JP2009104841A - Sealing device, sealing method, electronic device, and manufacturing method of electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sealing device and a sealing method capable of restraining generation of deformation or residual stress even in case frit is melted by irradiation of laser light, as well as an electronic device and a manufacturing method of the same. <P>SOLUTION: The sealing device is provided with a laser light source, a retention means for retaining a treated object, an irradiating means provided in opposition to the retention means for laser light from the laser light source to be guided in, and a movement means for moving a relative position of the retention means and the irradiating means. The irradiating means is provided with an optical means condensing linear laser light on a frit fitted at the treated object. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a sealing device, a sealing method, an electronic device, and a method for manufacturing an electronic device.

  Flat panel displays such as organic EL (Electroluminescence) displays, liquid crystal displays, plasma displays, surface-conduction electron-emitting device displays (SED), semiconductor devices, discharge tubes, cathode-ray tubes, etc. Etc. are hermetically sealed.

  For example, in a flat panel display, two glass substrates are opposed to each other in parallel at a predetermined interval, and the peripheral edges of the two glass substrates are sealed so that the electrodes and fluorescence formed inside the glass substrates are sealed. The body layer and the like are hermetically sealed.

  In such hermetic sealing, resin sealing with an ultraviolet curable resin or the like is performed, but moisture in the air may pass through the sealing portion. For this reason, sealing with a frit having higher airtight reliability is performed for those that are liable to be deteriorated by moisture or the like (for example, an organic EL display).

  Here, in sealing with a frit, a technique has been proposed in which a laser beam is irradiated from the surface of a glass substrate toward the frit to melt-bond (for example, see Patent Document 1). In addition, a technique for irradiating a laser beam having a beam width equal to or larger than the frit width so that the frit is sufficiently melted has been proposed (see Patent Document 2).

However, in the techniques disclosed in Patent Documents 1 and 2, since the frit is melted by irradiating the laser beam in a dot shape, a temperature difference is likely to occur, and deformation of the glass substrate and residual stress occur. The glass substrate may be broken.
JP-T-2006-524419 Japanese Patent Laid-Open No. 2007-200839

  The present invention provides a sealing device, a sealing method, an electronic device, and a method for manufacturing an electronic device that can suppress the occurrence of deformation and residual stress even when the frit is melted by laser light irradiation. .

  According to one aspect of the present invention, a laser light source, a holding unit that holds an object to be processed, an irradiation unit that is provided opposite to the holding unit and into which laser light from the laser light source is introduced, and the holding And a moving means for moving the relative position of the irradiating means, and the irradiating means includes an optical means for condensing linear laser light on a frit provided on the object to be processed. There is provided a sealing device including the sealing device.

  According to another aspect of the present invention, a laser light source, a holding unit that holds an object to be processed, and an irradiation unit that is provided to face the holding unit and into which the laser light from the laser light source is introduced. And a moving means for moving relative positions of the holding means and the irradiation means, and the back metal irradiation means irradiates the frit provided on the object to be processed with a linear laser beam. There is provided a sealing device characterized by having a scanning means.

  According to another aspect of the present invention, linear laser light is condensed on the frit provided between the facing members using optical means, and the frit is melted. A sealing method is provided.

  According to another aspect of the present invention, the frit provided between the facing members is irradiated with a linear laser beam using a scanning unit to melt the frit. A stopping method is provided.

  According to another aspect of the present invention, there is provided an electronic device including the frit sealed using the sealing device described above.

  According to another aspect of the present invention, there is provided an electronic device manufacturing method characterized by sealing the frit by the above-described sealing method.

  According to the present invention, there is provided a sealing device, a sealing method, an electronic device, and an electronic device manufacturing method capable of suppressing the generation of deformation and residual stress even when frit is melted by laser light irradiation. Provided.

Hereinafter, embodiments of the present invention will be illustrated with reference to the drawings. In addition, in each drawing, the same code | symbol is attached | subjected to the same component and detailed description is abbreviate | omitted suitably.
For convenience of explanation, a case where the organic EL display is sealed with a frit will be described as an example.
FIG. 1 is a schematic perspective view for illustrating a main part of a sealing device according to an embodiment of the present invention. FIG. 2 is a schematic perspective view for illustrating a sealing device according to a comparative example. Note that arrows XYZ in FIG. 2 indicate three directions orthogonal to each other, XY indicates a horizontal direction, and Z indicates a vertical direction.

First, the sealing device according to the comparative example will be described.
The sealing device 100 shown in FIG. 2 has been studied in the course of the inventor's invention.

  The sealing device 100 includes a sealing unit 110, a laser light source unit 120, and a control unit 130. The sealing device 100 is used in, for example, a manufacturing process of an organic EL display, and is irradiated with laser light toward a frit provided between two opposing glass substrates G1 and G2, and is defined by the frit. The space is hermetically sealed. At this time, the two glass substrates G1 and G2 facing each other can be superposed in an inert gas atmosphere such as nitrogen gas or argon gas, and the laser can be irradiated toward the frit in that state. By doing so, an organic EL element or the like provided in the space defined by the frit can be enclosed in a sealed space of an inert gas atmosphere. In such a case, for example, the sealing portion 110 may be housed in an airtight container such as a chamber, and the inside of the chamber may be an inert gas atmosphere.

