JP2009114490A - Substrate holder and film-forming apparatus provided with the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate holder which can fit a substrate to be treated therein without a lift when fitting the substrate to be treated to a substrate-supporting tool of the substrate holder and thereby causes no crack and chip on an outer circumferential edge of the substrate to be treated, and to provide a film-forming apparatus provided with the substrate holder. <P>SOLUTION: The substrate holder 21 includes: an inner flange 22c which projects inward at a lower end of a cylinder 22a; and the substrate-supporting tool 22 for supporting the outer circumferential edge of a semiconductor substrate 4 which has been fitted in the cylinder 22a, with the inner flange 22c. The inner flange 22c has a clearance groove 23 formed therein for the outer circumferential edge of the semiconductor substrate 4. A vapor-deposition apparatus 20 is provided with the substrate holder 21. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate holder that holds a semiconductor substrate or the like as a substrate to be processed, and a film forming apparatus including the substrate holder.

  An example of a conventional film forming apparatus and a substrate holder will be described with reference to FIGS.

  4 is a cross-sectional view showing a schematic configuration of a vapor deposition apparatus as a film forming apparatus, and FIG. 5A is an enlarged view of a main part in a state where a semiconductor substrate as a substrate to be processed is held on a substrate holder. (B) is a partial cross-sectional perspective view of a substrate receiving jig.

  4 and 5, 10 is a conventional deposition apparatus, 1 is a chamber, 1a is an exhaust system, 2 is a deposition source, 3 is a planetarium, 3a is a deposition window, 4 is a semiconductor substrate, 5 is a substrate receiving jig, and 5a is Cylindrical body, 5b is an outer flange, 5c is an inner flange, 7 is a spring portion, 8 is a cover, 9 is a substrate holder, B is an electron beam, and M is a vapor deposition material.

  As shown in FIG. 4, a conventional vapor deposition apparatus 10 includes a vapor deposition source 2 disposed below the interior of the chamber 1 and a planetarium 3 disposed above the interior. The interior of the chamber 1 is exhausted from an exhaust system 1a. It will be in a vacuum state.

  The vapor deposition source 2 includes a crucible 2b provided on the upper surface of the base 2a and an electron gun 2c provided on the side of the base 2a.

  The vapor deposition material M such as aluminum is put in the crucible 2b and heated by the electron beam B from the electron gun 2c, so that the vapor deposition material M is diffused upward as a vapor.

  The planetarium 3 has a spherical concave portion, and three (only two in the drawing) are arranged at equal intervals in the chamber 1. The planetarium support mechanism 6 causes the focal direction of the concave portion to face the vapor deposition source 2. So that it is supported.

  The planetarium support mechanism 6 includes a revolving drive unit 6a provided at the upper center of the chamber 1, a revolving shaft 6b rotated by the revolving drive unit 6a, and a support arm 6c projecting in three directions at equal angular intervals from the lower end thereof. And a bicycle ring part 6d provided on the support arm 6c, and a track part 6e on which the bicycle ring part 6d rolls.

  Each of the three planetariums 3 has a central portion on the back surface, which is a spherical convex portion, fixed to the rotation shaft of the bicycle ring portion 6d.

  The planetarium 3 configured as described above revolves while rotating with the concave portion directed to the vapor deposition source 2, and receives the vapor deposition material M from the vapor deposition source 2 uniformly.

  The planetarium 3 is provided with a large number of vapor deposition windows 3a. A substrate holder 9 holding the semiconductor substrate 4 is fitted into each of these from the back surface (upper side).

  As shown in FIG. 5, the substrate holder 9 includes a substrate receiving jig 5 and a cover 8, and the semiconductor substrate 4 is sandwiched therebetween and held by pressing the spring portion 7.

  More specifically, the substrate receiving jig 5 is a ring-shaped metal plate (for example, an outer flange 5b projecting outward at the upper end of a very short cylinder 5a and an inner flange 5c projecting inward at the lower end (for example, The material of the cylinder 5a is slightly larger than the outer diameter of the semiconductor substrate 4, and the semiconductor substrate 4 is fitted into the cylinder 5a and the outer periphery thereof is supported by the inner flange 5c. ing.

The cylindrical body 5a is fitted into the deposition window 3a of the planetarium 3, and is held by the planetarium 3 with its outer flange 5b. (For example, patent document 1).
Japanese Utility Model Publication No. 4-18655

  However, in the conventional substrate holder 9 and vapor deposition apparatus 10 as described above, as shown in FIG. 6, when the semiconductor substrate 4 is fitted into the substrate receiving jig 5, the outer peripheral edge of the semiconductor substrate 4 is the substrate receiving jig. 5 may be in a slightly floating state (indicated by a floating S in the figure) without firmly contacting the entire inner flange 5c.

  The reason for the occurrence of the float S is that the outer peripheral edge of the semiconductor substrate 4 rides on the rounded portion R of the bottom corner generated when the substrate receiving jig 5 is manufactured by press processing (drawing processing) with high productivity and economy. Met.

