JP2009141930A - High frequency electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To allow reductions in size and cost of the transmission circuit by reducing the number of power amplifiers in a transmission circuit that processes a plurality of transmission signals. <P>SOLUTION: A high frequency electronic component 10 includes: an input terminal 10a that receives a transmission signal UMTS Tx in the form of an unbalanced signal; input terminals 10b1, 10b2 that receive a transmission signal GSM Tx in the form of a balanced signal; a balun 11 that converts the transmission signal GSM Tx in the form of the balanced signal received at the input terminals 10b1, 10b2 to a transmission signal GSM Tx in the form of an unbalanced signal and outputs this signal; and a switch 12. The switch 12 performs switching between signals received at input ports 12a, 12b, and outputs one of the signals from an output port 12c. The input port 12a receives the transmission signal UMTS Tx received at the input terminal 10a. The input port 12b receives the transmission signal GSM Tx in the form of an unbalanced signal outputted from the balun 11. The output port 12c is connected to a power amplifier 14. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a high-frequency electronic component used in a transmission circuit that processes a plurality of transmission signals.

  In recent years, mobile phones that can handle a plurality of frequency bands (multiband) have been put into practical use. On the other hand, third-generation mobile phones having a high-speed data communication function are also widespread. For this reason, mobile phones are required to support multimode (multiple systems) and multiband.

  For example, a multi-band mobile phone using a time division multiple access (hereinafter referred to as TDMA) system has been put into practical use. On the other hand, mobile phones using a wideband code division multiple access (hereinafter referred to as WCDMA) system have also been put into practical use. Therefore, in order to make it possible to use WCDMA communication while making use of the existing infrastructure (infrastructure) of TDMA, there is a need for multimode and multiband mobile phones having both types of communication functions. For example, in Europe, GSM (Global System for Mobile Communications) mobile phones that are TDMA systems are required to be able to perform UMTS (Universal Mobile Telecommunications System) system communications that are WCDMA systems.

  By the way, in a transmission circuit that processes a transmission signal in a wireless communication apparatus such as a mobile phone, a power amplifier that amplifies the transmission signal is an essential component. This power amplifier is more expensive than the electronic components constituting the transmission circuit.

  Conventionally, in a GSM multi-band mobile phone, one power amplifier has been shared in two bands (frequency bands) close to each other in frequency. However, in a multi-mode mobile phone having GSM and UMTS communication functions, a single power amplifier is not shared between the GSM and UMTS systems. Further, in a multimode and multiband compatible mobile phone having a communication function of one or more bands of the GSM system and a plurality of bands of the UMTS system, one power amplifier is shared by the plurality of bands of the UMTS system. It wasn't.

  Patent Document 1 describes a wireless communication apparatus having a multimode transmission circuit that selectively switches between a TDMA mode and a CDMA (Code Division Multiple Access) mode. Patent Document 1 describes a technique in which a switch is connected to the input end of one power amplifier, and a plurality of types of transmission signals are selectively input to the power amplifier using this switch.

  Patent Document 2 describes a high-frequency switch module having a switch circuit for switching between a transmission path and a reception path, a balun transformer circuit connected to the transmission path, and a balun transformer circuit connected to the reception path. .

Japanese Patent Laid-Open No. 2006-186556 JP 2003-143033 A

  By the way, in a mobile phone compatible with the GSM system and the UMTS system, the GSM transmission signal is generated in the form of a balanced signal mainly by an integrated circuit that modulates and demodulates the signal, and the UMTS transmission signal is not. Often generated in the form of a balanced signal. In such a mobile phone, a GSM transmission signal in the form of a balanced signal and a UMTS transmission signal in the form of an unbalanced signal are input to the transmission circuit. Conventionally, in this transmission circuit, a GSM transmission signal and a UMTS transmission signal have been amplified using separate power amplifiers. Therefore, such a transmission circuit requires a plurality of relatively expensive power amplifiers as described above, and as a result, there is a problem that miniaturization and cost reduction of the mobile phone are hindered.

  In the technique described in Patent Document 1, only a transmission signal in the form of an unbalanced signal is handled, and a transmission signal in the form of a balanced signal as described above and a transmission signal in the form of an unbalanced signal are mixed. The case is not considered.

  The present invention has been made in view of such problems, and an object thereof is a high-frequency electronic component used in a transmission circuit that processes a plurality of transmission signals, and the number of power amplifiers included in the transmission circuit is reduced. An object of the present invention is to provide a high-frequency electronic component that can reduce the size and cost of a transmission circuit.

  A first high-frequency electronic component of the present invention is used in a transmission circuit that processes a plurality of transmission signals, and includes a first input terminal to which a first transmission signal in the form of an unbalanced signal is input, A second input terminal to which a second transmission signal in the form of a balanced signal is input, and a second transmission signal in the form of a balanced signal input to the second input terminal are converted into a second input terminal in the form of an unbalanced signal. It has a balun that converts to a transmission signal and outputs it, and a switch. The switch has a first input port, a second input port, and an output port, and switches a signal input to the first and second input ports to output from the output port. A first transmission signal input to the first input terminal is input to the first input port, and a second transmission signal in the form of an unbalanced signal output from the balun is input to the second input port. Is done. The output port is connected to a power amplifier that amplifies the signal output from the output port.

  In the first high-frequency electronic component of the present invention, the second transmission signal in the form of a balanced signal input to the second input terminal is converted into the second transmission signal in the form of an unbalanced signal by the balun. Then, the switch switches the first transmission signal in the form of an unbalanced signal input to the first input terminal and the second transmission signal in the form of an unbalanced signal output from the balun from the output port. Output to the power amplifier.

  The first high-frequency electronic component of the present invention may further include a power amplifier, or may include a band-pass filter provided between the first input terminal and the first input port. .

  The first high-frequency electronic component of the present invention further includes a capacitor provided in at least one of signal paths connected to each of the first input port, the second input port, and the output port. It may be.

  The first high-frequency electronic component of the present invention further includes a laminated substrate including a plurality of laminated dielectric layers, and the balun is configured using a plurality of conductor layers provided in the laminated substrate, The switch may be mounted on the multilayer substrate.

  A second high-frequency electronic component of the present invention is used in a transmission circuit that processes a plurality of transmission signals, and includes a first input terminal to which a first transmission signal in the form of an unbalanced signal is input, A second input terminal to which a second transmission signal in the form of a balanced signal is input, and a first transmission signal in the form of an unbalanced signal input to the first input terminal are converted into a first in the form of a balanced signal. It has a balun that converts to a transmission signal and outputs it, and a switch. The switch has a first input port, a second input port, and an output port, and switches a signal input to the first and second input ports to output from the output port. The first transmission signal in the form of a balanced signal output from the balun is input to the first input port, and the second transmission signal input to the second input terminal is input to the second input port. The The output port is connected to a power amplifier that amplifies the signal output from the output port.

  In the second high-frequency electronic component of the present invention, the first transmission signal in the form of an unbalanced signal input to the first input terminal is converted into the first transmission signal in the form of a balanced signal by the balun. The switch switches between the first transmission signal in the form of a balanced signal output from the balun and the second transmission signal in the form of a balanced signal input to the second input terminal, and a power amplifier is provided from the output port. Is output for.

  The second high-frequency electronic component of the present invention may further include a power amplifier, or may include a band pass filter provided between the first input terminal and the balun.

  The second high-frequency electronic component of the present invention further includes a capacitor provided in at least one of the signal paths connected to each of the first input port, the second input port, and the output port. It may be.

  The second high-frequency electronic component of the present invention further includes a laminated substrate including a plurality of laminated dielectric layers, and the balun is configured using a plurality of conductor layers provided in the laminated substrate, The switch may be configured to be mounted on a multilayer substrate.

  In the first high-frequency electronic component of the present invention, the balun converts the second transmission signal in the form of a balanced signal input to the second input terminal into the second transmission signal in the form of an unbalanced signal, and the switch To switch between the first transmission signal in the form of an unbalanced signal input to the first input terminal and the second transmission signal in the form of an unbalanced signal output from the balun, and from the output port to the power amplifier Output. Thus, according to the first high-frequency electronic component of the present invention, in the transmission circuit that processes the transmission signal in the form of a balanced signal and the transmission signal in the form of an unbalanced signal, the number of power amplifiers included in the transmission circuit is reduced. As a result, the transmission circuit can be reduced in size and cost.

  In the second high frequency electronic component of the present invention, the balun converts the first transmission signal in the form of an unbalanced signal input to the first input terminal into the first transmission signal in the form of a balanced signal. The first transmission signal in the form of a balanced signal output from the balun and the second transmission signal in the form of a balanced signal input to the second input terminal are switched by the switch to the power amplifier from the output port. Output. Thus, according to the second high frequency electronic component of the present invention, in the transmission circuit that processes the transmission signal in the form of a balanced signal and the transmission signal in the form of an unbalanced signal, the number of power amplifiers included in the transmission circuit is reduced. As a result, the transmission circuit can be reduced in size and cost.

[First Embodiment]
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, an example of a high-frequency circuit of a cellular phone including a high-frequency electronic component according to the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a block diagram showing a circuit configuration of an example of the high-frequency circuit. This high-frequency circuit processes a GSM signal that is a TDMA method and a UMTS signal that is a WCDMA method.

  Here, GSM signal types are shown in Table 1, and UMTS signal types are shown in Table 2. In Tables 1 and 2, the “uplink” column represents the frequency band of the transmission signal, and the “downlink” column represents the frequency band of the reception signal.

  The high-frequency circuit shown in FIG. 1 includes an antenna 101, a switch 1, and an integrated circuit (hereinafter referred to as IC) 2. The switch 1 has four ports 1a, 1b, 1c, and 1d, and selectively connects the port 1a to any one of the ports 1b, 1c, and 1d. The port 1a is connected to the antenna 101.

  The IC 2 is a circuit that mainly modulates and demodulates signals. In the present embodiment, the IC 2 generates and outputs a UMTS transmission signal UMTS Tx and a GSM transmission signal GSM Tx. The transmission signal UMTS Tx output from the IC 2 is in the form of an unbalanced signal, and the transmission signal GSM Tx output from the IC 2 is in the form of a balanced signal. Further, the IC 2 receives a UMTS reception signal UMTS Rx and a GSM reception signal GSM Rx. The received signal UMTS Rx received by IC2 is in the form of an unbalanced signal, and the received signal GSM Rx received by IC2 is in the form of a balanced signal. IC2 has terminals 2a, 2b1, 2b2, 2c, 2d1, and 2d2. The transmission signal UMTS Tx is output from the terminal 2a, and the transmission signal GSM Tx is output from the terminals 2b1 and 2b2. The reception signal UMTS Rx is input to the terminal 2c, and the reception signal GSM Rx is input to the terminals 2d1 and 2d2.

  The transmission signal GSM Tx and the reception signal GSM Rx are a transmission signal and a reception signal in at least one of the GSM850 (AGSM) and GSM900 (EGSM) having a frequency band close to the four systems shown in Table 1, or It is a transmission signal and a reception signal in at least one of GSM1800 (DCS) and GSM1900 (PCS) having a close frequency band among the four systems shown. In this embodiment, when the transmission signal GSM Tx and the reception signal GSM Rx are transmission signals and reception signals in at least one of the GSM850 (AGSM) and GSM900 (EGSM), the transmission signal UMTS Tx and the reception signal UMTS Rx Is a transmission signal and a reception signal in any one of the bands V, VI, and VIII having a frequency band close to that of GSM850 (AGSM) and GSM900 (EGSM) among the 10 bands shown in Table 2. Further, when the transmission signal GSM Tx and the reception signal GSM Rx are transmission signals and reception signals in at least one of GSM1800 (DCS) and GSM1900 (PCS), the transmission signal UMTS Tx and the reception signal UMTS Rx are shown in Table 2. Among the 10 bands shown in FIG. 5, GSM1800 (DCS) and GSM1900 (PCS) are transmission signals and reception signals in any of bands I, II, III, IV, IX, and X that are close in frequency band.

