CN109148260B - Laser marking method, silicon wafer with laser marking and manufacturing method thereof - Google Patents
Laser marking method, silicon wafer with laser marking and manufacturing method thereof Download PDFInfo
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- CN109148260B CN109148260B CN201810565558.2A CN201810565558A CN109148260B CN 109148260 B CN109148260 B CN 109148260B CN 201810565558 A CN201810565558 A CN 201810565558A CN 109148260 B CN109148260 B CN 109148260B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The invention provides a laser marking method capable of improving the flatness of the outer periphery of a wafer compared with the prior art. In a method of marking a silicon wafer with a laser beam having a plurality of spots, each of the plurality of spots is formed by a 1 st step (step S1) and a 2 nd step (step S2), the 1 st step (step S1) irradiates a laser beam at a predetermined position on an outer peripheral portion of the silicon wafer in a 1 st beam radial direction, and the 2 nd step (step S2) irradiates the laser beam at the predetermined position in a 2 nd beam radial direction smaller than the 1 st beam radial direction.
Description
Technical Field
The present invention relates to a laser marking method, a method for manufacturing a silicon wafer with a laser mark, and a silicon wafer with a laser mark.
Background
Conventionally, a silicon wafer has been widely used as a substrate of a semiconductor device. The silicon wafer was obtained as follows. That is, first, a single crystal silicon ingot grown by a Czochralski (CZ) method or the like is cut into pieces, and the outer peripheral portions of the pieces are ground and sliced.
The silicon wafer obtained by dicing is subjected to chamfering treatment and planarization (polishing) treatment. On the outer peripheral portion of the front surface or the back surface of the silicon wafer subjected to the polishing treatment, an identification symbol (mark) for wafer management or identification may be marked by irradiation with laser light. A mark (hereinafter, referred to as a "laser mark") imprinted by laser light is formed by a character or a symbol formed by a collection of a plurality of recesses (dots), and has a size that can be recognized by a visual sense, a camera, or the like.
By the irradiation of the laser beam, an annular ridge is formed on the periphery of each point. Therefore, at least a region (hereinafter, also referred to as a "laser mark region") of the silicon wafer on which the laser mark is marked is subjected to etching treatment to remove the ridge portion, and then the surface of the silicon wafer is subjected to polishing treatment (for example, refer to patent document 1). Subsequently, the polished silicon wafer is subjected to final cleaning, and then various inspections are performed to leave the wafer satisfying a predetermined quality standard as a product.
In recent years, miniaturization and high integration of semiconductor devices have progressed, and silicon wafers are required to have extremely high flatness. In addition, the device formation region is also widened in the radial direction of the wafer year by year, and high flatness is also required for the outer peripheral portion of the wafer.
One of the indices of flatness of the outer peripheral portion of the wafer is ESFQD (Edge Site Front least sQuares site Deviation, SEMI M67-1109). ESFQD is a sector formed in a peripheral portion of a silicon wafer, and has a value for each part, with respect to a part inner plane in which height data in the sector is calculated by a least square method, which is a reference plane, and a maximum displacement amount from the plane excluding a symbol. Wherein the display includes a symbol.
In the above measurement of ESFQD values, except for the Edge Exclusion area (EE) where no device is formed, EE is currently set to an area 2mm from the outermost periphery of the wafer (hereinafter, also referred to as "ee=2mm").
Patent document 1: japanese patent application laid-open No. 2011-29355.
As described above, there are many cases where ee=2mm is used in the present situation, but in order to form more elements, downsizing of ee=1mm is required. However, as a result of the study by the present inventors, it was found that, in the present situation, when ESFQD is measured under the condition of ee=2 mm, a silicon wafer having high flatness in the wafer outer periphery can be obtained, and when ESFQD is measured under the condition of ee=1 mm, flatness in the wafer outer periphery is significantly deteriorated.
Regarding the deterioration of the flatness of the outer peripheral portion of the wafer, the size of the laser mark region included in the ESFQD measurement region varies due to the change of EE. Therefore, it is predicted that the deterioration of the ESFQD value due to the change of EE is caused by the flatness of the laser marked region.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a laser marking method capable of improving the flatness of the outer peripheral portion of a wafer as compared with the conventional method.
The gist of the present invention for solving the above problems is as follows.
