JP2009129974A - Power module and motor drive device using the same - Google Patents

Power module and motor drive device using the same Download PDF

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JP2009129974A
JP2009129974A JP2007300656A JP2007300656A JP2009129974A JP 2009129974 A JP2009129974 A JP 2009129974A JP 2007300656 A JP2007300656 A JP 2007300656A JP 2007300656 A JP2007300656 A JP 2007300656A JP 2009129974 A JP2009129974 A JP 2009129974A
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positive
power module
negative
wiring board
electrode
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Kunihiro Takenaka
国浩 竹中
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Yaskawa Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power module which is compact and can be mounted on any structure, and to provide a motor drive device using the same. <P>SOLUTION: The power module constitutes an n-phase inverter, wherein (n) is a natural number. The power module comprises a positive-electrode side module (2) having a positive-electrode power supply terminal, an n-phase positive-electrode output terminal, (n) positive-electrode side semiconductor chips connected between the positive-electrode power supply terminal and n-phase positive-electrode output terminal, a positive-electrode gate terminal connected to the gate of the positive-electrode side semiconductor chip, and a positive-electrode side wiring board for connection; a negative-electrode side module (3) having a negative-electrode side power supply terminal, an n-phase negative-electrode output terminal, (n) negative-electrode side semiconductor chips connected between the negative-electrode side power supply terminal and n-phase negative-electrode output terminal, a negative-electrode gate terminal connected to the gate of the negative-electrode side semiconductor chip, and a negative-electrode side wiring board for connection; and a flexible substrate (4) connecting the n-phase positive-electrode output terminal and n-phase negative-electrode terminal to each other. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、モータドライブ用インバータに使用するパワーモジュールに関するものである。 The present invention relates to a power module used for a motor drive inverter.

以下に、パワーモジュールについて、図に基づいて説明する。まず、従来例１として、図５を用いて一般的なパワーモジュールの構造を説明し、次に、その応用例に、従来例２、３として、製造方法が簡単で高信頼性なパワーモジュールを、フレキシブル基板を用いて実現した例について説明する（例えば、特許文献１、２）。
図５は、従来例１として、一般的なパワーモジュールの断面構造を示すものである。また、図６および図７は、それぞれ従来例２および３として、フレキシブル基板を備えたパワーモジュールを示すものである。
各図において、１１０は半導体チップ、１２０は絶縁基板、１２１は絶縁基板上に形成された配線、１２２ははんだ、１３０はＡｌワイヤ、１４０はフレキシブル基板、１４１はリード部、１５０は電力回路基板、１６０はケース、１６１は端子、１７０は制御回路基板、１７１は制御チップである。 Below, a power module is demonstrated based on figures. First, the structure of a general power module will be described as a conventional example 1 with reference to FIG. 5, and then, as an application example, a power module with a simple manufacturing method and a high reliability will be given as conventional examples 2 and 3. An example realized using a flexible substrate will be described (for example, Patent Documents 1 and 2).
FIG. 5 shows a cross-sectional structure of a general power module as Conventional Example 1. 6 and 7 show a power module provided with a flexible substrate as Conventional Examples 2 and 3, respectively.
In each figure, 110 is a semiconductor chip, 120 is an insulating substrate, 121 is a wiring formed on the insulating substrate, 122 is solder, 130 is an Al wire, 140 is a flexible substrate, 141 is a lead portion, 150 is a power circuit substrate, Reference numeral 160 denotes a case, 161 denotes a terminal, 170 denotes a control circuit board, and 171 denotes a control chip.

まず、従来例１について、図５を用いて説明する。パワーモジュールの一般的構造は、あらかじめ配線１２１が形成された絶縁基板１２０上に、半導体チップ１１０をはんだ１２２などの導電材料を用いて実装し、絶縁基板上に実装された半導体チップ１１０の絶縁基板と反対の面にＡｌワイヤ１３０などにより配線する構造となっている。ここで、モータドライブ用途のパワーモジュールでは、絶縁基板１２０上に形成されている配線１２１とＡｌワイヤ１３０を用いて、３相インバータ回路やＨブリッジ回路を形成することになる。これらを電力回路基板１５０とする。図５は、１枚の絶縁基板上に半導体チップをすべて配置して、３相インバータ回路を構成する例である。なお、図５では図示していないが、この電力回路基板５０はケースに入れられ、外部との接続のためリードフレームなどの端子が設けられるのが一般的である。 First, Conventional Example 1 will be described with reference to FIG. A general structure of a power module is that a semiconductor chip 110 is mounted on an insulating substrate 120 on which wirings 121 are formed in advance using a conductive material such as solder 122, and the insulating substrate of the semiconductor chip 110 mounted on the insulating substrate. It is structured to be wired with an Al wire 130 or the like on the opposite surface. Here, in a power module for motor drive, a three-phase inverter circuit and an H-bridge circuit are formed using the wiring 121 and the Al wire 130 formed on the insulating substrate 120. These are referred to as a power circuit board 150. FIG. 5 shows an example in which a three-phase inverter circuit is configured by arranging all semiconductor chips on a single insulating substrate. Although not shown in FIG. 5, the power circuit board 50 is generally placed in a case and provided with terminals such as a lead frame for connection to the outside.

