JP2009111423A - Gan crystal substrate and manufacturing method therefor, and semiconductor device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a GaN crystal substrate and a manufacturing method therefor which enable the growth of a semiconductor layer with fine crystallinity on a crystal growth surface, and to provide a semiconductor device and a manufacturing method therefor. <P>SOLUTION: The GaN crystal substrate 10 has a back surface opposite to the crystal growth surface 10c. The back surface shows a warp w<SB>(R)</SB>per the length of the back surface of 5.08 cm that is calculated at -35 μm≤w<SB>(R)</SB>≤45 μm, which represents the sum of the distance from a maximum displacement of a warped surface toward one side from an optimum surface to the optimum surface and the distance from a maximum displacement of a warped surface toward the other side from the optimum surface to the optimum surface. The manufacturing method for the semiconductor device includes a step of selecting the GaN crystal substrate 10 as a substrate and growing at least one group III nitride crystal layer 20 on the crystal growth surface 10c of the GaN crystal substrate 10. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a GaN crystal substrate used for a semiconductor device such as a light emitting element, an electronic element, and a semiconductor sensor, a manufacturing method thereof, a semiconductor device including the GaN crystal substrate as a substrate, and a manufacturing method thereof.

  The GaN crystal substrate is very useful as a substrate for semiconductor devices such as light emitting elements, electronic elements, and semiconductor sensors. Such a GaN crystal substrate is obtained by cutting a GaN crystal grown by a vapor phase growth method such as HVPE (hydride vapor phase epitaxy) method or MOVPE (organic metal vapor phase epitaxy) method into a predetermined substrate shape and grinding its main surface. , Polishing and / or etching.

  A semiconductor device having high characteristics by growing at least one semiconductor layer having good crystallinity (which means the order of atomic arrangement in the crystal, the same applies hereinafter) on a crystal growth surface which is one main surface of the GaN crystal substrate. In order to achieve this, a GaN crystal substrate with a small crystal growth surface warp and surface roughness has been proposed (see, for example, Japanese Patent Laid-Open No. 2000-12900 (Patent Document 1)).

  However, if the warpage and surface roughness of the crystal growth surface of the GaN crystal substrate are small, the back surface of the GaN crystal substrate (the other main surface, ie, the surface opposite to the crystal growth surface, hereinafter the same) warps. When a semiconductor layer is formed on the crystal growth surface of the substrate, a gap formed between the back surface of the substrate and the susceptor (hereinafter referred to as a base on which the substrate is arranged) is increased, and heat transferred from the susceptor to the substrate As a result, the semiconductor layer cannot be uniformly and stably formed on the crystal growth surface of the substrate. For this reason, there is a problem that a semiconductor layer with good crystallinity cannot be formed on the crystal growth surface of the substrate, and a semiconductor device with good characteristics cannot be obtained. Further, the surface roughness of the back surface of the GaN crystal substrate is generally larger than the surface roughness of the crystal growth surface, but if it is extremely large, the same problem as described above has occurred.

Japanese Patent Laid-Open No. 2000-12900

  The present invention relates to a GaN crystal substrate having a small back surface warp capable of growing a semiconductor layer having good crystallinity on the crystal growth surface and a method for manufacturing the same, and a semiconductor device including the GaN crystal substrate and a method for manufacturing the semiconductor device. The purpose is to provide.

The present invention relates to the back surface, which is the surface opposite to the crystal growth surface, in which the warped curved surface has the largest displacement value on one side with respect to the optimum plane and the distance between the optimum plane and the largest displacement value on the other side and the optimum plane. This is a GaN crystal substrate in which the warp w _(R) per 5.08 cm length of the back surface calculated as the sum of the distances is −35 μm ≦ w _(R) ≦ 45 μm.

In the GaN crystal substrate according to the present invention, the surface roughness Ra _(R) of the back surface can be set to Ra _(R) ≦ 10 μm. Furthermore, the surface roughness Ra _(R) of the back surface can be set to Ra _(R) ≧ 1 μm. Further, the surface roughness Ry _(R) of the back surface can be set to Ry _(R) ≦ 75 μm. Furthermore, the surface roughness Ry _(R) of the back surface can be set to Ry _(R) ≧ 3 μm. Further, the warp w _(C) per length of 5.08 cm of the crystal growth surface measured using an optical interference type flat tester can be set to −50 μm ≦ w _(C) ≦ 50 μm. Further, the surface roughness Ra _(C) of the crystal growth surface can be set to Ra _(C) ≦ 10 nm. Further, the surface roughness Ry _(C) of the crystal growth surface can be set to Ry _(C) ≦ 60 nm.

  Further, the present invention is a method for manufacturing the above GaN crystal substrate, which includes a step of cutting the GaN crystal substrate from the grown GaN crystal and a step of treating the back surface of the GaN crystal substrate. The step of processing the back surface is a method of manufacturing a GaN crystal substrate including at least one of a step of grinding the back surface, a step of polishing the back surface, and a step of etching the back surface.

  The present invention is also a method for manufacturing a semiconductor device, comprising the steps of selecting the GaN crystal substrate as a substrate and growing at least one group III nitride crystal layer on the crystal growth surface side of the GaN crystal substrate.

  The present invention is also a semiconductor device comprising the GaN crystal substrate and at least one group III nitride crystal layer formed on the crystal growth surface side of the GaN crystal substrate.

  According to the present invention, it is possible to grow a semiconductor layer having good crystallinity on the crystal growth surface, a GaN crystal substrate with a small back surface warpage, and a method for manufacturing the same, and a semiconductor device including the GaN crystal substrate and the method for manufacturing the same. A method can be provided.

It is a schematic diagram which shows the curvature of the back surface of the GaN crystal substrate concerning this invention. It is a flowchart which shows the curvature measurement method of the back surface of the GaN crystal substrate concerning this invention. It is a schematic diagram which shows the measuring apparatus used for the curvature measuring method of the back surface of the GaN crystal substrate concerning this invention. It is a schematic diagram which shows the several measurement point in the curvature measuring method of the back surface of the GaN crystal substrate concerning this invention. It is a schematic diagram which shows the arrangement | sequence of several measurement points. It is a schematic diagram which shows the kernel of the Gaussian filter of 8 vicinity. Here, (a) shows the arrangement position of the Gaussian function f (x, y) for each coefficient, (b) shows the arrangement of each coefficient before normalization, σ = 5, and (c) shows σ = 5, which shows the arrangement of coefficients after normalization. It is a schematic diagram which shows the curvature calculation step in the curvature measuring method of the back surface of the GaN crystal substrate concerning this invention. It is a schematic cross section which shows the manufacturing method of the GaN crystal substrate concerning this invention. It is a schematic cross section which shows the manufacturing method of the semiconductor device concerning this invention. It is a figure which shows the relationship between the curvature of the back surface of a GaN crystal substrate, and the yield of a semiconductor device.

(Embodiment 1)
In one embodiment of the GaN crystal substrate according to the present invention, referring to FIG. 1, the warp w _(R) of the back surface 10r which is the surface opposite to the crystal growth surface 10c is −50 μm ≦ w _(R) ≦ 50 μm. is there. Here, a warp in which the back surface 10r is concave as shown in FIG. 1A is positive (indicated by a symbol +), and a warp in which the back surface 10r is convex in FIG. -). Further, warpage w _(R) is defined as the height difference between the displacement value z _V of displacement values z _P and the most recessed portion of the outermost convex portion on the rear surface 10r.

Referring to FIG. 1, when w _(R) of back surface 10 r is w _(R) <−50 μm or w _(R) > 50 μm, it is formed between GaN crystal substrate 10 and the surface of susceptor 9. The gap portion 91 becomes larger. As a result, when at least one group III nitride crystal layer 20 is grown as a semiconductor layer on the crystal growth surface 10c of the GaN crystal substrate 10, the distribution of heat transferred from the susceptor 9 to the GaN crystal substrate 10 becomes non-uniform. . For this reason, the group III nitride crystal layer 20 which is a semiconductor layer cannot be grown uniformly and stably, and it becomes difficult to manufacture a semiconductor device having uniform and high characteristics.