(1) A method of marking a silicon wafer with a laser mark having a plurality of dots, characterized in that each of the plurality of dots is formed by a 1 st step of irradiating a laser beam at a predetermined position in a 1 st radial direction of an outer peripheral portion of the silicon wafer and a 2 nd step of irradiating the laser beam at a 2 nd radial direction smaller than the 1 st radial direction of the predetermined position.
(2) The method for engraving a laser mark according to (1) above, wherein the 1 st beam diameter is more than 100% and 120% or less of the 2 nd beam diameter.
(3) The method for engraving a laser mark according to (1) or (2), wherein the step 2 is performed a plurality of times.
(4) The method for engraving a laser mark according to any one of (1) to (3), wherein the step 1 is performed a plurality of times.
(5) A method of manufacturing a laser marked silicon wafer, comprising: a laser marking imprint process of imprinting a laser mark on a silicon wafer obtained by slicing a single crystal silicon ingot grown by a predetermined method by the imprint method of any one of the above (1) to (4); an etching step of performing etching treatment on at least a laser marked region of the silicon wafer; and a polishing step of polishing the surface of the silicon wafer after the etching step.
(6) A laser marked silicon wafer characterized in that the ESFQD value measured by setting the width of the edge exclusion region to 1mm is 100nm or less.
According to the present invention, the flatness of the outer peripheral portion of the wafer can be improved as compared with the conventional one.
Drawings
Fig. 1 is a flowchart of a method of forming dots in the laser marking imprint method according to the present invention.
Fig. 2 is a diagram illustrating a mechanism for improving the flatness of the outer peripheral portion of a wafer by the present invention.
Fig. 3 is a flow chart of a method of manufacturing a laser marked silicon wafer according to the present invention.
Fig. 4 shows the relationship between the ratio of the diameter of the point after the etching treatment to the diameter of the point in the final product and the height of the ridge on the periphery of the point after the polishing treatment.
Fig. 5 is a graph showing the values of ESFQDs corresponding to inventive example 1 and comparative example.
Detailed Description
(method of engraving laser marking)
Hereinafter, embodiments of the present invention will be described with reference to the drawings. The imprint method of the laser mark according to the present invention is a method of imprinting a laser mark having a plurality of dots to a silicon wafer. As shown in fig. 1, the method for marking a laser mark according to the present invention is characterized in that each of a plurality of dots is formed by a 1 st step (step S1) and a 2 nd step (step S2), wherein the 1 st step (step S1) irradiates laser light at a predetermined position on the outer peripheral portion of a 1 st radial silicon wafer, and the 2 nd step (step S2) irradiates laser light at the predetermined position in a 2 nd radial direction smaller than the 1 st radial direction.
As described above, if ESFQDs were evaluated under ee=1 mm on a silicon wafer having good evaluation results for ESFQDs under ee=2 mm, the evaluation results were significantly worse than those of ee=2 mm.
Since the size of the laser marking region included in the measurement region of the ESFQD varies due to the change of EE, it is considered that the above-described deterioration of the ESFQD is highly likely to be related to the flatness of the laser marking region. Therefore, the present inventors have studied the structure of the laser mark region in detail. The results showed that a bump was formed on the periphery of the dot constituting the laser mark.
As described above, conventionally, after laser marking is performed on the outer peripheral portion of a silicon wafer, a raised portion of molten silicon is formed on the peripheral edge of a dot, and the raised portion is removed by etching treatment, and then the surface of the silicon wafer is polished. Nevertheless, it is known that after the polishing process, a ridge is formed on the peripheral edge of the dot.
The present inventors have made a dedicated study on the cause of forming a ridge portion on the peripheral edge of a spot after the above-described polishing treatment, and as a result, it is considered that there is a possibility that the abrasive grains acting at the peripheral edge of the spot in the polishing treatment are insufficient. That is, the inventors considered that, as shown in fig. 2 (a), if the surface of the silicon wafer W is polished by supplying the polishing slurry between the polishing pad P and the silicon wafer W, the abrasive grains G contained in the polishing slurry fall into the point D, and as a result, the amount of abrasive grains at the peripheral edge of the point D is insufficient. Further, it is presumed that the polishing amount at the peripheral edge of the point D may be reduced from that of the other portions due to the shortage of the abrasive grains, and as shown in fig. 2 (B), the ridge portion B is formed at the peripheral edge of the point D.
