JP2009130201A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has high heat dissipation and low inductance and also can maintain reliability of a thin wiring layer on a substrate. <P>SOLUTION: A semiconductor device includes a semiconductor switching element 12U on an upper arm side arranged on an upper arm and a semiconductor switching element 12L at a lower arm side arranged on a lower arm. A source terminal of the semiconductor switching element 12U on the upper arm side and a drain terminal of the semiconductor switching element 12L on the lower arm side are connected through a first wiring 14 consisting of the wiring layer. Also, the semiconductor device includes a second wiring 10 connected in parallel with the first wiring, while a current component of low frequency is flown more easily in the second wiring 10 than in the first wiring at the switching operation using the semiconductor switching element. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device, and more particularly to a semiconductor device suitable for use in a device that switches a large current.

  Conventionally, in a semiconductor device, (1) low switching (SW) loss, (2) low conduction loss, (3) reduction in thermal resistance, and (4) maintenance of reliability have been important issues. Hereinafter, it demonstrates in detail in order.

  (1) A surge (inductive) voltage ΔV, which is a problem in SW loss, is obtained by ΔV = −L (di / dt) where the current change rate is (di / dt) and the main circuit inductance of the semiconductor device is L. . Therefore, in order to reduce the surge voltage ΔV, a countermeasure can be considered in which L is reduced or (di / dt) is reduced, that is, the switching speed is reduced. However, high speed switching is required in the semiconductor device, and it is difficult to reduce (di / dt). Therefore, it is desirable to suppress the switching surge voltage by reducing the inductance L of the main circuit.

  In order to reduce the main circuit inductance L, it is necessary to reduce parasitic inductance such as the internal wiring of the semiconductor chip, the external wiring between the power supply smoothing capacitor and the element, and the internal wiring of the power supply smoothing capacitor.

  (2) The conduction loss is determined by the wiring resistance of the current path and the internal resistance of the element. A large loss not only reduces efficiency but also increases the amount of heat generated, leading to an increase in the size of the device, such as installing a cooler. Furthermore, repeated heat generation and cooling leads to a decrease in reliability. In order to reduce energization loss, it is necessary to select a low resistance element and reduce the wiring resistance by using a wide and thick lead or a substrate wiring layer.

  (3) A problem in reducing thermal resistance is an insulating material or an adhesive that exists on the heat dissipation path. In general, since the thermal conductivity of insulating materials and adhesives is small, the heat generated from the semiconductor chip on the substrate, the current detection resistor, etc. can be efficiently transferred to other members, or it can be cooled by a fan, etc. It is important to do. In order to reduce thermal resistance, it is necessary to use an insulating material having a high thermal conductivity and to increase the size of a semiconductor device. Also, forced cooling such as water cooling or air cooling is one of the methods.

  (4) Generally speaking, reliability of a semiconductor device is concerned about destruction of a solder joint or peeling of a sealing resin such as epoxy. As measures for maintaining the reliability of the joint, there are selection of a member having a small difference in thermal expansion coefficient and resin sealing with epoxy or the like. In addition, maintaining reliability of the wiring layer of the substrate part is also an important issue for reliability. When a large current of several hundreds (A) flows through the wiring layer of the substrate portion, the wiring layer generates heat, and the semiconductor device may be destroyed if the semiconductor device is used for a long time. As measures to maintain the reliability of the wiring layer, suppress the heat generation by widening the wiring layer, use an insulator with high thermal conductivity as the insulating layer of the board part, increase the voltage, etc. It is necessary to avoid a large current flow.

  As described above, in semiconductor devices, reduction of inductance and loss, thermal resistance reduction, and maintenance of reliability are important issues. As a semiconductor device having a low inductance structure and a low thermal resistance structure, Something like that is known.

  First, a substrate on which a semiconductor chip is mounted is mounted on the upper part of the cooler, and a bus bar part is stacked below the cooling part via an insulating layer. Further, the wiring patterns of the bus bar portion and the substrate portion are connected by a vertical electrode (see, for example, Patent Document 1). As a result, the inductance of the bus bar portion can be reduced, and the semiconductor device can be reduced in size.

  Secondly, a metal heat dissipation block is provided under a semiconductor chip mounted on a lead frame, resin-sealed, and further mounted on a metal substrate (see, for example, Patent Document 2). Thereby, a downward heat radiation path can be secured and the thermal resistance can be reduced.

  Thirdly, when the semiconductor chip mounted on the substrate and the lead terminal to the outside are sealed with resin, pre-coating with a resin having good adhesion to metal is performed in advance (see, for example, Patent Document 3). Thereby, peeling of resin is suppressed and reliability is improved.

JP 2005-354864 A JP 2006-190798 A JP 2006-179538 A

  However, although the thing of patent document 1 implement | achieves low inductance by laminating a bus bar part, there exists a problem which becomes complicated by sandwiching an insulating layer. In addition, there is a problem that reliability decreases when a large current is supplied to the substrate wiring.

  In the thing of patent document 2, there exists a problem that reduction of the inductance of a lead frame part becomes difficult.

  Further, the device described in Patent Document 3 has problems that it is difficult to reduce the inductance of the wiring portion and the lead frame portion, and it is difficult to maintain the reliability of the wiring of the substrate portion.

  An object of the present invention is to provide a semiconductor device that has high heat dissipation and low inductance and can maintain the reliability of a wiring layer on a substrate.

(1) In order to achieve the above object, the present invention includes an upper arm side semiconductor switching element disposed in an upper arm, a lower arm side semiconductor switching element disposed in a lower arm, and the upper arm side semiconductor switching element. A first wiring composed of a wiring layer connected to a source terminal of the semiconductor switching element and a drain terminal of the semiconductor switching element on the lower arm side; the first wiring is connected to an output line; and the semiconductor on the upper arm side A semiconductor device in which a drain terminal of a switching element is connected to a power supply line, and a source terminal of the semiconductor switching element on the lower arm side is connected to a ground line, and is connected in parallel to the first wiring and the upper arm When switching the side or lower arm side semiconductor switching element, a current component having a lower frequency flows than the first wiring. There is obtained as a second wiring.
With such a configuration, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

(2) In the above (1), preferably, the semiconductor switching elements on the upper arm side and the lower arm side are formed of a semiconductor chip, connected to the drain terminal of the semiconductor switching element on the upper arm side, and It is larger than the chip size of the arm-side semiconductor switching element and is connected to the first heat spreader having thermal diffusibility and the drain terminal of the lower-arm semiconductor switching element, and the lower-arm-side semiconductor switching element A second heat spreader that is larger than the chip size and has thermal diffusibility is provided.
(3) In the above (2), preferably, the first wiring is a wiring layer formed on a substrate, the second heat spreader is connected and fixed to the first wiring, and the first heat spreader is The first wiring and the another wiring layer are connected to and fixed to another wiring layer formed on the substrate, and the first wiring and the other wiring layer are connected by the second wiring. Is configured in a loop on the substrate.

  (4) In the above (3), preferably, the semiconductor switching elements on the upper arm side and the lower arm side are individually or collectively sealed with resin.

  (5) In the above (3), preferably, the upper arm side and lower arm side semiconductor switching elements and the substrate are integrally resin-sealed.

  (6) In the above (1), preferably, the second wiring is connected to a first member connected to a source terminal of the semiconductor switching element on the upper arm side and a drain terminal of the semiconductor switching element on the lower arm side. It consists of a connected second member and a third member connecting the first member and the second member.

  (7) In the above (1), preferably, a third wiring connected to the drain terminal of the semiconductor switching element on the upper arm side and a fourth wiring connected to the source terminal of the semiconductor switching element on the lower arm side The third wiring and the fourth wiring are arranged close to each other within a range that maintains the insulation distance.

  (8) In the above (2), preferably, a part of the second wiring has a portion disposed in parallel with a side surface of the first heat spreader, and the parallel wiring portion includes a portion of the second wiring. The portion and the side surface of the first heat spreader are arranged close to each other within a range that maintains the insulation distance.

