JP2009100168A - Transmission and reception module - Google Patents

Transmission and reception module Download PDF

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JP2009100168A
JP2009100168A JP2007268904A JP2007268904A JP2009100168A JP 2009100168 A JP2009100168 A JP 2009100168A JP 2007268904 A JP2007268904 A JP 2007268904A JP 2007268904 A JP2007268904 A JP 2007268904A JP 2009100168 A JP2009100168 A JP 2009100168A
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circuit
signal line
transmission
multilayer substrate
band
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JP4670853B2 (en
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Hiroyuki Nonomura
博之 野々村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a transmission and reception module which includes an RF circuit and a control circuit separated from each other, maintains RF circuit characteristics by preventing trouble caused by mixture of unwanted wave and wide area noise generated between the RF circuit and the control circuit and can also be made compact. <P>SOLUTION: The transmission and reception module includes: a high frequency transmission circuit which is fixed to a metal support base and includes a power amplification part; the control circuit which is separated from the high frequency transmission circuit and transmits a control signal for controlling power of a power amplification part; a multilayer substrate which has ground conductors on the front and rear surfaces and is provided with a band prevention circuit in which patterns are formed by open stub in signal lines installed in an inner layer; a pin electrode which is electrically connected to one end side of the signal lines of the multilayer substrate and fixed to the multilayer substrate; a first electric connection means for connecting one of the signal lines including the pin electrode to the high frequency transmission circuit; and a second electric connection means for connecting the other of the signal lines including the pin electrode to the control circuit. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

この発明は、フェーズドアレイアンテナの送受信部や送受信用レーダ装置などに用いられる送受信モジュールに関する。   The present invention relates to a transmission / reception module used for a transmission / reception unit of a phased array antenna, a transmission / reception radar device, or the like.

一般にレーダ装置などに用いられる送受信モジュールでは、RF(高周波)回路と制御回路との二つの回路部をパッケージなどにまとめて実装する場合には、RF回路と制御回路との相互を介してRF信号側に不要波が混入し、RF回路特性が不安定になるという問題がある。例えば、特開2006−14088号公報図3(特許文献1参照)には外部端子としての複数の導体パッド15が設けられ、制御信号は外部の制御基板から供給される。また、内部導体パッド10には、複数のグランドビア30aを形成することで不要波の進入を抑制する伝送線路基板及び半導体パッケージに関するものが開示されている。   In general, in a transmission / reception module used in a radar device or the like, when two circuit parts of an RF (high frequency) circuit and a control circuit are mounted together in a package or the like, an RF signal is passed through the RF circuit and the control circuit. There is a problem in that unnecessary waves are mixed on the side and RF circuit characteristics become unstable. For example, in FIG. 3 of Japanese Patent Laid-Open No. 2006-14088 (see Patent Document 1), a plurality of conductor pads 15 are provided as external terminals, and control signals are supplied from an external control board. In addition, the internal conductor pad 10 is related to a transmission line substrate and a semiconductor package that suppress the entry of unnecessary waves by forming a plurality of ground vias 30a.

実開平5−4592号公報図1(特許文献2参照)には、高周波数帯域用電子機器の内部回路に設けられた電波遮蔽用の金属シールド函内部における電波の反射現象を抑止することにより、回路破壊やノイズの発生を防止するため、発振回路や増幅回路の電波発生源を外被する樹脂絶縁層とこれを外装する電波遮蔽用の金属シールド函との間に、反射防止材としての電波吸収体を部分的にあるいは全体にわたって介在させた高周波数帯域用電子機器内部回路の反射防止構造に関するものが開示されている。   In FIG. 1 (see Patent Document 2) of Japanese Utility Model Laid-Open No. 5-4592, by suppressing the reflection phenomenon of the radio wave inside the radio wave shielding metal shield box provided in the internal circuit of the high frequency band electronic device, In order to prevent circuit destruction and noise generation, radio waves as an anti-reflective material are placed between the resin insulation layer that covers the radio wave generation source of the oscillation circuit and amplifier circuit and the metal shield box that shields the radio wave. An antireflection structure for an internal circuit of an electronic device for a high frequency band in which an absorber is interposed partially or entirely is disclosed.

特開2006−14088号公報(第3図)Japanese Patent Laying-Open No. 2006-14088 (FIG. 3)

実開平5−4592号公報(第1図)Japanese Utility Model Publication No. 5-4592 (Fig. 1)

しかし、特許文献1に記載のものは、RF回路と制御回路基板とが同一パッケージに収納されていないため、送受信モジュールとして使用する場合には、大型化するという課題があった。   However, since the RF circuit and the control circuit board described in Patent Document 1 are not housed in the same package, there has been a problem of increasing the size when used as a transmission / reception module.

また、特許文献2に記載のものは、電波吸収体を金属シールドや樹脂モールドの表面に比較的大きな表面積に亘り塗布又は貼り付けをする必要があるので不要波に対する抑制を安価に構成できないという問題のほかに特定の不要波に対する大幅な抑制は困難であるという課題があった。   Moreover, since the thing of patent document 2 needs to apply | coat or paste a radio wave absorber over the surface of a metal shield or a resin mold over a comparatively large surface area, the problem that suppression with respect to an unnecessary wave cannot be comprised cheaply. In addition to this, there is a problem that it is difficult to significantly suppress specific unwanted waves.

この発明は、RF回路と制御回路とを離間し、例えば層別配置した場合であっても、RF回路や制御回路で相互発生する不要波や、外部から層別配置されているRF回路と制御回路空間に対する不要波や広域ノイズの混入による不都合を防止することにより安定したRF回路特性を維持し、小型化も可能な送受信モジュールを提供することを目的とする。   In the present invention, even when the RF circuit and the control circuit are separated from each other, for example, in a layered arrangement, unnecessary waves generated mutually in the RF circuit and the control circuit, and the RF circuit arranged in a layer from the outside are controlled. An object of the present invention is to provide a transmission / reception module capable of maintaining stable RF circuit characteristics and miniaturization by preventing inconvenience due to mixing of unnecessary waves and wide-area noise into the circuit space.