Therefore, the present inventors have made a dedicated study on a method of suppressing the formation of the bulge B formed on the peripheral edge of the point D based on the above estimation. As a result, it was found that it is very effective to form each of the plurality of points D by using the 1 st step of irradiating the laser beam at a predetermined position on the outer peripheral portion of the silicon wafer in the 1 st beam diameter direction and the 2 nd step of irradiating the laser beam at the predetermined position in the 2 nd beam diameter direction smaller than the 1 st beam diameter direction.
The mechanism of suppressing the formation of the ridge portion B by forming each of the above-mentioned plural points by laser irradiation in plural stages is not necessarily clear, but the present inventors consider the following. That is, it is considered that the above-described laser irradiation forms a land T on the wall surface defining the point D, and the land T suppresses the drop of the abrasive grains G to the deep position of the point D, thereby increasing the abrasive grains G that remain on the peripheral edge of the point D. The process of forming each of the plurality of points D will be described below.
First, in step S1, laser light is irradiated to a predetermined position on the outer periphery of the silicon wafer at a 1 st beam diameter D1 (1 st step). In step 1, a hole having a 1 st diameter D1 and a 1 st depth D1 is formed at a predetermined position on the outer periphery of the silicon wafer. The holes may be formed in both the front surface and the back surface of the wafer. Further, the 1 st diameter D1 of the hole refers to the diameter on the outermost surface of the wafer. Further, the 1 st depth d1 is a depth from the wafer surface to the deepest portion of the hole.
The silicon wafer may be obtained by subjecting a single crystal silicon ingot grown by a CZ method or a Floating Zone method (Floating Zone) to a known peripheral grinding, slicing, and polishing treatment, and has a predetermined thickness.
The growth of the single-crystal silicon ingot can be performed by appropriately adjusting the oxygen concentration, the carbon concentration, the nitrogen concentration, and the like so that the silicon wafer collected from the grown silicon ingot has desired characteristics. In addition, the conductivity type may be n-type or p-type by adding an appropriate dopant.
As the laser source, for example, an infrared laser or CO can be used 2 Lasers, YLF lasers (solid state lasers). Among them, the use of the YLF laser is preferable because thermal damage can be suppressed low.
The beam diameter of the laser beam irradiated to the silicon wafer can be controlled by the output of the laser beam, and by increasing the output of the laser beam, the beam diameter can be increased. In the present step 1, a hole having a 1 st diameter D1 and a 1 st depth D1 is formed at a predetermined position on the outer peripheral portion of the silicon wafer by irradiating a laser beam with a 1 st beam diameter larger than the 2 nd beam diameter in the step 2 described later.
The depth of the hole formed by irradiation of the laser light 1 time is not dependent on the output of the laser light, but is, for example, about 4 μm, although it is also dependent on the apparatus. When the 1 st hole of the depth d1 cannot be obtained by 1 st laser irradiation, the 1 st hole of the depth d1 can be formed by performing laser irradiation a plurality of times in the 1 st step.
The 1 st depth d1 is a depth at which all the holes formed in the 1 st step are removed after the polishing treatment. The 1 st depth d1 is preferably 5% to 50% with respect to the 2 nd depth d2 of the hole after the 2 nd step, which will be described later. Thus, the formation of the ridge portion at the edge of the dead center can be prevented well for the silicon wafer after the polishing treatment. Here, the 2 nd depth d2 is the depth of the portion of the hole further formed in the hole formed in the 1 st step through the 2 nd step, and is not the depth from the wafer surface.
Next, in step S2, the laser beam is irradiated to the predetermined position, that is, the position where the laser beam was irradiated in step 1, with a 2 nd beam diameter D2 smaller than the 1 st beam diameter (step 2). Thus, the 1 st diameter D1 and the 1 st depth D2 of the holes formed in the 1 st step can be formed to have the 2 nd diameter D2 smaller than the 1 st diameter D1 and the 2 nd depth D2 of the holes, and the lands can be formed on the wall surfaces defining the holes.
The ratio (D1/D2) of the 1 st beam diameter to the 2 nd beam diameter is preferably more than 100% and 120% or less. More preferably 105% to 120%. This can prevent the formation of the ridge formed after the subsequent polishing step.
In this way, a hole having a depth equal to the sum of the 1 st diameter D1 and the 1 st depth D1 and the 2 nd depth D2 can be formed at a predetermined position. In this specification, the hole thus formed is referred to as a "dot". The laser mark can be imprinted by repeating the steps 1 and 2 at other positions to form a plurality of dots.