  (9) In the above (3), preferably, a fourth wiring having a further wiring layer formed on the substrate and connected to a source terminal of the semiconductor switching element on the lower arm side, The lead is connected to another wiring layer, and further has a lead connected to the further wiring layer, and the third wiring connected to the drain terminal of the semiconductor switching element on the upper arm side is insulated from the lead. They are arranged close to each other within a range that maintains the distance.

(10) In order to achieve the above object, the present invention provides an upper arm side semiconductor switching element disposed on an upper arm, a lower arm side semiconductor switching element disposed on a lower arm, and the upper arm. A first wiring composed of a wiring layer connected to a source terminal of the semiconductor switching element on the side and a drain terminal of the semiconductor switching element on the lower arm side, the first wiring being connected to an output line, A semiconductor device in which a drain terminal of the semiconductor switching element is connected to a power supply line, and a source terminal of the semiconductor switching element on the lower arm side is connected to a ground line, wherein the second wiring is connected in parallel to the first wiring The second wiring includes an electric current that gradually flows during switching of the upper arm side or lower arm side semiconductor switching element. Together but has the property of increasing, the first wiring at the time of switching of the upper arm or the lower arm side semiconductor switching element, once the flowing current increases, and has a feature progressively current decreases.
With such a configuration, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

(11) Furthermore, in order to achieve the above object, the present invention provides an upper arm side semiconductor switching element disposed in an upper arm, a lower arm side semiconductor switching element disposed in a lower arm, and the upper arm. A first wiring composed of a wiring layer connected to a source terminal of the semiconductor switching element on the side and a drain terminal of the semiconductor switching element on the lower arm side, the first wiring being connected to an output line, The semiconductor switching element has a drain terminal connected to a power supply line, and a source terminal of the lower arm side semiconductor switching element connected to a ground line, wherein the first wiring is formed on a substrate A wiring layer formed by etching a metal foil, which is connected in parallel with the first wiring and made of a metal thicker than the first wiring It is obtained as a second wiring is read.
With such a configuration, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

  According to the present invention, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

The configuration and operation of the semiconductor device according to the first embodiment of the present invention will be described below with reference to FIGS.
First, the configuration of the motor driving apparatus using the semiconductor device according to the present embodiment will be described with reference to FIG.
FIG. 1 is a circuit diagram showing a configuration of a motor drive device using the semiconductor device according to the first embodiment of the present invention.

  The motor drive device shown in FIG. 1 includes a power source BAT such as a battery, an inverter INV, an AC synchronous motor M, and a motor control circuit MCU. The power source BAT is a DC power source of about 100V to 300V. For example, a high current of 100 A or more is supplied to the AC synchronous motor M. A 42V DC power supply or a 600V DC power supply can also be used.

  The inverter INV converts the DC power of the power source BAT into three-phase AC power, supplies the AC power to the AC synchronous motor M, and rotationally drives the AC synchronous motor M. The AC synchronous motor M includes a U-phase coil Cu, a V-phase coil Cv, and a W-phase coil Cw as armature coils. Each coil Cu, Cv, Cw is Y-connected. The AC synchronous motor M also includes a field coil, which is not shown.

  The inverter INV includes six semiconductor switching elements 12UU, 12UL, 12VU, 12VL, 12WU, and 12WL. The U-phase upper arm semiconductor switching element 12UU and the U-phase lower arm semiconductor switching element 12UL are connected in series. That is, the source terminal of the U-phase upper arm semiconductor switching element 12UU and the drain terminal of the U-phase lower arm semiconductor switching element 12UL are connected by the first wiring 14U and the second wiring 10U. The first wiring 14U and the second wiring 10U are connected in parallel. The first wiring 14U and the second wiring 10U are different types of wiring. Although details will be described later, the first wiring 14U is a thin wiring formed in a wiring board shape, for example, formed by etching a copper foil. The second wiring 10U is a thick wiring using a copper bar. The cross-sectional area of the second wiring 10U is larger than the cross-sectional area of the first wiring 14U. The first wiring 14U is conventionally used, and this embodiment is characterized in that the second wiring 10U is provided in parallel with the first wiring 14U.

  The drain terminal of the semiconductor switching element 12UU of the U-phase upper arm is connected to the power supply line PL by a third wiring 1U that is a power supply side wiring. The source terminal of the semiconductor switching element 12UL of the U-phase lower arm is connected to the earth line EL by a fourth wiring 2U that is a ground-side wiring. The power supply line PL is connected to the positive electrode of the power supply BAT, and the earth line EL is connected to the negative electrode of the power supply BAT.

  The V-phase upper arm semiconductor switching element 12VU and the V-phase lower arm semiconductor switching element 12VL are connected in series. That is, the source terminal of the V-phase upper arm semiconductor switching element 12VU and the drain terminal of the V-phase lower arm semiconductor switching element 12VL are connected by the first wiring 14V and the second wiring 10V. The first wiring 14V and the second wiring 10V are connected in parallel. The drain terminal of the semiconductor switching element 12VU of the V-phase upper arm is connected to the power supply line PL by the third wiring 1V. The source terminal of the semiconductor switching element 12VL of the V-phase lower arm is connected to the earth line EL by the fourth wiring 2V.

  The W-phase upper arm semiconductor switching element 12WU and the W-phase lower arm semiconductor switching element 12WL are connected in series. That is, the source terminal of the semiconductor switching element 12WU of the W-phase upper arm and the drain terminal of the semiconductor switching element 12WL of the W-phase lower arm are connected by the first wiring 14W and the second wiring 10W. The first wiring 14W and the second wiring 10W are connected in parallel. The drain terminal of the semiconductor switching element 12WU of the W-phase upper arm is connected to the power supply line PL by the third wiring 1W. The source terminal of the semiconductor switching element 12WL of the W-phase lower arm is connected to the earth line EL by the fourth wiring 2W.

  The U-phase second wiring 10U is connected to the U-phase coil Cu of the AC synchronous motor M by a U-phase output line 22U. The V-phase second wiring 10V is connected to the V-phase coil Cv of the AC synchronous motor M by a V-phase output line 22V. The W-phase second wiring 10 </ b> W is connected to the W-phase coil Cw of the AC synchronous motor M by a W-phase output line 22 </ b> W.

  A gate control signal is input from the motor control circuit MCU to each gate terminal of the semiconductor switching elements 12UU, 12UL, 12VU, 12VL, 12WU, and 12WL. For example, when a high-level gate control signal is input to the gate terminal of the semiconductor switching element 12UU, the semiconductor switching element 12UU becomes conductive, and a current flows from the drain terminal to the source terminal of the semiconductor switching element 12UU.

  For example, when the motor switching circuit MCU conducts the semiconductor switching element 12UU and the semiconductor switching element 12VL and the other semiconductor switching elements 12UL, 12VU, 12WU, and 12WL are disabled, the high current from the power supply BAT is The switching element 12UU is supplied to the U-phase coil Cu of the AC synchronous motor M via the second wiring 10U and the U-phase output line 22U. The high current that has passed through the neutral point of the Y connection of the AC synchronous motor M is further supplied to the V-phase coil Cv and flows to the semiconductor switching element 12VL via the V-phase output line 22V and the second wiring 10V. Return to the power supply BAT via the earth line EL.

  The motor control circuit MCU selects and controls the semiconductor switching elements 12UU, 12UL, 12VU, 12VL, 12WU, and 12WL to be conducted, and thereby controls predetermined coils among the three-phase coils Cu, Cv, and Cw of the AC synchronous motor M. Is turned on to rotate the rotor of the AC synchronous motor M and output a rotational driving force. At this time, the motor control circuit MCU uses the PWM signal as a gate control signal supplied to each gate terminal of the semiconductor switching elements 12UU, 12UL, 12VU, 12VL, 12WU, and 12WL, so that each of the semiconductor switching elements 12UU, 12UL, and 12VU. , 12VL, 12WU, and 12WL are controlled to vary the current flowing through the three-phase coils Cu, Cv, and Cw of the AC synchronous motor M, so that the driving force of the AC synchronous motor M can be varied.