From such a viewpoint, the warp w _(R) of the back surface 10r is more preferably −35 μm ≦ w _(R) ≦ 45 μm. Here, as shown in FIG. 1A, when the warpage of the back surface 10r is positive (+), the gap portion 91 formed between the back surface 10r and the surface of the susceptor 9 is a closed space. On the other hand, as shown in FIG. 1B, when the warpage of the back surface 10r is negative (−), the gap portion 91 formed between the back surface 10r and the surface of the susceptor 9 is an open space. Become. Therefore, when the group III nitride crystal layer 20 is grown on the crystal growth surface 10c of the substrate (GaN crystal substrate 10), the thermal distribution of the substrate when the warp is positive (+) is that the warp is negative (-). It becomes smaller than the heat distribution of the substrate. It is considered that a preferable warp region is larger on the + side than on the-side.

  Here, since the back surface 10r of the substrate (GaN crystal substrate 10) is generally large in surface roughness, the warp of the back surface 10r of the substrate (GaN crystal substrate 10) is measured by the following method in order to accurately measure the warpage of the back surface 10r. It was measured. That is, referring to FIG. 2, a method of measuring the warpage of the back surface, which is the surface opposite to the crystal growth surface of the substrate, using a laser displacement meter, the substrate being disposed on the substrate support, A substrate detection step S1 for detecting a plurality of displacement values respectively corresponding to a plurality of measurement points on the back surface of the substrate using a laser displacement meter, a noise removal step S2 for removing noise included in the plurality of displacement values, and a plurality of An outer peripheral portion removing step S3 for calculating a plurality of displacement values for calculation composed of a plurality of displacement values obtained by removing a plurality of displacement values respectively corresponding to measurement points on the outer peripheral portion of the substrate from the displacement values, and a plurality of displacement values for calculation. A smoothing step S4 for calculating a warped surface by smoothing, an optimum plane calculating step S5 for calculating an optimum plane that minimizes the distance from the warped surface, and the warped surface is largest on one side with respect to the optimum plane. Strange A measuring warpage of a rear surface of a method of the substrate including the warpage calculation step S6 for calculating the sum of distances between the value and the best fit plane and a distance and the other the greatest displacement value on the side and the best fit plane as warpage. With this measurement method, it is possible to measure the warpage of the back surface of the substrate even on a substrate having a large back surface roughness (for example, a surface roughness Ra of 50 nm or more). The surface roughness Ra is a reference length extracted from the roughness curve in the direction of the average line, and the absolute value of the deviation from the average line of the extracted portion to the measurement curve is summed up to obtain the reference length. The average value. In FIG. 2, steps surrounded by a solid line frame indicate essential steps, and steps surrounded by a broken line frame indicate optional steps.

  Here, referring to FIG. 3, the laser displacement meter 15 irradiates the back surface 10 r of the substrate (GaN crystal substrate 10) with a laser beam 31, thereby changing the displacement of the back surface 10 r of the substrate (GaN crystal substrate 10). A measuring device. The type of laser is not particularly limited, and a red semiconductor laser having a wavelength of 670 nm is used. The measurement method is not particularly limited, and a laser focus method is used. A laser focus type laser displacement meter is less accurate than an optical interference type flat tester, but can measure a rough back surface with a surface roughness Ra of 50 nm or more. Further, unlike the optical interference type flat tester, the laser focus type laser displacement meter can obtain the reflected light 31r, so that the displacement value can be analyzed and processed.

  With reference to FIG. 3, the substrate (GaN crystal substrate 10) is disposed on a substrate support 12. The method for disposing the substrate (GaN crystal substrate 10) on the substrate support base 12 is not particularly limited, but the crystal of the substrate (GaN crystal substrate 10) is formed on the substrate support base 12 having three support portions 12h. It is preferable to arrange the growth surface 10c so as to be supported by the three support portions 12h. By supporting the outer peripheral portion of the crystal growth surface 10c of the substrate (GaN crystal substrate 10) with only the three support portions 12h, damage to the crystal growth surface 10c during warpage measurement can be minimized. Further, even when the substrate (GaN crystal substrate 10) is inclined by the support of the above three points, an optimal plane is calculated so that the distance from the curved surface (referred to as a curved surface showing the curvature of the back surface, hereinafter the same) is minimized. Thus, by calculating the distance between the warped curved surface and the optimum plane, the inclination of the substrate (GaN crystal substrate 10) can be offset.

  Referring to FIGS. 2 to 4, substrate detection step S <b> 1 is not particularly limited, but the substrate (GaN crystal substrate 10) is staged in a two-dimensional direction (referred to as X direction and Y direction in FIG. 4, hereinafter the same). The distance L between the laser displacement meter 15 and the back surface 10r of the substrate (GaN crystal substrate 10) can be measured. Here, the stepwise movement of the substrate (GaN crystal substrate 10) in the two-dimensional direction is performed by moving the driving unit 13 connecting the substrate support 12 and the driving device 14 stepwise in the two-dimensional direction. Can be done. Here, the drive device 14 is controlled by the drive control device 16.

  At this time, the position data 32 in the two-dimensional direction of the measurement point (arbitrarily specified measurement point) 100p irradiated with the laser light 31 among the plurality of measurement points on the back surface of the substrate is supplied via the drive control device 16. Are collected in the data analysis device 18.

The method for measuring the distance L is not particularly limited, but can be performed by, for example, a laser focus method. Here, the laser focus method refers to the following measurement method. Incident light 31i from the light source in the laser displacement meter 15 passes through an objective lens (not shown) that moves up and down at a high speed by a tuning fork in the laser displacement meter 15 on the back surface 10r of the substrate (GaN crystal substrate 10). Irradiated to an arbitrarily specified measurement point 100p. The reflected light 31r from the arbitrarily specified measurement point 100p passes through a pinhole (not shown) in the laser displacement meter 15 and reaches a light receiving element (not shown). Due to the confocal principle, when focusing on an arbitrarily specified measurement point 100p on the back surface 10r of the substrate (GaN crystal substrate 10), the light is condensed to one point at the position of the pinhole and enters the light receiving element. By measuring the position of the tuning fork at this time with a sensor (not shown), the distance L between the laser displacement meter 15 and the arbitrarily specified measurement point 100p on the back surface 10r of the substrate (GaN crystal substrate 10) is measured. it can. In this way, it is possible to measure the displacement value z _{(a, b)} (referred to as the displacement value in the Z direction, hereinafter the same) at an arbitrarily specified measurement point 100p on the back surface 10r of the substrate (GaN crystal substrate 10). it can.

  At this time, the displacement value data 33 of the measurement point 100p arbitrarily specified among the plurality of measurement points 10p on the back surface 10r of the substrate (GaN crystal substrate 10) is transferred to the data analysis device 18 via the laser displacement meter control device 17. To be collected.

  Next, as shown in FIGS. 3 and 4, the substrate is moved stepwise (for example, at a constant pitch P in the X direction or the Y direction), and then the above measurement is performed, thereby arbitrarily specifying the above. The position data 32 and the displacement value data 33 in the two-dimensional direction are obtained for the measurement points adjacent to the measurement point 100p with the pitch P. By repeating this operation, the position data 32 in the two-dimensional direction (X direction and Y direction) and the displacement value data 33 in the Z direction for each of the plurality of measurement points 10p on the back surface 10r of the substrate (GaN crystal substrate 10) are obtained. can get. The position data 32 in the two-dimensional direction (X direction and Y direction) and the displacement value data 33 in the Z direction obtained in this way are collected in the data analysis device 18.

  As shown in FIG. 4, when the circular substrate (GaN crystal substrate 10) is moved stepwise in the two-dimensional direction at a constant pitch P, the laser beam is incident on the back surface 10r of the substrate (GaN crystal substrate 10). In some cases, the light is irradiated on the substrate support 12. As shown in FIG. 4, when the substrate (GaN crystal substrate 10) is disposed in the recess of the substrate support 12, the measurement point 120 a on the non-recess surface 12 a and the measurement point on the recess 12 b of the substrate support 12. 120b may be present.