The sealing unit 110 is provided with a gantry 111, an XY table 112 provided on the upper surface of the gantry 111, and a stand 113.
The XY table 112 has a driving portion 112a having a mounting portion (not shown) provided on the upper surface of the gantry 111 and capable of reciprocating in the Y direction, and a driving portion 112a provided on the mounting portion (not shown) of the driving portion 112a. The drive part 112b which has the attachment part which does not carry out is provided. A holding table 112c, which is a holding means for holding the object to be processed, is provided on a mounting portion (not shown) of the driving unit 112b. In addition, the holding table 112c includes, for example, an electrostatic chuck or the like, and can hold the lower glass substrate G2 of the two opposing glass substrates with electrostatic force or the like.

Therefore, the XY table 112 serves as a moving unit for moving the relative positions of the holding table 112c serving as a holding unit and laser heads 115 and 115a serving as laser light irradiation units described later.
A means for holding the peripheral edge of the upper glass substrate G1 may be provided so that the positions of the two glass substrates facing each other do not shift.
The stand 113 is provided with a holder 114, and a plurality of laser heads 115 are attached to the holder 114 at predetermined intervals. Further, a spare laser head 115a is provided so as to cope with a change in the number of irradiation targets. The distance between the laser heads 115 and 115a attached to the holder 114 can be adjusted according to the pitch of the irradiation target. Further, the positions of the laser heads 115 and 115 a in the Z direction can be individually adjusted by the holder 114.

The laser heads 115 and 115a, which are laser light irradiation means, include a condensing lens 116 (see FIG. 3) inside, and irradiate the frit with laser light transmitted and introduced from a laser light source unit 120 described later. To do.
FIG. 3 is a schematic cross-sectional view for illustrating optical means provided in the laser head.
The laser heads 115 and 115a are provided with a condensing lens 116 for condensing the laser light transmitted and introduced from the laser light source unit 120 into a dotted circular spot. For this reason, the laser beam can be focused in a dot shape on the frit to be irradiated.
The laser light source unit 120 may include a semiconductor laser unit 121, for example. A light receiving end 122a of an optical fiber 122 is incorporated in the semiconductor laser unit 121, and an emission end 122b of the optical fiber 122 is incorporated in the laser heads 115 and 115a. That is, the laser beam emitted from the semiconductor laser unit 121 can be transmitted and introduced to the laser heads 115 and 115 a via the optical fiber 122. The light source of the laser is not limited to the semiconductor laser and can be changed as appropriate. However, a laser having a wavelength of about 800 nm to 1200 nm that is easily absorbed by the frit is preferable. Examples of such a laser include a semiconductor laser having a wavelength of 810 nm and a Nd-YAG laser having a wavelength of 1064 nm.

Further, the laser light source unit 120 includes a power source (not shown) for supplying current to the semiconductor laser unit 121, output adjusting means (not shown) for adjusting the laser output to a desired value, and switching the laser ON / OFF. A laser output switching means (not shown) can be provided as appropriate.
The control unit 130 controls the laser light source unit 120 (for example, emission and stop of laser light to desired laser heads 115 and 115a (output switching), output adjustment, etc.) and operation control of the XY table 112.

  In the sealing device 100 configured as described above, the laser light emitted from the semiconductor laser unit 121 by controlling the laser light source unit 120 by the control unit 130 is transmitted to the laser head 115 via the optical fiber 122, be introduced. Then, the light is irradiated so as to be focused in a dot shape on the frit by the condensing lens 116 provided in the laser head 115.

  On the other hand, by controlling the operation of the XY table 112 by the control unit 130, the irradiation position of the laser light is moved in a horizontal plane so that the locus of the heating position draws a closed loop. Therefore, the frit is heated and melted by the laser light irradiated on the frit, and the glass substrates G1 and G2 are joined in an airtight manner, and a space defined by the frit is formed therein. A region drawn by the frit becomes a pixel region.

Here, in the sealing device 100, the laser light is condensed in a dot shape on the frit by the condenser lens 116. For this reason, the glass substrate G1 is locally heated, and a temperature distribution may be generated in the surface of the glass substrate G1, or a large temperature difference may occur between the glass substrate G2 and the glass substrate G2.
FIG. 4 is a schematic diagram for illustrating the influence of the temperature difference.
4A and 4B are schematic cross-sectional views for illustrating the influence due to the temperature difference. 4A shows the start of laser light irradiation (sealing start), and FIG. 4B shows the vicinity of the end of laser light irradiation (end of sealing). That is, as shown in FIG. 4A, the laser beam irradiation is started at the left end of the frit F (sealing is started), and the irradiation position (sealing position) is moved to the right while FIG. As shown, the irradiation of the laser beam is finished (sealing is finished) at the right end of the frit F.

As described above, in the sealing device 100, since the laser light is focused on the frit F in the form of dots, the upper glass substrate G1 is locally heated. Therefore, it is difficult for the temperature of the lower glass substrate G2 to rise, a large temperature difference occurs between the glass substrate G1 and the glass substrate G2, and a difference occurs between the extension dimensions of the upper and lower glass substrates. The difference in stretch dimension increases with the progress of laser light irradiation (sealing). As shown in FIG. 4 (b), a large dimension is formed in the vertical direction near the end of laser light irradiation (at the end of sealing). Sealing is performed with the difference still occurring.
Such a difference in elongation dimension may cause a positional shift or warpage of the upper and lower glass substrates, and may cause a decrease in the performance of the organic EL display.

FIG. 4C is a schematic cross-sectional view for illustrating the effect when the thickness of the frit varies or there is a joint.
In FIG. 4C, there is an unsealed frit F3 between the sealed frit F1 on the left side in the drawing and the sealed frit F2 on the right side, and the frit F3 is irradiated with laser light. Sealing is performed. That is, the case where the frit has a joint portion and the thickness of the left frit F1 is thicker than the thickness of the frit F2 on the right side of the joint is illustrated.