請求項1に係る送受信モジュールは、金属支持台に固定され、電力増幅部を含む高周波伝送回路と、この高周波伝送回路に離間して前記電力増幅部の電力を制御する制御信号を送出する制御回路と、表裏面に地導体を有し、内層に設置した信号線にオープンスタブでパターン形成した帯域阻止回路を設けた多層基板と、この多層基板の前記信号線の一端側と電気接続すると共に前記多層基板に固定したピン電極と、このピン電極を含む前記信号線の一方を前記高周波伝送回路に接続する第1電気接続手段と、前記ピン電極を含む前記信号線の他方を前記制御回路に接続する第2電気接続手段とを備え、前記信号線を通過する所望帯域周波数以外の不要波周波数を前記帯域阻止回路で阻止するものである。   A transmission / reception module according to claim 1 is fixed to a metal support, and includes a high-frequency transmission circuit including a power amplification unit, and a control circuit for sending a control signal for controlling the power of the power amplification unit apart from the high-frequency transmission circuit And a multilayer substrate having a ground conductor on the front and back surfaces and provided with a band rejection circuit patterned with an open stub on the signal line installed on the inner layer, and electrically connected to one end side of the signal line of the multilayer substrate and A pin electrode fixed to a multilayer substrate, a first electrical connection means for connecting one of the signal lines including the pin electrode to the high-frequency transmission circuit, and a second end of the signal line including the pin electrode connected to the control circuit And a second electric connecting means for blocking unnecessary wave frequencies other than a desired band frequency passing through the signal line by the band blocking circuit.

請求項2に係る送受信モジュールは、前記帯域阻止回路のオープンスタブ形成面周囲は、前記多層基板の表裏面と共通接続された地導体パターンで形成されている請求項1に記載のものである。   The transmission / reception module according to claim 2 is the one according to claim 1, wherein the periphery of the open stub forming surface of the band rejection circuit is formed by a ground conductor pattern commonly connected to the front and back surfaces of the multilayer substrate.

請求項3に係る送受信モジュールは、金属支持台に固定され、電力増幅部を含む高周波伝送回路と、この高周波伝送回路に離間して前記電力増幅部の電力を制御する制御信号を送出する制御回路と、表裏面に地導体を有し、表面側の地導体に隣接した第1内層に設置した第1信号線にオープンスタブでパターン形成した第1帯域阻止回路を設け、前記第1内層の反対面に隣接した第2内層を地導体とし、この第2内層に隣接し、反対面を裏面側の地導体と隣接した第3内層に設置した第2信号線に前記第1帯域阻止回路のオープンスタブ長とは異なる第2帯域阻止回路を設けた多層基板と、この多層基板の前記第1信号線と前記第2信号線とを共通接続する前記多層基板のスルーホール部と、共通接続された前記第1信号線と前記第2信号線の一端側と電気接続すると共に前記多層基板に固定したピン電極と、このピン電極を含む前記第1信号線及び前記第2信号線の一方を前記高周波伝送回路に接続する第1電気接続手段と、前記ピン電極を含む前記第1信号線及び前記第2信号線の他方を前記制御回路に接続する第2電気接続手段とを備え、前記第1信号線及び前記第2信号線を通過する所望帯域周波数以外の不要波周波数を前記第1帯域阻止回路及び前記第2帯域阻止回路で帯域阻止するものである。   A transmission / reception module according to claim 3 is fixed to a metal support, and includes a high-frequency transmission circuit including a power amplification unit, and a control circuit that sends a control signal that controls the power of the power amplification unit apart from the high-frequency transmission circuit And a first band stop circuit having a ground conductor on the front and back surfaces and patterned with an open stub on the first signal line installed in the first inner layer adjacent to the ground conductor on the front side, opposite to the first inner layer The second inner layer adjacent to the surface is used as a ground conductor, and the first band stop circuit is opened to a second signal line installed on the third inner layer adjacent to the second inner layer and adjacent to the ground conductor on the back side. A multi-layer board provided with a second band rejection circuit different from the stub length, and a through-hole portion of the multi-layer board commonly connecting the first signal line and the second signal line of the multi-layer board are connected in common. The first signal line and the second signal line A pin electrode electrically connected to one end side and fixed to the multilayer substrate; a first electric connecting means for connecting one of the first signal line and the second signal line including the pin electrode to the high-frequency transmission circuit; A desired band passing through the first signal line and the second signal line, comprising: a second electrical connection means for connecting the other of the first signal line and the second signal line including the pin electrode to the control circuit; The unnecessary wave frequency other than the frequency is band-stopped by the first band-stop circuit and the second band-stop circuit.

請求項4に係る送受信モジュールは、前記第1帯域阻止回路及び前記第2帯域阻止回路のオープンスタブ形成面周囲は、前記多層基板の表裏面と共通接続された地導体パターンで形成されている請求項3に記載のものである。   In the transmission / reception module according to claim 4, the periphery of the open stub formation surface of the first band rejection circuit and the second band rejection circuit is formed by a ground conductor pattern commonly connected to the front and back surfaces of the multilayer substrate. Item 3. Item 3.

請求項5に係る送受信モジュールは、前記ピン電極は、外周が電波吸収材で覆われている請求項1乃至4に記載のものである。   The transmission / reception module according to a fifth aspect is the transmission / reception module according to the first to fourth aspects, wherein an outer periphery of the pin electrode is covered with a radio wave absorber.

請求項1に係る送受信モジュールによれば、高周波伝送回路と制御回路との間に、内層をオープンスタブとした帯域阻止機能を有する多層基板を設置したので、高周波伝送回路、特に電力増幅部などで発生する歪による不要波や、制御回路から高周波伝送回路に混入する不要波を軽減することが可能となるので良好な高周波特性を維持できる。 According to the transmission / reception module according to claim 1, since the multilayer substrate having the band blocking function with the inner layer being an open stub is installed between the high-frequency transmission circuit and the control circuit, the high-frequency transmission circuit, particularly the power amplification unit, etc. Since it is possible to reduce unnecessary waves due to the generated distortion and unnecessary waves mixed in the high-frequency transmission circuit from the control circuit, good high-frequency characteristics can be maintained.

請求項2に係る送受信モジュールによれば、帯域阻止回路のオープンスタブ周辺が地導体で覆われるので不要な分布定数回路の発生が無くなると共に多層基板の積層領域を介して放射・混入する不要波を除去でき、結果、不要な干渉波の抑制が確保できる。   According to the transmission / reception module according to claim 2, since the periphery of the open stub of the band rejection circuit is covered with the ground conductor, generation of an unnecessary distributed constant circuit is eliminated, and unnecessary waves radiated and mixed through the laminated region of the multilayer substrate are eliminated. As a result, unnecessary interference waves can be suppressed.