  In such a case, referring to FIG. 3, the measurement points 120a and 120b are removed as follows, and a plurality of displacements respectively corresponding to the plurality of measurement points 10p on the back surface 10r of the substrate (GaN crystal substrate 10). The value can be detected. That is, the distance L between the laser displacement meter 15 and the non-recessed surface 12a of the substrate support 12 and the distance Lb between the laser displacement meter 15 and the recessed surface 12b of the substrate support 12 are L. However, by detecting only the arbitrarily specified measurement point 100p such that La <L <Lb, the measurement points 120a and 120b are removed, and a plurality of measurements on the back surface 10r of the substrate (GaN crystal substrate 10) are performed. A plurality of displacement values respectively corresponding to the point 10p are obtained.

The noise removal step is not particularly limited as long as it removes noise contained in a plurality of displacement values, but is preferably performed using a median filter. Here, referring to FIG. 5, the median filter means a plurality of displacement values (a plurality of displacement values respectively corresponding to a plurality of measurement points 10p on the back surface 10r of the substrate (GaN crystal substrate 10)). ), A displacement value z _{(a, b)} (referred to as a displacement value corresponding to an arbitrarily specified measurement point 100p, hereinafter the same), a displacement value z _{(a, b)} and a displacement value z _{( a} plurality of displacement values z _{(a-1, b + 1)} , z _{(a-1, b)} , z _{(a-1, b-1)} , z _{(a, b + 1)} close to _{a, b)} , Z _{(a, b-1)} , z _{(a + 1, b + 1)} , z _{(a + 1, b)} , z _{(a + 1, b-1)} (near an arbitrarily specified measurement point Median (median) when a plurality of measurement points 101p, 102p, 103p, 104p, 105p, 106p, 107p, and 108p are arranged in the order of ascending and descending. The filter to replace with Here, in FIG. 5, the displacement value z _{(a, b)} and a plurality of displacement values z _{(a-1, b + 1)} , z _{(a-1, b )} close to the displacement value z _{(a, b)} are shown. ₎ , Z _{(a-1, b-1)} , z _{(a, b + 1)} , z _{(a, b-1)} , z _{(a + 1, b + 1)} , z _{(a + 1, b)} , Z _{(a + 1, b-1)} are arranged at a constant pitch P in the two-dimensional direction (X direction and Y direction).

In FIG. 5, as a plurality of adjacent displacement values, eight adjacent displacement values z _{(a−1, b + 1)} and z _{(a−1, b)} surrounding an arbitrarily specified displacement value. , Z _{(a-1, b-1)} , z _{(a, b + 1)} , z _{(a, b-1)} , z _{(a + 1, b + 1)} , z _{(a + 1, b)} and Although z _{(a + 1, b-1)} is used (such a median filter is referred to as an 8-neighborhood median filter), the number of neighboring measurement points is not limited to eight. For example, 24 measurement points in the vicinity of the displacement value can also be used (such a median filter is called a median filter in the vicinity of 24).

  Further, the outer peripheral portion removing step may calculate a plurality of displacement values for calculation composed of a plurality of displacement values obtained by removing a plurality of displacement values respectively corresponding to measurement points on the outer peripheral portion of the substrate from the plurality of displacement values. Although there is no particular limitation, when a median filter near 8 is used in the noise removal step, referring to FIG. 4, each of the plurality of displacement values is used as a measurement point on the outer peripheral portion of the substrate (GaN crystal substrate 10). As the corresponding displacement values, it is preferable to remove the displacement values corresponding to the respective measurement points 111p and 112p from the outer periphery 10e to at least two insides.

  When using a median filter in the vicinity of 8 in the noise removal step, referring to FIG. 4, at least eight displacement values near the displacement values on the one and two inner sides from the outer periphery 10 e of the substrate (GaN crystal substrate 10) will be described. This is because one displacement value is a displacement value of the non-recessed surface 12a or the recessed surface 12b of the substrate support base 12, and noise is not removed by the noise removing step. In this way, a plurality of displacement values respectively corresponding to the measurement points on the outer peripheral portion of the substrate are removed from the plurality of displacement values, and a plurality of calculation displacement values including a plurality of displacement values are obtained.

The smoothing step is not particularly limited as long as it can calculate the warped curved surface 40 by smoothing the plurality of displacement values for calculation with reference to FIG. 7, but is performed using a Gaussian filter. Is preferred. Here, the Gaussian filter refers to a displacement value z _{(a, b)} arbitrarily specified in a plurality of displacement values for calculation close to the displacement value z _{(a, b)} and the displacement value z _{(a, b)} . Multiple displacement values z _{(a-1, b + 1)} , z _{(a-1, b)} , z _{(a-1, b-1)} , z _{(a, b + 1)} , z _{(a, b- 1)} , z _{(a + 1, b + 1)} , z _{(a + 1, b)} , weighted average using Gaussian function f (x, y) for z _{(a + 1, b-1)} as a weight A filter that is replaced with the value z ′ _{(a, b)} . By this smoothing treatment, it is possible to measure warpage even on a back surface having a large surface roughness (for example, a surface roughness Ra of 50 nm or more).

A two-dimensional Gaussian function f (x, y) is expressed by the following equation (1). Here, a and b are coordinate values in the X direction and Y direction of arbitrarily specified measurement points, σ is a standard deviation (σ ² is variance), and N is a normalization constant.

  As is clear from the equation (1), the value of f (x, y) decreases as the distance between the measurement point (x, y) and the arbitrarily specified measurement point (a, b) increases. Becomes smaller. Further, as the value of σ increases, the difference in weight due to the difference in distance between the measurement point (x, y) and the measurement point (a, b) decreases.

In the above, as a plurality of adjacent displacement values, eight adjacent displacement values z _{(a-1, b + 1)} , z _{(a-1, b)} , z _{( a-1, b-1)} , z _{(a, b + 1)} , z _{(a, b-1)} ,
z _{(a + 1, b + 1)} , z _{(a + 1, b)} and z _{(a + 1, b-1)} are used (such a Gaussian filter is called an 8-neighbor Gaussian filter) The plurality of displacement values is not limited to eight. For example, 24 displacement values in the vicinity of the displacement value can also be used (such a Gaussian filter is referred to as a 24 neighborhood Gaussian filter).

Specifically, the use of a Gaussian filter in the vicinity of 8 means that an arbitrarily specified displacement value z _{(a, b)} is replaced with a plurality of displacement values z _{(a-1, b + 1)} , z shown in FIG. _{(a-1, b)} , z _{(a-1, b-1)} , z _{(a, b + 1)} , z _{(a, b)} , z _{(a, b-1)} , z _{(a + 1, For each of b + 1)} , z _{(a + 1, b)} and z _{(a + 1, b-1)} , the kernel of FIG. 6A (filter coefficients at each displacement value are displayed in a matrix format. Weighted average with weights of Gaussian functions f (x, y) (where x = a-1, a, a + 1; y = b-1, b, b + 1) as coefficients shown in FIG. Is replaced with z ′ _{(a, b)} . That is, z ′ _{(a, b)} is obtained as in the following formula (2).

  The Gaussian function f (x, y) serving as each coefficient of the Gaussian filter is determined by the distance of the measurement point (x, y) from the measurement point (a, b) of the arbitrarily specified displacement value and the standard deviation σ. For example, FIG. 6B shows an array of values of coefficients f (x, y) of 8 neighboring Gaussian filters before standardization, σ = 5, and FIG. 6C shows σ = 5, after standardization. The array of the values of the respective coefficients f (x, y) of the eight neighboring Gaussian filters is shown. Here, normalization means correcting the sum of the coefficients f (x, y) to be 1 while maintaining the ratio of the coefficients f (x, y) of the Gaussian filter.

