JP2009130205A - Light-emitting device, substrate device, and method of manufacturing light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which can be improved in yield by preventing a short circuit between a pair of electrode patterns formed on a substrate, and to provide a substrate device for the light-emitting device and the method of manufacturing the light-emitting device. <P>SOLUTION: The light-emitting device has an LED element 12, the substrate 11 on the top surface of which the LED element 12 is mounted and which has two stepped portions 11c formed from the lower part of two opposite side faces to a lower surface, a top surface pattern 14 formed on the top surface of the substrate 11, a sealing portion 13 sealing the LED element 12 and top surface pattern 14, the pair of electrode patterns 16 formed at the stepped portions 11c apart from corner portions of the lower surface of the substrate 11, and a via pattern 15 connecting the top surface pattern 14 and electrode pattern 16 to each other, and the electrode patterns 16 are prevented from short-circuiting owing to sagging of metal during dicing of the substrate 11. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate device in which an LED element is mounted on an upper surface and an electrode pattern is formed on a lower surface, a light emitting device including the substrate device, and a method for manufacturing the light emitting device.

  Conventionally, a light-emitting device that seals an LED element with a resin is known (see, for example, Patent Document 1). The light-emitting device described in Patent Document 1 is formed by laminating a plurality of insulating layers, and emits light from a bottom surface of the concave portion to a lower surface of the insulating substrate on a substantially rectangular parallelepiped insulating base having a concave portion that houses and mounts the light-emitting element on the upper surface. A wiring layer to which the electrode of the element is electrically connected is formed. Further, a step portion formed so as to be cut out in an L shape in plan view between the lower surface and the side surface of the insulating base is provided at a diagonal corner portion of the lower surface of the insulating base. A side conductor having a wiring layer electrically connected thereto is formed.

A light-emitting device that seals an LED element with glass has also been proposed (see, for example, Patent Document 2). The light-emitting device described in Patent Document 2 is formed on a flip-chip type GaN-based LED element, a multi-layered substrate formed in a square shape and mounting a GaN-based LED element on the upper surface, and the upper surface and layers of the substrate. A circuit pattern, a bump for electrically connecting the GaN-based LED element and the circuit pattern, a sealing portion that seals the GaN-based LED element and is bonded to the substrate and made of glass, and layers at four corners on the lower surface of the substrate And a bottom circuit pattern exposed from the inner intermediate layer. That is, the corners of the substrate are formed thinner than the other portions, the four corners of the lower surface of the substrate are formed in steps, and the bottom circuit pattern is formed in the steps.
JP 2004-207542 A International Publication No. 04/082036 Pamphlet

  However, since the light emitting devices described in Patent Document 1 and Patent Document 2 both have patterns that form electrodes at the corners of the lower surface of the substrate, when the substrate is divided by dicing when manufacturing the light emitting device, There is a risk of short-circuiting between the patterns due to sagging of the metal forming the pattern.

  The present invention has been made in view of the above circumstances, and an object thereof is to prevent a short circuit between a pair of electrode patterns formed on a substrate and improve the yield, and the light emitting device. And a method of manufacturing a light emitting device.

  According to the present invention, an LED element, a top surface formed in a square shape when viewed from above, and an upper surface on which the LED element is mounted, and two stepped portions formed respectively from the lower part to the lower surface of two opposing side surfaces, , A top surface pattern formed on the top surface of the substrate and electrically connected to the LED element, a sealing portion for sealing the LED element and the top surface pattern, and the bottom surface of the substrate A pair of electrode patterns formed on the two stepped portions of the substrate, spaced apart from each corner, and extending in the thickness direction of the substrate inside the substrate, the upper surface pattern and the electrode pattern being A light emitting device including a via pattern to be connected is provided.

  In the light emitting device, the upper surface of the substrate is formed flat, the sealing portion is entirely bonded to the upper surface of the substrate, and the upper surface pattern is formed apart from an outer edge of the upper surface of the substrate. It is preferable.