次に、フレキシブル基板を用いた従来例２、３について図６、７を用いて説明する。図５に示したパワーモジュールは、前述したように、絶縁基板１２０上に半導体チップ１１０が実装されており、絶縁基板上に実装された半導体チップ１１０の絶縁基板と反対の面にＡｌワイヤ１３０やフレキシブル基板１４０により配線している例である（例えば、特開２００６―３３２５７９号公報）。図６では、フレキシブル基板１４０に半導体チップを駆動するための制御チップ１７１が実装され、これを制御回路基板１７０とする。このフレキシブル基板１４０は、複数の半導体チップに接続できるよう複数のリード部１４１を有している。また、フレキシブル基板１４０のリード部１４１が、はんだなどの導電材料を介して、半導体チップ１に接続されている。この従来例２でも、１枚の絶縁基板上に半導体チップをすべて配置し、３相インバータ回路を構成する例であり、電力回路基板と制御回路基板は同一平面状に配置されている。この例では、電力回路基板および制御回路基板はケース１６０に入れられ、パワーモジュールと外部との信号および電力のやり取りは端子１６１を介して行われる。 Next, conventional examples 2 and 3 using a flexible substrate will be described with reference to FIGS. In the power module shown in FIG. 5, the semiconductor chip 110 is mounted on the insulating substrate 120 as described above, and the Al wire 130 or the like is formed on the surface opposite to the insulating substrate of the semiconductor chip 110 mounted on the insulating substrate. In this example, wiring is performed by the flexible substrate 140 (for example, Japanese Patent Laid-Open No. 2006-332579). In FIG. 6, a control chip 171 for driving a semiconductor chip is mounted on the flexible board 140, and this is referred to as a control circuit board 170. The flexible substrate 140 has a plurality of lead portions 141 so that it can be connected to a plurality of semiconductor chips. In addition, the lead portion 141 of the flexible substrate 140 is connected to the semiconductor chip 1 via a conductive material such as solder. This conventional example 2 is also an example in which all semiconductor chips are arranged on one insulating substrate to constitute a three-phase inverter circuit, and the power circuit board and the control circuit board are arranged on the same plane. In this example, the power circuit board and the control circuit board are placed in a case 160, and exchange of signals and power between the power module and the outside is performed via a terminal 161.

また、図７に示したパワーモジュールは、フレキシブル基板１４０を絶縁基板として使用し、フレキシブル基板を屈曲させて制御回路基板と接続している例である（例えば、特開２００２―９３９９５号公報）。図７では、フレキシブル基板１４０に金属基板１２３を貼り付けたものを電力回路基板１５０としている。前記フレキシブル基板１４０上に半導体チップ１１０を実装し、図示しないあらかじめ形成されたフレキシブル基板１４０上の配線と端子６１とＡｌワイヤ１３０により配線され、電力回路基板１５０となる。半導体チップ１１０を駆動する制御チップ１７１は制御回路基板１７０として、電力回路基板１１５０上に配置され、フレキシブル基板１４０を屈曲させて、電力回路基板と制御回路基板が接続されている。この従来例３では、１枚のフレキシブル基板上に半導体チップを配置し、３相インバータ回路を構成する例であり、電力回路基板と制御回路基板は、電力回路基板のフレキシブル基板の部分を屈曲させることで、立体的な配置としている。この例でも、電力回路基板および制御回路基板はケース１６０に入れられ、パワーモジュールと外部との信号および電力のやり取りは端子１６１などを介して行われる。
特開２００６―３３２５７９号公報（図１） 特開２００２―９３９９５号公報（図１） Further, the power module shown in FIG. 7 is an example in which the flexible substrate 140 is used as an insulating substrate, and the flexible substrate is bent and connected to the control circuit substrate (for example, JP 2002-93995 A). In FIG. 7, a power circuit board 150 is formed by attaching a metal board 123 to a flexible board 140. The semiconductor chip 110 is mounted on the flexible substrate 140, and the power circuit substrate 150 is formed by wiring on the flexible substrate 140 (not shown), the terminal 61, and the Al wire 130. The control chip 171 that drives the semiconductor chip 110 is disposed on the power circuit board 1150 as the control circuit board 170, and the flexible circuit board 140 is bent to connect the power circuit board and the control circuit board. This conventional example 3 is an example in which a semiconductor chip is arranged on one flexible substrate to constitute a three-phase inverter circuit. The power circuit board and the control circuit board bend the flexible substrate portion of the power circuit board. Therefore, it is set as a three-dimensional arrangement. Also in this example, the power circuit board and the control circuit board are placed in the case 160, and exchange of signals and power between the power module and the outside is performed via the terminals 161 and the like.
JP 2006-332579 A (FIG. 1) Japanese Patent Laid-Open No. 2002-93995 (FIG. 1)

