JP2009108162A - Resin composition and semiconductor device produced using the same - Google Patents
Resin composition and semiconductor device produced using the same Download PDFInfo
- Publication number
- JP2009108162A JP2009108162A JP2007280696A JP2007280696A JP2009108162A JP 2009108162 A JP2009108162 A JP 2009108162A JP 2007280696 A JP2007280696 A JP 2007280696A JP 2007280696 A JP2007280696 A JP 2007280696A JP 2009108162 A JP2009108162 A JP 2009108162A
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- JP
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- Prior art keywords
- compound
- meth
- acrylate
- resin composition
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000011342 resin composition Substances 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 150000001875 compounds Chemical class 0.000 claims abstract description 80
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 239000011347 resin Substances 0.000 claims abstract description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 125000005370 alkoxysilyl group Chemical group 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 12
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 239000004925 Acrylic resin Substances 0.000 claims description 7
- 229920000178 Acrylic resin Polymers 0.000 claims description 7
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 abstract description 10
- 230000001070 adhesive effect Effects 0.000 abstract description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 78
- -1 4-cyanatophenyl Chemical group 0.000 description 52
- 238000006243 chemical reaction Methods 0.000 description 21
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 15
- 238000003860 storage Methods 0.000 description 13
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 11
- 238000002156 mixing Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 8
- 229920005862 polyol Polymers 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 150000003077 polyols Chemical class 0.000 description 7
- DRBNNXKDUBUOFD-UHFFFAOYSA-N 2-methylprop-2-enoyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OC(=O)C(C)=C DRBNNXKDUBUOFD-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229920002857 polybutadiene Polymers 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- 239000005062 Polybutadiene Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 229920000570 polyether Polymers 0.000 description 4
- 239000003505 polymerization initiator Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 229920000459 Nitrile rubber Polymers 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 3
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 description 3
- 229920001515 polyalkylene glycol Polymers 0.000 description 3
- 229920000193 polymethacrylate Polymers 0.000 description 3
- 239000007870 radical polymerization initiator Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 125000004434 sulfur atom Chemical group 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- NQRACKNXKKOCJY-UHFFFAOYSA-N trimethoxy-[3-(3-trimethoxysilylpropyldisulfanyl)propyl]silane Chemical compound CO[Si](OC)(OC)CCCSSCCC[Si](OC)(OC)OC NQRACKNXKKOCJY-UHFFFAOYSA-N 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- NOBYOEQUFMGXBP-UHFFFAOYSA-N (4-tert-butylcyclohexyl) (4-tert-butylcyclohexyl)oxycarbonyloxy carbonate Chemical compound C1CC(C(C)(C)C)CCC1OC(=O)OOC(=O)OC1CCC(C(C)(C)C)CC1 NOBYOEQUFMGXBP-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 2
- CUFXMPWHOWYNSO-UHFFFAOYSA-N 2-[(4-methylphenoxy)methyl]oxirane Chemical compound C1=CC(C)=CC=C1OCC1OC1 CUFXMPWHOWYNSO-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- ZLWGDCZQSWUXRV-UHFFFAOYSA-N 6-ethenyl-1h-triazine-2,4-diamine Chemical compound NN1NC(C=C)=CC(N)=N1 ZLWGDCZQSWUXRV-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 2
- URLYGBGJPQYXBN-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methyl prop-2-enoate Chemical compound OCC1CCC(COC(=O)C=C)CC1 URLYGBGJPQYXBN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- QYQADNCHXSEGJT-UHFFFAOYSA-N cyclohexane-1,1-dicarboxylate;hydron Chemical compound OC(=O)C1(C(O)=O)CCCCC1 QYQADNCHXSEGJT-UHFFFAOYSA-N 0.000 description 2
- PFURGBBHAOXLIO-UHFFFAOYSA-N cyclohexane-1,2-diol Chemical compound OC1CCCCC1O PFURGBBHAOXLIO-UHFFFAOYSA-N 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920005906 polyester polyol Polymers 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- FBBATURSCRIBHN-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyldisulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSCCC[Si](OCC)(OCC)OCC FBBATURSCRIBHN-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- JXCAHDJDIAQCJO-UHFFFAOYSA-N (1-tert-butylperoxy-2-ethylhexyl) hydrogen carbonate Chemical compound CCCCC(CC)C(OC(O)=O)OOC(C)(C)C JXCAHDJDIAQCJO-UHFFFAOYSA-N 0.000 description 1
- DEQUKPCANKRTPZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1O DEQUKPCANKRTPZ-UHFFFAOYSA-N 0.000 description 1
- FVQMJJQUGGVLEP-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOOC(C)(C)C FVQMJJQUGGVLEP-UHFFFAOYSA-N 0.000 description 1
- HCXVPNKIBYLBIT-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 3,5,5-trimethylhexaneperoxoate Chemical compound CC(C)(C)CC(C)CC(=O)OOOC(C)(C)C HCXVPNKIBYLBIT-UHFFFAOYSA-N 0.000 description 1
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 description 1
- MYOQALXKVOJACM-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy pentaneperoxoate Chemical compound CCCCC(=O)OOOC(C)(C)C MYOQALXKVOJACM-UHFFFAOYSA-N 0.000 description 1
- UFKLQICEQCIWNE-UHFFFAOYSA-N (3,5-dicyanatophenyl) cyanate Chemical compound N#COC1=CC(OC#N)=CC(OC#N)=C1 UFKLQICEQCIWNE-UHFFFAOYSA-N 0.000 description 1
- YDCUTCGACVVRIQ-UHFFFAOYSA-N (3,6-dicyanatonaphthalen-1-yl) cyanate Chemical compound N#COC1=CC(OC#N)=CC2=CC(OC#N)=CC=C21 YDCUTCGACVVRIQ-UHFFFAOYSA-N 0.000 description 1
- UMDBGQBQDICTJC-UHFFFAOYSA-N (3-cyanatonaphthalen-1-yl) cyanate Chemical compound C1=CC=CC2=CC(OC#N)=CC(OC#N)=C21 UMDBGQBQDICTJC-UHFFFAOYSA-N 0.000 description 1
- QQZZMAPJAKOSNG-UHFFFAOYSA-N (3-cyanatophenyl) cyanate Chemical compound N#COC1=CC=CC(OC#N)=C1 QQZZMAPJAKOSNG-UHFFFAOYSA-N 0.000 description 1
- ZORJPNCZZRLEDF-UHFFFAOYSA-N (3-methoxy-3-methylbutoxy)carbonyloxy (3-methoxy-3-methylbutyl) carbonate Chemical compound COC(C)(C)CCOC(=O)OOC(=O)OCCC(C)(C)OC ZORJPNCZZRLEDF-UHFFFAOYSA-N 0.000 description 1
- NLBJAOHLJABDAU-UHFFFAOYSA-N (3-methylbenzoyl) 3-methylbenzenecarboperoxoate Chemical compound CC1=CC=CC(C(=O)OOC(=O)C=2C=C(C)C=CC=2)=C1 NLBJAOHLJABDAU-UHFFFAOYSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- KUYRCFRAGLLTPO-UHFFFAOYSA-N (4-cyanatonaphthalen-1-yl) cyanate Chemical compound C1=CC=C2C(OC#N)=CC=C(OC#N)C2=C1 KUYRCFRAGLLTPO-UHFFFAOYSA-N 0.000 description 1
- GUGZCSAPOLLKNG-UHFFFAOYSA-N (4-cyanatophenyl) cyanate Chemical compound N#COC1=CC=C(OC#N)C=C1 GUGZCSAPOLLKNG-UHFFFAOYSA-N 0.000 description 1
- RIPYNJLMMFGZSX-UHFFFAOYSA-N (5-benzoylperoxy-2,5-dimethylhexan-2-yl) benzenecarboperoxoate Chemical compound C=1C=CC=CC=1C(=O)OOC(C)(C)CCC(C)(C)OOC(=O)C1=CC=CC=C1 RIPYNJLMMFGZSX-UHFFFAOYSA-N 0.000 description 1
- CQXJSKSVSXZXRU-UHFFFAOYSA-N (5-cyanatonaphthalen-2-yl) cyanate Chemical compound N#COC1=CC=CC2=CC(OC#N)=CC=C21 CQXJSKSVSXZXRU-UHFFFAOYSA-N 0.000 description 1
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- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
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- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- QQVIHTHCMHWDBS-UHFFFAOYSA-L isophthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC(C([O-])=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-L 0.000 description 1
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- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
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- 239000000178 monomer Substances 0.000 description 1
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- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
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- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical class CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- SRSFOMHQIATOFV-UHFFFAOYSA-N octanoyl octaneperoxoate Chemical compound CCCCCCCC(=O)OOC(=O)CCCCCCC SRSFOMHQIATOFV-UHFFFAOYSA-N 0.000 description 1
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- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000005007 perfluorooctyl group Chemical group FC(C(C(C(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- CCDXIADKBDSBJU-UHFFFAOYSA-N phenylmethanetriol Chemical group OC(O)(O)C1=CC=CC=C1 CCDXIADKBDSBJU-UHFFFAOYSA-N 0.000 description 1
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- BWJUFXUULUEGMA-UHFFFAOYSA-N propan-2-yl propan-2-yloxycarbonyloxy carbonate Chemical compound CC(C)OC(=O)OOC(=O)OC(C)C BWJUFXUULUEGMA-UHFFFAOYSA-N 0.000 description 1
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- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical class [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- NMOALOSNPWTWRH-UHFFFAOYSA-N tert-butyl 7,7-dimethyloctaneperoxoate Chemical compound CC(C)(C)CCCCCC(=O)OOC(C)(C)C NMOALOSNPWTWRH-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- JUAHKSBERRLSHD-UHFFFAOYSA-N tetraphenyl-$l^{5}-phosphane Chemical class C1=CC=CC=C1P(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 JUAHKSBERRLSHD-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- ATYIZISYPACGCO-UHFFFAOYSA-N tributoxy-[3-(3-tributoxysilylpropyldisulfanyl)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCSSCCC[Si](OCCCC)(OCCCC)OCCCC ATYIZISYPACGCO-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005829 trimerization reaction Methods 0.000 description 1
- JTTSZDBCLAKKAY-UHFFFAOYSA-N trimethoxy-[3-(3-trimethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CO[Si](OC)(OC)CCCSSSSCCC[Si](OC)(OC)OC JTTSZDBCLAKKAY-UHFFFAOYSA-N 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
本発明は、樹脂組成物及び樹脂組成物を使用して作製した半導体装置に関するものである。 The present invention relates to a resin composition and a semiconductor device manufactured using the resin composition.
