CN103379670A - Multi-mode terminal - Google Patents

Multi-mode terminal Download PDF

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Publication number
CN103379670A
CN103379670A CN201210118736XA CN201210118736A CN103379670A CN 103379670 A CN103379670 A CN 103379670A CN 201210118736X A CN201210118736X A CN 201210118736XA CN 201210118736 A CN201210118736 A CN 201210118736A CN 103379670 A CN103379670 A CN 103379670A
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lte
frequency
signal
radio
gsm
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周正林
谢红兵
杨红霞
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ZTE Corp
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ZTE Corp
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Abstract

The invention relates to the communication field, and provides a multi-mode terminal. The multi-mode terminal comprises a base band unit and a radio frequency unit, wherein the base band unit is used for processing received I/Q signals and supplying the I/Q signals to a transmitting access, the base band unit supports the GSM system, the TD-SCDMA system, the FDD-LTE system and the TDD-LTE system, the radio frequency unit is used for supporting receiving and transmitting of radio-frequency signals in each frequency band of the GSM system, the TD-SCDMA system, the FDD-LTE system and the TDD-LTE system. By means of the technical scheme, the problems that different IQ interfaces are used in different modes and the same frequency band in the different modes uses different radio frequency accesses are solved, the complexity of the IQ interfaces is reduced, the number of the radio frequency accesses is reduced, and the size of a multimode one-standby terminal can be effectively reduced.