In such a case, if the frit F3 is melted and sealed by the laser beam condensed in a spot shape, in addition to the above-described temperature difference, the frit thickness difference is also affected. As a result, as shown in FIG. 4D, sealing failure (sealing of sealing) may occur near the end of laser light irradiation (sealing end).
Such a sealing failure (sealing of the sealing) may cause deterioration of the organic element due to moisture or the like.

FIG. 5 is a schematic diagram for illustrating the influence of residual stress.
FIG. 5A is a schematic plan view of a corner portion of the frit F, and FIG. 5B is a cross-sectional view taken along the line AA in FIG.
As shown in FIGS. 5A and 5B, tensile stress acts on the glass substrates G <b> 1 and G <b> 2, and compressive stress corresponding to the frit F acts. As described above, by irradiating the frit F with the laser beam condensed in a spot shape, the glass substrate G1 is locally heated, and a temperature distribution is generated in the surface of the glass substrate G1, or the glass substrate A large temperature difference may occur with G2. For this reason, the generated residual stress is increased accordingly.

In this case, a large residual stress is generated in the corner portion of the frit F, and the residual stress becomes larger due to stress concentration as the radius of curvature of the corner portion becomes smaller. As a result, as shown in FIG.5 (c), there exists a possibility that the crack C may generate | occur | produce in a glass substrate in a corner part.
The occurrence of such a crack C may cause a sealing failure and cause deterioration of the organic element due to moisture or the like.
Further, if sealing is performed using a laser beam condensed in a spot shape on the frit F, the processing time (sealing time) becomes long, which causes a reduction in production efficiency.

As a result of the study, the present inventor has found that if the sealing is performed using the laser beam condensed linearly on the frit F, the influence of the temperature difference, the residual stress, and the like can be suppressed. Obtained.
Next, returning to FIG. 1, the main part of the sealing device according to the embodiment of the present invention will be exemplified. FIG. 1A is a schematic perspective view for illustrating the irradiation of the laser beam condensed linearly on the frit F, and FIG. 1B is a schematic view for illustrating the irradiation state to the frit F. It is a perspective view.
In addition, since the technology of the sealing device 100 illustrated in FIG. 2 can be applied to the parts other than the laser light irradiation part shown in FIG. 1, the description of the configuration and operation other than the laser light irradiation part is omitted. To do. Also, the same parts as those described in FIG. 2 are denoted by the same reference numerals, and the description thereof is also omitted.

  As shown in FIG. 1A, the sealing device 1 is provided with a plurality of laser heads 15 that can condense laser light linearly on the frit F. The laser heads 15 are provided in two rows so as to be symmetric with respect to a plane perpendicular to the irradiation surface, and an interval is provided between adjacent laser heads 15. Therefore, the position of the laser head 15 can be easily adjusted, and the irradiated laser beam is connected on the frit F without a gap, so that one long linear irradiation is performed as shown in FIG. Can be done. Further, by adjusting the interval and height between the laser heads 15, it is possible to irradiate an intermittent irradiation range in accordance with the shape of the frit F.

  Further, by appropriately combining the laser heads 15, for example, four sides of a loop-shaped frit F having a rectangular shape can be collectively irradiated to perform sealing. The shape of the loop is not limited to a rectangle, and may be an arbitrary shape.

FIG. 6 is a schematic view for illustrating an optical means for condensing laser light on the frit F in a linear shape.
FIG. 6A is a schematic diagram for illustrating a case where laser light is condensed linearly on the frit F using the kaleidoscope 2.

  As shown in FIG. 6A, the laser head 15 is provided with a kaleidoscope 2 and condenser lenses 3 and 4. The kaleidoscope 2 has a rectangular shape on the incident side and a desired elongated rectangular shape on the emission side, and is formed in a cylindrical shape that continuously changes between them, and the inner surface of the kaleidoscope 2 is such that the laser beam is multiplexed and diffusely reflected. It is in the surface state. The incident side of the kaleidoscope 2 is not limited to a rectangular shape, and may be, for example, a circle or an ellipse. Moreover, it is not necessarily restricted to a hollow structure, For example, it can also consist of transparent bodies, such as quartz and glass.

The laser light incident on the incident side of the kaleidoscope 2 is repeatedly reflected on the inner surface of the kaleidoscope 2, and is emitted from the exit side to the exit side shape (linear shape). A linear laser beam can be condensed on the frit F by the condenser lenses 3 and 4 provided on the emission side of the kaleidoscope 2.
FIG. 6B is a schematic diagram for illustrating a case where laser light is condensed linearly on the frit F using a cylindrical lens. In addition, what is illustrated in FIG. 6B illustrates a case where a long linear laser beam is condensed using a plurality of laser light sources.

  As shown in FIG. 6B, the laser head 15 includes a cylindrical lens 5 that smoothes the incident laser light into a linear shape, and a condensing lens 6 that superimposes the laser light introduced adjacently. The cylindrical lenses 7a and 7b for converting the laser light from the condensing lens 6 into linear laser light and the condensing lens for condensing the laser light from the cylindrical lenses 7a and 7b on the frit F. 8 are provided.

  The laser light incident on the cylindrical lens 5 is converted into linear light and is superposed by the condenser lens 6, and becomes a long linear laser light via the cylindrical lenses 7 a and 7 b and the condenser lens 8, and is collected on the frit F. To be lighted.