請求項3に係る送受信モジュールによれば、高周波伝送回路と制御回路との間に、内層をオープンスタブとした周波数の異なる帯域阻止機能を有する多層基板を設置したので、高周波伝送回路、特に電力増幅部などで発生する歪による比較的帯域幅の広い不要波、制御回路から高周波伝送回路に混入する帯域幅の広い不要波を軽減することが可能となる。   According to the transmission / reception module according to claim 3, since the multilayer substrate having the band blocking function of different frequencies with the inner layer being an open stub is installed between the high frequency transmission circuit and the control circuit, the high frequency transmission circuit, particularly the power amplification It is possible to reduce unnecessary waves having a relatively wide bandwidth due to distortion generated in a part and the like, and unnecessary waves having a wide bandwidth mixed from the control circuit to the high-frequency transmission circuit.

請求項4に係る送受信モジュールによれば、第1及び第2帯域阻止回路のオープンスタブ周辺が地導体で覆われるので不要な分布定数回路の発生が無くなると共に多層基板の積層領域を介して放射・混入する比較的帯域幅の広い不要波を除去でき、結果、不要な干渉波の抑制が確保できる。   According to the transmission / reception module according to claim 4, since the periphery of the open stub of the first and second band rejection circuits is covered with the ground conductor, generation of unnecessary distributed constant circuits is eliminated, and radiation / radiation is performed through the laminated region of the multilayer substrate. Unnecessary waves with a relatively wide bandwidth can be removed, and as a result, suppression of unnecessary interference waves can be ensured.

請求項5に係る送受信モジュールによれば、ピン電極は、外周が電波吸収材で覆われているのでピン電極の表面もしくは外被を介して放射・混入するマイクロ波周波数帯域のノイズを除去できる。   According to the transmission / reception module according to the fifth aspect, since the outer periphery of the pin electrode is covered with the radio wave absorber, noise in the microwave frequency band radiated and mixed through the surface of the pin electrode or the outer jacket can be removed.

実施の形態1.
以下、この発明の実施の形態1に係る送受信モジュールについて説明する。図1は、実施の形態1に係る送受信モジュールの断面構成図である。図1において、1は電力増幅部や送受信切換回路などを搭載した高周波回路(高周波伝送回路)であり、1aは第1系統の送受信系RF回路、1bは第2系統の送受信系RF回路である。2は高周波回路1の電力増幅部などから放散される熱の放熱を兼ね、高周波回路1a、1bなどを支持する金属支持台、3は高周波回路1に送受信電力や送受信切換信号などのパルス制御信号や電源を供給する制御回路であり、3aは制御回路3を構成するプリント配線板やセラミック基板などで構成された基板である。4は制御回路3から送出される制御信号を通過させると共に不要波を除去するフィルタを装備した3層の多層基板、5は多層基板4の信号線から延在するピン電極、6は多層基板4の表面に露出した信号線と高周波回路1とを接続する金リボン又は金ワイヤで構成した第1電気接続手段である。7はピン電極5と制御回路3とを接続するフォーミング線又は金ワイヤもしくはニッケル(Ni)リボンなどで構成した第2電気接続手段である。
Embodiment 1 FIG.
Hereinafter, the transceiver module according to Embodiment 1 of the present invention will be described. FIG. 1 is a cross-sectional configuration diagram of a transmission / reception module according to the first embodiment. In FIG. 1, reference numeral 1 denotes a high-frequency circuit (high-frequency transmission circuit) on which a power amplification unit, a transmission / reception switching circuit, and the like are mounted. . 2 is a metal support for supporting the high-frequency circuits 1a, 1b and the like, and 3 is a pulse control signal such as transmission / reception power and a transmission / reception switching signal. And a control circuit 3a for supplying power, and reference numeral 3a denotes a printed circuit board, a ceramic substrate, or the like constituting the control circuit 3. Reference numeral 4 denotes a three-layered multilayer board equipped with a filter for passing a control signal transmitted from the control circuit 3 and removes unnecessary waves, 5 a pin electrode extending from a signal line of the multilayer board 4, and 6 a multilayer board 4 1 is a first electrical connection means composed of a gold ribbon or a gold wire for connecting the signal line exposed on the surface of the metal and the high-frequency circuit 1. Reference numeral 7 denotes a second electrical connecting means constituted by a forming wire, a gold wire, a nickel (Ni) ribbon or the like for connecting the pin electrode 5 and the control circuit 3.

8は高周波回路1や制御回路3を収納又は保持する筐体、8aは高周波回路1と制御回路3とを層別構成区分する筐体8と一体化された中板、8bは中板8aに設けられたピン電極5を貫通させる貫通穴、8cはピン電極5を通過させる基板3aに設けられた貫通穴、9は制御回路3に搭載した制御用ASICや電源回路などの電子部品、10は筐体8に部材を固定するネジである。   8 is a housing for housing or holding the high-frequency circuit 1 or the control circuit 3, 8a is a middle plate integrated with the housing 8 that divides the high-frequency circuit 1 and the control circuit 3 into layers, and 8b is a middle plate 8a. A through-hole through which the pin electrode 5 is provided, 8c is a through-hole provided in the substrate 3a through which the pin electrode 5 passes, 9 is an electronic component such as a control ASIC or power supply circuit mounted on the control circuit 3, and 10 is A screw for fixing a member to the housing 8.

図2は、実施の形態1に係る送受信モジュールの機能ブロック図である。図2において、11はRF信号の移相制御を行う移相器、12は送受信の信号経路の切換を行う送受信切換回路、13は送信信号の電力を増幅する送信電力増幅部、14は受信信号の電力を増幅する受信電力増幅部、15はサーキュレータや方向性結合器などの受動回路で構成した送受信切換部、16は多層基板4の信号線に接続され、ピン電極5をはんだ材などで多層基板4に固定し、離間して設置された高周波回路1と制御回路3との筐体8内の立体空間を接続するものでフィルタ装荷接続ピンと呼称する。17は送受信モジュールの外側に設けられた送受信アンテナであり、通常、多数のフェーズドアレイアンテナなどが送受信系RF回路毎に併設される。図1及び図2中、同一符号は同一又は相当部分を示す。   FIG. 2 is a functional block diagram of the transmission / reception module according to the first embodiment. In FIG. 2, 11 is a phase shifter that performs phase shift control of an RF signal, 12 is a transmission / reception switching circuit that switches a signal path of transmission / reception, 13 is a transmission power amplification unit that amplifies the power of the transmission signal, and 14 is a reception signal. Received power amplifying unit for amplifying the power of the signal, 15 is a transmission / reception switching unit configured by a passive circuit such as a circulator or a directional coupler, 16 is connected to the signal line of the multilayer substrate 4, and the pin electrode 5 is multilayered with a solder material or the like This is connected to the three-dimensional space in the housing 8 of the high-frequency circuit 1 and the control circuit 3 that are fixed to the substrate 4 and spaced apart from each other, and is called a filter loading connection pin. Reference numeral 17 denotes a transmission / reception antenna provided outside the transmission / reception module. Usually, a large number of phased array antennas and the like are provided for each transmission / reception system RF circuit. 1 and 2, the same reference numerals indicate the same or corresponding parts.