Description

A kind of multimode terminal
Technical field
The present invention relates to communication field, relate to especially a kind of multimode terminal.
Background technology
The mobile communication technology development is maked rapid progress, by early stage GSM (Global System of Mobile communication, global system for mobile communications) mobile communication, 3G (3rd-generation, the 3G (Third Generation) Moblie technology) mobile communication, develop into fast LTE (Long Term Evolution, Long Term Evolution) technology.The network of at present mobile communication has GSM mobile network, 3G mobile network, LTE mobile network, and the large-scale operator that has all can have GSM mobile network, 3G mobile network, LTE mobile network.The terminals such as dual-mode dual-standby that double-mode single-standby terminal, 2G and the 3G of 2G single-mode terminal, 3G single-mode terminal, 2G and 3G are arranged in the market, development along with the LTE technology, need to support three mould terminals of 2G, 3G, LTE network, the user only needs low speed, middling speed, the high speed resources such as 2G, 3G that a terminal just can be used operator to be provided, LTE, can also solve 2G, 3G, LTE network load equilibrium problem simultaneously.
FDD_LTE (Frequency Division Duplexing (FDD) LTE)/TDD_LTE (time division duplex LTE)/TD-SCDMA (Time Division-Synchronous Code Division Multiple Access, TD SDMA)/GSM multimode treats that singly the terminal radio frequency scheme has two kinds of situations at present.As shown in Figure 1 a kind of, that the radio frequency dual chip is realized LTE/UMTS (Universal Mobile Telecommunications System, universal mobile telecommunications system)/the single band of GSM multimode framework block diagram, radio-frequency (RF) receiving and transmission module is comprised of a plurality of radio frequency chip Transceiver, GSM, TD-SCDMA, LTE is connected with digital baseband chip Digital Baseband by different interfaces, the interface gateway more complicated, the frequency range that TDD_LTE is identical with TD-SCDMA can not realize the multiplexing of path, the radio frequency path redundant circuit is many, has increased area occupied and design complexities.Another kind is that the radio frequency single-chip is realized the single band of LTE/UMTS/GSM multimode framework block diagram as shown in Figure 2, and the transfer of data of rf chip and digital baseband chip is made of with digital mouthful jointly analog I/Q.
In the technique scheme, the interface of transfer of data is many, has increased the complexity of Interface design, and the passage of radio-frequency front-end can't be realized the effectively multiplexing of different systems similar frequency bands.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of multimode terminal, to solve complex interfaces, the more problem of redundant circuit in the existing scheme.
For addressing the above problem, the invention provides a kind of multimode terminal, comprise,
Base Band Unit, for the treatment of receiving i/q signal, and for the emission path provides i/q signal, this Base Band Unit is supported GSM, TD-SCDMA, FDD-LTE and TDD-LTE standard.
Radio frequency unit is used for supporting reception and the emission of GSM, TD-SCDMA, FDD-LTE and each frequency range radiofrequency signal of TDD-LTE standard.
Further, Base Band Unit comprises,
Digital baseband chip is for the treatment of the i/q signal that receives GSM, TD-SCDMA, FDD-LTE and TDD-LTE standard, for GSM, TD-SCDMA, FDD-LTE and TDD-LTE emission path provide i/q signal.
In the such scheme, the i/q signal that described digital baseband chip also receives for the treatment of FDD-LTE and TDD-LTE bypass; And the control signal of rf chip controlled, and power amplifier and radio-frequency (RF) switch are controlled.
Further, radio frequency unit comprises,
Rf chip is used for supporting reception and the emission of GSM, TD-SCDMA and each frequency range radiofrequency signal of LTE;
Power amplifier PA is used for amplifying GSM radiofrequency signal, TD-SCDMA radiofrequency signal, FDD-LTE radiofrequency signal, TDD-LTE radiofrequency signal;
Radio-frequency (RF) switch is used for radio frequency signal channels and switches;
One minute four tunnel radio circuit is used for the switching that GSM respectively receives frequency range;
Radio frequency duplexer is used for the isolation of emission path and the reception path of each frequency range of FDD-LTE.
In the such scheme, wherein, described rf chip comprises,
Emission path processing unit comprises digital interface, GSM digital data processing unit, emission local oscillation circuit, frequency converter, variable gain amplifier, digital to analog converter, the low pass filter of standard; The digital interface of its Plays is used for receiving the digital signal that digital baseband chip sends; The GSM digital data processing unit is for the treatment of the data of GSM digital modulator; The emission local oscillation circuit is used to frequency converter that local oscillation signal is provided; Digital to analog converter is used for converting digital IQ signal to the analog I/Q signal; Low pass filter carries out filtering to the analog I/Q signal; Frequency converter is used for IQ signal and the local oscillator of sending are carried out mixing; Variable gain amplifier is used for the output of amplifying or decay of signal to frequency converter output;