Prior to melting the frit F, the irradiated surface can be preheated. FIG. 7 is a schematic diagram for illustrating preheating of the irradiated surface.
FIG. 7A is a schematic graph for illustrating the case where the irradiation surface is preheated by adjusting the output of the semiconductor laser unit 121.
As shown in FIG. 7A, within a predetermined time after the start of irradiation, the output of the semiconductor laser unit 121 is lowered to preheat the irradiated surface, and after the temperature of the glass substrate is raised, the semiconductor laser unit 121 is increased. The frit F can be melted by increasing the output of. Note that the irradiation surface can be pre-heated by intermittently irradiating the laser or shortening the irradiation time.

FIG. 7B is a schematic diagram for illustrating the case where the irradiation surface is preheated by adjusting the beam size.
As shown in FIG. 7B, within a predetermined time after the start of irradiation, the laser size was lowered to increase the beam size as in 9b, and the irradiated surface was preheated to increase the temperature of the glass substrate. Later, by reducing the beam size as in 9a, the laser fluence can be increased and the frit F can be melted. In this case, the beam size can be adjusted, for example, by adjusting the distance between the laser head 15 and the irradiation surface.

FIG. 7C is a schematic graph for illustrating the effect of preheating.
As shown in FIG. 7C, preheating can suppress the time of high-power laser irradiation and suppress the temperature rise of the organic element portion (pixel region) surrounded by the frit F. it can. Moreover, generation | occurrence | production of a residual stress can be suppressed by raising the temperature of a glass substrate gradually.

  In this case, for example, the holding table 112c may be provided with heating means to perform preheating, but the entire glass substrate is heated, so that a lot of energy is required, and the glass substrate by preheating is also used. The elongation dimension of also increases. On the other hand, according to the present embodiment, only the portion to be welded by melting can be preliminarily heated, so that energy consumption can be greatly reduced, and the glass substrate by preheating can be reduced. The elongation dimension can also be reduced.

  As described above, according to the present embodiment, sealing can be performed using the laser light focused linearly on the frit F. Therefore, local heating of the glass substrate G1 is suppressed, the temperature distribution of the upper glass substrate G1 can be made uniform, and the temperature difference between the upper glass substrate G1 and the lower glass substrate G2 Can be reduced.

  As a result, it is possible to reduce the difference in elongation between the upper and lower glass substrates, and to suppress the positional deviation, warpage, and sealing failure at the joint between the upper and lower glass substrates. Further, since the residual stress can be reduced, it is possible to prevent the occurrence of the crack C of the glass substrate at the corner portion of the frit F. Further, since the entire circumference of the long frit F or the loop-shaped frit F can be sealed at once, the production efficiency can be improved.

  Further, if the irradiation surface is preliminarily heated before the frit F is melted, the temperature rise of the organic element portion (pixel region) surrounded by the frit F and the occurrence of residual stress can be suppressed. Moreover, the energy for preheating can be reduced significantly and the elongation dimension of the glass substrate by preheating can also be made small.

FIG. 8 is a schematic perspective view for illustrating a main part of a sealing device according to another embodiment of the present invention. 8A is a schematic perspective view for illustrating the configuration of the laser head, and FIG. 8B is a schematic perspective view for illustrating the state of scanning of the laser light.
In the present embodiment, linear irradiation is performed on the frit F by scanning with laser light. That is, the laser beam is scanned so as to perform pseudo linear focusing on the frit F.

  As shown in FIG. 8A, the laser head 15a is provided with a condenser lens 10, a reflection mirror 11, a galvano mirror 12 as a scanning means, and an fθ lens 13. The fθ lens 13 is a lens designed so that the scanning speed of a light spot that passes through the lens and is perpendicularly incident on the irradiation surface is always constant regardless of the incident position on the lens. Therefore, if the fθ lens 13 is used, it is possible to easily perform scanning at a constant speed.

In such a laser head 15a, the laser light emitted from the semiconductor laser unit 121 is guided to the emission end 122b through the optical fiber 122, and emitted from the emission end 122b toward the condenser lens 10. The laser light that has entered the condenser lens 10 is condensed and enters the galvanometer mirror 12 via the reflection mirror 11. Then, as shown in FIG. 8B, the laser light is scanned linearly by oscillating the galvanometer mirror 12 serving as scanning means at high speed. The laser beam scanned linearly by the galvanometer mirror 12 is irradiated onto the frit F that is the irradiation surface through the fθ lens 13. At this time, scanning at a constant speed is performed by the action of the fθ lens 13. Then, the entire circumference of the loop frit F can be sealed by moving the relative position with the glass substrates G1 and G2 by the XY table 112.
In this case, the control related to the laser beam scanning such as the scanning speed and the scanning range can be performed by the control unit 130 described above.

  Although the galvanometer mirror 12 has been exemplified as the scanning means, the present invention is not limited to this, and an apparatus capable of scanning with laser light can be appropriately selected. For example, a polygon mirror rotation method (polygon mirror) may be used.

  Here, it is also possible to seal the entire circumference of the loop frit F by irradiating a high-power laser in a dot shape and moving the positions of the glass substrates G1 and G2 at high speed by the XY table 112. . However, by doing so, the heating time per unit area is shortened and the sealing property may be deteriorated. That is, if the high-power laser is irradiated in the form of dots and the glass substrates G1 and G2 are moved at high speed, local rapid heating and rapid cooling may occur in the irradiated portion, causing cracks and increased welding variations. There is.

  In this case, the heating time per unit area can be increased by increasing the circular beam size, but the energy that is wasted increases, and the organic element portion (pixel region) surrounded by the frit F is increased. New problems such as an increase in temperature and an increase in residual stress may occur.