  The optimum plane calculation step is not particularly limited as long as it calculates the optimum plane 50 that minimizes the distance to the warped curved surface 40 with reference to FIG. 7, but a plurality of calculations subjected to smoothing processing are performed. It is preferable to calculate the optimum plane 50 so that the sum of the squares of the distances between the respective displacement values and the optimum plane 50 in the use displacement value is minimized. By using this least square method, the optimum plane 50 showing the average inclination of the entire back surface 10r of the substrate (GaN crystal substrate 10) supported at three points is obtained.

In the warp calculation step, referring to FIG. 7, the warped curved surface 40 has the largest displacement value z _P on one side with respect to the optimum plane 50 and the distance D ₊ between the optimum plane and the most on the other side. The sum of the large displacement value z _V and the distance D ₋ between the optimum plane is calculated as a warp. In this way, the warp of the back surface 10r of the substrate (GaN crystal substrate 10) is accurately measured by canceling the inclination of the entire back surface 10r of the substrate (GaN crystal substrate 10) indicated by the optimal plane 50 from the warped curved surface 40. can do. Accordingly, the warpage w _(R) of the back surface 10r of the GaN crystal substrate 10 is calculated by w _(R) = D ₊ + D ₋ .

  In the above-described warpage measurement method of the GaN crystal substrate, referring to FIG. 2, the optimization cycle C1 including the smoothing step S4, the optimum plane calculation step S5, and the warpage calculation step S6 is repeated one or more times. It is preferable. By repeating this optimization cycle C1 one or more times, the warped curved surface of the back surface 10r of the substrate (GaN crystal substrate 10) is made smoother, thereby reducing the influence of surface roughness and further reducing the warpage of the back surface 10r. It can be measured accurately. Here, the number of repetitions of the optimization cycle C1 is not particularly limited, but the difference between the warp value before the optimal cycle and the warp value after the optimization cycle is preferably 0.5 μm or less, more preferably 0. It can be the number of repetitions until it becomes 1 μm or less. The ratio of the difference between the warp value before the optimal cycle and the warp value after the optimization cycle to the warp value before the optimal cycle is preferably 0.05 or less, more preferably 0.01 or less. It can be repeated.

  In addition, referring to FIG. 2, it is preferable to include at least one noise removal step S2 during the repetition of the optimization cycle C1 or after the smoothing step S4 in the optimization cycle C1. By including at least one noise removal step S2 at such timing, it becomes possible to more effectively remove noise included in the plurality of displacement values, and the warpage of the back surface 10r can be measured more accurately.

In the GaN crystal substrate of this embodiment, the surface roughness Ra _(R) of the back surface is preferably Ra _(R) ≦ 10 μm. Here, the surface roughness Ra is also called the arithmetic average roughness Ra, and is extracted from the roughness curve by a reference length in the direction of the average line, and the absolute value of the deviation from the average line of the extracted portion to the measurement curve. Is the value obtained by summing and averaging the values by the reference length). When the surface roughness Ra _(R) on the back surface is Ra _(R) > 10 μm, when growing at least one group III nitride crystal layer as a semiconductor layer on the crystal growth surface side of the GaN crystal substrate, The contact between the substrate and the susceptor becomes uneven, and the distribution of heat transferred from the susceptor to the GaN crystal substrate becomes uneven. From the viewpoint of reducing the heat distribution of the GaN crystal substrate, the surface roughness Ra _(R) of the back surface is more preferably Ra _(R) ≦ 6 μm.

On the other hand, if the surface roughness Ra _(R) on the back surface is too small, the heat radiation emitted from the susceptor heated to a high temperature is reflected on the back surface, and the absorption of the heat reflected light on the substrate is reduced. The heating efficiency is reduced. From this viewpoint, it is preferable that the rear surface has a surface roughness Ra _(R) is Ra _(R) ≧ 1μm, and more preferably Ra _(R) ≧ 2μm.

In the GaN crystal substrate of the present embodiment, the surface roughness Ry _(R) of the back surface is preferably Ry _(R) ≦ 75 μm. Here, the surface roughness Ry is also called the maximum height Ry, and is extracted from the roughness curve by the reference length in the direction of the average line, and the height from the average surface of the extracted portion to the highest peak and the lowest. The sum of the depth to the bottom of the valley. When the surface roughness Ry _(R) on the back surface is Ry _(R) > 75 μm, when growing at least one group III nitride crystal layer as a semiconductor layer on the crystal growth surface side of the GaN crystal substrate, The contact between the substrate and the susceptor becomes uneven, and the distribution of heat transferred from the susceptor to the GaN crystal substrate becomes uneven. From the viewpoint of reducing the heat distribution of the GaN crystal substrate, the surface roughness Ry _(R) of the back surface is more preferably Ry _(R) ≦ 50 μm.

On the other hand, if the surface roughness Ry _(R) on the back surface becomes too small, the heat radiation emitted from the susceptor heated to a high temperature is reflected on the back surface, and the absorption of the heat reflected light on the substrate is reduced. The heating efficiency is reduced. From this viewpoint, the surface roughness Ry _(R) on the back surface is preferably Ry _(R) ≧ 3 μm, and more preferably Ry _(R) ≧ 10 μm.

In the GaN crystal substrate of this embodiment, the smaller the absolute value of the warp w _{(C) and} the surface roughness Ra _(C) and Ry _(C) of the crystal growth surface of the substrate, the more the semiconductor is grown on the crystal growth surface side. The crystallinity of the Group III nitride crystal layer, which is a layer, is increased. From this viewpoint, the warp w _(C) of the crystal growth surface of the GaN crystal substrate is preferably −50 μm ≦ w _(C) ≦ 50 μm, and more preferably −35 μm ≦ w _(C) ≦ 45 μm. Further, the surface roughness Ra _(C) of the crystal growth surface is preferably Ra _(C) ≦ 10 nm, and more preferably Ra _(C) ≦ 5 nm. The surface roughness Ry _(C) of the crystal growth surface is preferably Ry _(C) ≦ 60 nm, and more preferably Ry _(C) ≦ 30 nm. Here, with reference to FIG. 1, the warp w _(C) is defined as a difference in height between the displacement value z _CP of the most convex portion and the displacement value z _CV of the most concave portion in the crystal growth surface 10c.

Note that the GaN crystal substrate of this embodiment preferably has a higher absorption coefficient of heat radiation light from the viewpoint of increasing the heating efficiency of the substrate. From this viewpoint, the absorption coefficient of light having a peak wavelength of 450 nm to 550 nm in the GaN crystal substrate of the present embodiment is preferably 1.5 cm ⁻¹ or more and 10 cm ⁻¹ or less. When the light absorption coefficient is lower than 1.5 cm ⁻¹ , the light is transmitted and not absorbed, and the heating efficiency of the substrate is lowered. If the light absorption coefficient is higher than 10 cm ⁻¹ , the impurities in the substrate are large and the crystallinity is lowered.

In addition, the thermal conductivity of the GaN crystal substrate of this embodiment is preferably 160 W / mK or more from the viewpoint of reducing the heat distribution in the substrate. Further, the thermal expansion coefficient of the GaN crystal substrate of the present embodiment is preferably 3 × 10 ⁻⁶ K ⁻¹ or more and 6 × 10 ⁻⁶ K ⁻¹ or less from the viewpoint of suppressing deformation of the substrate at the time of temperature increase / decrease. .

(Embodiment 2)
The method for manufacturing a GaN crystal substrate according to the present invention is a method for manufacturing a GaN crystal substrate according to Embodiment 1 with reference to FIG. 8, and a step of cutting the GaN crystal substrate 10 from the GaN crystal 1 (FIG. 8A). And the process of processing the back surface 10r of the GaN crystal substrate 10 (see FIG. 8B), the process of processing the back surface 10r of the GaN crystal substrate 10 includes a step of grinding the back surface 10r, and a back surface 10r. And at least one of a step of etching the back surface 10r.

