JP2009094738A - Radiation type oscillator and radio relay system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high performance radiation type oscillator for radiating from both faces of a board with low ground inductance, to increase a radio transmission distance. <P>SOLUTION: The plane radiation type oscillator 1 comprises: a planar board 108; a high electronic mobility transistor 101; coplanar type open-ended lines 102a, 102b; and a bonding wire 106. The high electronic mobility transistor 101 is die-bonded onto a ground conductor 104. Further, the ground conductor is electrically connected to a gate (not shown) of the high electronic mobility transistor 101, drains (not shown) of the coplanar type open-ended line 102a and the high electronic mobility transistor 101, and sources (not shown) of the open-ended line 102b and the high electronic mobility transistor 101 through the bonding wire 106, respectively. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a radiation type oscillation device using microwaves and millimeter waves and a radio relay system including the same.

  With regard to wireless transmission of high-definition video signals that has been attracting attention in recent years, development of a wireless video transmission device using millimeter waves that can secure a wide band has been attempted because large-capacity information needs to be transmitted. In the millimeter wave band, when an antenna and a high-frequency circuit are separately formed and connected by a connector or the like, power loss at the connection portion increases. Therefore, development of an apparatus in which a high-frequency circuit and a planar antenna are integrated has been attempted.

  As an example of such a device, there is a microwave millimeter wave radiation type oscillation device disclosed in Patent Document 1, for example, as shown in FIG.

  The pair of fan-shaped conductor patches 19 are arranged so that the center portions thereof are close to each other and the arc portions are opposed to each other. The pair of fan-shaped conductor patches 19 includes a field-effect high-frequency transistor 12 having a gate and a drain connected to a different one of the pair of fan-shaped conductor patches 19, respectively, and a source grounded, and the pair of fan-shaped conductor patches 19. It consists of a conductor plane extending in parallel with the conductor patch 19. The distance between the pair of fan-shaped conductor patches 19 and the conductor plane extending in parallel is between 1/15 to 1/5 of the wavelength. Further, the radius of the fan-shaped conductor patch 19 is approximately one quarter of the oscillation wavelength. The fan-shaped conductor patch 19 is connected to a separate DC power source whose source is the ground potential by the DC bias line 11.

  According to the microwave millimeter-wave radiation type oscillation device having the above-described configuration, the pair of fan-shaped conductor patches 19 have resonance characteristics with respect to electromagnetic waves whose lengths at both ends are substantially equal to a half wavelength, and conductors extending in parallel with the fan-shaped conductor patch surface. The distance from the plane is as large as about 3 to 10 times the thickness of a circuit board used for a normal strip line or a planar antenna substrate. For this reason, the pair of fan-shaped conductor patches 19 does not become a planar antenna matched with the space at the resonance frequency, but becomes a planar resonator that is weakly coupled to the space.

  The field effect type high-frequency transistor 12 at the center of the pair of fan-shaped conductor patches 19 has its gate and drain connected to different ones of the pair of fan-shaped conductor patches 19, each DC biased, and the source grounded. A grounding high-frequency amplifier is formed. The high frequency and the noise signal generated on the gate side of 12 are amplified to induce a high frequency current in the fan-shaped conductor patch 19 connected to the drain, and a high-frequency electromagnetic wave is generated between the fan-shaped conductor patch 19 and the parallel conductor surface 21 on the back surface. After the field is guided and propagates in the radial direction and reaches the tip of the fan-shaped conductor patch 19, most of the light is reflected and returns to the opposite direction. Further, it propagates and reciprocates on the other one side of the fan-shaped conductor patch 19, enters the gate side of the central field effect type high-frequency transistor 12, and is re-amplified. The waveguide formed by the pair of fan-shaped conductor patches 19 and the parallel conductor plane on the back surface forms a feedback circuit of the amplifier by the high-frequency transistor 12.

In this feedback circuit, the oscillation grows for a frequency component that coincides with the resonance frequency corresponding to the length of both ends of the pair of fan-shaped conductor patches 19, and that the feedback from the output of the amplifier to the input satisfies the positive feedback phase relationship, Energy is stored in the planar resonator of the pair of fan-shaped conductor patches 19. Part of the high-frequency energy accumulated from the planar resonator composed of the pair of fan-shaped conductor patches 19 and the high-frequency transistor 12 that are weakly coupled to the space is radiated to the space as a radiation output 22 at a constant rate in a steady state. . By selecting an interval between a plane of the conductors extending in parallel with the surfaces of the pair of fan-shaped conductor patches 19 between 1/15 and 1/5 of the wavelength, the space at the resonance frequency of the pair of fan-shaped conductor patches 19 Alignment can be selected.
Japanese Patent Laid-Open No. 11-31918 (published February 2, 1999)

  However, the microwave millimeter wave radiation type oscillation device having the above configuration has the following problems.

