JP3355337B2 - Planar radiation type oscillation device - Google Patents
Planar radiation type oscillation deviceInfo
- Publication number
- JP3355337B2 JP3355337B2 JP2000060115A JP2000060115A JP3355337B2 JP 3355337 B2 JP3355337 B2 JP 3355337B2 JP 2000060115 A JP2000060115 A JP 2000060115A JP 2000060115 A JP2000060115 A JP 2000060115A JP 3355337 B2 JP3355337 B2 JP 3355337B2
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- JP
- Japan
- Prior art keywords
- conductor
- oscillation
- frequency
- patch
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高周波発振のため
の共振器を空間への電磁波放射のためのアンテナ機能と
共用し、高い周波数領域で問題となる導波路の損失と結
合部・変換部での特性劣化を避け、高い効率のマイクロ
波ミリ波帯の無線通信装置、電波計測装置技術に利用で
きるマイクロ波ミリ波帯の無線装置技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resonator for high-frequency oscillation which is shared with an antenna function for radiating electromagnetic waves to a space, and which causes a problem in a high frequency region, such as a loss of a waveguide and a coupling / converting portion. The present invention relates to a high-efficiency microwave / millimeter-wave band wireless communication device and a microwave / millimeter-wave band wireless device technology that can be used for radio wave measurement device technology.
【０００２】[0002]
【従来の技術】現在実用化されている各種の無線通信装
置の他に、レーダ装置及びラジオメータ等の電波計測装
置を含む従来からの無線装置は、アンテナ装置技術と、
高周波回路技術を主体とした送信・受信装置技術との組
み合わせで構成されている。2. Description of the Related Art In addition to various radio communication devices currently in practical use, conventional radio devices including a radio wave measuring device such as a radar device and a radiometer are based on antenna device technology.
It is composed of a combination with transmission / reception device technology mainly using high-frequency circuit technology.
【０００３】目的に応じた電磁波の放射及び到来する電
磁波信号の受信を効率よく行うためのアンテナ装置技術
と、信号処理・制御を扱う送信装置と、受信装置のため
の高周波回路技術とは、長い間に亘って相互に独立した
技術分野を形成してきた。An antenna device technology for efficiently emitting electromagnetic waves and receiving an incoming electromagnetic wave signal according to a purpose, a transmitting device for processing and controlling signals, and a high-frequency circuit technology for a receiving device are long. In between, they have formed mutually independent technical fields.
【０００４】共通の基本条件は、アンテナ入力インピー
ダンスと回路の出力インピーダンスとの整合を確保する
ことであった。A common basic condition has been to ensure matching between the antenna input impedance and the circuit output impedance.
【０００５】一方、通信装置に関連する技術的及び社会
的背景の大きな変化が生じつつある。最近の半導体デバ
イス技術の進展により、増幅、発振、及び逓倍ミキシン
グ等の高周波回路素子機能を平面回路として集積化する
技術が開発され、それらの高周波集積回路技術は、従来
からの導波管や同軸型の各種の回路部品を相互に接続し
て装置を構成する方式に代わって、平面化且つ集積回路
化による小型軽量で高性能、且つ高信頼性と低コスト化
を同時に達成する将来の無線通信装置技術として期待さ
れるようになっている。On the other hand, the technical and social backgrounds related to communication devices are undergoing major changes. Recent developments in semiconductor device technology have led to the development of technologies that integrate high-frequency circuit element functions such as amplification, oscillation, and multiplication mixing as planar circuits. Future wireless communication that achieves small size, light weight, high performance, high reliability and low cost at the same time by flattening and integrated circuit instead of the method of interconnecting various circuit components of the mold It is expected as a device technology.
【０００６】このような技術状況の下に、アンテナと集
積回路との一体化を想定した新しいマイクロ波ミリ波技
術の開発が必要となってきている。Under such a technical situation, it is necessary to develop a new microwave / millimeter wave technology assuming integration of an antenna and an integrated circuit.
【０００７】高周波回路用半導体デバイス技術の進展
は、マイクロ波ミリ波帯の移動通信システム構成技術上
から要求される新しい装置機能や、更に高機能なアンテ
ナビーム形成技術及びマイクロ波ミリ波帯のイメージン
グ技術等の、通信・計測制御システム上の新しい機能を
実現するための技術開発への要求を生みだしている。Advances in semiconductor device technology for high-frequency circuits are due to new device functions required from the technology of configuring mobile communication systems in the microwave and millimeter wave bands, more advanced antenna beam forming technology, and imaging in the microwave and millimeter wave bands. This has created a demand for technology development to realize new functions on communication and measurement control systems such as technology.
【０００８】マイクロ波からミリ波にかけて周波数の上
昇とともに誘電損失と導体表面での導体損の増加により
伝送線路上での損失が大きな問題となり、平面アンテナ
のアレー化によるアンテナの高利得化は、給電線路上で
の損失が大きくなる他に、マイクロ波ミリ波無線装置内
での長い伝送路による接続はシステムの全体性能及び効
率を大きく低下させる。[0008] As the frequency increases from microwaves to millimeter waves, the loss on the transmission line becomes a serious problem due to the increase in dielectric loss and conductor loss on the conductor surface. In addition to increased losses on power lines, connection by long transmission lines in microwave and millimeter-wave wireless devices greatly reduces the overall performance and efficiency of the system.
【０００９】そのため、アンテナと高周波平面回路を一
体化する新しい技術の開発が重要となっているが、その
技術の開発には、今後解決されるべき困難な技術課題が
多く残されている。For this reason, it is important to develop a new technology for integrating the antenna and the high-frequency planar circuit, but there are many difficult technical problems to be solved in the future.
【００１０】以下に図面を用いて、本発明に関連する従
来技術について述べ、本発明の目的と技術上の位置づけ
を明らかにするために具体例を用いて説明する。The prior art related to the present invention will be described below with reference to the drawings, and a specific example will be described to clarify the purpose and technical position of the present invention.
【００１１】図１５は、公知の高周波帯発振装置の一構
成の概念を示す説明図であり、共振器６０と負性抵抗増
幅回路６２が導波路６１により接続され、負荷６４は負
性抵抗増幅回路６２の他の端子に導波路６３によって取
り付けられ、発振電力が共振器６０とは別のポートから
取り出される場合を示している。これは、マイクロ波以
下の周波数帯の携帯用通信装置等に広く用いられている
発振装置の構成であり、共振器６０には小型化した高誘
電率の誘電体共振器等が組み込まれている。FIG. 15 is an explanatory view showing the concept of one configuration of a known high frequency band oscillation device. A resonator 60 and a negative resistance amplifier circuit 62 are connected by a waveguide 61, and a load 64 is connected to a negative resistance amplifier. This shows a case in which the oscillation power is attached to another terminal of the circuit 62 by a waveguide 63 and taken out from a port different from the resonator 60. This is a configuration of an oscillation device widely used for a portable communication device or the like in a frequency band of microwaves or less, and a miniaturized high-permittivity dielectric resonator or the like is incorporated in the resonator 60. .
【００１２】これに対し、図１６は、発振用共振器が電
磁波の出力部分を兼ねる公知の発振装置の一構成の概念
を示す説明図であり、共振器６０の内部に負性抵抗増幅
回路６２が組み込まれ、負荷６４は発振電力を共振器外
部へ取り出すことによる損失の付加分を表している。On the other hand, FIG. 16 is an explanatory view showing the concept of one configuration of a known oscillation device in which an oscillation resonator also serves as an output portion of an electromagnetic wave. A negative resistance amplifier circuit 62 is provided inside a resonator 60. And the load 64 represents an additional loss due to taking out the oscillation power to the outside of the resonator.
【００１３】この構成例を代表するものに、増幅媒質を
共振器内部に具備するレーザー発振装置があり、この場
合に、レーザー共振器の部分透過性の反射鏡面から空間
にビームとして発振電力を取り出すことが、負荷６４に
対応している。A typical example of this configuration is a laser oscillation device having an amplifying medium inside the resonator. In this case, the oscillation power is extracted as a beam into space from the partially transmissive reflecting mirror surface of the laser resonator. Correspond to the load 64.
【００１４】図１７は、発振用共振器が電磁波の出力部
分を兼ねる公知の放射型発振装置の他の構成の概念を示
す説明図であり、共振器６０と負性抵抗増幅回路６２が
導波路６１により接続され、インピーダンスＺＬで表現
される負荷６４は高周波発振電力をビーム６３ａの形で
共振器外部へ取り出すことによる損失の付加分を表して
いる。FIG. 17 is an explanatory view showing the concept of another configuration of a known radiation type oscillating device in which an oscillating resonator also serves as an output part of an electromagnetic wave. The resonator 60 and the negative resistance amplifying circuit 62 include a waveguide. A load 64 connected by 61 and represented by impedance ZL represents an additional loss caused by extracting high-frequency oscillation power outside the resonator in the form of a beam 63a.
【００１５】この構成例は、本願の発明者等によって、
ガウシアンビーム共振器と負性抵抗増幅素子を一体化し
たマイクロ波・ミリ波帯発振装置(U.S.Patent No. 5,45
0,040）として、開示された。This configuration example is provided by the inventors of the present application.