  In FIG. 1, MOSFETs are illustrated as the semiconductor switching elements 12UU, 12UL, 12VU, 12VL, 12WU, and 12WL, but IGBTs can also be used. In that case, since the diode is further mounted on the heat spreader, the wire is connected to the lead portion via the diode.

  When a motor generator is used as the AC synchronous motor M, when the AC synchronous motor M operates as a generator, the generated power of the generator is converted into direct current by the inverter INV and stored in the power source BAT.

Next, the equivalent circuit of the semiconductor device according to the present embodiment will be explained with reference to FIG.
FIG. 2 is an equivalent circuit diagram of the semiconductor device according to the first embodiment of the present invention.

  The semiconductor device according to the present embodiment constitutes the U-phase upper and lower arms, the V-phase upper and lower arms, and the W-phase upper and lower arms shown in FIG. Since the U-phase upper and lower arms, the V-phase upper and lower arms, and the W-phase upper and lower arms all have the same configuration, only one phase will be exemplified here.

  The source terminal of the upper arm semiconductor switching element 12 </ b> U and the drain terminal of the lower arm semiconductor switching element 12 </ b> L are connected by the first wiring 14 and the second wiring 10. The first wiring 14 and the second wiring 10 are connected in parallel. The first wiring 14 and the second wiring 10 are different types of wiring. The drain terminal of the upper arm semiconductor switching element 12U is connected to the power supply line PL by the third wiring 1. The source terminal of the lower arm semiconductor switching element 12 </ b> L is connected to the earth line EL by the fourth wiring 2.

  The first wiring 14, the second wiring 10, the third wiring 1, and the fourth wiring 2 are illustrated as equivalent circuits in which a resistor and an inductance are connected in series, respectively. The first wiring 14 is a thin wiring formed in the shape of a wiring board, for example, by etching a copper foil, as described above and described later with reference to FIG. The second wiring 10 is a thick wiring using a copper bar. Similarly to the second wiring 10, the third wiring 1 and the fourth wiring 2 are also thick wirings using copper bars.

  For example, when the upper arm semiconductor switching element 12U is conductive and the lower arm semiconductor switching element 12L is nonconductive, the current flowing from the upper arm semiconductor switching element 12U to the output line 22 passes through the first wiring 14. It is divided into one that flows to the output line 22 and one that flows to the output line 22 via the second wiring 10.

  Details of the currents flowing through the wirings 14 and 10 will be described later with reference to FIG.

Next, the specific configuration of the semiconductor device according to the present embodiment will be explained with reference to FIGS.
FIG. 3 is a perspective view showing a specific configuration of the semiconductor device according to the first embodiment of the present invention. FIG. 4 is a plan view showing a specific configuration of the semiconductor device according to the first embodiment of the present invention. 5 is a cross-sectional view taken along line AA ′ of FIG.

  As shown in FIG. 3, the drain electrode of the semiconductor switching element 12 </ b> U on the upper arm side is connected to the heat spreader 21. A drain electrode of the semiconductor switching element 12 </ b> L on the lower arm side is connected to the heat spreader 23. The heat spreader 24 is made of copper having good thermal conductivity and low electrical resistance.

  The semiconductor switching elements 12U and 12L have a chip structure, and the size thereof is, for example, 9 mm square. Since the semiconductor switching elements 12U and 12L switch a large current, they generate a large amount of heat. The substrate 17 is thermally connected to a heat radiating part such as a fin (not shown). The heat generated by the semiconductor switching elements 12U and 12L is radiated from the heat radiating portion via the substrate 17. Therefore, when the semiconductor switching elements 12U and 12L are directly fixed to the substrate 17, the size of the semiconductor switching elements 12U and 12L is small, so that heat cannot be sufficiently transferred to the substrate 17.

  Therefore, the semiconductor switching elements 12U and 12L are fixed to the heat spreaders 21 and 23 with solder or the like, respectively. The size of the heat spreaders 21 and 23 is, for example, 30 mm square, and is larger than the size of the semiconductor switching elements 12U and 12L. Therefore, the heat generated by the semiconductor switching elements 12U and 12L is spread by the heat spreaders 21 and 23 and transferred to the substrate 17. As a result, the heat dissipation from the substrate 17 can be improved.

  As shown in FIG. 5, the substrate 17 includes a metal base 11, an insulating layer 15 made of resin such as polyimide attached to the upper surface of the metal base 11, and wiring layers 13 and 14 attached on the insulating layer 15. Consists of. The thickness of the insulating layer is as thin as about 0.1 μm, for example. In the wiring layers 13 and 14, after a copper foil is attached to the entire surface of the insulating layer 15, a wiring layer pattern is formed by etching. The thickness of the copper foil is, for example, 100 μm. An aluminum foil can be used instead of the copper foil.

  As shown in FIGS. 3 and 5, the lower surface of the heat spreader 21 is connected to the wiring layer 13 on the substrate 17 by solder or the like. The lower surface of the heat spreader 23 is connected to the wiring layer 14 on the substrate 17 by solder or the like.

  Further, the lead 1 as the third wiring layer is electrically connected to the heat spreader 21 by soldering, ultrasonic bonding, or the like. The lead 2 as the fourth wiring layer is electrically connected to the heat spreader 24 by soldering, ultrasonic bonding, or the like. The source electrode on the upper surface of the semiconductor switching element 12L is connected to the lead 2 by a plurality of wires 3L. The wires 3U and 3L are made of metal such as aluminum or gold.

  The lead 10 as the second wiring layer is integrally formed in an H shape as shown in the figure. The source electrode on the upper surface of the semiconductor switching element 12U is connected to the lead 10 by a plurality of wires 3U. The lead 10 is made of copper, but may be made of aluminum. The thickness of the lead 10 is, for example, 1 to 2 mm, and is thicker than the thickness of the copper foil used as the first wiring layer 14. That is, the resistance of the lead 10 is smaller than the resistance of the first wiring layer 14. As the lead 10, aluminum can be used instead of copper.

  The drain electrode on the lower surface of the semiconductor switching element 12L is solder-connected to the heat spreader 23. The heat spreader 23 is soldered to the first wiring layer 14. The lead 10 as the second wiring layer is soldered to the heat spreader 23. Therefore, the lead 10 as the second wiring layer is also connected to the drain electrode of the semiconductor switching element 12L via the heat spreader 23.

  As described above, the upper arm side and the lower arm side are connected in a configuration in which the wiring layer 14 and the lead 10 on the substrate unit 17 are arranged in parallel.

  The drain electrode on the lower surface of the semiconductor switching element 12U is soldered to the heat spreader 21. The drain electrode of the semiconductor switching element 12U is connected to the lead 1 as the third wiring layer via the heat spreader 21.

  The output line 22 shown in FIG. 2 is connected to the lead 10 that is the second wiring layer.

  The heat spreader 21 is soldered to the fifth wiring layer 13. The fifth wiring layer 13 does not have a function as a wiring, and is simply for fixing the heat spreader 21 to the substrate 17.

  For the connection of the heat spreader and leads, other electrical connection methods such as ultrasonic connection and conductive adhesive can be used in addition to the solder connection.

  As shown in FIG. 4, the lead 1 and the lead 2 are arranged in parallel. The lead 1 is electrically connected to the lead 2 via the lead 10 that is the second wiring layer. The lead 1 is electrically connected to the lead 2 via the wiring layer 14 which is the first wiring layer. That is, the current path from the lead 1 to the lead 2 is U-shaped. That is, the current path from the lead 1 to the lead 2 is configured in a loop shape so as to draw a circle.

  Furthermore, as shown in FIG. 5, the semiconductor device of this embodiment includes two semiconductor switching elements 12U and 12L, which are integrally sealed with a resin 40.

