JP2009147226A - Exposure apparatus, exposure method, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure apparatus capable of suppressing the decline of throughput and excellently forming a device. <P>SOLUTION: The exposure apparatus has a first optical unit for irradiating a first irradiation region with patterned first exposure light and a second optical unit capable of irradiating a substrate with patterned second exposure light simultaneously with the first exposure light, for which a second irradiation region is set at a position different from the first irradiation region. In parallel with the operation of exposing a first shot region where a chip configuring the device can be formed on the substrate by the first exposure light, a second shot region where the chip is not formed on the substrate is exposed by the second exposure light. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an exposure apparatus that exposes a substrate, an exposure method, and a device manufacturing method.

The exposure apparatus exposes a shot area where a chip can be formed on a substrate with exposure light patterned into a chip pattern in order to form a chip constituting the device. Further, for example, as disclosed in the following patent document for the purpose of suppressing deterioration of a device (chip) in a shot region caused by various process processes such as a development process, an etching process, and a CMP process performed after the exposure process. In addition, a region called an edge shot region (or a chipped shot region) in the vicinity of the edge of a substrate where a chip is not formed is also exposed with exposure light patterned into a chip pattern.
US Pat. No. 6,381,004 International Publication No. 2004/053951 Pamphlet

  If an edge shot region is exposed using an exposure apparatus for forming a chip pattern, the throughput may decrease. Therefore, it is desired to devise a technique that can satisfactorily form a device while suppressing a decrease in throughput.

  An object of the present invention is to provide an exposure apparatus, an exposure method, and a device manufacturing method that can suppress a decrease in throughput and that can favorably form a device.

  According to the first aspect of the present invention, there is provided an exposure apparatus that exposes a substrate, the first optical unit that irradiates the first irradiation area with the patterned first exposure light, and the pattern simultaneously with the first exposure light. And a second optical unit capable of irradiating the substrate with the second exposure light and setting the second irradiation region at a position different from the first irradiation region, and forming a chip constituting the device on the substrate In parallel with the operation of exposing the first shot area with the first exposure light, an exposure apparatus is provided that exposes the second shot area in which no chip is formed on the substrate with the second exposure light.

  According to the second aspect of the present invention, on the substrate on which the exposure operation of the plurality of first shot regions is performed with the patterned first exposure light, between the first shot region and the edge of the substrate. An exposure apparatus that exposes a second shot region that is not irradiated with the first exposure light with the patterned second exposure light is provided.

  According to the third aspect of the present invention, the first shot region and the edge of the substrate are exposed on the substrate on which the exposure operation of the plurality of first shot regions is performed with the first exposure light patterned by the first mask. An exposure apparatus that exposes a second shot region that is not irradiated with the first exposure light between the first exposure light and the second exposure light patterned by a second mask having a pattern density substantially the same as the pattern density of the first mask. .

  According to the fourth aspect of the present invention, effective exposure in which a plurality of first shot areas are set on a substrate on which an exposure operation of the plurality of first shot areas is performed with patterned first exposure light. An exposure apparatus is provided that exposes a second shot area outside the range with a patterned second exposure light having at least a variable density.

  According to the fifth aspect of the present invention, the plurality of first shot regions within the effective exposure range of the substrate are exposed on the substrate in parallel with at least a part of the exposure operation for exposing with the patterned first exposure light. An exposure apparatus is provided that performs an operation of exposing a second shot region outside the effective exposure range with the patterned second exposure light.

  According to a sixth aspect of the present invention, there is provided a device manufacturing method including exposing a substrate using the exposure apparatus of the above aspect and developing the exposed substrate.

  According to a seventh aspect of the present invention, there is provided an exposure method for exposing a substrate, wherein a first shot region where a chip constituting a device can be formed on the substrate is patterned to irradiate the first irradiation region. In parallel with the exposure with the first exposure light and the exposure operation of the first shot region, the second irradiation region where the chip is not formed on the substrate is irradiated to the second irradiation region whose position is different from the first irradiation region. And exposing with a patterned second exposure light.

  According to the eighth aspect of the present invention, on the substrate on which the exposure operation of the plurality of first shot regions is performed with the patterned first exposure light, between the first shot region and the edge of the substrate. An exposure method is provided in which a second shot region that is not irradiated with the first exposure light is exposed with the patterned second exposure light.

  According to the ninth aspect of the present invention, the first shot region and the edge of the substrate are exposed on the substrate on which the exposure operation of the plurality of first shot regions is performed with the first exposure light patterned by the first mask. An exposure method is provided in which a second shot region that is not irradiated with the first exposure light between the first exposure light and the second exposure light patterned with a second mask having a pattern density substantially the same as the pattern density of the first mask is exposed. .

  According to the tenth aspect of the present invention, effective exposure in which a plurality of first shot areas are set on a substrate on which an exposure operation of the plurality of first shot areas is performed with patterned first exposure light. There is provided an exposure method for exposing a second shot region outside the range with a patterned second exposure light having at least a variable density.

  According to the eleventh aspect of the present invention, the plurality of first shot regions within the effective exposure range of the substrate are exposed on the substrate in parallel with at least a part of the exposure operation for exposing with the patterned first exposure light. An exposure method for performing an operation of exposing the second shot area outside the effective exposure range with the patterned second exposure light is provided.

  According to a twelfth aspect of the present invention, there is provided a device manufacturing method including exposing a substrate using the exposure method of the above aspect and developing the exposed substrate.

  According to the present invention, a reduction in throughput can be suppressed and a device can be satisfactorily formed.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as the X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as the Y-axis direction, and a direction orthogonal to each of the X-axis direction and Y-axis direction (that is, the vertical direction) is defined as the Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

<First Embodiment>
A first embodiment will be described. FIG. 1 is a schematic block diagram that shows an example of an exposure apparatus EX according to the first embodiment. In FIG. 1, the exposure apparatus EX includes a first optical unit 1 that irradiates a patterned first exposure light L1 onto a first irradiation region PR1, and a second exposure light L2 that is patterned simultaneously with the first exposure light L1. Is provided on the substrate P, and the second optical unit 2 in which the second irradiation region PR2 is set at a position different from the first irradiation region PR1, and the control device 5 that controls the operation of the entire exposure apparatus EX. . The control device 5 includes a computer system, for example.

  The substrate P is a substrate for manufacturing a chip constituting a device, and includes a substrate in which a photosensitive film Rg is formed on a base material such as a semiconductor wafer such as a silicon wafer. The photosensitive film Rg is a film of a photosensitive material (photoresist).

  In the present embodiment, the exposure apparatus EX performs exposure on the substrate P in parallel with the operation of exposing the first shot region NS on which the chip constituting the device can be formed on the substrate P with the patterned first exposure light L1. Then, the second shot area ES where no chip is formed is exposed with the patterned second exposure light L2.

  The first optical unit 1 includes a first terminal optical element 16 having an emission part (exit surface) 7 that emits the patterned first exposure light L 1, and the first optical element 16 emitted from the first terminal optical element 16. The first irradiation region PR1 on the substrate P can be irradiated with the exposure light L1.

  The second optical unit 2 includes a second terminal optical element 23 having an emission part (exit surface) 9 that emits the patterned second exposure light L 2, and the second optical element 23 emitted from the second terminal optical element 23. The second irradiation region PR2 on the substrate P can be irradiated with the exposure light L2.

  The exposure apparatus EX includes a substrate stage 6 that is movable while holding the substrate P. The substrate stage 6 holds the substrate P, the irradiation position of the first exposure light L1 emitted from the first terminal optical element 16, and the irradiation of the second exposure light L2 emitted from the second terminal optical element 23. It can be moved to a position. The substrate stage 6 can arrange the held substrate P at a position facing the emitting portion 7 of the first terminal optical element 16 and a position facing the emitting portion 9 of the second terminal optical element 23.

  The second terminal optical element 23 of the second optical unit 2 can face at least a part of the substrate P disposed at a position facing the first terminal optical element 16 of the first optical unit 1. The first optical unit 1 and the second optical unit are arranged so that the emitting portion 7 of the first terminal optical element 16 and the emitting portion 9 of the second terminal optical element 23 can face each other simultaneously with the substrate P held on the substrate stage 6. 2 is determined.

  In the present embodiment, the second optical unit 2 includes first to fourth exposure units 2A to 2D each having an emission unit 9 for emitting the second exposure light L2. That is, the second optical unit 2 has four emission units 9 and can simultaneously irradiate each of the four second irradiation regions PR2 having different positions on the substrate P with the second exposure light L2.

  In the present embodiment, the first optical unit 1 patterns the first exposure light L1 with the first mask M1, and the second optical unit 2 patterns the second exposure light L2 with the second mask M2. The first mask M1 includes a reticle on which a pattern (chip pattern) for patterning the first exposure light L1 is formed. The second mask M2 includes a reticle on which a pattern for patterning the second exposure light L2 is formed. The reticle includes a transmission type mask in which a predetermined pattern is formed on a transparent plate such as a glass plate using a light shielding film such as chromium. This transmission type mask is not limited to a binary mask in which a pattern is formed by a light shielding film, and includes, for example, a phase shift mask such as a halftone type or a spatial frequency modulation type. In the present embodiment, a transmissive mask is used as the first mask M1 and the second mask M2, but a reflective mask may be used.

  The first shot region NS and the second shot region ES will be described with reference to FIGS. FIG. 2 is a plan view for explaining the first shot area NS and the second shot area ES on the substrate P, and FIG. 3 is an enlarged view of a part of FIG.

  The first shot area NS is an area in which chips constituting a product device on the substrate P are formed. The first shot area NS is an area where a chip can be formed, and has a predetermined size capable of forming a chip. In order to form a chip in the first shot area NS on the substrate P, the first shot area NS is exposed by the first optical unit 1 with the first exposure light L1 patterned into a chip pattern.

  The first shot area NS is arranged inside the effective exposure range of the substrate P excluding the area near the edge of the surface of the substrate P. The effective exposure range is the most range of the surface of the substrate P formed of the photosensitive film Rg including the center of the surface of the substrate P. The effective exposure range is a range in which the first shot area NS can be arranged, and is a range in which a chip pattern can be formed with a desired accuracy.