  First, since there is a conductor plane on the back surface of the substrate, power emission is limited to one direction only in the direction of the surface of the substrate.

  Further, since the microwave millimeter wave radiation type oscillation device uses a substrate having a thickness of about 3 to 10 times the thickness of the circuit substrate used for the planar antenna substrate, the ground of the high frequency transistor is used as the conductor of the substrate. When connecting to a flat surface, a long through hole is required. If a long through hole is used, the ground inductance of the high-frequency transistor increases, so that the original performance of the transistor cannot be exhibited, and the performance of the oscillation device is limited.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a high-performance radiating oscillator that radiates from both sides of a substrate and has a small ground inductance.

  In order to solve the above problems, a radiation type oscillation device according to the present invention has a planar substrate having a conductor ground plane only on one surface, and a signal amplifying means mounted on the conductor ground plane in the plane substrate, An open-ended line connected to each of an input terminal and an output terminal of the signal amplification means, and the open-ended line is a coplanar line formed on the conductor ground plane of a flat substrate. .

  In this configuration, a planar antenna composed of a planar substrate having a conductor grounding surface only on one surface is integrated with an oscillator composed of signal amplification means, and the planar substrate has a conductor grounding surface only on one surface. Therefore, it is possible to radiate an oscillation wave from both sides of the planar antenna. In addition, since the signal amplification means is mounted on the conductor ground plane and the open end type line is formed, a through hole for connecting the die bond portion of the transistor and the back ground conductor is formed like a microstrip line. It becomes unnecessary. As a result, the gain reduction of the high electron mobility transistor due to the ground inductance can be avoided, so that a stable oscillation state is possible.

  In the radiating oscillator, it is preferable that the electrical length of the open-ended line is about ¼ of the wavelength of the oscillation wave. By setting the open end type line as described above, it is possible to oscillate at a desired frequency.

  In the radiating oscillator, the signal amplification means is preferably flip-chip mounted on a flat substrate. Thereby, the inductance of the flip chip mounting connection portion can be reduced. Therefore, the performance of the signal amplifying means can be fully exploited, and stable oscillation can be achieved.

  In the radiating oscillator, the signal amplification means is preferably an integrated circuit in which one or more active elements and a matching circuit are integrated on a single semiconductor chip. Thus, by using an integrated circuit as the signal amplifying means, the gain of the signal amplifying means can be increased, and further stable oscillation is possible.

  In the radiation type oscillation device, it is preferable that the matching circuit is formed so that a positive feedback is applied to a passing phase between input and output of the integrated circuit at an oscillation frequency. This makes it possible to reliably satisfy the oscillation condition at a desired frequency and realize a stable oscillation operation.

  In the radial oscillation device, it is preferable that the planar substrate is formed of a flexible printed circuit board. As a result, it is possible to reduce the weight of the radiation type oscillation device, and it is possible to obtain a substantially symmetrical radiation pattern on both surfaces of the flat substrate.

  It is preferable that the radiation type oscillation device further includes a dielectric lens disposed so that a focal point thereof is positioned in the vicinity of the signal amplification means. Thereby, the communication distance can be increased.

  It is preferable that the dielectric lens is disposed on both the conductor ground plane side and the opposite side of the planar substrate. Thereby, the communication distance can be increased before and after the flat substrate. Moreover, it is preferable that the dielectric lens disposed on the conductor ground plane side and the dielectric lens disposed on the opposite surface side have different opening diameters. Thereby, in addition to the above effect, the communication distance and the radiation angle can be set independently on each of the both surfaces of the flat substrate.

  A radio relay system according to the present invention includes a transmitter that radiates a modulated wave, a radiating oscillator that receives and radiates a modulated wave from the transmitter, and a receiver that receives the modulated wave radiated from the radiating oscillator. And the radiating oscillator is a radiating oscillator provided with a dielectric lens.

  In this configuration, it is possible to increase the communication distance and change the radiation angle of the radio wave at the relay point. As a result, the degree of freedom in the layout of the transmitter and the receiver can be increased.