  The semiconductor device of this embodiment can obtain the following effects by adopting the above configuration.

  1) The heat spreaders 21 and 23 are fixed immediately below the semiconductor switching elements 12U and 12L, and the heat from the semiconductor switching elements 12U and 12L can be diffused to reduce the thermal resistance.

  2) By using the wiring layers 14 and 13 of the substrate 17 and further forming a current path from the lead 1 to the lead 2 in a loop shape, the inductance can be reduced. That is, by forming the current path from the lead 1 to the lead 2 in a loop shape, the current flowing from the lead 1 and the current flowing from the lead 2 are reversed in the substrate 17, and electromagnetic action generated by the mutual currents. , The inductance can be reduced.

Here, the inductance reduction effect according to the present embodiment will be described with reference to FIG.
FIG. 6 is an explanatory diagram of the analysis result of the inductance in the semiconductor device according to the first embodiment of the present invention. In FIG. 6, the vertical axis represents voltage, which is an arbitrary unit. The horizontal axis indicates time t.

  In the conventional structure, since it is difficult to reduce the inductance, as shown by the solid line A, the jumping voltage at the time of switching increases.

  On the other hand, in the configuration of the present embodiment, as shown by the solid line B, a low inductance can be realized, so that the jumping voltage can be made smaller than the conventional one. As a result, a low withstand voltage element can be used, and the loss of the element can be reduced.

  3) Of the current flowing through the semiconductor device, the current of the low frequency component passes through the path having a small resistance, and therefore is the shortest path and the lead that is the second wiring layer that is thicker than the wiring layer 14 that is the first wiring layer. 10 flows. On the other hand, since the high-frequency component current passes through a path with a small inductance, it flows through the wiring layer 14 on the substrate along the path with a small inductance as described in 2). As a result, it is possible to prevent a large current from flowing through the wiring layer 14 and maintain reliability.

Here, the current distribution according to the present embodiment will be described with reference to FIG.
FIG. 7 is an explanatory diagram of current distribution in the current path in the semiconductor device according to the first embodiment of the present invention. In FIG. 7, the vertical axis represents current, and the total current is 1. The horizontal axis indicates time t.

  In FIG. 7, a solid line A indicates a current flowing through the lead 10 that is the second wiring layer. A solid line B indicates a current flowing through the wiring layer 14 which is the first wiring layer. A solid line C indicates the sum of the solid line A and the solid line B, that is, the total current.

  In FIG. 7, when the current increases stepwise as indicated by the solid line C, first, as indicated by the solid line B, the lead that is the second wiring layer is connected to the wiring layer 14 that is the first wiring layer having a small inductance. A current greater than 10 flows. However, after a certain amount of time has elapsed, the resistance component becomes dominant, so that the current value of the wiring layer 14 that is the first wiring layer having a high resistance decreases, and conversely, the lead that is the second wiring layer having a low resistance. Ten currents increase.

  Thus, in the structure of the present embodiment, the flow can be divided and the reliability can be improved.

  Further, when the inductance of the wiring layer 14 that is the first wiring is large, the value of the current that instantaneously flows in the wiring layer 14 indicated by the solid line B in FIG. 7 increases. However, in this embodiment, since the inductance of the wiring layer 14 is reduced, the current flowing through the leads connected to the wiring layer 14 is reduced, and heat generation can be suppressed. Therefore, the reliability of the solder portion of the connection portion between the lead 10 and the wiring layer 14 can be improved.

  4) By sealing the resin including the substrate, the reliability of the solder connection portion can be maintained.

  Next, the planar configuration of the inverter using the semiconductor device according to the present embodiment will be described with reference to FIG.

  FIG. 8 is a plan view of an inverter using the semiconductor device according to the first embodiment of the present invention. In addition, the same code | symbol as FIGS. 1-5 has shown the same part.

  A U-phase upper / lower arm semiconductor switching unit 34U, a V-phase upper / lower arm semiconductor switching unit 34V, and a W-phase upper / lower arm semiconductor switching unit 34W are soldered on the metal heat sink 32. The individual circuit configurations of the switching units 34U, 34V, 34W are the same as those shown in FIG. The circuit configuration of the inverter INV is the same as that shown in FIG.

  In this embodiment, it has a 6 in 1 structure in which six semiconductor switching elements are accommodated in the same package. On the back side of the heat radiating plate 32, heat radiating fins are provided and cooled by cooling air or cooling water.

  As described above, according to the present embodiment, by using the heat spreader immediately below the semiconductor switching element, heat from the semiconductor switching element can be diffused and the thermal resistance can be reduced.

  In addition, a low inductance can be achieved by making the current path of the wiring layer of the board into a loop shape.

  In addition, the wiring layer and the lead are arranged in parallel to prevent a large current from flowing through the wiring layer, and a large current is allowed to flow through the lead, thereby maintaining reliability.

  Moreover, the reliability of the solder connection portion can be maintained by resin sealing including the substrate.

  Therefore, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

Next, the configuration and operation of the semiconductor device according to the second embodiment of the present invention will be described with reference to FIG. The configuration of the motor driving apparatus using the semiconductor device according to the present embodiment is the same as that shown in FIG. The equivalent circuit of the semiconductor device according to the present embodiment is the same as that shown in FIG.
FIG. 9 is a perspective view showing a specific configuration of the semiconductor device according to the second embodiment of the present invention. In addition, the same code | symbol as FIGS. 1-5 has shown the same part.

  In the present embodiment, the configuration of the leads is different from that shown in FIG. That is, in the present embodiment, the lead that is the second wiring is composed of three members, that is, the lead 10A, the lead 10B, and the lead 10C. The lead 10A, the lead 10B, and the lead 10C are all made of copper, and the thickness is larger than the thickness of the copper foil used as the first wiring layer 14.

  One end of the lead 10 </ b> A is soldered to the heat spreader 23. The output line 22 shown in FIG. 2 is connected to the other end of the lead 10A.

  One end of the lead 10B is connected to the source electrode on the upper surface of the semiconductor switching element 12U by a plurality of wires 3U. The other end of the lead 10B is soldered to the first wiring layer 14.

  The lead 10C is soldered at both ends near the center of the lead 10A and near the center of the lead 10B.

  Therefore, the 1st wiring 14 and the 2nd wiring which consists of lead 10A, lead 10B, and lead 10C are connected in parallel.

  Also according to the present embodiment, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained. In the present embodiment, the lead 10A is connected to the output line 22. However, the same effect can be obtained even if the lead 10B or the lead 10C is connected to the output line 22. Furthermore, a new lead may be connected to the substrate wiring 14 as 10D, and the lead 10D may be connected to the output line 22.

Next, the configuration and operation of the semiconductor device according to the third embodiment of the present invention will be described with reference to FIG. The configuration of the motor driving apparatus using the semiconductor device according to the present embodiment is the same as that shown in FIG. The equivalent circuit of the semiconductor device according to the present embodiment is the same as that shown in FIG.
FIG. 10 is a perspective view showing a specific configuration of the semiconductor device according to the third embodiment of the present invention. In addition, the same code | symbol as FIGS. 1-5 has shown the same part.

  In the present embodiment, the configuration of the leads is different from that shown in FIG. That is, in the present embodiment, the lead that is the second wiring is composed of three members, that is, the lead 10A ′, the lead 10B, and the lead 10C ′. The leads 10 </ b> A ′, leads 10 </ b> B, and leads 10 </ b> C ′ are all made of copper and have a thickness greater than the thickness of the copper foil used as the first wiring layer 14.

  One end of the lead 10 </ b> A ′ is soldered to the heat spreader 23.

  One end of the lead 10B is connected to the source electrode on the upper surface of the semiconductor switching element 12U by a plurality of wires 3U.

The lead 10C ′ is connected to the first wiring layer 14 by solder. Furthermore, the lead 10A ′ and the lead 10B ′ are electrically connected by solder, screws, or the like.
Therefore, the first wiring 14 and the second wiring including the lead 10A ′, the lead 10B, and the lead 10C ′ are connected in parallel.
Also according to the present embodiment, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained. In this embodiment, the same effect can be obtained regardless of which lead of 10A to 10D is connected to the output line 22 as shown in the second embodiment.