  Further, when the semiconductor substrate 4 is polished to reduce the thickness thereof, the chamfered portion provided on the outer peripheral edge of the semiconductor substrate 4 is reduced to become a knife edge, and is easily caught by the rounded portion R of the substrate receiving jig 5. There was also a factor.

  In the state where the float S is generated as described above, when the cover 8 is pressed or stress of rotation or revolution of the planetarium 3 is applied, the edge of the semiconductor substrate 4 is cracked or chipped. It was.

  It is an object of the present invention to insert a substrate to be processed without floating when the substrate to be processed is inserted into a substrate receiving jig of the substrate holder, and as a result, a substrate holder that does not crack or chip in the outer peripheral edge of the substrate to be processed. And a film forming apparatus including the same.

The substrate holder of the present invention is
In a substrate holder having a substrate receiving jig having an inner flange projecting inwardly at the lower end of the cylinder and supporting the outer peripheral edge of the substrate to be processed fitted into the cylinder with the inner flange, the inner flange A substrate holder characterized in that a relief groove is provided for an outer peripheral edge of a processing substrate.

  In addition, the film forming apparatus of the present invention includes a substrate receiving jig that has an inner flange projecting inwardly at the lower end of the cylindrical body, and supports the outer peripheral edge of the substrate to be processed fitted in the cylindrical body with the inner flange. The substrate holder is provided with a substrate holder in which an inner flange is provided with a relief groove with respect to the outer peripheral edge of the substrate to be processed.

  According to the substrate holder and the film forming apparatus provided with the substrate holder of the present invention, when the substrate to be processed is fitted into the substrate receiving jig of the substrate holder, the substrate to be processed is fitted without being floated. No cracking or chipping at the outer periphery.

  An example of the film forming apparatus and the substrate holder of the present invention will be described with reference to FIGS.

  FIG. 1 is a cross-sectional view showing a schematic configuration of a vapor deposition apparatus as a film forming apparatus of the present invention, and FIG. FIG. 2B is a partial cross-sectional perspective view of the substrate receiving jig. 4 and 5 are denoted by the same reference numerals.

  In FIGS. 1 and 2, 20 is a vapor deposition apparatus of the present invention, 1 is a chamber, 1a is an exhaust system, 2 is a vapor deposition source, 3 is a planetarium, 3a is a vapor deposition window, 4 is a semiconductor substrate, 7 is a spring portion, and 8 is a cover. , 21 is a substrate holder, 22 is a substrate receiving jig, 22a is a cylinder, 22b is an outer flange, 22c is an inner flange, B is an electron beam, and M is a vapor deposition material.

  As shown in FIG. 1, the vapor deposition apparatus 20 of the present invention is different from the configuration of the conventional vapor deposition apparatus 10 (FIG. 4) in that the substrate holder provided therein is different.

Therefore, the description of the same components is omitted, and the configuration of the substrate holder will be described in detail below with reference to FIG.

  As shown in FIG. 2, the substrate holder 21 includes a substrate receiving jig 22 and a cover 8, and the semiconductor substrate 4 is sandwiched between them and held by pressing of the spring portion 7.

  Specifically, the substrate receiving jig 22 is a ring-shaped metal plate (for example, an outer flange 22b projecting outward at the upper end of a very short cylinder 22a and an inner flange 22c projecting inward at the lower end (for example, The material of the cylinder 22a is slightly larger than the outer diameter of the semiconductor substrate 4, and the semiconductor substrate 4 is fitted into the cylinder 22a and the outer peripheral edge thereof is supported by the inner flange 22c. ing.

  The cylindrical body 22a is fitted into the vapor deposition window 3a of the planetarium 3, and is held by the planetarium 3 with its outer flange 22b.

  Here, the inner flange 22c is provided with a clearance groove 23 with respect to the outer peripheral edge of the semiconductor substrate 4, and when the semiconductor substrate 4 is fitted into the substrate receiving jig 22, the outer peripheral edge of the semiconductor substrate 4 and the inner flange 22c. There is no floating between them.

  The escape groove 23 is formed over the entire circumference of the inner flange 22c, and the outer surface of the escape groove 23 is formed so as to form a continuous surface with the inner wall surface of the cylindrical body 22a.

  Moreover, the cross-sectional shape of the escape groove 23 is U-shaped.

  The groove width of the escape groove 23 is in the range of 2 to 3 times the difference between the inner diameter of the cylindrical body 22 a and the outer diameter of the semiconductor substrate 4.

  Thereby, even if the semiconductor substrate 4 is displaced to the maximum in the cylindrical body 22a, the outer peripheral edge of the semiconductor substrate 4 is not caught on the inner peripheral edge of the escape groove 23, which is preferable.

  The groove depth of the escape groove 23 is in the range of 1/5 to 1/2 of the thickness dimension of the inner flange 22c.

  Thereby, there is little processing distortion and strength reduction at the time of manufacturing the substrate receiving jig 22 by press working, which is preferable.