  The high frequency circuit further includes a switch 3, a duplexer 4, band pass filters (hereinafter referred to as BPF) 5 and 6, a transmission circuit 7, and a low pass filter (hereinafter referred to as LPF) 8. Yes. The switch 3 has three ports 3a, 3b, and 3c, and selectively connects the port 3a to one of the ports 3b and 3c. The port 3c is connected to the port 1c of the switch 1 through the LPF 8.

  The duplexer 4 has first to third ports and two BPFs 4a and 4b. The first port is connected to the port 1 b of the switch 1. The BPF 4a is provided between the first port and the second port. The BPF 4b is provided between the first port and the third port. The second port of the duplexer 4 is connected to the terminal 2c of the IC 2 via the BPF 5. The third port of the duplexer 4 is connected to the port 3 b of the switch 3.

  The BPF 6 has one unbalanced input end and two balanced output ends. Two balanced output terminals of the BPF 6 are connected to terminals 2d1 and 2d2 of the IC2. The unbalanced input terminal of the BPF 6 is connected to the port 1 d of the switch 1.

  FIG. 2 shows a circuit configuration of the transmission circuit 7. The transmission circuit 7 processes a plurality of transmission signals, that is, the transmission signal UMTS Tx and the transmission signal GSM Tx. The transmission circuit 7 includes input terminals 7a, 7b1, and 7b2 and an output terminal 7c. The input terminal 7a is connected to the terminal 2a of the IC2. Input terminals 7b1 and 7b2 are connected to terminals 2b1 and 2b2 of IC2. The output terminal 7 c is connected to the port 3 a of the switch 3.

  The transmission circuit 7 includes a balun 11, a switch 12, a BPF 13, and a power amplifier 14. The balun 11 has two balanced input ends and one unbalanced output end. The two balanced input terminals of the balun 11 are connected to the input terminals 7 b 1 and 7 b 2 of the transmission circuit 7. The switch 12 has two input ports 12a and 12b and one output port 12c, and selectively connects the output port 12c to one of the input ports 12a and 12b. The unbalanced output terminal of the balun 11 is connected to the input port 12 b of the switch 12. The input port 12 a of the switch 12 is connected to the input terminal 7 a of the transmission circuit 7 via the BPF 13. The output port 12 c of the switch 12 is connected to the input terminal of the power amplifier 14. The output terminal of the power amplifier 14 is connected to the output terminal 7 c of the transmission circuit 7. The power amplifier 14 amplifies the signal output from the output port 12 c of the switch 12. The high frequency electronic component 10 according to the present embodiment is used in the transmission circuit 7 shown in FIG.

  The balun 11 may be configured by, for example, an LC circuit using an inductor and a capacitor, or may be configured using a resonator. The switch 12 may be configured by, for example, a monolithic microwave integrated circuit (hereinafter referred to as MMIC), or may be configured by using a PIN diode. The BPF 13 may be constituted by a surface acoustic wave element, for example. The power amplifier 14 may be configured by, for example, an MMIC.

  As shown in FIG. 1, the BPF 13 is provided in the signal path of the transmission signal UMTS Tx, whereas the BPF is not provided in the signal path of the transmission signal GSM Tx. The reason is as follows. In the TDMA system, the transmission signal and the reception signal are time-divisioned, but in the UMTS system, the transmission signal and the reception signal are not time-divisional. Therefore, the UMTS system requires very high isolation between the transmission signal and the reception signal. In order to achieve this high isolation, a BPF is usually provided between an IC that outputs a UMTS transmission signal and a power amplifier that amplifies the UMTS transmission signal. Therefore, also in the present embodiment, the BPF 13 is provided in the signal path of the transmission signal UMTS Tx between the IC 2 and the power amplifier 14. The LPF 8 provided in the signal path of the transmission signal GSM Tx between the port 3c of the switch 3 and the port 1c of the switch 1 is for suppressing the spurious signal of the multiplied wave with respect to the transmission signal generated by the power amplifier 14. It is.

  FIG. 3 is a circuit diagram showing a circuit configuration of the high-frequency electronic component 10. The high-frequency electronic component 10 includes input terminals 10a, 10b1, and 10b2, an output terminal 10c, the balun 11 and the switch 12 described above. The input terminal 10 a is connected to the output end of the BPF 13 and the input port 12 a of the switch 12. The input terminals 10b1 and 10b2 are connected to input terminals 7b1 and 7b2 of the transmission circuit 7. The input terminals 10 b 1 and 10 b 2 are connected to the two balanced input terminals of the balun 11. The output terminal 10 c is connected to the output port 12 c of the switch 12 and the input terminal of the power amplifier 14. The switch 12 has control terminals 12d and 12e to which control signals VC1 and VC2 for controlling the switch 12 are input.

  FIG. 3 shows an example in which the balun 11 is configured by an LC circuit using an inductor and a capacitor. In this example, the balun 11 has two inductors L1 and L2 and two capacitors C1 and C2. One end of the inductor L1 and one end of the capacitor C1 are connected to the unbalanced output terminal of the balun 11. The other end of the inductor L1 is connected to the balanced input terminal of the balun 11 connected to the input terminal 10b2, and is connected to the ground via the capacitor C2. The other end of the capacitor C1 is connected to the balanced input terminal of the balun 11 connected to the input terminal 10b1, and is connected to the ground via the inductor L2.

  In the example shown in FIG. 3, the high frequency electronic component 10 includes a capacitor C3 provided in a signal path between the input port 12b of the switch 12 and the unbalanced output terminal of the balun 11, and an output port 12c of the switch 12. And a capacitor C4 provided in a signal path between the output terminal 10c and the output terminal 10c. These capacitors C3 and C4 are for preventing the direct current caused by the control signals VC1 and VC2 from flowing through the signal path connected to the ports 12b and 12c. In the example shown in FIG. 3, no capacitor is provided in the signal path between the input port 12a of the switch 12 and the input terminal 10a. This is because the BPF 13 connected to the input terminal 10a has a function of blocking the passage of a direct current. When direct current due to the control signals VC1 and VC2 is generated from the input port 12a and the BPF 13 does not have a function of blocking the passage of the direct current or when the BPF 13 has low resistance to direct current. In the signal path between the input port 12a and the input terminal 10a of the switch 12, a capacitor for blocking the passage of a direct current may be provided. In the signal path connected to the port 12b and the signal path connected to the port 12c, if it is not necessary to block the passage of the direct current due to the control signals VC1 and VC2, the capacitor C3 or the capacitor C4 is provided. It does not have to be. Each signal path connected to the ports 12a, 12b, and 12c of the switch 12 is provided with a capacitor when it is necessary to block the passage of a direct current due to the control signals VC1 and VC2 in the signal path. Whether or not it is necessary to provide a capacitor in each signal path connected to the ports 12a, 12b, and 12c of the switch 12 will be described in detail later. In FIGS. 1 and 2, the capacitors C3 and C4 are not shown.

  The high frequency electronic component 30 according to the present embodiment corresponds to the first high frequency electronic component of the present invention. In the present embodiment, the transmission signal UMTS Tx in the form of an unbalanced signal corresponds to the first transmission signal in the first high-frequency electronic component of the present invention, and the transmission signal GSM Tx in the form of a balanced signal is the first of the present invention. This corresponds to the second transmission signal in one high-frequency electronic component. The input terminal 10a corresponds to the first input terminal in the first high-frequency electronic component of the present invention, and the input terminals 10b1 and 10b2 correspond to the second input terminal in the first high-frequency electronic component of the present invention. The balun 11 converts the transmission signal GSM Tx in the form of a balanced signal input to the input terminals 10b1 and 10b2 into a transmission signal GSM Tx in the form of an unbalanced signal and outputs it. A transmission signal UMTS Tx in the form of an unbalanced signal input to the input terminal 10a is input to the input port 12a of the switch 12. A transmission signal GSM Tx in the form of an unbalanced signal output from the balun 11 is input to the input port 12 b of the switch 12. The output port 12c of the switch 12 is connected to a power amplifier 14 that amplifies the signal output from the output port 12c.

  Next, the operation of the high frequency circuit including the high frequency electronic component 10 according to the present embodiment will be described. The IC 2 generates and outputs a transmission signal UMTS Tx in the form of an unbalanced signal and a transmission signal GSM Tx in the form of a balanced signal. The transmission signal UMTS Tx passes through the BPF 13 of the transmission circuit 7 and is input to the input port 12 a of the switch 12 of the high frequency electronic component 10. The transmission signal GSM Tx in the form of a balanced signal is converted into a transmission signal GSM Tx in the form of an unbalanced signal by the balun 11, and the transmission signal GSM Tx in the form of this unbalanced signal is input to the input port 12 b of the switch 12. . The switch 12 is connected to the transmission signal UMTS Tx in the form of an unbalanced signal input to the input port 12a and the unbalanced output from the balun 11 according to the state of the control signals VC1 and VC2 input to the control terminals 12d and 12e. The transmission signal GSM Tx in the form of a signal is switched and output to the power amplifier 14. The transmission signal input to the power amplifier 14 is amplified by the power amplifier 14 and input to the port 3 a of the switch 3.

  When transmitting the transmission signal UMTS Tx, the port 3a of the switch 3 is connected to the port 3b, and the port 1a of the switch 1 is connected to the port 1b. In this case, the transmission signal UMTS Tx is supplied to the antenna 101 through the switch 3, the BPF 4 b of the duplexer 4 and the switch 1 in this order, and is transmitted from the antenna 101.

  When transmitting the transmission signal GSM Tx, the port 3a of the switch 3 is connected to the port 3c, and the port 1a of the switch 1 is connected to the port 1c. In this case, the transmission signal GSM Tx passes through the switch 3, the LPF 8, and the switch 1 in order, is supplied to the antenna 101, and is transmitted from the antenna 101.

  In the high frequency circuit shown in FIG. 1, when the port 1a of the switch 1 is connected to the port 1b, the received signal UMTS Rx can be processed. In this state, the reception signal UMTS Rx received by the antenna 101 passes through the switch 1, the BPF 4 a and the BPF 5 of the duplexer 4 in order, and is input to the IC 2.

  In the high-frequency circuit shown in FIG. 1, when the port 1a of the switch 1 is connected to the port 1d, the received signal GSM Rx can be processed. In this state, the received signal GSM Rx received by the antenna 101 passes through the switch 1 and the BPF 6 in order and is input to the IC 2.

  In the high-frequency electronic component 10 according to the present embodiment, the balun 11 converts the transmission signal GSM Tx in the form of a balanced signal input to the input terminals 10b1 and 10b2 into the transmission signal GSM Tx in the form of an unbalanced signal, and the switch 12, the transmission signal UMTS Tx in the form of an unbalanced signal input to the input terminal 10a and the GSM Tx in the form of an unbalanced signal output from the balun 11 are switched and output to the power amplifier 14 from the output port 12a. To do. Thus, according to the present embodiment, in the transmission circuit 7 that processes the transmission signal GSM Tx in the form of a balanced signal and the transmission signal UMTS Tx in the form of an unbalanced signal, the number of power amplifiers included in the transmission circuit 7 As a result, the transmission circuit 7 can be reduced in size and cost.

  Next, the structure of the high frequency electronic component 10 according to the present embodiment will be described. FIG. 4 is a perspective view showing the appearance of the high-frequency electronic component 10. FIG. 5 is a plan view of the high-frequency wave electronic component 10. As shown in FIGS. 4 and 5, the high-frequency electronic component 10 includes a laminated substrate 20 that integrates the elements of the high-frequency electronic component 10. As will be described in detail later, the laminated substrate 20 includes a plurality of laminated dielectric layers. The laminated substrate 20 has a top surface 20a, a bottom surface 20b, and four side surfaces, and has a rectangular parallelepiped shape.

