JP2007201313A - Metal deposited film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metal deposited film having a security function, decreasing an influence on an adjacent split part, and corresponding to an arbitrary film resistance. <P>SOLUTION: The metal deposited film with a metal deposited on at least one side of a polymeric film includes at least one line of nondeposited margin continued in a longitudinal direction, and a plurality of nondeposited margin in a widthwise direction meeting the following (1) to (3). Each nondeposited margin respectively has at least one discontinuous part (1). Each nondeposited margin does not intersect (2). There is at least one narrow part between adjacent nondeposited margins in a width direction (3). <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a processed film for a capacitor. More specifically, a metal vapor deposition film for continuously depositing a conductive metal on a film substrate is a film wound on a reel after being shredded to a predetermined width and used to form a capacitor element. About.

Conventionally, when depositing conductive metals, that is, metals such as aluminum, gold, titanium, iron, silver, copper, tin, indium, and zinc, on the film substrate, non-deposition locations called margins and patterns are formed. By doing so, a method of dividing the metal vapor deposition portion in the longitudinal direction and the width direction is known. Thus, for example, Patent Documents 1 and 2 have been proposed.
French Patent No. 2651602 Japanese Patent Laid-Open No. 2001-35743

  However, although the security function is improved if the divided parts are subdivided, heat is likely to be generated, and the current path is shared between the adjacent divided parts, so that the normal part and the capacity are reduced by affecting each other when the safety function is activated. There was a problem. In addition, although a pattern in which the pitch is narrowed without being subdivided and the film resistance is increased to improve the self-recovery property has been proposed, there is a problem that the film resistance is limited.

  Therefore, an object of the present invention is to provide a metal vapor deposition film that solves the above-described problems of the prior art, has a sufficient security function, reduces the influence on adjacent divided portions, and corresponds to an arbitrary film resistance. It depends.

The metal vapor deposition film of the present invention has the following configuration in order to solve the above problems. That is, a metal vapor deposition film in which a metal is vapor-deposited on at least one surface of a film substrate, and at least one non-deposition margin continuous in the longitudinal direction on the metal vapor deposition surface, and the following (1) to (3) The metal vapor deposition film containing the non-deposition margin of the multiple width direction satisfy | filling.
(1) Each non-deposition margin has at least one discontinuous portion.
(2) Each non-deposition margin does not intersect.
(3) There is at least one narrow portion in the width direction between adjacent non-deposition margins.
It is.

  According to the metal vapor deposition film of the present invention, it is possible to provide a metal vapor deposition film having a small direct current withstand voltage with little decrease in capacity when a capacitor element is formed.

  Hereinafter, preferred embodiments of the present invention will be described.

  The film substrate according to the present invention is not particularly limited as long as a conductive metal can be deposited, but polyethylene, unstretched or stretched polypropylene, polymethylpentene, cycloolefin polymer, norbornene polymer, polyethylene terephthalate, polyethylene naphthalene. Organic polymer films made of phthalates, polyamides, polyamideimides, polyphenylene sulfides, polyetherimides, polyimides, liquid crystal polymers, or a mixture of two or more of these and polymer alloys are preferred, and withstand voltage characteristics when capacitors are formed From the viewpoint of excellent dielectric loss tangent characteristics and insulation resistance characteristics, a non-stretched or stretched polypropylene film is particularly preferably used. In addition, even when various coatings, sputtering, CVD, and vapor deposition films are provided on the vapor deposition surface side of these film bases in order to improve various properties such as increasing the dielectric constant, as long as the object of the present invention is achieved, The kind of base material is not specifically limited.

  The polypropylene film preferably used as the film substrate of the present invention may be a film made of a copolymer of propylene and other α-olefin (eg, ethylene, butene, etc.) in addition to a film made of polypropylene homopolymer, A film made of a blend of polypropylene and another α-olefin polymer (for example, polyethylene, polybutene, etc.) may also be used.

  Moreover, the additive contained in the film base material according to the present invention is not particularly limited, and may be appropriately selected and added as long as the target characteristics of the present invention are not affected.