  Referring to FIG. 8A, the step of cutting the GaN crystal substrate 10 from the GaN crystal 1 is a GaN crystal having a predetermined shape by using an inner peripheral blade, an outer peripheral blade, a wire saw or the like from the grown GaN crystal 1. This refers to a process of cutting out the substrate 10. Here, the growth method of the GaN crystal 1 is not particularly limited. However, since a large crystal having a diameter of 5.08 cm (2 inches) or more can be obtained in a relatively short time, the HVPE method, the MOVPE method, etc. A phase growth method is preferably used.

Referring to FIG. 8B, the process of processing the back surface 10r of the GaN crystal substrate 10 includes a process of grinding the back surface 10r of the GaN crystal substrate 10 (grinding process) and a process of polishing the back surface of the GaN crystal substrate 10 ( At least one of a polishing step) and a step of etching the back surface of the GaN crystal substrate (etching step). By performing the process of processing the back surface of the GaN crystal substrate including this process, a GaN crystal substrate having a back surface warp w _(R) that is the surface opposite to the crystal growth surface of −50 μm ≦ w ≦ 50 μm is obtained. . Further, by adjusting grinding conditions, polishing conditions and / or etching conditions, the surface roughness Ra _(R) of the back surface is Ra _(R) ≦ 10 μm and / or the surface roughness Ry _{(R) of the} back surface is Ry _{(R )} A GaN crystal substrate with ≦ 75 μm is obtained.

Here, grinding (gliding) means that the surface of the object is scraped off by bringing the fixed abrasive grains with the abrasive grains fixed by bonding into contact with the object while rotating at high speed. A rough surface is formed by this grinding. When grinding the back surface of a GaN crystal substrate, it is formed of SiC, Al ₂ O ₃ , diamond and CBN (cubic boron nitride, the same shall apply hereinafter) having a hardness higher than that of a GaN crystal, and having a grain size of about 10 μm to 100 μm Fixed abrasive grains containing grains are preferably used.

In addition, polishing (lapping) refers to contact between a surface plate and an object while rotating each other through loose abrasive grains (referred to as non-fixed abrasive grains hereinafter), or fixed abrasive grains and an object. The surface of the object is polished by rotating and rotating each other. By this polishing, a surface having a surface roughness smaller than that in the case of grinding and a surface rougher than that in the case of fine polishing (polishing) is formed. When the back surface of the GaN crystal substrate is polished, abrasive grains that are formed of SiC, Al ₂ O ₃ , diamond, CBN, and the like, which are harder than GaN crystals, and have a grain size of about 0.5 μm to 15 μm are preferably used.

Etching refers to cutting (cutting) of an object, and subsequent work-affected layers and residues resulting from grinding and / or polishing of the surface of the object (for example, cutting scraps, grinding scraps, polishing scraps, abrasive grains) In order to remove wax or the like, the surface is chemically or physically etched (etched portion 10u). The roughness of the surface is maintained even by such etching. When the back surface of the GaN crystal substrate is etched, wet etching with an etchant is preferably performed. Etching agents include NH ₃ and H ₂ O ₂ mixed solution, KOH solution, NaOH solution, HCl solution, H ₂ SO ₄ solution, H ₃ PO ₄ solution, H ₃ PO ₄ and H ₂ SO ₄ mixed solution, etc. Is preferably used. Here, water is preferably used as the solvent of the above solution and mixed solution. The etching agent can be appropriately diluted with a solvent such as water.

In the method for manufacturing a GaN crystal substrate according to this embodiment, the crystal growth surface of the GaN crystal substrate is processed. In order to manufacture a semiconductor device with good characteristics, it is necessary to grow at least one group III nitride crystal layer having good crystallinity on the crystal growth surface side as a semiconductor layer. Therefore, the warp w _(C) of the crystal growth surface of the GaN crystal substrate is −50 μm ≦ w _(C) ≦ 50 μm, the surface roughness Ra _(C) of the crystal growth surface is Ra _(C) ≦ 10 nm, and the crystal growth surface is The surface roughness Ry _(C) is preferably Ry _(C) ≦ 60 nm.

In order to obtain a crystal growth surface having the warp w _(C) , surface roughness Ra _(C) and Ry _(C) , in the step of processing the crystal growth surface of the GaN crystal substrate cut out from the GaN crystal, In addition to the grinding process, polishing process and / or etching process similar to the grinding process, polishing process and / or etching process in the process of treating the back surface, a fine polishing (polishing) process is performed.

  Here, the fine polishing (polishing) means that the polishing pad and the target object are brought into contact with each other through the loose abrasive grains, or the fixed abrasive grains and the target object are brought into contact with each other while being rotated. This means that the surface of an object is finely polished and smoothed. By such fine polishing, a crystal growth surface having a smaller surface roughness than that in the case of polishing is formed.

Such a fine polishing method is not particularly limited, but mechanical polishing or chemical mechanical polishing (hereinafter referred to as CMP) is preferably used. In mechanical polishing or CMP, the surface of an object is finely polished mechanically or chemically and mechanically by bringing the polishing pad and the object into contact with each other through a slurry containing abrasive grains while rotating each other. How to do. As the abrasive grains, in order to reduce the surface roughness Ra and Ry, SiC, Si ₃ N ₄ , Al ₂ O ₃ , fine particles having an average particle diameter of 0.1 μm or more and 3 μm or less and having a hardness higher than that of GaN, Diamond, CBN, etc., and SiO ₂ , CuO, TiO ₂ , ZnO, NiO, Cr ₂ O ₃ , Fe ₂ O ₃ , CoO, MnO, etc., which are lower in hardness than GaN, are used alone or in combination. In order to enhance the chemical polishing effect, the slurry should be acidic with pH ≦ 5 or basic with pH ≧ 9, or hydrogen peroxide (H ₂ O ₂ ), dichloroisocyanuric acid, nitric acid It is preferable that an ORP (oxidation-reduction potential) is increased by adding an oxidizing agent such as potassium permanganate or copper chloride (for example, ORP ≧ 400 mV).

(Embodiment 3)
In one embodiment of the method for manufacturing a semiconductor device according to the present invention, referring to FIG. 9, a GaN crystal substrate 10 is selected as a substrate, and at least one group III is formed on the crystal growth surface 10c side of the GaN crystal substrate 10. A step of growing the nitride crystal layer 20. By such a manufacturing method, a uniform group III nitride crystal layer 20 as a semiconductor layer can be stably grown on the crystal growth surface 10c side of the GaN crystal substrate 10, and a semiconductor device 99 having good characteristics can be obtained.

More specifically, in the semiconductor device manufacturing method of the present embodiment, first, referring to FIG. 9A, first, the group III nitride crystal layer 20 is formed on the crystal growth surface 10 c of the GaN crystal substrate 10. As a result, an n-type GaN layer 21, an In _0.2 Ga _0.8 N layer 22, an Al _0.2 Ga _0.8 N layer 23, and a p-type GaN layer 24 are sequentially formed to obtain a semiconductor laminated wafer 80. Next, referring to FIG. 9B, an n-side electrode 81 is formed on the back surface 10r of the GaN crystal substrate 10 of the semiconductor laminated wafer 80, and the upper surface of the group III nitride crystal layer 20 (that is, the p-type GaN layer). A p-side electrode 82 is formed on the upper surface of 24 to obtain a semiconductor device wafer 90. Next, referring to FIG. 9C, the semiconductor device wafer 90 is divided into chips to obtain LEDs (light emitting diodes) that are the semiconductor devices 99.