The clock processing unit is for rf chip provides the radio frequency processing clock.
In the such scheme, wherein, described power amplifier is 7, wherein, TD-SCDMA A frequency range, TD-SCDMA F-band and power amplifier of LTE Band39 emission path sharing, TD-SCDMA E frequency range and amplifier of LTE Band40 emission path sharing, UMTS Band1 and amplifier of LTE Band1 emission path sharing, UMTS Band2 and amplifier of LTE Band2 emission path sharing, UMTS Band5 and amplifier of LTE Band5 emission path sharing, UMTS Band8 and amplifier of LTE Band8 emission path sharing, UMTS Band13 and amplifier of LTE Band13 emission path sharing.
In the such scheme, wherein, described radio-frequency (RF) switch comprises the first radio-frequency (RF) switch and the second radio-frequency (RF) switch, and wherein, the first radio-frequency (RF) switch is used for reception and the emission switching of main road radiofrequency signal, and the second radio-frequency (RF) switch is used for the bypass passage and switches.
In the such scheme, wherein, described one minute four tunnel radio circuit is comprised of SAW (Surface Acoustic Wave) filter SAW or is comprised of radio-frequency (RF) switch and SAW.
Adopt technique scheme, overcome frequency range identical under the different IQ interface of different patterns, the different pattern and used different radio-frequency channels, reduce the complexity of IQ interface, reduced the radio-frequency channel number, can effectively reduce the volume that multimode is singly treated terminal.
Description of drawings
Accompanying drawing described herein is used to provide a further understanding of the present invention, consists of a part of the present invention, and illustrative examples of the present invention and explanation thereof are used for explaining the present invention, do not consist of improper restriction of the present invention.In the accompanying drawings:
Fig. 1 is that the radio frequency dual chip is realized the single band of LTE/UMTS/GSM multimode framework block diagram;
Fig. 2 is that the radio frequency single-chip is realized the single band of LTE/UMTS/GSM multimode framework block diagram;
Fig. 3 is the first embodiment of the invention structure chart;
Fig. 4 is the specific implementation figure of first embodiment of the invention;
Fig. 5 is emission path processing unit structure chart.
Embodiment
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearer, clear, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
As shown in Figure 3, it is the first embodiment of the invention structure chart, a kind of multimode terminal is provided, support FDD_LTE/TDD_LTE/TD-SCDMA/GSM, use different radio-frequency channels to solve frequency range identical under the different IQ interface of patterns different in the present multimode terminal, the different pattern, reduce the complexity of IQ interface, reduced the radio-frequency channel number, can effectively reduce the volume that multimode is singly treated terminal.
This multimode terminal comprises:
Base Band Unit, for the treatment of receiving i/q signal, and for the emission path provides i/q signal, this Base Band Unit is supported GSM, TD-SCDMA, WCDMA, FDD-LTE and TDD-LTE standard.
Radio frequency unit is used for supporting reception and the emission of GSM, TD-SCDMA, WCDMA, FDD-LTE and each frequency range radiofrequency signal of TDD-LTE standard.
Antenna is used for transmitting and receiving wireless signal.
As shown in Figure 4, be the specific implementation figure of first embodiment of the invention, wherein, Base Band Unit comprises,
Digital baseband chip Digital Baseband, the i/q signal that receives for the treatment of GSM, TD-SCDMA, WCDMA, FDD-LTE and TDD-LTE, for GSM, TD-SCDMA, WCDMA, FDD-LTE and TDD-LTE emission path provide i/q signal, and process the i/q signal that FDD-LTE and TDD-LTE bypass receive.This digital baseband chip is supported DigRF v4 interface specification, the control signals such as rf chip reset signal, internal register are controlled, to the power amplifier of radio-frequency front-end enable, the logic of pattern and radio-frequency (RF) switch etc. controls.
Radio frequency unit comprises,
Rf chip RF Transceiver is used for supporting reception and the emission of GSM, TD-SCDMA, WCDMA and each frequency range radiofrequency signal of LTE.Support the standard digital interface standard, the radio frequency band of support comprises GSM850, GSM900, DCS1800, PCS1900, TD-SCDMA A frequency range, TD-SCDMA F-band (LTE Band39), TD-SCDMA E frequency range (LTE Band40), UMTS Band1 (LTE Band1), UMTS Band2 (LTE Band2), UMTS Band5 (LTE Band5), UMTS Band8 (LTE Band8), UMTS Band13 (LTE Band13), LTE Band7, LTE Band38.GSM receives and the filtering bandwidth of emission path is 88KHz, TD-SCDMA receive and the filtering bandwidth support 720KHz of transmission channel 1.44MHz 2.16MHz, the filtering bandwidth of each transceiver channel of LTE support 630KHz 1.35MHz 2.3MHz 4.6MHz 6.9MHz 9.2MHz, the filtering bandwidth of each transceiver channel of WCDMA LTE support 700KHz 1.5MHz 2.5MHz 5MHz 7.5MHz 10MHz.Each receive path has low noise factor, large gain control range, the requirement that the gain step size satisfies system's emission, receive path has large inhibition ability to out of band signal, transmission channel has large gain control range, and transmission channel gain step size satisfies the requirement of system.