Next, the configuration and operation of the semiconductor device according to the fourth embodiment of the present invention will be described with reference to FIGS. The configuration of the motor driving apparatus using the semiconductor device according to the present embodiment is the same as that shown in FIG. The equivalent circuit of the semiconductor device according to the present embodiment is the same as that shown in FIG.
FIG. 11 is a plan view showing a specific configuration of the semiconductor device according to the fourth embodiment of the present invention. 12 is a cross-sectional view taken along the line AA ′ of FIG. 1 to 5 and 9 indicate the same parts.

  This embodiment has a configuration similar to that of the embodiment shown in FIG. 9, but is different in terms of a resin sealing structure. That is, in the embodiment shown in FIG. 9, the resin sealing does not integrally seal the entire substrate 14, but the switching portions including the semiconductor switching elements 12 </ b> U and 12 </ b> L are sealed with the resins 41 and 42, respectively. is doing.

  The switching unit including the semiconductor switching elements 12U and 12L may be integrally sealed with resin.

  Also according to the present embodiment, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

Next, the configuration and operation of the semiconductor device according to the fifth embodiment of the present invention will be described with reference to FIGS. The configuration of the motor driving apparatus using the semiconductor device according to the present embodiment is the same as that shown in FIG. The equivalent circuit of the semiconductor device according to the present embodiment is the same as that shown in FIG.
FIG. 13 is a perspective view showing a specific configuration of the semiconductor device according to the fifth embodiment of the present invention. FIG. 14 is a plan view showing a specific configuration of the semiconductor device according to the fifth embodiment of the present invention. 15 is a cross-sectional view taken along line AA ′ of FIG. In addition, the same code | symbol as FIGS. 1-5 has shown the same part.

  In the embodiment of FIGS. 3 to 5, the surface opposite to the surface on which the semiconductor chips of the heat spreaders 21 and 24 are mounted is connected to the wiring layers 13 and 14. As described above, the individual switching portions are sealed with the resins 41 and 42, respectively, and as shown in FIG. 15, the switching portions are sealed with the resin 41 up to the lower surface of the heat spreader.

  The switching unit including the semiconductor switching elements 12U and 12L may be integrally sealed with resin. Furthermore, the substrate may be integrally sealed including the substrate.

  The leads 10A ″ and 10B ″ are connected to the first wiring layer 14 ′ of the substrate 17.

  The surface opposite to the surface on which the semiconductor chips of the heat spreaders 21 and 24 are mounted may be fixed on the substrate 17 via an insulating layer. Thereby, the grease used for reducing the contact thermal resistance between the lower surface of the switching unit and the substrate can be effectively applied.

  Also according to the present embodiment, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

  Also, soldering when mounting the switching unit on the substrate is not required, and a lead solder-free structure can be obtained. In this embodiment, the same effect can be obtained regardless of which lead of 10A to 10D is connected to the output line 22 as shown in the second embodiment.

Next, the configuration and operation of the semiconductor device according to the sixth embodiment of the present invention will be described with reference to FIG. The configuration of the motor driving apparatus using the semiconductor device according to the present embodiment is the same as that shown in FIG. The equivalent circuit of the semiconductor device according to the present embodiment is the same as that shown in FIG.
FIG. 16 is a cross-sectional view showing a specific configuration of the semiconductor device according to the sixth embodiment of the present invention. 1 to 5 and 9 indicate the same parts.

  This embodiment is different from FIG. 9 in the shapes of the leads 1 ′ and 2 ′, and the other configurations are the same as those in FIG. 9.

  As shown in FIG. 16, the leads 1 ′ and 2 ″ are arranged so that the distance L1 between them is close within the range that maintains the insulation distance, thereby closing the current path loop and reducing the inductance. It becomes possible.

  In addition, when using a laminated lead having a structure in which the power supply line and the ground line connected to the leads 1 ′ and 2 ′ are each made of a copper bus bar and laminated with an insulating layer in between, the power supply side and the ground side overlap. Since the area is increased, the inductance can be further reduced.

  Also according to the present embodiment, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

Next, the configuration and operation of the semiconductor device according to the seventh embodiment of the present invention will be described with reference to FIG. The configuration of the motor driving apparatus using the semiconductor device according to the present embodiment is the same as that shown in FIG. The equivalent circuit of the semiconductor device according to the present embodiment is the same as that shown in FIG.
FIG. 17 is a cross-sectional view showing a specific configuration of the semiconductor device according to the seventh embodiment of the present invention. 1 to 5 and 9 indicate the same parts.

  This embodiment is different from FIGS. 5 and 9 in the shape of the lead 10BL as the second wiring, and the other configurations are the same as those in FIG.

  By arranging the distance L2 between the surfaces 61 of the heat spreader 21 facing the vertical portion 60 of the lead 10BL so as to be close as long as the insulation distance is maintained, the area of the overlapping portion of both leads to a large area. Can be reduced.

  Also according to the present embodiment, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained.

Next, the configuration and operation of the semiconductor device according to the eighth embodiment of the present invention will be described with reference to FIGS. The configuration of the motor driving apparatus using the semiconductor device according to the present embodiment is the same as that shown in FIG. The equivalent circuit of the semiconductor device according to the present embodiment is the same as that shown in FIG.
FIG. 18 is a perspective view showing a specific configuration of the semiconductor device according to the eighth embodiment of the present invention. FIG. 19 is a side view of the main part of FIG. In addition, the same code | symbol as FIGS. 1-5 has shown the same part.

  This embodiment is different from the embodiment shown in FIG. 3 in the configuration of the lead 2 ″. A new wiring layer 16 is provided on the substrate 17. The lower arm. The lead 2 ″ on the side is soldered to the wiring layer 16. Further, the lead 9 connected to the ground line side is solder-connected to the wiring layer 16.

  Three wiring layers 13, 14, and 16 are provided on the substrate 17. Since the current path can be configured to draw a loop with only the wiring layers 13, 14, and 16 of the substrate 17, inductance can be reduced.

  Further, as shown in FIG. 19, the lead 9 is taken out from a position close to the lead 1 on the upper arm side. The lead 9 is soldered to the wiring layer 16, a straight portion 9A, a straight portion 9B bent at a right angle with respect to the straight portion 9A, a bend with respect to the straight portion 9B, and the first straight portion 9A. It is comprised from the linear part 9C parallel to it. Here, an earth line is connected to the straight line portion 9C. A power supply line is connected to the lead 1. By disposing the distance L3 between the lead 1 and the straight portion 9C of the lead 9 so as to be close to each other within a range in which the insulation distance is maintained, the area of the overlapping portion of the leads 1 increases, thereby reducing the inductance of the lead portion. be able to.

  In addition, although the space | gap is provided between the lead | read | reed 1 and the linear part 9C, you may make it interpose resin in this space | gap part.

  Also according to the present embodiment, high heat dissipation and low inductance are achieved, and the reliability of the wiring layer on the substrate can be maintained. In this embodiment, the same effect can be obtained regardless of which lead of 10A to 10D is connected to the output line 22 as shown in the second embodiment.

  In each of the above embodiments, the drain electrode of the semiconductor chip is connected to the lead by a wire. However, the lead may be directly connected to the drain electrode by solder or the like.

  A ninth embodiment of the present invention will be described with reference to FIGS.

  The present embodiment is an example in which the semiconductor device shown in the first to eighth embodiments is employed in an inverter device mounted on a four-wheel drive hybrid electric vehicle having no motor drive battery.

  First, the configuration of a drive system of a four-wheel drive hybrid electric vehicle that does not have a motor drive battery will be described with reference to FIG.

  In FIG. 20, the control cable for transmitting the control signal is indicated by a thin solid line, and the electric cable for supplying electric energy is indicated by a solid line thicker than the solid line indicating the control cable.