(Comparative Example 1)
1. Production of GaN Crystal Substrate Referring to FIG. 8A, a GaN crystal substrate 10 having a diameter of 5.08 cm (2 inches) × thickness of 550 μm is cut out from the GaN crystal 1 grown by the HVPE method, and FIG. Referring to FIG. 5, the back surface 10r and the crystal growth surface 10c of the GaN crystal substrate 10 were processed as follows. The back surface treatment is performed by grinding using fixed abrasive grains in which CBN abrasive grains having a particle diameter of 125 μm are fixed with bonds (grinding process), and polishing using diamond abrasive grains having a particle diameter of 24 μm (polishing process), and 30% by mass. Etching using a mixed aqueous solution of NH ₃ and H ₂ O ₂ prepared by mixing 1: 1 aqueous ammonia, 40% by mass of hydrogen peroxide and pure water in a volume ratio of 1: 1: 2 (etching step) Performed. In addition, the crystal growth surface is processed by using fixed abrasive grains in which CBN abrasive grains having an average grain diameter of 125 μm are fixed with bonds (grinding process), and SiC grains having average grain diameters of 20 μm, 10 μm, and 5 μm are sequentially used. Polishing (polishing process), etching using 30% by weight NaOH aqueous solution (etching process), and CMP using a slurry of pH = 12, ORP = 450 mV containing TiO ₂ abrasive grains having an average particle diameter of 1 μm (Fine polishing step).

2. Measurement of Warpage and Surface Roughness of Back Surface and Crystal Growth Surface of GaN Crystal Substrate With reference to FIG. 1, the warp w _(R) of the back surface 10r of the GaN crystal substrate 10 subjected to the above-described treatment is expressed by a laser focus type laser. Displacement meter (LT-9010 (Laser output unit) and LT-9500 (Laser control unit) manufactured by Keyence), XY position controller (CP-500 manufactured by Coms), and high-speed analog voltage data acquisition device (CA-800 manufactured by Coms) ) And measured as follows. For this laser displacement meter, a red semiconductor laser having a laser wavelength of 670 nm was used.

  2 to 4, first, the GaN crystal substrate 10 was placed on the substrate support 12 so that the outer peripheral portion of the crystal growth surface 10c was supported by the three support portions 12h. Next, a plurality of displacement values respectively corresponding to the plurality of measurement points 10p on the back surface 10r of the GaN crystal substrate 10 were detected using the laser displacement meter 15 (substrate detection step S1). Here, the pitch P of the measurement point 10p was 700 μm, and a plurality of displacement values respectively corresponding to the plurality of measurement points 10p of about 5000 were measured. Next, noise included in the plurality of displacement values was removed using a median filter in the vicinity of 8 (noise removal step S2). Next, a plurality of displacement values for calculation composed of a plurality of displacement values obtained by removing a plurality of displacement values respectively corresponding to the measurement points from the outer periphery 10e of the GaN crystal substrate 10 to the three inner points from the plurality of displacement values (periphery Part removal step S3).

  Next, a warped curved surface was calculated by smoothing the plurality of calculation displacement values using a Gaussian filter in the vicinity of σ = 5 after normalization shown in FIG. Step S4). Next, the optimum plane was calculated so that the sum of the squares of the distances between the displacement values and the optimum plane in the plurality of calculation displacement values subjected to the smoothing process was minimized (optimum plane calculation step S5). Next, the sum of the distance between the largest displacement value and the optimum plane on one side and the distance between the largest displacement value and the optimum plane on the other side is calculated as a warp with respect to the optimum plane (warp calculation step S6). ). The warpage calculated in this way was 57.4 μm.

  Next, again, noise included in a plurality of displacement values for calculation is removed using a median filter in the vicinity of 8 (noise removal step S2), and then the above-described smoothing step S4, optimal plane calculation step S5, and warp calculation step The optimization cycle in which S6 is performed in this order was repeated once. The warpage calculated in this way was 54.9 μm.

The above optimization cycle was then repeated once more. The warpage calculated in this way is 54.5 μm, and since the difference from the previous calculated warpage is 0.5 μm or less, the optimization cycle is finished, and the warpage w _(R) of the back surface of the GaN crystal substrate is 54.5 μm. And calculated. Further, the warp w _(C) of the crystal growth surface 10c of the GaN crystal substrate 10 subjected to the above-described treatment was measured using an optical interference type flatness tester and found to be 48.2 μm.

Further, the surface roughness Ra _(R) of the back surface 10r of the GaN crystal substrate 10 subjected to the above treatment and the surface roughness Ra _(C) of the crystal growth surface 10c are respectively measured by 3D-SEM (stereoscopic scanning electron microscope). Measured in the range of 110 μm × 80 μm and in the range of 750 μm × 700 μm using a laser displacement meter of the laser focus method, and extracted from the measurement curve arbitrarily from the roughness curve by the reference length in the direction of the average line When the absolute values of deviations from the average line of the extracted part to the measurement curve are summed and averaged with the reference length, Ra _(R) = 11.8 μm, Ra _(C) = 4 nm there were.

The above-mentioned processing has been surface roughness Ry of rear surface 10r of GaN crystal substrate 10 _(R) and the surface roughness Ry of the crystal growth surface 10c _(C), 750μm × using a laser displacement meter employing the laser focus technique Measured in the range of 700 μm, extracted from the roughness curve arbitrarily specified from this measurement range by the reference length in the direction of the average line, from the average surface of this extracted part to the highest peak and the lowest valley bottom When the sum with the depth was calculated, Ry _(R) = 89.2 μm and Ry _(C) = 38 nm.

In addition, the absorption coefficient of light having a peak wavelength of 450 nm to 550 nm of the GaN crystal substrate 10 subjected to the above treatment was 6.8 cm ^{−1 as} measured by a spectroscopic measurement device. Further, the thermal conductivity of the GaN crystal substrate 10 was 165 W / mK when measured in a range of 18 mm × 18 mm using a two-dimensional measurement method using laser fluff. The thermal expansion coefficient of the GaN crystal substrate 10 was 4.2 × 10 ⁻⁶ K ^{−1 as} measured by a laser interferometry.

3. Manufacturing of Semiconductor Device Referring to FIG. 9A, an n-type GaN layer 21 having a thickness of 5 μm is formed as a group III nitride crystal layer 20 on the crystal growth surface 10c of the GaN crystal substrate 10 by the MOVPE method. Then, an In _0.2 Ga _0.8 N layer 22 having a thickness of 3 nm, an Al _0.2 Ga _0.8 N layer 23 having a thickness of 60 nm, and a p-type GaN layer 24 having a thickness of 150 nm were sequentially grown to obtain a semiconductor laminated wafer 80. The distribution of light emission intensity of the obtained semiconductor laminated wafer 80 was evaluated by a photoluminescence method (hereinafter referred to as PL method).

Specifically, any layer of the group III nitride crystal layer 20 is formed at a plurality of measurement points on the main surface on the group III nitride crystal layer 20 side of the semiconductor laminated wafer 80 having a diameter of 5.08 cm (2 inches). Laser light having a larger energy than the forbidden band width (He—Cd laser light having a peak wavelength of 325 nm) was irradiated, and the intensity of the excited light emission was measured. Each measurement point extends over the entire main surface of the semiconductor laminated wafer 80 on the group III nitride crystal layer 20 side, and is arranged at a pitch of 1 mm in a two-dimensional direction parallel to the main surface. Here, the distribution of the emission intensity in the semiconductor laminated wafer 80 is the percentage of the emission intensity _{IE in} the outer peripheral portion within 5 mm from the outer periphery 80e having the lowest emission intensity with respect to the emission intensity I _{C in the} central portion having the highest emission intensity (100 × I _E / I _C, below, were evaluated using a) that the relative light emission intensity in the outer peripheral portion. The smaller the value of the relative light emission intensity at the outer peripheral part, the larger the distribution of the light emission intensity, and the larger the value of the relative light emission intensity at the outer peripheral part, the smaller the light emission intensity distribution. The relative light emission intensity at the outer peripheral portion in this comparative example was 0.06, and the light emission intensity distribution was large. The results are summarized in Table 1.

  Next, referring to FIG. 9B, an n-side electrode having a diameter of 80 μm and a thickness of 100 nm is formed at a position that becomes the center of the back surface 10r of the GaN crystal substrate 10 when the semiconductor laminated wafer 80 is separated into chips. 81 was formed, and a p-side electrode 82 having a thickness of 100 nm was formed on the upper surface of the p-type GaN layer 24 to obtain a semiconductor device wafer 90.

