JP2001203191A - Component for semiconductor manufacturing machine and the machine - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a component for a semiconductor manufacturing machine together with a semiconductor manufacturing machine using it, excellent in durability than before when irradiated with a plasma. SOLUTION: A component 1 which is used for a semiconductor manufacturing machine that uses a plasma comprises a base material 11 which comprises a carbon material and corner parts 15 depressed inward, and a coat 12 of silicon carbide formed on the surface of base material 11 including the corner parts 15 by a CVD method. The corner part 15 of the base material 11 is beveled or rounded (150).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a component used in a semiconductor manufacturing apparatus using plasma.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, a semiconductor manufacturing apparatus using plasma is used. For example, the plasma etching apparatus performs a process of exposing the silicon surface by exposing only the photosensitive region in the photosensitive film by exposing the silicon wafer having undergone the exposure and development processes to gas plasma. The plasma etching apparatus includes a pair of upper and lower electrodes 52 and 53 disposed in a chamber 51, as shown in FIG. 4 described later, and gas plasma is supplied from the upper electrode 52 to the lower electrode 53. It is configured as follows. Then, the silicon wafer 8 as a material to be processed is placed on the upper surface of the lower electrode 53, and irradiation with gas plasma is performed, whereby the above-described silicon surface exposure processing can be performed.

It is necessary to arrange a dummy ring around the outer peripheral portion of the silicon wafer 8. The dummy ring is used to uniformly irradiate the gas plasma also on the outer peripheral portion of the silicon wafer, thereby suppressing in-plane variation in the amount of abrasion of the silicon wafer due to the plasma and performing uniform etching.

[0004]

By the way, components for semiconductor manufacturing equipment, such as a conventional dummy ring, are gradually degraded by being irradiated with plasma during plasma processing. Specifically, the portion irradiated with the plasma is separated into, for example, powder and scatters or gasifies, and is gradually consumed. In addition, the reaction products and the scattered particles may adhere to the silicon wafer as particles, which may cause the particles to be defective.

In view of the above, conventionally, there has been proposed a material using a high-purity silicon carbide sintered body or a material in which a carbon material as a base material is coated with a film of a high purity silicon carbide sintered body having a thickness of several tens μm. Have been. However, although high-purity silicon carbide sintered bodies generate fewer particles than aluminum and carbon materials are used, crystal particles on the surface layer fall off due to gas plasma irradiation when used for a long time. And that causes the generation of particles.

Further, as shown in FIG. 8, even when the above-mentioned component for a semiconductor manufacturing apparatus comprises a base material 91 and a film 92 coated on its surface, it has a concave corner 95 like a dummy ring 9. In this case, the corners 95 may be consumed more than other flat parts, and the excessively consumed parts 99 may be generated. This is considered to be because plasma tends to concentrate on the corner 95. for that reason,
There has been a demand for the development of parts for semiconductor manufacturing equipment having excellent wear resistance as a whole, including the corners.

The present invention has been made in view of such conventional problems, and provides a component for a semiconductor manufacturing apparatus which is more durable when subjected to plasma irradiation than before and a semiconductor manufacturing apparatus using the same. What you want to do.

[0008]

According to a first aspect of the present invention, there is provided a component for a semiconductor manufacturing apparatus used in a semiconductor manufacturing apparatus utilizing plasma, wherein the component for a semiconductor manufacturing apparatus is formed of a carbon material and has a concave corner inward. And a coating made of silicon carbide formed on the surface of the substrate including the corners by a CVD method, including the corners, and the corners of the substrate are chamfered or rounded. A part for a semiconductor manufacturing apparatus characterized by being formed.

What is most notable in the present invention is that the corners of the base material are chamfered or rounded, and that the film is made of silicon carbide formed by the CVD method.

The above-mentioned carbon material is a material using carbon such as graphite, and is particularly preferably an isotropic graphite material or a C / C composite. Then, chamfering or rounding is formed at the corners of the base material as described above. Here, the chamfer or roundness is, for example, JIS-B0
As indicated by reference numeral 701, this means that the angle of the corner is reduced. That is, the chamfer is commonly called C
It is called a surface, and refers to a shape in which two corners of obtuse angle are arranged side by side by building up a corner at a substantially right angle. In addition, roundness is what is commonly called R, and means that a corner is formed in an arc shape and has no corner.

The above-mentioned film uses silicon carbide formed by the CVD method as described above. This film can be obtained by forming a film directly on the surface of the base material by the CVD method. Further, the coating may be provided on the entire surface of the base material, or may be provided partially on a portion irradiated with plasma.