従来例１、２の一般的なパワーモジュールやフレキシブル基板を用いてインバータ回路を構成するパワーモジュールにおいては、３相インバータ回路を構成する半導体チップをすべて同一平面上の絶縁基板に配置するため、パワーモジュールの小形化においては、半導体チップ実装面積と電流容量を考慮した配線スペースの点から限界があるという問題があった。特に、可動部を有するモータを使用した装置（以下、全体装置とする）に、モータドライブ装置としてこれらのパワーモジュールを用いるときに、全体装置の制約から、可動部および屈曲部などのスペースにパワーモジュールを配置したい場合に、このパワーモジュールの大きさや設置方法は大きな問題であり、小形であることと装置に適した形状が求められる。また、従来例３のような電力回路基板と制御回路基板を重ねて配置するパワーモジュールにおいても、電力回路基板の大きさ以下の小形化は望めず、３相インバータ回路を構成する半導体チップをすべて平面的に配置する点においては、従来例１、２と変わりない。そのため、パワーモジュールの小形化、最適形状化という点では問題があった。   In a power module that constitutes an inverter circuit using a general power module or a flexible substrate of Conventional Examples 1 and 2, all the semiconductor chips constituting the three-phase inverter circuit are arranged on an insulating substrate on the same plane. The downsizing of the module has a problem that there is a limit in terms of wiring space in consideration of the semiconductor chip mounting area and current capacity. In particular, when these power modules are used as a motor drive device in a device that uses a motor having a movable part (hereinafter referred to as an overall device), the power in a space such as a movable part and a bent part is limited due to restrictions of the overall device. When a module is to be arranged, the size and installation method of the power module is a big problem, and a small size and a shape suitable for the apparatus are required. In addition, even in the power module in which the power circuit board and the control circuit board are arranged so as to overlap with each other as in Conventional Example 3, it is not possible to reduce the size of the power circuit board or less, and all the semiconductor chips constituting the three-phase inverter circuit are used. In the point arrange | positioned planarly, it is not different from the prior art examples 1 and 2. Therefore, there has been a problem in terms of downsizing and optimum shape of the power module.

本発明はこのような問題点に鑑みてなされたものであり、パワーモジュールの小形化と同時に、パワーモジュールを使用したモータドライブ装置を設置する全体装置に適した最適な形状のパワーモジュールを提供することを目的とする。   The present invention has been made in view of the above problems, and provides a power module having an optimal shape suitable for the entire apparatus in which a motor drive device using the power module is installed at the same time as reducing the size of the power module. For the purpose.

上記問題を解決するため、本発明は、次のように構成したのである。
請求項1記載の発明は、自然数ｎのｎ相インバータを構成するパワーモジュールにおいて、正極電源端子と、ｎ相正極出力端子と、前記正極電源端子と前記ｎ相正極出力端子間に接続されたｎ個の正極側半導体チップと、前記正極側半導体チップのゲートに接続した正極ゲート端子と、接続用正極側配線板と、前記接続用正極側配線板を貼り付けた正極側絶縁基板と、を備えた正極側モジュールと、負極電源端子と、ｎ相負極出力端子と、前記負極電源端子と前記ｎ相負極出力端子間に接続されたｎ個の負極側半導体チップと、前記負極側半導体チップのゲートに接続した負極ゲート端子と、接続用負極側配線板と、前記接続用負極側配線板を貼り付けた負極側絶縁基板と、を備えた負極側モジュールと、前記ｎ相正極出力端子と前記ｎ相負極端子を接続するフレキシブル基板と、を備えることを特徴とするものである。 In order to solve the above problem, the present invention is configured as follows.
The invention according to claim 1 is a power module constituting an n-phase inverter having a natural number n, a positive power supply terminal, an n-phase positive output terminal, and an n connected between the positive power supply terminal and the n-phase positive output terminal. Each positive electrode side semiconductor chip, a positive electrode gate terminal connected to the gate of the positive electrode side semiconductor chip, a positive electrode side wiring board for connection, and a positive electrode side insulating substrate to which the positive electrode side wiring board for connection is attached. A positive electrode module, a negative power supply terminal, an n-phase negative output terminal, n negative semiconductor chips connected between the negative power supply terminal and the n-phase negative output terminal, and a gate of the negative semiconductor chip A negative electrode terminal comprising: a negative electrode gate terminal connected to the negative electrode side; a negative electrode side wiring board for connection; and a negative electrode side insulating substrate attached with the negative electrode side wiring board for connection; the n-phase positive electrode output terminal; and the n Phase negative electrode And a flexible substrate to which the terminals are connected.