  On the other hand, according to the present embodiment, linear laser light can be irradiated onto the frit F by scanning the laser light. That is, it is possible to condense the linear laser beam on the frit F by scanning the laser beam. Therefore, even if the moving speed of the glass substrates G1 and G2 is increased, the heating time per unit area can be increased because of linear irradiation. As a result, sealing properties can be improved. Further, since the irradiation is linear, less energy is wasted, the temperature increase of the organic element portion (pixel region) surrounded by the frit F can be suppressed, and the occurrence of residual stress can also be suppressed. .

FIG. 9 is a schematic perspective view for illustrating the form of irradiation.
FIG. 9A is a schematic perspective view for illustrating a case where laser beams are simultaneously irradiated from a plurality of laser heads toward a plurality of loop-shaped frits F, and FIG. 9B is a diagram illustrating a plurality of lasers. FIG. 6 is a schematic perspective view for illustrating a case where laser light is simultaneously irradiated from a head toward a large loop-shaped frit F.

  As shown in FIGS. 9A and 9B, if the laser is irradiated simultaneously from a plurality of laser heads, the processing time can be shortened, so that the production efficiency can be improved. In addition, by changing the number of laser heads and the scanning range, various irradiation modes (multiple products) can be quickly handled. Note that the number and arrangement of the laser heads are not limited to those shown in the drawings, and can be changed as appropriate, for example, in a plurality of rows. Also, the irradiation timing does not have to be the same, and can be changed as appropriate.

FIG. 10 is a schematic diagram for illustrating the form of heat input control on the irradiation surface.
FIG. 10A is a schematic diagram for illustrating the case where heat input control is performed by controlling the scanning speed, and FIG. 10B is for illustrating the case where heat input control is performed by controlling the laser output. FIG. In addition, E1-E5 in a figure represents heat input distribution. Moreover, the arrow in a figure represents the moving direction of the irradiation position.
FIG. 10C is a schematic diagram for illustrating heat input control in the corner portion. Of the arrows in the figure, the one drawn on the frit F represents the laser scanning direction, and the one drawn along the outer periphery of the frit F represents the sealing direction (moving direction). Yes.

  In the case shown in FIG. 10A, heat input control is performed by controlling the scanning speed. That is, the amount of heat input can be increased by reducing the scanning speed, and the amount of heat input can be decreased by increasing the scanning speed. For example, if the scanning speed is made constant, the amount of heat input can be made constant as shown by E1 in the figure. Further, if the scanning speed is slowed at both ends of the irradiated portion, the heat input distribution as shown by E2 in the figure can be obtained, and if the scanning speed is slowed at the right end of the irradiated portion, it is represented by E3 in the figure. It is possible to obtain a distribution of heat input. It should be noted that the heat input control can be performed by controlling the moving speed of the XY table 112 instead of controlling the scanning speed or by controlling the scanning speed.

In the case shown in FIG. 10B, heat input control is performed by controlling the laser output. That is, if the laser output is increased, the amount of heat input can be increased, and if the laser output is decreased, the amount of heat input can be decreased. For example, if the laser output is increased, the amount of heat input can be increased as indicated by E4 in the figure, and if the laser output is decreased, the amount of heat input can be reduced as indicated by E5 in the figure.
And, by controlling the amount of heat input to the frit F so that the heat distribution in the vicinity of the frit F is within a predetermined range, the occurrence of residual stress and cracks is suppressed, and the sealing performance and productivity are improved. Can do.

  For example, as shown in FIGS. 10A and 10B, control is performed to increase the amount of heat input at the start of sealing (the left end side in each figure), and the temperatures of the glass substrates G1 and G2 are increased. In the vicinity of the central portion, the heat distribution can be made within a predetermined range by performing control while suppressing the amount of heat input.

Further, if the frit F has a direction changing portion such as a corner in the shape of the frit F, the heat distribution becomes non-uniform. That is, the inner peripheral side of the direction changing portion such as a corner is often a closed space, and the inner temperature tends to rise. As a result, thermal stress increases and cracks tend to enter.
Therefore, as shown in FIG. 10 (c), the heat input amount of the frit F5 at the corner portion is made smaller than the heat input amount of the frit F4 at the corner inlet portion, and the heat input amount of the frit F6 at the corner outlet portion is reduced. If control is performed so as to be equivalent to the amount of heat, the heat distribution can be set within a predetermined range, so that the occurrence of cracks and the like can be suppressed.

Further, “temporary fixing” can be performed by locally performing heat input control.
FIG. 11 is a schematic diagram for illustrating temporary fixing.
FIG. 11A shows a case where the scanning range is localized and the irradiated portion is “temporarily fixed”, and FIG. 11B shows the case where the scanning range is expanded after “temporarily fixing” and the frit F is melted. Represents the case.
FIG. 11C is a diagram schematically showing the state of “temporarily fixing” and frit F melting. Of the frit F in the figure, F7 is a sealed portion, F8 is a portion during laser irradiation, and F9 is an unsealed portion.

  In the case shown in FIG. 11 (c), local irradiation is performed on the right end side of the irradiated portion to perform “temporary fixing (local welding)”, and then the scanning range is widened to increase the overall size of the frit F8. Melting is performed. That is, after the scanning range of the scanning means is narrowed and the frit F8 is locally melted, the scanning range is widened and the entire frit F8 is melted.

  As described above, if “temporary fixing” is performed before the entire frit F is melted, misalignment or warpage due to elongation of the glass substrate or the like can be suppressed. Therefore, sealing with excellent positional accuracy can be performed. It should be noted that the position and number of “temporary fixing” are not limited to those shown in the figure, and can be changed as appropriate.