  The film substrate surface may be subjected to surface treatment such as corona discharge treatment, flame treatment, plasma treatment, or lamination of an adhesive coating layer, a resin coating layer, a resin layer by melt extrusion, It is preferable to perform the corona discharge treatment from the viewpoint that it is easy to make the wet tension on the vapor deposition surface uniform.

  The conductive metal vapor deposition film according to the present invention is not particularly limited as long as the aluminum content is 80% by weight or more, or the zinc content is 80% by weight or more, and aluminum, gold, titanium, iron, silver, Obtained by depositing a conductive metal such as copper, tin, indium, zinc, or a combination thereof, or an alloy with another conductive metal, to obtain a uniform and stable deposited film of conductive metal From the viewpoint, it is preferable to use zinc alone, a laminate of zinc and aluminum, an alloy, an alloy of zinc and aluminum, or aluminum alone. In addition, the resistance value of the metal film (thickness of the metal film) is not particularly limited, and the metal film on the side opposite to the side where the continuous margin is formed is thick, so-called heavy edge structure, or the film resistance gradually decreases in the width direction. A structure in which the film thickness is gradually increased or gradually increased (thickness gradually decreases) may be used.

  In the metal vapor deposition film of the present invention, a metal vapor deposition surface is formed on at least one surface of the film substrate, and a non-deposition margin continuous in the longitudinal direction is formed on the metal vapor deposition surface side. Further, a non-deposition margin having a regular geometric pattern is formed. The non-deposition margin in the width direction has at least one discontinuous portion, and does not intersect the adjacent non-deposition margin in the width direction and at least one position in the width direction between the adjacent non-deposition margins. It is essential to have a narrow part. Here, the longitudinal direction refers to the winding direction of the film substrate, and the width direction refers to the direction orthogonal to the longitudinal direction.

  If no discontinuous part is formed in the non-deposition margin in the width direction, if the deposited film cracks between adjacent margins in the longitudinal direction, the deposition surface on the electrode side functions as a capacitor, but on the opposite electrode side Since the electrode surface on the side of a certain margin in the longitudinal direction does not function as a capacitor, the rate of capacity reduction increases when a crack occurs on the side closer to the electrode side. Even in such a case, by forming the discontinuous portion in the non-deposition margin in the width direction, current supply from other electrodes can be obtained through the discontinuous portion, so that a decrease in capacity reduction can be suppressed. In other words, the capacity can be reduced only in a portion where the withstand voltage is low, and other vapor deposition regions can be secured.

  Further, when non-deposition margins adjacent in the width direction cross each other, only current is supplied from the discontinuous portion, which causes problems such as heat generation. However, non-deposition margins adjacent in the width direction do not intersect with each other to provide a narrow portion, which suppresses current supply from the electrodes and prevents heat generation, thereby reducing deterioration of the film base and deposited metal. In addition, only the region where the withstand voltage is lowered due to the fuse effect can be limitedly removed as the capacity reduction.

  The width of the narrow portion and the width of the discontinuous portion of the non-deposition margin in the width direction may be appropriately selected in view of the film resistance of the deposited film, and may be 0.2 mm or more and less than Pmm, but more appropriate In order to suppress the decrease in capacity, it is preferably 0.3 mm or more and 4 mm or less, and more preferably 0.4 mm or more and 2 mm or less. Here, P (mm): means an interval between intersections of the non-deposition margin in the longitudinal direction and the non-deposition margin in the width direction (hereinafter referred to as a pattern pitch).

  Further, the width of the discontinuous portion may not be the same in the width direction. For example, in consideration of the case where the capacitance is reduced on the electrode side, the width of the discontinuous portion on the counter electrode side is made larger or smaller than the electrode side. May be.

  The narrow portion may be at least one place in the width direction, but is preferably 2 or more and 5 or less, and more preferably 2 or more and 3 or less. If there are six or more locations, heat generation by the narrow portion may increase, leading to deterioration, and a single device has a small capacity reduction reduction effect.

  Further, when there are a plurality of narrowed portions in the width direction, the interval from the narrowed portion to the narrowed portion may not be constant, for example, it may be increased or decreased sequentially from the electrode side to the counter electrode side. I do not care.