Microwave / millimeter wave oscillator (USPatent No. 5,45) integrating Gaussian beam resonator and negative resistance amplifier
0,040).
【００１６】図１７による公知の発振装置は、原理的に
は図１６の構成に基づく装置の変形であるが、増幅媒質
を共振器外部に取り出すことにより、発振条件の制御が
可能なパラメータを２つ確保でき発振装置の技術上の有
利な条件を達成している。The known oscillating device shown in FIG. 17 is a modification of the device based on the configuration of FIG. 16 in principle. However, by taking out the amplifying medium outside the resonator, two parameters for controlling the oscillating conditions are obtained. And the technically advantageous conditions of the oscillation device are achieved.
【００１７】図１８は、図１７の構成の具体的な実施例
の一つである公知のビーム出力型マイクロ波ミリ波発振
装置の構成の概念を示す説明図であり、ここで、図１７
の共振器６０は、部分透過性の反射鏡面６０１と導体反
射鏡面６０２から成るファブリペロー型の共振器６００
であり、負性抵抗増幅回路６２は、共振器６００の導体
反射鏡面６０２の一部を成す結合領域６０３と導波路６
１とにより接続され、部分透過性の反射鏡面６０１とし
ては、２次元の導体薄膜格子等が用いられ、反射鏡面６
０１及び導体反射鏡面６０２のいずれかは、球面鏡であ
るので、共振モードは光軸を中心としたガウス分布を成
す。FIG. 18 is an explanatory view showing the concept of the configuration of a known beam output type microwave / millimeter wave oscillator which is one of the specific embodiments of the configuration of FIG. 17, and FIG.
Is a Fabry-Perot type resonator 600 including a partially transmissive reflecting mirror surface 601 and a conductor reflecting mirror surface 602.
The negative resistance amplifier circuit 62 includes a coupling region 603 that forms a part of the conductor reflection mirror surface 602 of the resonator 600 and the waveguide 6.
A two-dimensional conductive thin film grating or the like is used as the partially transparent reflecting mirror surface 601 and the reflecting mirror surface 6.
Since either 01 or the conductor reflecting mirror surface 602 is a spherical mirror, the resonance mode has a Gaussian distribution centered on the optical axis.
【００１８】更に、反射鏡面６０１の反射率は、他方の
導体反射鏡面６０２の反射率に比べて高く設定され、負
性抵抗増幅回路６２側から見た共振器６００は、見かけ
上一端子の共振器となるように、空間と弱く結合する共
振器として構成されており、共振器と負性抵抗増幅回路
６２との相互作用により発振が成長し、共振器内に蓄積
される高周波エネルギーが増加し、それとともに部分透
過性の反射鏡面６０１からガウシアンビームとして漏れ
出るビーム出力６０４の電力が増加し、負性抵抗増幅回
路６２による利得と発振出力を含むトータルの損失が釣
り合った状態で定常状態となる。Further, the reflectance of the reflecting mirror surface 601 is set higher than the reflectance of the other conductor reflecting mirror surface 602, and the resonator 600 viewed from the negative resistance amplifier circuit 62 side apparently has one terminal resonance. It is configured as a resonator that weakly couples with the space so as to form a resonator. Oscillation grows due to the interaction between the resonator and the negative resistance amplifier circuit 62, and high frequency energy stored in the resonator increases. At the same time, the power of the beam output 604 leaking out as a Gaussian beam from the partially transmissive reflecting mirror surface 601 increases, and a steady state is reached in which the gain by the negative resistance amplifier circuit 62 and the total loss including the oscillation output are balanced. .
【００１９】図１８に開示の構成では、部分透過性反射
鏡面６０１及び導体反射鏡面６０２の反射率、即ち空間
との結合強度と負性抵抗増幅回路との結合強度を独立に
設定できることから、結合領域６０３と導波路６１の組
み合わせによる位相調整を含め、発振装置としての基本
的な二つの調整項目が実質的に制御できる。しかし、一
方で、ガウシアンビーム共振器が、数波長以上の開口寸
法を具備することによる応用上の制限があり、更に高Ｑ
値の共振器としての基本的性質があるので、広い周波数
帯域を用いる無線通信装置や、多周波数の共用等の利用
目的には適していない。また、平面回路との積層化等に
適しているが、一方を球面鏡とする平凸レンズ状共振器
の製造コストが割高になる問題があり、低コスト化の面
での新しい解決策が必要である。In the configuration disclosed in FIG. 18, since the reflectivities of the partially transmitting reflecting mirror surface 601 and the conductor reflecting mirror surface 602, that is, the coupling strength with the space and the coupling strength with the negative resistance amplifier circuit can be set independently, Two basic adjustment items as an oscillator can be substantially controlled, including phase adjustment by a combination of the region 603 and the waveguide 61. However, on the other hand, the Gaussian beam resonator has an application limitation due to having an aperture size of several wavelengths or more, and further high Q
Because of its basic properties as a value resonator, it is not suitable for wireless communication devices that use a wide frequency band or for applications such as sharing multiple frequencies. Although it is suitable for lamination with a planar circuit, etc., there is a problem that the manufacturing cost of a plano-convex lenticular resonator having one spherical mirror is relatively expensive, and a new solution in terms of cost reduction is required. .
【００２０】これに対し、平面の回路とアンテナを一体
化して装置を構成する試みがある。図１９は、負性抵抗
増幅回路とアンテナ素子を同一平面に近接して配置する
公知の発振装置の構成を示す説明図である。図１９にお
いて、高周波トランジスタ６９は、ストリップラインか
ら成る共振器６０と一体化され、負性抵抗増幅回路とし
て発振器が構成され、且つ直流バイアスライン６６から
供給される直流電力は高周波電力に変換され、一体化し
て接続されアンテナとして機能する方形導体パッチ６５
を通じて空間へ放射される。On the other hand, there is an attempt to construct a device by integrating a planar circuit and an antenna. FIG. 19 is an explanatory diagram showing a configuration of a known oscillation device in which a negative resistance amplifier circuit and an antenna element are arranged close to the same plane. In FIG. 19, a high frequency transistor 69 is integrated with a resonator 60 formed of a strip line, an oscillator is configured as a negative resistance amplifier circuit, and DC power supplied from a DC bias line 66 is converted into high frequency power. Square conductor patch 65 integrally connected and functioning as an antenna
Is radiated to space through
【００２１】この場合に、発振はスタブ６８やストリッ
プライン共振器６０、直流バイアスライン６６及び方形
導体パッチ６５アンテナの相互間に避けがたい結合があ
るので、インピーダンス整合や共振周波数、配線位置等
の僅かな違いで複雑に影響し合い、発振スペクトル、発
振出力、及び放射パターン特性に敏感に影響するので、
現実的に扱い難い構成である。In this case, since there is an unavoidable coupling between the stub 68, the stripline resonator 60, the DC bias line 66, and the rectangular conductor patch 65 antenna, oscillation such as impedance matching, resonance frequency, wiring position, etc. Since it affects each other complicatedly with slight differences and sensitively affects the oscillation spectrum, oscillation output, and radiation pattern characteristics,
This is a configuration that is practically difficult to handle.
【００２２】上記の様な発振回路とアンテナの集積化の
試みと並行して、上記構成における困難を克服する試み
として平面共振器構造を発振の為の共振器として用いる
と同時に、電磁波放射器として利用する方法が研究され
てきた。図２０にR.A. York等によって開示された平面
導体パッチが発振用共振器と電磁波の出力部分を兼ねる
公知の放射型発振装置の一構成例を示す(R.A. York and
R.C. Compton, "Quasi-Optical Power Combining Usin
g Mutually Synchronized Oscillator Arrays", IEEE T
rans. Microwave Theory Tech.,Vol.MTT-39,pp1000-100
9,1991)。In parallel with the attempt to integrate the oscillation circuit and the antenna as described above, in order to overcome the difficulties in the above configuration, the planar resonator structure is used as a resonator for oscillation, and at the same time, as an electromagnetic wave radiator. The methods used have been studied. FIG. 20 shows a configuration example of a known radiation type oscillation device in which a planar conductor patch disclosed by RA York et al. Also serves as an oscillation resonator and an output portion of an electromagnetic wave (RA York and
RC Compton, "Quasi-Optical Power Combining Usin
g Mutually Synchronized Oscillator Arrays ", IEEE T
rans.Microwave Theory Tech., Vol.MTT-39, pp1000-100
9,1991).
【００２３】幅の広い二つの低インピーダンスマイクロ
ストリップ線路となる方形導体パッチ６５を狭いギャッ
プ７０を隔てて配置し、ソース接地の電界効果型（ＦＥ
Ｔ）の高周波トランジスタ６９のドレインとゲートを、
それぞれの低インピーダンスマイクロストリップ線路に
接続し、この二つの低インピーダンスマイクロストリッ
プ線路に、それぞれ直流バイアスライン６６により直接
バイアスを取り、且つこの狭いギャップ７０による容量
的な結合を増幅器の正帰還回路とすることにより、高周
波的に共振器側から見て負性抵抗増幅回路となるように
し、且つ簡易な平面放射型発振装置を構成する方法とし
て開示されている。A rectangular conductor patch 65, which becomes two wide low-impedance microstrip lines, is arranged with a narrow gap 70 therebetween.