In the above description, the first step 1 and the second step 2 are performed to form one dot and then form another dot, but the first step 1 may be performed for all dot forming positions and then the second step 2 may be performed.
In the above description, the step 2 is performed after the step 1, but the step 1 may be performed after the step 2. In this case, in step 2, holes having a depth equal to the sum of the 1 st depth D1 and the 2 nd depth D2 are formed, and in step 1, holes having a 1 st diameter D1 and a 1 st depth D1 larger than the 2 nd diameter D2 are formed in holes having a 2 nd diameter D2 and a depth d1+d2.
The silicon wafer imprinted with the laser mark as described above is then supplied to an etching process and a polishing process. By these etching step and polishing step, the surface portion of the silicon wafer including the inside of the dots constituting the laser mark is removed. That is, the diameter and depth of each point become large by the etching treatment, and at least the portion of the hole formed in step 1 is completely removed. Thus, in the steps 1 and 2, the beam diameter and the depth of the hole to be provided in each step are appropriately set so that the silicon wafer after the polishing step can be laser marked with a plurality of points having the diameter in the final product and the depth in the final product.
(method for producing silicon wafer with laser marking)
Next, a method for manufacturing a silicon wafer with laser marking according to the present invention will be described. Fig. 3 shows a flow chart of a method for producing a silicon wafer with laser marking by means of the invention. As shown in the figure, the present invention is characterized by comprising: a laser marking imprint step (step S11) of imprinting a laser mark on a silicon wafer obtained by slicing a single crystal silicon ingot grown by a predetermined method by the above-described imprint method of the laser mark by the present invention; an etching step (step S12) of performing etching treatment on at least a region of the silicon wafer on which the laser mark is imprinted; and a polishing step (step S13) of polishing the surface of the silicon wafer after the etching step.
The laser marking imprint process of step S11 is the same as the process performed by the imprint method of laser marking by the present invention described above, and therefore, the description thereof is omitted. By the laser marking step, even when the etching margin in the etching step of step S12 described later is small, the formation of the ridge portion on the dot periphery after the polishing step of step S13 can be suppressed.
After the laser mark imprinting step, in step S12, etching treatment (etching step) is performed on at least the laser mark imprinted region of the silicon wafer. In the etching step, the bump formed at the peripheral edge of the dot is removed by irradiation with the laser light in step S11. Further, the strain generated in the silicon wafer by the polishing process can be removed by the etching step.
As an example of the method of the etching step, a method of immersing the silicon wafer after the laser mark is etched in an etching liquid filled in an etching bath, holding the wafer, and etching the wafer while rotating the wafer is given.
As the etching liquid, an alkaline etching liquid is preferably used, and an etching liquid composed of an aqueous solution of sodium hydroxide or potassium hydroxide is more preferably used. By this etching step, the ridge portion forming the periphery of the laser marked dot portion can be removed, and the strain generated on the silicon wafer by the polishing process can be removed.
After the etching step, in step S13, a polishing process (polishing step) is performed on the surface of the silicon wafer after the etching step. In the present polishing step, both sides of the etched wafer are polished using a polishing slurry having abrasive grains.
The polishing process first embeds a silicon wafer into a carrier, and clamps the wafer with an upper platen and a lower platen to which polishing cloth is attached. For example, slurry such as colloidal silica is flowed between the upper and lower stages and the wafer, and the upper and lower stages and the carrier are rotated in opposite directions to each other, and mirror polishing is performed on both surfaces of the silicon wafer. Thus, the roughness of the wafer surface can be reduced, and a wafer having high flatness can be obtained.
Specifically, as the polishing slurry, an alkaline slurry containing colloidal silica as polishing abrasive grains is used.
After the above polishing process, single-sided finish polishing is performed, which finish-polishes at least one side of the silicon wafer one-sided at a time. The finish polishing includes both single-sided polishing and double-sided polishing. In the case of polishing both surfaces, one surface is polished and then the other surface is polished.
Then, after the finish polishing treatment, the silicon wafer subjected to the polishing treatment is cleaned. Specifically, for example, the SC-1 cleaning solution, which is a mixture of ammonia water, hydrogen peroxide water and water, and the SC-2 cleaning solution, which is a mixture of hydrochloric acid, hydrogen peroxide water and water, are used to remove particulate matter, organic matter, metal, and the like on the wafer surface.