請求項２記載の発明は、請求項１記載のパワーモジュールにおいて、前記接続用正極側配線板と前記接続用負極側配線板は、それぞれ１以上１０以下のいずれかの配線板数で構成されるとを特徴とするものである。
請求項３記載の発明は、請求項１記載のパワーモジュールにおいて、前記ｎは１であることを特徴とするものである。
請求項４記載の発明は、請求項１記載のパワーモジュールにおいて、前記ｎは２であることを特徴とするものである。
請求項５記載の発明は、請求項１記載のパワーモジュールにおいて、前記ｎは３であることを特徴とするものである。 According to a second aspect of the present invention, in the power module according to the first aspect, each of the connection positive-side wiring board and the connection negative-side wiring board is configured with any number of wiring boards of 1 or more and 10 or less. It is characterized by.
A third aspect of the present invention is the power module according to the first aspect, wherein the n is 1.
According to a fourth aspect of the present invention, in the power module according to the first aspect, the n is 2.
According to a fifth aspect of the present invention, in the power module according to the first aspect, the n is 3.

請求項６記載の発明は、請求項１記載のパワーモジュールにおいて、前記正極側半導体チップ及び負極側半導体チップをフェイスアップ実装及びフェイスダウン実装の２つを用いて実装したことを特徴とするものである。
請求項７記載の発明は、請求項１記載のパワーモジュールにおいて、前記正極側配線板および前記負極側配線板は樹脂系であることを特徴とするものである。
請求項８記載の発明は、請求項１記載のパワーモジュールにおいて、前記正極側配線板および前記負極側配線板はセラミック系であることを特徴とするものである。
請求項９記載の発明は、請求項１記載のパワーモジュールにおいて、前記正極側絶縁基板と前記負極側絶縁基板は、樹脂で覆われたことを特徴とするものである。
請求項１０記載の発明は、モータドライブ装置において、請求項１乃至９のいずれかに記載されたパワーモジュールを搭載することを特徴とするものである。 The invention according to claim 6 is the power module according to claim 1, wherein the positive-side semiconductor chip and the negative-side semiconductor chip are mounted using two of face-up mounting and face-down mounting. is there.
A seventh aspect of the present invention is the power module according to the first aspect, wherein the positive side wiring board and the negative side wiring board are resin-based.
According to an eighth aspect of the present invention, in the power module according to the first aspect, the positive side wiring board and the negative side wiring board are ceramic.
According to a ninth aspect of the present invention, in the power module according to the first aspect, the positive electrode side insulating substrate and the negative electrode side insulating substrate are covered with a resin.
According to a tenth aspect of the present invention, in the motor drive device, the power module according to any one of the first to ninth aspects is mounted.

請求項１乃至９記載の発明によると、小形で、どのような構造にも搭載可能なパワーモジュールを提供できる。
請求項１０記載の発明によると、小形で、どのような構造にも搭載可能なパワーモジュールを用いることで、どのような場所にも設置可能なモータドライブ装置を提供できる。 According to the first to ninth aspects of the invention, it is possible to provide a small-sized power module that can be mounted on any structure.
According to the tenth aspect of the present invention, it is possible to provide a motor drive device that can be installed in any place by using a small-sized power module that can be mounted in any structure.