  As described above, the radiating oscillator according to the present invention includes a planar substrate having a conductor ground plane on only one surface, signal amplification means mounted on the conductor ground plane in the planar substrate, and the signal amplification. Open-ended line connected to each of the input terminal and the output terminal of the means, and the open-ended line is a coplanar line formed on the conductor ground plane of the flat board, so that both sides of the flat board are Since radio waves can be emitted, a flexible layout of the wireless relay system is possible. Furthermore, since the open end type line is formed of a coplanar line, it becomes possible to connect the ground of the signal amplifying means and the ground of the double-sided board without going through a through hole, so that the gain of the signal amplifying means increases, A more stable oscillation operation is possible.

  An embodiment of the present invention will be described with reference to FIGS. 1 to 11 as follows.

[First Embodiment]
FIG. 1 is a plan view showing a planar emission type oscillator 1 according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view showing the planar emission type oscillator 1.

  As shown in FIGS. 1 and 2, the planar emission type oscillation device 1 includes a high electron mobility transistor 101, coplanar type open-ended lines 102 a and 102 b, a bonding wire 106, and a planar substrate 108.

  In FIG. 1, the planar substrate 108 is not shown for convenience.

  The coplanar type open end type lines 102a and 102b have a structure in which ground conductors (ground planes) are formed on both sides of a signal line provided in the center on the same surface (front surface) of the flat substrate 108 (broken line in the figure). ). In addition, no conductor is formed on the surface (back surface) opposite to the surface on which the coplanar type open-ended lines 102a and 102b of the flat substrate 108 are formed.

  The high electron mobility transistor 101 is die-bonded on a ground conductor 104 disposed at an intermediate position between the coplanar tip open-type lines 102a and 102b. Also, the gate (not shown) of the high electron mobility transistor 101 and the coplanar type open-ended line 102a, the drain (not shown) of the high electron mobility transistor 101, the coplanar type open-ended line 102b, and the high electron mobility. The source (not shown) of the transistor 101 and the ground conductor are electrically connected to each other through bonding wires 106. The high electron mobility transistor 101 is operated by being supplied with a drain voltage and a gate voltage from the bias line 107.

  As the material of the flat substrate 108, a material generally used in a high frequency circuit such as a resin material such as glass epoxy or Teflon (registered trademark), a ceramic material such as low-temperature fired glass ceramic or alumina can be used.

  Next, the operation principle will be described. A noise signal generated on the gate side of the high electron mobility transistor 101 is amplified by the high electron mobility transistor 101 and transmitted to the coplanar type open-ended line 102b. The noise signal reflected at the tip of the coplanar open-ended line 102b is transmitted to the coplanar open-ended line 102a, reflected at the tip of the coplanar open-ended line 102a, and incident on the gate of the high electron mobility transistor 101. And amplified again. The noise signal originally has a uniform power density with respect to the frequency, but only the frequency component where the phase of feedback from the output of the amplifier to the input becomes zero grows and oscillates. Due to this oscillation, high-frequency energy is accumulated in the coplanar type open-ended lines 102a and 102b, but a part of the high-frequency energy is radiated as a radiated wave in a steady state. Since there is no conductor on the back surface of the flat substrate 108, the radiated wave is radiated not only from the front surface side of the flat substrate 108 but also from the back surface side.

  By setting the electrical length of the coplanar type open-end lines 102a and 102b (the length considering the dielectric constant of the substrate) to about ¼ wavelength with respect to the frequency of the radiated wave, the end of the coplanar type open-type line 102b Among the signals of various frequency components that repeat reflection at the tip of the coplanar type open-ended line 102a, the frequency component of the radiated wave grows as a standing wave, so that it can be oscillated at a desired frequency. . Although the shape of the coplanar type open-end lines 102a and 102b is a strip shape having the same width here, a fan shape (radial stub) or the like may be used.

  By adopting the coplanar type open end type lines 102a and 102b, the ground conductor is formed in the same plane as the signal line, so that a through hole for connecting the die bond portion of the transistor and the back side ground conductor like a microstrip line is formed. Is no longer necessary.

  As a result, a decrease in gain of the high electron mobility transistor due to the ground inductance can be avoided, so that a stable oscillation state is possible.

  Although the example using the high electron mobility transistor 101 is shown here as the signal amplification means, a heterojunction bipolar formed on a gallium arsenide substrate, an indium phosphorus substrate, a silicon germanium substrate, or the like may be used.

  On the other hand, the characteristic impedance and radiation resistance of the open-ended line can be optimized by designing the central conductor width of the coplanar open-ended lines 102a and 102b and the distance between the central conductor and the ground conductor to be optimal. Highly efficient power radiation is possible.