Finally, the flatness of the silicon wafer after being cleaned, the number of LPDs on the wafer surface, damage, contamination of the wafer surface, and the like are inspected. Only silicon wafers satisfying the predetermined quality in the inspection are shipped as products.
In this way, a silicon wafer with laser marks having a higher flatness of the outer peripheral portion than conventional can be manufactured.
(silicon wafer with laser marking)
Next, a silicon wafer with laser marking according to the present invention will be described. The laser-marked silicon wafer according to the present invention is a laser-marked silicon wafer manufactured by the above-described method for manufacturing a laser-marked silicon wafer.
As described above, in the laser marking step 11, the formation of the ridge portion at the point periphery constituting the laser mark can be suppressed. As a result, the laser-marked silicon wafer according to the present invention has a higher flatness of the outer peripheral portion than in the past. Specifically, the ESFQD value measured under the condition of ee=1 mm is 100nm or less.
Examples (example)
Hereinafter, specific examples and comparative examples will be described, but the present invention is not limited to these examples.
(inventive example 1)
According to the flowchart shown in FIG. 3, a silicon wafer with laser mark composed of a plurality of points having a diameter of 100 μm and a depth of 55 μm was produced. Specifically, a single crystal silicon ingot having a diameter of 300mm grown by the CZ method is cut into pieces, and the outer periphery is ground and then sliced to obtain a silicon wafer. Laser marks are marked on the outer periphery of the back surface of the obtained silicon wafer. Specifically, a YFL laser was used as a laser source, and the laser was irradiated seven times at 3500 μj as the 1 st step, and then irradiated seven times at 1500 μj as the 2 nd step. The diameter (1 st diameter) of the hole formed by the laser irradiation in the 1 st step was 115. Mu.m, the depth was 4. Mu.m, and the diameter (2 nd diameter) of the hole formed by the laser irradiation in the 2 nd step was 88. Mu.m, the depth was 4. Mu.m. This is a condition in which the diameter of the spot becomes 100 μm after the subsequent polishing treatment.
Next, the laser marked silicon wafer is subjected to etching treatment. Specifically, an aqueous potassium hydroxide solution was used as the etching solution, and the machining allowance was about 2.5 μm on one surface.
Then, the silicon wafer subjected to the etching treatment is subjected to a double-sided polishing treatment. Specifically, a silicon wafer subjected to etching treatment is set in a carrier, the wafer is sandwiched between an upper platen and a lower platen to which a polishing cloth is attached, an alkaline polishing slurry containing colloidal silica is flowed between the upper platen and the lower platen and the wafer, the upper platen, the lower platen and the carrier are rotated in opposite directions, and mirror polishing treatment is performed on both surfaces of the silicon wafer. The machining allowance in the double-sided polishing treatment was about 5 μm on one side.
Next, after the silicon wafer subjected to the above polishing treatment is subjected to finish polishing, cleaning is performed to obtain a silicon wafer with laser marking according to the present invention. Five silicon wafers with laser marks were produced under the same conditions.
Comparative example
A silicon wafer with laser marking was obtained in the same manner as in inventive example 1. However, each of the plurality of dots constituting the laser mark was formed by irradiating ten-four times laser light with an output of 1500 μj. At this time, the diameter of the hole formed by each laser irradiation was 88. Mu.m, and the depth was 4. Mu.m. This is a condition in which the diameter of the spot becomes 100 μm after the subsequent polishing treatment. Five silicon wafers with laser marks were produced under the same conditions.
(inventive example 2)
A silicon wafer with a laser mark was produced in the same manner as in inventive example 1. However, in the laser marking step, the laser beam is output at 2700 μj in step 1, and at 1500 μj in step 2. Other conditions were the same as in inventive example 1, except that one wafer was produced. The diameter (1 st diameter) of the hole formed by the laser irradiation in the 1 st step was 107. Mu.m, the depth was 4. Mu.m, and the diameter (2 nd diameter) of the hole formed by the laser irradiation in the 2 nd step was 88. Mu.m, the depth was 4. Mu.m. This is a condition in which the diameter of the spot becomes 100 μm after the subsequent polishing treatment.