次に機能について説明する。図1において、筐体8は、高周波回路1と制御回路3とを層別構造で収納するので、上層と下層を中板8aで仕切った構造となっている。すなわち、上層は高周波回路1を収納し、下層は制御回路3を収納する。高周波回路1は発熱部があるので放熱効果を高めるために筐体8にネジ止めされた金属支持台2に導電材で接着され、筐体8の中板8a位置に固定される。また、基板3aに搭載された制御回路3も筐体8の中板8a位置に基板3aの端部に取り付け穴を設けてネジ10で固定される。   Next, functions will be described. In FIG. 1, the housing 8 houses the high-frequency circuit 1 and the control circuit 3 in a layered structure, so that the upper layer and the lower layer are partitioned by an intermediate plate 8a. That is, the upper layer houses the high-frequency circuit 1 and the lower layer houses the control circuit 3. Since the high-frequency circuit 1 has a heat generating portion, the high-frequency circuit 1 is bonded to the metal support 2 screwed to the housing 8 with a conductive material in order to enhance the heat dissipation effect, and is fixed to the middle plate 8a position of the housing 8. Further, the control circuit 3 mounted on the board 3 a is also fixed with screws 10 by providing attachment holes at the end of the board 3 a at the position of the middle plate 8 a of the housing 8.

また、多層基板4から延在するピン電極5は、筐体8の中板8aに貫通穴8bを設け、制御回路3側の基板3aにも対応する貫通穴8cを設けることで高周波回路1と制御回路3との接続を行う。   In addition, the pin electrode 5 extending from the multilayer substrate 4 is provided with a through hole 8b in the middle plate 8a of the housing 8 and a corresponding through hole 8c in the substrate 3a on the control circuit 3 side. Connection to the control circuit 3 is performed.

このようにして高周波回路1と制御回路3とは空間的に離間して配置されていてもピン電極5を介して接続される。本実施の形態1では、フィルタ装荷接続ピン16の接続向きは、多層基板4の一方の面にピン電極5が固定された側が制御回路3の接続先になり、多層基板4の他方の表面から高周波回路1と接続するようにしている。金属支持台2と多層基板4とは接着材やろう付けなどにより固定する。最終的に高周波回路1の複数の接続用パッドはフィルタ装荷接続ピン16の信号線と第1電気接続手段6で接続され、制御回路3の複数の制御端子は先端だけ露出されたピン電極5の信号線と第2電気接続手段7で接続される。   In this way, the high-frequency circuit 1 and the control circuit 3 are connected via the pin electrode 5 even if they are spaced apart from each other. In the first embodiment, the connection direction of the filter loading connection pins 16 is such that the side on which the pin electrode 5 is fixed to one surface of the multilayer substrate 4 is a connection destination of the control circuit 3, and the other surface of the multilayer substrate 4 is connected. The high frequency circuit 1 is connected. The metal support 2 and the multilayer substrate 4 are fixed by an adhesive or brazing. Finally, the plurality of connection pads of the high-frequency circuit 1 are connected to the signal lines of the filter loading connection pins 16 by the first electrical connection means 6, and the plurality of control terminals of the control circuit 3 are the pin electrodes 5 exposed only at the tips. The signal line is connected to the second electrical connection means 7.

図3は、フィルタ装荷接続ピン16の内部構成を説明する図であり、18は多層基板4の内層に設置され、マイクロストリップ線路で構成したオープンスタブである。オープンスタブ18は信号線近傍に設置され、その線路長は不要波周波数の1/4λg実効長に設定され、図4に示すようにマイクロ波帯域における帯域阻止フィルタ(BRF)の役目を果たし、パターン形成されたオープンスタブ18の周囲は地導体パターンとなっている。   FIG. 3 is a diagram for explaining the internal configuration of the filter loading connection pin 16, and 18 is an open stub that is installed in the inner layer of the multilayer substrate 4 and configured by a microstrip line. The open stub 18 is installed in the vicinity of the signal line, and its line length is set to an effective length of 1 / 4λg of the unwanted wave frequency. As shown in FIG. 4, the open stub 18 serves as a band rejection filter (BRF) in the microwave band. The periphery of the formed open stub 18 is a ground conductor pattern.

図5は、フィルタ装荷接続ピン16の外観図であり、19は多層基板4の表面に露出した信号パターンであり、オープンスタブ18を介してピン電極5と電気接続される。   FIG. 5 is an external view of the filter loading connection pin 16, and 19 is a signal pattern exposed on the surface of the multilayer substrate 4, and is electrically connected to the pin electrode 5 through the open stub 18.

図6は、多層基板4のパターンを層別に説明する図であり、図6(a)は、一方の表層パターン、図6(b)は内層パターン、図6(c)は他方の表層パターンである。図6において、20は表層と内層の信号線を共通接続するスルーホール部、21はピン電極5を多層基板4に電気接続するピン接続部であり、ピン電極5の固定部分でもある。22は表層の信号パターン及びピン接続部21を除き全面を地導体とし、内層の地導体と共通接続するグランドビアであり、多層基板4の端部周囲にオープンスタブ18に沿って設置されている。   6A and 6B are diagrams for explaining the pattern of the multilayer substrate 4 by layer. FIG. 6A shows one surface layer pattern, FIG. 6B shows an inner layer pattern, and FIG. 6C shows the other surface layer pattern. is there. In FIG. 6, reference numeral 20 denotes a through-hole portion that commonly connects the surface layer and inner layer signal lines, and reference numeral 21 denotes a pin connection portion that electrically connects the pin electrode 5 to the multilayer substrate 4, and is also a fixed portion of the pin electrode 5. Reference numeral 22 denotes a ground via that has a ground conductor on the entire surface except for the signal pattern on the surface layer and the pin connection portion 21 and is connected in common with the ground conductor on the inner layer, and is installed along the open stub 18 around the end portion of the multilayer substrate 4. .

図7は、フィルタ装荷接続ピンの図6に示すA−A部の部分断面図であり、ピン電極5は表層パターンランドにはんだ付け又はろう付けにより接続される。   FIG. 7 is a partial cross-sectional view taken along line AA of FIG. 6 of the filter loading connection pin, and the pin electrode 5 is connected to the surface layer pattern land by soldering or brazing.