  In the light emitting device, it is preferable that the substrate is made of ceramic and the sealing portion is made of glass.

  In addition, according to the present invention, the substrate is formed in a quadrangular shape when viewed from above, and has a flat upper surface, and two stepped portions respectively formed from the lower portion to the lower surface of two opposing side surfaces. A pair of upper surface patterns formed on the upper surface of the substrate and spaced apart from the outer edge of the upper surface, and formed on the two stepped portions of the substrate, spaced apart from each corner of the lower surface of the substrate. And a via pattern extending in the thickness direction of the substrate inside the substrate and connecting the upper surface pattern and the electrode pattern.

  According to the present invention, in manufacturing the light emitting device, a pattern forming step of forming the upper surface pattern, the electrode pattern, and the via pattern on a connection substrate in which a plurality of the substrates are connected; And a dicing step of dividing the connection substrate on which the electrode pattern and the via pattern are formed by a dicer.

  According to the present invention, in manufacturing the light emitting device, a pattern forming step of forming the upper surface pattern, the electrode pattern, and the via pattern on a connection substrate in which a plurality of the substrates are connected; An element mounting step for mounting the LED element on the connection substrate on which the electrode pattern and the via pattern are formed, and hot pressing a glass formed in a plate shape on the connection substrate on which the LED element is mounted A method for manufacturing a light emitting device, comprising: a glass sealing step for sealing the LED element on the connection substrate, and a dicing step for dividing the connection substrate on which the glass has been bonded by a dicer. Provided.

  According to the present invention, it is possible to prevent a short circuit between a pair of electrode patterns formed on a substrate and improve a yield.

  1 to 6 show an embodiment of the present invention, and FIG. 1 is a top view of a light emitting device. In each figure, for the sake of explanation, there are parts that are illustrated with different dimensions and dimensions of the actual apparatus.

  As shown in FIG. 1, the light emitting device 1 includes an LED element 12 made of a flip-chip GaN-based semiconductor material, a ceramic substrate 11 on which the LED element 12 is mounted, and an LED element formed on the upper surface of the ceramic substrate 11. 12 is provided with a top surface pattern 14 for supplying power to 12 and a sealing portion 13 for sealing the LED element 12 and the top surface pattern 14 on the ceramic substrate 11. In the present embodiment, a total of nine LED elements 12 arranged in three rows in the front and rear and right and left are mounted on one light emitting device 1. Each LED element 12 is electrically connected in series by the upper surface pattern 14.

The LED element 12 includes a buffer layer, an n-type layer, an MQW layer, and a p-type layer by epitaxially growing a group III nitride semiconductor on the surface of a growth substrate made of sapphire (Al ₂ O ₃ ). They are formed in this order. This LED element 12 is epitaxially grown at 700 ° C. or higher, its heat-resistant temperature is 600 ° C. or higher, and is stable with respect to the processing temperature in the sealing process using the low melting point heat-sealing glass. In addition, the LED element 12 includes a p-side electrode provided on the surface of the p-type layer and a p-side pad electrode formed on the p-side electrode, and a part thereof is etched from the p-type layer to the n-type layer. The n-side electrode is formed on the exposed n-type layer. Bumps 18 (not shown in FIG. 1) are formed on the p-side pad electrode and the n-side electrode, respectively. In the present embodiment, the LED element 12 has a thickness of 100 μm and a 346 μm square.

The ceramic substrate 11 is made of a polycrystalline sintered material of alumina (Al ₂ O ₃ ) and is formed in a square shape when viewed from above. In the present embodiment, the ceramic substrate 11 is formed in a square shape in a top view with a thickness direction (vertical direction) dimension of 0.15 mm and a side dimension of 3.15 mm.