  In this embodiment, in order to manufacture the substrate P to be exposed, after the process of forming the photosensitive film Rg on the substrate P is executed, the edge rinse process of removing the photosensitive film Rg existing on the edge of the substrate P is performed. Executed. Near the edge of the surface of the substrate P, there is an ineffective exposure range including a ring-shaped edge rinse region where the photosensitive film Rg does not exist and a ring-shaped margin region having a predetermined width inside thereof. The ineffective exposure range is a range in which it is difficult to form a chip pattern with a desired accuracy. In the present embodiment, the effective exposure range is a range inside the non-effective exposure range. In the present embodiment, the ineffective exposure range includes the edge-rinsed edge-rinsed region, but it may not be edge-rinsed.

  In the present embodiment, a plurality of first shot areas NS are set in a matrix within the effective exposure range on the surface of the substrate P. In the present embodiment, each of the first shot areas NS has substantially the same size and substantially the same shape. The first shot region NS is substantially rectangular in the XY plane, has a size WX in the X-axis direction, and has a size WY in the Y-axis direction.

  The second shot area ES is an area where no chip is formed on the substrate P. The second shot area ES is an area where chips cannot be arranged (cannot be formed) and is smaller than the first shot area NS. That is, a part of the chip that can be arranged in the first shot area NS protrudes outside the substrate P (outside the effective exposure range) in the second shot area ES. The second shot region ES is located on the substrate P between the first shot region NS and the edge of the substrate P, and is not irradiated with the first exposure light L1 for forming a chip to be a product. The second shot area ES is exposed by the second optical unit 2 with the second exposure light L2 patterned into a predetermined pattern.

  A plurality of second shot areas ES are arranged between the first shot area NS arranged in the effective exposure range and the edge of the substrate P. In the present embodiment, at least a part of the second shot area ES is set outside the effective exposure range of the substrate P. The outside of the effective exposure range includes the above-described non-effective exposure range.

  In the following description, the first shot area NS is appropriately referred to as a normal shot area NS, and the second shot area ES is appropriately referred to as an edge shot area ES.

  The first optical unit 1 will be described with reference to FIG. The first optical unit 1 includes a first mask stage 13 movable while holding the first mask M1, a substrate stage 6 movable while holding the substrate P, and positions of the first mask stage 13 and the substrate stage 6 An image of the pattern of the interferometer system 14 that measures information, the first illumination system IL1 that illuminates the first mask M1 with the first exposure light L1, and the first mask M1 that is illuminated with the first exposure light L1 is displayed on the substrate P. And a first projection optical system PL1 that projects onto the projector.

The first illumination system IL1 illuminates the first illumination region IR1 in the first mask M1 with the first exposure light L1 having a uniform illuminance distribution. Examples of the first exposure light L1 emitted from the first illumination system IL1 include far ultraviolet light (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp (for example) DUV light), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm) are used. In the present embodiment, ArF excimer laser light, which is ultraviolet light (vacuum ultraviolet light), is used as the first exposure light L1.

  The first illumination system IL1 includes an adjustment mechanism 15 that can adjust the first illumination region IR1 in the first mask M1, as disclosed in, for example, US Pat. No. 6,597,002. The adjustment mechanism 15 can adjust the size, position, and shape of the first illumination region IR1. The adjustment mechanism 15 can adjust the size, position, and shape of the first irradiation region PR1 in the substrate P by adjusting the first illumination region IR1 in the first mask M1.

  The first mask stage 13 has a holding portion 13H to which the first mask M1 can be attached and detached. With the first mask M1 held by the holding portion 13H, the first mask stage 13 is at least in three directions, the X axis, the Y axis, and the θZ direction. It is movable. The first mask stage 13 is moved by the operation of a drive system 13D including an actuator such as a linear motor. The laser interferometer 14 </ b> A of the interferometer system 14 measures position information regarding the X-axis, Y-axis, and θZ directions of the first mask stage 13 using the measurement mirror 13 </ b> R provided on the first mask stage 13. The control device 5 operates the drive system 13D based on the measurement result of the interferometer system 14, and controls the position of the first mask M1 held on the first mask stage 13.

  The first projection optical system PL1 projects the pattern image of the first mask M1 onto the substrate P at a predetermined projection magnification. The plurality of optical elements of the first projection optical system PL1 are held by a lens barrel. The first projection optical system PL1 of the present embodiment is a reduction system whose projection magnification is, for example, 1/4, 1/5, or 1/8. The first projection optical system PL1 may be either an equal magnification system or an enlargement system. In the present embodiment, the optical axis of the first projection optical system PL1 is parallel to the Z axis. The first projection optical system PL1 may be any of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the first projection optical system PL1 may form either an inverted image or an erect image.

  Of the plurality of optical elements of the first projection optical system PL1, the first terminal optical element 16 closest to the image plane of the first projection optical system PL1 is patterned first exposure light L1 for irradiating the substrate P. It has an injection part 7 which injects. The exit portion 7 of the first terminal optical element 16 and the surface of the substrate P held by the substrate stage 6 can be opposed to each other, and the substrate stage 6 moves while holding the substrate P with respect to the first terminal optical element 16. Is possible.

  The substrate stage 6 has a holding portion 6H to which the substrate P can be attached and detached, and the X-axis, Y-axis, Z-axis, θX, θY, and θZ on the surface plate 10 with the substrate P held by the holding portion 6H. It can move in six directions. In the present embodiment, the substrate stage 6 holds the substrate P so that the surface of the substrate P and the XY plane are substantially parallel. The substrate stage 6 is moved by the operation of a drive system 6D including an actuator such as a linear motor. The laser interferometer 14 </ b> B of the interferometer system 14 measures position information regarding the X-axis, Y-axis, and θZ directions of the substrate stage 6 using a measurement mirror 6 </ b> R provided on the substrate stage 6. Further, surface position information (position information regarding the θX, θY, and Z-axis directions) of the surface of the substrate P held on the substrate stage 6 is detected by the focus / leveling detection system 24. In this embodiment, the focus / leveling detection system 24 is an oblique incidence method, and receives a detection light reflected by the substrate P and a projector 24A that irradiates the substrate P with detection light from a direction inclined with respect to the Z axis. Possible receiver 24B. The control device 5 operates the drive system 6D based on the measurement result of the interferometer system 14 and the detection result of the focus / leveling detection system 24 to control the position of the substrate P held on the substrate stage 6.

  The exposure apparatus EX also includes an alignment system 17 that detects position information of at least the normal shot area NS of the substrate P held on the substrate stage 6. The alignment system 17 can detect an alignment mark formed on the substrate P corresponding to the normal shot region NS. The control device 5 detects the alignment mark of the substrate P with the alignment system 17 while monitoring the position information of the substrate stage 6 with the interferometer system 14, thereby normal shots in the XY plane defined by the interferometer system 14. The position information of the area NS can be detected. The alignment system 17 employs, for example, an FIA (Field Image Alignment) type alignment system as disclosed in US Pat. No. 5,493,403.

  In the present embodiment, the control device 5 executes an EGA (enhanced global alignment) process as disclosed in, for example, US Pat. No. 4,780,617 using the detection result of the alignment system 17, Position information (including the positional relationship between the normal shot area NS and the edge shot area ES) of the normal shot area NS and the edge shot area ES can be derived.

  The exposure apparatus EX includes an aerial image measurement system 18 that measures an aerial image by the first projection optical system PL1, as disclosed in, for example, US Patent Application Publication No. 2002/0041377. The light receiving unit (optical member, slit plate) of the aerial image measurement system 18 is disposed on the light emission side (image surface side) of the first projection optical system PL1, and the aerial image measurement system 18 detects the first exposure light L1. The position of one irradiation region PR1 (the projection position of the pattern image by the first projection optical system PL1) is detected. In the present embodiment, the light receiving unit of the aerial image measurement system 18 is disposed on the substrate stage 6.

  When exposing the normal shot region NS of the substrate P with the first optical unit 1, the control device 5 is held on the substrate stage 6 by the alignment system 17 while monitoring the position information of the substrate stage 6 by the interferometer system 14. The alignment mark formed on the substrate P is detected, and the position information of the normal shot area NS in the XY plane defined by the interferometer system 14 is detected. The control device 5 detects the aerial image of the first projection optical system PL1 with the aerial image measurement system 18 while monitoring the position information of the substrate stage 6 with the interferometer system 14, and is defined by the interferometer system 14. The projection position of the pattern image by the first projection optical system PL1 in the XY plane is detected. The control device 5 uses the normal shot area NS and the aerial image measurement system 18 to obtain the normal shot area NS based on the position information of the normal shot area NS and the projection position of the pattern image by the first projection optical system PL1. The positional relationship between the position and the projection position of the pattern image by the first projection optical system PL1 is adjusted, and each of the normal shot areas NS is exposed with the patterned first exposure light L1.

  In the present embodiment, the normal shot region NS is exposed by scanning the normal shot region NS with the first exposure light L1 by relatively moving the substrate P and the first irradiation region PR1 in the Y-axis direction. Including. In the present embodiment, the control device 5 applies to the first irradiation region (projection region of the first projection optical system PL1) PR1 of the first exposure light L1 emitted from the emission unit 7 of the first terminal optical element 16. The substrate P is moved in the Y-axis direction, and the first mask M1 is moved in the Y-axis direction with respect to the first illumination region IR1 of the first illumination system IL1 in synchronization with the movement of the substrate P in the Y-axis direction. However, the normal shot region NS of the substrate P is irradiated with the first exposure light L1 via the first projection optical system PL1, and the normal shot region NS of the substrate P is exposed with the first exposure light L1. Thereby, an image of the pattern of the first mask M1 is projected on the normal shot area NS of the substrate P, and a pattern based on the first mask M1 is generated on the normal shot area NS.

  The first mask M1 has a pattern formation region in which a chip pattern is formed. In the present embodiment, in the pattern formation region of the first mask M1, a chip pattern for forming a chip constituting a device that is a product on the substrate P is arranged for one chip.

  The normal shot area NS is irradiated with the first position where the rear end of the first irradiation area PR1 coincides with the front end of the normal shot area NS immediately after the start of the scanning exposure and immediately before the end of the scanning exposure in the scanning exposure in the first optical unit 1. The region PR1 includes a second position where the front end of the region PR1 coincides with the rear end of the normal shot region NS. The pattern image of the entire pattern formation region including the front end and the rear end of the pattern formation region of the first mask M1 in the scanning exposure fits in the normal shot region NS in a single scanning operation. That is, in the present embodiment, one chip is formed in one normal shot area NS.