Next, the operation of the present invention will be described. The component for a semiconductor manufacturing apparatus of the present invention comprises the above-described base material and a film provided on the surface thereof. Therefore, the durability of the component for semiconductor manufacturing equipment depends on the durability of the film.
Here, in the present invention, silicon carbide (hereinafter, referred to as CVD-SiC) formed by a CVD method is used as the film. This CVD-SiC can be SiC which is superior in high purity and denseness as compared with a conventionally used high-purity silicon carbide sintered body. For this reason, the film made of CVD-SiC can suppress the falling of the crystal grains when the plasma is irradiated, as compared with the conventional case.
The generation of particles can be reduced as compared with the related art.

In the corner, the substrate is chamfered or rounded. Therefore, the thickness of the film formed on the corner can be easily increased as compared with the case where these are not provided. That is, when the corner is substantially right angle, the above C
In some cases, the reactive gas supplied in the VD method hardly comes into contact with the corners, and the film thickness sometimes becomes locally thin. On the other hand, by providing the chamfer or roundness at the corner of the base material, the growth of the film at the corner can be promoted, and a film having a sufficient thickness can be obtained.

Therefore, even at the corners, the above-mentioned CVD
-Excellent effect of SiC can be obtained, and local consumption of corners can be suppressed. Therefore,
Since the deterioration due to the consumption of the entire film including the corners is suppressed more than before, the durability of the parts for semiconductor manufacturing equipment can be improved more than before.

Next, as in the second aspect of the present invention, the corner may have a chamfer with a chamfer C dimension of 0.1 mm or more or a roundness with a roundness R dimension of 0.1 mm or more. preferable. The chamfer C dimension and roundness R dimension are 0.1
If it is less than mm, there is a problem that the above-mentioned effect of promoting film formation at the corners cannot be sufficiently obtained. For this reason, it is more preferable that each of them is 0.3 mm or more.

As shown in FIG. 6, the dimension of the chamfer C means the distance between the intersection A where the two wall surfaces 151 and 152 constituting the corner 15 are extended and the intersection B between the chamfered surface 153. The roundness R dimension is, as shown in FIG.
It refers to the radius of curvature R of the curved surface connecting 51 and 152. In any case, the angle between the wall surfaces 151 and 152 may be other than 90 °.

According to a third aspect of the present invention, the component for a semiconductor manufacturing apparatus may be a dummy ring arranged on an outer periphery of a silicon wafer in the semiconductor manufacturing apparatus. In this case, a highly durable dummy ring can be obtained, and by using this, a high-quality silicon wafer can be manufactured.

According to a fourth aspect of the present invention, there is provided a semiconductor manufacturing apparatus using the component for a semiconductor manufacturing apparatus according to any one of the first to third aspects. Since the semiconductor manufacturing apparatus of the present invention uses the above-described excellent parts for a semiconductor manufacturing apparatus, a high-quality silicon wafer can be stably manufactured for a long period of time.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 A component for a semiconductor manufacturing apparatus according to an embodiment of the present invention will be described with reference to FIGS. In this example, as shown in FIG. 4, in the semiconductor manufacturing process, the silicon wafer 8 that has been exposed and developed is exposed to gas plasma to selectively remove only the photosensitive region in the photosensitive film to expose the silicon surface. 1 shows an example of a dummy ring 1 which is a component for a semiconductor manufacturing apparatus used in a plasma etching apparatus 5 for performing a process to be performed.

As shown in FIGS. 1 to 3, the dummy ring 1 of this embodiment is composed of a base material 11 made of a carbon material and having an inwardly recessed corner portion 15 and a base material 11 including the corner portion 15.
And a film 12 of silicon carbide formed by a CVD method on the surface of the substrate. And, in the corner 15 of the base material 11,
A roundness 150 is formed. The overall shape of the dummy ring 1 has a ring shape and has a concave portion 19 for mounting the silicon wafer 8 on the upper surface of the inner peripheral portion thereof.

In manufacturing the dummy ring 1, first, an isotropic graphite material (trade name: T-4, manufactured by IBIDEN Co., Ltd.) is supplied with an outer diameter of 250 mm and an inner diameter of 190 mm.
Lathe processing was performed to a thickness of 3 mm, and then high-purification treatment was performed in a halogen gas atmosphere at 2000 ° C. to produce a substrate 11 made of graphite. Also, the roundness 1 of the concave portion 19 and the corner 15
50 was formed by cutting. In this example, the dimension of the roundness R was 0.3 mm.

Next, the surface of the substrate 11 is coated with CVD-SiC
Is directly formed. Specifically, the substrate 11 was set in a CVD apparatus (not shown),
Under conditions of 50 ° C. and a degree of vacuum of 150 Torr, methyl chlorosilane was supplied as a reaction gas and hydrogen was supplied as a carrier gas, and the film 12 was formed by thermal decomposition. As a result, a film 12 having an average thickness of 200 μm was formed on the surface of the substrate 11. In addition, as shown in FIG.
In the film 12 in the above, the central portion was grown to be slightly thicker than the peripheral wall portion.