[Second Embodiment]
FIG. 3 is a plan view showing a planar emission type oscillator 2 according to the second embodiment of the present invention. FIG. 4 is a cross-sectional view showing the planar emission type oscillator 2.

  As shown in FIGS. 3 and 4, the planar emission type oscillation device 2 includes a high electron mobility transistor 201, coplanar type open-ended lines 202 a and 202 b, and a planar substrate 208. The planar emission type oscillation device 2 is different from the planar emission of the first embodiment in that a bare chip high electron mobility transistor 201 is connected to a ground conductor via a bump 206 on a planar substrate 208 and is flip-chip mounted. Different from the type oscillator 1.

  When the high electron mobility transistor 201 is flip-chip mounted, the inductance of the connection portion can be reduced as compared with wire bond mounting. As a result, the performance of the high electron mobility transistor 201 can be sufficiently obtained, so that stable oscillation is possible. In particular, when the oscillation frequency is in the millimeter wave band such as 60 GHz, the mounting variation greatly affects the oscillation frequency and the output. Therefore, mounting variation can be reduced by flip-chip mounting the high electron mobility transistor 201. It is valid.

[Third Embodiment]
FIG. 5 is a plan view showing a planar emission type oscillator 3 according to the third embodiment of the present invention. FIG. 6 is a cross-sectional view showing the planar emission type oscillator 3.

  As shown in FIGS. 5 and 6, the planar emission type oscillation device 3 includes a high electron mobility transistor 301, coplanar type open-ended lines 302 a and 302 b, and a planar substrate 308. The planar radiation type oscillation device 3 is different from the planar radiation type oscillation device 2 of the second embodiment in that a flexible printed circuit board is used for the planar substrate 308. Thereby, weight reduction of an apparatus can be achieved.

  In addition, by using the coplanar type open end lines 302a and 302b, the center conductor width of the coplanar type open end lines 302a and 302b and the distance between the central conductor and the ground conductor can be used even if an ultrathin substrate such as a flexible printed circuit board is used. By designing the distance at an optimum interval, the characteristic impedance and the radiation resistance can be optimized, and highly efficient power radiation becomes possible. Furthermore, in the present embodiment, since the dielectric layer of the planar substrate 308 is thin, a substantially symmetric radiation pattern can be obtained on the front surface and the back surface of the planar substrate 308.

  Here, an example in which the high electron mobility transistor 301 is flip-chip mounted is shown, but wire-bonded mounting may be performed as in the first embodiment.

[Fourth Embodiment]
FIG. 7 is a plan view showing a plane emission type oscillator 4 according to the fourth embodiment of the present invention. FIG. 8 is a cross-sectional view showing the planar radiation type oscillation device 4.

  As shown in FIGS. 7 and 8, the planar emission type oscillation device 4 includes an integrated circuit 401, coplanar type open-ended lines 402 a and 402 b, and a planar substrate 408. The planar emission type oscillation device 4 is the planar emission type oscillation device according to the first embodiment in that an integrated circuit 401 having an amplification function is used as a signal amplification means instead of the discrete high electron mobility transistor 101. Different from 1.

  The integrated circuit 401 is die-bonded on a ground conductor 405 disposed in the middle of the coplanar type tip open type lines 402a and 402b. Further, the integrated circuit 401 is electrically connected to the coplanar tip open type lines 402 a and 402 b and the plurality of bias lines 407 via bonding wires 406. The integrated circuit 401 is in an operating state when a DC voltage is supplied to an internal active element by a bias line 407.

  The integrated circuit 401 is obtained by integrating one or more active elements and a matching circuit on one semiconductor chip. The integrated circuit 401 is formed, for example, by integrating a matching circuit composed of active elements such as a high electron mobility transistor and a heterojunction bipolar transistor and passive elements such as a transmission line and a capacitor on a gallium arsenide substrate. The Since such an integrated circuit 401 can gain more than a discrete component such as the high electron mobility transistor 101, a high-performance oscillation device can be realized.

  Further, the matching circuit is designed such that a positive feedback is applied to the passing phase between the input and output of the integrated circuit 401 at the oscillation frequency. As a result, by connecting an open-ended line to the integrated circuit 401, the oscillation condition is surely satisfied, so that a stable oscillation operation is possible.

  Note that the integrated circuit 401 may be flip-chip mounted in the same manner as the high electron mobility transistor 201 of the second embodiment.