近年、半導体デバイスの高速化は著しく、多層配線部における配線抵抗と配線間の寄生容量に起因する信号伝搬速度の低下による伝送遅延が問題となってきている。こうした問題は、半導体デバイスの高集積化に伴う配線幅及び配線間隔の微細化につれて配線抵抗が上昇しかつ寄生容量が増大するので、益々顕著となる傾向にある。そこで、配線抵抗及び寄生容量の増大に基づく信号遅延を防止するために、従来のアルミニウム配線に代わり銅配線の導入が行われると共に、層間絶縁膜に比誘電率が二酸化シリコン膜の3.9より小さい低誘電率の絶縁膜の適用が行われている。特に設計基準が65nmから45nmへと構成素子の微細化が進む中で層間絶縁膜の比誘電率は2.0程度またはそれ以下の値が強く求められ、このために層間絶縁膜として膜内部の空孔率を高めることで比誘電率を小さくした多孔質絶縁膜が必要になってきている。
このような多孔質絶縁膜は、その構造上一般的に機械的強度か弱いという問題がある。すなわち従来の絶縁膜を使用した半導体素子に比較して外部からのストレスに対して敏感で、これまで問題とされなかったストレスでも絶縁膜の破壊に至る場合がある。
そこで発生するストレスを少なくするために、封止材料、ダイアタッチ材料などの半導体構成材料に対して低応力性のものが要求されると共に、半導体生産プロセスの見直しも行われている。
半導体素子をリードフレーム、有機基板などの支持体に接着するダイアタッチプロセスにおいては、ダイアタッチ後に半導体素子と支持体の熱膨張率の異なりに基づく反りが発生するが、過度の反りは層間絶縁膜のダメージの原因となるため、反りの小さいダイアタッチ材料が求められると共に低温で硬化することが可能な硬化性に優れる材料が求められている。(例えば、特許文献1参照。)
一般に低温での硬化性をよくすると室温での粘度上昇も短時間でおこり、またワイヤボンド時、半田リフロー時などの高温プロセス下での接着力が低下するといった傾向があった。
Such a porous insulating film generally has a problem that its mechanical strength is weak because of its structure. That is, compared with a semiconductor element using a conventional insulating film, it is more sensitive to external stress, and the insulating film may be destroyed even by stress that has not been a problem until now.
In order to reduce the stress generated there, semiconductor constituent materials such as sealing materials and die attach materials are required to have low stress, and the semiconductor production process has been reviewed.
In a die attach process in which a semiconductor element is bonded to a support such as a lead frame or an organic substrate, warpage occurs due to the difference in thermal expansion coefficient between the semiconductor element and the support after die attach. Therefore, a die attach material having a small warpage is required and a material having excellent curability that can be cured at a low temperature is required. (For example, refer to
In general, when the curability at low temperature is improved, the viscosity at room temperature increases in a short time, and the adhesive force tends to decrease under high temperature processes such as wire bonding and solder reflow.
本発明は、十分な低応力性を有しながら高温での接着性及び室温での保存性に優れる樹脂組成物並びに該樹脂組成物を半導体用ダイアタッチペーストまたは放熱部材接着用材料として使用することで信頼性に優れた半導体装置を提供することである。 The present invention uses a resin composition having excellent low-stress properties and excellent adhesiveness at high temperatures and storage stability at room temperature, and using the resin composition as a die attach paste for semiconductors or a material for adhering heat dissipation members And providing a semiconductor device with excellent reliability.
このような目的は、下記[1]〜[3]に記載の本発明により達成される。
[1](A)銀粉、(B)熱硬化性樹脂、(C)少なくとも1つの一般式(1)で示される結合と少なくとも1つのアルコキシシリル基を有する化合物を含む樹脂組成物であって、前記少なくとも1つの一般式(1)で示される結合と少なくとも1つのアルコキシシリル基を有する化合物(C)の50%以上が一般式(1)におけるnが2である化合物であることを特徴とする樹脂組成物。
Such an object is achieved by the present invention described in the following [1] to [3].
[1] A resin composition comprising (A) silver powder, (B) a thermosetting resin, (C) a compound having at least one bond represented by the general formula (1) and at least one alkoxysilyl group, 50% or more of the compound (C) having at least one bond represented by the general formula (1) and at least one alkoxysilyl group is a compound in which n in the general formula (1) is 2. Resin composition.
−(S)n− (1)
nは1〜10の整数
-(S) n- (1)
n is an integer from 1 to 10
[2]前記化合物(C)に含まれる一般式(1)におけるnが4以上である化合物が、化合物(C)に対して20%以下である前記[1]項記載の樹脂組成物。
[3]前記熱硬化性樹脂(B)が、シアネート樹脂、エポキシ樹脂、ラジカル重合性のアクリル樹脂、マレイミド樹脂のいずれかを含むことを特徴とする前記[1]項記載の樹脂組成物。
[4]前記[1]〜[3]項のいずれか1項に記載の樹脂組成物を半導体用ダイアタッチペーストまたは放熱部材接着用材料として用いて作製したことを特徴とする半導体装置。
[2] The resin composition according to the above [1], wherein the compound represented by the general formula (1) contained in the compound (C) has a compound having n of 4 or more in an amount of 20% or less with respect to the compound (C).
[3] The resin composition as described in [1] above, wherein the thermosetting resin (B) contains any of a cyanate resin, an epoxy resin, a radical polymerizable acrylic resin, and a maleimide resin.
[4] A semiconductor device produced by using the resin composition according to any one of [1] to [3] above as a die attach paste for a semiconductor or a material for adhering a heat dissipation member.
本発明の樹脂組成物は、良好な低応力性及び良好な高温での接着性を有しながら室温での保存性にも優れるため、ダイアタッチペーストまたは放熱部材接着用材料として使用した場合、半導体素子のダメージが少なくまた得られた半導体装置は耐リフロー性に優れており、その結果高信頼性の半導体装置を得ることができる。 Since the resin composition of the present invention has excellent low-stress properties and good adhesiveness at high temperatures, it also has excellent storage stability at room temperature. Therefore, when used as a die attach paste or a material for adhering heat dissipation members, a semiconductor The obtained semiconductor device has little element damage and has excellent reflow resistance. As a result, a highly reliable semiconductor device can be obtained.
本発明は、銀粉、熱硬化性樹脂、少なくとも1つの一般式(1)で示される結合と少なくとも1つのアルコキシシリル基を有する化合物を含む樹脂組成物であって、前記少なくとも1つの一般式(1)で示される結合と少なくとも1つのアルコキシシリル基を有する化合物の50%以上が一般式(1)におけるnが2である化合物であることを特徴とする樹脂組成物で特に低温硬化性と室温での保存性に優れ、高接着性かつ弾性率が低く応力緩和特性に優れる樹脂組成物を提供するものである。ここで、支持体とは、半導体素子を接着する場合は、リードフレーム、有機基板などであり、放熱部材を接着する場合は、半導体素子、リードフレーム、有機基板、半導体製品などが挙げられるが、これらに限定されるものではない。 The present invention is a resin composition comprising silver powder, a thermosetting resin, a compound having at least one bond represented by the general formula (1) and at least one alkoxysilyl group, wherein the at least one general formula (1 ) And a compound having at least one alkoxysilyl group and 50% or more of the compound is a compound in which n in the general formula (1) is 2, particularly at low temperature curability and at room temperature. The present invention provides a resin composition having excellent storage stability, high adhesion, low elastic modulus and excellent stress relaxation properties. Here, the support is a lead frame, an organic substrate or the like when bonding a semiconductor element, and a semiconductor element, a lead frame, an organic substrate, a semiconductor product, or the like when bonding a heat dissipation member, It is not limited to these.
−(S)n− (1)
nは1〜10の整数
-(S) n- (1)
n is an integer from 1 to 10
以下、本発明について詳細に説明する。
本発明に用いる銀粉(A)は、純銀または銀合金の微粉末である。銀合金としては銀を50重量%以上、好ましくは70重量%以上含有する銀−銅合金、銀−パラジウム合金、銀−錫合金、銀−亜鉛合金、銀−マグネシウム合金、銀−ニッケル合金などが挙げられる。銀が好ましいのは良好な導電性、熱伝導性を有する上に酸化されにくく加工性にも優れるからである。また後述する化合物(C)と反応可能で樹脂組成物を硬化した場合に良好な機械的特性を示すからである。
通常電子材料用として市販されている銀粉であれば、還元粉、アトマイズ粉などが入手可能で、好ましい粒径としては平均粒径が0.5μm以上、30μm以下である。より好ましい平均粒径は1μm以上、10μm以下である。下限値以下では樹脂組成物の粘度が高くなりすぎ、上限値以上ではディスペンス時にノズル詰まりの原因となりうるからであり、電子材料用以外の銀粉ではイオン性不純物の量が多い場合があるので注意が必要である。必要により平均粒径が1μm以下の金属粉との併用も可能である。
銀粉(A)の形状としては、フレーク状、球状など特に限定されないが、好ましくはフレーク状のものを使用し、通常樹脂組成物中70重量%以上、95重量%以下含まれる。銀粉の割合が下限値より少ない場合には導電性が悪化し、上限値より多い場合には樹脂組成物の粘度が高くなりすぎるためである。
Hereinafter, the present invention will be described in detail.
The silver powder (A) used in the present invention is a fine powder of pure silver or a silver alloy. Examples of the silver alloy include silver-copper alloy, silver-palladium alloy, silver-tin alloy, silver-zinc alloy, silver-magnesium alloy, silver-nickel alloy containing 50% by weight or more, preferably 70% by weight or more of silver. Can be mentioned. Silver is preferable because it has good electrical conductivity and thermal conductivity, and is difficult to be oxidized and has excellent workability. Moreover, it is because it can react with the compound (C) mentioned later and shows favorable mechanical characteristics when the resin composition is cured.
If it is the silver powder normally marketed for electronic materials, reduced powder, atomized powder, etc. can be obtained, and an average particle diameter is 0.5 micrometer or more and 30 micrometers or less as a preferable particle size. A more preferable average particle diameter is 1 μm or more and 10 μm or less. This is because the viscosity of the resin composition becomes too high below the lower limit value, and may cause nozzle clogging at the upper limit value or more, and silver powder other than for electronic materials may have a large amount of ionic impurities. is necessary. If necessary, it can be used in combination with metal powder having an average particle size of 1 μm or less.
The shape of the silver powder (A) is not particularly limited, such as a flaky shape or a spherical shape, but a flaky shape is preferably used, and is usually contained in an amount of 70% by weight to 95% by weight in the resin composition. This is because when the proportion of silver powder is less than the lower limit, the conductivity deteriorates, and when it is higher than the upper limit, the viscosity of the resin composition becomes too high.
本発明に用いる熱硬化性樹脂(B)とは、加熱により3次元的網目構造を形成し、硬化する樹脂で、樹脂、硬化剤、硬化促進剤などを含む一般的な熱硬化性樹脂であり、特に限定されるものではないが、ペーストを形成する材料であることから室温で液状であることが望ましい。例えば、シアネート樹脂、エポキシ樹脂、ラジカル重合性のアクリル樹脂、マレイミド樹脂などが挙げられる。 The thermosetting resin (B) used in the present invention is a resin that forms and cures a three-dimensional network structure by heating, and is a general thermosetting resin containing a resin, a curing agent, a curing accelerator, and the like. Although it is not particularly limited, since it is a material for forming a paste, it is preferably liquid at room temperature. For example, cyanate resin, epoxy resin, radical polymerizable acrylic resin, maleimide resin and the like can be mentioned.