  Next, the second optical unit 2 will be described. FIG. 4 is a perspective view showing the second optical unit 2, and FIG. 5 is a schematic block diagram showing the first exposure unit 2A. 1, 4, and 5, the second optical unit 2 exposes the edge shot region ES of the substrate P held on the substrate stage 6 with the second exposure light L <b> 2 patterned by the second mask M <b> 2. It has 1st, 2nd, 3rd, 4th exposure part 2A, 2B, 2C, 2D. The second optical unit 2 can simultaneously irradiate each of the four second irradiation regions PR2 having different positions on the substrate P with the second exposure light L2 using the first to fourth exposure units 2A to 2D.

  The first to fourth exposure units 2A to 2D are disposed in the vicinity of the first projection optical system PL1 of the first optical unit 1. The first to fourth exposure units 2A to 2D are arranged around the first projection optical system PL1. In the present embodiment, the first exposure unit 2A is arranged on the −X side of the first projection optical system PL1 with respect to the optical axis of the first projection optical system PL1, and the second exposure unit 2B is on the −Y side. The third exposure unit 2C is arranged on the + X side, and the fourth exposure unit 2D is arranged on the + Y side.

  In the present embodiment, the first, second, third, and fourth exposure units 2A, 2B, 2C, and 2D have the same configuration. In the following description, the first exposure unit 2A will be mainly described, and the description of the second to fourth exposure units 2B to 2D will be omitted.

  The first exposure unit 2A performs second exposure on the second mask stage 20 that is movable while holding the second mask M2, the interferometer system 21 that measures positional information of the second mask stage 20, and the second mask M2. A second illumination system IL2 that illuminates with the light L2 and a second projection optical system PL2 that projects an image of the pattern of the second mask M2 illuminated with the second exposure light L2 onto the substrate P are provided.

The second illumination system IL2 illuminates the second illumination region IR2 in the second mask M2 with the second exposure light L2 having a uniform illuminance distribution. As the second exposure light L2 emitted from the second illumination system IL2, for example, far ultraviolet light (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp ( DUV light), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm) are used. In the present embodiment, the wavelength of the first exposure light L1 and the wavelength of the second exposure light L2 are substantially the same. That is, in the present embodiment, ArF excimer laser light is used as the second exposure light L2. In the present embodiment, ArF excimer laser light emitted from a light source device (laser device) (not shown) is supplied to the second illumination system IL2 by a light guide member such as an optical fiber.

  Further, the second illumination system IL2 has an adjustment mechanism 22 that adjusts the second illumination region IR2 in the second mask M2. In the present embodiment, the adjustment mechanism 22 includes a blind member 22A having an opening 22K and a blade member 22B movable with respect to the opening 22K, which are disposed in the vicinity of the second mask M2. The adjustment mechanism 22 can adjust the size, position, and shape of the second illumination region IR2 by moving the blade member 22B with respect to the opening 22K. The adjustment mechanism 22 can adjust the size, position, and shape of the second irradiation region PR2 on the substrate P by adjusting the second illumination region IR2 on the second mask M2. For example, an adjustment mechanism as disclosed in US Pat. No. 6,597,002 can be used as the adjustment mechanism 22.

  The second mask stage 20 has a holding portion 20H to which the second mask M2 can be attached and detached. With the second mask M2 held by the holding portion 20H, the second mask stage 20 has at least three directions of the X axis, the Y axis, and the θZ direction. It is movable. The second mask stage 20 moves by the operation of a drive system 20D including an actuator such as a linear motor. The laser interferometer of the interferometer system 21 measures position information regarding the X-axis, Y-axis, and θZ direction of the second mask stage 20 using a measurement mirror 20R provided on the second mask stage 20. Based on the measurement result of the interferometer system 21, the control device 5 operates the drive system 20 </ b> D to control the position of the second mask M <b> 2 held on the second mask stage 20.

  The second projection optical system PL2 projects the pattern image of the second mask M2 onto the substrate P at a predetermined projection magnification. The plurality of optical elements of the second projection optical system PL2 are held by a lens barrel. The second projection optical system PL2 of the present embodiment is a reduction system whose projection magnification is, for example, 1/4, 1/5, or 1/8. Note that the second projection optical system PL2 may be either an equal magnification system or an enlargement system. In the present embodiment, the optical axis of the second projection optical system PL2 is parallel to the Z axis. The second projection optical system PL2 may be any of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the second projection optical system PL2 may form either an inverted image or an erect image.

  In the present embodiment, the projection magnification of the first projection optical system PL1 and the projection magnification of the second projection optical system PL2 are substantially the same.

  Of the plurality of optical elements of the second projection optical system PL2, the second terminal optical element 23 closest to the image plane of the second projection optical system PL2 is patterned second exposure light L2 for irradiating the substrate P. It has the injection part 9 which injects. The exit portion 9 of the second terminal optical element 23 and the surface of the substrate P held by the substrate stage 6 can be opposed to each other, and the substrate stage 6 moves while holding the substrate P with respect to the second terminal optical element 23. Is possible.

  In the present embodiment, the second optical unit 2 includes a drive system 26 that can move the first exposure unit 2A. The drive system 26 maintains the positional relationship among at least the second illumination system IL2, the second mask stage 20, the second projection optical system PL2, and the interferometer system 21, and the second illumination system IL2, The second mask stage 20, the second projection optical system PL2, and the interferometer system 21 can be moved together. In the present embodiment, the second illumination system IL2, the second mask stage 20, the second projection optical system PL2, the interferometer system 21 and the like are disposed in the chamber 30, supported by a predetermined support mechanism, and driven. The system 26 can move the second illumination system IL2, the second mask stage 20, the second projection optical system PL2, and the interferometer system 21 together by moving the chamber 30 thereof. When the first exposure unit 2A is moved by the drive system 26, the emission unit 9 of the second terminal optical element 23 that emits the second exposure light L2 is also moved. As the emission unit 9 moves, the second irradiation region PR2 also moves. That is, the drive system 26 can adjust the position of the second irradiation region PR2. A drive amount of the drive system 26 (amount of movement of the chamber 30) is measured by a measurement system 31 including an encoder system. Similarly, the second optical unit 2 can move each of the second, third, and fourth exposure units 2B, 2C, and 2D by using the drive system 26.

  The control device 5 can adjust the positional relationship between the first irradiation region PR1 and the second irradiation region PR2 using the drive system 26. The control device 5 can adjust the positional relationship between the first irradiation region PR1 and the second irradiation region PR2 by adjusting the drive amount of the drive system 26 based on the measurement result of the measurement system 31.

  In the present embodiment, the exposure operation of the edge shot region ES is performed by relatively moving the substrate P and the second irradiation region PR2 with respect to the Y-axis direction, and scanning and exposing the edge shot region ES with the second exposure light L2. Including. In the present embodiment, the control device 5 applies to the second irradiation region (projection region of the second projection optical system PL2) PR2 of the second exposure light L2 emitted from the emission unit 9 of the second terminal optical element 23. The substrate P is moved in the Y-axis direction, and the second mask M2 is moved in the Y-axis direction with respect to the second illumination region IR2 of the second illumination system IL2 in synchronization with the movement of the substrate P in the Y-axis direction. However, the edge exposure region ES of the substrate P is irradiated with the second exposure light L2 via the second projection optical system PL2, and the edge shot region ES of the substrate P is exposed with the second exposure light L2. Thereby, an image of the pattern of the second mask M2 is projected onto the edge shot area ES of the substrate P, and a pattern based on the second mask M2 is generated in the edge shot area ES.

  The second optical unit 2 makes the pattern generated in the edge shot area ES variable. In the present embodiment, the second optical unit 2 changes the pattern generated in the edge shot area ES according to the pattern generated in the normal shot area NS by the first optical unit 1. In the present embodiment, the second optical unit 2 can change at least the density of the pattern generated in the edge shot region ES. In the present embodiment, the second optical unit 2 generates a pattern having substantially the same density as the pattern generated in the normal shot area NS by the first optical unit 1 in the edge shot area ES.

  In the present embodiment, a plurality of second masks M2 having different pattern densities are prepared, and the second optical unit 2 replaces the second mask M2 in accordance with the pattern generated in the normal shot area NS.

  In the present embodiment, the first exposure unit 2A of the second optical unit 2 carries the second mask M2 into the second mask stage 20 and carries out the second mask M2 from the second mask stage 20. A transport system 27 including a member 27A is provided. The transport system 27 can transport the second mask M2 between a mask library (not shown) in which a plurality of second masks M2 having different pattern densities are accommodated and the second mask stage 20. Further, as described above, the second mask stage 20 can be attached and detached with the second mask M2. Accordingly, the first exposure unit 2A uses the second mask stage 20 to which the second mask M2 can be attached and detached and the transport system 27 that transports the second mask M2, to the second mask stage 20 with respect to the second mask stage 20. M2 can be exchanged.

  The control device 5 exchanges the second mask M2 held on the second mask stage 13 according to the pattern generated in the normal shot area NS. The control device 5 selects a predetermined mask from a plurality of second masks M2 accommodated in the mask library so that a pattern having substantially the same density as the pattern generated in the normal shot area NS is generated in the edge shot area ES. The second mask M2 is selected, and the selected second mask M2 is held on the second mask stage 20.

  In the present embodiment, the second optical unit 2 holds the second mask M2 having a pattern density substantially the same as the pattern density of the first mask M1 used in the first optical unit 1 on the second mask stage 13, and The second exposure light L2 is patterned by the second mask M2. As described above, in the present embodiment, the projection magnification of the first projection optical system PL1 and the projection magnification of the second projection optical system PL2 are substantially the same. Accordingly, the second optical unit 2 can generate a pattern having substantially the same density as the pattern generated in the normal shot area NS by the first optical unit 1 in the edge shot area ES.

  The pattern density of the mask is, for example, a ratio (occupancy ratio) of a light shielding portion formed per unit area of the mask. In other words, the mask pattern density is the transmittance of the mask pattern formation region with respect to the exposure light. The pattern density (transmittance) of the mask includes an average value of the transmittance in the pattern formation region. The pattern density of the mask may include the ratio of the light shielding part to the light transmission part in the pattern formation region.