  A circuit in the high-frequency electronic component 10 is configured using a conductor layer provided in the multilayer substrate 20, the dielectric layer, and an element mounted on the upper surface 20 a of the multilayer substrate 20. Here, as an example, it is assumed that the switch 12 and the capacitors C3 and C4 are mounted on the upper surface 20a.

  Next, with reference to FIG. 6 thru | or FIG. 10, the dielectric material layer and conductor layer in the laminated substrate 20 are demonstrated in detail. 6A and 6B respectively show the top surfaces of the first and second dielectric layers from the top. 7A and 7B show the top surfaces of the third and fourth dielectric layers from the top, respectively. 8A and 8B respectively show the top surfaces of the fifth and sixth dielectric layers from the top. 9A and 9B respectively show the top surfaces of the seventh and eighth dielectric layers from the top. FIG. 10A shows the top surface of the ninth dielectric layer from the top. FIG. 10B shows the ninth dielectric layer from the top and the conductor layer therebelow as seen from above. 6 to 10, circles represent through holes.

  On the top surface of the first dielectric layer 21 shown in FIG. 6A, conductor layers 212A to 212G to which the switch 12 is connected, conductor layers 213A and 213B to which the capacitor C3 is connected, and a capacitor C4 are provided. Conductive layers 214A and 214B to be connected are formed. The conductor layer 212A is connected to the port 12a of the switch 12. The conductor layer 212C is connected to the port 12b of the switch 12. The conductor layer 212E is connected to the port 12c of the switch 12. The conductor layer 212F is connected to the control terminal 12d of the switch 12. The conductor layer 212D is connected to the control terminal 12e of the switch 12. The conductor layers 212B and 212G are connected to the ground of the switch 12. The dielectric layer 21 has a plurality of through holes connected to the conductor layers.

  Conductor layers 221, 222, 223, 224, 225, and 226 are formed on the upper surface of the second dielectric layer 22 shown in FIG. A conductor layer 212 </ b> A is connected to the conductor layer 221 through a through hole formed in the dielectric layer 21. A conductor layer 212 </ b> D is connected to the conductor layer 222 through a through hole formed in the dielectric layer 21. A conductor layer 212F is connected to the conductor layer 223 through a through hole formed in the dielectric layer 21. Conductive layers 212C and 213A are connected to the conductive layer 224 through through holes formed in the dielectric layer 21, respectively. A conductor layer 214 </ b> A is connected to the conductor layer 225 through a through hole formed in the dielectric layer 21. Conductive layers 212E and 214B are connected to the conductive layer 226 through through holes formed in the dielectric layer 21, respectively. The dielectric layer 22 is formed with through holes connected to the conductor layers 221, 222, 223, and 225, and a plurality of other through holes, respectively.

  A capacitor conductor layer 231 and a ground conductor layer 232 are formed on the top surface of the third dielectric layer 23 shown in FIG. The conductor layer 213B is connected to the conductor layer 231 through through holes formed in the dielectric layers 21 and 22. Conductive layers 212B and 212G are connected to the conductive layer 232 through through holes formed in the dielectric layers 21 and 22. The dielectric layer 23 has through holes connected to the conductor layers 231 and 232 and a plurality of other through holes, respectively.

  Capacitor conductor layers 241 and 242 and a conductor layer 243 are formed on the upper surface of the fourth dielectric layer 24 shown in FIG. 7B. The conductor layers 231 and 241 and the dielectric layer 23 arranged therebetween constitute the capacitor C1 in FIG. The conductor layers 232 and 242 and the dielectric layer 23 disposed therebetween constitute the capacitor C2 in FIG. A conductor layer 232 is connected to the conductor layer 243 through two through holes formed in the dielectric layer 23. The dielectric layer 24 has through holes connected to the conductor layers 241, 242, and 243, and a plurality of other through holes.

  Inductor conductor layers 251 and 252 and a conductor layer 253 are formed on the upper surface of the fifth dielectric layer 25 shown in FIG. A conductor layer 242 is connected to the conductor layer 251 through a through hole formed in the dielectric layer 24. The conductor layer 241 is connected to the conductor layer 252 through a through hole formed in the dielectric layer 24. The conductor layer 243 is connected to the conductor layer 253 through two through holes formed in the dielectric layer 24. The dielectric layer 25 has through holes connected to the conductor layers 251, 252, and 253, and a plurality of other through holes.

  Inductor conductor layers 261 and 262 and a conductor layer 263 are formed on the top surface of the sixth dielectric layer 26 shown in FIG. 8B. The conductor layer 251 is connected to the conductor layer 261 through a through hole formed in the dielectric layer 25. The conductor layer 252 is connected to the conductor layer 262 through a through hole formed in the dielectric layer 25. The conductor layer 263 is connected to the conductor layer 263 through two through holes formed in the dielectric layer 25. The dielectric layer 26 has through holes connected to the conductor layers 261, 262, and 263, and a plurality of other through holes.

  Inductor conductor layers 271 and 272 and a conductor layer 273 are formed on the top surface of the seventh dielectric layer 27 shown in FIG. The conductor layer 261 is connected to the conductor layer 271 through a through hole formed in the dielectric layer 26. The conductor layer 262 is connected to the conductor layer 272 through a through hole formed in the dielectric layer 26. The conductor layer 263 is connected to the conductor layer 273 through two through holes formed in the dielectric layer 26. The dielectric layer 27 is formed with through holes connected to the conductor layers 271, 272, and 273 and a plurality of other through holes.

  Inductor conductor layers 281 and 282 and a conductor layer 283 are formed on the top surface of the eighth dielectric layer 28 shown in FIG. 9B. The conductor layer 271 is connected to the conductor layer 281 through a through hole formed in the dielectric layer 27. The conductor layer 231 is connected to the conductor layer 281 through through holes formed in the dielectric layers 23 to 27. The conductor layer 272 is connected to the conductor layer 282 through a through hole formed in the dielectric layer 27. The conductor layer 273 is connected to the conductor layer 283 through two through holes formed in the dielectric layer 27. The dielectric layer 28 is formed with through holes connected to the conductor layers 282 and 283 and a plurality of other through holes, respectively.

  The inductor L1 shown in FIG. 3 includes conductor layers 251, 261, 271, 281 and through-holes connecting them in series. The inductor L2 shown in FIG. 3 includes conductor layers 252, 262, 272, and 282 and through holes that connect them in series.

  A ground conductor layer 291 is formed on the top surface of the ninth dielectric layer 29 shown in FIG. Conductive layers 282 and 283 are connected to the conductive layer 291 through through holes formed in the dielectric layer 28, respectively. In addition, a conductor layer 232 is connected to the conductor layer 291 through through holes formed in the dielectric layers 23 to 28. The dielectric layer 29 has a plurality of through holes connected to the conductor layer 291 and a plurality of other through holes.

  As shown in FIG. 10B, conductor layers 310a, 310b1, 310b2 constituting the input terminals 10a, 10b1, 10b2 and the output terminal 10c are formed on the lower surface of the dielectric layer 29, that is, the bottom surface 20b of the multilayer substrate 20. , Conductor layers 312d and 312e constituting the control terminals 12d and 12e, and conductor layers G1 to G11 constituting the ground terminal are formed.

  A conductor layer 212 </ b> A is connected to the conductor layer 310 a via through holes formed in the dielectric layers 21 to 29 and the conductor layer 221. The conductor layer 241 is connected to the conductor layer 310b1 through through holes formed in the dielectric layers 24-29. The conductor layer 242 is connected to the conductor layer 310b2 through through holes formed in the dielectric layers 24 to 29. The conductor layer 214 c is connected to the conductor layer 310 c via the through holes formed in the dielectric layers 21 to 29 and the conductor layer 225. A conductor layer 212F is connected to the conductor layer 312d through a through hole formed in the dielectric layers 21 to 29 and the conductor layer 223. The conductor layer 312e is connected to the conductor layer 212D through the through holes formed in the dielectric layers 21 to 29 and the conductor layer 222. A conductor layer 291 is connected to the conductor layers G1 to G11 through through holes formed in the dielectric layer 29. The conductor layers G1 to G11 are connected to the ground.

  The above-mentioned first to ninth dielectric layers 21 to 29 and the conductor layer are laminated to form the laminated substrate 20 shown in FIG. A switch 12 and capacitors C3 and C4 are mounted on the upper surface 20a of the multilayer substrate 20. The balun 11 is configured using a plurality of conductor layers provided in the multilayer substrate 20. In the present embodiment, as the laminated substrate 20, various materials such as a material using a resin, ceramic, or a composite material of both can be used as the material of the dielectric layer. However, as the laminated substrate 20, it is particularly preferable to use a low-temperature co-fired ceramic multilayer substrate having excellent high-frequency characteristics.

  Next, the effects of the present embodiment will be described in comparison with a comparative example. FIG. 11 is a block diagram illustrating a circuit configuration of a high-frequency circuit of a comparative example. The high-frequency circuit of this comparative example does not include the switches 3 and 12 in the high-frequency circuit shown in FIG. 1, but includes two power amplifiers 14A and 14B instead of the power amplifier 14 in the high-frequency circuit shown in FIG. Yes. In the high frequency circuit of the comparative example, the transmission signal UMTS Tx output from the BPF 13 is amplified by the power amplifier 14A and input to the BPF 4b of the duplexer 4. The transmission signal GSM Tx output from the balun 11 is amplified by the power amplifier 14B, passes through the LPF 8, and is input to the port 1c of the switch 1. In the high-frequency circuit of the comparative example, the balun 11, the BPF 13, and the power amplifiers 14A and 14B constitute a transmission circuit. Other configurations of the high-frequency circuit of the comparative example are the same as those of the high-frequency circuit shown in FIG.

  In the comparative example shown in FIG. 11, two relatively expensive power amplifiers are required, and as a result, miniaturization and cost reduction of the transmission circuit and the high-frequency circuit of the mobile phone including the transmission circuit are hindered. On the other hand, in the present embodiment, since the transmission signal UMTS Tx and the transmission signal GSM Tx share one power amplifier 14, the number of power amplifiers included in the transmission circuit 7 is one compared to the comparative example. As a result, the transmission circuit 7 and the high-frequency circuit of the mobile phone including the transmission circuit 7 can be reduced in size and cost. In this embodiment, the power amplifier can be reduced by one as compared with the comparative example, but two switches 3 and 12 are newly required. However, since the switch is less expensive than the power amplifier, the cost can be reduced in this embodiment compared to the comparative example.

  Further, as in the present embodiment, when one high-frequency electronic component 10 including the balun 11 and the switch 12 is configured, the balun 11 and the switch 12 are configured as separate elements, and these are mounted on the substrate. Compared to the above, the occupied area of the balun 11 and the switch 12 in the transmission circuit 7 can be reduced. Also from this point, according to the present embodiment, the transmission circuit 7 and the high-frequency circuit of the mobile phone including the transmission circuit 7 can be downsized.

  The high-frequency electronic component 10 according to the present embodiment includes a multilayer substrate 20, the balun 11 is configured using a plurality of conductor layers provided in the multilayer substrate 20, and the switch 12 is connected to the multilayer substrate 20. It is installed. As shown in FIGS. 6 to 10, the balun 11 can be easily configured using a plurality of conductor layers provided in the laminated substrate 20. Therefore, as in the present embodiment, the balun 11 is configured by using a plurality of conductor layers provided in the multilayer substrate 20, and the switch 12 is mounted on the multilayer substrate 20. The area occupied by the high-frequency electronic component 10 can be reduced. Therefore, according to the present embodiment, it is possible to further reduce the size of the transmission circuit 7 and the high-frequency circuit of the mobile phone including the transmission circuit 7.