  A four-wheel drive vehicle (hereinafter referred to as “four-wheel drive vehicle 1000”) that does not have a motor drive battery has a front wheel 1002 (main wheel) driven by an engine 1001 that is an internal combustion engine and a motor 1102 that is a rotating electric machine. The vehicle is a composite drive type vehicle including a drive system using an engine 1001 and a drive system using a motor 1102 so as to drive the wheels 1004 (slave wheels). The engine 1001 is a power source that constitutes the main drive system of the front wheels 1002, and generates rotational power by thermal energy over the entire travel range of the vehicle. A motor 1102 is a power source that constitutes a driven system of the rear wheels 1004. The motor 1102 travels from the start of the vehicle until it reaches the travel speed range of only the engine 1001, and a road surface having a small friction coefficient μ on the road surface such as an icy road. When a slip occurs in the front wheel 1002 driven by the engine 1001 and the power of the engine 1001 cannot be transmitted to the road surface, a rotational driving force is generated by electric energy.

  In this embodiment, the case where the front wheel 1002 is driven by the engine 1001 and the rear wheel 1004 is driven by the motor 1102 will be described as an example. However, the rear wheel 1004 is driven by the engine 1001 and the front wheel 1002 is driven by the motor 1102, respectively. It is good also as composition to do.

  The rotational power of the engine 1001 is shifted by the automatic transmission 1007 and then transmitted to the drive shaft 1003 of the front wheel 1002 via the power transmission mechanism 1008. As a result, the front wheels 1002 are driven by the engine 1001 over the entire vehicle travel range.

  The engine 1001 is mechanically connected to a vehicle-mounted auxiliary generator 1006 and a drive generator 1200 through a belt. Both generators operate in response to the rotational power of the engine 1001, and generate electric power for different uses.

  The on-vehicle auxiliary machine generator 1006 constitutes an on-vehicle 14-volt power supply, and generates DC power for charging the on-vehicle battery 1009 having a nominal output voltage of 12 volts and DC power for driving the on-vehicle auxiliary machine. .

  The drive-only generator 1200 constitutes a motor power source that exclusively generates drive power for the motor 1102, and constitutes an in-vehicle 42 volt system power source that can output higher power than the in-vehicle auxiliary generator 1006. The output voltage can be varied from 0 volts to 50 volts or 60 volts according to the required driving force for the motor 1102.

  In the present embodiment, a case where a drive-only generator 1200 is provided as a power source for the motor 1102 will be described as an example. In this case, it is possible to reduce the mounting space of the slave drive system for the slave drive wheels (rear wheels 1004 in this embodiment), and to drive the front and rear wheels by the power of the engine, because it is unnecessary to install a large capacity battery dedicated for motor drive. Compared to a four-wheel drive vehicle, a slave drive system for slave drive wheels can be provided at low cost.

  In addition, a motor driving battery may be mounted, and the electric power of the drive generator 1200 may be charged to the motor driving battery.

  In this embodiment, since the motor 1102 is driven by a low voltage and a large current using the drive-only generator 1200 as a power source, the high torque required in the running performance of the vehicle can be output, and the front and rear wheels are driven by the engine power. As a result, it is possible to provide a slave drive system that is comparable to a mechanical four-wheel drive vehicle.

  The on-vehicle auxiliary generator 1006 and the drive-only generator 1200 are arranged in the engine room together with the engine 1001. Since the drive-only generator 1200 is a water-cooled hermetic rotary electric machine, the mounting position of the drive-only generator 1200 with respect to the engine 1001 is more than the mounting position of the in-vehicle auxiliary generator 1006 that is an air-cooled open rotary electric machine with respect to the engine 1001. Can be in a low position.

  In this embodiment, as described above, since the motor drive battery is not provided, the DC power output from the drive-only generator 1200 is directly input to the DC side of the inverter device 100 via the relay 1300. Inverter device 100 converts the input DC power into three-phase AC power necessary for driving motor 1102, and supplies the converted three-phase AC power to motor 1102. The motor 1102 operates by receiving three-phase AC power, and generates rotational power necessary for driving the rear wheels 1004.

  The rotational power of the motor 1102 is transmitted to the drive shaft 1005 of the rear wheel 1004 via a clutch 1500 connected to the output side of the motor 1102 and a differential gear 1600 connected to the output side of the clutch 1500. Thereby, the rear wheel 1004 is from the start of the vehicle until reaching the travel speed range by the engine 1001 only, and below the maximum travel speed range where the rear wheel 1004 can be driven by the rotational power of the motor 1102. It is driven when slip occurs in the front wheel 1002 driven by the engine 1001 on a traveling road where the friction coefficient μ of the road surface is small, such as an icy road, and the power of the engine 1006 cannot be transmitted to the road surface.

  Therefore, according to the slave drive system of the present embodiment, the vehicle can be started and run with high torque while being stabilized, and when the front wheel 1002 slips, the front wheel 1002 is quickly gripped and the friction coefficient μ It is possible to stably and reliably run on a small traveling road.

  The differential gear 1600 is a power transmission mechanism for distributing the rotational power of the motor 1102 to the left and right drive shafts 1005, and a speed reducer for reducing the rotational power of the motor 1102 is integrally provided.

  A vehicle drive device (rotating electrical machine device) 1100 in which the motor 1102 and the inverter device 1101 are integrated is installed in a narrow space under the floor from the rear seat of the vehicle to the trunk room and in the vicinity of the differential gear 1600. In the present embodiment, the vehicle drive device (rotary electrical machine device) 1100 can be reduced in size by the electromechanically integrated vehicle drive device (rotary electrical machine device) 1100 and the vehicle drive device (rotary electrical machine device) 1100 is mounted on the vehicle. Can be improved.

  Further, in this embodiment, since the electromechanically integrated rotating electrical machine apparatus shown in FIG. 15 is used as the vehicle driving apparatus (rotating electrical machine apparatus) 1100, the vehicle driving apparatus (rotating electrical machine apparatus) 1100 can be further reduced in size, Mountability of the vehicle drive device (rotating electrical machine device) 1100 can be further improved.

  Further, the vehicle drive device (rotating electrical machine device) 1100, the clutch 1500, and the differential gear 1600 may be integrated into a unit structure.

  The clutch 1500 is an electromagnetic power shut-off mechanism that controls power transmission by controlling two clutch plates with electromagnetic force. The clutch 1500 is from the start of the vehicle until it reaches the travel speed range of only the engine 1001 and the motor 1102. Below the maximum speed range in which the rear wheels 1004 can be driven by rotational power, slip occurs on the front wheels 1002 driven by the engine 1001 on a road where the friction coefficient μ of the road surface is small, such as an icy road, and the power of the engine 1001 is reduced. The two clutch plates are engaged when they cannot be transmitted to the road surface, and the rotational power of the motor 1102 is controlled to be transmitted to the differential gear 1600. When the engine 1001 is in the traveling speed range, the two clutch plates are released. , Rotational power from motor 1102 to differential gear 1600 Is controlled such transmission is interrupted.

  The operation of each device constituting the driven system of the rear wheel 1004 is controlled by a signal or power supplied from the electronic circuit device 1400. The electronic circuit device 1400 includes a microcomputer that executes calculations necessary for controlling each device based on a program, a storage device in which data such as programs and maps and parameters necessary for the calculation of the microcomputer are stored in advance, resistors, and the like And a plurality of control boards on which a plurality of electronic components such as an integrated circuit (IC) on which the circuit elements are integrated are mounted.

  Control performed by the electronic circuit device 1400 includes field control for controlling the field current supplied to the drive-only generator 1200 to control the power generation of the drive-only generator 1200, and control of the contact of the relay 1300 to drive only. Relay control for controlling the electrical connection between the generator 1200 and the inverter device 1101, drive control for controlling the power conversion operation of the inverter device 1101 to control the driving of the motor 1102, and excitation supplied to the clutch 1500 There is a clutch control for controlling the engagement / disengagement of the clutch 1500 by controlling the current.