2 is a cross-sectional view taken along the line AA in FIG.
As shown in FIG. 2, the ceramic substrate 11 has a general part 11a having a thickness of 0.15 mm and a thin part 11b formed thinner than the general part 11a, and the upper surface is flat over the entire surface. Is formed. In the present embodiment, each thin portion 11b is formed on the outer edge side of the ceramic substrate 11 in a predetermined direction (left-right direction in FIG. 2). The general portion 11a and each thin portion 11b are formed so that the upper surfaces thereof are flush with each other, and a stepped portion 11c having a vertical surface extending vertically is formed at a boundary portion between the general portion 11a and each thin portion 11b on the lower surface of the ceramic substrate 11. It is formed. That is, each stepped portion 11 c is formed from the lower part to the lower surface of two opposing side surfaces of the ceramic substrate 11. Although the formation method of each thin part 11b is arbitrary, for example, it can form by exposing the intermediate | middle layer by making the ceramic substrate 11 into a multilayer structure.

  As shown in FIG. 1, the upper surface pattern 14 is electrically connected to the LED element 12 and is electrically connected to a pair of electrode patterns 16 via a via pattern 15 extending in the thickness direction of the ceramic substrate 11. The upper surface pattern 14 is formed apart from the outer edge of the upper surface of the ceramic substrate 11. The electrode pattern 16 is formed on the lower surface of the ceramic substrate 11 and is electrically connected to, for example, an external mounting substrate 31. The electrode pattern 16 is formed on both ends of the ceramic substrate 11 in a predetermined direction, one of which is a positive electrode and the other is a negative electrode. A heat radiation pattern 17 is formed between the electrode patterns 16 on the lower surface of the ceramic substrate 11.

  The upper surface pattern 14, the via pattern 15, the electrode pattern 16, and the heat dissipation pattern 17 are made of a conductive metal. In the present embodiment, the upper surface pattern 14, the electrode pattern 16, and the heat dissipation pattern 17 are formed of a W layer formed on the surface of the ceramic substrate 11, a thin Ni plating layer that covers the surface of the W layer, and a Ni plating layer. A thin Ag-plated layer covering the surface. The via pattern 15 is made of W and is provided in a via hole penetrating the ceramic substrate 11 in the thickness direction.

The sealing portion 13 is made of ZnO—B ₂ O ₃ —SiO ₂ —Nb ₂ O ₅ —Na ₂ O—Li ₂ O-based heat fusion glass. The composition of the glass is not limited to this. For example, the heat-sealing glass may not contain Li ₂ O, or may contain ZrO ₂ , TiO ₂ or the like as an optional component. Good. As shown in FIG. 2, the sealing portion 13 is joined to the ceramic substrate 11 entirely, is formed in a rectangular parallelepiped shape on the ceramic substrate 11, and the height from the upper surface of the ceramic substrate 11 is 0.5 mm. It has become. The side surface of the sealing portion 13 is formed by cutting a plate glass bonded to the ceramic substrate 11 by hot pressing together with the ceramic substrate 11 with a dicer. The upper surface of the sealing portion 13 is one surface of a plate glass bonded to the ceramic substrate 11 by hot pressing. This heat-fusible glass has a glass transition temperature (Tg) of 490 ° C., a yield point (At) of 520 ° C., a coefficient of thermal expansion (α) at 100 ° C. to 300 ° C. of 6 × 10 ⁻⁶ / ° C., and a refractive index. It is 1.7.

  Further, the phosphor 13 a is dispersed in the sealing portion 13. The phosphor 13a is a yellow phosphor that emits yellow light having a peak wavelength in a yellow region when excited by blue light emitted from the MQW layer. In the present embodiment, a YAG (Yttrium Aluminum Garnet) phosphor is used as the phosphor 13a. The phosphor 13a may be a silicate phosphor or a mixture of YAG and silicate phosphor at a predetermined ratio.