  Here, the configuration of the switch 12 in the high-frequency electronic component 10 according to the present embodiment and the necessity of providing a capacitor in the signal path connected to the switch 12 will be described in detail. First, as the switch 12, a switch configured by an MMIC or a switch configured by using a PIN diode can be used. The switches configured by the MMIC include those using a depletion type field effect transistor (hereinafter referred to as FET) and those using an enhancement type FET. In the depletion type FET, the drain current flows even when the gate voltage is zero. In the enhancement type FET, no drain current flows when the gate voltage is zero. An example of a depletion type FET is a GaAs-based pHEMT (pseudomorphic high electron mobility transistor). As an enhancement type FET, for example, there is a CMOS (complementary metal oxide semiconductor).

  In the case of using a switch configured by an MMIC and using a depletion type FET as the switch 12, or when using a switch configured by using a PIN diode, in principle, the switch 12 It is necessary to provide a capacitor for preventing the passage of a direct current in each signal path connected to each port. However, when the element connected to the signal path has a function of blocking the passage of a direct current and has a high resistance to direct current, a capacitor for blocking the passage of the direct current is provided in the signal path. It does not have to be provided.

  When a switch configured by an MMIC and using an enhancement type FET is used as the switch 12, a direct current is prevented from passing through each signal path connected to each port of the switch 12. There is no need to provide a capacitor.

  Next, another configuration of the balun 11 will be described with reference to FIG. The balun 11 shown in FIG. 12 is configured using a resonator. The balun 11 has two balanced input terminals 111 and 112, one unbalanced output terminal 113, and four quarter-wave resonators 114, 115, 116, and 117. One end of the quarter wavelength resonator 114 is connected to the balanced input end 111, and the other end of the quarter wavelength resonator 114 is connected to the ground. One end of the quarter wavelength resonator 115 is connected to the balanced input end 112, and the other end of the quarter wavelength resonator 115 is connected to the ground. One end of the quarter wavelength resonator 116 is connected to the unbalanced output end 113, and the other end of the quarter wavelength resonator 116 is connected to one end of the quarter wavelength resonator 117. The quarter wavelength resonator 116 is coupled to the quarter wavelength resonator 114, and the quarter wavelength resonator 117 is coupled to the quarter wavelength resonator 115.

  The balun 11 constituted by the LC circuit shown in FIG. 3 has a small insertion loss but a narrow frequency band with good amplitude balance characteristics. On the other hand, the balun 11 configured using the resonator shown in FIG. 12 has a slightly large insertion loss, but a wide frequency band with good amplitude balance characteristics. Further, in the balun 11 configured using the resonator shown in FIG. 12, the direct current is prevented from passing between the balanced input terminals 111 and 112 and the unbalanced output terminal 113. Therefore, when the balun 11 shown in FIG. 12 is used, as a switch 12, in principle, a switch that needs to be provided with a capacitor for blocking the passage of a direct current in each signal path connected to each port is used. However, the signal path between the switch 12 and the balun 11 may not be provided with a capacitor that blocks the passage of a direct current.

  The balun 11 configured using the resonator illustrated in FIG. 12 is configured using a plurality of conductor layers provided in the multilayer substrate 20, similarly to the balun 11 configured by the LC circuit illustrated in FIG. 3. can do.

  Next, first to third modifications of the high-frequency electronic component according to the present embodiment will be described with reference to FIG. FIG. 13 shows a portion included in the high-frequency electronic component of each modified example in the transmission circuit 7. The high-frequency electronic component 10 </ b> A of the first modification includes a power amplifier 14 in addition to the balun 11 and the switch 12. In the high frequency electronic component 10 </ b> A, the power amplifier 14 may be mounted on the upper surface 20 a of the multilayer substrate 20. The input terminal of the power amplifier 14 is connected to the output port 12c of the switch 12, and the output terminal of the power amplifier 14 is connected to the output terminal of the high frequency electronic component 10A. That is, the power amplifier 14 is provided between the output port 12c and the output terminal of the high frequency electronic component 10A.

  The high frequency electronic component 10 </ b> B of the second modified example includes a BPF 13 in addition to the balun 11 and the switch 12. In the high frequency electronic component 10 </ b> B, the BPF 13 may be mounted on the upper surface 20 a of the multilayer substrate 20. The input end of the BPF 13 is connected to the input terminal of the high frequency electronic component 10B to which the transmission signal UMTS Tx is input, and the output end of the BPF 13 is connected to the input port 12a of the switch 12. That is, the BPF 13 is provided between the input port 12a and the input terminal of the high-frequency electronic component 10B to which the transmission signal UMTS Tx is input.

  The high-frequency electronic component 10 </ b> C of the third modification includes a power amplifier 14 and a BPF 13 in addition to the balun 11 and the switch 12. In the high frequency electronic component 10 </ b> C, the power amplifier 14 and the BPF 13 may be mounted on the upper surface 20 a of the multilayer substrate 20. The input terminal of the power amplifier 14 is connected to the output port 12c of the switch 12, and the output terminal of the power amplifier 14 is connected to the output terminal of the high frequency electronic component 10C. The input end of the BPF 13 is connected to the input terminal of the high frequency electronic component 10C to which the transmission signal UMTS Tx is input, and the output end of the BPF 13 is connected to the port 12a of the switch 12.

[Second Embodiment]
Next, with reference to FIG. 14, the high frequency electronic component which concerns on the 2nd Embodiment of this invention is demonstrated. FIG. 14 shows the transmission circuit 7 including the high-frequency electronic component 30 according to the present embodiment. The transmission circuit 7 in the present embodiment includes a balanced input type power amplifier 34 having two balanced input terminals and one unbalanced output terminal, instead of the power amplifier 14 in the first embodiment. . Further, the transmission circuit 7 in the present embodiment includes the high-frequency electronic component 30 according to the present embodiment instead of the high-frequency electronic component 10 according to the first embodiment.

  The high-frequency electronic component 30 includes input terminals 30a, 30b1, and 30b2, output terminals 30c1 and 30c2, a balun 31, and two switches 32 and 33. The balun 31 has one unbalanced input end and two balanced output ends. The circuit configuration of the balun 31 is that two balanced input terminals of the balun 11 in the first embodiment are changed to two balanced output terminals, and one unbalanced output terminal of the balun 11 in the first embodiment is one. It is the same as the balun 11 in the first embodiment except that it is changed to an unbalanced input terminal. The switch 32 has two input ports 32a and 32b and one output port 32c, and selectively connects the output port 32c to one of the input ports 32a and 32b. The switch 33 has two input ports 33a and 33b and one output port 33c, and selectively connects the output port 33c to one of the input ports 33a and 33b.

  The input terminal 30 a is connected to the output end of the BPF 13 and the unbalanced input end of the balun 31. One balanced output terminal of the balun 31 is connected to the input port 32 a of the switch 32. The other balanced output terminal of the balun 31 is connected to the input port 33 a of the switch 33. A transmission signal GSM Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 30b1 and 30b2. The input terminal 30b1 is connected to the input port 32b of the switch 32. The input terminal 30b2 is connected to the input port 33b of the switch 33.

  The output port 32c of the switch 32 is connected to the output terminal 30c1. The output port 33c of the switch 33 is connected to the output terminal 30c2. The output terminals 30 c 1 and 30 c 2 are connected to the two balanced input terminals of the power amplifier 34. The unbalanced output terminal of the power amplifier 34 is connected to the output terminal 7 c of the transmission circuit 7.

  Other configurations of the transmission circuit 7 in the present embodiment are the same as those in the first embodiment. The high frequency electronic component 30 according to the present embodiment corresponds to the second high frequency electronic component of the present invention. In the present embodiment, the transmission signal UMTS Tx in the form of an unbalanced signal corresponds to the first transmission signal in the second high-frequency electronic component of the present invention, and the transmission signal GSM Tx in the form of a balanced signal is the first of the present invention. This corresponds to the second transmission signal in the second high-frequency electronic component. The input terminal 30a corresponds to the first input terminal in the second high frequency electronic component of the present invention, and the input terminals 30b1 and 30b2 correspond to the second input terminal in the second high frequency electronic component of the present invention.

  The switches 32 and 33 correspond to the switches in the second high frequency electronic component of the present invention. The input ports 32a and 33a correspond to the first input port in the second high frequency electronic component of the present invention. The input ports 32b and 33b correspond to the second input port in the second high frequency electronic component of the present invention.

  In the transmission circuit 7 including the high frequency electronic component 30, the transmission signal UMTS Tx in the form of an unbalanced signal output from the IC 2 passes through the BPF 13 and is input to the input terminal 30 a of the high frequency electronic component 30. The balun 31 converts the transmission signal UMTS Tx in the form of an unbalanced signal input to the input terminal 30a into a transmission signal UMTS Tx in the form of a balanced signal and outputs it. The transmission signal GSM Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 30 b 1 and 30 b 2 of the high frequency electronic component 30. The transmission signals UMTS Tx in the form of balanced signals output from the balun 31 are input to the input ports 32a and 33a of the switches 32 and 33. The transmission signals GSM Tx in the form of balanced signals input to the input terminals 30b1 and 30b2 are input to the input ports 32b and 33b of the switches 32 and 33, respectively. The switches 32 and 33 switch between a transmission signal UMTS Tx in the form of a balanced signal input to the input ports 32a and 33a and a transmission signal GSM Tx in the form of a balanced signal input to the input ports 32b and 33b to Output to the amplifier 34. The transmission signal in the form of a balanced signal input to the power amplifier 34 is amplified by the power amplifier 34 and output as a transmission signal in the form of an unbalanced signal. The transmission signal output from the power amplifier 34 is input to the port 3a of the switch 3 in FIG.

  The high-frequency electronic component 30 according to the present embodiment includes a balun 31 using a plurality of conductor layers provided in the multilayer substrate 20 in the same manner as the high-frequency electronic component 10 according to the first embodiment. 32 and 33 can be mounted on the laminated substrate 20.

  Next, the effects of the present embodiment will be described in comparison with a comparative example. FIG. 15 is a block diagram illustrating a circuit configuration of a transmission circuit according to a comparative example. The transmission circuit of this comparative example has two power amplifiers 14A and 34B and two output terminals 15A and 15B instead of the balun 31, the switches 32 and 33, the power amplifier 34 and the output terminal 7c in the transmission circuit shown in FIG. It has. In the transmission circuit of the comparative example, the transmission signal UMTS Tx in the form of an unbalanced signal output from the BPF 13 is amplified by the power amplifier 14A and output from the output terminal 15A. Also, the transmission signal GSM Tx in the form of a balanced signal output from the IC 2 is amplified by the power amplifier 34B and output from the output terminal 15B as the transmission signal GSM Tx in the form of an unbalanced signal. The transmission signal UMTS Tx output from the output terminal 15A is input to the BPF 4b of the duplexer 4 shown in FIG. Further, the transmission signal GSM Tx output from the output terminal 15B is input to the port 1c of the switch 1 shown in FIG.

  In the comparative example shown in FIG. 15, two relatively expensive power amplifiers are required. As a result, it is difficult to reduce the size and cost of the transmission circuit and the high-frequency circuit of the mobile phone including the transmission circuit. On the other hand, in the present embodiment, the transmission signal UMTS Tx and the transmission signal GSM Tx share one power amplifier 34, so that the number of power amplifiers included in the transmission circuit 7 is one compared to the comparative example. As a result, the transmission circuit 7 and the high-frequency circuit of the mobile phone including the transmission circuit 7 can be reduced in size and cost. In the present embodiment, the power amplifier can be reduced by one as compared with the comparative example, but three switches 3, 32, and 33 are newly required. However, since the switch is less expensive than the power amplifier, the cost can be reduced in this embodiment compared to the comparative example.