Power amplifier PA is used for amplifying GSM radiofrequency signal, TD-SCDMA radiofrequency signal, FDD-LTE radiofrequency signal, TDD-LTE radiofrequency signal.In this radio frequency unit, TD-SCDMA A frequency range, power amplifier of TD-SCDMA F-band and LTE Band39 (frequency band 39) emission path sharing, TD-SCDMA E frequency range and amplifier of LTE Band40 emission path sharing, UMTS Band1 and amplifier of LTE Band1 emission path sharing, UMTS Band2 and amplifier of LTE Band2 emission path sharing, UMTS Band5 and amplifier of LTE Band5 emission path sharing, UMTS Band8 and amplifier of LTE Band8 emission path sharing, UMTS Band13 and amplifier of LTE Band13 emission path sharing.
Radio-frequency (RF) switch, wherein the first radio-frequency (RF) switch is used for reception and the emission switching of main road radiofrequency signal, and the second radio-frequency (RF) switch is used for the bypass passage and switches.The radio-frequency (RF) switch of main road requires low insertion loss, each passage large isolation to be arranged, can support the transmitting power that GSM is large that the low-pass filtering function is arranged in the transmission channel of GSM.The insertion loss that the bypass radio-frequency (RF) switch is low, each passage has large isolation, if bypass is supported emission function, the transmission channel of bypass radio-frequency (RF) switch also will be supported the requirement of high-power emission.
One minute four tunnel radio circuit is used for the switching that GSM respectively receives frequency range.This device can be comprised of a plurality of SAW (Surface Acoustic Wave) filter SAW, also can be comprised of radio-frequency (RF) switch and SAW.Similarly device also can be used in TD-SCDMA, TDD-LTE emission port, is used for reducing the complexity of radio-frequency transmissions path.
Radio frequency duplexer Duplexer is used for the isolation of emission path and the reception path of each frequency range of FDD.The passage that transmits and receives of duplexer has low insertion loss, and transmission channel and receive path have large isolation, makes the interference signal of the transmit frequency band that receiving terminal receives and the requirement that the co-channel interference signal satisfies transceiving chip.
Rf chip comprises emission path processing unit, clock processing unit, wherein,
As shown in Figure 5, be emission path processing unit structure chart, described emission path processing unit comprises the modules such as the digital interface, GSM digital data processing unit, emission local oscillation circuit, frequency converter, variable gain amplifier, digital to analog converter, low pass filter of standard.The digital interface of standard is used for receiving the digital signal that digital baseband chip sends, the GSM digital data processing unit is for the treatment of the data of GSM digital modulator, the emission local oscillation circuit is mainly frequency converter provides local oscillation signal, digital to analog converter converts digital IQ signal to the analog I/Q signal, low pass filter carries out filtering to the analog I/Q signal, frequency converter carries out mixing to IQ signal and the local oscillator of sending, the signal that variable gain amplifier is exported the frequency converter output of amplifying or decay.
The clock processing unit is for rf chip provides the radio frequency processing clock.
The present invention is by providing a kind of new FDD_LTE/TDD_LTE/TD-SCDMA/GSM multimode singly to treat terminal, the present invention has overcome frequency range identical under the different IQ interface of different patterns, the different pattern and has used different radio-frequency channels, reduced the complexity of IQ interface, reduce the radio-frequency channel number, can effectively reduce the volume that multimode is singly treated terminal.
Above-mentioned explanation illustrates and has described a preferred embodiment of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to the disclosed form of this paper, should not regard the eliminating to other embodiment as, and can be used for various other combinations, modification and environment, and can in invention contemplated scope described herein, change by technology or the knowledge of above-mentioned instruction or association area.And the change that those skilled in the art carry out and variation do not break away from the spirit and scope of the present invention, then all should be in the protection range of claims of the present invention.