T) the drain and gate of the high-frequency transistor 69
Connected to each low impedance microstrip line, the two low impedance microstrip lines are directly biased by the DC bias line 66, respectively, and the capacitive coupling by the narrow gap 70 is used as a positive feedback circuit of the amplifier. Thus, a method is disclosed in which a negative resistance amplifier circuit is viewed from the resonator side at a high frequency and a simple planar emission type oscillation device is configured.
【００２４】発振が成長し共振器内に電磁波エネルギー
が蓄積されるためには、ＦＥＴ（電界効果トランジス
タ）のゲート側への帰還が適当な位相と比率で行われる
必要がある。帰還位相と振幅の組み合わせが共振器から
みて、負性抵抗増幅回路の条件になる時に、発振が可能
となり、共振器に高周波電磁界が蓄積される。In order for the oscillation to grow and the electromagnetic wave energy to be stored in the resonator, it is necessary that the feedback to the gate side of the FET (field effect transistor) be performed at an appropriate phase and ratio. When the combination of the feedback phase and the amplitude is viewed from the resonator and the condition of the negative resistance amplifying circuit is satisfied, oscillation becomes possible, and a high-frequency electromagnetic field is accumulated in the resonator.
【００２５】その際に、共振器から見て負性抵抗回路に
見えるためには、トランジスタ増幅器への正帰還条件が
満足される必要があり、更に共振器と空間との間の弱い
結合が確保されることが基本条件として要求される。At this time, in order to make the circuit look like a negative resistance circuit when viewed from the resonator, it is necessary to satisfy a positive feedback condition to the transistor amplifier, and further, to secure a weak coupling between the resonator and the space. Is required as a basic condition.
【００２６】従って、図２０に開示のアンテナ機能を兼
ねる共振器を用いた放射型発振装置の場合に、高周波ト
ランジスタ６９への正帰還条件についてキャパシタンス
により調整できるように、工夫されている。しかし、二
つの方形導体パッチ６５の間の狭いギャップ７０の幅を
変化させ、キャパシタンスを調整する図２０に開示の方
式は、それ以外の調整機能が無く、放射型発振装置とし
て調整の自由度に欠ける。従って、アンテナ機能を兼ね
る共振器を用いた放射型発振装置として、最適な発振状
態を実現する手法は開示されていなかった。Therefore, in the case of the radiation type oscillation device using the resonator also having the antenna function disclosed in FIG. 20, it is devised so that the positive feedback condition to the high frequency transistor 69 can be adjusted by the capacitance. However, the method disclosed in FIG. 20 for adjusting the capacitance by changing the width of the narrow gap 70 between the two rectangular conductor patches 65 has no other adjustment function, and has a high degree of freedom in adjustment as a radiating oscillator. Chip. Therefore, as a radiation type oscillation device using a resonator which also has an antenna function, a method for realizing an optimum oscillation state has not been disclosed.
【００２７】これに対し、図２１は、本願の発明者等に
よって開示されている「マイクロ波ミリ波放射型発振装
置」（特願平９−２２０５７９号）の平面構成を示す説
明図であり、当該開示の技術によって、平面構成の共振
器を用いた放射型発振装置の、放射機能を兼ねる平面共
振器と空間との結合強度と、該平面共振器と増幅素子と
の結合関係を最適化し、高能率な放射型発振装置が実現
できる様になった。On the other hand, FIG. 21 is an explanatory diagram showing a plan configuration of a “microwave / millimeter-wave radiation type oscillation device” (Japanese Patent Application No. 9-220579) disclosed by the inventors of the present application. According to the technology of the present disclosure, a radiation type oscillation device using a resonator having a planar configuration, the coupling strength between a planar resonator also serving as a radiation function and space, and the coupling relationship between the planar resonator and an amplification element are optimized, A highly efficient radiation type oscillation device can be realized.
【００２８】図２１に開示の構成では、一対の扇状導体
パッチ７１は、その尖鋭部７２が互いに近接し、且つ円
弧部が互いに相対する様に配置され、該一対の扇状導体
パッチ７１の中央部にゲート及びドレインを当該一対の
扇状導体パッチの異なる一方にそれぞれ接続し、ソース
を接地した電界効果型の高周波トランジスタ６９と、当
該各一対の扇状導体パッチ７１と平行に広がる導体平面
とからなり、上記一対の扇状導体パッチ７１面と平行に
広がる上記導体平面との間隔は波長の１／１５〜１／５
倍の間であり、上記扇状導体パッチ７１の半径は、発振
波長の約１／４の長さであり、扇状導体パッチは直流バ
イアスライン６６により、それぞれソースを接地電位と
する別々の直流電源に接続される。In the configuration disclosed in FIG. 21, a pair of fan-shaped conductor patches 71 are arranged such that their sharp portions 72 are close to each other and their arc portions are opposed to each other. A field-effect type high-frequency transistor 69 having a gate and a drain connected to different ones of the pair of fan-shaped conductor patches and a source grounded, and a conductor plane extending in parallel with the pair of fan-shaped conductor patches 71, The distance between the pair of fan-shaped conductor patches 71 and the conductor plane extending in parallel is 1/15 to 1/5 of the wavelength.
The radius of the fan-shaped conductor patch 71 is about ４ of the oscillation wavelength, and the fan-shaped conductor patch is connected to a separate DC power supply whose source is ground potential by the DC bias line 66. Connected.
【００２９】図２１に開示の技術によれば、一対の扇状
導体パッチ７１と平行に広がる上記導体平面との間隔の
調整と、及び扇状導体パッチ７１の広がり角θの調整の
自由度がある点において、他の従来技術に比較して優れ
ており、図１８に開示のファブリペロー型の共振器を用
いた発振用共振器が電磁波の出力部分を兼ねる公知の放
射型発振装置で実現しているのと同様に、平面導体パッ
チが発振用共振器と電磁波の出力部分を兼ねる放射型発
振装置として作用し、発振条件の最適化に必要な制御可
能なパラメータを２つ確保し、高い効率で高周波発振出
力を空間に取り出すこと、更にそれらを同一平面にアレ
ー状に配置し、空間的な相互位相同期による高能率な電
力合成の実現に適した平面放射型発振装置の基本構成が
開示されている。According to the technique disclosed in FIG. 21, there is a degree of freedom in adjusting the interval between the pair of fan-shaped conductor patches 71 and the above-mentioned conductor plane extending in parallel and adjusting the spread angle θ of the fan-shaped conductor patches 71. In this case, the oscillation resonator using the Fabry-Perot type resonator disclosed in FIG. 18 is realized by a known radiation type oscillation device also serving as an output part of an electromagnetic wave. In the same way as described above, the planar conductor patch acts as a radiating oscillator that also functions as an oscillation resonator and an output part of electromagnetic waves, securing two controllable parameters necessary for optimizing oscillation conditions, and achieving high efficiency and high frequency. Disclosed is a basic configuration of a planar radiation type oscillation device that takes out oscillation outputs into a space, further arranges them in an array on the same plane, and is suitable for realizing highly efficient power combining by spatial mutual phase synchronization. .
【００３０】しかし、上記「平面放射型発振装置」（特
願平１１−５９０７０号）に依れば、隣接配置の放射型
発振装置の相互結合効果が高く、効率の良い空間電力合
成に適している反面、異なる周波数もしくは、異なる指
向ビームにより複数の通信回線を並列に確保する場合に
は隣接する放射型発振装置間の相互干渉が生じ易く、適
していない問題があった。However, according to the above-mentioned "planar radiation type oscillation device" (Japanese Patent Application No. 11-59070), the mutual effect of adjacently arranged radiation type oscillation devices is high, which is suitable for efficient space power synthesis. On the other hand, when a plurality of communication lines are secured in parallel using different frequencies or different directional beams, mutual interference between adjacent radiating oscillators is likely to occur, which is not suitable.
【００３１】これに対し、放射型発振装置を同一平面に
複数配置した場合の相互干渉を防ぎ、独立した放射型発
振装置の平面的配置を実現し易い構成として、接地導体
面を共有するスロット型共振器の構成が考えられる。On the other hand, a slot type in which a ground conductor is shared is provided as a configuration for preventing mutual interference when a plurality of radiation type oscillation devices are arranged on the same plane and for easily realizing a planar arrangement of independent radiation type oscillation devices. A resonator configuration is conceivable.
【００３２】図２２は、公知の放射型発振装置であって
導体平面上に形成されたリングスロット型アンテナを発
振用の共振器として用いた放射型発振装置（Electronic
s Letters Vol.29, No.6, pp.521-522, 1993）の構成を
示す説明図である。導体平面８０上に、導体面８１及び
８２の間にリングスロット８３を形成し、電界効果型の
高周波トランジスタ６９のゲート６９ａ及びドレイン６
９ｂをそれぞれ導体面８１及び８２に接合し、ソース６
９ｃを導体平面８０に接合し接地とし、該導体面８１及
び８２は、狭い空隙８４によって直流的に分離され、前
記接地を共有する直流電源に接続される。当該公知の放
射型発振装置は、発振用のリングスロット８３共振器の
周辺が導体平面８０で囲まれた構成であり、同一平面上
に当該リングスロット８３をアンテナとして放射型発振
装置を配置した場合にも、該放射型発振装置間の相互干
渉を分離し易い特徴がある。FIG. 22 shows a known radiation type oscillating device which uses a ring slot type antenna formed on a conductor plane as a resonator for oscillation.
s Letters Vol. 29, No. 6, pp. 521-522, 1993). A ring slot 83 is formed between the conductor surfaces 81 and 82 on the conductor plane 80, and the gate 69a and the drain 6 of the field-effect type high-frequency transistor 69 are formed.