Inventive example 3
A silicon wafer with a laser mark was produced in the same manner as in inventive example 1. However, in the laser marking step, the output of the laser beam was 3900 μj in step 1, and the output of the laser beam was 1500 μj in step 2. The other conditions were the same as in inventive example 1, except that the diameter (1 st diameter) of the hole formed by the laser irradiation in the above 1 st step was 126. Mu.m, the depth was 4. Mu.m, and the diameter (2 nd diameter) of the hole formed by the laser irradiation in the 2 nd step was 88. Mu.m, the depth was 4. Mu.m. This is a condition in which the diameter of the spot becomes 100 μm after the subsequent polishing treatment.
< measurement of height of bump >
The heights of the bumps formed on the peripheral edges of the points constituting the laser marks were measured for the laser-marked silicon wafers obtained by the above examples and comparative examples. Specifically, the heights of the peripheral edge portions of all the points were measured using a measuring device (manufactured by KLA-Tencor Co., ltd., wafer sight 2), and the average value was obtained.
Fig. 4 shows the relationship between the ratio of the diameter of the point after the etching treatment (i.e., the 1 st diameter enlarged by the etching treatment) to the diameter of the point on the final product, i.e., 100 μm, and the height of the ridge portion at the periphery of the point after the polishing treatment step. In the comparative example, data are expressed in consideration of the fact that 14 laser shots are divided into 2 steps and the beam diameters are the same in the two steps (that is, d1=d2). As is clear from fig. 4, in the comparative example, the ridge having a height exceeding 60nm was formed on the peripheral edge of the dot, whereas the formation of the ridge was prevented in all of the wafers obtained by means of the invention examples 1 to 4. In addition, while the height of the ridge is zero in invention examples 2 and 3, and the height of the ridge is-20 nm or less in invention example 1 and the periphery of the spot is recessed, the value of ESFQR is 100nm or less in invention example 1 and there is no problem in flatness of the outer periphery of the wafer as will be described later.
< measurement of ESFQD >
ESFQDs of the laser-marked silicon wafers obtained in the above invention example 1 and comparative example were measured. Specifically, the measurement was performed using a measuring device (WaferSight 2, manufactured by KLA-Tencor Co., ltd.) with a sector number of 20, a sector length of 10mm, and an edge exclusion area of 1 mm.
Fig. 5 shows ESFQD values of laser-marked silicon wafers obtained in inventive example 1 and comparative example. For reference, a reference example of measuring ESFQD at ee=2mm is also shown with respect to the comparative example. In addition, the values in fig. 5 represent values concerning the sector where the laser mark is formed. As is clear from the graph, the value of ESFQD was significantly lower than 100nm for the wafer of invention example 1, whereas the value of ESFQD was greater than that of the reference example by more than 100nm for the wafer of comparative example.
Industrial applicability
According to the present invention, a silicon wafer with laser marks having a higher flatness of the outer peripheral portion than conventional silicon wafers can be obtained, and therefore, the present invention is useful in the semiconductor industry.
Description of the reference numerals
B bump
Point D (concave)
G abrasive particles
P polishing pad
W silicon wafer.
Claims (5)
1. A laser marking imprint method of imprinting a laser mark having a plurality of points to a silicon wafer before an etching process in a silicon wafer manufacturing process, the laser marking imprint method characterized in that,
each of the plurality of points is formed by a 1 st step of irradiating a laser beam at a predetermined position on an outer peripheral portion of the silicon wafer in a 1 st beam diameter direction, and a 2 nd step of irradiating the laser beam at the predetermined position in a 2 nd beam diameter direction smaller than the 1 st beam diameter direction.
2. The method of marking by laser light according to claim 1,
the 1 st beam diameter is more than 100% and 120% or less of the 2 nd beam diameter.
3. A laser marking method as claimed in claim 1 or 2, characterized in that,
the step 1 is performed by a plurality of laser shots.
4. A laser marking method as claimed in claim 1 or 2, characterized in that,
the step 2 is performed by a plurality of laser shots.
5. A method for manufacturing a silicon wafer with laser marking, the method being characterized by comprising:
a laser marking imprint process of imprinting a silicon wafer obtained by slicing a single crystal silicon ingot grown by a predetermined method with the laser marking imprint method according to any one of claims 1 to 4;
an etching step of performing etching treatment on at least a region of the silicon wafer where the laser mark is imprinted; and
and a polishing step of polishing the surface of the silicon wafer after the etching step.
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Also Published As
| Publication number | Publication date |
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| JP6855955B2 (en) | 2021-04-07 |
| CN109148260A (en) | 2019-01-04 |
| JP2019000888A (en) | 2019-01-10 |
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