以下、本発明の実施の形態について図を参照して説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は、本発明の第一の実施例に係るパワーモジュールの断面模式図で上面模式図である。ここで、１はパワーモジュール、２は正極側モジュール、３は負極側モジュール、４はフレキシブル基板である。図２は、本発明のパワーモジュールの３相インバータ回路図である。図３は第一の実施例のパワーモジュールの全体装置適用例である。また、図４は、本発明の第二の実施例に係るパワーモジュールの断面模式図である。本発明の構成要素が従来技術と同じものについては、同一符号を付してその説明を省略し、異なる点のみ説明する。図において、２４は配線板、２５は絶縁樹脂、８０はパワーモジュールの回路、８１は８０の上アーム回路、８２は８０の下アーム回路、８３はＰ側配線、８４はＮ側配線、９０はパワーモジュールを取り付ける対象、すなわちここでは全体装置の一部である。   FIG. 1 is a schematic cross-sectional view of a power module according to a first embodiment of the present invention and is a schematic top view. Here, 1 is a power module, 2 is a positive side module, 3 is a negative side module, and 4 is a flexible substrate. FIG. 2 is a three-phase inverter circuit diagram of the power module of the present invention. FIG. 3 shows an application example of the entire power module of the first embodiment. FIG. 4 is a schematic cross-sectional view of a power module according to the second embodiment of the present invention. Constituent elements of the present invention that are the same as those of the prior art will be denoted by the same reference numerals, description thereof will be omitted, and only differences will be described. In the figure, 24 is a wiring board, 25 is an insulating resin, 80 is a circuit of a power module, 81 is an upper arm circuit of 80, 82 is a lower arm circuit, 83 is a P side wiring, 84 is an N side wiring, 90 is An object to which the power module is attached, that is, a part of the entire apparatus here.

本発明が特許文献１、２と異なる部分を、３相インバータ回路で説明する。本発明の特徴は、上アームを構成する半導体チップと、下アームを構成する半導体チップを、異なる絶縁基板上に実装することである。このとき、上アーム半導体チップはチップ上の回路面が絶縁基板側を向くフリップチップ実装（フェイスダウン実装）され、下アーム半導体チップはチップ上の回路面が絶縁基板と反対を向くフェイスアップ実装される。そして、半導体チップが実装された絶縁基板をフレキシブル基板で接続し、３相インバータ回路の一部を構成してパワーモジュールとする。なお、ここでは、３相インバータ回路について説明したが、Ｈブリッジ回路では、上下アームにおける半導体チップの数が８個に減るだけ、ハーフブリッジ回路では、上下アームにおける半導体チップの数が４個に減るだけで同様に構成できるため、ここでは説明を省略する。また、図１では図示していないが、半導体チップを駆動する制御チップを本発明の構成要素である絶縁基板、もしくはフレキシブル基板上に実装しても良い。これにより、小形で、設置場所を選ばないパワーモジュールを得ることができる。   The difference between the present invention and Patent Documents 1 and 2 will be described using a three-phase inverter circuit. A feature of the present invention is that the semiconductor chip constituting the upper arm and the semiconductor chip constituting the lower arm are mounted on different insulating substrates. At this time, the upper arm semiconductor chip is flip-chip mounted (face-down mounting) with the circuit surface on the chip facing the insulating substrate, and the lower arm semiconductor chip is mounted face-up with the circuit surface on the chip facing away from the insulating substrate. The Then, the insulating substrate on which the semiconductor chip is mounted is connected by a flexible substrate, and a part of the three-phase inverter circuit is configured to form a power module. Although the three-phase inverter circuit has been described here, the number of semiconductor chips in the upper and lower arms is reduced to eight in the H bridge circuit, and the number of semiconductor chips in the upper and lower arms is reduced to four in the half bridge circuit. Since it can be similarly configured only by this, the description is omitted here. Although not shown in FIG. 1, a control chip for driving a semiconductor chip may be mounted on an insulating substrate or a flexible substrate which is a component of the present invention. Thereby, it is possible to obtain a small-sized power module that can be installed anywhere.

あらためて、本発明の実施例を詳細に説明する。図１に示すように、２枚の絶縁基板２０上に、３相インバータ回路を構成するための上下アーム半導体チップ１１、１２をそれぞれ実装する。ここで、上アーム半導体チップ１１はフリップチップ実装、下アーム半導体チップ１２は、フェイスアップ実装することは前述した通りである。ここで使用する半導体チップは具体的には、ＩＧＢＴ、還流ダイオード、ＭＯＳＦＥＴなどが考えられるが、ここでは、ＩＧＢＴと還流ダイオードを例として説明した。これらの半導体チップの実装においては、接合材として、それぞれはんだを用いて行うことが良い。   The embodiment of the present invention will be described in detail again. As shown in FIG. 1, upper and lower arm semiconductor chips 11 and 12 for constituting a three-phase inverter circuit are mounted on two insulating substrates 20, respectively. Here, as described above, the upper arm semiconductor chip 11 is flip-chip mounted, and the lower arm semiconductor chip 12 is face-up mounted. Specifically, the semiconductor chip used here may be an IGBT, a freewheeling diode, a MOSFET, or the like. Here, the IGBT and the freewheeling diode have been described as examples. The mounting of these semiconductor chips is preferably performed using solder as a bonding material.