[Fifth Embodiment]
FIG. 9 is a cross-sectional view showing a planar emission type oscillator 5 according to a fifth embodiment of the present invention.

  As shown in FIG. 9, the planar emission type oscillation device 5 includes a high electron mobility transistor 501, coplanar type open-ended lines 502 a and 502 b, a planar substrate 508, and a dielectric lens 511. The planar emission type oscillator 5 is different from the planar emission type oscillator 1 of the first embodiment in that a dielectric lens 511 is provided.

  The dielectric lens 511 is disposed on the substrate 510 so that the vicinity of the focal point becomes the high electron mobility transistor 501. The substrate 510 is arranged in parallel with the flat substrate 508 with a space therebetween, and has a through hole 510 a for allowing the radiation wave from the high electron mobility transistor 501 to pass therethrough. The dielectric lens 511 can be made of a low-loss resin material such as high-density polyethylene or Teflon (registered trademark), ceramic, or the like.

  The radiation origin of the antenna formed by the coplanar type open-end lines 502a and 502b is the midpoint of the coplanar type open-end lines 502a and 502b, that is, the high electron mobility transistor 501. Therefore, if the focal point of the dielectric lens 511 is geometrically optically arranged in the vicinity of the high electron mobility transistor 501, a radiated wave that is considered to be emitted from the radiation origin enters the dielectric lens 511, and It is refracted on the surface and emitted into space as a plane wave.

  The larger the aperture of the dielectric lens 511, the higher the antenna gain and the sharper the antenna radiation angle. Therefore, by selecting an appropriate opening of the dielectric lens 511, the degree of freedom in setting the communication distance and the radiation angle is increased.

[Sixth Embodiment]
FIG. 10 is a cross-sectional view showing a planar emission type oscillator 6 according to a sixth embodiment of the present invention.

  As shown in FIG. 10, the planar emission type oscillation device 6 includes a high electron mobility transistor 601, coplanar type open-ended lines 602a and 602b, a planar substrate 608, and dielectric lenses 611a and 611b. The planar radiation type oscillator 6 is different from the planar radiation type oscillator 5 of the fifth embodiment in that it includes two dielectric lenses 611a and 611b.

  The dielectric lens 611a is arranged on the substrate 610 so that the vicinity of the focal point becomes the high electron mobility transistor 601. The substrate 610 is arranged in parallel to the flat substrate 608 at a distance from the high electron mobility transistor 601 side of the flat substrate 608. The substrate 610 has a through hole 610 a for allowing the radiation wave from the high electron mobility transistor 604 to pass therethrough. On the other hand, the substrate 612 is arranged in parallel to the flat substrate 608 at a distance from the flat substrate 608 on the opposite side of the substrate 610. The substrate 612 has a through hole 612 a for allowing the radiation wave from the high electron mobility transistor 604 to pass therethrough. Similarly to the dielectric lens 511, the dielectric lenses 611a and 611b can be made of a low-loss resin material such as high-density polyethylene or Teflon (registered trademark), ceramic, or the like.

  The sizes of the dielectric lenses 611a and 611b are not necessarily the same, and may be different from each other as shown in FIG.

  Thus, by disposing the dielectric lenses 611a and 611b on both sides of the flat substrate 608, the degree of freedom in setting the communication distance and the radiation angle is increased in each direction.

[Seventh Embodiment]
FIG. 11 is a front view showing the configuration of the wireless relay system 7 using the oscillation device shown in FIG.

  As shown in FIG. 11, the wireless relay system 7 includes a 60 GHz band transmitter 701, an oscillation device 702, dielectric lenses 711a and 711b, and 60 GHz band receivers 703a, 703b, and 703c. The oscillation device configured by the oscillation device 702 and the dielectric lenses 711a and 711b corresponds to the plane emission type oscillation device 6.

  The oscillation device 702 freely oscillates in the vicinity of 60 GHz, and radiates to the front and rear spaces by the dielectric lenses 711a and 711b. Next, when a 60 GHz band modulated wave is radiated from the 60 GHz band transmitter 701 and the 60 GHz modulated wave is incident on the oscillation device 702 via the dielectric lens 711 a, the 60 GHz band modulation wave is transferred to the high electron in the oscillation device 702. The free oscillation wave of the oscillation device 702 is synchronized with the 60 GHz band modulation wave. As a result, a 60 GHz band modulated wave is radiated from before and after the oscillation device 702. The 60 GHz band modulated wave radiated from the dielectric lens 711b of the oscillation device 702 is incident on the 60 GHz band receivers 703a, 703b, and 703c, and the reception is completed.

