JP2009135458A5

JP2009135458A5 -

Info

Publication number: JP2009135458A5
Application number: JP2008273591A
Authority: JP
Filing date: 2008-10-23
Publication date: 2010-05-13
Anticipated expiration: 2028-10-23

Claims

An insulating resin layer;
A wiring layer provided on one surface of the insulating resin layer;
Protruding electrodes provided on the surface of the insulating resin layer side of the wiring layer;
Covering the top surface of the protruding electrode and the region of the side surface that is continuous with the top surface excluding the region in contact with the wiring layer, a covering portion made of a metal layer,
An element mounting board comprising:

Other covering portions which are discontinuous with the covering portion and cover at least a part from the base end portion including the base end portion where the surface of the wiring layer and the side surface of the protruding electrode are in contact with each other, and are made of a metal layer The device mounting substrate according to claim 1, comprising:

The element mounting substrate according to claim 1, wherein the metal layer has a yield stress that is greater than 40% and less than or equal to 100% of the yield stress of the protruding electrode.

The metal layer has a yield stress of not less than 50% and not more than 75% of the yield stress of the protruding electrode, and the covering portion extends from the top surface of the protruding electrode to the wiring layer on the side surface of the protruding electrode. 3. The element mounting substrate according to claim 1, wherein a region of ½ or less of the height to the surface on the side where the protruding electrode is provided is covered.

An insulating resin layer;
A wiring layer provided on one surface of the insulating resin layer;
Protruding electrodes provided on the surface of the insulating resin layer side of the wiring layer;
With
The element mounting board according to claim 1, wherein the protruding electrode has a step on the side surface such that the wiring layer side becomes narrower.

The protruding electrode has a step which is thicker on the wiring layer side on the wiring layer side than the step on a side surface, and a region thickened by the step extends to the wiring layer. The element mounting substrate according to claim 5.

The device mounting board according to any one of claims 1 to 6,
A semiconductor element provided with an element electrode facing the protruding electrode of the element mounting substrate;
An insulating resin layer provided between the wiring layer and the semiconductor element;
With
The semiconductor module, wherein the protruding electrode penetrates the insulating resin layer, and the protruding electrode and the element electrode are electrically connected.

The semiconductor module according to claim 7, wherein the insulating resin layer causes plastic flow by pressurization.

Preparing a metal plate provided with protruding electrodes;
A covering step of covering the top surface of the protruding electrode and a region continuous with the top surface excluding a region in contact with the metal plate among side surfaces using a metal;
The metal plate on which the protruding electrode is formed and a semiconductor element on which an element electrode corresponding to the protruding electrode is pressed through an insulating resin layer, and the protruding electrode penetrates the insulating resin layer. A crimping step for electrically connecting the protruding electrode and the element electrode;
Selectively removing the metal plate to form a wiring layer;
A method for manufacturing a semiconductor module, comprising:

Preparing a metal plate provided with protruding electrodes;
A covering step of covering the top surface of the protruding electrode and a region continuous with the top surface excluding a region in contact with the metal plate among side surfaces using a metal;
Laminating an insulating resin layer on the metal plate on which the protruding electrode is formed so that the metal covering the protruding electrode is exposed;
Crimping a semiconductor element provided with an element electrode corresponding to the protruding electrode to a metal plate on which the insulating resin layer is laminated, and electrically connecting the protruding electrode and the element electrode;
Selectively removing the metal plate to form a wiring layer;
A method for manufacturing a semiconductor module, comprising:

Preparing a metal plate provided with protruding electrodes;
A covering step of covering the top surface of the protruding electrode and a region continuous with the top surface excluding a region in contact with the metal plate among side surfaces using a metal;
Laminating an insulating resin layer on the metal plate on which the protruding electrode is formed so as to cover the metal covering the protruding electrode;
Etching the insulating resin layer so that the metal covering the protruding electrode is exposed;
Crimping a semiconductor element provided with an element electrode corresponding to the protruding electrode to a metal plate on which the insulating resin layer is formed, and electrically connecting the protruding electrode and the element electrode;
Selectively removing the metal plate to form a wiring layer;
A method for manufacturing a semiconductor module, comprising:

12. The semiconductor module according to claim 9 , wherein, in the covering step, the metal has a yield stress that is greater than 40% and less than or equal to 100% of the yield stress of the protruding electrode. Production method.

In the covering step, the metal has a yield stress of 50% to 75% of a yield stress of the bump electrode, and a side of the wiring layer on which the bump electrode is provided from the top surface of the bump electrode the method as claimed in any one of claims 9 to 11, characterized in that covering less than half of the area of to the surface height.

The insulating resin layer is
The method as claimed in any one of claims 9 to 13, characterized in that causing plastic flow by pressure.