Next, a plasma etching apparatus 5 using the dummy ring 1 will be briefly described with reference to FIG. As shown in the figure, the plasma etching apparatus 5 of the present embodiment includes a pair of upper and lower electrodes 52 and 53 disposed in a cylindrical chamber 51, and performs gas plasma from the upper electrode 52 to the lower electrode 53. Is provided. An exhaust port 514 for evacuating the inside is provided on the side surface of the chamber 51.

The upper electrode 52 is made of a conductive material such as SiC, silicon, aluminum, or carbon, and has a large number of through holes 521 for guiding a gas supplied from above between the electrodes. Also, the upper electrode 52
Support ring 512 projecting inward from chamber 51
Are arranged to be engaged.

The lower electrode 53 is disposed above the stage 54. The lower electrode 53 is provided with a convex portion 531 at the center and a concave portion 532 for disposing the dummy ring 1 around the convex portion 531. The dummy ring 1 is set and used in the depression 532 so as to surround the projection 531. The silicon wafer 8 is placed in the concave portion 19 of the dummy ring 1 as shown in FIGS.

Next, the silicon wafer 8 was actually processed using the plasma etching apparatus 5, and the durability of the dummy ring 1 and the quality of the obtained silicon wafer 8 were evaluated. As a result, when plasma etching was performed under the same conditions as in the prior art, the consumption of the dummy ring 1 progressed slowly, showing excellent durability, and the quality of the obtained silicon wafer 8 was excellent without particles and the like. It was. In particular, almost no local wear was observed even at the corners 15, and excellent durability was obtained.

Embodiment 2 This embodiment is an example in which the shape of the corner 15 in Embodiment 1 is changed to a roundness 150 and a chamfered surface 153 is provided. In this example, the chamfer C dimension was 0.3 mm. Others are the same as the first embodiment. In this embodiment, the same operation and effect as those of the first embodiment can be obtained.

[0028]

As described above, according to the present invention, it is possible to provide a component for a semiconductor manufacturing apparatus which is more durable when subjected to plasma irradiation than before and a semiconductor manufacturing apparatus using the same.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a semiconductor manufacturing device component (dummy ring) according to a first embodiment.

FIG. 2 is a perspective view of a semiconductor manufacturing device component (dummy ring) and a silicon wafer in the first embodiment.

FIG. 3 is an explanatory view showing a cross-sectional shape of a corner of a component for a semiconductor manufacturing apparatus in the first embodiment.

FIG. 4 is an explanatory diagram illustrating a configuration of a plasma etching apparatus according to the first embodiment.

FIG. 5 is an explanatory diagram showing a cross-sectional shape of a corner of a component for a semiconductor manufacturing apparatus in a second embodiment.

FIG. 6 is an explanatory diagram showing a chamfer C dimension of a corner.

FIG. 7 is an explanatory view showing the roundness R dimension of a corner.

FIG. 8 is an explanatory view showing a cross-sectional shape of a corner of a component for a semiconductor manufacturing apparatus in a conventional example.

[Explanation of symbols]

 1. . . 10. parts for semiconductor manufacturing equipment (dummy ring); . . Base material, 12. . . Coating, 15. . . Corner, 150. . . Roundness, 151, 152. . . Wall surface, 153. . . Chamfered surface, 5. . . 7. plasma etching equipment, . . Silicon wafer,

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Keiichi Sakashita 300 Aoyanagicho, Ogaki-shi, Gifu FBI term in Aoyanagi Plant (reference) 5F004 AA01 BA04 BB32 DB01

Claims (4)

[Claims] 1. A component for a semiconductor manufacturing apparatus used in a semiconductor manufacturing apparatus using plasma, wherein the component for a semiconductor manufacturing apparatus includes a base material made of a carbon material and having an inwardly depressed corner. A film made of silicon carbide formed by a CVD method on the surface of the substrate including the corners, and the corners of the substrate are chamfered or rounded. For semiconductor manufacturing equipment. 2. The semiconductor manufacturing device according to claim 1, wherein the corner has a chamfer with a chamfer C dimension of 0.1 mm or more or a roundness with a roundness R dimension of 0.1 mm or more. Equipment parts. 3. The component for a semiconductor manufacturing device according to claim 1, wherein the component for a semiconductor manufacturing device is a dummy ring arranged on an outer periphery of a silicon wafer in the semiconductor manufacturing device. 4. A semiconductor manufacturing apparatus using the component for a semiconductor manufacturing apparatus according to claim 1.