9b to the conductor surfaces 81 and 82, respectively,
9c is joined to a conductor plane 80 to be grounded, and the conductor faces 81 and 82 are separated by a narrow gap 84 in a DC manner and are connected to a DC power supply sharing the ground. The known radiation type oscillation device has a configuration in which the periphery of an oscillation ring slot 83 resonator is surrounded by a conductor plane 80, and the radiation type oscillation device is arranged on the same plane using the ring slot 83 as an antenna. Also, there is a feature that mutual interference between the radiation type oscillation devices can be easily separated.
【００３３】[0033]
【発明が解決しようとする課題】しかしながら、上記に
開示のリングスロット８３のアンテナを発振用の共振器
として用いた放射型発振装置の共振周波数は、リングス
ロット８３の長さπＬで決まり、該リングスロット８３
の幅Ｇが、特性インピーダンスを調整する唯一の可変パ
ラメータであり、これは、空間を出力とする放射型発振
装置の発振効率を最適化するための条件として必要な、
共振器と空間との結合係数、増幅素子と共振器との結合
係数のパラメータ調整する自由度が無く、原理的に発振
の最適化が不可能であった。この問題は、円形状のリン
グスロット８３を方形リングスロットやその他の形状に
変更しても同じであり、放射型発振装置として最適化す
るための調整パラメータの自由度が不足しており、放射
型発振装置として最適な発振状態を実現するのに必要な
手法は開示されていなかった。However, the resonance frequency of the radiating type oscillating device using the antenna of the ring slot 83 disclosed above as the resonator for oscillation is determined by the length πL of the ring slot 83, and Slot 83
Is the only variable parameter that adjusts the characteristic impedance, which is necessary as a condition for optimizing the oscillation efficiency of a radiation type oscillation device that outputs space.
There is no flexibility in adjusting the parameters of the coupling coefficient between the resonator and the space and the coupling coefficient between the amplifying element and the resonator, so that it was impossible in principle to optimize the oscillation. This problem is the same even when the circular ring slot 83 is changed to a square ring slot or another shape, and the degree of freedom of adjustment parameters for optimizing the radiation type oscillation device is insufficient. A technique necessary for realizing an optimum oscillation state as an oscillation device has not been disclosed.
【００３４】放射型発振装置を同一平面上に複数配置
し、異なる周波数により複数の独立した通信回線を構成
する場合や、多チャンネンル計測装置システムを構成す
るためには、隣接する放射型発振装置間の相互干渉が分
離し易く、高能率の発振特性が得られる新しい構成の平
面構造放射型発振装置の開発が必要となっていた。In order to arrange a plurality of radiation type oscillation devices on the same plane and to configure a plurality of independent communication lines at different frequencies, or to configure a multi-channel measurement device system, it is necessary to set a plurality of radiation type oscillation devices between adjacent radiation type oscillation devices. Therefore, it is necessary to develop a planar-structure radiation type oscillation device having a new configuration that can easily separate mutual interference and obtain high-efficiency oscillation characteristics.
【００３５】本発明は、上記の問題点を解決するために
行ったもので、放射型発振装置の発振効率の最適化の条
件として必要な、共振器と空間との結合係数や、増幅素
子と共振器との結合係数のパラメータを調整する自由度
を持つ放射型発振装置の構成を実現し、同一平面上に複
数の該放射型発振装置を隣接して配置した場合にも該放
射型発振装置間の相互干渉を分離し易く、独立した通信
周波数チャンネルの利用や、独立した位相制御等を可能
とする効率の良い平面構造の放射型発振装置を提供する
ことを目的とする。The present invention has been made in order to solve the above-mentioned problems, and it is necessary to optimize the oscillation efficiency of a radiation type oscillation device. A radiating oscillator having a degree of freedom to adjust a parameter of a coupling coefficient with a resonator is realized, and even when a plurality of the radiating oscillators are arranged adjacent to each other on the same plane, It is an object of the present invention to provide a radiation type oscillation device having a planar structure with high efficiency, which can easily separate mutual interference between them and can use independent communication frequency channels, independent phase control and the like.
【００３６】[0036]
【課題を解決するための手段】上記目的を達成するため
に、請求項１に記載の発明は、誘電体基板上に並列に配
置した一対の導体パッチと、上記誘電体基板上に各導体
パッチとは空隙を保って配置した接地導体面と、上記導
体パッチの各々と接地導体面とにその端子を接続して配
置した高周波増幅素子と、上記導体パッチの各々に接続
した直流電源と、を備え、上記導体パッチの各々と接地
導体面とでそれぞれ共振器を構成し、その共振器の各々
に直流電源からの電力を高周波増幅素子を介して入力
し、マイクロ波ミリ波帯の高周波発振出力を空間に取り
出し、上記導体パッチ間の距離は、発振波長の１／９０
〜１／１５とする、ことを特徴としている。In order to achieve the above object, according to the present invention, a pair of conductor patches arranged in parallel on a dielectric substrate and a pair of conductor patches arranged on the dielectric substrate are provided. Is a ground conductor surface arranged with an air gap, a high-frequency amplification element arranged by connecting its terminals to each of the conductor patches and the ground conductor surface, and a DC power supply connected to each of the conductor patches, A resonator is constituted by each of the conductor patches and the ground conductor surface. Power from a DC power supply is input to each of the resonators via a high-frequency amplification element, and a high-frequency oscillation output of a microwave millimeter wave band is provided. was <br/> Eject the space, the distance between the conductor patches, the oscillation wavelength 1/90
１／1/15 .
【００３７】また、請求項２に記載の発明は、上記した
請求項１に記載の発明の構成に加えて、上記共振器の各
々は、導体パッチの幅および長さ、導体パッチ間の距
離、並びに導体パッチと接地導体面との空隙幅をパラメ
ータとしてその高周波発振出力が制御される、ことを特
徴としている。According to a second aspect of the present invention, in addition to the configuration of the first aspect, each of the resonators includes a width and a length of the conductor patch, a distance between the conductor patches, In addition, the high-frequency oscillation output is controlled using the gap width between the conductor patch and the ground conductor surface as a parameter.
【００３８】請求項３に記載の発明は、上記した請求項
１に記載の発明の構成に加えて、上記導体パッチの長さ
を、発振波長の２／５〜３／５とする、ことを特徴とし
ている。According to a third aspect of the present invention, in addition to the configuration of the first aspect of the present invention, the length of the conductor patch is set to 2/5 to 3/5 of the oscillation wavelength. Features.
【００３９】請求項４に記載の発明は、上記した請求項
１に記載の発明の構成に加えて、上記誘電体基板上の導
体パッチおよび接地導体面から下方で発振波長の１／４
の距離に、平行に導体平面を配置した、ことを特徴とし
ている。According to a fourth aspect of the present invention, in addition to the configuration of the first aspect of the present invention, one-fourth of the oscillation wavelength below the conductor patch and the ground conductor surface on the dielectric substrate is provided.
The conductor planes are arranged in parallel at a distance of.
【００４０】また、請求項５に記載の発明は、上記した
請求項１に記載の発明の構成に加えて、上記誘電体基板
上の導体パッチおよび接地導体面から下方で発振波長の
１／４の距離に、集束性の反射鏡面を配置した、ことを
特徴としている。According to a fifth aspect of the present invention, in addition to the configuration of the first aspect of the present invention, a quarter of the oscillation wavelength below the conductor patch and the ground conductor surface on the dielectric substrate is provided. , A focusing mirror surface is arranged at a distance of.
【００４１】また、請求項６に記載の発明は、上記した
請求項１に記載の発明の構成に加えて、上記誘電体基板
上の導体パッチおよび接地導体面から下方で発振波長の
１／３０〜１／１０の距離に平行に導体平面を配置し
た、ことを特徴としている。According to a sixth aspect of the present invention, in addition to the configuration of the first aspect of the present invention, 1/30 of the oscillation wavelength below the conductor patch on the dielectric substrate and the ground conductor surface. It is characterized in that conductor planes are arranged in parallel at a distance of up to 1/10.
【００４２】さらに、請求項７に記載の発明は、上記し
た請求項１に記載の発明の構成に加えて、上記高周波増
幅素子は、電界効果型高周波トランジスタであって、ゲ
ートは一方の導体パッチに、ドレインは他方の導体パッ
チに、またソースは接地導体面にそれぞれ接続し、直流
電源は少なくともドレインを接続した導体パッチに接続
する、ことを特徴としている。According to a seventh aspect of the present invention, in addition to the configuration of the first aspect, the high frequency amplifying element is a field effect type high frequency transistor, and the gate is one of the conductor patches. The drain is connected to the other conductor patch, the source is connected to the ground conductor surface, and the DC power supply is connected to at least the conductor patch to which the drain is connected.