  The distance between the non-evaporation margin in the width direction and the electrode end face is not particularly limited as long as a predetermined characteristic is obtained when the capacitor is formed. For example, when the pattern pitch is relatively small, there is a concern that the contact state between the electrode end face and the metallicon (sprayed metal) may decrease and increase the dielectric loss tangent, and importance is placed on affecting the required capacitor characteristics. In this case, a certain distance from the electrode end face may be formed. In addition, when it is not particularly important to consider the dielectric loss tangent, a width direction non-deposition margin is formed to the electrode end face without taking the distance. It doesn't matter.

  The width of the non-deposition margin continuous in the longitudinal direction is preferably 0.3 mm or more, and more preferably 0.5 mm or more from the viewpoint of insulation.

  The width of the non-deposition margin in the width direction is preferably small because it leads to a decrease in capacity. However, in order to ensure insulation, the width is 0.05 mm or more, more preferably 0.1 mm or more.

  The geometric pattern of the non-deposition margin in the width direction is not particularly limited as long as a narrow portion is formed in the width direction. When the adjacent non-deposition margins in the width direction are curves, the narrow portion may be formed by any one of the vertices other than the vertices of the curves or the vertices of the curves. When the adjacent margins in the width direction are a straight line and a curve, the narrow portion may be formed by a vertex of the straight line and the curve. In other words, as long as at least one narrow portion is formed in the width direction, the non-deposition margin in the width direction may be any pattern. A typical pattern example in which the non-deposition margin in the width direction is formed by curves is shown in FIGS. 1 to 3, and a typical pattern formed by straight lines and curves is shown in FIG.

  As a method used for forming the non-deposition zone of the non-deposition margin in the longitudinal direction according to the present invention, a method using oil is exemplified. Examples of the oil generally include silicone oil, fluorine oil, liquid paraffin, and the like. In addition, there are other methods using tape and laser as other methods, but any method may be used as long as the non-deposition portion is continuously formed in the longitudinal direction with a predetermined width, and the method is not particularly limited.

  Examples of a method for forming a non-evaporation margin in the width direction according to the present invention include a method using oil, a method using a screen, and a method using a laser. From the viewpoint of productivity and dimensional accuracy after forming a margin, an appropriate amount of oil is used in advance. The most preferable method is to adhere and transfer the non-evaporated section zone to the convex portion of the printing roll having a convex shape.

  The oil adhesion surface of the printing roll here is not particularly limited as long as the dimensional accuracy after printing is not impaired, whether it is metal, organic materials such as resin or rubber, and porous materials of various materials. However, from the viewpoint of productivity and dimensional accuracy, it is desirable to use a resin or rubber material and a porous material of resin or rubber.

  The metal vapor deposition film according to the present invention has a film base / deposition or margin formation by vapor deposition and printing / metal vapor deposition film / or lamination of metal vapor deposition film, and / or metal film mixing (alloy). Formation of oil film, polymer film and oxide film for film protection, and polymer film and oxide film may be formed between the film substrate and metal vapor deposition film. Radiation treatment may be performed to strengthen the work.

  The radiation here refers to ultraviolet rays, infrared rays, electron beams, ion particles, α rays, β rays, γ rays, excited atoms, excited molecules, glow discharge, plasma, and the like. In particular, the radiation is preferably at least one selected from the group consisting of electron beams, inert atom ions, oxygen ions, or excited oxygen (molecules or atoms). Inert atomic ions, oxygen ions, excited oxygen (molecules or atoms) are present in a plasma using an inert gas, and / or a gas composed of molecules containing oxygen atoms, or a mixed gas with other gases. The organic material can also be polymerized and / or crosslinked by exposing the organic material layer to plasma. Usually, ions and excitation gas particles in the plasma cannot penetrate deep into the organic compound layer, but in the present invention, the organic layer is thin and can be polymerized and / or crosslinked. A gas such as oxygen gas or argon gas may be used for the plasma.