シアネート樹脂は、分子内に−NCO基を有するもので具体的に例示すると、1,3−ジシアナトベンゼン、1,4−ジシアナトベンゼン、1,3,5−トリシアナトベンゼン、1,3−ジシアナトナフタレン、1,4−ジシアナトナフタレン、1,6−ジシアナトナフタレン、1,8−ジシアナトナフタレン、2,6−ジシアナトナフタレン、2,7−ジシアナトナフタレン、1,3、6−トリシアナトナフタレン、4,4'−ジシアナトビ
フェニル、ビス(4−シアナトフェニル)メタン、ビス(3,5−ジメチル−4−シアナトフェニル)メタン、2,2−ビス(4−シアナトフェニル)プロパン、2,2−ビス(3,5−ジブロモ−4−シアナトフェニル)プロパン、ビス(4−シアナトフェニル)エーテル、ビス(4−シアナトフェニル)チオエーテル、ビス(4−シアナトフェニル)スルホン、トリス(4−シアナトフェニル)ホスファイト、トリス(4−シアナトフェニル)ホスフェート、及びノボラック樹脂とハロゲン化シアンとの反応により得られるシアネート類などが挙げられ、これらの多官能シアネート樹脂のシアネート基を三量化することによって形成されるトリアジン環を有するプレポリマーも使用できる。このプレポリマーは、上記の多官能シアネート樹脂モノマーを、例えば、鉱酸、ルイス酸などの酸、ナトリウムアルコラート、第三級アミン類などの塩基、炭酸ナトリウムなどの塩類を触媒として重合させることにより得られる。
Specific examples of the cyanate resin having —NCO groups in the molecule include 1,3-dicyanatobenzene, 1,4-dicyanatobenzene, 1,3,5-tricyanatobenzene, 1,3- Dicyanatonaphthalene, 1,4-dicyanatonaphthalene, 1,6-dicyanatonaphthalene, 1,8-dicyanatonaphthalene, 2,6-dicyanatonaphthalene, 2,7-dicyanatonaphthalene, 1,3,6- Tricyanatonaphthalene, 4,4′-dicyanatobiphenyl, bis (4-cyanatophenyl) methane, bis (3,5-dimethyl-4-cyanatophenyl) methane, 2,2-bis (4-cyanatophenyl) ) Propane, 2,2-bis (3,5-dibromo-4-cyanatophenyl) propane, bis (4-cyanatophenyl) ether, bis (4-cyanatofe) Nyl) thioether, bis (4-cyanatophenyl) sulfone, tris (4-cyanatophenyl) phosphite, tris (4-cyanatophenyl) phosphate, and cyanates obtained by reaction of novolac resins with cyanogen halides A prepolymer having a triazine ring formed by trimerization of the cyanate group of these polyfunctional cyanate resins can also be used. This prepolymer is obtained by polymerizing the above-mentioned polyfunctional cyanate resin monomer using, for example, an acid such as mineral acid or Lewis acid, a base such as sodium alcoholate or tertiary amine, or a salt such as sodium carbonate as a catalyst. It is done.
シアネート樹脂の硬化促進剤としては、一般に公知のものが使用できる。例えば、オクチル酸亜鉛、オクチル酸錫、ナフテン酸コバルト、ナフテン酸亜鉛、アセチルアセトン鉄などの有機金属錯体、塩化アルミニウム、塩化錫、塩化亜鉛などの金属塩、トリエチルアミン、ジメチルベンジルアミンなどのアミン類が挙げられるが、これらに限定されるものではない。これらの硬化促進剤は1種または2種以上混合して用いることができる。シアネート樹脂とエポキシ樹脂、オキセタン樹脂、アクリル樹脂、マレイミド樹脂を併用することも可能である。 As the curing accelerator for the cyanate resin, generally known ones can be used. Examples include organometallic complexes such as zinc octylate, tin octylate, cobalt naphthenate, zinc naphthenate and acetylacetone iron, metal salts such as aluminum chloride, tin chloride and zinc chloride, and amines such as triethylamine and dimethylbenzylamine. However, it is not limited to these. These curing accelerators can be used alone or in combination. Cyanate resin and epoxy resin, oxetane resin, acrylic resin, and maleimide resin can be used in combination.
エポキシ樹脂は、グリシジル基を分子内に1つ以上有する化合物であるが、グリシジル基は1分子に2つ以上含まれていることが好ましい。グリシジル基が1つの化合物のみでは反応させても十分な硬化物特性を示すことができないからである。グリシジル基を1分子に2つ以上含む化合物としては、ビスフェノールA、ビスフェノールF、ビフェノールなどのビスフェノール化合物またはこれらの誘導体、水素添加ビスフェノールA、水素添加ビスフェノールF、水素添加ビフェノール、シクロヘキサンジオール、シクロヘキサンジメタノール、シジロヘキサンジエタノールなどの脂環構造を有するジオールまたはこれらの誘導体、ブタンジオール、ヘキサンジオール、オクタンジオール、ノナンジオール、デカンジオールなどの脂肪族ジオールまたはこれらの誘導体などをエポキシ化した2官能のもの、トリヒドロキシフェニルメタン骨格、アミノフェノール骨格を有する3官能のもの、フェノールノボラック樹脂、クレゾールノボラック樹脂、フェノールアラルキル樹脂、ビフェニルアラルキル樹脂、ナフトールアラルキル樹脂などをエポキシ化した多官能のものなどが挙げられるがこれらに限定されるわけではなく、また樹脂組成物として室温で液状である必要があるので、単独でまたは混合物として室温で液状のものが好ましい。通常行われるように反応性の希釈剤を使用することも可能である。反応性希釈剤としては、フェニルグリシジルエーテル、クレジルグリシジルエーテルなどの1官能の芳香族グリシジルエーテル類、脂肪族グリシジルエーテル類などが挙げられる。エポキシ樹脂を硬化させる目的で硬化剤を使用する。 The epoxy resin is a compound having one or more glycidyl groups in the molecule, but preferably two or more glycidyl groups are contained in one molecule. This is because even if the glycidyl group is reacted with only one compound, sufficient cured product characteristics cannot be exhibited. Compounds containing two or more glycidyl groups per molecule include bisphenol compounds such as bisphenol A, bisphenol F, and biphenol or derivatives thereof, hydrogenated bisphenol A, hydrogenated bisphenol F, hydrogenated biphenol, cyclohexanediol, and cyclohexanedimethanol. Diols having a cycloaliphatic structure such as silohexanediethanol or derivatives thereof, and bifunctional epoxidized aliphatic diols such as butanediol, hexanediol, octanediol, nonanediol, decanediol, or derivatives thereof , Trihydroxyphenylmethane skeleton, trifunctional one having aminophenol skeleton, phenol novolak resin, cresol novolak resin, phenol aralkyl resin, bif Examples include, but are not limited to, polyfunctional resins obtained by epoxidizing ruar aralkyl resin, naphthol aralkyl resin, and the like, and the resin composition needs to be liquid at room temperature, either alone or as a mixture at room temperature. The liquid form is preferable. It is also possible to use reactive diluents as is usual. Examples of the reactive diluent include monofunctional aromatic glycidyl ethers such as phenyl glycidyl ether and cresyl glycidyl ether, and aliphatic glycidyl ethers. A curing agent is used for the purpose of curing the epoxy resin.
エポキシ樹脂の硬化剤としては、例えば、脂肪族アミン、芳香族アミン、ジシアンジアミド、ジカルボン酸ジヒドラジド化合物、酸無水物、フェノール樹脂などが挙げられる。ジヒドラジド化合物としては、アジピン酸ジヒドラジド、ドデカン酸ジヒドラジド、イソフタル酸ジヒドラジド、P−オキシ安息香酸ジヒドラジドなどのカルボン酸ジヒドラジドなどが挙げられ、酸無水物としてはフタル酸無水物、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、エンドメチレンテトラヒドロフタル酸無水物、ドデセニルコハク酸無水物、無水マレイン酸とポリブタジエンの反応物、無水マレイン酸とスチレンの共重合体などが挙げられる。フェノール樹脂とは1分子内にフェノール性水酸基を2つ以上有する化合物であり、1分子内にフェノール性水酸基を1つ有する化合物の場合には架橋構造をとることができないため硬化物特性が悪化し使用できない。また1分子内のフェノール性水酸基数は2つ以上であれば使用可能であるが、好ましいフェノール性水酸基の数は2〜5である。これより多い場合には分子量が大きくなりすぎるので導電性ペーストの粘度が高くなりすぎるため好ましくない。より好ましい1分子内のフェノール性水酸基数は2つまたは3つである。このような化合物としては、ビスフェノールF、ビスフェノールA、ビスフェノールS、テトラメチルビスフェノールA、テトラメチルビスフェノールF、テトラメチルビスフェノールS、ジヒドロキシジフェニルエーテル、ジヒドロキシベンゾフェノン、テトラメチルビフェノール、エチリデンビスフェノール、メチルエチリデンビス(メチルフェノール)、シクロへキシリデンビスフェノール、ビフェノールなどのビスフェノール類及びその誘導体、トリ(ヒドロキシフェニル)メタン、トリ(ヒドロキシフェニル)エタンなどの3官能のフェノール類及びその誘導体、フェノールノボラック、クレゾールノボラックなどのフェノール類とホルムアルデヒドを反応することで得られる化合物で2核体または3核体がメインのもの及びその誘導体などが挙げられる。 Examples of the epoxy resin curing agent include aliphatic amines, aromatic amines, dicyandiamide, dicarboxylic acid dihydrazide compounds, acid anhydrides, and phenol resins. Examples of the dihydrazide compound include carboxylic acid dihydrazides such as adipic acid dihydrazide, dodecanoic acid dihydrazide, isophthalic acid dihydrazide, and P-oxybenzoic acid dihydrazide. Acid anhydrides include phthalic anhydride, tetrahydrophthalic anhydride, and hexahydroanhydride. Examples thereof include phthalic acid, endomethylenetetrahydrophthalic anhydride, dodecenyl succinic anhydride, a reaction product of maleic anhydride and polybutadiene, and a copolymer of maleic anhydride and styrene. A phenol resin is a compound having two or more phenolic hydroxyl groups in one molecule. In the case of a compound having one phenolic hydroxyl group in one molecule, the cured product characteristics deteriorate because a crosslinked structure cannot be taken. I can not use it. The number of phenolic hydroxyl groups in one molecule can be used as long as it is 2 or more, but the number of phenolic hydroxyl groups is preferably 2 to 5. When the amount is larger than this, the molecular weight becomes too large, and the viscosity of the conductive paste becomes too high, which is not preferable. The number of phenolic hydroxyl groups in one molecule is more preferably 2 or 3. Such compounds include bisphenol F, bisphenol A, bisphenol S, tetramethyl bisphenol A, tetramethyl bisphenol F, tetramethyl bisphenol S, dihydroxy diphenyl ether, dihydroxy benzophenone, tetramethyl biphenol, ethylidene bisphenol, methyl ethylidene bis (methyl phenol ), Bisphenols such as cyclohexylidene bisphenol and biphenol and their derivatives, trifunctional phenols such as tri (hydroxyphenyl) methane and tri (hydroxyphenyl) ethane and their derivatives, and phenols such as phenol novolac and cresol novolac Compounds obtained by reacting formaldehyde with formaldehyde and dinuclear or trinuclear main compounds and derivatives thereof Body and the like.
エポキシ樹脂の硬化促進剤としては、イミダゾール類、トリフェニルホスフィンまたはテトラフェニルホスフィンの塩類、ジアザビシクロウンデセンなどのアミン系化合物及びその塩類などが挙げられるが、2−メチルイミダゾール,2−エチルイミダゾール,2−フェニルイミダゾール,2−フェニル−4−メチルイミダゾール,2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール,2−フェニル−4,5−ジヒドロキシメチルイミダゾール,2−C11H23−イミダゾール、2−メチルイミダゾールと2,4−ジアミノ−6−ビニルトリアジンとの付加物といったイミダゾール化合物が好適に用いられる。なかでも特に好ましいのは融点が180℃以上のイミダゾール化合物である。 Examples of epoxy resin curing accelerators include imidazoles, triphenylphosphine or tetraphenylphosphine salts, amine compounds such as diazabicycloundecene, and salts thereof. 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-C 11 H 23 -imidazole, An imidazole compound such as an adduct of 2-methylimidazole and 2,4-diamino-6-vinyltriazine is preferably used. Particularly preferred is an imidazole compound having a melting point of 180 ° C. or higher.