As shown in FIG. 2, the mounting substrate 31 includes a substrate body 32 made of metal, an insulating layer 33 made of resin formed on the substrate body 32, a circuit pattern 34 made of metal formed on the insulating layer 33, have. The substrate body 32 is made of, for example, copper (thermal conductivity: 380 W · m ⁻¹ · K ⁻¹ ), and is connected via the heat radiation pattern 17 of each glass-sealed LED 2 and the solder material 36. The insulating layer 33 is made of, for example, a polyimide resin, an epoxy resin, or the like, and insulates the conductive substrate body 32 from the circuit pattern 34. The circuit pattern 34 is made of, for example, copper having a thin film of gold on the surface (upper surface), and is connected to the electrode pattern 16 of each glass-sealed LED 2 via a solder material 37. FIG. 2 shows an example of a mounting substrate 31 on which the light emitting device 1 is mounted, and the mounting substrate 31 on which the light emitting device 1 is mounted can be arbitrarily changed. For example, the mounting substrate 31 may include a white resist layer 35 that covers the circuit pattern 34, or may be a substrate based on a metal other than copper, such as an aluminum base substrate. . Further, the mounting substrate 31 may be a flexible substrate based on polyimide or liquid crystal polymer.

FIG. 3 is a bottom view of the light emitting device.
As shown in FIG. 3, each electrode pattern 16 and heat dissipation pattern 17 are formed in a rectangular shape in plan view. Each electrode pattern 16 is formed on a separate stepped portion 11 c of the ceramic substrate 11. In addition, each electrode pattern 16 is spaced from each corner of the lower surface of the ceramic substrate 11 and is formed on the center side of each side portion of the lower surface. Further, the heat radiation pattern 17 is formed at intervals from each electrode pattern 16, and extends across the outer edges of the opposing side portions where the electrode patterns 16 are not formed.

  In the light emitting device 1 configured as described above, when a voltage is applied to each electrode pattern 16 through the mounting substrate 31, blue light is emitted from each LED element 12. A part of the blue light is converted to yellow by the phosphor 13a, and white light is emitted from the light emitting device 1 by a combination of blue light and yellow light. Further, the heat generated in each LED element 12 is transmitted to the substrate body 32 via the heat dissipation pattern 17.

Here, the sealing portion 13 may be made of resin instead of glass. However, since resin sealing causes deterioration such as yellowing due to light emitted from the LED element 12 and heat, a decrease in light amount and chromaticity change over time. Occurs. Further, since the thermal expansion coefficient of the encapsulant is large (for example, 150 to 200 × 10 ⁻⁶ / ° C. for silicone), expansion and contraction due to temperature change occurs, and thus disconnection occurs at the electrical connection portion of the LED element 12. easy. For this reason, glass sealing like this embodiment is preferable, there is no deterioration with respect to light and heat, and since a thermal expansion coefficient is a value comparatively close to LED element 12, it is hard to produce an electrical disconnection. The glass is not limited to a glass having a low melting point, and may be, for example, a sol-gel glass formed using an alkoxide as a starting material.

A method for manufacturing the light emitting device 1 will be described below with reference to the process explanatory diagram of FIG.
First, a ZnO—B ₂ O ₃ —SiO ₂ —Nb ₂ O ₅ —Na ₂ O—Li ₂ O-based thermally fused glass is pulverized to produce a glass powder having an average particle size of 30 μm. This is mixed with a phosphor 13a made of YAG having an average particle size of 10 μm to produce a mixed powder in which the phosphor 13a is uniformly dispersed in a glass powder (mixing step).

  After the mixed powder generated in the mixing step is melted while applying a load, the mixed powder is solidified to generate the phosphor-dispersed glass 43 (glass generation step). The produced phosphor dispersed glass 43 is processed into a plate shape corresponding to the thickness of the glass sealing portion 13 (plate processing step).