半導体チップが実装された２枚の絶縁基板を、フレキシブル基板４０で接続する。フレキシブル基板と絶縁基板の接続にあたっては、はんだ付、導電性ゴム、導電性接着材などを用いると良い。このようにして、図２に示した３相インバータ回路を構成する。本発明のパワーモジュールには、図２に示したように、回路中のＰ側配線８３、Ｎ側配線８４は含まない。よって、３相インバータ回路を完成させるには、前述した半導体チップが実装された絶縁基板とは別に、樹脂系、セラミック系もしくは金属系の配線板を用いて、回路図におけるＰ側配線８３、Ｎ側配線８４に相当する配線を作製しなければならない。ここで、配線板以外にブスバーなどの金属体をそのまま用いても良いが、全体装置への設置を考慮すると配線板を用いた方が取り扱いに優れている。   Two insulating substrates on which semiconductor chips are mounted are connected by a flexible substrate 40. In connecting the flexible substrate and the insulating substrate, soldering, conductive rubber, conductive adhesive, or the like may be used. In this way, the three-phase inverter circuit shown in FIG. 2 is configured. As shown in FIG. 2, the power module of the present invention does not include the P-side wiring 83 and the N-side wiring 84 in the circuit. Therefore, in order to complete the three-phase inverter circuit, the P-side wiring 83, N in the circuit diagram is used by using a resin-based, ceramic-based or metal-based wiring board separately from the insulating substrate on which the semiconductor chip is mounted. A wiring corresponding to the side wiring 84 must be produced. Here, in addition to the wiring board, a metal body such as a bus bar may be used as it is. However, in consideration of installation in the entire apparatus, the wiring board is better in handling.

次に、第一の実施例に示した本発明のパワーモジュールを用いたモータドライブ装置について、図３を用いて説明する。ここでも、３相インバータ回路を例に説明する。前述したように、第一の実施例に示した本発明のパワーモジュールは、３相インバータ回路におけるＰ側配線及びＮ側配線を有していないため、それを付加するのに、新たに配線板が必要となる。新たに付加する配線板は、図３に示したように構成することで、設置場所を選ばないパワーモジュールを得ることができる。例えば、図３（ａ）に示したように可動部を有する全体装置において、可動部で本発明のパワーモジュールの構成要素であるフレキシブル基板が屈曲するように、フレキシブル基板の長さをあらかじめ設計しておけば、図３では図示していないが可動部に設置されているモータ近傍にパワーモジュールを設置することができ、全体装置における無駄なスペースを排除できる。また、別の例では、図３（ｂ）に示したように、配線板の端部に、パワーモジュールを設置することでも、小形なパワーモジュールを構成することができる。ここで用いる配線板は、樹脂系のプリント配線板や、セラミック系の絶縁基板もしくは金属基板を用いて良い。なお、説明は省略したが、フレキシブル基板を屈曲させないで使用することにおいても、なんら問題はない。 Next, a motor drive device using the power module of the present invention shown in the first embodiment will be described with reference to FIG. Here, a three-phase inverter circuit will be described as an example. As described above, since the power module of the present invention shown in the first embodiment does not have the P-side wiring and the N-side wiring in the three-phase inverter circuit, a new wiring board is added to add them. Is required. The newly added wiring board is configured as shown in FIG. 3, so that a power module can be obtained regardless of the installation location. For example, in the overall apparatus having a movable part as shown in FIG. 3A, the length of the flexible board is designed in advance so that the flexible board as a component of the power module of the present invention is bent at the movable part. In this case, although not shown in FIG. 3, the power module can be installed in the vicinity of the motor installed in the movable portion, and a useless space in the entire apparatus can be eliminated. In another example, as shown in FIG. 3B, a small power module can be configured by installing a power module at the end of the wiring board. The wiring board used here may be a resin-based printed wiring board, a ceramic-based insulating substrate, or a metal substrate. Although explanation is omitted, there is no problem even when the flexible substrate is used without being bent.

本発明のパワーモジュールと外部との信号および電力のやり取りは、図３では図示していないが、端子を用いて、配線板２４を介して行う。これらに、パワーモジュールに指令を与える制御装置を付加することで、設置場所を選ばないモータドライブ装置を構成できる。制御装置の配置は、ケーブルを用いることでパワーモジュールとは離れた場所に設置しても良いし、制御回路規模が小さければ、パワーモジュールと一体化することも可能である。 The exchange of signals and power between the power module of the present invention and the outside is not shown in FIG. 3, but is performed via the wiring board 24 using terminals. By adding a control device for giving a command to the power module to these, a motor drive device can be configured regardless of the installation location. The arrangement of the control device may be installed at a location away from the power module by using a cable, and can be integrated with the power module if the control circuit scale is small.