ラジカル重合性のアクリル樹脂としては、例えば、不飽和二重結合を有する(メタ)アクリル樹脂などがあるが、特に限定されるものではない。なかでも分子量が500〜10000のポリエーテル、ポリエステル、ポリカーボネート、ポリ(メタ)アクリレート、ポリブタジエン、ブタジエンアクリロニトリル共重合体で(メタ)アクリル基を有するものが好ましい。
ポリエーテルとしては、炭素数が3〜6の2価の有機基がエーテル結合を介して繰り返したものが好ましく、芳香族環を含まないものが好ましい。ポリエーテルポリオールと(メタ)アクリル酸またはその誘導体との反応により得ることが可能である。
ポリエステルとしては、炭素数が3〜6の2価の有機基がエステル結合を介して繰り返
したものが好ましく、芳香族環を含まないものが好ましい。ポリエステルポリオールと(メタ)アクリル酸またはその誘導体との反応により得ることが可能である。
ポリカーボネートとしては、炭素数が3〜6の2価の有機基がカーボネート結合を介して繰り返したものが好ましく、芳香族環を含まないものが好ましい。ポリカーボネートポリオールと(メタ)アクリル酸またはその誘導体との反応により得ることが可能である。
Examples of the radical polymerizable acrylic resin include (meth) acrylic resin having an unsaturated double bond, but are not particularly limited. Of these, polyethers having a molecular weight of 500 to 10,000, polyesters, polycarbonates, poly (meth) acrylates, polybutadienes and butadiene acrylonitrile copolymers having a (meth) acryl group are preferable.
As the polyether, those in which a divalent organic group having 3 to 6 carbon atoms is repeated via an ether bond are preferable, and those having no aromatic ring are preferable. It can be obtained by reacting a polyether polyol with (meth) acrylic acid or a derivative thereof.
As polyester, the thing which the C3-C6 bivalent organic group repeated via the ester bond is preferable, and the thing which does not contain an aromatic ring is preferable. It can be obtained by reacting a polyester polyol with (meth) acrylic acid or a derivative thereof.
As a polycarbonate, what a C3-C6 bivalent organic group repeated via the carbonate bond is preferable, and what does not contain an aromatic ring is preferable. It can be obtained by reacting a polycarbonate polyol with (meth) acrylic acid or a derivative thereof.
ポリ(メタ)アクリレートとしては、(メタ)アクリル酸と(メタ)アクリレートとの共重合体または水酸基を有する(メタ)アクリレートと極性基を有さない(メタ)アクリ
レートとの共重合体などが好ましい。これら共重合体とカルボキシ基と反応する場合には水酸基を有するアクリレート、水酸基と反応する場合には(メタ)アクリル酸またはその誘導体を反応することにより得ることが可能である。
ポリブタジエンとしては、カルボキシ基を有するポリブタジエンと水酸基を有する(メタ)アクリレートとの反応、水酸基を有するポリブタジエンと(メタ)アクリル酸またはその誘導体との反応により得ることが可能であり、また無水マレイン酸を付加したポリブタジエンと水酸基を有する(メタ)アクリレートとの反応により得ることも可能である。
ブタジエンアクリロニトリル共重合体としては、カルボキシ基を有するブタジエンアクリロニトリル共重合体と水酸基を有する(メタ)アクリレートとの反応により得ることが可能である。
The poly (meth) acrylate is preferably a copolymer of (meth) acrylic acid and (meth) acrylate or a copolymer of (meth) acrylate having a hydroxyl group and (meth) acrylate having no polar group. . In the case of reacting these copolymers with a carboxy group, it can be obtained by reacting an acrylate having a hydroxyl group, and in the case of reacting with a hydroxyl group, (meth) acrylic acid or a derivative thereof.
Polybutadiene can be obtained by reaction of polybutadiene having a carboxy group and (meth) acrylate having a hydroxyl group, reaction of polybutadiene having a hydroxyl group and (meth) acrylic acid or a derivative thereof. It can also be obtained by reaction between the added polybutadiene and a (meth) acrylate having a hydroxyl group.
The butadiene acrylonitrile copolymer can be obtained by a reaction between a butadiene acrylonitrile copolymer having a carboxy group and a (meth) acrylate having a hydroxyl group.
必要により以下に示す化合物を併用することも可能である。例えば、2−ヒドロキシエチル(メタ)アクリレート、2−ヒドロキシプロピル(メタ)アクリレート、3−ヒドロキシプロピル(メタ)アクリレート、2−ヒドロキシブチル(メタ)アクリレート、3−ヒドロキシブチル(メタ)アクリレート、4−ヒドロキシブチル(メタ)アクリレート、1,2−シクロヘキサンジオールモノ(メタ)アクリレート、1,3−シクロヘキサンジオールモノ(メタ)アクリレート、1,4−シクロヘキサンジオールモノ(メタ)アクリレート、1,2−シクロヘキサンジメタノールモノ(メタ)アクリレート、1,3−シクロヘキサンジメタノールモノ(メタ)アクリレート、1,4−シクロヘキサンジメタノールモノ(メタ)アクリレート、1,2−シクロヘキサンジエタノールモノ(メタ)アクリレート、1,3−シクロヘキサンジエタノールモノ(メタ)アクリレート、1,4−シクロヘキサンジエタノールモノ(メタ)アクリレート、グリセリンモノ(メタ)アクリレート、グリセリンジ(メタ)アクリレート、トリメチロールプロパンモノ(メタ)アクリレート、トリメチロールプロパンジ(メタ)アクリレート、ペンタエリスリトールモノ(メタ)アクリレート、ペンタエリスリトールジ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ネオペンチルグリコールモノ(メタ)アクリレートなどの水酸基を有する(メタ)アクリレートやこれら水酸基を有する(メタ)アクリレートとジカルボン酸またはその誘導体を反応して得られるカルボキシ基を有する(メタ)アクリレートなどが挙げられる。ここで使用可能なジカルボン酸としては、例えばしゅう酸、マロン酸、コハク酸、グルタル酸、アジピン酸、ピメリン酸、スベリン酸、アゼライン酸、セバシン酸、マレイン酸、フマル酸、フタル酸、テトラヒドロフタル酸、ヘキサヒドロフタル酸及びこれらの誘導体が挙げられる。
If necessary, the following compounds can be used in combination. For example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, 4-hydroxy Butyl (meth) acrylate, 1,2-cyclohexanediol mono (meth) acrylate, 1,3-cyclohexanediol mono (meth) acrylate, 1,4-cyclohexanediol mono (meth) acrylate, 1,2-cyclohexanedimethanol mono (Meth) acrylate, 1,3-cyclohexanedimethanol mono (meth) acrylate, 1,4-cyclohexanedimethanol mono (meth) acrylate, 1,2-cyclohexanediethanol mono (meth)
上記以外にもメチル(メタ)アクリレート、エチル(メタ)アクリレート、n−ブチル(メタ)アクリレート、イソブチル(メタ)アクリレート、ターシャルブチル(メタ)アクリレート、イソデシル(メタ)アクリレート、ラウリル(メタ)アクリレート、トリデシル(メタ)アクリレート、セチル(メタ)アクリレート、ステアリル(メタ)アクリレート、イソアミル(メタ)アクリレート、イソステアリル(メタ)アクリレート、ベヘニル(メタ)アクリレート、2−エチルヘキシル(メタ)アクリレート、その他のアルキル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、ターシャルブチルシクロヘキシル(メタ)アクリレート、テトラヒドロフルフリル(メタ)アクリレート、ベンジル(メタ)アクリレート、フェノキシエチル(メタ)アクリレート、イソボルニル(メタ)アクリレート、グリシジル(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、ジンクモノ(メタ)アクリレート、ジンクジ(メタ)アクリレート、ジメチルアミノエチル(メタ)アクリレート、ジエチルアミノエチル(メタ)アクリレート、ネオペンチルグリコール(メタ)アクリレート、トリフロロエチル(メタ)アクリレート、2,2,3,3−テトラフロロプロピル(メタ)アクリレート、2,2,3,3,4,4−ヘキサフロロブチル(メタ)アクリレート、パーフロロオクチル(メタ)アクリレート、パーフロロオクチルエチル(メタ)アクリレート、エチレングリコールジ(メタ)アクリレート、プロピレングリコールジ(メタ)アクリレート、1,4−ブタンジオール
ジ(メタ)アクリレート、1,6−ヘキサンジオールジ(メタ)アクリレート、1,9−ノナンジオールジ(メタ)アクリレート、1,3−ブタンジオールジ(メタ)アクリレート、1,10−デカンジオールジ(メタ)アクリレート、テトラメチレングリコールジ(メタ)アクリレート、メトキシエチル(メタ)アクリレート、ブトキシエチル(メタ)アクリレート、エトキシジエチレングリコール(メタ)アクリレート、メトキシポリアルキレングリコールモノ(メタ)アクリレート、オクトキシポリアルキレングリコールモノ(メタ)アクリレート、ラウロキシポリアルキレングリコールモノ(メタ)アクリレート、ステアロキシポリアルキレングリコールモノ(メタ)アクリレート、アリロキシポリアルキレングリコールモノ(メタ)アクリレート、ノニルフェノキシポリアルキレングリコールモノ(メタ)アクリレート、N,N’−メチレンビス(メタ)アクリルアミド、N,N’−エチレンビス(メタ)アクリルアミド、1,2−ジ(メタ)アクリルアミドエチレングリコール、ジ(メタ)アクリロイロキシメチルトリシクロデカン、N−(メタ)アクリロイロキシエチルマレイミド、N−(メタ)アクリロイロキシエチルヘキサヒドロフタルイミド、N−(メタ)アクリロイロキシエチルフタルイミド、n−ビニル−2−ピロリドン、スチレン誘導体、α−メチルスチレン誘導体などを使用することも可能である。
In addition to the above, methyl (meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, tertiary butyl (meth) acrylate, isodecyl (meth) acrylate, lauryl (meth) acrylate, Tridecyl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, isoamyl (meth) acrylate, isostearyl (meth) acrylate, behenyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, other alkyl (meth) ) Acrylate, cyclohexyl (meth) acrylate, tertiary butyl cyclohexyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate, benzyl (meth) acrylate, phenol Xylethyl (meth) acrylate, isobornyl (meth) acrylate, glycidyl (meth) acrylate, trimethylolpropane tri (meth) acrylate, zinc mono (meth) acrylate, zinc di (meth) acrylate, dimethylaminoethyl (meth) acrylate, diethylaminoethyl ( (Meth) acrylate, neopentyl glycol (meth) acrylate, trifluoroethyl (meth) acrylate, 2,2,3,3-tetrafluoropropyl (meth) acrylate, 2,2,3,3,4,4-hexafluoro Butyl (meth) acrylate, perfluorooctyl (meth) acrylate, perfluorooctylethyl (meth) acrylate, ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, 1,3-butanediol di (meth) acrylate, 1 , 10-decanediol di (meth) acrylate, tetramethylene glycol di (meth) acrylate, methoxyethyl (meth) acrylate, butoxyethyl (meth) acrylate, ethoxydiethylene glycol (meth) acrylate, methoxypolyalkylene glycol mono (meth) acrylate , Octoxy polyalkylene glycol mono (meth) acrylate, Lauroxy polyalkylene glycol mono (meth) acrylate, Stearoxy polyalkylene glycol mono (meth) acrylate, Allyloxy polyalkyl Lenglycol mono (meth) acrylate, nonylphenoxypolyalkylene glycol mono (meth) acrylate, N, N′-methylenebis (meth) acrylamide, N, N′-ethylenebis (meth) acrylamide, 1,2-di (meth) Acrylamide ethylene glycol, di (meth) acryloyloxymethyl tricyclodecane, N- (meth) acryloyloxyethyl maleimide, N- (meth) acryloyloxyethyl hexahydrophthalimide, N- (meth) acryloyloxyethyl phthalimide , N-vinyl-2-pyrrolidone, styrene derivatives, α-methylstyrene derivatives and the like can also be used.