  Next, referring to FIG. 9C, the semiconductor device wafer 90 was separated into 400 μm × 400 μm chips, and an LED as the semiconductor device 99 was obtained. The yield of the obtained semiconductor devices 99 (referring to the percentage of the number of semiconductor devices having a constant light emission intensity with respect to the total number of semiconductor devices formed into chips and the same applies hereinafter) was as low as 25%. . The results are summarized in Table 1.

(Example 1)
In the processing of the back surface during the production of the GaN crystal substrate, grinding is performed using a fixed abrasive grain in which CBN abrasive grains having a grain size of 84 μm are fixed with a bond (grinding process), and polishing is performed using SiC abrasive grains having a grain size of 12 μm. (Polishing) Etching using a mixed aqueous solution of H ₃ PO ₄ and H ₂ SO ₄ in which 85% by mass phosphoric acid aqueous solution and 90% by mass sulfuric acid aqueous solution are mixed at a volume ratio of 1: 1 ( A GaN crystal substrate was manufactured in the same manner as in Comparative Example 1 except that the etching step was performed, and the warpage and surface roughness of the back surface and crystal growth surface of the GaN crystal substrate were measured. The warp w _(R) of the back surface of the obtained GaN crystal substrate was −22.8 μm, the surface roughness Ra _(R) was 10.2 μm, and the surface roughness Ry _(R) was 78.5 μm. The warp w _(C) of the crystal growth surface of this GaN crystal substrate was −17.4, and the surface roughness Ra _(C) and Ry _(C) were both the same as in Comparative Example 1. Further, the absorption coefficient, thermal conductivity, and thermal expansion coefficient of light having a peak wavelength of 450 nm to 550 nm of the GaN crystal substrate were all the same as those in Comparative Example 1.

  Next, using the GaN crystal substrate obtained in this example, in the same manner as in Comparative Example 1, a semiconductor device was manufactured through a semiconductor laminated wafer and a semiconductor device wafer. The relative light emission intensity at the outer peripheral portion of the semiconductor laminated wafer of this example was as large as 0.16 (that is, the light emission intensity distribution was small). The yield of semiconductor devices was as high as 44%. The results are summarized in Table 1.

(Example 2)
In the treatment of the back surface during the production of the GaN crystal substrate, grinding is performed using a fixed abrasive in which Al ₂ O ₃ abrasive grains having a particle size of 63 μm are fixed by bonding (grinding process), and Al ₂ O ₃ abrasive having a particle size of 8 μm. A GaN crystal substrate was produced in the same manner as in Comparative Example 1 except that polishing was performed using grains (polishing step) and etching was performed using a 25% by mass KOH aqueous solution (etching step). The warpage and surface roughness of the back surface and crystal growth surface of the GaN crystal substrate were measured. The warp w _(R) of the back surface of the obtained GaN crystal substrate was −19.1 μm, the surface roughness Ra _(R) was 6.8 μm, and the surface roughness Ry _(R) was 55 μm. The warp w _(C) of the crystal growth surface of the GaN crystal substrate was −16.7 μm, and the surface roughness Ra _(C) and Ry _(C) were both the same as in Comparative Example 1. Further, the absorption coefficient, thermal conductivity, and thermal expansion coefficient of light having a peak wavelength of 450 nm to 550 nm of the GaN crystal substrate were all the same as those in Comparative Example 1.

  Next, using the GaN crystal substrate obtained in this example, in the same manner as in Comparative Example 1, a semiconductor device was manufactured through a semiconductor laminated wafer and a semiconductor device wafer. The relative light emission intensity at the outer peripheral portion of the semiconductor laminated wafer of this example was as large as 0.29 (that is, the light emission intensity distribution was small). The yield of semiconductor devices was as high as 57%. The results are summarized in Table 1.

(Example 3)
In the processing of the back surface during the manufacture of the GaN crystal substrate, grinding is performed using a fixed abrasive grain in which diamond abrasive grains having a particle diameter of 32 μm are fixed with a bond (grinding process), and etching is performed using an aqueous solution of 25 mass% KOH. A GaN crystal substrate was manufactured in the same manner as in Comparative Example 1 except that this was done by etching (etching step), and the warpage and surface roughness of the back surface and crystal growth surface of the GaN crystal substrate were measured. The warp w _(R) of the back surface of the obtained GaN crystal substrate was −3.4 μm, the surface roughness Ra _(R) was 4.9 μm, and the surface roughness Ry _(R) was 31.9 μm. The warp w _(C) of the crystal growth surface of the GaN crystal substrate was −4.6 μm, and the surface roughness Ra _(C) and Ry _(C) were both the same as in Comparative Example 1. Further, the absorption coefficient, thermal conductivity, and thermal expansion coefficient of light having a peak wavelength of 450 nm to 550 nm of the GaN crystal substrate were all the same as those in Comparative Example 1.

  Next, using the GaN crystal substrate obtained in this example, in the same manner as in Comparative Example 1, a semiconductor device was manufactured through a semiconductor laminated wafer and a semiconductor device wafer. The relative light emission intensity at the outer peripheral portion of the semiconductor laminated wafer of this example was as large as 0.41 (that is, the light emission intensity distribution was small). The yield of semiconductor devices was as high as 70%. The results are summarized in Table 1.

Example 4
In the processing of the back surface during the production of the GaN crystal substrate, grinding is performed using a fixed abrasive in which SiC abrasive grains having a grain size of 30 μm are fixed by bonding (grinding process), and polishing is performed using diamond abrasive grains having a grain diameter of 6 μm. (Polishing step) Using a mixed aqueous solution of NH ₃ and H ₂ O ₂ in which 30% by mass of ammonia water, 40% by mass of hydrogen peroxide water and pure water were mixed at a volume ratio of 1: 1: 6. A GaN crystal substrate was manufactured in the same manner as in Comparative Example 1 except that the etching was performed by etching (etching process), and the warpage and surface roughness of the back surface and crystal growth surface of the GaN crystal substrate were measured. . The warp w _(R) of the back surface of the obtained GaN crystal substrate was 4.8 μm, the surface roughness Ra _(R) was 3.8 μm, and the surface roughness Ry _(R) was 23.8 μm. The warp w _(C) of the crystal growth surface of the GaN crystal substrate was 2.8 μm, and the surface roughnesses Ra _(C) and Ry _(C) were the same as in Comparative Example 1. Further, the absorption coefficient, thermal conductivity, and thermal expansion coefficient of light having a peak wavelength of 450 nm to 550 nm of the GaN crystal substrate were all the same as those in Comparative Example 1.

  Next, using the GaN crystal substrate obtained in this example, in the same manner as in Comparative Example 1, a semiconductor device was manufactured through a semiconductor laminated wafer and a semiconductor device wafer. The relative light emission intensity at the outer peripheral portion of the semiconductor laminated wafer of this example was as large as 0.38 (that is, the light emission intensity distribution was small). The yield of semiconductor devices was as high as 68%. The results are summarized in Table 1.

(Example 5)
In the processing of the back surface during the production of a GaN crystal substrate, grinding is performed using a fixed abrasive grain in which SiC abrasive grains having a grain size of 37 μm are fixed with a bond (grinding process), and etching is performed using a 25% by mass KOH aqueous solution. A GaN crystal substrate was produced in the same manner as in Comparative Example 1 except that the etching step was performed, and the warpage and surface roughness of the back surface and crystal growth surface of the GaN crystal substrate were measured. The warp w _(R) of the back surface of the obtained GaN crystal substrate was 9.9 μm, the surface roughness Ra _(R) was 5.5 μm, and the surface roughness Ry _(R) was 38.7 μm. The warp w _(C) of the crystal growth surface of the GaN crystal substrate was 10.4 μm, and the surface roughness Ra _(C) and Ry _(C) were the same as in Comparative Example 1. Further, the absorption coefficient, thermal conductivity, and thermal expansion coefficient of light having a peak wavelength of 450 nm to 550 nm of the GaN crystal substrate were all the same as those in Comparative Example 1.