次に、本発明の第二の実施例について図４を用いて説明する。本発明が第一の実施例と異なる点は、複数の半導体チップを実装した複数の絶縁基板が、絶縁樹脂にて覆われることである。この場合、本発明のパワーモジュールがＰ側配線およびＮ側配線と接続するため、図４に示したように、フリップチップ実装した半導体チップでは、チップの回路面とは反対の面が、フェイスアップ実装した半導体チップでは、半導体チップ上に形成されたはんだが、それぞれ絶縁樹脂から凸になる必要がある。これにより、本発明のパワーモジュールの絶縁耐圧を向上できる。
ここでは、説明を省略するが、第二の実施例で示したパワーモジュールも、図３に示したようにモータドライブ装置として使用することになんら問題はない。 Next, a second embodiment of the present invention will be described with reference to FIG. The present invention is different from the first embodiment in that a plurality of insulating substrates on which a plurality of semiconductor chips are mounted are covered with an insulating resin. In this case, since the power module of the present invention is connected to the P-side wiring and the N-side wiring, in the flip-chip mounted semiconductor chip, the surface opposite to the circuit surface of the chip is face-up as shown in FIG. In the mounted semiconductor chip, the solder formed on the semiconductor chip needs to protrude from the insulating resin. Thereby, the withstand voltage of the power module of the present invention can be improved.
Although the description is omitted here, there is no problem in using the power module shown in the second embodiment as a motor drive device as shown in FIG.

本発明の第一の実施例を示すパワーモジュールの断面模式図と上面図The cross-sectional schematic diagram and top view of the power module which show the 1st Example of this invention 本発明の第一の実施例を示す回路図Circuit diagram showing a first embodiment of the present invention 本発明のパワーモジュールを用いた第一の実施例を示すモータドライブ装置の電力変換部の断面模式図Sectional schematic diagram of the power converter of the motor drive device showing the first embodiment using the power module of the present invention 本発明の第二の実施例を示すパワーモジュールの断面模式図Cross-sectional schematic diagram of a power module showing a second embodiment of the present invention 従来のパワーモジュールの一般的構造General structure of conventional power modules 従来のフレキシブル基板を用いたパワーモジュールの上面図Top view of a conventional power module using a flexible substrate 従来のフレキシブル基板を用いたパワーモジュールの斜視図A perspective view of a power module using a conventional flexible substrate

符号の説明Explanation of symbols

１ パワーモジュール
２ 正極側モジュール
３ 負極側モジュール
４ フレキシブル基板
１０ 半導体チップ
１１ 上アーム半導体チップ（正極側半導体チップ）
１２ 下アーム半導体チップ（負極側半導体チップ）
２０ 絶縁基板
２１ 配線
２２ はんだ
２３ 金属基板
２４ 配線板
２５ 絶縁樹脂
３０ Ａｌワイヤ
４０ フレキシブル基板
４１ リード部
５０ 電力回路基板
６０ ケース
６１ 端子
７０ 制御回路基板
７１ 制御チップ
８０ パワーモジュールの回路
８１ ８０の上アーム回路
８２ ８０の下アーム回路
８３ Ｐ側配線
８４ Ｎ側配線
９０ パワーモジュールを取り付ける対象 1 Power Module 2 Positive Side Module 3 Negative Side Module 4 Flexible Substrate 10 Semiconductor Chip 11 Upper Arm Semiconductor Chip (Positive Side Semiconductor Chip)
12 Lower arm semiconductor chip (negative-side semiconductor chip)
20 Insulating board 21 Wiring 22 Solder 23 Metal board 24 Wiring board 25 Insulating resin 30 Al wire 40 Flexible board 41 Lead part 50 Power circuit board 60 Case 61 Terminal 70 Control circuit board 71 Control chip 80 Power module circuit 81 80 Upper arm Lower arm circuit 83 of circuit 82 80 P side wiring 84 N side wiring 90 Object to which power module is attached

Claims (10)