【００４３】請求項８に記載の発明は、上記した請求項
１に記載の発明の構成に加えて、上記高周波増幅素子
は、接合型高周波トランジスタであって、ベースは一方
の導体パッチに、コレクタは他方の導体パッチに、また
エミッタは接地導体面にそれぞれ接続し、直流電源は少
なくともコレクタを接続した導体パッチに接続する、こ
とを特徴としている。According to an eighth aspect of the present invention, in addition to the configuration of the first aspect of the present invention, the high frequency amplifying element is a junction type high frequency transistor, and has a base connected to one of the conductor patches and a collector connected to the collector. Is connected to the other conductor patch, the emitter is connected to the ground conductor surface, and the DC power supply is connected to at least the conductor patch to which the collector is connected.
【００４４】また、請求項９に記載の発明は、上記した
請求項１に記載の発明の構成に加えて、上記誘電体基板
は、高周波誘電損失の小さい、高純度シリコン、石英、
サファイア、アルミナ、ＰＴＦＥ、ポリエチレン等の材
料から成る、ことを特徴としている。According to a ninth aspect of the present invention, in addition to the configuration of the first aspect of the present invention, the dielectric substrate is made of high-purity silicon, quartz having a small high-frequency dielectric loss.
It is made of a material such as sapphire, alumina, PTFE, or polyethylene.
【００４５】[0045]
【発明の実施の形態】以下にこの発明の実施の形態を図
面に基づいて詳細に説明する。先ず第１の実施形態を図
１、図２を用いて説明する。Embodiments of the present invention will be described below in detail with reference to the drawings. First, a first embodiment will be described with reference to FIGS.
【００４６】図１は本発明の平面構造放射型発振装置の
第１の構成例を示す斜視図、図２はその要部を示す平面
図、図３は図２のＩ−Ｉ線断面図である。これらの図に
おいて、この発明の平面構造放射型発振装置１００は、
誘電体基板１０上に並列に配置した一対の矩形状の導体
パッチ１ａ，１ｂと、誘電体基板１０上に各導体パッチ
１ａ，１ｂとは空隙を保って配置した接地導体面３と、
導体パッチ１ａ，１ｂの各々と接地導体面３とにその端
子７，８，９を接続して配置した高周波増幅素子４と、
導体パッチ１ａ，１ｂの各々に接続した直流電源６ａ，
６ｂと、を備えている。ここで、高周波増幅素子４は、
例えば電界効果型の高周波トランジスタであって、ゲー
ト８は一方の導体パッチ１ａに、ドレイン７は他方の導
体パッチ１ｂに、またソース９，９は接地導体面３にそ
れぞれ接続し、直流電源６ａ，６ｂはそれぞれ直流バイ
アスライン１４により低域フィルタ５ａ，５ｂを介して
導体パッチ１ａ，１ｂに接続されている。FIG. 1 is a perspective view showing a first example of the configuration of a planar structure type oscillating device according to the present invention, FIG. 2 is a plan view showing a main part thereof, and FIG. 3 is a sectional view taken along line II of FIG. is there. In these figures, the planar structure emission type oscillation device 100 of the present invention
A pair of rectangular conductor patches 1a and 1b arranged in parallel on a dielectric substrate 10, and a ground conductor surface 3 arranged on the dielectric substrate 10 while keeping a gap between the conductor patches 1a and 1b;
A high frequency amplifying element 4 having terminals 7, 8, 9 connected to and arranged on each of the conductor patches 1a, 1b and the ground conductor surface 3,
DC power supply 6a, connected to each of conductor patches 1a, 1b,
6b. Here, the high frequency amplifying element 4
For example, in a field effect type high-frequency transistor, the gate 8 is connected to one conductor patch 1a, the drain 7 is connected to the other conductor patch 1b, and the sources 9, 9 are connected to the ground conductor surface 3, respectively. 6b are connected to the conductor patches 1a and 1b by DC bias lines 14 via low-pass filters 5a and 5b, respectively.
【００４７】そして、導体パッチ１ａと、この導体パッ
チ１ａをその周囲の空隙領域２を介して囲む接地導体面
３とで共振器Ａを構成し、また、導体パッチ１ｂと、こ
の導体パッチ１ｂをその周囲の空隙領域２ｂを介して囲
む接地導体面３とで共振器Ｂを構成し、その共振器Ａ，
Ｂの各々に直流電源６ａ，６ｂからの電力を、低域フィ
ルタ５ａ，５ｂおよび高周波トランジスタ４を介して入
力し、マイクロ波ミリ波帯の高周波発振出力を空間に取
り出すようになっている。A resonator A is constituted by the conductor patch 1a and the ground conductor surface 3 surrounding the conductor patch 1a via a gap region 2 surrounding the conductor patch 1a. The conductor patch 1b and the conductor patch 1b Resonator B is constituted by ground conductor surface 3 surrounding via surrounding void region 2b.
The power from the DC power supplies 6a and 6b is input to each of B through the low-pass filters 5a and 5b and the high-frequency transistor 4, and the high-frequency oscillation output of the microwave millimeter wave band is taken out to space.
【００４８】なお、誘電体基板１０は高周波誘電損失の
小さい、高純度シリコン、石英、サファイア、アルミ
ナ、ＰＴＦＥ、ポリエチレン等の材料で形成されてい
る。また、導体パッチ１ａ，１ｂ、接地導体面３の導体
表面での高周波電流損失の影響を最小限にするために該
導体表面は高品質な高導電性膜である必要があり、それ
らが形成される誘電体基板の表面は、滑らかな面である
ことが重要である。The dielectric substrate 10 is made of a material having a small high-frequency dielectric loss, such as high-purity silicon, quartz, sapphire, alumina, PTFE, or polyethylene. Further, in order to minimize the effect of high-frequency current loss on the conductor surfaces of the conductor patches 1a and 1b and the ground conductor surface 3, the conductor surface needs to be a high-quality and highly conductive film, and these are formed. It is important that the surface of the dielectric substrate be smooth.
【００４９】上記構成の平面構造放射型発振装置１００
において、ゲート８に接続した導体パッチ１ａと接地導
体面３との間（すなわち共振器Ａ）に発生した雑音信号
は増幅され、ドレイン７に接続した導体パッチ１ｂと接
地導体面３との間（すなわち共振器Ｂ）に高周波電界を
誘起し、共振器Ａ，Ｂの共振周波数に一致する成分は、
効率よく振動が保持され、導体パッチ１ａ，１ｂの長さ
方向に磁界を発生させ、一部は空間へ放射される。The planar structure radiation type oscillation device 100 having the above configuration
The noise signal generated between the conductor patch 1a connected to the gate 8 and the ground conductor surface 3 (that is, the resonator A) is amplified, and the noise signal is amplified between the conductor patch 1b connected to the drain 7 and the ground conductor surface 3 ( That is, a component that induces a high-frequency electric field in the resonator B) and matches the resonance frequency of the resonators A and B is:
Vibration is efficiently held, a magnetic field is generated in the length direction of the conductor patches 1a and 1b, and a part is radiated to the space.
【００５０】このとき、導体パッチ１ａ，１ｂ間の距離
Ｄ１（＝２×Ｇ（空隙領域２の幅）＋Ｄ（導体パッチ１
ａ，１ｂの間の接地導体面３の幅）を、発振波長の１／
９０から１／１５に設定すると、導体パッチ１ａ，１ｂ
は相互に十分近接した配置となり、したがって、ゲート
８側へ同位相の電磁界が誘起されて正帰還条件が満足さ
れ、発振が成長し、大振幅動作の状態で、空間への電磁
界の放射を含めた損失の和が、高周波トランジスタ４に
よる高周波電力の供給と釣り合った状態で定常状態に達
する。At this time, the distance D1 between the conductor patches 1a and 1b (= 2 × G (the width of the void area 2) + D (the conductor patch 1
a, 1b) is set to 1 / １ ／ of the oscillation wavelength.
When the distance is set to 1/15 from 90, the conductor patches 1a, 1b
Are arranged sufficiently close to each other, so that an in-phase electromagnetic field is induced on the gate 8 side, the positive feedback condition is satisfied, oscillation grows, and the electromagnetic field is radiated to space in a state of large amplitude operation. Reaches a steady state in a state in which the sum of the losses including the above is balanced with the supply of the high frequency power by the high frequency transistor 4.
【００５１】共振器Ａ，Ｂに蓄積された電磁界エネルギ
ーは、定常状態において一定の割合で空間に放射され、
ほぼ対称な放射パターンを持つ平面構造放射型発振装置
となる。The electromagnetic field energy stored in the resonators A and B is radiated to space at a constant rate in a steady state.
A planar structure radiation type oscillation device having a substantially symmetric radiation pattern is obtained.