  In order for the metal vapor-deposited film obtained by the present invention to be suitably used for capacitor applications, the film resistance value is preferably 1.5 to 100Ω / □. Moreover, the vapor deposition film used for this invention does not ask | require the presence or absence of a heavy edge. The heavy edge refers to a portion where the metal film thickness is thicker than the others in the vicinity of the electrode forming portion on the end surface in the width direction of the metal vapor-deposited film after chopping. As a method for forming a heavy edge, there is a method in which a slit plate is provided above the vapor deposition source and a slit in a portion where the heavy edge is formed is elongated in the longitudinal direction, and a method in which a large number of vapor deposition stages are provided and a predetermined portion is thickened. The method may be used.

  The metal vapor deposition film used by this invention is cut | disconnected by the predetermined | prescribed width | variety after completion | finish of metal vapor deposition and a post-processing process, and was wound up in the reel shape. The shredding method is not particularly limited as long as it can be arranged in a reel shape, but it is possible to use a slitter that continuously cuts the film after metal deposition in the longitudinal direction to a predetermined width from the uniformity of the film width and the end face shape. desirable. In addition, the film width does not need to be a straight line when viewed from the top surface (through the metal deposition surface side or the opposite direction), and the cut end surface shape in the longitudinal axis direction of the film is continuous at a constant cycle. A simple waveform may be used.

  The metal vapor-deposited film obtained by the present invention may be subjected to a heat treatment as long as the film dimensions and various properties are not significantly impaired after being wound up in a reel shape. Either a hot air oven or a vacuum oven can be used as a heat treatment method. May be used.

  Next, the measurement method and evaluation method used in the present invention will be described.

(1) Step-up DCBDV
a. Sample creation method:
A metal vapor-deposited film wound in a reel shape after chopping is wound on a PBT Φ9 cylindrical core by a winding method, and after heat treatment, electrodes are formed on both side end electrode portions by metal spraying (hereinafter referred to as metallicon), then lead The wires were joined by soldering and voltage treatment was performed to form a capacitor element with a capacitance of 10 μF.

b. Voltage application method:
The lead wire of the element was connected to a 2 KV power source (manufactured by HEIDEN Laboratory: model HD2K2P-PS), and step-up DCBDV was performed under the conditions of a starting voltage of 800 V, a step-up voltage of 100 V, and a step holding time of 10 minutes. The capacity was measured with an LCR meter at the end of each step.

c. Capacity measurement method:
Using TYPE AG-4411 LCRMETER manufactured by Ando Electric Co., Ltd., 1 VAC × 1 kHz was applied and measured.

(2) High temperature DCVT
The device was previously placed in an oven at 100 ° C. for 2 hours or more, and then 700 VDC was applied, and the capacity after 24 hours and 48 hours passed was measured at room temperature.

  The device was formed in the same manner as the device formation for step-up DCBDV except that the device capacitance was 35 μF. Further, the voltage applying device and the capacity measuring device are the same as the step-up DCBDV, and the heating oven is a PR-4S manufactured by Tabai ESPEC.

(3) The width of the narrow part of the non-deposition margin and the width of the discontinuous part A single deposition film for measurement is placed on the backlight projection plate, and the width of the narrow part of the non-deposition margin and the width of the discontinuous part are set. Visual measurement was performed with a SCALE LUPE (× 10) manufactured by PEAK.

  Hereinafter, the details of the present invention will be further described using examples.

(Examples 1-3, Comparative Examples 1-3)
A biaxially stretched polypropylene film (made by Toray Industries, Inc .: Trefan (registered trademark) 2172) having a width of 640 mm and a thickness of 3.2 μm was used as the film substrate. The vacuum chamber upper chamber is depressurized to 5 × 10 ⁻³ torr, the fluorine-based oil previously supplied in the oil evaporator is heated to 90 ° C. or more, and the film is passed through the slit provided on the oil evaporator. A non-deposition margin in the longitudinal direction is formed on the substrate. Next, the vapor-form oil is supplied to the transfer roll and attached thereto, and the oil formed on the surface of the transfer roll is shown in FIGS. 1 and 2, respectively (1) Development A, (2) Development B, and The patterns (3) half TD, (4) T, and (5) cross shown are transferred to a printing roll engraved on the same roll. Furthermore, the oil layer formed on the surface of the engraving pattern of the printing roll was transferred to a film substrate that continuously moved from the unwinding side to the winding side to form a non-deposition margin in the width direction. Next, at the lower part of the cooling roll located in the lower chamber of the vacuum deposition apparatus evacuated to 2 × 10 ⁻⁴ torr or less, the film resistance of aluminum becomes 2-3Ω / □ at the heavy part and 8-11Ω / □ at the active part. As described above, vapor deposition was performed through the slits to prepare an aluminum vapor deposition film on which a printing pattern (margin pattern) was formed. The film speed was continuously performed at 350 m / min.