  As an example, the pattern density of the substrate (pattern density generated in the shot region of the substrate) is a ratio of a portion where the exposure light is not irradiated per unit area of the substrate. In other words, the pattern density of the substrate is a ratio of a portion where a pattern (concave portion) is not formed per unit area of the substrate when the photosensitive film Rg is a positive type, for example. The pattern density of the substrate (pattern density generated in the shot area) includes an average value of the ratio of the portions that are not irradiated with the exposure light per shot area. Note that the pattern density of the substrate may include a ratio of a concave portion to a convex portion in a shot region on the substrate.

  The pattern density of the mask can be changed by changing the ratio of the line width H1 of the line and space pattern to the space width H2. For example, as shown in FIG. 6A, the ratio of the width H1 of the line (light shielding portion) of the line and space pattern formed on the second mask M2 to the width H2 of the space (transmission portion) is 1: 1. By doing so, the pattern density of the second mask M2 can be made 50%. Further, as shown in FIG. 6B, the ratio of the line width H1 of the line and space pattern formed in the second mask M2 to the space width H2 is set to 2: 1, whereby the second mask M2. The pattern density can be about 67%.

  In the present embodiment, the second optical unit 2 generates a pattern having a larger line width in the edge shot region ES than the pattern generated in the normal shot region NS by the first optical unit 1. When the line width of the pattern generated in the normal shot region NS is, for example, about 65 nm to 500 nm, a pattern having a line width of, for example, 500 nm or more is generated in the edge shot region ES.

  FIG. 7 is a schematic diagram for explaining the positional relationship between the first irradiation region PR1 by the first optical unit 1 and the second irradiation region PR2 by the second optical unit 2. As shown in FIG. 7, the first irradiation region PR1 of the first exposure light L1 has a slit shape whose longitudinal direction is the X-axis direction. Further, the second irradiation region PR2 of the second exposure light L2 has a slit shape whose longitudinal direction is the X-axis direction. As described above, in the present embodiment, the substrate stage 6 holds the substrate P so that the surface of the substrate P and the XY plane are substantially parallel. On the surface of the substrate P held on the substrate stage 6, the first exposure light L1 is irradiated to the slit-shaped first irradiation region PR1 that is long in the X-axis direction, and the second exposure light L2 is long in the X-axis direction. The slit-shaped second irradiation region PR2 is irradiated.

  The first irradiation region PR1 and the second irradiation region PR2 are set so that their positions are different in an XY plane substantially parallel to the surface of the substrate P. Specifically, the second irradiation region PR2 is set to have a position different from that of the first irradiation region PR1 in the X-axis direction in the XY plane. Alternatively, the second irradiation region PR2 is set so that the position is different from the first irradiation region PR1 in the Y-axis direction.

  As shown in FIG. 7, in the present embodiment, four second irradiation regions PR2 are arranged around the first irradiation region PR1. The four second irradiation regions PR2 are different in position from the first irradiation region PR1 in the X-axis direction, the second irradiation region PR2 by the first and third exposure units 2A and 2C, and the first irradiation region PR1 in the Y-axis direction. And the second irradiation region PR2 by the second and fourth exposure units 2B and 2D having different positions.

  The second irradiation region PR2 by the first and third exposure units 2A and 2C is disposed on both sides of the first irradiation region PR1 with respect to the X-axis direction. The positions in the Y-axis direction of the first irradiation region PR1 and the second irradiation region PR2 by the first and third exposure units 2A and 2C are substantially the same.

  Further, the second irradiation regions PR2 by the second and fourth exposure units 2B and 2D are disposed on both sides of the first irradiation region PR1 with respect to the Y-axis direction. The positions in the X-axis direction of the first irradiation region PR1 and the second irradiation region PR2 by the second and fourth exposure units 2B and 2D are substantially the same.

  That is, in the present embodiment, the second irradiation region PR2 can be disposed on both sides of the first irradiation region PR1 with respect to the X-axis direction and on both sides of the first irradiation region PR1 with respect to the Y-axis direction.

  In the present embodiment, the second irradiation region PR2 by the first and third exposure units 2A and 2C, which is different in position from the first irradiation region PR1 in the X axis direction, is a distance from the first irradiation region PR1 in the X axis direction. Is approximately an integral multiple of the size of the normal shot area NS. That is, the distance D1 in the X-axis direction between the first irradiation region PR1 and the second irradiation region PR2 by the first exposure unit 2A is substantially an integral multiple of the size WX in the X-axis direction of the normal shot region NS. The distance D3 in the X-axis direction between the irradiation region PR1 and the second irradiation region PR2 by the third exposure unit 2C is substantially an integer multiple of the size WX in the X-axis direction of the normal shot region NS.

  In the present embodiment, the second irradiation region PR2 by the second and fourth exposure units 2B and 2D, which is different in position from the first irradiation region PR1 in the Y-axis direction, is different from the first irradiation region PR1 in the Y-axis direction. Is approximately an integral multiple of the size of the normal shot area NS. That is, the distance D2 in the Y-axis direction between the first irradiation region PR1 and the second irradiation region PR2 by the second exposure unit 2B is substantially an integer multiple of the size WY in the Y-axis direction of the normal shot region NS. The distance D4 in the Y-axis direction between the irradiation region PR1 and the second irradiation region PR2 by the fourth exposure unit 2D is substantially an integral multiple of the size WY in the Y-axis direction of the normal shot region NS.

  Next, an example of the operation of the exposure apparatus EX according to the present embodiment will be described.

  In order to start the exposure of the substrate P, the first mask M1 is loaded (loaded) onto the first mask stage 13 by a predetermined transport system (not shown) and held on the first mask stage 13. Further, the control device 5 uses the transport system 27 to load (load) the second mask M2 having a pattern density substantially the same as the pattern density of the first mask M1 into each of the plurality of (four) second mask stages 20. ) The second mask stage 20 holds the loaded second mask M2.

  When the substrate P to be exposed is loaded (loaded) onto the substrate stage 6 and held on the substrate stage 6, the control device 5 uses the alignment system 17 for the positional information of the normal shot area NS and the edge shot area ES. Predetermined processing (including measurement processing and adjustment processing) such as detection, measurement of an aerial image by the first projection optical system PL1 using the aerial image measurement system 18, and EGA processing is executed.

  Accordingly, the position of the first irradiation region PR1 of the first exposure light L1 within the coordinate system defined by the interferometer system 4 (the projection position of the pattern image of the first mask M1 by the first projection optical system PL1) and A positional relationship with the position of the normal shot area NS is derived.

  In the present embodiment, the control device 5 uses the aerial image measurement system 18 to perform aerial image measurement by the second projection optical system PL2. The control device 5 uses the interferometer system 14 to measure the positional information of the substrate stage 6 on which the light receiving unit of the aerial image measurement system 18 is arranged, and to receive the light of the aerial image measurement system 18 on the substrate stage 6. The unit receives the second exposure light L2 emitted from the emission unit 9 of the second projection optical system PL2, and performs measurement of the aerial image by the second projection optical system PL2. As a result, the position of the second irradiation region PR2 of the second exposure light L2 within the coordinate system defined by the interferometer system 4 (the projection position of the pattern image of the second mask M2 by the second projection optical system PL2) is set. Derived. Further, the positional relationship between the position of the first irradiation region PR1 of the first exposure light L1 and the position of the second irradiation region PR2 of the second exposure light L2 in the coordinate system defined by the interferometer system 14, and the second A positional relationship between the position of the second irradiation region PR2 of the exposure light L2 and the position of the edge shot region ES is derived.

  The positional relationship between the first irradiation region PR1 and the normal shot region NS, the positional relationship between the second irradiation region PR2 and the edge shot region ES, and the positional relationship between the first irradiation region PR1 and the second irradiation region PR2 were derived. Then, the control apparatus 5 adjusts the position of 2nd irradiation area | region PR2 with respect to 1st irradiation area | region PR1, for example as needed. The control device 5 prevents the edge shot area ES from being irradiated with the second exposure light L2 while the normal shot area NS is irradiated with the first exposure light L1, and the normal shot area NS is not irradiated with the second exposure light L2. In addition, the position of the second irradiation region PR2 is adjusted. The position of the second irradiation region PR2 can be adjusted by moving the chamber 30 using the driving system 26. The control device 5 monitors the measurement result of the measurement system 31, and the normal exposure region NS is irradiated with the first exposure light L1 based on the measurement result of the measurement system 31 and the positional relationship derived above. The position of the second irradiation region PR2 is adjusted so that the edge exposure region ES is irradiated with the second exposure light L2 while the normal shot region NS is not irradiated with the second exposure light L2.

  Further, the control device 5 irradiates the edge shot region ES with the second exposure light L2 while the normal shot region NS is irradiated with the first exposure light L1, and the normal shot region NS with the second exposure light L2. As a result, the size, position, and shape of the second irradiation region PR2 can be adjusted using the adjustment mechanism 22.

  The control device 5 detects surface position information of the surface of the substrate P held on the substrate stage 6 by using the focus / leveling detection system 24. Based on the detection result of the focus / leveling detection system 24, the control device 5 drives the substrate stage 6, for example, and the normal shot area of the image plane of the first projection optical system PL 1 and the substrate P held on the substrate stage 6. The positional relationship with the NS surface (the positional relationship in the Z-axis, θX, and θY directions) can be adjusted. Further, the control device 5 drives the substrate stage 6 based on the detection result of the focus / leveling detection system 24, for example, and the image plane of the second projection optical system PL2 and the edge of the substrate P held on the substrate stage 6 The positional relationship with the surface of the shot area ES (the positional relationship regarding the Z axis, θX, and θY directions) can be adjusted. In the present embodiment, the depth of focus of the second projection optical system PL2 is deeper than the depth of focus of the first projection optical system PL1, and the control device 5 controls the normal shot region of the image plane of the first projection optical system PL1 and the substrate P. By adjusting the positional relationship with NS, the image plane of the second projection optical system PL2 and the edge shot area ES of the substrate P can be brought into a desired positional relationship.