  Here, when the frit F is irradiated from a plurality of irradiation means, discontinuous portions of laser irradiation may occur between the irradiated portions or in the corner portions. In such a case, it is difficult to eliminate the discontinuity even if the connection is performed by performing precise scanning control or the connection is performed by performing precise laser output control.

  As a result of the study, the present inventor has provided a connection range between the irradiation ranges of the laser beams irradiated to the frit F from a plurality of irradiation means, and the switching timing of the laser output in the connection range (ON / OFF timing of the laser output) ) Is continuously shifted, the heat input in the connecting range is connected smoothly, and it has been found that continuous sealing can be performed.

FIG. 12 is a schematic diagram for illustrating continuous sealing between irradiated portions.
FIG. 12A is a schematic diagram for illustrating discontinuous portions between the irradiated portions, and FIG. 12B is a diagram in which the laser output switching timing (laser output ON / OFF timing) is continuous. It is a schematic graph for exemplifying the case where it changes so that the amount of heat input in a connection range may be connected gently by shifting.
Note that the upper diagram in FIG. 12A is a diagram schematically showing the left and right irradiation portions, and the lower broken line diagram schematically shows the timing of switching (ON / OFF) between the left and right laser outputs. FIG. In this case, the laser output is turned on (irradiation) when the line is on the upper side, and the laser output is turned off (stopped) when the line is on the lower side.

  Further, the upper schematic graph of FIG. 12B schematically shows the heat input amount of the left and right irradiated portions, and the upper diagram shows the heat input amount of the left irradiated portion and the lower diagram. Represents the amount of heat input of the irradiated part on the right side. Further, the lower schematic graph of FIG. 12B is a diagram schematically showing the switching timing (ON / OFF) of the left and right laser outputs. In this case, the laser output is turned on (irradiation) when the line is on the upper side, and the laser output is turned off (stopped) when the line is on the lower side.

  As shown in FIG. 12A, in the left irradiation portion and the right irradiation portion in the figure, if irradiation is performed in the same scanning range n times, a discontinuous portion P1 of laser irradiation is provided between the irradiation portions. Occurs. In such a case, if the precise scanning control is performed, the range of the discontinuous portion P1 can be narrowed. However, the discontinuous portion P1 cannot be eliminated, and precise scanning control is difficult.

In this case, if the left and right irradiated portions are overlapped with each other, there is a possibility that new problems such as generation of cracks due to excessive heat input at the portions may occur. Here, if precise laser output control can be performed, it is considered that continuous sealing can be performed by gradually changing the amount of heat input in the overlapping portion. However, it is difficult to perform precise laser output control while performing high-speed scanning.
Therefore, it is difficult to eliminate discontinuities by precise scanning control and precise laser output control.

  On the other hand, as shown in FIG. 12B, a connection range P2 portion is provided so that the laser output switching (ON / OFF) timing of the left irradiation portion and the right irradiation portion in the drawing is continuously shifted. By doing so, the amount of heat input in the connecting range P2 can be changed so as to connect gently, so that continuous sealing can be performed. Further, since control is only required for switching (ON / OFF) of the laser output, it can be easily performed even during high-speed scanning.

  In the example illustrated in FIG. 12B, the OFF (stop) timing of the laser output is continuously shifted. In this case, if the number of positions where the laser output is turned off is increased, the amount of heat input can be changed substantially linearly as shown in the upper diagram of FIG.

  Moreover, the heat input amount in the connection range P2 portion is the sum of the heat input amounts of the left and right irradiation portions. Therefore, the sum of the heat input amounts is made substantially constant by turning off both the left and right laser outputs at a predetermined position in the connection range P2. Therefore, it is possible to reduce the difference in heat input between the connection range P2 portion and the left and right irradiation portions.

  That is, if the laser outputs adjacent to each other at a predetermined position in the connection range can be switched together, the amount of heat input in the connection range can be made substantially constant, so the amount of heat input between the connection range portion and the left and right irradiation portions can be reduced. The difference can be reduced.

  Thus, if the connection range P2 part is provided and the laser output switching (ON / OFF) timing is continuously shifted, the amount of heat input can be changed so as to connect smoothly, so that the irradiated parts overlap. However, it is not heated too much and there is no risk of cracks. In addition, precise scanning control and the like can be eliminated.

FIG. 13 is a schematic view for illustrating continuous sealing in a corner portion.
The upper left figure schematically shows the irradiated part near the corner, and the lower or right broken line diagram schematically shows the heat input near the corner. Further, the lower or right broken line diagram schematically shows the laser output switching (ON / OFF) timing. In this case, in the lower broken line diagram, the laser output is turned on (irradiated) when the line is on the upper side, and the laser output is turned off (stopped) when the line is on the lower side. Further, in the broken line diagram on the right side, the laser output is turned on (irradiated) when the line is on the left side, and the laser output is turned off (stopped) when the line is on the right side.

  As shown in FIG. 13, if the connection range P3 part is provided and the laser output switching (ON / OFF) timing on both sides of the corner part is continuously shifted, the heat input amount in the connection range P3 part is gently reduced. Since it can change so that it may connect, continuous sealing can be performed. Further, since the control is also performed only at the laser output switching (ON / OFF) timing, it can be easily performed even during high-speed scanning.

  In the example illustrated in FIG. 13, the laser output OFF (stop) timing is continuously shifted. In this case, if the number of positions where the laser output is turned off is increased, the amount of heat input can be changed substantially linearly. In addition, a laser beam can be spot-irradiated at the corner of the corner portion.