次に多層基板4の内層に設置したオープンスタブ18について説明する。多層基板4は3層構造であり、材質はBTレジン又はフッ素樹脂を用いた誘電損失の少ないものを用いる。BTレジンの実効誘電率(εr)は4.2、フッ素樹脂のεrは2.6であり、それらの基材を使用する場合には、それぞれの基板厚、ストリップライン幅(W)などを考慮して、トリプレート線路を形成するオープンスタブ長を決める。また、内層パターン面に対してストリップ線路を形成するオープンスタブ18と遮蔽形成した地導体との隔離距離はオープンスタブ18のライン幅(W)よりも大きくすることが好ましい。また、上記に限らずセラミック基板のようなεrが9.0程度の高誘電率のものであれば、さらにマイクロ波周波数の高い領域であってもコンパクトな構造で帯域阻止回路をセラミック多層基板に収納できる。   Next, the open stub 18 installed in the inner layer of the multilayer substrate 4 will be described. The multilayer substrate 4 has a three-layer structure and is made of a material having a small dielectric loss using BT resin or fluororesin. The effective dielectric constant (εr) of BT resin is 4.2, and the εr of fluororesin is 2.6. When these base materials are used, the thickness of each substrate, strip line width (W), etc. are taken into consideration. The open stub length for forming the triplate line is determined. In addition, it is preferable that the separation distance between the open stub 18 that forms the strip line and the shielded ground conductor with respect to the inner layer pattern surface is larger than the line width (W) of the open stub 18. In addition to the above, if the εr has a high dielectric constant of about 9.0, such as a ceramic substrate, the bandstop circuit can be formed on a ceramic multilayer substrate with a compact structure even in a high microwave frequency region. Can be stored.

以上からフィルタ装荷接続ピン16を用いることによって、高周波回路1と制御回路3との間の空間のアイソレーションを確保するフィルタ(チョーク)回路として働き、筐体8内での正帰還による発振を抑えることができる。また、送受信系が同一筐体内に2つ以上ある場合に系間の混信などが抑制されるので系間のアイソレーションを高める効果もある。   From the above, by using the filter loading connection pin 16, it functions as a filter (choke) circuit that ensures the isolation of the space between the high-frequency circuit 1 and the control circuit 3, and suppresses oscillation due to positive feedback in the housing 8. be able to. In addition, when there are two or more transmission / reception systems in the same housing, interference between systems is suppressed, so that there is an effect of increasing isolation between systems.

また、オープンスタブ18を多層基板4の内層に設置することで、オープンスタブ18を高周波回路1から独立させることになるので高周波回路1の構造に関わらず、オープンスタブ18を地導体パターンにより遮へいする構造とすることが容易である。 Further, since the open stub 18 is installed in the inner layer of the multilayer substrate 4, the open stub 18 is made independent from the high-frequency circuit 1, so that the open stub 18 is shielded by the ground conductor pattern regardless of the structure of the high-frequency circuit 1. It is easy to make a structure.

従って、電磁シールド効果が高められるため、オープンスタブ18から空間への信号の放射も防ぐことができる。これにより、比較的放射が起こりやすいピン電極5のような細長の立体的接続構造であっても、送受信モジュールの高周波特性を安定化させる利点もある。   Accordingly, since the electromagnetic shielding effect is enhanced, signal emission from the open stub 18 to the space can be prevented. Thereby, even if it is an elongate three-dimensional connection structure like the pin electrode 5 which is easy to generate | occur | produce radiation, there also exists an advantage which stabilizes the high frequency characteristic of a transmission / reception module.

また、ピン電極5に示すような構造によればその前後の接続段に対しては、通常、集中定数によるフィルタが用いられるが、このピン電極5と分布定数によるオープンスタブ18を内装した多層基板4を組合わせた構造においては、集中定数回路を必要とすることなくフィルタ特性を得ることができる効果がある。   Further, according to the structure shown in the pin electrode 5, a filter with a lumped constant is usually used for the connection stages before and after the multi-layer substrate with the pin electrode 5 and an open stub 18 with a distributed constant. In the structure in which 4 is combined, there is an effect that a filter characteristic can be obtained without requiring a lumped constant circuit.

さらに、3次元的配置の実装方法により、回路実装を空間的に行えるため、モジュールの小型化・実装の高密度化が行える。   Further, since the circuit mounting can be performed spatially by the mounting method of the three-dimensional arrangement, the module can be downsized and the mounting density can be increased.

実施の形態2.
以下、この発明の実施の形態2に係る送受信モジュールについて説明する。図8は、実施の形態2におけるフィルタ装荷接続ピンの外観図であり、40は5層構造の多層基板である。
Embodiment 2. FIG.
Hereinafter, a transceiver module according to Embodiment 2 of the present invention will be described. FIG. 8 is an external view of the filter loading connection pin in the second embodiment, and 40 is a multi-layer substrate having a five-layer structure.

図9は、多層基板40のパターンを層別に説明する図であり、図9(a)は、一方の表層パターン、図9(b)は一方の表層に隣接する内層パターン、図9(c)は内層地導体パターン、図9(d)は内層地導体パターンに隣接する内層パターン、図9(e)は他方の表層パターンをそれぞれ示す。図9において、180は第1オープンスタブ、181は第2オープンスタブであり、表層パターンと内層地導体パターンとはスルーホール部20や一部の信号線19やピン接続部21を除き全面地導体となっており、それぞれの地導体は実施の形態1同様にグランドビア22で電気接続される。なお、図6と同一符号は同一又は相当部分を示す。   9 is a diagram for explaining the pattern of the multilayer substrate 40 by layer. FIG. 9A shows one surface layer pattern, FIG. 9B shows an inner layer pattern adjacent to one surface layer, and FIG. Is an inner layer ground conductor pattern, FIG. 9D is an inner layer pattern adjacent to the inner layer ground conductor pattern, and FIG. 9E is the other surface layer pattern. In FIG. 9, 180 is a first open stub, 181 is a second open stub, and the surface layer pattern and the inner layer ground conductor pattern are ground conductors except for the through-hole portion 20, some signal lines 19, and pin connection portions 21. Each ground conductor is electrically connected by the ground via 22 as in the first embodiment. 6 denote the same or corresponding parts.