【００５２】また、導体パッチ１ａ、１ｂ及び接地導体
面３と空隙領域２とで形成される共振器での実効波長
は、導体パッチ１ａ、１ｂの幅Ｗ、空隙領域２の幅Ｇ及
び接地導体面３と平行に配置される導体平面１１との間
隔等に依存し、誘電体基板の比誘電率の効果を含め、
０．８〜１．２倍の程度の範囲でずれを生じることか
ら、導体パッチ１ａ、１ｂの長さＬを、上記のパラメー
タの条件にあわせて発振波長の２／５〜３／５の間で選
ぶことで発振周波数を設定することができる。さらに、
上記のパラメータの条件の選択により発振のための共振
器のＱ値を調整できることから、相対的に高いスペクト
ル純度の発振が得られる状態からスペクトルの純度は多
少劣るが、広い同期可能周波数帯域特性を持つ発振状態
を選択できるようになる。一般には、共振器Ａ，Ｂは、
空間と整合が採れた平面アンテナとはならず、空間に対
して弱く結合する平面共振器となる。The effective wavelength in the resonator formed by the conductor patches 1a and 1b and the ground conductor surface 3 and the gap region 2 is the width W of the conductor patches 1a and 1b, the width G of the gap region 2 and the ground conductor. It depends on the distance between the plane 3 and the conductor plane 11 arranged in parallel, and includes the effect of the relative permittivity of the dielectric substrate.
Since the displacement occurs in the range of about 0.8 to 1.2 times, the length L of the conductor patches 1a and 1b is set to 2/5 to 3/5 of the oscillation wavelength in accordance with the conditions of the above parameters. The oscillation frequency can be set by selecting. further,
Since the Q value of the resonator for oscillation can be adjusted by selecting the conditions of the above parameters, the purity of the spectrum is somewhat inferior from the state where the oscillation of relatively high spectral purity is obtained, but the wide synchronizable frequency band characteristic is not improved. You can select the oscillation state you have. Generally, resonators A and B are
The plane antenna does not become a plane antenna matched with the space, but becomes a plane resonator weakly coupled to the space.
【００５３】このように、本発明の平面構造放射型発振
装置１００の構成によれば、導体パッチ１ａ，１ｂの幅
Ｗおよび長さＬ、導体パッチ１ａ，１ｂ間の距離Ｄ１、
および導体パッチ１ａ，１ｂと接地導体面３との空隙幅
Ｇをパラメータとすることで、共振器Ａ，Ｂの空間との
結合、共振器Ａ，Ｂ相互間の空間結合、及び高周波トラ
ンジスタ４と各共振器Ａ，Ｂとの結合の各度合いを広い
範囲で選択調整することが可能となる。As described above, according to the configuration of the planar structure radiation type oscillation device 100 of the present invention, the width W and the length L of the conductor patches 1a and 1b, the distance D1 between the conductor patches 1a and 1b,
By using the gap width G between the conductor patches 1a and 1b and the ground conductor surface 3 as a parameter, coupling with the space of the resonators A and B, spatial coupling between the resonators A and B, and connection with the high-frequency transistor 4 Each degree of coupling with each of the resonators A and B can be selectively adjusted in a wide range.
【００５４】これにより、直流バイアスライン１４によ
り低域フィルター５ａ，５ｂを介して高周波トランジス
タ４に接続された直流電源６ａ，６ｂからのＤＣ電力を
高い効率でマイクロ波ミリ波帯の高周波発振出力（ＲＦ
電力）として空間に取り出すことができる。すなわち、
平面構造放射型発振装置１００の発振出力の最適化が可
能となる。As a result, the DC power from the DC power supplies 6a and 6b connected to the high-frequency transistor 4 via the low-pass filters 5a and 5b via the DC bias line 14 can be used to efficiently convert the high-frequency oscillation output of the microwave millimeter wave band ( RF
Power) can be taken out into space. That is,
It is possible to optimize the oscillation output of the planar structure emission type oscillation device 100.
【００５５】また、本発明による一対の共振器Ａ，Ｂ
は、導体パッチ１ａ，１ｂと、その導体パッチ１ａ，１
ｂの周囲に空隙領域２を介して拡がる接地導体面３とで
形成されることから、この一つの共振器Ａ，Ｂからなる
平面構造放射型発振装置１００を同一平面上に複数配置
した場合でも装置間の相互干渉を分離することができ、
したがって、互いに異なる周波数を持つ複数の独立した
通信回線を構成できすることができる。また、異なる指
向ビームにより複数の通信回線を並列に確保することが
でき、さらにアレー構成によるビーム形成へ応用するこ
とができる。A pair of resonators A and B according to the present invention
Are the conductor patches 1a, 1b and the conductor patches 1a, 1b.
b, and is formed by the ground conductor surface 3 extending through the gap region 2, so that even when a plurality of the planar structure radiating type oscillation devices 100 including the resonators A and B are arranged on the same plane, Mutual interference between devices can be separated,
Therefore, it is possible to configure a plurality of independent communication lines having different frequencies. Further, a plurality of communication lines can be secured in parallel by using different directional beams, and the present invention can be applied to beam forming by an array configuration.
【００５６】図４は本発明の平面構造放射型発振装置の
第２の構成例を示す断面図である。この第２の構成例で
は、図に示すように、誘電体基板１０上の導体パッチ１
ａ，１ｂと接地導体面３との下方に、発振波長の１／４
の距離に平行な導体平面１１が配置されている。したが
って、上記した第１の構成例の場合と同様に、発振出力
の最適化等の効果を奏するとともに、さらに次のような
効果を発揮するにいたる。すなわち、導体パッチ１ａ，
１ｂ及び接地導体面３の両側にほぼ対称な放射パターン
で放射される電磁界の内、導体パッチ１ａ，１ｂ及び接
地導体面３の下方に放射される成分は、当該平行な導体
平面１１で反射され、導体平面１１での位相ずれを含め
一波長に相当する位相差で重畳されるため強め合い、単
一指向性の平面構造放射型発振装置とすることができ
る。FIG. 4 is a cross-sectional view showing a second example of the configuration of the planar structure emission type oscillation device according to the present invention. In the second configuration example, as shown in FIG.
a, 1b and 接地 of the oscillation wavelength below the ground conductor surface 3.
Conductor planes 11 are arranged in parallel to each other. Therefore, as in the case of the first configuration example described above, effects such as optimization of the oscillation output can be achieved, and further, the following effects can be achieved. That is, the conductor patches 1a,
Among the electromagnetic fields radiated in substantially symmetrical radiation patterns on both sides of the ground conductor surface 1b and the ground conductor surface 3, components radiated below the conductor patches 1a and 1b and the ground conductor surface 3 are reflected by the parallel conductor plane 11. Then, since they are superposed with a phase difference corresponding to one wavelength including a phase shift in the conductor plane 11, they are strengthened, and a monodirectional planar structure type oscillating device can be obtained.
【００５７】なお、第２の構成例および以下に説明する
各構成例において、誘電体基板１０の下方に導体平面１
１を設ける場合、その導体平面１１はここでは図示され
ていないが、低損失で表面が滑らかな誘電体基板上に設
けるものとする。また、誘電体基板１０と導体平面１１
との間には、さらに誘電体基板を介在させるようにして
もよいし、単に空気層として構成してもよい。空気層と
する場合は、装置外周に支持機構を設け、誘電体基板１
０と、導体平面１１が設けられている誘電体基板との双
方を支持するようにすればよい。In the second configuration example and each configuration example described below, the conductor plane 1 is located below the dielectric substrate 10.
When 1 is provided, the conductor plane 11 is not shown here, but is provided on a dielectric substrate having a low loss and a smooth surface. Further, the dielectric substrate 10 and the conductor plane 11
A dielectric substrate may be further interposed between them, or they may be simply configured as an air layer. When an air layer is used, a support mechanism is provided on the outer periphery of the device and the dielectric substrate
0 and the dielectric substrate provided with the conductor plane 11 may be supported.
【００５８】図５、図６および図７は第２の構成例にお
いて集束性の反射鏡面が配置される構成を示す図であ
る。図５では、凸レンズ状の誘電体１２と導体平面１１
の組み合わせにより、凹面反射鏡と等価な集束性の反射
鏡面を構成している。また、図６では、図５の場合のレ
ンズ状の誘電体１２に換えて、円柱状の誘電体１２１と
導体平面１１とを組み合わせた場合であり、この場合に
は、円柱状の誘電体１２１の径と厚さの組み合わせを適
当に選択することで、十分効果的な集束効果のある反射
鏡面を構成することができる。さらに、図７では、集束
効果のある凹面反射鏡１３そのものを用いた場合であ
る。FIGS. 5, 6, and 7 are views showing a configuration in which a converging reflecting mirror surface is arranged in the second configuration example. In FIG. 5, a dielectric lens 12 having a convex lens shape and a conductor plane 11 are shown.
Are combined to form a converging reflecting mirror surface equivalent to a concave reflecting mirror. FIG. 6 shows a case where a cylindrical dielectric 121 and a conductor plane 11 are combined in place of the lens dielectric 12 in FIG. 5, and in this case, the cylindrical dielectric 121 is used. By appropriately selecting a combination of the diameter and the thickness of the reflecting mirror, a reflecting mirror surface having a sufficiently effective focusing effect can be formed. FIG. 7 shows a case in which the concave reflecting mirror 13 itself having a focusing effect is used.