  As described with reference to FIG. 10C, the heat distribution in the corner portion tends to be non-uniform. Therefore, if the amount of heat input is reduced as it approaches the corner of the corner portion, the heat distribution can be made uniform, so that the occurrence of cracks and the like can be suppressed. In addition, precise scanning control and the like can be eliminated.

  FIG. 14 is a schematic diagram for illustrating the case where the frit F having a wide width is irradiated.

  When irradiating the wide frit F, the glass substrates G1 and G2 are moved by the XY table 112 so that the irradiation position meanders through the frit F while performing laser irradiation. it can. In this case, in consideration of the heat distribution in the corner portion, it is possible to irradiate the outside of the corner portion.

  In this way, even if the frit F has a wide width, the entire width of the frit F can be used for sealing. Further, if the outside of the corner portion is irradiated, the heat distribution can be made uniform, so that the occurrence of cracks and the like can be suppressed.

FIG. 15 is a schematic diagram for exemplifying irradiation to the frit F in which the positional deviation has occurred.
In the figure, the solid line represents the design position of the frit F, and the broken line represents the position of the frit F ′ that has been displaced.
As shown in FIG. 15, the frit formed by baking after being applied to the glass surface may cause a positional shift due to distortion.
In such a case, it is possible to measure the amount of misalignment in advance using an image processing technique and determine the irradiation position based on the data. It is also possible to perform irradiation while correcting the deviation while detecting the position of the frit with a sensor or the like.

Next, a method for manufacturing an electronic device according to an embodiment of the present invention will be described.
For convenience of explanation, the method for manufacturing an electronic device according to the embodiment of the present invention will be described by taking a method for manufacturing an organic EL display as an example.

  First, a TFT transistor, various electrode wirings, and the like are formed on the surface of the glass substrate G2, and an array substrate having a plurality of pixels is created. The formation of the TFT transistor, various electrode wirings, and the like can be performed using a known photolithography technique, and thus description thereof is omitted.

  Next, using a CVD (Chemical Vapor Deposition) method or the like, a transparent insulating film (for example, a silicon oxide film) is formed on the above-described pixel. Thereafter, a contact hole or the like penetrating to the drain region of the TFT transistor is appropriately provided in the insulating film by using a dry etching method or the like. In addition, about the technique used for CVD method, dry etching method, etc., since a known technique is applicable, the description is abbreviate | omitted.

  Next, an anode electrode is formed by disposing a transparent electrode member (for example, ITO (Indium Tin Oxide)) for each pixel. The anode electrode can be formed by using a photolithographic technique after ITO is formed on the entire surface of the glass substrate, or can be directly formed by using a mask sputtering method. In addition, about a thin film formation, a photolithographic technique, etc., since a known technique is applicable, the description is abbreviate | omitted.

Next, in order to prevent an electrical short circuit between the pixels, a grid-like partition is formed so as to surround each pixel. The partition walls can be formed, for example, by disposing an ultraviolet curable acrylic resin resist and baking at 220 ° C. for 30 minutes. In addition, about the formation of a partition by an ultraviolet curable acrylic resin resist, a baking process, etc., since a known technique is applicable, the description is abbreviate | omitted.
Next, an organic EL layer is formed on the anode electrode of each pixel.
In forming the organic EL layer, first, a hole transport layer is formed on the anode electrode. The hole transport layer can be formed, for example, by directly depositing a material such as an aromatic amine derivative or by applying and drying a solution dissolved in a solvent.
Next, a light emitting layer that emits each color of red, green, and blue is laminated on the hole transport layer. Lamination can be performed using, for example, a striped shadow mask. In this case, the light emitting layer can be formed by directly depositing a material, or can be formed by applying and drying an ink-like light emitting material by a spin coat method or an ink jet method.
In addition, since a known technique can be applied to vapor deposition, spin coating method / ink jet method, drying, etc., description thereof will be omitted.

  Next, a cathode electrode is formed on the organic EL layer, and a protective layer is formed on the cathode electrode. The cathode electrode can be formed, for example, by vapor deposition of barium alone in a reduced pressure environment. The protective layer can be formed, for example, by vapor-depositing aluminum alone or an alloy thereof in a reduced pressure environment. In addition, since a known technique can be applied to vapor deposition in a reduced pressure environment, the description thereof is omitted.

On the other hand, a frit is applied in a predetermined shape on the surface of the glass substrate G1, and this is baked to produce a sealing substrate.
The frit can be glass powder containing oxide powder or the like. Examples of the oxide powder include magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), lithium oxide (Li ₂ O), sodium oxide (Na ₂ O), and potassium oxide (K ₂ O). Can be illustrated. However, the present invention is not limited to this, and can be changed as appropriate.
The frit can be applied by a dispensing method or a screen printing method. The temperature for firing the frit can be, for example, about 300 ° C. to 700 ° C. In addition, about a dispensing method, a screen printing method, a baking method, etc., since a known technique is applicable, the description is abbreviate | omitted.

  Next, the array substrate on which the organic EL layer or the like is formed as described above and the sealing substrate on which the frit is formed are superposed in an inert gas atmosphere such as nitrogen gas or argon gas, and a laser is applied to the frit. Irradiate and seal. Thereby, the organic EL element comprised by an organic EL layer, a TFT transistor, an electrode, etc. is enclosed in the sealed space of inert gas atmosphere. As the laser, a semiconductor laser with a wavelength of 810 nm, an Nd-YAG laser with 1064 nm, or the like can be used.

Here, the sealing device 1 described above can be used for laser irradiation of the frit. Moreover, the sealing method illustrated with the effect | action of the sealing apparatus 1 can be used. Therefore, the description regarding sealing is abbreviate | omitted.
Moreover, since a known technique can be applied to the superposition of glass substrates in an inert gas atmosphere, the description thereof is omitted.