次に層構成について詳述する。ピン電極5を固定する一方の表面側の地導体に隣接した第1内層に設置した第1信号線にオープンスタブパターン181を形成した第1帯域阻止回路を設け、第1内層の反対面に隣接した第2内層を地導体とし、第2内層に隣接し、反対面を裏面側地導体とした第3内層に設置した第2信号線に第1帯域阻止回路のオープンスタブ181のスタブ長とは異なるオープンスタブ180を形成し、第2帯域阻止回路を設けた多層基板40とする。   Next, the layer structure will be described in detail. A first band rejection circuit in which an open stub pattern 181 is formed on the first signal line installed in the first inner layer adjacent to the ground conductor on one surface side to which the pin electrode 5 is fixed is provided and adjacent to the opposite surface of the first inner layer What is the stub length of the open stub 181 of the first band rejection circuit on the second signal line installed in the third inner layer, the second inner layer being the ground conductor, adjacent to the second inner layer, and the opposite surface being the back side ground conductor? Different open stubs 180 are formed, and the multilayer substrate 40 is provided with the second band rejection circuit.

また、多層基板40の第1信号線と第2信号線とは共通接続するスルーホール部20で電気接続される。さらに、共通接続された第1信号線と第2信号線の一端は多層基板40のピン接続部21で固定されるピン電極5と電気接続する。   Further, the first signal line and the second signal line of the multilayer substrate 40 are electrically connected by the through-hole portion 20 that is commonly connected. Further, one end of the commonly connected first signal line and second signal line is electrically connected to the pin electrode 5 fixed by the pin connection part 21 of the multilayer substrate 40.

図10は、フィルタ装荷接続ピンの図9に示すB−B部の部分断面図であり、ピン電極5は表層パターンランドにはんだ付け又はろう付けにより接続される。   FIG. 10 is a partial cross-sectional view of the filter loading connection pin taken along line BB shown in FIG. 9, and the pin electrode 5 is connected to the surface layer pattern land by soldering or brazing.

次に多層基板40の内層に設置したオープンスタブ180、181について説明する。多層基板40は5層構造であり、第1内層に設置したオープンスタブ181のスタブ長はL2とし、不要波周波数の設計値をf1とする。また、第3内層に設置したオープンスタブ180のスタブ長はL1とし、不要波周波数の設計値をf2とする。すなわち第1内層のスタブ長を第3内層のスタブ長より長くすることにより、不要波周波数帯域の阻止帯域が広くなる。   Next, the open stubs 180 and 181 installed in the inner layer of the multilayer substrate 40 will be described. The multilayer substrate 40 has a five-layer structure. The stub length of the open stub 181 installed in the first inner layer is L2, and the design value of the unnecessary wave frequency is f1. Further, the stub length of the open stub 180 installed in the third inner layer is L1, and the design value of the unnecessary wave frequency is f2. That is, by making the stub length of the first inner layer longer than the stub length of the third inner layer, the stop band of the unnecessary wave frequency band is widened.

図11はマイクロ波周波数帯域にオープンスタブ180、181を用いて、送受信モジュールの伝送損失を説明する図であり、15dB以上の伝送損失を有する帯域阻止フィルタ(BRF)を形成していることが解かる。   FIG. 11 is a diagram for explaining the transmission loss of the transmission / reception module using the open stubs 180 and 181 in the microwave frequency band, and it is understood that a band rejection filter (BRF) having a transmission loss of 15 dB or more is formed. Karu.

本実施の形態2では、帯域阻止周波数f1、f2を接近させたが、幅広いマイクロ波周波数帯域においては独立した帯域阻止領域を設けても良く、5層の多層基板40でなくとも実施の形態1同様に3層の多層基板構造とし、図12に示すように内層に相互に不要波周波数の異なるオープンスタブを設置し、それぞれのオープンスタブ周辺を遮蔽する地導体パターンをグランドビア22を用いて表面地導体と接続しても帯域阻止回路としての機能を有し相応の効果を奏する。   In the second embodiment, the band stop frequencies f1 and f2 are made close to each other. However, an independent band stop region may be provided in a wide microwave frequency band, and the first embodiment is not required even if the multi-layer substrate 40 is not used. Similarly, as shown in FIG. 12, an open stub having mutually different unwanted wave frequencies is installed on the inner layer as shown in FIG. 12, and a ground conductor pattern that shields the periphery of each open stub is formed using the ground via 22. Even if it is connected to the ground conductor, it has a function as a band rejection circuit and has a corresponding effect.

以上から高周波伝送回路と制御回路との間に、内層をオープンスタブとした周波数の異なる帯域阻止機能を有する多層基板を設置したので、高周波伝送回路で発生する電力増幅部などで発生する歪による比較的帯域幅の広い不要波や、制御回路から高周波伝送回路に混入する比較的帯域幅の広い不要波を軽減することが可能となる。   From the above, a multilayer substrate with a band rejection function with different frequencies with an inner layer as an open stub was installed between the high-frequency transmission circuit and the control circuit. It is possible to reduce unnecessary waves having a wide bandwidth and unnecessary waves having a relatively wide bandwidth mixed in the high-frequency transmission circuit from the control circuit.

実施の形態3.
以下、この発明の実施の形態3に係る送受信モジュールについて説明する。図13は、実施の形態3におけるフィルタ装荷接続ピンの外観図であり、200は実施の形態1で説明した3層構造の多層基板4のピン電極5の周囲に設置した電波吸収材である。図13において、電波吸収材200はピン電極5の先端を除く周囲にディップ塗布もしくはシートを巻き付けることにより、不要なノイズを除去することが可能である。なお、電波吸収材200は、粒径10μm以下に粉砕加工したカーボン材や金属粉をエチルセルローズなどの合成樹脂バインダと混合後、ローラで分散させたものをペースト状もしくは乾燥させてシート状にしたものを使用する。
Embodiment 3 FIG.
Hereinafter, a transceiver module according to Embodiment 3 of the present invention will be described. FIG. 13 is an external view of the filter loading connection pin according to the third embodiment, and reference numeral 200 denotes a radio wave absorber disposed around the pin electrode 5 of the multilayer substrate 4 having the three-layer structure described in the first embodiment. In FIG. 13, the radio wave absorber 200 can remove unnecessary noise by dip coating or winding a sheet around the periphery of the pin electrode 5 except the tip. In addition, the radio wave absorber 200 was made into a sheet form by mixing a carbon material or metal powder pulverized to a particle size of 10 μm or less with a synthetic resin binder such as ethyl cellulose and then dispersing it with a roller into a paste or drying. Use things.