  Each device constituting the driven system of the rear wheel 1004 and the electronic circuit device 1400 are electrically connected by a signal cable or an electric cable. The in-vehicle battery 1009 and the electronic circuit device 1400 are electrically connected by an electric cable. Components of engine 1001 (air throttle valve, supply / exhaust valve, fuel injection valve), a transmission mechanism that constitutes transmission 1007, an engine control device that controls the operation of in-vehicle auxiliary generator 1006, and an antilock brake system The electronic circuit device 1400 is electrically connected by a local area network (LAN) cable between another on-vehicle control device (not shown) such as an anti-lock brake system control device that controls the operation of the caliper cylinder mechanism that constitutes the electronic circuit device 1400. Yes. As a result, the ownership information of each in-vehicle control device can be shared among the in-vehicle control devices, and the electronic circuit device 1400 transmits the shift position signal, the accelerator opening signal, and the engine speed signal from the engine control device to the anti-lock brake. The wheel speed signal can be acquired as input information from the system control device as necessary, and the input information is used for each control.

  In this embodiment, the case where the engine control device controls the operation of the speed change mechanism constituting the automatic transmission 1007 is taken as an example. However, when the vehicle is equipped with the transmission control device, the automatic transmission The operation of the transmission mechanism constituting 1007 is controlled by a transmission control device. In this case, the shift position signal input to the electronic circuit device 1400 is acquired from the transmission control device via the LAN cable.

  FIG. 21 shows an external configuration of a vehicle drive device (rotating electrical machine device) 1100 in which a motor 1102 and an inverter device 1101 are integrated.

  In FIG. 21, the inverter device 1101 is disposed on the top of the rotating electrical machine 1102. In the present embodiment, the housing 901 of the inverter device 1101 is fixed to the housing of the rotating electrical machine 1102 by screws 951 screwed between the housing 901 of the inverter device 1101 and the housing of the rotating electrical machine 1102. The inverter device 1101 and the rotating electrical machine 1102 are integrated. The dimension of the inverter device 1101 in the height direction (the direction in which the inverter device 1101 and the rotating electric machine 1102 are combined) is less than half of the outer diameter of the rotating electric machine 1102. Such a dimension can be said to be very suitable for a vehicle drive device (rotary electrical machine device) 1100 installed in a narrow space near the differential gear 1600 under the floor from the rear seat of the vehicle to the trunk room.

  An output shaft 964 protrudes from the housing end surface at one end in the axial direction of the rotating electrical machine 1102 so as to extend in the horizontal direction. A positive side DC harness 961 and a negative side DC harness 962 are formed on the side surface of the housing 901 in the direction in which the output shaft 964 extends so as to protrude in the horizontal direction (the same direction as the direction in which the output shaft 964 extends). The positive side DC harness 961 and the negative side DC harness 962 are electrically connected to the drive-only generator 1200 via the relay 1300 shown in FIG.

  The electrical connection between the inverter device 1101 and the rotating electrical machine 1102 is a bus bar extending in the vertical direction (the direction in which the inverter device 1101 and the rotating electrical machine 1102 are combined) at the end of the rotating electrical machine 1102 opposite to the output shaft 964 side. (Not shown). A sensor (resolver) for detecting the magnetic pole position of the rotating electrical machine 1102 is disposed at the end of the rotating electrical machine 1102 opposite to the output shaft 964 side. The signal line of the sensor is upward at the end of the rotating electrical machine 1102 opposite to the output shaft 964 side (the direction in which the inverter device 1101 and the rotating electrical machine 1102 are combined is directed from the rotating electrical machine 1102 to the inverter device 1101). It extends and is electrically connected to the control circuit of the inverter device 1101.

  In the present embodiment, the case where the electrical connection between the inverter device 1101 and the rotating electrical machine 1102 is performed inside the housing of the vehicle drive device (rotating electrical machine device) 1100 will be described as an example. The electrical connection between the inverter device 1101 and the rotating electrical machine 1102 may be performed outside the housing of the vehicle drive device (rotating electrical machine device) 1100 via a harness or the like.

  A connector 963 is attached to the side surface of the housing 901 from which the positive side DC harness 961 and the negative side DC harness 962 protrude. The connector 963 receives input information (for example, a torque command signal, a rotation speed command signal, a fail signal from the host, etc.) from a host control device arranged outside the inverter device 1101 in the casing 901 of the inverter device 1101. It is for taking in the control circuit accommodated, and for taking in the power source for operating the control circuit. Furthermore, output information (for example, lower-side fail signal, etc.) to be transmitted to the higher-level control device This is for taking out from the inverter device 1101. The connector 963 is connected to a signal line connector that is electrically connected to the host controller and extends to the inverter device 1101.

  As described above, in this embodiment, the semiconductor device shown in the first to eighth embodiments is employed in an inverter device mounted on a four-wheel drive hybrid electric vehicle that does not have a motor drive battery. The case has been described as an example. The semiconductor device shown in the first to eighth embodiments can also be applied to a power conversion device such as an inverter device mounted in the following in-vehicle electric system.

  As one of them, the generator for a vehicle is driven by the driving force of the engine to generate three-phase AC power, and the generated three-phase AC power is converted by a power conversion device (rectifier) composed of switching semiconductor elements. There is a system in which DC power is rectified and the DC power is charged into a 14-volt in-vehicle battery (nominal output voltage 12 volts). The semiconductor devices shown in the first to eighth embodiments can be applied to the power converter (rectifier).

  As another one, when the engine is restarted (when the engine is stopped when the vehicle is temporarily stopped such as waiting for a signal, and when the engine is restarted when the vehicle is started), an inverter device constituted by switching semiconductor elements, DC power supplied from a 14-volt in-vehicle battery is converted into three-phase AC power, which is supplied to a vehicle motor generator, the vehicle motor generator is operated as a motor, and the generated electric power is supplied to the engine. In addition to starting the engine by transmitting it, the motor generator for the vehicle is operated as a generator in response to the driving force from the engine, and the generated three-phase AC power is converted to DC power by the inverter device. There is a system that charges a 14-volt in-vehicle battery. In this case, the vehicular motor generator and the inverter device have an integral structure. The semiconductor devices shown in the first to eighth embodiments can be applied to the inverter device.

In addition, as another example, when the engine is restarted (when the vehicle is temporarily stopped, such as waiting for a signal, when the engine is stopped and when the vehicle is started, the engine is restarted), and during the acceleration operation of the vehicle, the switching semiconductor DC power supplied from a 42 volt in-vehicle battery (nominal output voltage 36 volts) is converted into three-phase AC power by an inverter device composed of elements, and is supplied to a vehicle motor generator. The motor generator is operated as an electric motor, and the generated electric power is transmitted to the engine to start the engine, and transmitted to the wheels to assist the driving force of the engine. The vehicle motor generator is operated as a generator, and the generated three-phase AC power is converted into DC power by an inverter device. There is a system to charge the vehicle battery of the door system. In this case, a 14-volt in-vehicle battery is connected to a 42-volt in-vehicle battery via a step-up / step-down device (DCDC converter). The semiconductor devices shown in the first to eighth embodiments can be applied to the inverter device.