Next, the aluminum vapor-deposited film was continuously shredded to a width of 50 mm with a shredding machine called a slitter, and a reel-like vapor-deposited product having a width of 3000 m or more with the same width was produced. A combination of a heavy edge printing pattern vapor deposition reel and a heavy edge general vapor deposition reel whose longitudinal margin positions are symmetric is wound up by applying a tension of 200 to 300 gf with an element winding machine using a PBT core, and elements having a capacity of 10 μF and 35 μF are wound. Created. Capacitors using aluminum vapor deposition films on which each margin pattern is formed are as follows. Example 1: (1) Development A pattern Pattern pitch: 4 mm (longitudinal direction)
Width of narrow part of width direction non-deposition margin: 1.8mm
Width of discontinuous part in width direction non-deposition margin: 2.0 mm
The distance between the non-deposition margin in the width direction and the electrode end face: 10 mm
Example 2: (2) Development B pattern Pattern pitch: 4 mm (longitudinal direction)
Width of narrow part of width direction non-deposition margin: 1.8mm
Width of discontinuous part in width direction non-deposition margin: 2.0 mm
The distance between the non-deposition margin in the width direction and the electrode end face: 10 mm
Comparative Example 1: (3) Half TD pattern Pattern pitch: 4 mm (longitudinal direction)
The distance between the non-deposition margin in the width direction and the electrode end face: 10 mm
Comparative Example 2: (4) T pattern Pattern pitch: 17 mm (longitudinal direction)
Fuse width: 0.5mm
Comparative Example 3: (5) Cross pattern Pattern pitch: 15.3 mm (longitudinal direction)
Fuse width: 0.5mm
It was.

  Subsequently, in order to prepare electrodes for each capacitor element, metallicons and lead wires were attached, and the initial capacity was measured with an LCR meter manufactured by Ando Electric.

  Step-up DCBDV was performed using a 10 μF capacitor element, and the results shown in FIG. 6 were obtained. High temperature DCVT was performed using a 35 μF capacitor element, and the results shown in FIG. 7 were obtained.

  In step-up DCBDV when the capacity decreased by 10%, the voltages of Examples 1 and 2 were high, and it was confirmed that there was no capacity decrease after 48 hours even at high temperature VT.

(Examples 3 and 4, Comparative Example 4)
A biaxially stretched polypropylene film (made by Toray Industries, Inc .: Trefan (registered trademark) 2172) having a width of 640 mm and a thickness of 3.2 μm was used as the film substrate. The vacuum chamber upper chamber is depressurized to 5 × 10 ⁻³ torr, and the fluorine-based oil supplied in advance in the oil evaporator is heated to 90 ° C. or higher, and high through a slit provided in the upper part of the oil evaporator. A non-deposition margin in the longitudinal direction is formed in the molecular film. Next, the vapor-form oil is supplied to the transfer roll and attached thereto, and the oil formed on the surface of the transfer roll is shown in FIGS. 1 and 2, respectively (1) Development A, (2) Development B, and The patterns (3) half TD, (4) T, and (5) cross shown are transferred to a printing roll engraved on the same roll. Furthermore, the oil layer formed on the surface of the engraving pattern of the printing roll was transferred to a film substrate that continuously moved from the unwinding side to the winding side to form a non-deposition margin in the width direction. Next, at the lower part of the cooling roll located in the lower chamber of the vacuum deposition apparatus evacuated to 2 × 10 ⁻⁴ torr or less, the film resistance of aluminum becomes 3 to 4Ω / □ in the heavy part and 12 to 20Ω / □ in the active part. As described above, vapor deposition was performed through the slits to prepare an aluminum vapor deposition film on which a printing pattern (margin pattern) was formed. The film speed was continuously performed at 350 m / min.