さらに重合開始剤として熱ラジカル重合開始剤が好ましく用いられる。通常熱ラジカル重合開始剤として用いられるものであれば特に限定しないが、望ましいものとしては、急速加熱試験(試料1gを電熱板の上にのせ、4℃/分で昇温した時の分解開始温度)における分解温度が40〜140℃となるものが好ましい。分解温度が40℃未満だと、導電性ペーストの常温における保存性が悪くなり、140℃を越えると硬化時間が極端に長くなるため好ましくない。これを満たす熱ラジカル重合開始剤の具体例としては、メチルエチルケトンパーオキサイド、メチルシクロヘキサノンパーオキサイド、メチルアセトアセテートパーオキサイド、アセチルアセトンパーオキサイド、1,1−ビス(t−ブチルパーオキシ)3,3,5−トリメチルシクロヘキサン、1,1−ビス(t−ヘキシルパーオキシ)シクロヘキサン、1,1−ビス(t−ヘキシルパーオキシ)3,3,5−トリメチルシクロヘキサン、1,1−ビス(t−ブチルパーオキシ)シクロヘキサン、2,2−ビス(4,4−ジ−t−ブチルパーオキシシクロヘキシル)プロパン、1,1−ビス(t−ブチルパーオキシ)シクロドデカン、n−ブチル4,4−ビス(t−ブチルパーオキシ)バレレート、2,2−ビス(t−ブチルパーオキシ)ブタン、1,1−ビス(t−ブチルパーオキシ)−2−メチルシクロヘキサン、t−ブチルハイドロパーオキサイド、P−メンタンハイドロパーオキサイド、1,1,3,3−テトラメチルブチルハイドロパーオキサイド、t−ヘキシルハイドロパーオキサイド、ジクミルパーオキサイド、2,5−ジメチル−2,5−ビス(t−ブチルパーオキシ)ヘキサン、α、α’−ビス(t−ブチルパーオキシ)ジイソプロピルベンゼン、t−ブチルクミルパーオキサイド、ジ−t−ブチルパーオキサイド、2,5−ジメチル−2,5−ビス(t−ブチルパーオキシ)ヘキシン−3、イソブチリルパーオキサイド、3,5,5−トリメチルヘキサノイルパーオキサイド、オクタノイルパーオキサイド、ラウロイルパーオキサイド、桂皮酸パーオキサイド、m−トルオイルパーオキサイド、ベンゾイルパーオキサイド、ジイソプロピルパーオキシジカーボネート、ビス(4−t−ブチルシクロヘキシル)パーオキシジカーボネート、ジ−3−メトキシブチルパーオキシジカーボネート、ジ−2−エチルヘキシルパーオキシジカーボネート、ジ−sec−ブチルパーオキシジカーボネート、ジ(3−メチル−3−メトキシブチル)パーオキシジカーボネート、ジ(4−t−ブチルシクロヘキシル)パーオキシジカーボネート、α、α’−ビス(ネオデカノイルパーオキシ)ジイソプロピルベンゼン、クミルパーオキシネオデカノエート、1,1,3,3,−テトラメチルブチルパーオキシネオデカノエート、1−シクロヘキシル−1−メチ−ルエチルパーオキシネオデカノエート、t−ヘキシルパーオキシネオデカノエート、t−ブチルパーオキシネオデカノエート、t−ヘキシルパーオキシピバレート、t−ブチルパーオキシピバレート、2,5−ジメチル−2,5−ビス(2−エチルヘキサノイルパーオキシ)ヘキサン、1,1,3,3−テトラメチルブチルパーオキシ−2−エチルへキサノエート、1−シクロヘキシル−
1−メチルエチルパーオキシ−2−エチルヘキサノエート、t−ヘキシルパーオキシ−2−エチルヘキサノエート、t−ブチルパーオキシ−2−エチルヘキサノエート、t−ブチルパーオキシイソブチレート、t−ブチルパーオキシマレイックアシッド、t−ブチルパーオキシラウレート、t−ブチルパーオキシ−3,5,5−トリメチルヘキサノエート、t−ブチルパーオキシイソプロピルモノカーボネート、t−ブチルパーオキシ−2−エチルヘキシルモノカーボネート、2,5−ジメチル−2,5−ビス(ベンゾイルパーオキシ)ヘキサン、t−ブチルパーオキシアセテート、t−ヘキシルパーオキシベンゾエート、t−ブチルパーオキシ−m−トルオイルベンゾエート、t−ブチルパーオキシベンゾエート、ビス(t−ブチルパーオキシ)イソフタレート、t−ブチルパーオキシアリルモノカーボネート、3,3’,4,4’−テトラ(t−ブチルパーオキシカルボニル)ベンゾフェノンなどが挙げられるが、これらは単独または硬化性を制御するため2種類以上を混合して用いることもできる。
Further, a thermal radical polymerization initiator is preferably used as the polymerization initiator. Although it is not particularly limited as long as it is normally used as a thermal radical polymerization initiator, it is desirable that a rapid heating test (decomposition start temperature when a sample is placed on an electric heating plate and heated at 4 ° C./min. In which the decomposition temperature is 40 to 140 ° C. When the decomposition temperature is less than 40 ° C., the storage stability of the conductive paste at room temperature is deteriorated, and when it exceeds 140 ° C., the curing time becomes extremely long, which is not preferable. Specific examples of the thermal radical polymerization initiator satisfying this include methyl ethyl ketone peroxide, methylcyclohexanone peroxide, methyl acetoacetate peroxide, acetylacetone peroxide, 1,1-bis (t-butylperoxy) 3, 3, 5 -Trimethylcyclohexane, 1,1-bis (t-hexylperoxy) cyclohexane, 1,1-bis (t-hexylperoxy) 3,3,5-trimethylcyclohexane, 1,1-bis (t-butylperoxy) ) Cyclohexane, 2,2-bis (4,4-di-t-butylperoxycyclohexyl) propane, 1,1-bis (t-butylperoxy) cyclododecane, n-butyl 4,4-bis (t- Butyl peroxy) valerate, 2,2-bis (t-butylperoxy) Tan, 1,1-bis (t-butylperoxy) -2-methylcyclohexane, t-butyl hydroperoxide, P-menthane hydroperoxide, 1,1,3,3-tetramethylbutyl hydroperoxide, t -Hexyl hydroperoxide, dicumyl peroxide, 2,5-dimethyl-2,5-bis (t-butylperoxy) hexane, α, α'-bis (t-butylperoxy) diisopropylbenzene, t-butyl Cumyl peroxide, di-t-butyl peroxide, 2,5-dimethyl-2,5-bis (t-butylperoxy) hexyne-3, isobutyryl peroxide, 3,5,5-trimethylhexanoyl peroxide , Octanoyl peroxide, lauroyl peroxide, cinnamic acid peroxide, m-toluoyl peroxide, benzoyl peroxide, diisopropyl peroxydicarbonate, bis (4-t-butylcyclohexyl) peroxydicarbonate, di-3-methoxybutyl peroxydicarbonate, di-2-ethylhexyl peroxide Carbonate, di-sec-butylperoxydicarbonate, di (3-methyl-3-methoxybutyl) peroxydicarbonate, di (4-t-butylcyclohexyl) peroxydicarbonate, α, α′-bis (neo) Decanoylperoxy) diisopropylbenzene, cumylperoxyneodecanoate, 1,1,3,3-tetramethylbutylperoxyneodecanoate, 1-cyclohexyl-1-methylethylperoxyneodecano Eate, t-hexyl pao Cineodecanoate, t-butylperoxyneodecanoate, t-hexylperoxypivalate, t-butylperoxypivalate, 2,5-dimethyl-2,5-bis (2-ethylhexanoylperoxy) ) Hexane, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 1-cyclohexyl-
1-methylethylperoxy-2-ethylhexanoate, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t -Butylperoxymaleic acid, t-butylperoxylaurate, t-butylperoxy-3,5,5-trimethylhexanoate, t-butylperoxyisopropylmonocarbonate, t-butylperoxy-2- Ethylhexyl monocarbonate, 2,5-dimethyl-2,5-bis (benzoylperoxy) hexane, t-butylperoxyacetate, t-hexylperoxybenzoate, t-butylperoxy-m-toluoylbenzoate, t- Butyl peroxybenzoate, bis (t-butyl pero I) Isophthalate, t-butylperoxyallyl monocarbonate, 3,3 ′, 4,4′-tetra (t-butylperoxycarbonyl) benzophenone, etc., but these are used alone or for controlling curability. Two or more types can be mixed and used.
マレイミド樹脂は、1分子内にマレイミド基を1つ以上含む化合物であり、例えば、N,N’−(4,4’−ジフェニルメタン)ビスマレイミド、ビス(3−エチル−5−メチル−4−マレイミドフェニル)メタン、2,2−ビス[4−(4−マレイミドフェノキシ)フェニル]プロパンなどのビスマレイミド樹脂が挙げられる。より好ましいマレイミド樹脂は、ダイマー酸ジアミンと無水マレイン酸の反応により得られる化合物、マレイミド酢酸、マレイミドカプロン酸といったマレイミド化アミノ酸とポリオールの反応により得られる化合物である。マレイミド化アミノ酸は、無水マレイン酸とアミノ酢酸またはアミノカプロン酸とを反応することで得られ、ポリオールとしては、ポリエーテルポリオール、ポリエステルポリオール、ポリカーボネートポリオール、ポリ(メタ)アクリレートポリオールが好ましく、芳香族環を含まないものが特に好ましい。マレイミド基は、アリル基と反応可能であるのでアリルエステル樹脂との併用も好ましい。アリルエステル樹脂としては、脂肪族のものが好ましく、中でも特に好ましいのはシクロヘキサンジアリルエステルと脂肪族ポリオールのエステル交換により得られる化合物である。またシアネート樹脂、エポキシ樹脂、アクリル樹脂との併用も好ましい。 The maleimide resin is a compound containing one or more maleimide groups in one molecule, and examples thereof include N, N ′-(4,4′-diphenylmethane) bismaleimide and bis (3-ethyl-5-methyl-4-maleimide). And bismaleimide resins such as phenyl) methane and 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane. More preferred maleimide resins are compounds obtained by reaction of dimer acid diamine and maleic anhydride, and compounds obtained by reaction of maleimidated amino acids such as maleimide acetic acid and maleimide caproic acid with polyols. The maleimidated amino acid is obtained by reacting maleic anhydride with aminoacetic acid or aminocaproic acid. As the polyol, polyether polyol, polyester polyol, polycarbonate polyol, and poly (meth) acrylate polyol are preferable, and an aromatic ring is formed. What does not contain is especially preferable. Since the maleimide group can react with an allyl group, the combined use with an allyl ester resin is also preferable. As the allyl ester resin, an aliphatic one is preferable, and among them, a compound obtained by transesterification of a cyclohexane diallyl ester and an aliphatic polyol is particularly preferable. Moreover, combined use with cyanate resin, an epoxy resin, and an acrylic resin is also preferable.