  In the substrate holder 21 and the vapor deposition apparatus 20 including the substrate holder 21, when the semiconductor substrate 4 is fitted into the substrate receiving jig 22, the semiconductor substrate 4 is fitted without floating, and as a result, the semiconductor substrate 4 is fitted to the outer peripheral edge of the semiconductor substrate 4. No cracking or chipping.

  In the above description, the sectional shape of the relief groove 23 has been described as an example of a U shape. However, the shape is not particularly limited to this, and may be a V shape as shown in FIG.

  If the cross-sectional shape of the relief groove 23 is V-shaped, the amount of meat to be removed when the relief groove 23 is formed can be reduced compared to the U-shape, and processing distortion and strength reduction may be further reduced. .

  Furthermore, as shown in FIG. 3B, when the cylindrical body 22a is tapered so as to expand upward from the inner flange 22c, the work of inserting and removing the semiconductor substrate 4 from and into the substrate receiving jig 22 is performed. It can be done smoothly and has good workability.

  Here, when the angle θ formed by the inner wall surface of the cylindrical body 22a and the inner wall surface of the inner flange 22c is in the range of 90 ° to 100 °, the holding stability of the semiconductor substrate 4 in the substrate receiving jig 22 is also improved. Good and workability is also good.

  In the above description, the vapor deposition apparatus has been described as an example of the film formation apparatus. However, the present invention is not limited to this, and any apparatus can be used as long as the film processing is performed by holding the substrate to be processed on the substrate holder provided with the substrate receiving jig. Applicable to anything.

  The present invention provides a substrate holder in which a substrate to be processed is fitted without floating when the substrate to be processed is fitted into a substrate receiving jig of the substrate holder, and as a result, a substrate holder that does not crack or chip in the outer peripheral edge of the substrate to be processed, and It can apply to the film-forming apparatus provided with.

Sectional drawing which shows schematic structure of the vapor deposition apparatus as a film-forming apparatus of this invention The principal part enlarged view of the state which hold | maintained the semiconductor substrate as a to-be-processed substrate to the substrate holder of this invention, and the partial cross-section perspective view of a substrate receiving jig The partial cross-sectional perspective view of the other example of the board | substrate receiving jig of the board | substrate holder of this invention Sectional drawing which shows schematic structure of the vapor deposition apparatus as a conventional film-forming apparatus An enlarged view of a main part in a state where a semiconductor substrate as a substrate to be processed is held on a conventional substrate holder, and a partial sectional perspective view of a substrate receiving jig Sectional drawing explaining the subject of the conventional substrate holder and vapor deposition apparatus

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Chamber 1a Exhaust system 2 Deposition source 2a Base 2b Crucible 2c Electron gun 3 Planetarium 3a Deposition window 4 Semiconductor substrate 5, 22 Substrate receiving jig 5a, 22a Cylindrical body 5b, 22b Outer flange 5c, 22c Inner flange 6 Planetarium support mechanism 6a Revolving drive part 6b Revolving shaft 6c Support arm 6d Bicycle ring part 6e Track part 7 Spring part 8 Cover 9, 21 Substrate holder 10 Conventional vapor deposition apparatus 20 Deposition apparatus 23 Escape groove B Electron beam M Deposition substance R Round part S Float θ Angle formed by the inner wall surface of the cylindrical body 22a and the inner wall surface of the inner flange 22c

Claims (12)

In a substrate holder having an inner flange projecting inwardly at the lower end of the cylinder, and having a substrate receiving jig for supporting the outer peripheral edge of the substrate to be processed fitted in the cylinder by the inner flange,
A substrate holder, wherein a relief groove for an outer peripheral edge of the substrate to be processed is provided in the inner flange.   The substrate holder according to claim 1, wherein the escape groove is formed over the entire circumference of the inner flange.   The substrate holder according to claim 1, wherein an outer surface of the escape groove forms a continuous surface with an inner wall surface of the cylindrical body.   The substrate holder according to claim 1, wherein a cross-sectional shape of the escape groove is U-shaped or V-shaped.   The groove width of the escape groove is in a range of 2 to 3 times the difference between the inner diameter of the cylindrical body and the outer diameter of the substrate to be processed. Substrate holder.   The substrate holder according to claim 1, wherein a groove depth of the escape groove is in a range of 1/5 to 1/2 of a thickness dimension of the inner flange.   The substrate holder according to claim 1, wherein the cylindrical body has a tapered shape extending upward from the inner flange.   The substrate holder according to claim 7, wherein an angle formed by an inner wall surface of the cylindrical body and an inner wall surface of the inner flange is in a range of 90 ° to 100 °.   The substrate holder according to claim 1, wherein the substrate receiving jig has an outer flange that projects outwardly from an upper end of the cylindrical body.   The substrate holder according to claim 1, further comprising a cover that presses the substrate to be processed against the inner flange from above the substrate to be processed fitted into the cylindrical body.   A film forming apparatus comprising the substrate holder according to claim 1.   The film deposition apparatus according to claim 11, wherein the film deposition apparatus is a vapor deposition apparatus that attaches the substrate holder to a planetarium and performs a vapor deposition process on a substrate to be processed.

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