Claims (8)

1. a multimode terminal is characterized in that, comprise,
Base Band Unit, for the treatment of receiving i/q signal, and for the emission path provides i/q signal, this Base Band Unit is supported GSM, TD-SCDMA, FDD-LTE and TDD-LTE standard.
Radio frequency unit is used for supporting reception and the emission of GSM, TD-SCDMA, FDD-LTE and each frequency range radiofrequency signal of TDD-LTE standard.
2. terminal according to claim 1 is characterized in that, Base Band Unit comprises,
Digital baseband chip is for the treatment of the i/q signal that receives GSM, TD-SCDMA, FDD-LTE and TDD-LTE standard, for GSM, TD-SCDMA, FDD-LTE and TDD-LTE emission path provide i/q signal.
3. terminal according to claim 2 is characterized in that,
The i/q signal that described digital baseband chip also receives for the treatment of FDD-LTE and TDD-LTE bypass; And the control signal of rf chip controlled, and power amplifier and radio-frequency (RF) switch are controlled.
4. terminal according to claim 1 is characterized in that, radio frequency unit comprises,
Rf chip is used for supporting reception and the emission of GSM, TD-SCDMA and each frequency range radiofrequency signal of LTE;
Power amplifier PA is used for amplifying GSM radiofrequency signal, TD-SCDMA radiofrequency signal, FDD-LTE radiofrequency signal, TDD-LTE radiofrequency signal;
Radio-frequency (RF) switch is used for radio frequency signal channels and switches;
One minute four tunnel radio circuit is used for the switching that GSM respectively receives frequency range;
Radio frequency duplexer is used for the isolation of emission path and the reception path of each frequency range of FDD-LTE.
5. terminal according to claim 4 is characterized in that, described rf chip comprises,
Emission path processing unit comprises digital interface, GSM digital data processing unit, emission local oscillation circuit, frequency converter, variable gain amplifier, digital to analog converter, the low pass filter of standard; The digital interface of its Plays is used for receiving the digital signal that digital baseband chip sends; The GSM digital data processing unit is for the treatment of the data of GSM digital modulator; The emission local oscillation circuit is used to frequency converter that local oscillation signal is provided; Digital to analog converter is used for converting digital IQ signal to the analog I/Q signal; Low pass filter carries out filtering to the analog I/Q signal; Frequency converter is used for IQ signal and the local oscillator of sending are carried out mixing; Variable gain amplifier is used for the output of amplifying or decay of signal to frequency converter output;
The clock processing unit is for rf chip provides the radio frequency processing clock.
6. terminal according to claim 4, it is characterized in that, described power amplifier is 7, wherein, TD-SCDMA A frequency range, TD-SCDMA F-band and power amplifier of LTE Band39 emission path sharing, TD-SCDMA E frequency range and amplifier of LTE Band40 emission path sharing, UMTS Band1 and amplifier of LTE Band1 emission path sharing, UMTS Band2 and amplifier of LTE Band2 emission path sharing, UMTS Band5 and amplifier of LTE Band5 emission path sharing, UMTS Band8 and amplifier of LTE Band8 emission path sharing, UMTS Band13 and amplifier of LTE Band13 emission path sharing.
7. terminal according to claim 4, it is characterized in that described radio-frequency (RF) switch comprises the first radio-frequency (RF) switch and the second radio-frequency (RF) switch, wherein, the first radio-frequency (RF) switch is used for reception and the emission switching of main road radiofrequency signal, and the second radio-frequency (RF) switch is used for the bypass passage and switches.
8. terminal according to claim 4 is characterized in that, described one minute four tunnel radio circuit is comprised of SAW (Surface Acoustic Wave) filter SAW or is comprised of radio-frequency (RF) switch and SAW.
CN201210118736XA 2012-04-20 2012-04-20 Multi-mode terminal Pending CN103379670A (en)

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CN104468069A (en) * 2014-11-24 2015-03-25 东南大学 TDD/FDD dual-mode reconfigurable wireless communication system and communication method
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CN109041097A (en) * 2018-08-30 2018-12-18 河南信安通信技术股份有限公司 Hot spot acquires equipment
WO2020107299A1 (en) * 2018-11-29 2020-06-04 唐山曹妃甸联城科技有限公司 Multi-mode wireless terminal with tdd mode
WO2020150857A1 (en) * 2019-01-21 2020-07-30 华为技术有限公司 Vehicle-mounted antenna system and communication method used for the vehicle-mounted antenna system

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WO2020107299A1 (en) * 2018-11-29 2020-06-04 唐山曹妃甸联城科技有限公司 Multi-mode wireless terminal with tdd mode
WO2020150857A1 (en) * 2019-01-21 2020-07-30 华为技术有限公司 Vehicle-mounted antenna system and communication method used for the vehicle-mounted antenna system
CN112189378A (en) * 2019-01-21 2021-01-05 华为技术有限公司 Vehicle-mounted antenna system and communication method applied to same
CN112189378B (en) * 2019-01-21 2022-04-12 华为技术有限公司 Vehicle-mounted antenna system and communication method applied to same

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