  In addition to the balun 31 and the switches 32 and 33, the high-frequency electronic component according to the present embodiment includes at least a power amplifier 34 and a BPF 13, as in the first to third modifications in the first embodiment. One may be provided. Other configurations, operations, and effects in the present embodiment are the same as those in the first embodiment.

[Third Embodiment]
Next, with reference to FIG. 16, the high frequency electronic component which concerns on the 3rd Embodiment of this invention is demonstrated. FIG. 16 shows the transmission circuit 7 including the high-frequency electronic component 30 according to the present embodiment. The high-frequency electronic component 30 according to the present embodiment includes a switch 35 that switches a balanced signal in place of the switches 32 and 33 in the second embodiment. The switch 35 has four input ports 35a, 35b, 35c, and 35d and two output ports 35e and 35f. The output port 35e is connected to the input port 35a, and the output port 35f is connected to the input port 35b. The state can be switched between the state in which the output port 35e is connected to the input port 35c and the state in which the output port 35f is connected to the input port 35d.

  Two balanced output terminals of the balun 31 are connected to input ports 35 a and 35 b of the switch 35. The input terminals 30b1 and 30b2 are connected to the input ports 35c and 35d of the switch 35. The output ports 35e and 35f of the switch 35 are connected to the output terminals 30c1 and 30c2.

  In the present embodiment, the switch 35 corresponds to the switch in the second high-frequency electronic component of the present invention. The input ports 35a and 35b correspond to the first input port in the second high frequency electronic component of the present invention. The input ports 35c and 35d correspond to the second input port in the second high frequency electronic component of the present invention.

  In the present embodiment, the transmission signal UMTS Tx in the form of a balanced signal output from the balun 31 is input to the input ports 35a and 35b of the switch 35. The transmission signal GSM Tx input to the input terminals 30b1 and 30b2 is input to the input ports 35c and 35d of the switch 35. The switch 35 switches between the transmission signal UMTS Tx in the form of a balanced signal input to the input ports 35a and 35b and the transmission signal GSM Tx in the form of a balanced signal input to the input ports 35c and 35d, and the power amplifier 34 Output for.

  The high-frequency electronic component 30 according to the present embodiment includes a balun 31 using a plurality of conductor layers provided in the multilayer substrate 20 in the same manner as the high-frequency electronic component 10 according to the first embodiment. It can be configured by mounting 35 on the laminated substrate 20.

  In addition to the balun 31 and the switch 35, the high-frequency electronic component according to the present embodiment includes at least one of the power amplifier 34 and the BPF 13, as in the first to third modifications in the first embodiment. You may have. Other configurations, operations, and effects in the present embodiment are the same as those in the second embodiment.

[Fourth Embodiment]
Next, with reference to FIG. 17, the high frequency electronic component which concerns on the 4th Embodiment of this invention is demonstrated. FIG. 17 shows the transmission circuit 7 including the high-frequency electronic component 40 according to the present embodiment. The high-frequency electronic component 40 according to the present embodiment is used for the transmission circuit 7 that processes the two UMTS transmission signals UMTS Tx1, UMTS Tx2 and the transmission signal GSM Tx. In the present embodiment, when the transmission signal GSM Tx is a transmission signal in at least one of GSM850 (AGSM) and GSM900 (EGSM), the transmission signals UMTS Tx1 and UMTS Tx2 are GSM850 (AGSM) and GSM900 (EGSM). And transmission signals in two different bands among the bands V, VI, and VIII that are close in frequency band. In addition, when the transmission signal GSM Tx is a transmission signal in at least one of GSM1800 (DCS) and GSM1900 (PCS), the transmission signals UMTS Tx1 and UMTS Tx2 are GSM1800 (DCS) and GSM1900 (PCS) It is a transmission signal in two different bands among the close bands I, II, III, IV, IX, and X. In the high-frequency circuit including the transmission circuit 7 in the present embodiment, the IC 2 generates and outputs transmission signals UMTS Tx1 and UMTS Tx2 in the form of unbalanced signals and GSM transmission signals GSM Tx in the form of balanced signals, respectively. To do.

  The transmission circuit 7 according to the present embodiment includes two BPFs 13A and 13B instead of the BPF 13 according to the first embodiment, and relates to the present embodiment instead of the high-frequency electronic component 10 according to the first embodiment. A high-frequency electronic component 40 is provided. Transmission signals UMTS Tx1 and UMTS Tx2 output from the IC 2 are input to the BPFs 13A and 13B, respectively.

  The high frequency electronic component 40 includes input terminals 40a, 40b, 40c1, and 40c2, an output terminal 40d, a balun 11, and a switch 41. The switch 41 has three input ports 41a, 41b, 41c and one output port 41d, and selectively connects the output port 41d to any one of the input ports 41a, 41b, 41c.

  The input terminal 40a is connected to the output end of the BPF 13A and the input port 41a of the switch 41. The input terminal 40b is connected to the output end of the BPF 13B and the input port 41b of the switch 41. A transmission signal GSM Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 40c1 and 40c2. Two balanced input terminals of the balun 11 are connected to input terminals 40c1 and 40c2. The unbalanced output terminal of the balun 11 is connected to the input port 41 c of the switch 41. The output port 41d of the switch 41 is connected to the output terminal 40d. The output terminal 40 d is connected to the input terminal of the power amplifier 14.

  The high frequency electronic component 40 according to the present embodiment corresponds to the first high frequency electronic component of the present invention. In the present embodiment, the transmission signals UMTS Tx1 and UMTS Tx2 in the form of unbalanced signals correspond to the first transmission signal in the first high-frequency electronic component of the present invention, and the transmission signal GSM Tx in the form of balanced signals is the main signal. This corresponds to the second transmission signal in the first high-frequency electronic component of the invention. The input terminals 40a and 40b correspond to the first input terminal in the first high-frequency electronic component of the present invention, and the input terminals 40c1 and 40c2 correspond to the second input terminal in the first high-frequency electronic component of the present invention. To do.

  The input ports 41a and 41b of the switch 41 correspond to the first input port in the first high frequency electronic component of the present invention. The input port 41c of the switch 41 corresponds to the second input port in the first high frequency electronic component of the present invention.

  In the transmission circuit 7 including the high-frequency electronic component 40, the transmission signal UMTS Tx1 in the form of an unbalanced signal output from the IC 2 passes through the BPF 13A and the input terminal 40a and is input to the input port 41a of the switch 41. The transmission signal UMTS Tx2 in the form of an unbalanced signal output from the IC 2 passes through the BPF 13B and the input terminal 40b and is input to the input port 41b of the switch 41. The transmission signal GSM Tx in the form of a balanced signal output from the IC 2 passes through the input terminals 40c1 and 40c2, is converted by the balun 11 into a transmission signal GSM Tx in the form of an unbalanced signal, and is transmitted in the form of this unbalanced signal. The signal GSM Tx is input to the input port 41 c of the switch 41. The switch 41 includes a transmission signal UMTS Tx1 in the form of an unbalanced signal input to the input port 41a, a transmission signal UMTS Tx2 in the form of an unbalanced signal input to the input port 41b, and an unbalanced signal input to the input port 41c. The transmission signal GSM Tx in the form of a balanced signal is switched and output to the power amplifier 14. The transmission signal input to the power amplifier 14 is amplified by the power amplifier 14 and output to the output terminal 7 c of the transmission circuit 7. In the present embodiment, the output terminal 7c is connected to an input port of a switch (not shown) having one input port and three output ports. This switch selectively connects one of the three output ports to the input port, and outputs transmission signals UMTS Tx1, UMTS Tx2, and GSM Tx input to the input port from different output ports.

  The high-frequency electronic component 40 according to the present embodiment includes the balun 11 using a plurality of conductor layers provided in the multilayer substrate 20 in the same manner as the high-frequency electronic component 10 according to the first embodiment. It can be configured by mounting 41 on the laminated substrate 20.

  Next, the effects of the present embodiment will be described in comparison with a comparative example. FIG. 18 is a block diagram illustrating a circuit configuration of a transmission circuit according to a comparative example. The transmission circuit of this comparative example includes three power amplifiers 42A, 42B, and 42C and three output terminals 43A, 43B, and 43C instead of the switch 41, the power amplifier 14, and the output terminal 7c in the transmission circuit shown in FIG. I have. In the transmission circuit of the comparative example, the transmission signal UMTS Tx1 in the form of an unbalanced signal output from the BPF 13A is amplified by the power amplifier 42A and output from the output terminal 43A. The transmission signal UMTS Tx2 in the form of an unbalanced signal output from the BPF 13B is amplified by the power amplifier 42B and output from the output terminal 43B. The transmission signal GSM Tx in the form of an unbalanced signal output from the balun 11 is amplified by the power amplifier 42C and output from the output terminal 43C.

  In the comparative example shown in FIG. 18, three relatively expensive power amplifiers are required, and as a result, miniaturization and cost reduction of the transmission circuit and the high-frequency circuit of the mobile phone including the transmission circuit are hindered. In contrast, in the present embodiment, since one power amplifier 14 is shared by the transmission signals UMTS Tx1, UMTS Tx2, and GSM Tx, the number of power amplifiers included in the transmission circuit 7 is two compared to the comparative example. As a result, the transmission circuit 7 and the high-frequency circuit of the mobile phone including the transmission circuit 7 can be reduced in size and cost.

  Note that the high-frequency electronic component according to the present embodiment may include a power amplifier 14 in addition to the balun 11 and the switch 41 as in the first to third modifications of the first embodiment. In addition, the BPFs 13A and 13B may be provided, or the power amplifier 14 and the BPFs 13A and 13B may be provided. Other configurations, operations, and effects in the present embodiment are the same as those in the first embodiment.

[Fifth Embodiment]
Next, with reference to FIG. 19, the high frequency electronic component which concerns on the 5th Embodiment of this invention is demonstrated. FIG. 19 shows the transmission circuit 7 including the high-frequency electronic component 50 according to the present embodiment. The transmission circuit 7 in the present embodiment includes a balanced input type power amplifier 34 having two balanced input terminals and one unbalanced output terminal, instead of the power amplifier 14 in the fourth embodiment. . In addition, the transmission circuit 7 according to the present embodiment includes the high-frequency electronic component 50 according to the present embodiment instead of the high-frequency electronic component 40 according to the fourth embodiment.

  The high frequency electronic component 50 includes input terminals 50a, 50b, 50c1, and 50c2, output terminals 50d1 and 50d2, baluns 51A and 51B, and a switch 52. Each of the baluns 51A and 51B has one unbalanced input end and two balanced output ends. The circuit configuration of the baluns 51A and 51B is the same as that of the balun 31 in the second embodiment.

  The switch 52 has six input ports 52a, 52b, 52c, 52d, 52e, and 52f and two output ports 52g and 52h. In the switch 52, the output port 52g is connected to the input port 52a, the output port 52h is connected to the input port 52b, the output port 52g is connected to the input port 52c, and the output port 52h is connected to the input port 52d. The output port 52g can be switched to the input port 52e, and the output port 52h can be switched to the input port 52f.

  The input terminal 50a is connected to the output end of the BPF 13A and the unbalanced input end of the balun 51A. The input terminal 50b is connected to the output end of the BPF 13B and the unbalanced input end of the balun 51B. The two balanced output terminals of the balun 51A are connected to the input ports 52a and 52b of the switch 52. The two balanced output terminals of the balun 51B are connected to the input ports 52c and 52d of the switch 52. The input terminals 50c1 and 50c2 are connected to the input ports 52e and 52f of the switch 52. Output ports 52g and 52h of the switch 52 are connected to output terminals 50d1 and 50d2.

  In the present embodiment, the input ports 52a, 52b, 52c, and 52d of the switch 52 correspond to the first input port in the second high-frequency electronic component of the present invention. The input ports 52e and 52f correspond to the second input port in the second high frequency electronic component of the present invention.