本発明で用いる少なくとも1つの一般式(1)で示される結合と少なくとも1つのアルコキシシリル基を有する化合物(C)は、その種類については特に限定されるものではないが化合物(C)の50%以上が一般式(1)におけるnが2である化合物であることが好ましい。ここで化合物(C)の50%以上とは、化合物(C)を高速液体クロマトグラムにて測定して得られたチャートの一般式(1)に示される結合を有する成分の面積に対するn=2の成分の面積比である。 The type of the compound (C) having at least one bond represented by the general formula (1) and at least one alkoxysilyl group used in the present invention is not particularly limited, but 50% of the compound (C) The above is preferably a compound in which n in the general formula (1) is 2. Here, 50% or more of the compound (C) means n = 2 with respect to the area of the component having a bond represented by the general formula (1) of the chart obtained by measuring the compound (C) with a high performance liquid chromatogram. Is the area ratio of the components.
化合物(C)を使用する第1の理由は良好な接着特性を得るためである。硫黄原子を含有する化合物が金属との密着を向上させることはよく知られているが、なかでも化合物(C)を用いた場合に接着性向上効果が著しい。硫黄原子とアルコキシシリル基を有する化合物として3−メルカプトプロピルトリメトキシシランが一般的だが、メルカプト基は、熱硬化性樹脂(B)に含まれるグリシジル基や(メタ)アクリロイル基と室温でも反応するため樹脂組成物の保存性が悪化するため好ましくない。特に(メタ)アクリロイル基との反応は室温でも著しく進行し場合によっては室温でも10分程度で流動しなくなる。グリシジル基との反応は(メタ)アクリロイル基との反応の場合ほど急激ではないが配合する割合が多い場合には室温24時間程度で粘度の増加が観察され始める。このため配合する量を調整する必要があるが保存性を確保するためには、良好な接着性を得るのに十分な量を配合することができない。
ここで一般式(1)に示される結合には急激な反応を起こす活性水素が存在しないため室温での保存性を悪化させることなく接着性を向上することが可能となる。
The first reason for using the compound (C) is to obtain good adhesive properties. It is well known that a compound containing a sulfur atom improves the adhesion with a metal, but in particular, when the compound (C) is used, the effect of improving adhesiveness is remarkable. As a compound having a sulfur atom and an alkoxysilyl group, 3-mercaptopropyltrimethoxysilane is generally used, but the mercapto group reacts with the glycidyl group or (meth) acryloyl group contained in the thermosetting resin (B) even at room temperature. This is not preferable because the storage stability of the resin composition is deteriorated. In particular, the reaction with the (meth) acryloyl group proceeds remarkably even at room temperature, and in some cases, it does not flow in about 10 minutes even at room temperature. Although the reaction with the glycidyl group is not as rapid as in the case of the reaction with the (meth) acryloyl group, an increase in the viscosity starts to be observed at about room temperature for 24 hours when the blending ratio is large. Therefore, it is necessary to adjust the amount to be blended, but in order to ensure storage stability, it is not possible to blend a sufficient amount to obtain good adhesiveness.
Here, since there is no active hydrogen that causes a rapid reaction in the bond represented by the general formula (1), it is possible to improve the adhesiveness without deteriorating the storage stability at room temperature.
化合物(C)を使用する第2の理由は硬化反応時に銀粉(A)と反応することで樹脂組成
物と支持体との接着力向上のみならず樹脂組成物自体の凝集力を向上させる点である。前述のように硫黄原子は金属と結合可能であり金属との良好な接着性を要求される場合によく利用されるが、一般式(1)に示される結合の場合室温付近での銀粉との反応は例えばメルカプト基に比較すると非常にゆっくりしたものである。このため硬化時には樹脂組成物中に未反応で存在するため、被着体との接着性向上のみならず銀粉(A)とも強固に結合することが可能となり樹脂組成物自体の凝集力を向上させることが可能となる。
The second reason for using the compound (C) is that it improves the cohesive strength of the resin composition itself as well as improving the adhesive force between the resin composition and the support by reacting with the silver powder (A) during the curing reaction. is there. As described above, the sulfur atom can be bonded to a metal and is often used when good adhesion to the metal is required. In the case of the bond represented by the general formula (1), The reaction is very slow compared to eg mercapto groups. For this reason, since it is unreacted in the resin composition at the time of curing, not only the adhesion to the adherend is improved, but also the silver powder (A) can be firmly bonded and the cohesive force of the resin composition itself is improved. It becomes possible.
化合物(C)を使用する第3の理由は、良好な保存性である。熱硬化性樹脂(B)が重合開始剤として有機過酸化物を含む場合、保存中でも分解は進行しており特に分解温度の低い重合開始剤の場合には分解により発生したラジカルが熱硬化性樹脂(B)の反応を引き起こし粘度上昇が顕著になる場合がある。通常ハイドロキノンなどの禁止剤を添加することで粘度上昇を抑えるが、禁止剤を多量に配合すると硬化性の悪化が著しくなる場合、硬化物特性に悪影響を及ぼす場合がある。ここでスルフィド結合は発生したラジカルをトラップすることが可能なので禁止剤として働き粘度上昇を抑制することが可能であると共に、硬化開始温度の上昇は見られるが汎用の禁止剤ほどの悪影響はない。なかでも硬化物特性への悪化は見られないので好適に使用することが可能である。 The third reason for using the compound (C) is good storage stability. When the thermosetting resin (B) contains an organic peroxide as a polymerization initiator, the decomposition proceeds even during storage, and in particular in the case of a polymerization initiator having a low decomposition temperature, radicals generated by the decomposition are the thermosetting resin. The reaction (B) may be caused and the viscosity increase may become remarkable. Usually, an increase in viscosity is suppressed by adding an inhibitor such as hydroquinone. However, if a large amount of the inhibitor is added, if the curability deteriorates significantly, the properties of the cured product may be adversely affected. Here, since the sulfide bond can trap the generated radical, it acts as an inhibitor and can suppress an increase in viscosity, and an increase in the curing start temperature can be seen, but it is not as bad as a general-purpose inhibitor. In particular, since the deterioration of the cured product properties is not observed, it can be used preferably.
化合物(C)を使用する第4の理由は、保存安定性である。前述したように化合物(C)は銀粉(A)と反応し樹脂組成物硬化物の凝集力向上に効果的だが、室温でも非常にゆっくりではあるが銀粉と反応し、支持体との接着力向上に必要な量が不足し接着力の低下が観察される場合がある。このため樹脂組成物に化合物(C)を多めに配合する必要がある。ここで室温での化合物(C)と銀粉(A)の反応について検討を行った結果、一般式(1)に示される結合のnが大きい成分が選択的に反応することが確認された。 The fourth reason for using the compound (C) is storage stability. As described above, the compound (C) reacts with the silver powder (A) and is effective in improving the cohesive strength of the cured resin composition, but it reacts with the silver powder even at room temperature, but improves the adhesion to the support. In some cases, the amount necessary for this is insufficient, and a decrease in the adhesive strength is observed. For this reason, it is necessary to mix | blend a compound (C) much with a resin composition. As a result of examining the reaction between the compound (C) and the silver powder (A) at room temperature, it was confirmed that the component having a large bond n shown in the general formula (1) reacts selectively.
図1には、ラウロイルメタクリレート:カブラス4(一般式(1)におけるnが2である成分が約19%、一般式(1)におけるnが4以上である成分が約54%):銀粉を重量比で9:1:40の割合で混合した直後(a−1)、及び混合物を25℃48時間放置した後(a−2)のサンプルのゲルパーミュエーショングロマトグラフ(GPC)の測定結果である。測定試料は上記サンプルを遠心分離した上澄み100mgをテトラヒドロフラン6mlに溶解したものを用い、UV検出器(波長254nm)にて測定を行った。
GPCの測定は、Waters社製アライアンス(2695セパレーションズモデュール、2414リフラクティブインデックスディテクター、TSKゲルGMHHR−Lx2+TSKガードカラムHHR−Lx1、移動相:THF、1.0ml/分)を用い、カラム温度40.0℃、UV検出器内温度40.0℃、サンプル注入量100μlにて行った。
図1において、右側のラウロイルメタクリレートのピーク(溶離時間約18分)面積は、混合した直後(a−1)と混合物を25℃48時間放置した後(a−2)ともほぼ同じなのに対し、左側のカブラス4のピーク(溶離時間約17分)面積は、混合した直後(a−1)に対して、混合物を25℃48時間放置した後(a−2)では減少していることがわかる。
In FIG. 1, lauroyl methacrylate: Cabras 4 (about 19% of the component where n is 2 in the general formula (1), about 54% of the component where n is 4 or more in the general formula (1)): weight of silver powder The measurement results of the gel permeation chromatograph (GPC) of the sample immediately after mixing at a ratio of 9: 1: 40 (a-1) and after leaving the mixture at 25 ° C. for 48 hours (a-2) is there. The measurement sample was measured with a UV detector (wavelength 254 nm) using 100 mg of the supernatant obtained by centrifuging the sample and dissolving it in 6 ml of tetrahydrofuran.
For measurement of GPC, a Waters Alliance (2695 Separations Module, 2414 Refractive Index Detector, TSK Gel GMHHR-Lx2 + TSK Guard Column HHR-Lx1, mobile phase: THF, 1.0 ml / min) was used, and the column temperature was 40.0. The measurement was performed at a temperature of 4 ° C., a sample injection volume of 100 μl.
In FIG. 1, the area of the right lauroyl methacrylate peak (elution time of about 18 minutes) is almost the same as that immediately after mixing (a-1) and after leaving the mixture at 25 ° C. for 48 hours (a-2), whereas It can be seen that the area of the peak of Cabras 4 (elution time of about 17 minutes) decreased immediately after mixing (a-1) and after leaving the mixture at 25 ° C. for 48 hours (a-2).
一方図2は、ラウロイルメタクリレート:カブラス2A(一般式(1)におけるnが2である成分が約58%、一般式(1)におけるnが4以上である成分が約10%):銀粉を重量比で9:1:40の割合で混合した直後(b−1)、及び混合物を25℃48時間放置した後(b−2)のサンプルのGPC測定結果である。図2よりラウロイルメタクリレート/カブラス2A/銀粉の混合物の場合、25℃48時間経過してもピークにはほとんど差が観察されず、良好な保存安定性を示すことがわかる。このため化合物(C)は一般式(1)におけるnが2である化合物が50%以上であることが好ましく、一般式(1)におけるnが4以上である化合物が20%以下であることが好ましい。 On the other hand, FIG. 2 shows lauroyl methacrylate: Cabras 2A (about 58% of components where n is 2 in general formula (1), about 10% of components where n is 4 or more in general formula (1)): weight of silver powder It is a GPC measurement result of the sample immediately after mixing at a ratio of 9: 1: 40 (b-1) and after leaving the mixture at 25 ° C. for 48 hours (b-2). FIG. 2 shows that in the case of a mixture of lauroyl methacrylate / cabras 2A / silver powder, no significant difference is observed in the peak even after 48 hours at 25 ° C., indicating good storage stability. Therefore, the compound (C) is preferably 50% or more of the compound in which n in the general formula (1) is 2, and the compound in which n is 4 or more in the general formula (1) is 20% or less. preferable.