  When what is formed as described above is an aggregate of a plurality of organic EL display panels, it is divided into a single organic EL display panel by dividing. The division can be divided by, for example, dividing the aggregate of organic EL display panels along the planned cutting line L and performing break processing on the aggregate of the divided organic EL display panels. In addition, about a cleaving and a break process, since a known technique can be applied, the description is abbreviate | omitted.

Next, a mechanism member or the like is mounted on the organic EL display panel manufactured as described above.
Examples of the mechanism member include a driver IC and a drive circuit that generates a control signal input thereto. Also, a cover or the like can be provided as necessary. In addition, since a known technique can be applied to the mechanism member, the cover, etc., the description thereof is omitted. In addition, since a known technique can be applied to attachment of a mechanism member and attachment of a cover, the description thereof is omitted.
This completes the manufacture of the organic EL display.

For convenience of explanation, the manufacturing method of the electronic device according to the embodiment of the present invention has been described by taking the manufacturing method of the organic EL display as an example, but is not limited thereto. For example, in the manufacture of other electronic devices such as flat panel displays such as liquid crystal displays, plasma displays, surface conduction electron-emitting device displays (SEDs), semiconductor devices, discharge tubes, and cathode ray tubes, the sealing device and the sealing method described above are used. Can be applied.
In this case, since a known technique in each electronic device can be applied to devices other than the sealing device and the sealing method according to the above-described embodiment of the present invention, description of the manufacturing method of other electronic devices is omitted. To do.

The embodiment of the present invention has been illustrated above. However, the present invention is not limited to these descriptions.
As long as the features of the present invention are provided, those skilled in the art appropriately modified the design of the above-described embodiments are also included in the scope of the present invention.
For example, the shape, size, material, arrangement, and the like of each element included in the sealing device 1, the laser head 15, the laser head 15a, the organic EL display, and the like are not limited to those illustrated, and can be changed as appropriate. .
Moreover, each element with which each embodiment mentioned above is combined can be combined as much as possible, and what combined these is also included in the scope of the present invention as long as the characteristics of the present invention are included.

It is a model perspective view for illustrating the principal part of the sealing device concerning an embodiment of the invention. It is a model perspective view for illustrating the sealing device concerning a comparative example. It is a schematic cross section for illustrating the optical means with which a laser head is equipped. It is a schematic diagram for illustrating the influence by a temperature difference. It is a schematic diagram for illustrating the influence of residual stress. It is a schematic diagram for illustrating the optical means for condensing a laser beam linearly on a frit. It is a schematic diagram for illustrating the preheating of an irradiation surface. It is a model perspective view for illustrating the principal part of the sealing device concerning other embodiments of the present invention. It is a model perspective view for illustrating the form of irradiation. It is a schematic diagram for illustrating the form of the heat input control in an irradiation surface. It is a schematic diagram for illustrating temporary fixing. It is a schematic diagram for illustrating continuous sealing between irradiation parts. It is a mimetic diagram for illustrating continuous sealing in a corner part. It is a schematic diagram for illustrating the case where irradiation is performed to the frit F having a wide width dimension. It is a mimetic diagram for illustrating irradiation to a frit which caused position shift.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Encapsulation device, 2 Kaleidoscope, 3 Condensing lens, 4 Condensing lens, 5 Cylindrical lens, 6 Condensing lens, 7a Cylindrical lens, 7b Cylindrical lens, 8 Condensing lens, 10 Condensing lens, 11 Reflecting mirror, 12 Galvano mirror, 13 fθ lens, 15 laser head, 15a laser head, C crack, F frit, F ′ frit, F1 to F9 frit, G1 glass substrate, G2 glass substrate, P1 discontinuous part, P2 connection range, P3 connection range

Claims (11)

A laser light source;
Holding means for holding the workpiece;
An irradiating means that is provided facing the holding means and into which laser light from the laser light source is introduced;
Moving means for moving relative positions of the holding means and the irradiation means;
With
The sealing device according to claim 1, wherein the irradiation unit includes an optical unit that focuses linear laser light on a frit provided on the object to be processed. A laser light source;
Holding means for holding the workpiece;
An irradiating means that is provided facing the holding means and into which laser light from the laser light source is introduced;
Moving means for moving relative positions of the holding means and the irradiation means;
With
The back metal irradiating means includes a scanning means for irradiating a frit provided on the object to be processed with a linear laser beam.   A sealing method comprising: condensing a linear laser beam using an optical means on a frit provided between opposing members and melting the frit.   A sealing method comprising: irradiating a frit provided between opposing members with a linear laser beam using a scanning unit to melt the frit.   The sealing method according to claim 3 or 4, wherein an amount of heat input to the frit is controlled so that a heat distribution in the vicinity of the frit is within a predetermined range.   5. The sealing method according to claim 4, wherein after the scanning range of the scanning means is narrowed and the frit is locally melted, the scanning range is widened to melt the frit.   The connection range is provided between the irradiation ranges of the laser light irradiated to the frit from a plurality of irradiation means, and the timing of switching the laser output in the connection range is continuously shifted. The sealing method according to any one of 4 to 6.   The sealing method according to claim 7, wherein adjacent laser outputs are switched at a predetermined position in the connection range.   The sealing method according to claim 3, wherein preheating in the vicinity of the frit is performed before the frit is melted.   An electronic device comprising the frit sealed using the sealing device according to claim 1.   A method for manufacturing an electronic device, wherein the frit is sealed by the sealing method according to claim 3.