【００５９】このように、図５、図６および図７では、
導体パッチ１ａ，１ｂと接地導体面３との下方に、集束
効果のある反射鏡面を配置するようにしたので、導体パ
ッチ１ａ，１ｂ及び接地導体面３の両側にほぼ対称な放
射パターンで放射される電磁界の内、導体パッチ１ａ，
１ｂ及び接地導体面３の下方に放射される成分は、集束
性の導体反射鏡面（１２＋１１、１２１＋１１、１３）
で反射され、導体面での位相ずれを含め一波長に相当す
る位相差で重畳されるため強め合い、図４の場合と同様
に、単一指向性の平面構造放射型発振装置とすることが
できる。As described above, in FIGS. 5, 6 and 7,
Since a reflecting mirror surface having a focusing effect is arranged below the conductor patches 1a, 1b and the ground conductor surface 3, the radiation is radiated in a substantially symmetric radiation pattern on both sides of the conductor patches 1a, 1b and the ground conductor surface 3. Conductor patches 1a,
Components radiated below 1b and the ground conductor surface 3 are convergent conductor reflection mirror surfaces (12 + 11, 121 + 11, 13)
4 and are superposed with a phase difference corresponding to one wavelength including a phase shift on the conductor surface, so that they are strengthened. As in the case of FIG. it can.
【００６０】図８は本発明の平面構造放射型発振装置の
第３の構成例を示す断面図である。この第３の構成例で
は、導体パッチ１ａ，１ｂと接地導体面３との下方に、
発振波長の１／３０〜１／１０の間隔を保って平行な導
体平面１１が配置される。FIG. 8 is a sectional view showing a third configuration example of the planar structure type oscillating device of the present invention. In the third configuration example, below the conductor patches 1 a and 1 b and the ground conductor surface 3,
Parallel conductor planes 11 are arranged with an interval of 1/30 to 1/10 of the oscillation wavelength.
【００６１】このように、導体パッチ１ａ，１ｂと接地
導体面３との下方で、発振波長の１／３０〜１／１０の
距離に、平行に導体平面１１を配置したので、上記した
第１の構成例の場合と同様に、発振出力の最適化等の効
果を奏するとともに、さらに次のような効果を発揮する
にいたる。すなわち、上記した共振器Ａ，Ｂの各々は、
バックプレート付き共振器となり、共振器Ａ，Ｂのイン
ピーダンスを、導体平面１１が平行に配置されていない
場合と比較して低減することができるようになる。その
結果、平行に配置される導体平面１１が無い場合、及び
平行に配置される導体平面１１が発振波長の１／４の距
離に配置される場合に比べ、導体パッチ１ａ、１ｂの幅
Ｗに対する空隙領域２の幅Ｇを相対的に大きくとること
ができ、短波長のミリ波帯で微細化する加工寸法上の条
件を和らげる効果が得られる他、単一指向性が容易に実
現できる等の利点がある。As described above, the conductor plane 11 is arranged in parallel below the conductor patches 1a and 1b and the ground conductor surface 3 at a distance of 1/30 to 1/10 of the oscillation wavelength. As in the case of the configuration example, effects such as optimization of the oscillation output can be achieved, and the following effects can be further achieved. That is, each of the resonators A and B described above
The resonator with the back plate is provided, and the impedance of the resonators A and B can be reduced as compared with the case where the conductor planes 11 are not arranged in parallel. As a result, as compared with the case where there is no conductor plane 11 arranged in parallel and the case where the conductor plane 11 arranged in parallel is arranged at a distance of 1/4 of the oscillation wavelength, the width of the conductor patches 1a and 1b relative to the width W is larger. The width G of the gap region 2 can be made relatively large, and the effect of reducing the condition on the processing size to be miniaturized in the short wavelength millimeter wave band can be obtained, and unidirectionality can be easily realized. There are advantages.
【００６２】図９は本発明の平面構造放射型発振装置の
第４の構成例を示す説明図である。この第４の構成例で
は、導体パッチ１ａ，１ｂを矩形状ではなく半楕円状に
形成している。したがって、導体パッチ１ａ，１ｂと、
周囲の接地導体面３との間の空隙幅が一定でなく、外周
側で変化するようになっている。すなわち、導体パッチ
１ａ，１ｂが相対する領域にある接地導体面３との間で
の空隙幅Ｇ１は一定であるが、それ以外の領域にある接
地導体面３との間での空隙幅Ｇ２は変化している。FIG. 9 is an explanatory view showing a fourth configuration example of the planar structure emission type oscillation device according to the present invention. In the fourth configuration example, the conductor patches 1a and 1b are formed not in a rectangular shape but in a semi-elliptical shape. Therefore, the conductor patches 1a and 1b,
The gap width with the surrounding ground conductor surface 3 is not constant, but changes on the outer peripheral side. That is, the gap width G1 between the conductor patch 1a and the ground conductor surface 3 in the region opposed to the ground patch surface 3 is constant, but the gap width G2 between the conductor patch 1a and the ground conductor surface 3 in the other region is constant. Is changing.
【００６３】上記のように、導体パッチ１ａ，１ｂ間の
距離Ｄ１は、発振波長の１／９０〜１／１５として互い
に近接させる必要があることから、空隙幅Ｇ１は、発振
波長の１／１００〜１／２０の範囲であることが必要と
なる。一方、外周側の空隙幅Ｇ２は、発振波長の１／２
０〜１／４程度の相対的に大きな空隙とすることが可能
である。As described above, since the distance D1 between the conductor patches 1a and 1b needs to be close to each other as 1/90 to 1/15 of the oscillation wavelength, the gap width G1 is 1/100 of the oscillation wavelength. It needs to be in the range of 1/20. On the other hand, the gap width G2 on the outer peripheral side is １ ／ of the oscillation wavelength.
A relatively large gap of about 0 to 1/4 can be provided.
【００６４】このように、導体パッチ１ａ，１ｂを半楕
円状に形成するようにしたので、上記した第１の構成例
の場合と同様に、発振出力の最適化等の効果を奏すると
ともに、さらに次のような効果を発揮するにいたる。す
なわち、導体パッチ１ａ，１ｂ同士を近接させる必要が
ある領域での空隙幅Ｇ１は小さく設定でき、一方、近接
させる必要のない領域での空隙幅Ｇ２は変化を持たせる
ことができ、したがって、放射パターンの対称性を含め
た調整を、簡単にかつ有効に行えるようになる。As described above, since the conductor patches 1a and 1b are formed in a semi-elliptical shape, the effect of optimizing the oscillation output and the like can be obtained as in the case of the first configuration example, and furthermore, The following effects are achieved. That is, the gap width G1 in a region where the conductor patches 1a and 1b need to be close to each other can be set small, while the gap width G2 in a region where the conductor patches 1a and 1b do not need to be close to each other can be changed. The adjustment including the symmetry of the pattern can be easily and effectively performed.
【００６５】なお、導体パッチ１ａ，１ｂは半楕円状で
あるとして説明したが、相対する側の形状が直線であれ
ば、外周側は任意の形状をとるようにしてもよい。Although the conductor patches 1a and 1b have been described as having a semi-elliptical shape, the outer peripheral side may have any shape as long as the shape on the opposite side is straight.
【００６６】図１０は本発明の第５の構成例を示す斜視
図である。この第５の構成例が上記した第１の構成例と
異なるのは、接地導体面３等の下方で発振波長の１／３
０〜１／１０の間隔を保って平行に導体平面１１を設け
たこと、およびドレイン７を接続した導体パッチ１ｂ
は、直流バイアスライン１４により直流電源６に接続し
ているが、ゲート８側は無バイアスとしていることの２
点である。FIG. 10 is a perspective view showing a fifth configuration example of the present invention. The fifth configuration example is different from the first configuration example in that one fifth of the oscillation wavelength below the ground conductor surface 3 or the like is used.
Conductor planes 11 are provided in parallel at an interval of 0 to 1/10, and a conductor patch 1b connected to the drain 7
Is connected to the DC power supply 6 by the DC bias line 14, but the gate 8 side is biasless.
Is a point.
【００６７】この第５の構成例では、上記した第１の構
成例の場合と同様に、発振出力の最適化等の効果を奏す
るとともに、さらに次のような効果を発揮するにいた
る。すなわち、導体平面１１を設けたので、第２の構成
例の場合と同様に、単一指向性の平面構造放射型発振装
置とすることができる。また、ゲート側を無バイアスと
したので、発振動作状態でゲート側はセルフバイアスの
状態となって駆動するし、直流電源が一つで済むので、
構成が簡単となり、複数の平面構造放射型発振装置を動
作させる際にも有効となる。In the fifth configuration example, as in the case of the above-described first configuration example, the effects of optimizing the oscillation output and the like are exhibited, and further, the following effects are exhibited. That is, since the conductor plane 11 is provided, it is possible to obtain a unidirectional planar structure radiation type oscillation device as in the case of the second configuration example. Also, since the gate side is biased, the gate side is driven in a self-biased state in the oscillation operation state, and only one DC power supply is required, so
The configuration is simplified, and it is also effective when operating a plurality of planar structure type oscillating devices.