  In the transmission circuit 7 including the high frequency electronic component 50, the transmission signal UMTS Tx1 in the form of an unbalanced signal output from the IC 2 passes through the BPF 13A and is input to the input terminal 50a of the high frequency electronic component 50. The transmission signal UMTS Tx2 in the form of an unbalanced signal output from the IC 2 passes through the BPF 13B and is input to the input terminal 50b of the high frequency electronic component 50. The balun 51A converts the transmission signal UMTS Tx1 in the form of an unbalanced signal input to the input terminal 50a into a transmission signal UMTS Tx1 in the form of a balanced signal and outputs it. The balun 51B converts the transmission signal UMTS Tx2 in the form of an unbalanced signal input to the input terminal 50b into a transmission signal UMTS Tx2 in the form of a balanced signal and outputs it. The transmission signal GSM Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 50 c 1 and 50 c 2 of the high frequency electronic component 50.

  A transmission signal UMTS Tx1 in the form of a balanced signal output from the balun 51A is input to the input ports 52a and 52b of the switch 52. A transmission signal UMTS Tx2 in the form of a balanced signal output from the balun 51B is input to the input ports 52c and 52d of the switch 52. The transmission signal GSM Tx in the form of a balanced signal input to the input terminals 50c1 and 50c2 is input to the input ports 52e and 52f of the switch 52. The switch 52 includes a transmission signal UMTS Tx1 in the form of a balanced signal input to the input ports 52a and 52b, a transmission signal UMTS Tx2 in the form of a balanced signal input to the input ports 52c and 52d, and an input port 52e and 52f. The input transmission signal GSM Tx in the form of a balanced signal is switched and output to the power amplifier 34 from the input ports 52g and 52h.

  The high-frequency electronic component 50 according to the present embodiment configures baluns 51A and 51B using a plurality of conductor layers provided in the multilayer substrate 20, as with the high-frequency electronic component 10 according to the first embodiment. The switch 52 can be mounted on the laminated substrate 20.

  Next, the effects of the present embodiment will be described in comparison with a comparative example. FIG. 20 is a block diagram illustrating a circuit configuration of a transmission circuit according to a comparative example. The transmission circuit of this comparative example has three power amplifiers 42A, 42B, and 42D and three output terminals 43A instead of the baluns 51A and 51B, the switch 52, the power amplifier 34, and the output terminal 7c in the transmission circuit shown in FIG. , 43B, 43C. In the transmission circuit of the comparative example, the transmission signal UMTS Tx1 in the form of an unbalanced signal output from the BPF 13A is amplified by the power amplifier 42A and output from the output terminal 43A. The transmission signal UMTS Tx2 in the form of an unbalanced signal output from the BPF 13B is amplified by the power amplifier 42B and output from the output terminal 43B. Also, the transmission signal GSM Tx in the form of a balanced signal output from the IC 2 is amplified by the power amplifier 42D and output from the output terminal 43C as the transmission signal GSM Tx in the form of an unbalanced signal.

  In the comparative example shown in FIG. 20, three relatively expensive power amplifiers are required, and as a result, miniaturization and cost reduction of the transmission circuit and the high-frequency circuit of the mobile phone including it are hindered. On the other hand, in this embodiment, since one power amplifier 34 is shared by the transmission signals UMTS Tx1, UMTS Tx2, and GSM Tx, the number of power amplifiers included in the transmission circuit 7 is two compared to the comparative example. As a result, the transmission circuit 7 and the high-frequency circuit of the mobile phone including the transmission circuit 7 can be reduced in size and cost.

  In this embodiment, two switches that selectively connect any one of the three input ports to one output port may be provided instead of the switch 52.

  The high-frequency electronic component 50 according to the present embodiment includes a power amplifier 34 in addition to the baluns 51A and 51B and the switch 52, as in the first to third modifications in the first embodiment. Alternatively, the BPFs 13A and 13B may be provided, or the power amplifier 34 and the BPFs 13A and 13B may be provided. Other configurations, operations, and effects in the present embodiment are the same as those in the fourth embodiment.

[Sixth Embodiment]
Next, with reference to FIG. 21, a high-frequency electronic component according to a sixth embodiment of the present invention will be described. FIG. 21 shows the transmission circuit 7 including the high-frequency electronic component 60 according to the present embodiment. The transmission circuit 7 in the present embodiment includes a switch 63 and a high-frequency electronic component 60 according to the present embodiment, instead of the high-frequency electronic component 50 according to the fifth embodiment. The switch 63 has an input port 63a connected to the output end of the BPF 13A, an input port 63b connected to the output end of the BPF 13B, and an output port 63c. The output port 63c is one of the input ports 63a and 63b. Selectively connect to.

  The high-frequency electronic component 60 includes input terminals 60a, 60b1, and 60b2, output terminals 60c1 and 60c2, a balun 61, and a switch 62. The input terminal 60 a is connected to the output port 63 c of the switch 63. The balun 61 has one unbalanced input end and two balanced output ends. The circuit configuration of the balun 61 is the same as that of the balun 31 in the second embodiment. The unbalanced input terminal of the balun 61 is connected to the input terminal 60a.

  The switch 62 has four input ports 62a, 62b, 62c, and 62d and two output ports 62e and 62f. In the switch 62, the output port 62e is connected to the input port 62a, the output port 62f is connected to the input port 62b, the output port 62e is connected to the input port 62c, and the output port 62f is connected to the input port 62d. You can switch between the two states.

  The two balanced output terminals of the balun 61 are connected to input ports 62 a and 62 b of the switch 62. The input terminals 60b1 and 60b2 are connected to the input ports 62c and 62d of the switch 62. The output ports 62e and 62f of the switch 62 are connected to the output terminals 60c1 and 60c2.

  In the present embodiment, the input ports 62a and 62b of the switch 62 correspond to the first input port in the second high frequency electronic component of the present invention. The input ports 62c and 62d correspond to the second input port in the second high frequency electronic component of the present invention.

  In the transmission circuit 7 including the high-frequency electronic component 60, the transmission signal UMTS Tx1 in the form of an unbalanced signal output from the IC 2 passes through the BPF 13A and is input to the input port 63a of the switch 63. The transmission signal UMTS Tx2 in the form of an unbalanced signal output from the IC 2 passes through the BPF 13B and is input to the input port 63b of the switch 63. The switch 63 switches between the transmission signal UMTS Tx1 input to the input port 63a and the transmission signal UMTS Tx2 input to the input port 63b, and outputs from the output port 63c to the input terminal 60a of the high-frequency electronic component 60. To do.

  The balun 61 of the high-frequency electronic component 60 receives the transmission signal UMTS Tx1 in the form of an unbalanced signal input to the input terminal 60a or the transmission signal UMTS Tx2 in the form of an unbalanced signal, the transmission signal UMTS Tx1 in the form of a balanced signal, or the balanced signal. The signal is converted to a transmission signal UMTS Tx2 and output. The transmission signal GSM Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 60 b 1 and 60 b 2 of the high frequency electronic component 60.

  A transmission signal UMTS Tx1 in the form of a balanced signal output from the balun 61 or a transmission signal UMTS Tx2 in the form of a balanced signal is input to the input ports 62a and 62b of the switch 62. The transmission signal GSM Tx in the form of a balanced signal input to the input terminals 60b1 and 60b2 is input to the input ports 62c and 62d of the switch 62. The switch 62 includes a transmission signal UMTS Tx1 in the form of a balanced signal input to the input ports 62a and 62b or a transmission signal UMTS Tx2 in the form of a balanced signal and a transmission signal in the form of a balanced signal input to the input ports 62c and 62d. GSM Tx is switched and output to the power amplifier 34 from the output ports 62e and 62f.

  The high-frequency electronic component 60 according to the present embodiment includes a balun 61 using a plurality of conductor layers provided in the multilayer substrate 20 in the same manner as the high-frequency electronic component 10 according to the first embodiment. It can be configured by mounting 62 on the laminated substrate 20.

  In the present embodiment, instead of the switch 62, two switches that selectively connect one of the two input ports to one output port may be provided.

  The high-frequency electronic component 60 according to the present embodiment may include at least one of the power amplifier 34 and the switch 63 in addition to the balun 61 and the switch 62. In addition, when the high frequency electronic component 60 according to the present embodiment includes the switch 63, the high frequency electronic component 60 may further include BPFs 13A and 13B. Other configurations, operations, and effects in the present embodiment are the same as those in the fifth embodiment.

[Seventh Embodiment]
Next, with reference to FIG. 22, the high frequency electronic component which concerns on the 7th Embodiment of this invention is demonstrated. FIG. 22 shows the transmission circuit 7 including the high-frequency electronic component 70 according to the present embodiment. The high-frequency electronic component 70 according to the present embodiment includes three UMTS transmission signals UMTS-L Tx, UMTS-H Tx1, UMTS-H Tx2, and two transmission signals GSM-L Tx, GSM-H Tx. It is used for the transmission circuit 7 to process. The transmission signal GSM-L Tx includes a transmission signal in at least one of GSM850 (AGSM) and GSM900 (EGSM) having a frequency band close to the four systems shown in Table 1. The transmission signal GSM-H Tx includes a transmission signal in at least one of GSM1800 (DCS) and GSM1900 (PCS) having a close frequency band among the four systems shown in Table 1. The transmission signal UMTS-L Tx is a transmission signal in any of bands V, VI, and VIII that are close in frequency band to GSM850 (AGSM) and GSM900 (EGSM). Transmission signals UMTS-H Tx1 and UMTS-H Tx2 are transmission signals in two different bands of bands I, II, III, IV, IX, and X, which are close to GSM1800 (DCS) and GSM1900 (PCS). It is. In the high-frequency circuit including the transmission circuit 7 in the present embodiment, the IC 2 includes UMTS transmission signals UMTS-L Tx, UMTS-H Tx1, and UMTS-H Tx2 in the form of unbalanced signals, respectively, The GSM transmission signals GSM-L Tx and GSM-H Tx are generated and output.

  The transmission circuit 7 in the present embodiment includes three BPFs 73, 76, and 77, the high-frequency electronic component 70 according to the present embodiment, two power amplifiers 14L and 14H, and two output terminals 7L and 7H. ing. Transmission signals UMTS-L Tx, UMTS-H Tx1, and UMTS-H Tx2 output from the IC 2 are input to the BPFs 73, 76, and 77, respectively.

  The high-frequency electronic component 70 includes input terminals 70a, 70b1, 70b2, 70c, 70d, 70e1, and 70e2, output terminals 70f and 70g, baluns 71 and 74, and switches 72 and 75. Each of the baluns 71 and 74 has two balanced input ends and one unbalanced output end. The circuit configuration of the baluns 71 and 74 is the same as that of the balun 11 in the first embodiment.

  The switch 72 has two input ports 72a and 72b and one output port 72c, and selectively connects the output port 72c to one of the input ports 72a and 72b. The switch 75 has three input ports 75a, 75b, and 75c and one output port 75d, and selectively connects the output port 75d to any one of the input ports 75a, 75b, and 75c.

  The input terminal 70 a is connected to the output end of the BPF 73 and the input port 72 a of the switch 72. A transmission signal GSM-L Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 70b1 and 70b2. The two balanced input ends of the balun 71 are connected to the input terminals 70b1 and 70b2. The unbalanced output terminal of the balun 71 is connected to the input port 72 b of the switch 72. The input terminal 70 c is connected to the output end of the BPF 76 and the input port 75 a of the switch 75. The input terminal 70 d is connected to the output end of the BPF 77 and the input port 75 b of the switch 75. A transmission signal GSM-H Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 70e1 and 70e2. The two balanced input ends of the balun 74 are connected to the input terminals 70e1 and 70e2. The unbalanced output terminal of the balun 74 is connected to the input port 75 c of the switch 75.