化合物(C)は少なくとも1つのアルコキシシリル基を有するが、アルコキシシリル基とはSi原子にメトキシ基、エトキシ基、ブトキシ基、その他のアルキルエーテル基から選ばれる少なくとも1種の官能基が1〜3個結合したものであり、反応性の観点からメトキシ基またはエトキシ基から選ばれる少なくとも1種であることがより好ましい。同様に反応性の観点からSi原子に結合している官能基は2個または3個が好ましく、最も好ましいのは3個の場合である。
化合物(C)は少なくとも1つのアルコキシシリル基を有するが、より好ましいのはアルコキシシリル基が2つの場合である。
このような化合物としては、ビス(トリメトキシシリルプロピル)ジスルフィド、ビス(トリエトキシシリルプロピル)ジスルフィド、ビス(トリブトキシシリルプロピル)ジスルフィド、ビス(ジメトキシメチルシリルプロピル)ジスルフィド、ビス(ジエトキシメチルシリルプロピル)ジスルフィド、ビス(ジブトキシメチルシリルプロピル)ジスルフィドなどが挙げられる。
なかでも特に好ましいのは、ビス(トリメトキシシリルプロピル)ジスルフィド、ビス(トリエトキシシリルプロピル)ジスルフィドであり前述のように一般式(1)におけるnが3以上の化合物を含むことは可能であるが、前述のように一般式(1)におけるnが2の化合物は50%以上含まれることが好ましい。
The compound (C) has at least one alkoxysilyl group, and the alkoxysilyl group has at least one functional group selected from a methoxy group, an ethoxy group, a butoxy group, and other alkyl ether groups on the Si atom. It is more preferably at least one selected from a methoxy group or an ethoxy group from the viewpoint of reactivity. Similarly, from the viewpoint of reactivity, the number of functional groups bonded to Si atoms is preferably 2 or 3, and most preferably 3.
Although the compound (C) has at least one alkoxysilyl group, it is more preferable that there are two alkoxysilyl groups.
Such compounds include bis (trimethoxysilylpropyl) disulfide, bis (triethoxysilylpropyl) disulfide, bis (tributoxysilylpropyl) disulfide, bis (dimethoxymethylsilylpropyl) disulfide, bis (diethoxymethylsilylpropyl) ) Disulfide, bis (dibutoxymethylsilylpropyl) disulfide and the like.
Of these, bis (trimethoxysilylpropyl) disulfide and bis (triethoxysilylpropyl) disulfide are particularly preferable, and it is possible to include a compound in which n in the general formula (1) is 3 or more as described above. As described above, it is preferable that 50% or more of the compound in which n is 2 in the general formula (1) is contained.
本発明の樹脂組成物には、必要により、消泡剤、界面活性剤、各種重合禁止剤、酸化防止剤などの添加剤を用いることができる。
本発明の樹脂組成物は、例えば各成分を予備混合した後、3本ロールを用いて混練した後真空下脱泡することにより製造することができる。
If necessary, additives such as antifoaming agents, surfactants, various polymerization inhibitors and antioxidants can be used in the resin composition of the present invention.
The resin composition of the present invention can be produced, for example, by premixing the components, kneading using three rolls, and degassing under vacuum.
本発明の樹脂組成物を用いて半導体装置を製作する方法は、公知の方法を用いることができる。例えば、市販のダイボンダーを用いて、リードフレームの所定の部位に樹脂組成物をディスペンス塗布した後、半導体素子をマウントし、加熱硬化する。その後、ワイヤーボンディングして、エポキシ樹脂を用いてトランスファー成形することによって半導体装置を製作する。または、フリップチップ接合後アンダーフィル材で封止したフリップチップBGA(Ball Grid Array)などのチップ裏面に樹脂組成物をディスペンスしヒートスプレッダー、リッドなどの放熱部品を搭載し加熱硬化するなどの使用方法も可能である。 As a method of manufacturing a semiconductor device using the resin composition of the present invention, a known method can be used. For example, using a commercially available die bonder, the resin composition is dispensed on a predetermined portion of the lead frame, and then the semiconductor element is mounted and heat-cured. Then, a semiconductor device is manufactured by wire bonding and transfer molding using an epoxy resin. Alternatively, a resin composition is dispensed on the back side of a chip such as flip chip BGA (Ball Grid Array) sealed with an underfill material after flip chip bonding, and heat radiation components such as a heat spreader and lid are mounted and cured. Is also possible.
以下実施例を用いて本発明を具体的に説明するが、これらに限定されるものではない。配合割合は重量部で示す。
[実施例1]
銀粉(A)として平均粒径8μm、最大粒径30μmのフレーク状銀粉(以下銀粉)を、熱硬化性樹脂(B)としてポリテトラメチレングリコールとイソホロンジイソシアネートと2−ヒドロキシメチルメタクリレートとの反応により得られたウレタンジメタクリレート化合物(分子量約1600、以下化合物B1)、1,4−シクロヘキサンジメタノールモノアクリレート(日本化成(株)製、CHDMMA、以下化合物B6)、2−メタクリロイルオキシエチルコハク酸(共栄社化学(株)製、ライトエステルHO−MS、以下化合物B7)、1,6−ヘキサンジオールジメタクリレート(共栄社化学(株)製、ライトエステル1、6HX、以下化合物B8)、ジクミルパーオキサイド(日本油脂(株)製、パークミルD、急速加熱試験における分解温度:126℃、以下重合開始剤)を、化合物(C)としてビス(トリメトキシシリルプロピル)ジスルフィド(ダイソー(株)製、カブラス2A、一般式(1)におけるnが2である成分が約58%(高速液体クロマトグラム(GPC)で測定し得られたチャートの面積比)、一般式(1)におけるnが4以上である成分が約10%(高速液体クロマトグラム(GPC)で測定し得られたチャートの面積比)、以下化合物C1)を、グリシジル基を有するカップリング剤(信越化学工業(
株)製、KBM−403E、以下化合物Z2)を表1のように配合し、3本ロールを用いて混練し、脱泡することで樹脂組成物を得た。配合割合は重量部である。得られた樹脂組成物を以下の方法により評価した。評価結果を表1に示す。
EXAMPLES The present invention will be specifically described below using examples, but is not limited thereto. The blending ratio is indicated by weight.
[Example 1]
Flake silver powder (hereinafter referred to as silver powder) having an average particle diameter of 8 μm and a maximum particle diameter of 30 μm is obtained as silver powder (A), and obtained by reaction of polytetramethylene glycol, isophorone diisocyanate and 2-hydroxymethyl methacrylate as thermosetting resin (B). Urethane dimethacrylate compound (molecular weight about 1600, hereinafter referred to as compound B1), 1,4-cyclohexanedimethanol monoacrylate (manufactured by Nippon Kasei Chemical Co., Ltd., CHDMMA, hereinafter referred to as compound B6), 2-methacryloyloxyethyl succinic acid (Kyoeisha Chemical) LIGHT ESTER HO-MS, hereinafter referred to as Compound B7), 1,6-hexanediol dimethacrylate (manufactured by Kyoeisha Chemical Co., Ltd.,
Co., Ltd., KBM-403E, hereinafter compound Z2) was blended as shown in Table 1, kneaded using three rolls, and defoamed to obtain a resin composition. The blending ratio is parts by weight. The obtained resin composition was evaluated by the following methods. The evaluation results are shown in Table 1.
[実施例2〜9]
以下の化合物を使用した。
ポリテトラメチレングリコールとマレイミド化酢酸の反応により得られたビスマレイミド化合物(分子量580、以下化合物B2)、シクロヘキサンジカルボン酸のジアリルエステルとポリプロピレングリコールとの反応により得られたジアリルエステル化合物(分子量1000、ただし原料として用いたシクロヘキサンジカルボン酸のジアリルエステルを約15%含む、以下化合物B3)、1,4−シクロヘキサンジメタノール/1,6−ヘキサンジオール(=3/1(重量比))と炭酸ジメチルの反応により得られたポリカーボネートジオールとメチルメタクリレートの反応により得られたポリカーボネートジメタクリレート化合物(分子量1000、以下化合物B4)、酸価108mgKOH/gで分子量4600のアクリルオリゴマーと2−ヒドロキシメタクリレート/ブチルアルコール(=1/2(モル比))との反応により得られたメタクリル化アクリルオリゴマー(分子量5000、以下化合物B5)、ビスフェノールAとエピクロルヒドリンとの反応により得られるジグリシジルビスフェノールA(エポキシ当量180、常温で液体、以下化合物B9)、クレジルグリシジルエーテル(エポキシ当量185、以下化合物B10)、ビスフェノールF(大日本インキ工業(株)製、DIC−BPF、水酸基当量100、以下化合物B11)、ジシアンジアミド(以下化合物B12)、2−メチルイミダゾールと2,4−ジアミノ−6−ビニルトリアジンとの付加物(四国化成工業(株)製、キュアゾール2MZ−A、以下化合物B13)、化合物(C)としてビス(トリメトキシシリルプロピル)ジスルフィド((ダイソー(株)製、カブラス2B、一般式(1)におけるnが2である成分が約86%、一般式(1)におけるnが4以上である成分が約2%、以下化合物C2)及び(デグサ社製、Si−75、一般式(1)におけるnが2である成分が約72%、一般式(1)におけるnが4以上である成分が約12%、以下化合物C3))を、表1のように配合し、実施例1と同様に3本ロールを用いて混練し、脱泡することで樹脂組成物を得た。配合割合は重量部である。得られた樹脂組成物を以下の方法により評価した。評価結果を表1に示す。
[Examples 2 to 9]
The following compounds were used:
Bismaleimide compound (molecular weight 580, hereinafter referred to as compound B2) obtained by reaction of polytetramethylene glycol and maleimidated acetic acid, diallyl ester compound (molecular weight 1000, obtained by reaction of diallyl ester of cyclohexanedicarboxylic acid and polypropylene glycol Reaction of dimethyl carbonate with the compound B3), 1,4-cyclohexanedimethanol / 1,6-hexanediol (= 3/1 (weight ratio)) containing about 15% of diallyl ester of cyclohexanedicarboxylic acid used as a raw material Polycarbonate dimethacrylate compound (molecular weight 1000, hereinafter referred to as compound B4) obtained by reaction of polycarbonate diol and methyl methacrylate obtained by the above, an acrylic oligomer having an acid value of 108 mgKOH / g and a molecular weight of 4600 And 2-hydroxymethacrylate / butyl alcohol (= 1/2 (molar ratio)) obtained by reaction of methacrylic acrylic oligomer (molecular weight 5000, hereinafter referred to as compound B5), bisphenol A and epichlorohydrin Bisphenol A (epoxy equivalent 180, liquid at normal temperature, hereinafter referred to as compound B9), cresyl glycidyl ether (epoxy equivalent 185, hereinafter referred to as compound B10), bisphenol F (manufactured by Dainippon Ink & Chemicals, Inc., DIC-BPF, hydroxyl equivalent 100) Compound B11), dicyandiamide (hereinafter Compound B12), an adduct of 2-methylimidazole and 2,4-diamino-6-vinyltriazine (manufactured by Shikoku Kasei Kogyo Co., Ltd., Curezol 2MZ-A, hereinafter Compound B13), Compound (C) as bis ( Rimethoxysilylpropyl) disulfide (Daiso Co., Ltd., Cabras 2B, about 86% of the component where n is 2 in the general formula (1), about 2% where n is 4 or more in the general formula (1) %, Hereinafter Compound C2) and (Degussa, Si-75, about 72% of the component where n is 2 in the general formula (1), about 12% where n is 4 or more in the general formula (1) Compound C3)) was blended as shown in Table 1 below, and kneaded using three rolls as in Example 1 and defoamed to obtain a resin composition. The blending ratio is parts by weight. The obtained resin composition was evaluated by the following methods. The evaluation results are shown in Table 1.