  Further, by providing an imaging characteristic adjusting device capable of adjusting the optical characteristic (imaging characteristic) of the first projection optical system PL1, the image plane of the first projection optical system PL1 can be adjusted using the imaging characteristic adjusting device. The positional relationship with the surface of the normal shot region NS of the substrate P can be adjusted. Further, by providing an imaging characteristic adjustment device capable of adjusting the optical characteristics (imaging characteristics) of the second projection optical system PL2, the image characteristics of the second projection optical system PL2 can be adjusted using the imaging characteristic adjustment device. The positional relationship with the surface of the edge shot region ES of the substrate P can be adjusted. The imaging characteristic adjusting device includes a drive mechanism that can move some optical elements of the first and second projection optical systems PL1 and PL2. Examples of the imaging characteristic adjusting device are disclosed in, for example, US Pat. No. 4,666,273, US Pat. No. 6,235,438, US Patent Publication No. 2005/0206850, and the like.

  The detection operation using the focus / leveling detection system 24 can be executed before the exposure operation of the substrate P is started. In that case, the control device 5 derives an approximate plane (mapping data) of the surface of the substrate P based on the detection result of the focus / leveling detection system 24, and based on the derived approximate plane, the first and second The substrate P is exposed while adjusting the positional relationship between the image planes of the two projection optical systems PL1 and PL2 and the surface of the substrate P.

  The detection operation using the focus / leveling detection system 24 can be executed in parallel with the exposure operation of the substrate P. In this case, the control device 5 adjusts the positional relationship between the image planes of the first and second projection optical systems PL1 and PL2 and the surface of the substrate P based on the detection result of the focus / leveling detection system 24. Expose P.

  The control device 5 starts an exposure operation for the normal shot area NS using the first optical unit 1 and an exposure operation for the edge shot area ES using the second optical unit 2. In the present embodiment, the control device 5 is parallel to at least a part of the exposure operation of exposing the normal shot region NS with the first exposure light L1 patterned by the first mask M1 irradiated to the first irradiation region PR1. Then, the edge shot region ES is exposed to the second exposure light L2 patterned by the second mask M2 irradiated to the second irradiation region PR2. The second optical unit 2 has a pattern substantially the same as the pattern density of the first mask M1 on the substrate P on which the normal shot region NS is exposed with the first exposure light L1 patterned by the first mask M1. The edge shot region ES is exposed with the second exposure light L2 patterned by the second mask M2 having a density.

  In the present embodiment, the control device 5 is disposed in the normal shot region NS while driving the substrate stage 6 and moving the substrate P in the Y-axis direction with respect to the first irradiation region PR1 and the second shot region PR2. The first irradiation region PR1 is irradiated with the first exposure light L1, and the second irradiation region PR2 disposed in the edge shot region ES is irradiated with the second exposure light L2. As a result, a pattern based on the first exposure light L1 is generated in the normal shot area NS, and a pattern based on the second exposure light L2 is generated in the edge shot area ES. The edge shot area ES of the substrate P is exposed with the second exposure light L2 patterned by the second mask M2 having a pattern density substantially the same as the pattern density of the first mask M1, and the edge shot area ES includes a normal shot area. A pattern having almost the same density as the pattern generated in NS is generated.

  In the present embodiment, the control device 5 includes a plurality of (four) second irradiation regions PR2 according to the normal shot region NS irradiated with the first exposure light L1 among the plurality of normal shot regions NS. The second irradiation region PR2 to be irradiated with the second exposure light L2 is selected, and the selected second irradiation region PR2 is irradiated with the second exposure light L2 to expose the edge shot region ES. The selected second irradiation region PR2 includes the second irradiation region PR2 arranged in the edge shot region ES.

  FIG. 8 is a diagram illustrating a state in which the first irradiation region PR1 is arranged in a predetermined normal shot region NS among the plurality of normal shot regions NS. As an example, FIG. 8 shows a state in which the first irradiation region PR1 is arranged in the thirtieth normal shot region NS30. As shown in FIG. 8, in this embodiment, the distances D1 and D3 are approximately three times the size WX, and the distances D2 and D4 are approximately three times the size WY.

  As shown in FIG. 8, for example, when the first irradiation region PR1 is arranged in the thirtieth normal shot region NS30, each of the second irradiation regions PR2 by the first to fourth exposure units 2A to 2D is a normal shot region. NS. In this case, the control device 5 stops the irradiation of the second exposure light L2 to the second irradiation region PR2 arranged in the normal shot region NS. Thereby, exposure of the normal shot region NS with the second exposure light L2 is suppressed.

  As shown in FIG. 9, for example, when the first irradiation region PR1 is arranged in the thirty-first normal shot region NS31, the second irradiation region PR2 by the first exposure unit 2A is arranged in the edge shot region ES, and the second The second irradiation region PR2 by the fourth exposure units 2B to 2D is arranged in the normal shot region NS. In this case, the control device 5 irradiates the second irradiation region PR2 by the first exposure unit 2A with the second exposure light L2, and applies the second exposure light L2 to the second irradiation region PR2 disposed in the normal shot region NS. Stop irradiation. Thereby, the edge shot region ES can be exposed with the second exposure light L2.

  As shown in FIG. 10, for example, when the first irradiation region PR1 is arranged in the eighteenth normal shot region NS18, the second irradiation region PR2 by the first and fourth exposure units 2A and 2D becomes the edge shot region ES. The second irradiation region PR2 by the second and third exposure units 2B and 2C is disposed in the normal shot region NS. In this case, the control device 5 irradiates the second irradiation region PR2 by the first and fourth exposure units 2A and 2D with the second exposure light L2, and performs the second irradiation on the second irradiation region PR2 arranged in the normal shot region NS. The irradiation of the two exposure light L2 is stopped. Thereby, the edge shot area ES different from the edge shot area ES exposed with the second exposure light L2 in FIG. 9 can be exposed with the second exposure light L2.

  As shown in FIG. 11, for example, when the first irradiation region PR1 is arranged in the twenty-eighth normal shot region NS28, the second irradiation region PR2 by the third exposure unit 2C is arranged in the edge shot region ES, and the first The second irradiation region PR2 by the second and fourth exposure units 2A, 2B, and 2D is disposed in the normal shot region NS. In this case, the control device 5 irradiates the second irradiation region PR2 by the third exposure unit 2C with the second exposure light L2, and applies the second exposure light L2 to the second irradiation region PR2 arranged in the normal shot region NS. Stop irradiation. Thereby, in FIG.9 and FIG.10, edge shot area | region ES different from edge shot area | region ES exposed with 2nd exposure light L2 can be exposed with 2nd exposure light L2.

  As shown in FIG. 12, for example, when the first irradiation region PR1 is arranged in the forty-second normal shot region NS42, the second irradiation region PR2 by the second exposure unit 2B is arranged in the edge shot region ES, and the first The second irradiation region PR2 by the fourth exposure units 2A and 2D is arranged in the normal shot region NS. In this case, the control device 5 irradiates the second irradiation region PR2 by the second exposure unit 2B with the second exposure light L2, and applies the second exposure light L2 to the second irradiation region PR2 arranged in the normal shot region NS. Stop irradiation. In the example shown in FIG. 12, the second irradiation region PR2 by the third exposure unit 2C is arranged outside the normal shot region NS and the edge shot region ES. In this case, the control device 5 can stop the irradiation of the second exposure light L2 on the second irradiation region PR2 by the third exposure unit 2C. Thereby, in FIG. 9, FIG. 10 and FIG. 11, the edge shot region ES different from the edge shot region ES exposed with the second exposure light L2 can be exposed with the second exposure light L2.

  As described above, by repeating the procedure described with reference to FIGS. 8 to 12, the plurality of normal shot areas NS are exposed with the first exposure light L1, and the plurality of edge shot areas ES are exposed with the second exposure light. Exposure is performed at L2.

  Further, when exposing each edge shot area ES, the control device 5 uses the adjustment mechanism 22 according to the size, position, and shape of each edge shot area ES, and the size of the second irradiation area PR2, The position and shape can be adjusted. The control device 5 can adjust the size, position, and shape of the second irradiation region PR2 by controlling the adjustment mechanism 22 so that the normal exposure region NS is not irradiated with the second exposure light L2.

  In this case, the normal shot region NS and the edge shot region ES are exposed by moving the substrate P in the Y-axis direction with respect to the first irradiation region PR1 and the second irradiation region PR2, but the substrate is almost stationary. The normal irradiation region NS and the edge shot region ES may be exposed by moving the first irradiation region PR1 and the second irradiation region PR2 with respect to P in the Y-axis direction, or the first irradiation region PR1 and the second irradiation region. Both PR2 and the substrate P may be moved.

  After the exposure of the normal shot area NS and the edge shot area ES is completed, the control device 5 unloads the substrate P from the substrate stage 6 using a predetermined transport system. The substrate P unloaded from the substrate stage 6 is transferred to an apparatus different from the exposure apparatus EX, and various process processes are executed.

  After the substrate P is exposed, various processes such as a development process, an etching process, and a CMP process are performed on the exposed substrate P. The edge shot area ES does not function as a product, but when a pattern is generated in the normal shot area NS and a pattern is not generated in the edge shot area ES, a pattern is generated between the normal shot area NS and the edge shot area ES. There is a possibility that a large level difference will occur. Then, for example, when the CMP process is executed, a so-called one-sided phenomenon occurs, and there is a possibility that the CMP process cannot be uniformly performed on the surface of the substrate P, and a defective chip may be generated. In addition, when a pattern is generated in the normal shot area NS and a pattern is not generated in the edge shot area ES, there is a possibility that development processing, etching processing, etc. cannot be performed uniformly, and defective chips may be generated. There is sex.

  In the present embodiment, since the second optical unit 2 exposes the edge shot area ES, the occurrence of defective chips can be suppressed. Further, a second optical unit 2 is provided separately from the first optical unit 1 that exposes the normal shot area NS, and in parallel with the exposure of the normal shot area NS of the substrate P using the first optical unit 1, the second optical unit is provided. Since the exposure of the edge shot region ES of the substrate P using 2 is executed, it is possible to suppress the occurrence of defective chips while suppressing a decrease in throughput.