  The output port 72c of the switch 72 is connected to the output terminal 70f. The output terminal 70f is connected to the input terminal of the power amplifier 14L. The output terminal of the power amplifier 14L is connected to the output terminal 7L. The output port 75c of the switch 75 is connected to the output terminal 70g. The output terminal 70g is connected to the input terminal of the power amplifier 14H. The output terminal of the power amplifier 14H is connected to the output terminal 7H.

  The high frequency electronic component 70 according to the present embodiment corresponds to the first high frequency electronic component of the present invention. In the present embodiment, the transmission signals UMTS-L Tx, UMTS-H Tx1, and UMTS-H Tx2 in the form of an unbalanced signal correspond to the first transmission signal in the first high-frequency electronic component of the present invention and are balanced signals. The transmission signals GSM Tx-L and GSM Tx-H in the form correspond to the second transmission signal in the first high-frequency electronic component of the present invention. The input terminals 70a, 70c and 70d correspond to the first input terminal in the first high frequency electronic component of the present invention, and the input terminals 70b1, 70b2, 70e1 and 70e2 correspond to the first input terminal in the first high frequency electronic component of the present invention. 2 input terminals.

  The input port 72a of the switch 72 and the input ports 75a and 75b of the switch 75 correspond to the first input port in the first high-frequency electronic component of the present invention. The input port 72b of the switch 72 and the input port 75c of the switch 75 correspond to the second input port in the first high-frequency electronic component of the present invention.

  In the transmission circuit 7 including the high-frequency electronic component 70, the transmission signal UMTS-L Tx in the form of an unbalanced signal output from the IC 2 passes through the BPF 73 and the input terminal 70a and is input to the input port 72a of the switch 72. . The transmission signal GSM-L Tx in the form of a balanced signal output from the IC 2 passes through the input terminals 70b1 and 70b2, and is converted by the balun 71 into the transmission signal GSM-L Tx in the form of an unbalanced signal. The transmission signal GSM-L Tx in the form is input to the input port 72b of the switch 72. The switch 72 switches between the transmission signal UMTS-L Tx in the form of an unbalanced signal input to the input port 72a and the transmission signal GSM-L Tx in the form of an unbalanced signal input to the input port 72b, Output to the amplifier 14L. The transmission signal input to the power amplifier 14L is amplified by the power amplifier 14L and output to the output terminal 7L of the transmission circuit 7.

  Also, the transmission signal UMTS-H Tx1 in the form of an unbalanced signal output from the IC 2 passes through the BPF 76 and the input terminal 70 c and is input to the input port 75 a of the switch 75. The transmission signal UMTS-H Tx2 in the form of an unbalanced signal output from the IC 2 passes through the BPF 77 and the input terminal 70d and is input to the input port 75b of the switch 75. The transmission signal GSM-H Tx in the form of a balanced signal output from the IC 2 passes through the input terminals 70e1 and 70e2, and is converted by the balun 74 into the transmission signal GSM-H Tx in the form of an unbalanced signal. The transmission signal GSM-H Tx in the form is input to the input port 75 c of the switch 75. The switch 75 includes a transmission signal UMTS-H Tx1 in the form of an unbalanced signal input to the input port 75a, a transmission signal UMTS-H Tx2 in the form of an unbalanced signal input to the input port 75b, and an input port 75c. The input transmission signal GSM-H Tx in the form of an unbalanced signal is switched and output to the power amplifier 14H. The transmission signal input to the power amplifier 14H is amplified by the power amplifier 14H and output to the output terminal 7H of the transmission circuit 7.

  In the present embodiment, the output terminal 7L is connected to an input port of a switch (not shown) having one input port and two output ports. This switch selectively connects one of the two output ports to the input port, and outputs transmission signals UMTS-L Tx and GSM-L Tx input to the input port from different output ports. The output terminal 7H is connected to an input port of a switch (not shown) having one input port and three output ports. This switch selectively connects one of the three output ports to the input port, and sends the transmission signals UMTS-H Tx1, UMTS-H Tx2, and GSM-H Tx input to the input port from different output ports. Output.

  The high frequency electronic component 70 according to the present embodiment configures the baluns 71 and 74 using a plurality of conductor layers provided in the multilayer substrate 20, similarly to the high frequency electronic component 10 according to the first embodiment. The switches 72 and 75 can be mounted on the laminated substrate 20.

  Next, the effects of the present embodiment will be described in comparison with a comparative example. FIG. 23 is a block diagram illustrating a circuit configuration of a transmission circuit according to a comparative example. The transmission circuit of this comparative example includes five power amplifiers 78A, 78B, 78C, 78D, and 78E instead of the switches 72 and 75, the power amplifiers 14L and 14H, and the output terminals 7L and 7H in the transmission circuit shown in FIG. Five output ends 79A, 79B, 79C, 79D, 79E are provided. In the transmission circuit of the comparative example, the transmission signal UMTS-L Tx in the form of an unbalanced signal output from the BPF 73 is amplified by the power amplifier 78A and output from the output terminal 79A. The transmission signal GSM-L Tx in the form of an unbalanced signal output from the balun 71 is amplified by the power amplifier 78B and output from the output terminal 79B. The transmission signal UMTS-H Tx1 in the form of an unbalanced signal output from the BPF 76 is amplified by the power amplifier 78C and output from the output terminal 79C. The transmission signal UMTS-H Tx2 in the form of an unbalanced signal output from the BPF 77 is amplified by the power amplifier 78D and output from the output terminal 79D. The transmission signal GSM-H Tx in the form of an unbalanced signal output from the balun 74 is amplified by the power amplifier 78E and output from the output terminal 79E.

  In the comparative example shown in FIG. 23, five comparatively expensive power amplifiers are required. As a result, miniaturization and cost reduction of the transmission circuit and the high-frequency circuit of the mobile phone including the transmission circuit are prevented. On the other hand, in this embodiment, one power amplifier 14L is shared by transmission signals UMTS-L Tx and GSM-L Tx having close frequency bands, and transmission signals UMTS-H Tx1 and UMTS-H Tx2 having close frequency bands are used. , GSM-H Tx shares one power amplifier 14H, the number of power amplifiers included in the transmission circuit 7 can be reduced by three compared to the comparative example. As a result, the transmission circuit 7 and In addition, it is possible to reduce the size and cost of the high-frequency circuit of the mobile phone.

  In addition to the baluns 71 and 74 and the switches 72 and 75, the high-frequency electronic component according to the present embodiment includes the power amplifiers 14L and 14H, as in the first to third modifications in the first embodiment. May be provided, BPF 73, 76, 77 may be provided, or power amplifiers 14L, 14H and BPF 73, 76, 77 may be provided. Other configurations, operations, and effects in the present embodiment are the same as those in the first embodiment.

[Eighth Embodiment]
Next, with reference to FIG. 24, a high-frequency electronic component according to an eighth embodiment of the present invention will be described. FIG. 24 shows the transmission circuit 7 including the high-frequency electronic component 80 according to the present embodiment. The transmission circuit 7 according to the present embodiment includes balanced input type power amplifiers 34L, 34 having two balanced input terminals and one unbalanced output terminal, respectively, instead of the power amplifiers 14L, 14H according to the seventh embodiment. 34H is provided. The transmission circuit 7 in the present embodiment includes a high-frequency electronic component 80 according to the present embodiment instead of the high-frequency electronic component 70 according to the seventh embodiment.

  The high-frequency electronic component 80 includes input terminals 80a, 80b1, 80b2, 80c, 80d, 80e1, 80e2, output terminals 80f1, 80f2, 80g1, 80g2, baluns 81, 83, 84, and switches 82, 85. Yes. Each of the baluns 81, 83, and 84 has one unbalanced input end and two balanced output ends. The circuit configurations of the baluns 81, 83, and 84 are the same as those of the balun 31 in the second embodiment.

  The switch 82 has four input ports 82a, 82b, 82c, and 82d and two output ports 82e and 82f. The switch 82 has an output port 82e connected to the input port 82a, an output port 82f connected to the input port 82b, an output port 82e connected to the input port 82c, and an output port 82f connected to the input port 82d. You can switch between the two states.

  The switch 85 has six input ports 85a, 85b, 85c, 85d, 85e, and 85f and two output ports 85g and 85h. In the switch 85, the output port 85g is connected to the input port 85a, the output port 85h is connected to the input port 85b, the output port 85g is connected to the input port 85c, and the output port 85h is connected to the input port 85d. The state where the output port 85g is connected to the input port 85e and the state where the output port 85h is connected to the input port 85f can be switched.

  The input terminal 80 a is connected to the output end of the BPF 73 and the unbalanced input end of the balun 81. Two balanced output terminals of the balun 81 are connected to input ports 82a and 82b of the switch 82. The input terminals 80b1 and 80b2 are connected to the input ports 82c and 82d of the switch 82. Output ports 82e and 82f of the switch 82 are connected to output terminals 80f1 and 80f2.

  The input terminal 80 c is connected to the output end of the BPF 76 and the unbalanced input end of the balun 83. The input terminal 80 d is connected to the output end of the BPF 77 and the unbalanced input end of the balun 84. The two balanced output terminals of the balun 83 are connected to the input ports 85a and 85b of the switch 85. The two balanced output terminals of the balun 84 are connected to the input ports 85c and 85d of the switch 85. The input terminals 80e1 and 80e2 are connected to the input ports 85e and 85f of the switch 85. Output ports 85g and 85h of the switch 85 are connected to output terminals 80g1 and 80g2.

  In the present embodiment, the input ports 82a and 82b of the switch 82 and the input ports 85a, 85b, 85c and 85d of the switch 85 correspond to the first input port in the second high frequency electronic component of the present invention. The input ports 82c and 82d of the switch 82 and the input ports 85e and 85f of the switch 85 correspond to the second input port in the second high frequency electronic component of the present invention.

  In the transmission circuit 7 including the high frequency electronic component 80, the transmission signal UMTS-L Tx in the form of an unbalanced signal output from the IC 2 passes through the BPF 73 and is input to the input terminal 80 a of the high frequency electronic component 80. The balun 81 converts the transmission signal UMTS-L Tx in the form of an unbalanced signal input to the input terminal 80a into a transmission signal UMTS-L Tx in the form of a balanced signal and outputs it. The transmission signal GSM-L Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 80 b 1 and 80 b 2 of the high frequency electronic component 80.

  The transmission signal UMTS-H Tx1 in the form of an unbalanced signal output from the IC 2 passes through the BPF 76 and is input to the input terminal 80 c of the high frequency electronic component 80. The transmission signal UMTS-H Tx2 in the form of an unbalanced signal output from the IC 2 passes through the BPF 77 and is input to the input terminal 80 d of the high-frequency electronic component 80. The balun 83 converts the transmission signal UMTS-H Tx1 in the form of an unbalanced signal input to the input terminal 80c into a transmission signal UMTS-H Tx1 in the form of a balanced signal and outputs it. The balun 84 converts the transmission signal UMTS-H Tx2 in the form of an unbalanced signal input to the input terminal 80d into a transmission signal UMTS-H Tx2 in the form of a balanced signal and outputs it. The transmission signal GSM-H Tx in the form of a balanced signal output from the IC 2 is input to the input terminals 80 e 1 and 80 e 2 of the high frequency electronic component 80.

  A transmission signal UMTS-L Tx in the form of a balanced signal output from the balun 81 is input to the input ports 82 a and 82 b of the switch 82. The transmission signal GSM-L Tx in the form of a balanced signal input to the input terminals 80b1 and 80b2 is input to the input ports 82c and 82d of the switch 82. The switch 82 switches between the transmission signal UMTS-L Tx in the form of a balanced signal input to the input ports 82a and 82b and the transmission signal GSM-L Tx in the form of a balanced signal input to the input ports 82c and 82d. The power is output to the power amplifier 34L from the output ports 82e and 82f. The transmission signal input to the power amplifier 34L is amplified by the power amplifier 34L and output to the output terminal 7L of the transmission circuit 7 as a transmission signal in the form of an unbalanced signal.