[比較例1〜3]
表1に示す割合で配合し実施例1と同様に樹脂組成物を得た。
なお比較例1ではビス(トリメトキシシリルプロピル)テトラスルフィド(ダイソー(株)製、カブラス4、一般式(1)におけるnが2である成分が約19%、一般式(1)におけるnが4以上である成分が約54%、以下化合物Z1)を、比較例3ではメルカプト基とアルコキシシラン基を有する化合物として3−メルカプトプロピルトリメトキシシラン(信越化学工業(株)製、KBM−803P、以下化合物Z3)を用いた。
得られた樹脂組成物を以下の方法により評価した。評価結果を表1に示す。
[Comparative Examples 1-3]
The resin composition was obtained in the same manner as in Example 1 by blending at the ratio shown in Table 1.
In Comparative Example 1, bis (trimethoxysilylpropyl) tetrasulfide (manufactured by Daiso Co., Ltd., Cabras 4, approximately 19% of the component where n is 2 in the general formula (1), and n in the general formula (1) is 4 The above component is about 54%, hereinafter referred to as Compound Z1). In Comparative Example 3, 3-mercaptopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-803P) is used as a compound having a mercapto group and an alkoxysilane group. Compound Z3) was used.
The obtained resin composition was evaluated by the following methods. The evaluation results are shown in Table 1.
評価方法
・粘度及び保存性:E型粘度計(3°コーン)を用い25℃、2.5rpmでの値を樹脂組成物作製後(初期)及び25℃48時間静置後に測定した。粘度が15〜25Pa・s、粘度の変化率が20%以下の場合を合格とした。粘度の単位はPa・sである。
・接着強度(1):表1に示す樹脂組成物作製後3時間以内に樹脂組成物を用いて6×6mmのシリコンチップを銀めっきした銅フレームにマウントし、175℃オーブン中30分硬化した。硬化後85℃、85%、72時間吸湿処理を行い、自動接着力測定装置を用いて260℃での熱時ダイシェア強度を測定した。260℃熱時ダイシェア強度が30N/チップ以上の場合を合格とした。接着強度の単位はN/チップである。
・接着強度(2):表1に示す樹脂組成物作製後25℃48時間静置した樹脂組成物を用
いた以外は接着強度(1)と同様に260℃での熱時ダイシェア強度を測定した。260℃熱時ダイシェア強度が30N/チップ以上の場合を合格とした。接着強度の単位はN/チップである。
Evaluation Method / Viscosity and Preservability: Using an E-type viscometer (3 ° cone), the values at 25 ° C. and 2.5 rpm were measured after preparing the resin composition (initial) and standing at 25 ° C. for 48 hours. The case where the viscosity was 15 to 25 Pa · s and the change rate of the viscosity was 20% or less was regarded as acceptable. The unit of viscosity is Pa · s.
Adhesive strength (1): Within 3 hours after preparation of the resin composition shown in Table 1, a 6 × 6 mm silicon chip was mounted on a silver-plated copper frame using the resin composition and cured in an oven at 175 ° C. for 30 minutes. . After curing, moisture absorption treatment was performed at 85 ° C., 85% for 72 hours, and the die shear strength during heating at 260 ° C. was measured using an automatic adhesive force measuring apparatus. The case where the die shear strength when heated at 260 ° C. was 30 N / chip or more was regarded as acceptable. The unit of adhesive strength is N / chip.
-Adhesive strength (2): After using the resin composition shown in Table 1, the die shear strength during heating at 260 ° C was measured in the same manner as in the adhesive strength (1) except that the resin composition was allowed to stand at 25 ° C for 48 hours. . The case where the die shear strength when heated at 260 ° C. was 30 N / chip or more was regarded as acceptable. The unit of adhesive strength is N / chip.
・弾性率:表1に示す樹脂組成物を用いて4×20×0.1mmのフィルム状の試験片を作製し(硬化条件120℃60分)、動的粘弾性測定機(DMA)にて引っ張りモードでの測定を行った。測定条件は以下の通りである。
測定温度:−100〜300℃
昇温速度:5℃/分
周波数:10Hz
荷重:100mN
25℃における貯蔵弾性率を弾性率とし5000MPa以下の場合を合格とした。弾性率の単位はMPaである。
・耐リフロー性(1):表1に示す樹脂組成物を用いて、下記のリードフレームとシリコンチップをオーブン中175℃30分間硬化し接着した。封止材料(スミコンEME−G620A、住友ベークライト(株)製)を用い封止し、半導体装置を作製した。この半導体装置を60℃、相対湿度60%、120時間吸湿処理した後、IRリフロー処理(260℃、10秒、3回リフロー)を行った。処理後の半導体装置を超音波探傷装置(透過型)により剥離の程度を測定した。ダイアタッチ部の剥離面積が10%未満の場合を合格とした。剥離面積の単位は%である。
半導体装置:QFP(14×20×2.0mm)
リードフレーム:銀めっきした銅フレーム
チップサイズ:6×6mm
・耐リフロー性(2):表1に示す樹脂組成物作製後25℃48時間静置した樹脂組成物を用いた以外は耐リフロー性(1)と同様に表1に示す樹脂組成物を用いて、剥離の程度を測定した。ダイアタッチ部の剥離面積が10%未満の場合を合格とした。
Elastic modulus: 4 × 20 × 0.1 mm film-like test pieces were prepared using the resin composition shown in Table 1 (curing conditions: 120 ° C. for 60 minutes), and using a dynamic viscoelasticity measuring machine (DMA) Measurements were made in pull mode. The measurement conditions are as follows.
Measurement temperature: -100 to 300 ° C
Temperature increase rate: 5 ° C / min Frequency: 10Hz
Load: 100mN
The storage elastic modulus at 25 ° C. was regarded as the elastic modulus, and the case of 5000 MPa or less was regarded as acceptable. The unit of elastic modulus is MPa.
Reflow resistance (1): Using the resin composition shown in Table 1, the following lead frame and silicon chip were cured and bonded in an oven at 175 ° C. for 30 minutes. Sealing was performed using a sealing material (Sumicon EME-G620A, manufactured by Sumitomo Bakelite Co., Ltd.) to manufacture a semiconductor device. This semiconductor device was subjected to moisture absorption treatment at 60 ° C. and 60% relative humidity for 120 hours, and then IR reflow treatment (260 ° C., 10 seconds, 3 times reflow) was performed. The degree of peeling of the treated semiconductor device was measured by an ultrasonic flaw detector (transmission type). The case where the peeling area of the die attach part was less than 10% was regarded as acceptable. The unit of the peeled area is%.
Semiconductor device: QFP (14 x 20 x 2.0 mm)
Lead frame: Silver plated copper frame Chip size: 6x6mm
-Reflow resistance (2): The resin composition shown in Table 1 was used in the same manner as the reflow resistance (1) except that the resin composition which was allowed to stand at 25 ° C for 48 hours after the resin composition shown in Table 1 was used was used. The degree of peeling was measured. The case where the peeling area of the die attach part was less than 10% was regarded as acceptable.
本発明の樹脂組成物は、良好な室温での保存性を有しかつ高接着性で応力緩和特性にも優れるため、ダイアタッチペーストまたは放熱部材接着用材料として使用した場合、半導体素子のダメージが少なく、また得られた半導体装置は耐リフロー性に優れており、その結果高信頼性の半導体装置を得ることができる。 Since the resin composition of the present invention has good storage stability at room temperature and has high adhesiveness and excellent stress relaxation characteristics, when used as a die attach paste or a material for adhering heat dissipation members, damage to the semiconductor element is caused. The obtained semiconductor device is excellent in reflow resistance, and as a result, a highly reliable semiconductor device can be obtained.
Claims (4)
−(S)n− (1)
nは1〜10の整数
(A) a silver powder, (B) a thermosetting resin, (C) a resin composition containing at least one compound having at least one bond represented by the general formula (1) and at least one alkoxysilyl group, 50% or more of the compound (C) having one bond represented by the general formula (1) and at least one alkoxysilyl group is a compound wherein n in the general formula (1) is 2. .
-(S) n- (1)
n is an integer from 1 to 10
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JP2007280696A JP5266719B2 (en) | 2007-10-29 | 2007-10-29 | Resin composition and semiconductor device produced using resin composition |
PCT/JP2008/069356 WO2009057530A1 (en) | 2007-10-29 | 2008-10-24 | Adhesive composition for semiconductor and semicondutor device produced using the adhesive composition |
CN200880008769.0A CN101636463B (en) | 2007-10-29 | 2008-10-24 | Adhesive composition for semiconductor and semicondutor device produced using the adhesive composition |
KR1020097019988A KR101195693B1 (en) | 2007-10-29 | 2008-10-24 | Adhesive composition for semiconductor and semiconductor device produced using the adhesive composition |
TW097141643A TWI389997B (en) | 2007-10-29 | 2008-10-29 | A semiconductor adhesive composition, and a semiconductor device manufactured by the same |
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JP2011052043A (en) * | 2009-08-31 | 2011-03-17 | Sumitomo Bakelite Co Ltd | Resin composition and semiconductor device produced using resin composition |
JP2011073405A (en) * | 2009-10-01 | 2011-04-14 | Sumitomo Bakelite Co Ltd | Method of manufacturing laminated structure |
JP2011082368A (en) * | 2009-10-08 | 2011-04-21 | Sumitomo Bakelite Co Ltd | Resin composition, and semiconductor device fabricated by using the same |
JP2011080024A (en) * | 2009-10-09 | 2011-04-21 | Sumitomo Bakelite Co Ltd | Resin composition and semiconductor device manufactured by using the resin composition |
JP2017171844A (en) * | 2016-03-25 | 2017-09-28 | 住友ベークライト株式会社 | Paste-like adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for bonding heat dissipation plate |
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JP2007262243A (en) * | 2006-03-28 | 2007-10-11 | Sumitomo Bakelite Co Ltd | Resin composition and semiconductor device manufactured using resin composition |
JP2009191214A (en) * | 2008-02-18 | 2009-08-27 | Sumitomo Bakelite Co Ltd | Thermally conductive resin composition, adhesive layer, and semiconductor device manufactured using them |
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JP2011037981A (en) * | 2009-08-10 | 2011-02-24 | Sumitomo Bakelite Co Ltd | Resin composition and semiconductor device produced using resin composition |
JP2011052043A (en) * | 2009-08-31 | 2011-03-17 | Sumitomo Bakelite Co Ltd | Resin composition and semiconductor device produced using resin composition |
JP2011073405A (en) * | 2009-10-01 | 2011-04-14 | Sumitomo Bakelite Co Ltd | Method of manufacturing laminated structure |
JP2011082368A (en) * | 2009-10-08 | 2011-04-21 | Sumitomo Bakelite Co Ltd | Resin composition, and semiconductor device fabricated by using the same |
JP2011080024A (en) * | 2009-10-09 | 2011-04-21 | Sumitomo Bakelite Co Ltd | Resin composition and semiconductor device manufactured by using the resin composition |
JP2017171844A (en) * | 2016-03-25 | 2017-09-28 | 住友ベークライト株式会社 | Paste-like adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for bonding heat dissipation plate |
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US11739238B2 (en) | 2016-09-23 | 2023-08-29 | Nichia Corporation | Electrically conductive adhesive and electrically conductive material |
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CN101636463B (en) | 2012-07-18 |
JP5266719B2 (en) | 2013-08-21 |
CN101636463A (en) | 2010-01-27 |
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