  In the present embodiment, a pattern having substantially the same density as the pattern generated in the normal shot area NS is generated in the edge shot area ES. The present inventor can suppress a decrease in uniformity of the development process, the etching process, the CMP process, and the like by generating a pattern having almost the same density as the pattern generated in the normal shot area NS in the edge shot area ES. It was found that the generation of chips can be suppressed. Furthermore, even when the inventor has generated a pattern having a larger line width than the pattern generated in the normal shot area NS in the edge shot area ES, the inventor has determined the pattern density generated in the normal shot area NS and the edge shot area ES. It has been found that by making the pattern density generated in the same substantially the same, it is possible to suppress a decrease in uniformity of development processing, etching processing, CMP processing, and the like.

  According to the knowledge of the present inventor, even when the line width of the pattern generated in the normal shot region NS is about 65 nm, for example, and the line width of the pattern generated in the edge shot region ES is about 500 nm, for example, the normal shot It has been found that by making the pattern density of the region NS and the edge shot region ES substantially the same, it is possible to suppress a decrease in uniformity such as development processing, etching processing, and CMP processing.

  Therefore, even if the pattern generation accuracy (exposure accuracy) for the edge shot region ES is lower than the pattern generation accuracy (exposure accuracy) for the normal shot region NS, it is possible to suppress a decrease in uniformity of development processing, etching processing, CMP processing, and the like. The occurrence of defective chips can be suppressed. That is, even if the pattern generation accuracy of the second optical unit 2 is lower than the pattern generation accuracy of the first optical unit 1, the pattern density of the normal shot region NS and the pattern density of the edge shot region ES are made substantially the same. The occurrence of defective chips can be suppressed. Further, since the pattern generation accuracy required for the second optical unit 2 is lower than the pattern generation accuracy required for the first optical unit 1, it is possible to suppress an increase in apparatus cost and manufacturing cost of the second optical unit 2. .

  As described above, according to the present embodiment, the second optical unit for exposing the edge shot region ES, which is different from the first optical unit 1 for exposing the normal shot region NS where the chip can be formed. 2 is provided, it is possible to satisfactorily form a device while suppressing a decrease in throughput.

  In addition, by generating a pattern with almost the same density as the pattern generated in the normal shot area NS in the edge shot area ES, the pattern generated in the normal shot area NS and the edge shot area ES have different line widths, for example. Even if the generated pattern is different, it is possible to suppress a decrease in uniformity such as a development process, an etching process, and a CMP process, and a device can be formed satisfactorily.

Second Embodiment
Next, a second embodiment will be described. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted. A characteristic part of this embodiment is that a movable device 32 is provided that holds a plurality of second masks M2 having at least different pattern densities.

  FIG. 13 is a schematic diagram illustrating an example of the first exposure unit 2Ab (or the second to fourth exposure units 2Bb to 2Db) according to the second embodiment. In FIG. 13, the first exposure unit 2Ab includes a movable moving device 32 that holds a plurality of second masks M2 having different pattern densities. The moving device 32 includes a holding member 33 that holds the plurality of second masks M <b> 2 and a driving device 34 that moves the holding member 33.

  FIG. 14 is a plan view showing a holding member 33 that holds a plurality of second masks M2. As shown in FIG. 14, in the present embodiment, the outer shape of the holding member 33 is circular. In the present embodiment, the holding member 33 holds four second masks M2. The four second masks M <b> 2 are arranged at substantially equal intervals around the center of the holding member 33. Each of the second masks M2 has a different pattern density.

  The drive device 34 rotates the holding member 33 in the XY plane. By rotating the holding member 33, one second mask M2 among the plurality of second masks M2 is arranged at the irradiation position of the second exposure light L2 emitted from the second illumination system IL2. The control device 5 replaces the second mask M2 with respect to the irradiation position of the second exposure light L2 in accordance with the pattern generated in the normal shot area NS. The control device 5 includes a plurality of second masks M2 held by the holding member 33 so that a pattern having substantially the same density as the pattern generated in the normal shot area NS is generated in the edge shot area ES. A predetermined second mask M2 is selected, and the holding member 33 is rotated using the driving device 34 so that the selected second mask M2 is disposed at the irradiation position of the second exposure light L2.

  As shown in FIG. 15, the outer shape of the holding member 33B may be a rectangle in the XY plane. The holding member 33B shown in FIG. 15 holds the second mask M2 so that a plurality of the second masks M2 are arranged in the X-axis direction. The holding member 33B is movable in the X-axis direction with respect to the irradiation position of the second exposure light L2 emitted from the second illumination system IL2 by a predetermined driving device (not shown). The control device 5 includes a plurality of second masks M2 held by the holding member 33B so that a pattern having substantially the same density as the pattern generated in the normal shot region NS is generated in the edge shot region ES. A predetermined second mask M2 is selected, and the holding member 33B is moved so that the selected second mask M2 is disposed at the irradiation position of the second exposure light L2.

  Also in the present embodiment, the pattern generated in the edge shot area ES can be changed according to the pattern generated in the normal shot area NS.

  In each of the above-described embodiments, the first optical unit 1 is a scanning exposure method in which the normal shot region NS is exposed with the first exposure light L1 by relatively moving the substrate P and the first irradiation region PR1. In addition to the (step-and-scan method), a batch exposure method in which the normal shot region NS is exposed with the patterned first exposure light L1 while the substrate P is substantially stationary, and the substrate P is sequentially stepped ( Step-and-repeat method) may be used. The second optical unit 2 also exposes the edge shot area ES with the patterned second exposure light L2 while the substrate P is substantially stationary, and sequentially moves the substrate P stepwise (step-and-step). (Repeat method). Further, in the second optical unit 2, the edge shot region ES may be exposed by moving only the substrate P while the second mask M <b> 2 is substantially stationary without moving. In this case, for example, a pattern (such as a one-dimensional line and space pattern) periodically arranged in a direction (X-axis direction) orthogonal to the moving direction (Y-axis direction) of the substrate P is formed on the second mask M2. Alternatively, the pattern may be transferred to the edge shot area ES.

  Further, in the exposure of the collective exposure method, the first pattern and the substrate P are substantially stationary, and the first pattern is formed using the projection optical system (first projection optical system PL1, second projection optical system PL2). After the reduced image is transferred onto the substrate P, the reduced image of the second pattern is partially overlapped with the first pattern using the projection optical system in a state where the second pattern and the substrate P are substantially stationary. The substrate P may be subjected to batch exposure (stitch type batch exposure apparatus). Further, the stitch type exposure apparatus may be a step-and-stitch type in which at least two patterns are partially overlapped and transferred on the substrate P, and the substrate P is sequentially moved.

  Further, at least one of the first optical unit 1 and the second optical unit 2 may project a pattern of two masks as disclosed in, for example, US Pat. No. 6,611,316 (first projection optical system PL1). , Synthesized on the substrate P via the second projection optical system PL2), and double-exposure of one shot area (normal shot area NS, edge shot area ES) of the substrate P almost simultaneously by one scanning exposure. It may be. Further, at least one of the first optical unit 1 and the second optical unit 2 may be a proximity type exposure apparatus, a mirror projection aligner, or the like.

  In each of the above-described embodiments, the first and second masks M1 and M2 are transmissive masks in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmissive substrate. Instead of this mask, for example, as disclosed in US Pat. No. 6,778,257, a variable shaped mask (electronic) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. A mask, an active mask, or an image generator) may be used. The variable shaping mask includes, for example, a DMD (Digital Micro-mirror Device) which is a kind of non-light emitting image display element (spatial light modulator). The variable shaping mask is not limited to DMD, and a non-light emitting image display element described below may be used instead of DMD. Here, the non-light-emitting image display element is an element that spatially modulates the amplitude (intensity), phase, or polarization state of light traveling in a predetermined direction, and a transmissive liquid crystal modulator is a transmissive liquid crystal modulator. An electrochromic display (ECD) etc. are mentioned as an example other than a display element (LCD: Liquid Crystal Display). In addition to the DMD described above, the reflective spatial light modulator includes a reflective mirror array, a reflective liquid crystal display element, an electrophoretic display (EPD), electronic paper (or electronic ink), and a light diffraction type. An example is a light valve (Grating Light Valve).

  The second optical unit 2 uses a variable shaping mask to change the pattern (pattern density) generated in the edge shot area ES, thereby changing the pattern having the same density as the pattern generated in the normal shot area NS to the edge. It can be smoothly generated in the shot area ES.

  Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element. In this case, an illumination system is unnecessary. Here, as a self-luminous image display element, for example, CRT (Cathode Ray Tube), inorganic EL display, organic EL display (OLED: Organic Light Emitting Diode), LED display, LD display, field emission display (FED: Field Emission) Display), plasma display (PDP: Plasma Display Panel), and the like. Further, as a self-luminous image display element provided in the pattern forming apparatus, a solid light source chip having a plurality of light emitting points, a solid light source chip array in which a plurality of chips are arranged in an array, or a plurality of light emitting points on a single substrate A built-in type or the like may be used to form a pattern by electrically controlling the solid-state light source chip. The solid light source element may be inorganic or organic.

  Further, at least one of the first optical unit 1 and the second optical unit 2 is formed on the substrate P by forming interference fringes on the substrate P as disclosed in, for example, International Publication No. 2001/035168. A method of generating a line and space pattern may be used.

  FIG. 16 is a diagram illustrating an example of the second optical unit 2F that exposes the edge shot region ES using interference fringes. In FIG. 16A, a unipolar illumination stop 71 having one opening at a position shifted from the optical axis is disposed downstream of the optical path of the light source 70 of the second illumination system IL2. The light beam emitted from the light source 70 passes through the opening of the unipolar illumination stop 71, then passes through the lens system 73, and is incident obliquely on the L / S pattern 52 of the second mask M2. Of the 0th order light and ± 1st order light diffracted by the L / S pattern 52 of the second mask M2, only the 0th order light and the + 1st order light (or -1st order light) are incident on the second projection optical system PL2. The edge shot area ES of the substrate P is exposed by a two-beam interference method based on 0th order light and + 1st order light (−1st order light). Alternatively, as shown in FIG. 16B, exposure can be performed using a bipolar illumination stop 72 having two openings at positions shifted from the optical axis. Alternatively, a quadrupole illumination stop having four openings may be used. The illumination condition may be changed not only by changing the aperture but also by using a zoom optical system or a diffractive optical element in combination.