Next, the aluminum vapor-deposited film was continuously shredded to a width of 50 mm with a shredding machine called a slitter, and a reel-like vapor-deposited product having a width of 3000 m or more with the same width was produced. A combination of a heavy edge printing pattern vapor deposition reel and a heavy edge general vapor deposition reel whose longitudinal margin positions are symmetric is wound up by applying a tension of 200 to 300 gf with an element winding machine using a PBT core, and elements having a capacity of 10 μF and 35 μF are wound. Created. Capacitors using aluminum vapor deposition films on which each margin pattern was formed were respectively Example 3: (1) Development A pattern Pattern pitch: 4 mm (longitudinal direction)
Width of narrow part of width direction non-deposition margin: 1.8mm
Width of discontinuous part in width direction non-deposition margin: 2.0 mm
The distance between the non-deposition margin in the width direction and the electrode end face: 10 mm
Example 4: (2) Development B pattern Pattern pitch 4 mm (longitudinal direction)
Width of narrow part of width direction non-deposition margin: 1.8mm
Width of discontinuous part in width direction non-deposition margin: 2.0 mm
The distance between the non-deposition margin in the width direction and the electrode end face: 10 mm
Comparative Example 4: (3) Half TD pattern Pattern pitch: 4 mm (longitudinal direction)
The distance between the non-deposition margin in the width direction and the electrode end face: 10 mm
It was.

  Next, in order to prepare electrodes for each capacitor element, metallicons and lead wires were attached, and then the initial capacity was measured with an LCR meter manufactured by Ando Electric.

  Step-up DCBDV was performed using a 10 μF capacitor element, and the results shown in FIG. 6 were obtained. Moreover, high temperature DCVT was implemented using the 35 micro F capacitor | condenser element, and the result shown in FIG. 7 was obtained.

  In step-up DCBDV when the capacity decreased by 10%, the voltages of Examples 3 and 4 were high, and it was confirmed that there was no capacity decrease after 48 hours even at high temperature VT.

Non-deposition margin pattern according to the present invention Non-deposition margin pattern according to the present invention Non-deposition margin pattern according to the present invention Non-deposition margin pattern according to the present invention Conventional non-deposition margin pattern Step-up DCBDV measurement results Measurement result of high temperature DCVT The figure explaining the distance between the width of the narrow part, the width of the discontinuous part, the pattern pitch, the non-deposition margin in the width direction, and the electrode end face

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Non-deposition margin of longitudinal direction 2 Non-deposition margin of width direction 3 Discontinuous part 4 Narrow part 5 Metal deposition surface 6 Narrow part width 7 Discontinuous part width 8 Pattern pitch 9 Fuse 10 Fuse width 11 Non-evaporation of width direction Distance between margin and electrode end face

Claims (5)

A metal vapor deposition film in which a metal is vapor-deposited on at least one surface of a film substrate, and the metal vapor deposition surface satisfies at least one non-deposition margin that is continuous in the longitudinal direction and the following (1) to (3): Metal vapor deposition film including multiple non-deposition margins in the width direction.
(1) Each non-deposition margin has at least one discontinuous portion.
(2) Each non-deposition margin does not intersect.
(3) There is at least one narrow portion in the width direction between adjacent non-deposition margins.   The metal vapor deposition film according to claim 1, wherein all of the plurality of non-deposition margins in the width direction are curves.   2. The metal-deposited film according to claim 1, wherein the plurality of non-deposition margins in the width direction are formed by alternately arranging straight lines and curves. The metal vapor deposition film according to claim 1, wherein a width of the narrow portion and a width of a discontinuous portion of the non-deposition margin in the width direction are 0.2 mm or more and less than P (mm).
(However, P (mm): the distance between each intersection of the non-deposition margin in the longitudinal direction and the non-deposition margin in each width direction.)   The film capacitor which uses the metal vapor deposition film in any one of Claims 1-4 as a constituent material.

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