JP2009111228A5 - - Google Patents
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- Publication number
- JP2009111228A5 JP2009111228A5 JP2007283156A JP2007283156A JP2009111228A5 JP 2009111228 A5 JP2009111228 A5 JP 2009111228A5 JP 2007283156 A JP2007283156 A JP 2007283156A JP 2007283156 A JP2007283156 A JP 2007283156A JP 2009111228 A5 JP2009111228 A5 JP 2009111228A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- order mode
- semiconductor laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000005253 cladding Methods 0.000 claims 4
- 230000003287 optical effect Effects 0.000 claims 3
- 238000010521 absorption reaction Methods 0.000 claims 2
- 230000010355 oscillation Effects 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007283156A JP2009111228A (ja) | 2007-10-31 | 2007-10-31 | 半導体レーザ装置 |
| US12/261,499 US20090122824A1 (en) | 2007-10-31 | 2008-10-30 | Semiconductor laser apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007283156A JP2009111228A (ja) | 2007-10-31 | 2007-10-31 | 半導体レーザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009111228A JP2009111228A (ja) | 2009-05-21 |
| JP2009111228A5 true JP2009111228A5 (cg-RX-API-DMAC7.html) | 2009-07-23 |
Family
ID=40623661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007283156A Pending JP2009111228A (ja) | 2007-10-31 | 2007-10-31 | 半導体レーザ装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20090122824A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2009111228A (cg-RX-API-DMAC7.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010278278A (ja) * | 2009-05-29 | 2010-12-09 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
| JP5998701B2 (ja) * | 2012-07-23 | 2016-09-28 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| CN104300367B (zh) * | 2014-10-21 | 2017-09-26 | 中国科学院半导体研究所 | 抑制GaAs基激光器高阶模的方法 |
| US11431149B1 (en) * | 2019-03-22 | 2022-08-30 | Freedom Photonics Llc | Single mode laser with large optical mode size |
| WO2026079614A1 (ko) * | 2024-10-10 | 2026-04-16 | 엘지이노텍 주식회사 | 광 흡수 금속층을 포함하는 large optical cavity 구조를 갖는 레이저 다이오드 장치 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3754226B2 (ja) * | 1999-03-25 | 2006-03-08 | 三洋電機株式会社 | 半導体発光素子 |
| EP1143582B1 (en) * | 1999-09-29 | 2003-03-19 | The Furukawa Electric Co., Ltd. | Gain-coupled distributed feedback semiconductor laser |
-
2007
- 2007-10-31 JP JP2007283156A patent/JP2009111228A/ja active Pending
-
2008
- 2008-10-30 US US12/261,499 patent/US20090122824A1/en not_active Abandoned