FIG. 5 is a bottom view of the connection substrate showing a state before the ceramic substrate of each light emitting device is divided by the dicer.
As shown in FIG. 5, via holes and stepped portions 11c are formed separately from the phosphor-dispersed glass 43, and the connection substrates 41 in a state where the ceramic substrates 11 of the plurality of light emitting devices 1 are connected to each other at the side portions. Prepare. In the present embodiment, since the stepped portions 11 c are formed on opposite sides of the ceramic substrate 11, the two stepped portions 11 c are integrally formed at the boundary portion of the adjacent ceramic substrates 11 in the connection substrate 41. Is formed. Next, W paste is screen-printed on the connection substrate 41 in accordance with the upper surface pattern 14, the via pattern 15, the electrode pattern 16, and the heat dissipation pattern 17. After that, the connecting substrate 41 printed with the W paste is heat-treated at a temperature of about 1000 ° C. to burn W onto the connecting substrate 41, and further, Ni plating and Au plating are performed on the W to form the upper surface pattern 14 and the via pattern 15. Then, the electrode pattern 16 and the heat radiation pattern 17 are formed (pattern formation step).

  Next, the plurality of LED elements 2 are electrically joined to the upper surface pattern 14 of the ceramic substrate 11 by bumps 18 made of, for example, Au (element mounting process). In the present embodiment, bump bonding is performed at a total of two points, one point on the p side and one point on the n side.

FIG. 6 is a schematic explanatory view showing a state of hot pressing.
Next, the connecting substrate 41 on which the LED elements 12 are mounted is set in the lower mold 91, and the plate-like phosphor-dispersed glass 43 is set in the upper mold 92. A heater is disposed in each of the lower mold 91 and the upper mold 92, and the temperatures of the molds 91 and 92 are independently adjusted. And as shown in FIG. 6, the fluorescent substance dispersion | distribution glass 43 is piled up on the upper surface of the substantially flat connection board | substrate 41, the lower metal mold | die 91 and the upper metal mold | die 92 are pressurized, and a hot press process is performed in nitrogen atmosphere. Thereby, the phosphor dispersion glass 43 is fused to the connection substrate 41 on which the LED elements 12 are mounted, and the LED elements 12 are sealed on the connection substrate 41 by the phosphor dispersion glass 43 (glass sealing step). In the present embodiment, the processing is performed at a pressure of about ²⁰ to 40 kgf / cm ² . Here, the hot pressing process may be performed in an inert atmosphere with respect to each member, and may be performed in, for example, a vacuum in addition to the nitrogen atmosphere.

As a result, the phosphor-dispersed glass 43 is bonded to the connecting substrate 41 via the oxide contained therein. Here, it is preferable that the viscosity of the heat-fusible glass in the hot press processing is 10 ⁵ to 10 ⁷ poise. By setting this viscosity range, it is possible to improve the yield by suppressing bonding of the glass to the upper mold 92 due to low viscosity, glass outflow, etc., and high viscosity. It is possible to suppress a decrease in bonding strength of glass to the connecting substrate 41, an increase in the amount of crushing of each bump 18, and the like.

  The connection substrate 41 is made of polycrystalline alumina and has a rough surface, and the interface of the bonding portion on the phosphor-dispersed glass 43 side is formed in a rough shape along the surface of the connection substrate 41. This is realized, for example, by applying pressure during hot press processing and processing in a reduced-pressure atmosphere lower than atmospheric pressure. Here, as long as the glass is sufficiently inserted into the dent of the roughened polycrystalline alumina, the pressure condition at the time of hot pressing and the pressure reducing condition of the atmosphere are arbitrary. For example, the pressure and atmosphere at the time of hot pressing It goes without saying that only one of the reduced pressures may be processed. As a result, there is no gap between the sealing portion 13 and the ceramic substrate 11, and the bonding strength between the sealing portion 13 and the ceramic substrate 11 can be ensured.

  Here, in order to shorten the cycle time of hot pressing, a preheating stage is provided before pressing to preliminarily heat the phosphor-dispersed glass 43, or a slow cooling stage is provided after pressing to cool the phosphor-dispersing glass 43. May be controlled. Moreover, it is also possible to press in a preheating stage and a slow cooling stage, and the process at the time of a hot press process can be changed suitably.