本実施の形態3では、実施の形態1及び2同様に細長のピン電極5を使用するのでピン電極5に混入する不要なノイズを電波吸収材で熱に変換することでピン電極5からの電磁放射を防止する。特に高周波特性が不安定な状態が観測された後でも電波吸収材200をピン電極5に付加することで対処可能であり、特定の不要波周波数以外の単発ノイズ周波数に対して効果を奏する。同様に図14は、実施の形態2で説明した多層基板40を用いた場合であり、いずれもノイズに関して同様の効果を奏する。   In the third embodiment, since the elongated pin electrode 5 is used as in the first and second embodiments, unnecessary noise mixed in the pin electrode 5 is converted into heat by the radio wave absorber, so that electromagnetic waves from the pin electrode 5 are converted. Prevent radiation. In particular, even after a state in which the high frequency characteristics are unstable is observed, it can be dealt with by adding the radio wave absorber 200 to the pin electrode 5, which is effective against a single noise frequency other than a specific unnecessary wave frequency. Similarly, FIG. 14 shows a case where the multilayer substrate 40 described in the second embodiment is used, and all have the same effect regarding noise.

なお、実施の形態1〜3では、2系統の送受信RF回路について説明した。通常、アクティブフェーズドアレイアンテナ装置では、多数の系統の送受信RF回路を用いるが、これに限らず1系統の高周波回路とするような一般の高周波モジュールとしての使用も可能である。   In the first to third embodiments, two transmission / reception RF circuits have been described. Normally, an active phased array antenna apparatus uses a large number of transmission / reception RF circuits, but is not limited to this, and can be used as a general high-frequency module such as a single high-frequency circuit.

また、実施の形態1〜3では、送受信モジュールについて説明したが、送信又は受信のみの機能を適用する場合には、電力増幅部以外の送受信切換回路12や送受信切換部15は不要である。   In the first to third embodiments, the transmission / reception module has been described. However, when the function of only transmission or reception is applied, the transmission / reception switching circuit 12 and the transmission / reception switching unit 15 other than the power amplification unit are not necessary.

また、多層基板4、40に固定した細長のピン電極5は、細長の金属ブロックであれば良く、また、燐青銅材などを使用してその弾性機能を利用することにより多層基板4、40のピン接続部21に挿入することで電気接続及びピン電極5を固定する。この場合にははんだ付けや、ろう付け工程は不要である。   Further, the elongated pin electrode 5 fixed to the multilayer substrates 4 and 40 may be an elongated metal block, and the elastic function of the multilayer substrates 4 and 40 is obtained by using a phosphor bronze material or the like. The electrical connection and the pin electrode 5 are fixed by being inserted into the pin connection portion 21. In this case, soldering and brazing processes are unnecessary.

この発明の実施の形態1に係る送受信モジュールの断面構成図である。It is a section lineblock diagram of a transceiver module concerning Embodiment 1 of this invention. この発明の実施の形態1に係る送受信モジュールの機能ブロック図である。It is a functional block diagram of the transmission / reception module which concerns on Embodiment 1 of this invention. この発明の実施の形態1に係る送受信モジュールのフィルタ装荷接続ピンの内部構成を説明する図である。It is a figure explaining the internal structure of the filter loading connection pin of the transmission / reception module which concerns on Embodiment 1 of this invention. この発明の実施の形態1に係る送受信モジュールのマイクロ波帯域における帯域阻止フィルタ(BRF)について説明する図である。It is a figure explaining the band stop filter (BRF) in the microwave band of the transmission / reception module which concerns on Embodiment 1 of this invention. この発明の実施の形態1に係る送受信モジュールのフィルタ装荷接続ピンの外観図である。It is an external view of the filter loading connection pin of the transmission / reception module which concerns on Embodiment 1 of this invention. この発明の実施の形態1に係る送受信モジュールの多層基板のパターンを層別に説明する図であり、図6(a)は、一方の表層パターン、図6(b)は内層パターン、図6(c)は他方の表層パターンを示す。It is a figure explaining the pattern of the multilayer substrate of the transmission / reception module which concerns on Embodiment 1 of this invention according to a layer, FIG.6 (a) is one surface layer pattern, FIG.6 (b) is an inner layer pattern, FIG.6 (c). ) Indicates the other surface layer pattern. この発明の実施の形態1に係る送受信モジュールのフィルタ装荷接続ピンの部分断面図である。It is a fragmentary sectional view of the filter loading connection pin of the transmission / reception module which concerns on Embodiment 1 of this invention. この発明の実施の形態2に係る送受信モジュールのフィルタ装荷接続ピンの外観図である。It is an external view of the filter loading connection pin of the transmission / reception module which concerns on Embodiment 2 of this invention. この発明の実施の形態2に係る送受信モジュールの多層基板のパターンを層別に説明する図であり、図9(a)は、一方の表層パターン、図9(b)は内層パターン、図9(c)は内層地導体パターン、図9(d)は内層パターン、図9(e)は他方の表層パターンをそれぞれ示す。It is a figure explaining the pattern of the multilayer board | substrate of the transmission / reception module which concerns on Embodiment 2 of this invention according to a layer, Fig.9 (a) is one surface layer pattern, FIG.9 (b) is an inner layer pattern, FIG.9 (c). ) Shows the inner layer ground conductor pattern, FIG. 9D shows the inner layer pattern, and FIG. 9E shows the other surface layer pattern. この発明の実施の形態2に係る送受信モジュールのフィルタ装荷接続ピンの部分断面図である。It is a fragmentary sectional view of the filter loading connection pin of the transmission / reception module which concerns on Embodiment 2 of this invention. この発明の実施の形態2に係る送受信モジュールの伝送損失を説明する図である。It is a figure explaining the transmission loss of the transmission / reception module which concerns on Embodiment 2 of this invention. この発明の実施の形態1に係る送受信モジュールの3層の多層基板の内層にに2個のオープンスタブを設けた場合の内層パターン図である。It is an inner layer pattern figure at the time of providing two open stubs in the inner layer of the three-layer multilayer board | substrate of the transmission / reception module which concerns on Embodiment 1 of this invention. この発明の実施の形態3に係る送受信モジュールの3層の多層基板を用いたフィルタ装荷接続ピンの外観図である。It is an external view of the filter loading connection pin using the 3 layer multilayer board | substrate of the transmission / reception module which concerns on Embodiment 3 of this invention. この発明の実施の形態3に係る送受信モジュールの5層の多層基板を用いた場合のフィルタ装荷接続ピンの外観図である。It is an external view of the filter loading connection pin at the time of using the multilayer substrate of 5 layers of the transmission / reception module which concerns on Embodiment 3 of this invention.

