluation of current resistance, it can be seen that Example 2 has a larger number of times of application than that of Comparative Example 2 until breakdown. Moreover, in withstand voltage evaluation, it turns out that the breakdown voltage of Example 2 is lower than that of Comparative Example 2. Therefore, it can be seen that the breakdown voltage increases because the self-healing easily functions by increasing the film resistance. However, in the evaluation of current resistance, the number of times of application in Example 2 until destruction was higher than that in Comparative Example 2, and even if the electrode side end was cut into a corrugated shape, the current resistance was high with a high film resistance of 10Ω / □ or more. It is understood that it is better to form with a film resistance of less than 10 Ω / □ because the property does not improve.

  The difference between Example 3 and Comparative Example 3 is the difference between whether or not the electrode side end is cut into a corrugated shape and the film resistance of the metallized film. In the current resistance evaluation, Example 3 is a good result because the number of times of application until breakdown is larger than that of Comparative Example 3. Moreover, in withstand voltage evaluation, it turns out that the breakdown voltage of Example 3 is higher than that of Comparative Example 3. Therefore, even if the electrode side end is not cut into a corrugated shape, the current resistance is good if the film resistance is reduced to less than 3Ω / □, but in order to improve the voltage resistance, the film resistance should be reduced. It must be higher than 3Ω / □.

It is the schematic diagram and sectional drawing which showed the structure of the metallized film regarding this invention. It is sectional drawing which showed the structure of the metallized film capacitor regarding this invention. It is an enlarged view which shows the lamination | stacking state of the side edge part of the metallized films (1) and (50) regarding this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Metallized film 2 Dielectric film 3 Metal thin film 4 Margin 50 Metallized film 106 Shift width 110 Metallicon

Claims (2)

  At least one metal thin film is formed on one side of the dielectric film, the film width is 15 mm or less, the film has an electrode side end portion and a margin side end portion, and at least the electrode side end portion has a wave shape. A metallized film having a metal thin film resistance in the range of 3Ω / □ or more and less than 10Ω / □.   A metallized film capacitor comprising the metallized film according to claim 1 as a constituent material.

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