  A transmission signal UMTS-H Tx1 in the form of a balanced signal output from the balun 83 is input to the input ports 85a and 85b of the switch 85. The transmission signal UMTS-H Tx2 in the form of a balanced signal output from the balun 84 is input to the input ports 85c and 85d of the switch 85. The transmission signal GSM-H Tx in the form of a balanced signal input to the input terminals 80e1 and 80e2 is input to the input ports 85e and 85f of the switch 85. The switch 85 includes a transmission signal UMTS-H Tx1 in the form of a balanced signal input to the input ports 85a and 85b, a transmission signal UMTS-H Tx2 in the form of a balanced signal input to the input ports 85c and 85d, and an input port The transmission signal GSM-H Tx in the form of a balanced signal input to 85e and 85f is switched and output to the power amplifier 34H from the output ports 85g and 85h. The transmission signal input to the power amplifier 34H is amplified by the power amplifier 34H and output to the output terminal 7H of the transmission circuit 7 as a transmission signal in the form of an unbalanced signal.

  The high-frequency electronic component 80 according to the present embodiment has the baluns 81, 83, and 84 using a plurality of conductor layers provided in the multilayer substrate 20, as with the high-frequency electronic component 10 according to the first embodiment. It can be configured by mounting the switches 82 and 85 on the laminated substrate 20.

  Next, the effects of the present embodiment will be described in comparison with a comparative example. FIG. 25 is a block diagram illustrating a circuit configuration of a transmission circuit according to a comparative example. The transmission circuit of this comparative example has five power amplifiers 88A, 88B instead of the baluns 81, 83, 84, switches 82, 85, power amplifiers 34L, 34H and output terminals 7L, 7H in the transmission circuit shown in FIG. , 88C, 88D, 88E and five output terminals 89A, 89B, 89C, 89D, 89E. In the transmission circuit of the comparative example, the transmission signal UMTS-L Tx in the form of an unbalanced signal output from the BPF 73 is amplified by the power amplifier 88A and output from the output terminal 89A. The transmission signal GSM-L Tx in the form of a balanced signal output from the IC 2 is amplified by the power amplifier 88B and output from the output terminal 89B as the transmission signal GSM-L Tx in the form of an unbalanced signal. The transmission signal UMTS-H Tx1 in the form of an unbalanced signal output from the BPF 76 is amplified by the power amplifier 88C and output from the output terminal 89C. The transmission signal UMTS-H Tx2 in the form of an unbalanced signal output from the BPF 77 is amplified by the power amplifier 88D and output from the output terminal 89D. The transmission signal GSM-H Tx in the form of a balanced signal output from the IC 2 is amplified by the power amplifier 88E and output from the output terminal 89E as the transmission signal GSM-H Tx in the form of an unbalanced signal.

  In the comparative example shown in FIG. 25, five relatively expensive power amplifiers are required, and as a result, miniaturization and cost reduction of the transmission circuit and the high-frequency circuit of the mobile phone including the transmission circuit are hindered. On the other hand, in the present embodiment, one power amplifier 34L is shared by transmission signals UMTS-L Tx and GSM-L Tx having close frequency bands, and transmission signals UMTS-H Tx1 and UMTS-H Tx2 having close frequency bands are used. , GSM-H Tx shares one power amplifier 34H, the number of power amplifiers included in the transmission circuit 7 can be reduced by three compared to the comparative example. As a result, the transmission circuit 7 and In addition, it is possible to reduce the size and cost of the high-frequency circuit of the mobile phone.

  In the present embodiment, two switches that selectively connect one of the two input ports to one output port may be provided instead of the switch 82. Instead of the switch 85, two switches that selectively connect any one of the three input ports to one output port may be provided.

  In addition to the baluns 81, 83, 84 and the switches 82, 85, the high-frequency electronic component 80 according to the present embodiment includes a power amplifier, as in the first to third modifications of the first embodiment. 34L, 34H may be provided, BPF 73, 76, 77 may be provided, or power amplifiers 34L, 34H and BPF 73, 76, 77 may be provided. Other configurations, operations, and effects in the present embodiment are the same as those in the seventh embodiment.

  In addition, this invention is not limited to said each embodiment, A various change is possible. For example, the present invention can be applied not only to a transmission circuit in a mobile phone but also to all transmission circuits that process a plurality of transmission signals.

  Further, in the case where the high frequency electronic component according to each of the above embodiments does not include a power amplifier, the input terminal and the output terminal are reversed from those in the embodiment, whereby a plurality of received signals are converted into unbalanced signals. It can be used as a high-frequency electronic component that separates and outputs a received signal in the form of and a received signal in the form of a balanced signal. For example, in the high-frequency electronic component 10 according to the first embodiment shown in FIGS. 2 and 3, when the terminal 10c is an input terminal and the terminals 10a, 10b1, and 10b2 are output terminals, the high-frequency electronic component 10 is, for example, It can be used in the following manner. In other words, the terminal 10c receives a UMTS reception signal UMTS Rx in the form of an unbalanced signal or a GSM reception signal GSM Rx in the form of an unbalanced signal. The switch 12 connects either of the ports 12a and 12b to the port 12c according to the type of the received signal to be input, thereby outputting the received signal UMTS Rx from the port 12a to the terminal 10a and receiving the received signal GSM Rx as the port. Output to the balun 11 from 12b. The balun 11 converts the received signal GSM Rx in the form of an unbalanced signal into a received signal GSM Rx in the form of a balanced signal and outputs it from the terminals 10b1 and 10b2. Similarly, in the high-frequency electronic component according to another embodiment, the input terminal and the output terminal can be used in the opposite manner to the embodiment.

It is a block diagram which shows the circuit structure of an example of the high frequency circuit of the mobile telephone containing the high frequency electronic component which concerns on the 1st Embodiment of this invention. FIG. 2 is a block diagram showing a circuit configuration of a transmission circuit in the high frequency circuit shown in FIG. 1. It is a circuit diagram which shows the circuit structure of the high frequency electronic component which concerns on the 1st Embodiment of this invention. 1 is a perspective view of a high frequency electronic component according to a first embodiment of the present invention. 1 is a plan view of a high-frequency electronic component according to a first embodiment of the present invention. FIG. 5 is an explanatory diagram showing the top surfaces of the first and second dielectric layers in the multilayer substrate shown in FIG. 4. FIG. 5 is an explanatory diagram showing the top surfaces of the third and fourth dielectric layers in the multilayer substrate shown in FIG. 4. FIG. 5 is an explanatory diagram showing the top surfaces of the fifth and sixth dielectric layers in the multilayer substrate shown in FIG. 4. FIG. 5 is an explanatory diagram showing the top surfaces of the seventh and eighth dielectric layers in the multilayer substrate shown in FIG. 4. FIG. 5 is an explanatory diagram showing an upper surface of a ninth dielectric layer and a conductor layer under the ninth dielectric layer in the multilayer substrate shown in FIG. 4. It is a block diagram which shows the high frequency circuit of the comparative example with respect to the high frequency circuit in the 1st Embodiment of this invention. It is a circuit diagram which shows the other structure of the balun in the 1st Embodiment of this invention. It is a block diagram which shows the 1st thru | or 3rd modification of the high frequency electronic component which concerns on the 1st Embodiment of this invention. It is a block diagram which shows the transmission circuit containing the high frequency electronic component which concerns on the 2nd Embodiment of this invention. It is a block diagram which shows the transmission circuit of the comparative example with respect to the transmission circuit in the 2nd Embodiment of this invention. It is a block diagram which shows the transmission circuit containing the high frequency electronic component which concerns on the 3rd Embodiment of this invention. It is a block diagram which shows the transmission circuit containing the high frequency electronic component which concerns on the 4th Embodiment of this invention. It is a block diagram which shows the transmission circuit of the comparative example with respect to the transmission circuit in the 4th Embodiment of this invention. It is a block diagram which shows the transmission circuit containing the high frequency electronic component which concerns on the 5th Embodiment of this invention. It is a block diagram which shows the transmission circuit of the comparative example with respect to the transmission circuit in the 5th Embodiment of this invention. It is a block diagram which shows the transmission circuit containing the high frequency electronic component which concerns on the 6th Embodiment of this invention. It is a block diagram which shows the transmission circuit containing the high frequency electronic component which concerns on the 7th Embodiment of this invention. It is a block diagram which shows the transmission circuit of the comparative example with respect to the transmission circuit in the 7th Embodiment of this invention. It is a block diagram which shows the transmission circuit containing the high frequency electronic component which concerns on the 8th Embodiment of this invention. It is a block diagram which shows the transmission circuit of the comparative example with respect to the transmission circuit in the 8th Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Switch, 2 ... IC, 3 ... Switch, 4 ... Duplexer, 5, 6 ... BPF, 7 ... Transmission circuit, 10 ... High frequency electronic component, 11 ... Balun, 12 ... Switch, 13 ... BPF, 14 ... Power amplifier, 20: Laminated substrate.

Claims (10)

A high-frequency electronic component used in a transmission circuit that processes a plurality of transmission signals,
A first input terminal to which a first transmission signal in the form of an unbalanced signal is input;
A second input terminal to which a second transmission signal in the form of a balanced signal is input;
A balun for converting the second transmission signal in the form of a balanced signal input to the second input terminal into a second transmission signal in the form of an unbalanced signal and outputting the second transmission signal;
A switch that has a first input port, a second input port, and an output port, and switches a signal input to the first and second input ports to output from the output port;
The first transmission signal input to the first input terminal is input to the first input port,
A second transmission signal in the form of an unbalanced signal output from the balun is input to the second input port,
The high-frequency electronic component according to claim 1, wherein the output port is connected to a power amplifier that amplifies a signal output from the output port.   The high frequency electronic component according to claim 1, further comprising the power amplifier.   3. The high frequency electronic component according to claim 1, further comprising a band pass filter provided between the first input terminal and the first input port.   4. The capacitor according to claim 1, further comprising a capacitor provided in at least one of signal paths connected to each of the first input port, the second input port, and the output port. The high frequency electronic component according to any one of the above.   And a laminated substrate including a plurality of laminated dielectric layers, wherein the balun is configured using a plurality of conductor layers provided in the laminated substrate, and the switch is mounted on the laminated substrate. The high-frequency electronic component according to claim 1, wherein A high-frequency electronic component used in a transmission circuit that processes a plurality of transmission signals,
A first input terminal to which a first transmission signal in the form of an unbalanced signal is input;
A second input terminal to which a second transmission signal in the form of a balanced signal is input;
A balun that converts a first transmission signal in the form of an unbalanced signal input to the first input terminal into a first transmission signal in the form of a balanced signal and outputs the balun;
A switch that has a first input port, a second input port, and an output port, and switches a signal input to the first and second input ports to output from the output port;
A first transmission signal in the form of a balanced signal output from the balun is input to the first input port,
A second transmission signal input to a second input terminal is input to the second input port,
The high-frequency electronic component according to claim 1, wherein the output port is connected to a power amplifier that amplifies a signal output from the output port.   The high frequency electronic component according to claim 6, further comprising the power amplifier.   The high-frequency electronic component according to claim 6, further comprising a band-pass filter provided between the first input terminal and the balun.   9. The capacitor according to claim 6, further comprising a capacitor provided in at least one of signal paths connected to each of the first input port, the second input port, and the output port. The high frequency electronic component according to any one of the above.   And a laminated substrate including a plurality of laminated dielectric layers, wherein the balun is configured using a plurality of conductor layers provided in the laminated substrate, and the switch is mounted on the laminated substrate. The high-frequency electronic component according to claim 6, wherein

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