  In the dielectric lens 711a, the antenna gain increases as the aperture increases, and the injection locking width with respect to the 60 GHz band modulated wave becomes wider. Further, if the opening of the dielectric lens 711b is set to be relatively small, the radiation angle is widened, and it becomes possible to relay to a plurality of receivers such as 60 GHz band receivers 703a, 703b, and 704c.

  As described above, by using the oscillation device of the present embodiment for the wireless relay system 7, it is possible to increase the communication distance and change the radiation angle of the radio wave at the relay point. As a result, the flexibility of the layout of the transmitter and the receiver is increased.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

  The radiation type oscillation device of the present invention is effective in realizing a small and high-performance wireless repeater, and can be used for a high-definition video signal wireless transmission device and the like.

It is a top view which shows the structure of the radiation type oscillation apparatus which concerns on the 1st Embodiment of this invention. 1 is a cross-sectional view showing a configuration of a radiation type oscillation device according to a first embodiment of the present invention. It is a top view which shows the structure of the radiation type oscillation apparatus which concerns on the 2nd Embodiment of this invention. It is a cross section which shows the structure of the radiation type oscillation apparatus which concerns on the 2nd Embodiment of this invention. It is a top view which shows the structure of the radial oscillation apparatus which concerns on the 3rd Embodiment of this invention. It is a cross section which shows the structure of the radiation type oscillation apparatus which concerns on the 3rd Embodiment of this invention. It is a top view which shows the structure of the radial oscillation apparatus which concerns on the 4th Embodiment of this invention. It is a cross section which shows the structure of the radiation type oscillation apparatus which concerns on the 4th Embodiment of this invention. It is a top view which shows the structure of the radial oscillation apparatus which concerns on the 5th Embodiment of this invention. It is a cross section which shows the structure of the radiation type oscillation apparatus which concerns on the 5th Embodiment of this invention. It is a top view which shows the structure of the radio relay system which concerns on the 6th Embodiment of this invention. It is a top view which shows the structure of the conventional radiation type | mold oscillation apparatus.

Explanation of symbols

1 to 6 Planar emission type oscillator 7 Wireless relay system 101, 201, 301, 401, 501 High electron mobility transistor (signal amplification means)
102a, 102b, 202a, 202b, 302a, 302b, 402a, 402b, 502a, 502b Coplanar type tip open type line 206 Bump 108, 208, 308, 408, 508 Planar substrate 511, 611a, 611b, 711a, 711b Dielectric lens 701 60 GHz transmitter transmitter (transmitter)
703a, 703b 60 GHz band receiver (receiver)

Claims (10)

A planar substrate having a conductor ground plane on only one side;
Signal amplifying means mounted on the conductor ground plane in the planar substrate;
An open-ended line connected to each of the input terminal and the output terminal of the signal amplification means,
The radiating oscillator characterized in that the open-ended line is a coplanar line formed on the conductor ground plane of a flat substrate.   2. The radiating oscillator according to claim 1, wherein the electrical length of the open-ended line is a length corresponding to ¼ of the wavelength of the oscillation wave.   3. The radiation type oscillator according to claim 1, wherein the signal amplifying means is flip-chip mounted on the planar substrate.   3. The radiating oscillator according to claim 1, wherein the signal amplifying means is an integrated circuit in which one or more active elements and a matching circuit are integrated on one semiconductor chip.   5. The radiating oscillator according to claim 4, wherein the matching circuit is formed so that a positive feedback is applied to a passing phase between input and output of the integrated circuit at an oscillation frequency.   The radiating oscillator according to claim 1, wherein the planar substrate is a flexible printed circuit board.   The radiating oscillator according to claim 1, further comprising a dielectric lens disposed so that a focal point thereof is positioned in the vicinity of the signal amplification unit.   The radiating oscillator according to claim 7, wherein the dielectric lens is disposed on both the conductor ground plane side and the opposite side of the planar substrate.   9. The radial oscillation according to claim 8, wherein the dielectric lens disposed on the conductor ground plane side and the dielectric lens disposed on the opposite surface side have different opening diameters. apparatus. A transmitter that emits a modulated wave;
A radiation type oscillation device that receives and emits a modulated wave from the transmitter;
A receiver for receiving the modulated wave radiated from the radiation type oscillation device,
The radio relay system according to claim 7, wherein the radiation oscillator is the radiation oscillator according to claim 7.

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