  Through the above steps, an intermediate body 51 as shown in FIG. 6 in a state where a plurality of light emitting devices 1 are connected in the lateral direction is manufactured. Thereafter, the connecting substrate 41 integrated with the phosphor dispersed glass 43 is set on a dicer, and the phosphor dispersed glass 43 and the connecting substrate 41 are divided for each unit of the light emitting device 1 to form the light emitting device 1. Completed (dicing process). At this time, both the sealing portion 13 and the ceramic substrate 11 are cut by the dicer, so that the side surfaces of the ceramic substrate 11 and the sealing portion 13 are flush with each other.

  In the dicing process, the intermediate body 51 is divided into two different directions to produce a plurality of light emitting devices 1 having a quadrangular shape when viewed from above. Dicing in one of two different directions forms two opposing sides where the electrode pattern 16 is formed on the ceramic substrate 11, and forming another opposing side by dicing in the other direction.

  Here, a pair of electrode patterns 16 are separately formed on opposite sides of the ceramic substrate 11. Therefore, even if the metal sag forming the electrode pattern 16 occurs when dividing in one direction, the different electrode patterns 16 on one ceramic substrate 11 are not short-circuited. And since the electrode pattern 16 of each light-emitting device 1 is formed apart from the corner | angular part of the ceramic substrate 11, when dividing | segmenting to another direction, a dicer does not contact the electrode pattern 16 (refer FIG. 5). . Thereby, when dividing | segmenting to another direction, the metal sagging which makes the electrode pattern 16 does not arise, but the short circuit of each electrode pattern 16 can be prevented reliably.

  Thus, according to this embodiment, it is possible to reliably prevent a short circuit between the electrode patterns 16 of the light emitting device 1 and improve the yield of the light emitting device 1.

  Further, since the stepped electrode pattern 16 is formed on the lower surface of the ceramic substrate 11, the solder material 37 is bonded to the vertical plane in addition to the horizontal plane of the electrode pattern 16 (see FIG. 2), and the bonding strength to the mounting substrate 31. Can be dramatically improved. Accordingly, it is possible to suppress the light emitting device 1 from falling off the mounting substrate 31.

  Moreover, since the upper surface pattern 14 is formed away from the outer edge of the ceramic substrate 11, the ceramic substrate 11 is bonded to the outer periphery by chemical bonding via the sealing portion 13 and oxide. As a result, when an excessive load is applied from the outside, such as when the upper surface pattern 14 is formed on at least a part of the outer edge of the ceramic substrate 11, the upper surface pattern 14 and the sealing portion 13 having a relatively small bonding force. The sealing portion 13 is not peeled off from the ceramic substrate 11 starting from the interface. Moreover, gas, liquid, etc. do not penetrate | invade from the exterior through the joining interface of the ceramic substrate 11 and the sealing part 13, and favorable weather resistance can be obtained.

  Furthermore, the sealing part 13 is made of glass having a thermal expansion coefficient closer to that of ceramic than resin, so that after bonding at high temperature by hot pressing, adhesion failure such as peeling and cracking hardly occurs even at room temperature or low temperature. . Here, the glass is likely to crack in the tensile stress, but is not likely to crack in the compressive stress, and the glass of the sealing portion 13 preferably has a smaller thermal expansion coefficient than the ceramic substrate 11.

  Moreover, since each LED element 12 can make a wire unnecessary by carrying out flip mounting, it does not produce the malfunction of an electrode also with respect to the sealing process by the glass of a high viscosity state. When sealing a face-up type LED element in which the electrode of the LED element 12 and the upper surface pattern 14 of the ceramic substrate 11 are electrically connected by a wire, the wire may be crushed or deformed during glass sealing. In addition, no wire bonding space is required, and interface peeling does not occur even when bonding is performed in a small space due to the strong bonding between glass and ceramic. Therefore, the light emitting device 1 can be downsized.