  Next, using the GaN crystal substrate obtained in this example, in the same manner as in Comparative Example 1, a semiconductor device was manufactured through a semiconductor laminated wafer and a semiconductor device wafer. The relative light emission intensity at the outer peripheral portion of the semiconductor laminated wafer of this example was as large as 0.3 (that is, the light emission intensity distribution was small). Moreover, the yield of semiconductor devices was as high as 65%. The results are summarized in Table 1.

(Example 6)
In the processing of the back surface during the production of a GaN crystal substrate, grinding is performed using a fixed abrasive grain in which diamond abrasive grains having a grain size of 74 μm are fixed with a bond (grinding process), and polishing is performed using CBN abrasive grains having a grain diameter of 15 μm. (Polishing step) A GaN crystal substrate was manufactured in the same manner as in Comparative Example 1 except that etching was performed using an aqueous solution of 85 mass% H ₃ PO ₄ (etching step). The warpage and surface roughness of the back surface and crystal growth surface of the crystal substrate were measured. The warp w _(R) of the back surface of the obtained GaN crystal substrate was 19.3 μm, the surface roughness Ra _(R) was 10.8 μm, and the surface roughness Ry _(R) was 81.9 μm. The warp w _(C) of the crystal growth surface of the GaN crystal substrate was 23.0 μm, and the surface roughnesses Ra _(C) and Ry _(C) were the same as in Comparative Example 1. Further, the absorption coefficient, thermal conductivity, and thermal expansion coefficient of light having a peak wavelength of 450 nm to 550 nm of the GaN crystal substrate were all the same as those in Comparative Example 1.

  Next, using the GaN crystal substrate obtained in this example, in the same manner as in Comparative Example 1, a semiconductor device was manufactured through a semiconductor laminated wafer and a semiconductor device wafer. The relative light emission intensity at the outer peripheral portion of the semiconductor laminated wafer of this example was as large as 0.26 (that is, the light emission intensity distribution was small). The yield of semiconductor devices was as high as 61%. The results are summarized in Table 1.

In Table 1, when Comparative Example 1 and Examples 1 to 6 are compared, the crystal growth of the GaN crystal substrate in which the warp w _(R) of the back surface, which is the surface opposite to the crystal growth surface, is −50 μm ≦ w ≦ 50 μm. It can be seen that by growing at least one group III nitride crystal layer on the surface side, a semiconductor laminated wafer having a small emission intensity distribution is obtained, and the yield of semiconductor devices is increased.

Further, when Examples 1 and 6 are compared with Examples 2 to 5, warpage w _(R) of the back surface, which is the surface opposite to the crystal growth surface, is −50 μm ≦ w ≦ 50 μm, and surface roughness Ra _{( At} least one group III nitride crystal layer is grown on the crystal growth surface side of the GaN crystal substrate where _R) is Ra _(R) ≦ 10 μm and the surface roughness Ry _{(R) of the} back surface is Ry _(R) ≦ 75 μm. Thus, a semiconductor laminated wafer having a smaller emission intensity distribution is obtained, and it can be seen that the yield of semiconductor devices is further increased.

Furthermore, regarding the plurality of semiconductor devices obtained in the third embodiment, the relationship between the warpage of the back surface of the GaN crystal substrate and the yield of the semiconductor devices is shown in FIG. FIG. 10 includes points for Comparative Example 1 and Examples 1 to 6. As shown in FIG. 10, the yield of the semiconductor device is high when the warp w _(R) of the back surface of the GaN crystal substrate is −50 μm ≦ w _(R) ≦ 50 μm, and the semiconductor is −35 μm ≦ w _(R ≦ 45 μm). The yield of the device has become higher, and the reason why the preferred backside warp region is larger from the negative (−) side to the positive (+) side, as already discussed, is shown in FIG. When the warpage of the back surface 10r is positive (+), a gap 91 in a closed space is formed between the back surface 10r and the surface of the susceptor 9 (see FIG. 1A), and the warpage of the back surface 10r is negative ( In the case of-), an open space void 91 is formed between the back surface 10r and the surface of the susceptor 9, and the thermal distribution of the substrate when the warpage is positive (+) is negative (-). This is considered to be because it becomes smaller than the heat distribution of the substrate.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 GaN crystal, 9 susceptor, 10 GaN crystal substrate, 10c crystal growth surface, 10e, 80e outer periphery, 10p measurement point, 10r back surface, 10u etched portion, 12 substrate support base, 12a non-recessed surface, 12b recessed surface, 12h supported Unit, 13 drive unit, 14 drive unit, 15 laser displacement meter, 16 drive control unit, 17 laser displacement meter control unit, 18 data analysis unit, 20 group III nitride crystal layer, 21 n-type GaN layer, 22 In _0.2 Ga _0.8 N layer, 23 Al _0.2 Ga _0.8 N layer, 24 p-type GaN layer, 31 laser light, 31i incident light, 31r reflected light, 32 position data, 33 displacement value data, 40 warped surface, 50 optimal plane, 80 semiconductor stack Wafer, 81 n-side electrode, 82 p-side electrode, 90 semiconductor device wafer, 91 gap, 99 semiconductor device, 100p Specified arbitrarily Fixed point, 101p, 102p, 103p, 104p, 105p, 106p, 107p, 108p Multiple measurement points close to the arbitrarily specified measurement point, 111p One measurement point from the outer circumference, 112p Two measurement points from the outer circumference Point, 120a Measurement point on the non-recessed surface of the substrate support, 120b Measurement point on the recessed surface of the substrate support.

Claims (11)

With respect to the back surface, which is the surface opposite to the crystal growth surface, the sum of the distance between the largest displacement value and the optimum plane on one side and the distance between the largest displacement value and the optimum plane on the other side is the warped curved surface. The GaN crystal substrate in which the warpage w _(R) per 5.08 cm length of the back surface calculated as follows is −35 μm ≦ w _(R) ≦ 45 μm. 2. The GaN crystal substrate according to claim 1, wherein the surface roughness Ra _{(R) of the} back surface is Ra _(R) ≦ 10 μm. The GaN crystal substrate according to claim 2, wherein the surface roughness Ra _{(R) of the} back surface is Ra _(R) ≧ 1 μm. The GaN crystal substrate according to any one of claims 1 to 3, wherein a surface roughness Ry _{(R) of the} back surface is Ry _(R) ≤ 75 µm. The GaN crystal substrate according to claim 4, wherein the surface roughness Ry _{(R) of the} back surface is Ry _(R) ≧ 3 μm. The warp w _(C) per 5.08 cm length of the crystal growth surface measured by using an optical interference type flat tester is -50 μm ≦ w _(C) ≦ 50 μm. The GaN crystal substrate according to any one of the above. The GaN crystal substrate according to any one of claims 1 to 6, wherein a surface roughness Ra _{(C) of the} crystal growth surface satisfies Ra _(C) ≤ 10 nm. The GaN crystal substrate according to claim 1, wherein a surface roughness Ry _{(C) of the} crystal growth surface is Ry _(C) ≦ 60 nm. A method for producing a GaN crystal substrate according to any one of claims 1 to 8,
Cutting the GaN crystal substrate from the grown GaN crystal and processing the back surface of the GaN crystal substrate,
The method of manufacturing a GaN crystal substrate, wherein the step of processing the back surface of the GaN crystal substrate includes at least one of a step of grinding the back surface, a step of polishing the back surface, and a step of etching the back surface.   A semiconductor device comprising: selecting the GaN crystal substrate according to any one of claims 1 to 8 as a substrate, and growing at least one group III nitride crystal layer on the crystal growth surface side of the GaN crystal substrate Manufacturing method.   A semiconductor device comprising: the GaN crystal substrate according to claim 1; and at least one group III nitride crystal layer formed on the crystal growth surface side of the GaN crystal substrate.

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