  FIG. 17 is a diagram illustrating an example of the second optical unit 2G that exposes the edge shot region ES using interference fringes. In FIG. 17, a first lens system 81 including a collimator lens and a half beam that splits a light beam that has passed through the first lens system 81 into two light beams downstream of the light source 80 capable of emitting coherent light such as laser light. A mirror 82, a second lens system 83, and an aperture stop 85 are provided. The light beam emitted from the light source 80 passes through the first lens system 81, and then is split into two light beams by the half mirror 82. The two light beams enter the second projection optical system PL2 via the second lens system 83. In the edge shot region ES of the substrate P, an interference fringe pattern is formed by a two-beam interference method based on two light beams. Thus, the edge shot area ES can be exposed without using the pattern (second mask M2).

  In each of the embodiments described above, one chip is arranged in one normal shot area NS. However, as shown in FIG. 18, a plurality of chips are formed in one normal shot area NS. May be. The number of chips may be different in the plurality of normal shot areas NS. For example, one chip having the first size is formed in the first normal shot region NS, and a chip having a second size smaller than the first size is formed in the second normal shot region NS. For example, four may be formed. Further, the sizes of the chips formed may be different from each other. Also in the case shown in FIG. 18, the second optical unit 2 exposes the region of the substrate P where the chip is not formed with the second exposure light L2.

  In each of the above-described embodiments, the second irradiation region PR2 by the first and third exposure units 2A and 2C arranged on both sides of the first irradiation region PR1 with respect to the X-axis direction is the first irradiation with respect to the Y-axis direction. The second irradiation region PR2 by the second and fourth exposure units 2B and 2D disposed on both sides of the first irradiation region PR1 in the Y-axis direction is substantially the same position as the region PR1, and the first irradiation in the X-axis direction. The position is substantially the same as that of the region PR1, but at least one second irradiation region PR2 of the plurality of second irradiation regions PR2 is different in position from the first illumination region PR1 in both the X-axis direction and the Y-axis direction. It may be. For example, as shown in FIG. 19, the position of the second irradiation region PR2 by the third exposure unit 2C may be different from the first illumination region PR1 in both the X-axis direction and the Y-axis direction. In the example shown in FIG. 19, the distance D3X in the X-axis direction between the first irradiation region PR1 and the second irradiation region PR2 by the third exposure unit 2C is almost an integral multiple of the size WX in the normal shot region NS in the X-axis direction. The distance D3Y with respect to the Y-axis direction is substantially an integer multiple of the size WY with respect to the Y-axis direction of the normal shot area NS. Further, not only the second irradiation region PR2 by the third exposure unit 2C but also the second irradiation region PR2 by the other exposure units 2A, 2B, and 2D is different from the first illumination region PR1 in both the X-axis direction and the Y-axis direction. The position may be different.

  In each of the above-described embodiments, the case where the distance D1 and the distance D3 are substantially the same and the distance D2 and the distance D4 are substantially the same has been described as an example. However, for example, as illustrated in FIG. The distance D1 and the distance D3 may be different. Similarly, the distance D2 and the distance D4 may be different. In this case as well, the distances D1 and D3 are approximately integer multiples of the size WX, and the distances D2 and D4 are approximately integer multiples of the size WY.

  In the present embodiment, the case where four second irradiation regions PR2 are arranged around the first irradiation region PR1 has been described as an example. However, as shown in FIG. 21, for example, the second irradiation region PR2 There may be two. FIG. 21 shows an example in which the second irradiation region PR2 is disposed on both sides of the first irradiation region PR1 with respect to the X-axis direction. Further, the second irradiation region PR2 may be arranged on both sides of the first irradiation region PR1 with respect to the Y-axis direction. Further, as shown in FIG. 22, there may be one second irradiation region PR2. Further, the second irradiation region PR2 may be three, or may be a plurality of five or more.

  In each of the above-described embodiments, the case where the second optical unit 2 exposes the edge shot region ES between the normal shot region NS and the edge of the substrate P with the second exposure light L2 has been described as an example. However, for example, when an area where no chip is formed is set in a part of the effective exposure range near the center of the surface of the substrate P, the second optical unit 2 is configured to have a part of the effective exposure range. The region can be exposed with the second exposure light L2.

  In each of the above-described embodiments, the edge shot area ES is smaller than the normal shot area NS, but the second optical unit 2 has its edge even when larger than the normal shot area NS (when a chip can be arranged). By exposing the shot area ES with the second exposure light L2, the generation of defective chips can be suppressed.

  In each of the above-described embodiments, the light sources of the first optical unit 1 and the second optical unit 2 may be combined with one light source (here, ArF excimer laser device).

  In each of the above-described embodiments, the case where the first and second exposure lights L1 and L2 are ArF excimer laser light has been described as an example. For example, bright lines emitted from a mercury lamp (g-line, h Other wavelengths, such as KrF excimer laser light (wavelength 248 nm). Further, the wavelength of the first exposure light L1 and the wavelength of the second exposure light L2 may be different as long as a pattern can be generated on the photosensitive film Rg with a desired accuracy.

  In each of the above-described embodiments, at least one of the first optical unit 1 and the second optical unit 2 is exposed with exposure light via a liquid as disclosed in, for example, WO 99/49504. An immersion exposure method in which the substrate is exposed may be used.

  As the substrate P in each of the above embodiments, not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, US Pat. No. 6,341,007, US Pat. No. 6,400,441, US Pat. No. 6,549,269, US Pat. No. 6,590,634, US Pat. No. 6,208,407, and US Pat. The present invention can also be applied to a twin stage type exposure apparatus having a plurality of substrate stages as disclosed in the specification of Japanese Patent No. 6262796.

  Further, as disclosed in US Pat. No. 6,897,963, European Patent Application No. 1713113, etc., a substrate stage for holding a substrate, a reference member on which a reference mark is formed, and / or various photoelectric devices. The present invention can also be applied to an exposure apparatus that includes a measurement stage equipped with a sensor. An exposure apparatus including a plurality of substrate stages and measurement stages can be employed.

  The type of the exposure apparatus is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P. An exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD) It can be widely applied to an exposure apparatus for manufacturing a micromachine, a MEMS, a DNA chip, a reticle, a mask, or the like.

  In each of the above-described embodiments, each position information of each stage is measured using an interferometer system including a laser interferometer. However, the present invention is not limited to this. For example, a scale (diffraction grating) provided in each stage. ) May be used. In this case, it is preferable that a hybrid system including both the interferometer system and the encoder system is used, and the measurement result of the encoder system is calibrated using the measurement result of the interferometer system. Further, the position of the stage may be controlled by switching between the interferometer system and the encoder system or using both.

  In each of the above-described embodiments, an ArF excimer laser may be used as a light source device that generates ArF excimer laser light as exposure light EL. For example, as disclosed in US Pat. No. 7,023,610, A harmonic generator that outputs pulsed light having a wavelength of 193 nm may be used, including a solid-state laser light source such as a DFB semiconductor laser or a fiber laser, an optical amplification unit having a fiber amplifier, a wavelength conversion unit, and the like. Furthermore, in the above-described embodiment, each illumination area and the irradiation area (projection area) described above are rectangular, but other shapes such as an arc shape may be used.

  As described above, the exposure apparatus according to the present embodiment assembles various subsystems including the constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 23, a microdevice such as a semiconductor device includes a step 201 for performing a function / performance design of the microdevice, a step 202 for manufacturing a mask (reticle) based on the design step, and a substrate as a base material of the device. Substrate processing step 204 including substrate processing (exposure processing) including exposing the substrate with exposure light using a mask pattern and developing the exposed substrate according to the above-described embodiment. The device is manufactured through a device assembly step (including processing processes such as a dicing process, a bonding process, and a package process) 205, an inspection step 206, and the like. The cleaning operation of the above-described embodiment is included in the substrate processing step 204.

  Note that the requirements of the above-described embodiments can be combined as appropriate. In addition, the disclosures of all published publications and US patents related to the exposure apparatus and the like cited in the above-described embodiments and modifications are incorporated herein by reference.

It is a schematic block diagram which shows an example of the exposure apparatus which concerns on 1st Embodiment. It is a figure for demonstrating a normal shot area | region and an edge shot area | region. It is the figure which expanded a part of FIG. It is a perspective view which shows an example of the 2nd optical unit which concerns on 1st Embodiment. It is a schematic block diagram which shows a part of 2nd optical unit which concerns on 1st Embodiment. It is a schematic diagram for demonstrating the relationship between the pattern density of a mask, and a pattern. It is a schematic diagram for demonstrating the positional relationship of a 1st irradiation area | region and a 2nd irradiation area | region. It is a schematic diagram for demonstrating an example of the exposure method which concerns on 1st Embodiment. It is a schematic diagram for demonstrating an example of the exposure method which concerns on 1st Embodiment. It is a schematic diagram for demonstrating an example of the exposure method which concerns on 1st Embodiment. It is a schematic diagram for demonstrating an example of the exposure method which concerns on 1st Embodiment. It is a schematic diagram for demonstrating an example of the exposure method which concerns on 1st Embodiment. It is a schematic diagram which shows an example of the 2nd optical unit which concerns on 2nd Embodiment. It is a figure which shows a part of 2nd optical unit which concerns on 2nd Embodiment. It is a figure which shows an example of the 2nd optical unit which concerns on 2nd Embodiment. It is a schematic diagram which shows an example of a 2nd optical unit. It is a schematic diagram which shows an example of a 2nd optical unit. It is a figure for demonstrating a normal shot area | region and an edge shot area | region. It is a schematic diagram for demonstrating the positional relationship of a 1st irradiation area | region and a 2nd irradiation area | region. It is a schematic diagram for demonstrating the positional relationship of a 1st irradiation area | region and a 2nd irradiation area | region. It is a schematic diagram for demonstrating the positional relationship of a 1st irradiation area | region and a 2nd irradiation area | region. It is a schematic diagram for demonstrating the positional relationship of a 1st irradiation area | region and a 2nd irradiation area | region. It is a flowchart figure which shows an example of the manufacturing process of a microdevice.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... 1st optical unit, 2 ... 2nd optical unit, 6 ... Substrate stage, 6D ... Drive system, 7 ... Ejection part, 9 ... Ejection part, 13 ... 1st mask stage, 16 ... 1st termination | terminus optical element, 17 Alignment system 20 Second mask stage 22 Adjustment mechanism 23 Second terminal optical element 24 Focus / leveling detection system 26 Drive system 27 Transport system 33 Holding member 34 Drive Apparatus, ES ... edge shot region, EX ... exposure apparatus, IL1 ... first illumination system, IL2 ... second illumination system, L1 ... first exposure light, L2 ... second exposure light, M1 ... first mask, M2 ... first 2 masks, NS ... normal shot region, P ... substrate, PL1 ... first projection optical system, PL2 ... second projection optical system, PR1 ... first irradiation region, PR2 ... second irradiation region