  Furthermore, by using the ceramic substrate 11 made of alumina, the member cost can be reduced. Moreover, since the availability of alumina is easy, it is possible to improve the mass productivity and reduce the apparatus cost. Moreover, since alumina is excellent in thermal conductivity, it can be configured with a margin for increasing the amount of light and increasing the output. Furthermore, alumina is optically advantageous because of its low light absorption rate.

  In the above embodiment, the step portion 11c is formed only on the outer edge portion of the lower surface of the ceramic substrate 11 where the electrode pattern 16 is formed. For example, as shown in FIG. Of course, the stepped portion 111c may be formed on the outer edge portion to be formed. The ceramic substrate 11 of the light emitting device 101 of FIG. 7 has a thin portion 111b corresponding to the heat dissipation pattern 17 in addition to the thin portion 11b described above. Thereby, the solder material 36 connected to the heat radiation pattern 17 is joined to the vertical surface in addition to the horizontal surface of the heat radiation pattern 17, and the joint strength with the mounting substrate is further improved.

  In the above embodiment, the ceramic substrate 11 is formed in a square shape when viewed from above. However, the ceramic substrate 11 is formed in a rectangular shape having different short sides and long sides, for example. It may be formed in a parallelogram shape. Moreover, although the upper surface of the ceramic substrate 11 is shown to be flat, a recess in which the sealing portion 13 is accommodated may be formed. Further, although the upper surface pattern 14 is formed so as to be separated from the outer edge of the ceramic substrate 11, the upper surface pattern 14 is a ceramic substrate although the bonding strength between the sealing portion 13 and the ceramic substrate 11 is inferior to that of the above embodiment. It may extend to 11 outer edges.

In the above embodiment, the plate-like phosphor-dispersed glass 43 is bonded to the connection substrate 41 by hot pressing. The glass may be fused to the connection substrate 41 by melting and solidifying above.
In the above embodiment, the LED element 12 is mounted and sealed with the phosphor-dispersed glass 43, and then the connection substrate 41 is diced. However, after the connection substrate 41 is diced, the LED element 12 is mounted and You may make it perform sealing. That is, even in the form of a substrate device provided with the ceramic substrate 11, the upper surface pattern 14, the electrode pattern 16, and the via pattern 15, a short circuit of the electrode pattern 16 can be prevented. And even if it is a manufacturing method of the light-emitting device which abbreviate | omitted the element mounting process and the glass sealing process and included the pattern formation process and the dicing process, the short circuit of the electrode pattern 16 can be prevented.

  Moreover, in the said embodiment, although what emitted white light from the light-emitting device 1 was shown, blue light is emitted from the light-emitting device 1 as a structure by which the fluorescent substance 13a is not included in the sealing part 13, for example. It may be. Moreover, although the LED element 12 is shown as a flip-chip type, it may be a face-up type. Furthermore, the number of LED elements 12 mounted on one ceramic substrate 11 and the arrangement state of the LED elements 12 are arbitrary. As described above, the detailed configuration, emission color, and the like of the light emitting device 1 can be changed as appropriate. Furthermore, although the reliability or the like is inferior to that of glass, the sealing portion 13 may be made of resin.

Further, in the above embodiment, although the one ceramic substrate 11 is made of alumina (Al 2 _{O 3),} it may be formed from a ceramic other than alumina. For example, BeO (thermal expansion coefficient α: 7.6 × 10 ⁻⁶ / ° C., thermal conductivity: 250 W / (m · k)) is used as a ceramic substrate made of a high thermal conductivity material that is superior in thermal conductivity to alumina. May be. Furthermore, for example, a W—Cu substrate may be used as another highly heat conductive substrate. As a W-Cu substrate, a W90-Cu10 substrate (thermal expansion coefficient α: 6.5 × 10 ⁻⁶ / ° C., thermal conductivity: 180 W / (m · k)), a W85-Cu15 substrate (thermal expansion coefficient α: By using 7.2 × 10 ⁻⁶ / ° C. and thermal conductivity: 190 W / (m · k)), it is possible to impart high thermal conductivity while ensuring good bonding strength with the glass sealing portion. Therefore, it is possible to cope with an increase in the amount of light and output of the LED with a margin. Furthermore, it is possible to use a material other than ceramic as the substrate, and it is needless to say that specific detailed structures can be appropriately changed.