自然数ｎのｎ相インバータを構成するパワーモジュールにおいて、
正極電源端子と、ｎ相正極出力端子と、前記正極電源端子と前記ｎ相正極出力端子間に接続されたｎ個の正極側半導体チップと、前記正極側半導体チップのゲートに接続した正極ゲート端子と、接続用正極側配線板と、前記接続用正極側配線板を貼り付けた正極側絶縁基板と、を備えた正極側モジュールと、
負極電源端子と、ｎ相負極出力端子と、前記負極電源端子と前記ｎ相負極出力端子間に接続されたｎ個の負極側半導体チップと、前記負極側半導体チップのゲートに接続した負極ゲート端子と、接続用負極側配線板と、前記接続用負極側配線板を貼り付けた負極側絶縁基板と、を備えた負極側モジュールと、
前記ｎ相正極出力端子と前記ｎ相負極端子を接続するフレキシブル基板と、
を備えることを特徴とするパワーモジュール。 In a power module constituting an n-phase inverter of natural number n,
A positive power supply terminal, an n-phase positive output terminal, n positive semiconductor chips connected between the positive power supply terminal and the n-phase positive output terminal, and a positive gate terminal connected to a gate of the positive semiconductor chip A positive-side module comprising: a connecting positive-side wiring board; and a positive-side insulating substrate to which the connecting positive-side wiring board is attached;
A negative power supply terminal, an n-phase negative output terminal, n negative semiconductor chips connected between the negative power supply terminal and the n-phase negative output terminal, and a negative gate terminal connected to the gate of the negative semiconductor chip A negative electrode module comprising: a negative electrode wiring board for connection; and a negative electrode insulating substrate on which the negative electrode wiring board for connection is attached;
A flexible substrate connecting the n-phase positive electrode output terminal and the n-phase negative electrode terminal;
A power module comprising: 前記接続用正極側配線板と前記接続用負極側配線板は１以上１０以下のいずれかの配線板数で構成されるとを特徴とする請求項１記載のパワーモジュール。   2. The power module according to claim 1, wherein the connecting positive electrode side wiring board and the connecting negative electrode side wiring board are configured with any number of wiring boards of 1 to 10. 前記ｎは１であることを特徴とする請求項１記載のパワーモジュール。   The power module according to claim 1, wherein n is 1. 前記ｎは２であることを特徴とする請求項１記載のパワーモジュール。     The power module according to claim 1, wherein n is two. 前記ｎは３であることを特徴とする請求項１記載のパワーモジュール。   The power module according to claim 1, wherein n is three. 前記正極側半導体チップおよび負極側半導体チップをフェイスアップ実装及びフェイスダウン実装の２つを用いて実装したことを特徴とする請求項1記載のパワーモジュール。   2. The power module according to claim 1, wherein the positive-side semiconductor chip and the negative-side semiconductor chip are mounted using two of face-up mounting and face-down mounting. 前記正極側配線板および前記負極側配線板は樹脂系であることを特徴とする請求項１記載のパワーモジュール。   The power module according to claim 1, wherein the positive electrode side wiring board and the negative electrode side wiring board are resin-based. 前記正極側配線板および前記負極側配線板はセラミック系であることを特徴とする請求項１記載のパワーモジュール。   The power module according to claim 1, wherein the positive-side wiring board and the negative-side wiring board are ceramic. 前記正極側絶縁基板と前記負極側絶縁基板は、樹脂で覆われていることを特徴とする請求項１記載のパワーモジュール。   The power module according to claim 1, wherein the positive electrode side insulating substrate and the negative electrode side insulating substrate are covered with a resin. 請求項１〜９のいずれかに記載されたパワーモジュールを搭載することを特徴とするモータドライブ装置。   A motor drive device comprising the power module according to claim 1.
JP2007300656A 2007-11-20 2007-11-20 Power module and motor drive device using the same Abandoned JP2009129974A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151056A (en) * 2010-01-19 2011-08-04 Yaskawa Electric Corp Semiconductor device, and method of manufacturing semiconductor device
WO2013153920A1 (en) * 2012-04-11 2013-10-17 住友電気工業株式会社 Semiconductor device
WO2015182301A1 (en) * 2014-05-28 2015-12-03 三菱電機株式会社 Power conversion device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151056A (en) * 2010-01-19 2011-08-04 Yaskawa Electric Corp Semiconductor device, and method of manufacturing semiconductor device
WO2013153920A1 (en) * 2012-04-11 2013-10-17 住友電気工業株式会社 Semiconductor device
WO2015182301A1 (en) * 2014-05-28 2015-12-03 三菱電機株式会社 Power conversion device
JPWO2015182301A1 (en) * 2014-05-28 2017-04-20 三菱電機株式会社 Power converter
US10063123B2 (en) 2014-05-28 2018-08-28 Mitsubishi Electric Corporation Electric power converting apparatus

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