Claims (49)

An exposure apparatus for exposing a substrate,
A first optical unit that irradiates the first irradiation region with the patterned first exposure light;
A second optical unit capable of irradiating the substrate with the second exposure light patterned simultaneously with the first exposure light and setting a second irradiation region at a position different from the first irradiation region;
A second shot region where the chip is not formed on the substrate is exposed to the second exposure in parallel with the operation of exposing the first shot region where the chip constituting the device can be formed on the substrate with the first exposure light. An exposure device that exposes with light. The first optical unit includes a first optical member that emits the first exposure light,
The second optical unit includes a second optical member that emits the second exposure light,
The exposure apparatus according to claim 1, wherein the second optical member can face at least a part of the substrate disposed at a position facing the first optical member. The second irradiation region is disposed on at least one side of the first irradiation region with respect to a first direction in a predetermined plane substantially parallel to the surface of the substrate,
3. The exposure apparatus according to claim 1, wherein a distance between the first irradiation region and the second irradiation region in the first direction is substantially an integer multiple of a size of the first shot region in the first direction. The second irradiation region is disposed on at least one side of the first irradiation region with respect to a second direction orthogonal to the first direction within the predetermined plane,
The exposure apparatus according to claim 3, wherein a distance between the first irradiation region and the second irradiation region in the second direction is substantially an integer multiple of a size of the first shot region in the second direction.   The exposure apparatus according to any one of claims 1 to 4, wherein a plurality of the second irradiation areas can be arranged around the first irradiation area.   The second irradiation region includes the first irradiation region on both sides of the first irradiation region with respect to a first direction in a predetermined plane substantially parallel to the surface of the substrate, and the second direction orthogonal to the first direction within the predetermined plane. The exposure apparatus according to claim 1, wherein the exposure apparatus can be arranged on both sides of one irradiation region.   The exposure apparatus according to claim 1, wherein the second optical unit is capable of simultaneously irradiating the second exposure light to each of a plurality of second irradiation regions having different positions on the substrate.   The first shot region is scanned and exposed with the first exposure light by relatively moving the substrate and the first irradiation region in a first direction within a predetermined plane substantially parallel to the surface of the substrate. The exposure apparatus according to claim 7.   The exposure operation of the second shot area includes scanning and exposing the second shot area with the second exposure light by relatively moving the substrate and the second irradiation area with respect to the first direction. 8. The exposure apparatus according to 8.   The exposure apparatus according to claim 8 or 9, wherein the second irradiation region has a slit shape with a second direction orthogonal to the first direction as a longitudinal direction within the predetermined plane.   The exposure apparatus according to any one of claims 8 to 10, wherein the position of the second irradiation region is different from that of the first irradiation region in at least a second direction orthogonal to the first direction within the predetermined plane.   The exposure apparatus according to any one of claims 8 to 11, wherein the second irradiation area is different in position from the first irradiation area in at least the first direction.   A plurality of the second irradiation regions are arranged around the first irradiation region, and the plurality of second irradiation regions are at least a second irradiation region having a position different from the first irradiation region with respect to at least the first direction, and at least The exposure apparatus according to any one of claims 8 to 12, further comprising a second irradiation area having a position different from that of the first irradiation area in a second direction orthogonal to the first direction within the predetermined plane.   The second irradiation region has a position different from the first irradiation region with respect to at least one of the first direction and a second direction orthogonal to the first direction within the predetermined plane, and the at least one direction The exposure apparatus according to any one of claims 8 to 13, wherein a distance from the first irradiation region is substantially an integer multiple of a size of the first shot region.   The exposure apparatus according to claim 1, further comprising a first adjustment device that adjusts at least one of a position and a size of the second irradiation region.   The said 2nd optical unit changes the pattern produced | generated in the said 2nd shot area | region according to the pattern produced | generated in the said 1st shot area | region by the said 1st optical unit. Exposure equipment.   The exposure apparatus according to claim 1, wherein the second optical unit is capable of changing at least a density of a pattern generated in the second shot region.   The said 2nd optical unit produces | generates the pattern of the same density as the pattern produced | generated in the said 1st shot area | region by the said 1st optical unit in the said 2nd shot area | region. Exposure device.   The exposure apparatus according to claim 1, wherein the second optical unit patterns the second exposure light with a mask.   The exposure apparatus according to claim 19, wherein the second optical unit includes a projection optical system that projects an image of the mask onto the substrate.   21. The exposure apparatus according to claim 20, further comprising a second adjustment device that adjusts a positional relationship between an image plane of the projection optical system and a surface of the substrate.   The exposure apparatus according to any one of claims 1 to 21, further comprising a third adjustment device that adjusts a positional relationship between the first irradiation region and the second irradiation region. The first optical unit patterns the first exposure light with a first mask,
23. The exposure apparatus according to claim 1, wherein the second optical unit patterns the second exposure light with a second mask having a pattern density substantially the same as the pattern density of the first mask.   The exposure apparatus according to claim 23, further comprising an exchange device for exchanging the second mask in accordance with a pattern generated in the first shot area.   25. The exposure apparatus according to claim 24, wherein the exchange device includes a movable device that holds and moves a plurality of second masks having different pattern densities.   The exchange device includes: a mask holding device that can attach and remove the second mask; and a transfer device that carries in the second mask into the mask holding device and carries out the second mask from the mask holding device. Item 25. The exposure apparatus according to Item 24.   27. The exposure apparatus according to any one of claims 23 to 26, wherein the second optical unit includes an illumination device that exposes the second mask with the second exposure light.   The said 2nd optical unit produces | generates the pattern whose line | wire width is thicker than the pattern produced | generated in the said 1st shot area | region by the said 1st optical unit in any one of Claims 1-27. Exposure equipment.   The exposure apparatus according to any one of claims 1 to 28, wherein the second shot region is positioned between the first shot region and an edge of the substrate on the substrate and is not irradiated with the first exposure light. .   The first exposure light between the first shot region and the edge of the substrate is not irradiated on the substrate on which the exposure operation of the plurality of first shot regions is performed with the patterned first exposure light. An exposure apparatus that exposes a two-shot region with patterned second exposure light.   The first exposure light between the first shot area and the edge of the substrate on the substrate on which the exposure operation of the plurality of first shot areas is performed with the first exposure light patterned by the first mask An exposure apparatus that exposes a second shot region that is not irradiated with second exposure light patterned by a second mask having a pattern density substantially the same as the pattern density of the first mask.   A second shot area outside an effective exposure range in which the plurality of first shot areas are set on a substrate on which the exposure operation of the plurality of first shot areas is performed with the patterned first exposure light, An exposure apparatus that performs exposure with a patterned second exposure light having at least a variable density.   A second shot outside the effective exposure range on the substrate in parallel with at least a part of an exposure operation for exposing a plurality of first shot regions within the effective exposure range of the substrate with the patterned first exposure light. An exposure apparatus that performs an operation of exposing a region with patterned second exposure light.   34. The exposure apparatus according to claim 30, wherein a chip constituting a device is formed in the first shot area, and the chip is not formed in the second shot area.   35. The plurality of first shot areas are set within an effective exposure range of the substrate, and the plurality of second shot areas are set outside an effective exposure range of the substrate. Exposure equipment.   The exposure apparatus according to claim 1, wherein a plurality of the chips are formed in the first shot area.   37. The exposure apparatus according to claim 36, wherein the first shot area includes first shot areas having different numbers of chips.   The exposure apparatus according to any one of claims 1 to 37, wherein a wavelength of the first exposure light and a wavelength of the second exposure light are substantially the same.   The exposure apparatus according to any one of claims 1 to 38, wherein the second shot area is smaller than the first shot area.   40. The exposure apparatus according to any one of claims 1 to 39, wherein the chip cannot be arranged in the second shot area. Exposing the substrate using the exposure apparatus according to any one of claims 1 to 40;
Developing the exposed substrate; and a device manufacturing method. An exposure method for exposing a substrate,
Exposing a first shot area on which a chip constituting a device can be formed on the substrate with a patterned first exposure light applied to the first irradiation area;
In parallel with the exposure operation of the first shot area, a patterned second pattern is formed in which a second shot area where the chip is not formed on the substrate is irradiated to a second irradiation area having a position different from the first irradiation area. Exposing with two exposure light.   43. The exposure method according to claim 42, wherein a pattern having substantially the same density as the pattern generated in the first shot area is generated in the second shot area.   The first exposure light between the first shot region and the edge of the substrate is not irradiated on the substrate on which the exposure operation of the plurality of first shot regions is performed with the patterned first exposure light. An exposure method for exposing a two-shot region with patterned second exposure light.   The first exposure light between the first shot area and the edge of the substrate on the substrate on which the exposure operation of the plurality of first shot areas is performed with the first exposure light patterned by the first mask An exposure method of exposing a second shot region not irradiated with a second exposure light patterned by a second mask having a pattern density substantially the same as the pattern density of the first mask.   A second shot area outside an effective exposure range in which the plurality of first shot areas are set on a substrate on which the exposure operation of the plurality of first shot areas is performed with the patterned first exposure light, An exposure method in which exposure is performed with a patterned second exposure light having at least a variable density.   A second shot outside the effective exposure range on the substrate in parallel with at least a part of an exposure operation for exposing a plurality of first shot regions within the effective exposure range of the substrate with the patterned first exposure light. An exposure method for performing an operation of exposing a region with patterned second exposure light.   48. The exposure method according to any one of claims 44 to 47, wherein a chip constituting the device is formed in the first shot area, and the chip is not formed in the second shot area. Exposing the substrate using the exposure method of claims 42-48;
Developing the exposed substrate; and a device manufacturing method.

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