符号の説明Explanation of symbols

1・・高周波伝送回路(高周波回路) 1a・・第1系統の送受信系RF回路
1b・・第2系統の送受信系RF回路 2・・金属支持台
3・・制御回路 3a・・基板 4・・多層基板 5・・ピン電極
6・・金ワイヤ(第1電気接続手段) 7・・Niリボン(第2電気接続手段)
8・・筐体 8a・・中板 8b・・貫通部 8c・・貫通部
9・・電子部品 10・・ネジ 11・・移相器 12・・送受信切換回路
13・・送信電力増幅部、 14・・受信電力増幅部 15・・送受信切換部
16・・フィルタ装荷接続ピン 17・・アンテナ
18・・オープンスタブ 19・・信号パターン
20・・スルーホール部 21・・ピン接続部 22・・グランドビア
40・・多層基板
180・・オープンスタブ 181・・オープンスタブ 200・・電波吸収材
1..High frequency transmission circuit (high frequency circuit) 1a..First system transmission / reception system RF circuit 1b..Second system transmission / reception system RF circuit 2..Metal support base 3..Control circuit 3a..Board 4 .. Multi-layer substrate 5 ・ ・ Pin electrode 6 ・ ・ Gold wire (first electrical connecting means) 7 ・ ・ Ni ribbon (second electrical connecting means)
8, casing 8a, middle plate 8b, penetrating part 8c, penetrating part 9, electronic component 10, screw 11, phase shifter 12, transmission / reception switching circuit 13, transmission power amplifying part 14 ..Receiving power amplifier 15 ..Transmission / reception switching unit 16 ..Filter loading connection pin 17 ..Antenna 18 ..Open stub 19 ..Signal pattern 20 ..Through hole portion 21 ..Pin connection portion 22. 40. Multi-layer substrate 180 Open stub 181 Open stub 200 Electromagnetic wave absorber

Claims (5)

金属支持台に固定され、電力増幅部を含む高周波伝送回路と、この高周波伝送回路に離間して前記電力増幅部の電力を制御する制御信号を送出する制御回路と、表裏面に地導体を有し、内層に設置した信号線にオープンスタブでパターン形成した帯域阻止回路を設けた多層基板と、この多層基板の前記信号線の一端側と電気接続すると共に前記多層基板に固定したピン電極と、このピン電極を含む前記信号線の一方を前記高周波伝送回路に接続する第1電気接続手段と、前記ピン電極を含む前記信号線の他方を前記制御回路に接続する第2電気接続手段とを備え、前記信号線を通過する所望帯域周波数以外の不要波周波数を前記帯域阻止回路で阻止する送受信モジュール。 A high-frequency transmission circuit that is fixed to a metal support and includes a power amplification unit, a control circuit that sends a control signal to control the power of the power amplification unit apart from the high-frequency transmission circuit, and a ground conductor on the front and back surfaces. A multilayer substrate provided with a band rejection circuit patterned with an open stub on the signal line installed in the inner layer, and a pin electrode electrically connected to one end side of the signal line of the multilayer substrate and fixed to the multilayer substrate; First electrical connection means for connecting one of the signal lines including the pin electrode to the high-frequency transmission circuit, and second electrical connection means for connecting the other of the signal line including the pin electrode to the control circuit. A transmission / reception module for blocking unnecessary wave frequencies other than a desired band frequency passing through the signal line by the band blocking circuit. 前記帯域阻止回路のオープンスタブ形成面周囲は、前記多層基板の表裏面と共通接続された地導体パターンで形成されている請求項1に記載の送受信モジュール。 The transmission / reception module according to claim 1, wherein a periphery of an open stub forming surface of the band rejection circuit is formed by a ground conductor pattern commonly connected to the front and back surfaces of the multilayer substrate. 金属支持台に固定され、電力増幅部を含む高周波伝送回路と、この高周波伝送回路に離間して前記電力増幅部の電力を制御する制御信号を送出する制御回路と、表裏面に地導体を有し、表面側の地導体に隣接した第1内層に設置した第1信号線にオープンスタブでパターン形成した第1帯域阻止回路を設け、前記第1内層の反対面に隣接した第2内層を地導体とし、この第2内層に隣接し、反対面を裏面側の地導体と隣接した第3内層に設置した第2信号線に前記第1帯域阻止回路のオープンスタブ長とは異なる第2帯域阻止回路を設けた多層基板と、この多層基板の前記第1信号線と前記第2信号線とを共通接続する前記多層基板のスルーホール部と、共通接続された前記第1信号線と前記第2信号線の一端側と電気接続すると共に前記多層基板に固定したピン電極と、このピン電極を含む前記第1信号線及び前記第2信号線の一方を前記高周波伝送回路に接続する第1電気接続手段と、前記ピン電極を含む前記第1信号線及び前記第2信号線の他方を前記制御回路に接続する第2電気接続手段とを備え、前記第1信号線及び前記第2信号線を通過する所望帯域周波数以外の不要波周波数を前記第1帯域阻止回路及び前記第2帯域阻止回路で帯域阻止する送受信モジュール。 A high-frequency transmission circuit that is fixed to a metal support and includes a power amplification unit, a control circuit that sends a control signal to control the power of the power amplification unit apart from the high-frequency transmission circuit, and a ground conductor on the front and back surfaces. The first signal line placed on the first inner layer adjacent to the ground conductor on the surface side is provided with a first band stop circuit patterned with an open stub, and the second inner layer adjacent to the opposite surface of the first inner layer is grounded. A second band rejection different from the open stub length of the first band rejection circuit on a second signal line installed on a third inner layer adjacent to the second inner layer and having the opposite surface adjacent to the ground conductor on the back side. A multilayer substrate provided with a circuit; a through-hole portion of the multilayer substrate commonly connecting the first signal line and the second signal line of the multilayer substrate; the commonly connected first signal line and the second signal; It is electrically connected to one end of the signal line and A pin electrode fixed to the substrate; a first electrical connection means for connecting one of the first signal line and the second signal line including the pin electrode to the high-frequency transmission circuit; and the first signal including the pin electrode. A second electrical connection means for connecting the other of the second signal line and the second signal line to the control circuit, and an unnecessary wave frequency other than a desired band frequency passing through the first signal line and the second signal line is set in the first signal line. A transmission / reception module for blocking a band by a first band blocking circuit and the second band blocking circuit. 前記第1帯域阻止回路及び前記第2帯域阻止回路のオープンスタブ形成面周囲は、前記多層基板の表裏面と共通接続された地導体パターンで形成されている請求項3に記載の送受信モジュール。 The transmission / reception module according to claim 3, wherein the periphery of the open stub forming surface of the first band rejection circuit and the second band rejection circuit is formed by a ground conductor pattern commonly connected to the front and back surfaces of the multilayer substrate. 前記ピン電極は、外周が電波吸収材で覆われている請求項1乃至4のいずれか1項に記載の送受信モジュール。 The transmitting / receiving module according to claim 1, wherein an outer periphery of the pin electrode is covered with a radio wave absorber.
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