1 is a circuit diagram showing a configuration of a motor drive device using a semiconductor device according to a first embodiment of the present invention. 1 is an equivalent circuit diagram of a semiconductor device according to a first embodiment of the present invention. 1 is a perspective view showing a specific configuration of a semiconductor device according to a first embodiment of the present invention. 1 is a plan view showing a specific configuration of a semiconductor device according to a first embodiment of the present invention. FIG. 5 is a cross-sectional view taken along the line A-A ′ of FIG. 4. It is explanatory drawing of the analysis result of the inductance in the semiconductor device by the 1st Embodiment of this invention. It is explanatory drawing of the current distribution of the current pathway in the semiconductor device by the 1st Embodiment of this invention. 1 is a plan view of an inverter using a semiconductor device according to a first embodiment of the present invention. It is a perspective view which shows the specific structure of the semiconductor device by the 2nd Embodiment of this invention. It is a perspective view which shows the specific structure of the semiconductor device by the 3rd Embodiment of this invention. It is a top view which shows the specific structure of the semiconductor device by the 4th Embodiment of this invention. It is A-A 'sectional drawing of FIG. It is a perspective view which shows the specific structure of the semiconductor device by the 5th Embodiment of this invention. It is a top view which shows the specific structure of the semiconductor device by the 5th Embodiment of this invention. It is A-A 'sectional drawing of FIG. It is sectional drawing which shows the specific structure of the semiconductor device by the 6th Embodiment of this invention. It is sectional drawing which shows the specific structure of the semiconductor device by the 7th Embodiment of this invention. It is a perspective view which shows the specific structure of the semiconductor device by the 8th Embodiment of this invention. It is a principal part side view of FIG. It is a block diagram of the drive system of the four-wheel drive hybrid electric vehicle which does not have a battery for motor drive. It is an external appearance block diagram of the vehicle drive device (rotary electrical machinery apparatus) which integrated the motor and the inverter apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 2, 9, 10 ... Lead 3 ... Wire 15 ... Insulating layer 11 ... Metal base 13, 14, 16 ... Substrate wiring layer 12 ... Semiconductor switching element 21, 23 ... Heat spreader 40, 41, 42 ... Resin

Claims (15)

A semiconductor switching element on the upper arm side disposed in the upper arm, a semiconductor switching element on the lower arm side disposed in the lower arm, a source terminal of the semiconductor switching element on the upper arm side, and a semiconductor switching element on the lower arm side A first wiring composed of a wiring layer connected to the drain terminal of the element;
A semiconductor device in which the first wiring is connected to an output line, the drain terminal of the semiconductor switching element on the upper arm side is connected to a power supply line, and the source terminal of the semiconductor switching element on the lower arm side is connected to an earth line. There,
The second wiring is connected in parallel with the first wiring, and has a second wiring in which a low-frequency current component flows more easily than the first wiring when the upper arm side or lower arm side semiconductor switching element is switched. Semiconductor device. The semiconductor device according to claim 1,
The semiconductor switching elements on the upper arm side and the lower arm side are composed of semiconductor chips,
A first heat spreader which is connected to a drain terminal of the upper arm side semiconductor switching element and is larger than a chip size of the upper arm side semiconductor switching element and has a thermal diffusion property;
And a second heat spreader which is connected to a drain terminal of the lower arm side semiconductor switching element and which is larger than a chip size of the lower arm side semiconductor switching element and has thermal diffusibility. apparatus. The semiconductor device according to claim 2,
The first wiring is a wiring layer formed on a substrate;
The second heat spreader is connected and fixed to the first wiring;
The first heat spreader is connected and fixed to another wiring layer formed on the substrate,
The first wiring and the another wiring layer are connected by the second wiring,
The first wiring and the another wiring layer are configured in a loop shape on the substrate. The semiconductor device according to claim 3.
A semiconductor device, wherein the semiconductor switching elements on the upper arm side and the lower arm side are individually or collectively sealed with resin. The semiconductor device according to claim 3.
A semiconductor device, wherein the upper arm side and lower arm side semiconductor switching elements and the substrate are integrally sealed with resin. The semiconductor device according to claim 1,
The second wiring is
A first member connected to a source terminal of the semiconductor switching element on the upper arm side;
A second member connected to the drain terminal of the semiconductor switching element on the lower arm side;
A semiconductor device comprising the first member and a third member connecting the second member. The semiconductor device according to claim 1,
A third wiring connected to the drain terminal of the semiconductor switching element on the upper arm side;
A fourth wiring connected to the source terminal of the semiconductor switching element on the lower arm side,
The semiconductor device, wherein the third wiring and the fourth wiring are arranged close to each other within a range that maintains an insulation distance. The semiconductor device according to claim 2,
A part of the second wiring has a portion arranged in parallel with the side surface of the first heat spreader,
In the parallel arrangement section, a part of the second wiring and the side surface of the first heat spreader are arranged close to each other within a range that maintains an insulation distance. The semiconductor device according to claim 3.
Having another wiring layer formed on the substrate;
The fourth wiring connected to the source terminal of the lower arm side semiconductor switching element is connected to the further wiring layer,
Furthermore, having a lead connected to the further wiring layer,
The semiconductor device, wherein the third wiring connected to the drain terminal of the semiconductor switching element on the upper arm side and the lead are arranged close to each other as long as an insulation distance is maintained. A semiconductor switching element on the upper arm side disposed in the upper arm, a semiconductor switching element on the lower arm side disposed in the lower arm, a source terminal of the semiconductor switching element on the upper arm side, and a semiconductor switching element on the lower arm side A first wiring composed of a wiring layer connected to the drain terminal of the element;
A semiconductor device in which the first wiring is connected to an output line, the drain terminal of the semiconductor switching element on the upper arm side is connected to a power supply line, and the source terminal of the semiconductor switching element on the lower arm side is connected to an earth line. There,
A second wiring connected in parallel with the first wiring;
The second wiring has a characteristic that a current flowing gradually increases when the upper arm side or lower arm side semiconductor switching element is switched,
The semiconductor device according to claim 1, wherein the first wiring has a characteristic in which, when the upper arm side or lower arm side semiconductor switching element is switched, the current that flows once increases and then the current gradually decreases. A semiconductor switching element on the upper arm side arranged in the upper arm, a semiconductor switching element on the lower arm side arranged in the lower arm, a source terminal of the semiconductor switching element on the upper arm side, and a semiconductor switching on the lower arm side A first wiring composed of a wiring layer connected to the drain terminal of the element;
A semiconductor device in which the first wiring is connected to an output line, the drain terminal of the semiconductor switching element on the upper arm side is connected to a power supply line, and the source terminal of the semiconductor switching element on the lower arm side is connected to an earth line. There,
The first wiring is a wiring layer formed by etching a metal foil formed on a substrate,
A semiconductor device comprising: a second wiring that is connected in parallel to the first wiring and is a metal lead thicker than the first wiring. A rotating electrical machine mounted on a vehicle and electrically connected to an in-vehicle power source;
A control device provided between the rotating electrical machine and the in-vehicle power source to control electric power,
The control device constitutes a power conversion circuit by the semiconductor device according to any one of claims 1, 10, and 11.
An in-vehicle electric system characterized by the above. The in-vehicle electric system according to claim 12,
The rotating electrical machine is an electric motor that generates a driving force of a wheel different from a wheel driven by an internal combustion engine among front and rear wheels,
The control device is an inverter device that converts DC power into AC power;
The electric motor generates the driving force when it is the on-vehicle power source and the DC power supplied from the generator driven by the internal combustion engine is converted into AC power by the inverter device and supplied to the electric motor. To
An in-vehicle electric system characterized by the above. The in-vehicle electric system according to claim 12,
The rotating electrical machine is mechanically connected to an internal combustion engine, generates a starting driving force when starting the internal combustion engine, supplies the starting driving force to the internal combustion engine, and receives a driving force from the internal combustion engine A motor generator that generates alternating current power and supplies it to the control device, and outputs an auxiliary driving force to the wheels during acceleration of the vehicle,
The control device is an inverter device that controls transmission and reception of power between the battery that is the on-vehicle power source and the motor generator.
An in-vehicle electric system characterized by the above. The in-vehicle electric system according to claim 12,
The rotating electrical machine is mechanically connected to an internal combustion engine, generates a starting driving force when the internal combustion engine is started, supplies the starting driving force to the internal combustion engine, and receives a driving force from the internal combustion engine. A motor generator that generates alternating current power and supplies it to the control device;
The control device is an inverter device that controls transmission and reception of power between the battery that is the on-vehicle power source and the motor generator.
An in-vehicle electric system characterized by the above.

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