It is a top view of the light-emitting device which shows one Embodiment of this invention. It is AA sectional drawing of FIG. It is a bottom view of a light-emitting device. It is process explanatory drawing of the manufacturing method of a light-emitting device. It is a bottom view of the connection board | substrate which shows the state before dividing | segmenting the ceramic substrate of each light-emitting device with a dicer. It is model explanatory drawing which shows the state of a hot press process. It is a bottom view of the light-emitting device which shows a modification.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light-emitting device 11 Ceramic substrate 11a General part 11b Thin part 11c Step part 12 LED element 13 Sealing part 13a Phosphor 14 Upper surface pattern 15 Via pattern 16 Electrode pattern 17 Heat radiation pattern 18 Bump 31 Mounting substrate 32 Substrate body 33 Insulating layer 34 Circuit pattern 35 Resist layer 36 Solder material 37 Solder material 41 Connecting substrate 43 Phosphor dispersed glass 51 Intermediate 91 Lower mold 92 Upper mold 101 Light emitting device 111b Thin portion

Claims (6)

An LED element;
A substrate formed in a quadrangular shape when viewed from above, and having an upper surface on which the LED element is mounted and two stepped portions formed respectively from a lower part to a lower surface of two opposing side surfaces;
An upper surface pattern formed on the upper surface of the substrate and electrically connected to the LED element;
A sealing portion for sealing the LED element and the upper surface pattern;
A pair of electrode patterns that are spaced apart from each corner of the lower surface of the substrate and are respectively formed on the two stepped portions of the substrate;
A light emitting device comprising: a via pattern extending in a thickness direction of the substrate inside the substrate and connecting the upper surface pattern and the electrode pattern. The upper surface of the substrate is formed flat;
The sealing portion is bonded to the entire top surface of the substrate,
The light emitting device according to claim 1, wherein the upper surface pattern is formed apart from an outer edge of the upper surface of the substrate. The substrate is made of ceramic,
The light emitting device according to claim 2, wherein the sealing portion is made of glass. A substrate having a quadrangular shape when viewed from above, and a flat upper surface, and two stepped portions formed respectively from a lower portion to a lower surface of two opposing side surfaces;
An upper surface pattern formed on the upper surface of the substrate apart from the outer edge of the upper surface;
A pair of electrode patterns that are spaced apart from each corner of the lower surface of the substrate and are respectively formed on the two stepped portions of the substrate;
A substrate device comprising: a via pattern extending in a thickness direction of the substrate inside the substrate and connecting the upper surface pattern and the electrode pattern. In manufacturing the light emitting device according to any one of claims 1 to 3,
A pattern forming step of forming the upper surface pattern, the electrode pattern, and the via pattern on a connection substrate in which a plurality of the substrates are connected;
A dicing step of dividing the connection substrate on which the upper surface pattern, the electrode pattern, and the via pattern are formed by a dicer. In manufacturing the light emitting device according to claim 3,
A pattern forming step of forming the upper surface pattern, the electrode pattern, and the via pattern on a connection substrate in which a plurality of the substrates are connected;
An element mounting step of mounting the LED element on the connection substrate on which the upper surface pattern, the electrode pattern, and the via pattern are formed;
A glass sealing step of fusing glass formed in a plate shape to the connection substrate on which the LED element is mounted by hot pressing, and sealing the LED element on the connection substrate;
A dicing step of dividing the connecting substrate on which the glass is fused with a dicer.

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