【００６８】図１１は本発明の第６の構成例を示す斜視
図である。この第６の構成例では、導体平面１１を設
け、またゲート側を無バイアスとした点では、上記した
第５の構成例の場合と同様であるが、この第６の構成例
は、さらに導体パッチ１ａ，１ｂのそれぞれに、複数の
チップ状高周波トランジスタ１５を、フリップチップ構
成で接合させている。したがって、ミリ波帯における平
面構造放射型発振装置として実用的な構成となってお
り、チップ状高周波トランジスタ１５の並列運転により
高出力化及び高スペクトル純度化の効果を得ることがで
きる。FIG. 11 is a perspective view showing a sixth configuration example of the present invention. The sixth configuration example is the same as the fifth configuration example in that the conductor plane 11 is provided and the gate side is not biased. However, the sixth configuration example further includes a conductor A plurality of chip-shaped high-frequency transistors 15 are bonded to each of the patches 1a and 1b in a flip-chip configuration. Therefore, it has a practical configuration as a planar structure radiation type oscillation device in the millimeter wave band, and the effect of high output and high spectral purity can be obtained by the parallel operation of the chip-shaped high-frequency transistors 15.
【００６９】図１２は本発明の平面構造放射型発振装置
の発振スペクトルの一例を示す図である。本発明では、
導体パッチ１ａ，１ｂの幅Ｗおよび長さＬ、導体パッチ
１ａ，１ｂ間の距離Ｄ１、並びに導体パッチ１ａ，１ｂ
とその周囲の接地導体面３と間の空隙幅Ｇ（Ｇ１，Ｇ
２）をパラメータとすることで、共振器Ａ，Ｂの空間と
の結合、共振器Ａ，Ｂ相互間の空間結合、及び高周波ト
ランジスタ４（１５）と各共振器Ａ，Ｂとの結合の各度
合いを広い範囲で選択調整することが可能となる。した
がって、その選択調整により、発振スペクトルを鋭く高
い純度のスペクトルとしたり、より広い周波数同期帯域
幅を持つものとしたり、その用途に応じて自在に制御す
ることができる。FIG. 12 is a diagram showing an example of the oscillation spectrum of the planar emission type oscillation device of the present invention. In the present invention,
The width W and length L of the conductor patches 1a and 1b, the distance D1 between the conductor patches 1a and 1b, and the conductor patches 1a and 1b
G (G1, G1)
By using 2) as a parameter, each of the coupling between the resonators A and B, the spatial coupling between the resonators A and B, and the coupling between the high-frequency transistor 4 (15) and each of the resonators A and B can be obtained. The degree can be selected and adjusted in a wide range. Therefore, by the selection and adjustment, the oscillation spectrum can be made a sharp and high-purity spectrum, or can have a wider frequency synchronization bandwidth, and can be controlled freely according to the application.
【００７０】図１３は本発明の平面構造放射型発振装置
の放射パターンの一例を示す図である。導体パッチ１
ａ，１ｂと接地導体面３とからなる面に平行に導体平面
１１を持つ構成の場合であって、正面方向に相対的に強
い放射パターン特性を示している。水平（±９０度）方
向の放射レベルが低く抑えられている。したがって、こ
の一対の共振器からなる平面構造放射型発振装置を同一
平面上に複数配置した場合、その装置間の相互干渉を分
離することができるようになる。FIG. 13 is a diagram showing an example of a radiation pattern of the planar structure type oscillation device of the present invention. Conductor patch 1
This is a case where the conductor plane 11 is provided in parallel with the plane including the a and 1b and the ground conductor surface 3, and shows relatively strong radiation pattern characteristics in the front direction. The radiation level in the horizontal (± 90 degrees) direction is kept low. Therefore, when a plurality of planar structure type oscillating devices including the pair of resonators are arranged on the same plane, mutual interference between the devices can be separated.
【００７１】図１４は公知の一対の対称平面パッチを用
いた放射型発振装置（特願平１１−５９０７０号）の放
射パターンの一例を示す説明図であるが、本発明による
平面構造放射型発振装置の放射パターンと対照的に、水
平方向（±９０度）放射レベルが高いことが分かる。こ
の放射パターン特性の差は、本発明による平面構造放射
型発振装置における発振及び放射のための共振器構造
が、接地導体面３で囲まれている構造であることに関係
している。FIG. 14 is an explanatory view showing an example of a radiation pattern of a radiation type oscillating device (Japanese Patent Application No. 11-59070) using a pair of known symmetrical plane patches. It can be seen that the horizontal (± 90 degrees) radiation level is high, in contrast to the radiation pattern of the device. This difference in the radiation pattern characteristics relates to the fact that the resonator structure for oscillation and radiation in the planar structure type oscillating device according to the present invention is a structure surrounded by the ground conductor surface 3.
【００７２】なお、上記の説明では導体パッチ１ａ，１
ｂは対称な形状のものを使用するようにしたが、必ずし
も対称な形状でなくともよい。In the above description, the conductor patches 1a, 1
Although b has a symmetrical shape, it does not have to be a symmetrical shape.
【００７３】また、高周波トランジスタ４に電解効果型
のものを使用するようにしたが、その他のタイプ、例え
ば接合型のものを使用するようにしてもよい。接合型高
周波トランジスタを使用する場合は、ベース及びコレク
タを導体パッチの異なる一方にそれぞれ接続し、エミッ
タを接地導体面に接続する。特にヘテロバイポーラトラ
ンジスタ（ＨＢＴ）等の利用により、接合型の高周波ト
ランジスタの特性を活かした低雑音の平面構造放射型発
振装置が実現できる。Although the high-frequency transistor 4 is of the field effect type, it may be of another type, for example, of the junction type. When a junction type high frequency transistor is used, the base and the collector are connected to different ones of the conductor patches, respectively, and the emitter is connected to the ground conductor surface. In particular, by using a hetero-bipolar transistor (HBT) or the like, a low-noise planar-structure emission type oscillation device utilizing the characteristics of a junction-type high-frequency transistor can be realized.
【００７４】[0074]
【発明の効果】この発明は上記した構成からなるので、
以下に説明するような効果を奏することができる。Since the present invention has the above-described configuration,
The following effects can be obtained.
【００７５】請求項１に記載の発明では、誘電体基板上
に一対の導体パッチと、その各導体パッチとは空隙を保
つ接地導体面とを配置して、一対の共振器を構成したの
で、共振器の各々は、導体パッチの幅および長さ、導体
パッチ間の距離、並びに導体パッチと接地導体面との空
隙幅をパラメータとすることで、共振器の空間との結
合、共振器相互間の空間結合、及び高周波増幅素子と各
共振器との結合の各度合いを広い範囲で選択調整するこ
とが可能となる。According to the first aspect of the present invention, a pair of resonators are formed by arranging a pair of conductor patches on the dielectric substrate and a ground conductor surface that keeps a gap between the conductor patches. Each of the resonators has a parameter of the width and length of the conductor patch, the distance between the conductor patches, and the gap width between the conductor patch and the ground conductor surface, so that the coupling with the cavity space and the distance between the resonators can be achieved. , And the degree of coupling between the high frequency amplifying element and each resonator can be selectively adjusted over a wide range.
【００７６】これにより、直流バイアスラインにより高
周波増幅素子に接続された直流電源からのＤＣ電力を高
い効率でマイクロ波ミリ波帯の高周波発振出力（ＲＦ電
力）として空間に取り出すことができる。すなわち、平
面構造放射型発振装置の発振出力の最適化が可能とな
る。As a result, DC power from the DC power supply connected to the high-frequency amplification element via the DC bias line can be taken out into space as high-frequency oscillation output (RF power) in the microwave millimeter wave band with high efficiency. That is, it is possible to optimize the oscillation output of the planar structure emission type oscillation device.
【００７７】また、本発明による一対の共振器は、一対
の導体パッチと、その導体パッチの周囲に空隙を介して
囲む接地導体面とで形成されることから、この一対の共
振器からなる平面構造放射型発振装置を同一平面上に複
数配置した場合でも装置間の相互干渉を分離することが
でき、したがって、互いに異なる周波数を持つ複数の独
立した通信回線を構成できすることができる。また、異
なる指向ビームにより複数の通信回線を並列に確保する
ことができ、さらにアレー構成によるビーム形成へ応用
することができる。Further, since the pair of resonators according to the present invention are formed by a pair of conductor patches and a ground conductor surface surrounding the conductor patches with a gap therebetween, a plane formed by the pair of resonators is provided. Even when a plurality of structural emission type oscillation devices are arranged on the same plane, mutual interference between the devices can be separated, and thus a plurality of independent communication lines having different frequencies can be configured. Further, a plurality of communication lines can be secured in parallel by using different directional beams, and the present invention can be applied to beam forming by an array configuration.
【００７８】また、本発明では、導体パッチ間の距離を
発振波長の１／９０から１／１５と近接配置とした構成
により、ゲート側へ同位相の電磁界が誘起されやすく、
正帰還条件が満足され、発振が成長し大振幅動作の状態
で、空間への電磁界の放射を含めた損失の和が、高周波
増幅素子による高周波電力の供給と釣り合った状態で定
常状態に達する。一対の共振器に蓄積された電磁界エネ
ルギーは、定常状態において一定の割合で空間に放射さ
れ、ほぼ対称な放射パターンを持つ平面構造放射型発振
装置となる。Further , according to the present invention , the distance between the conductor patches is set to be close to 1/90 to 1/15 of the oscillation wavelength, so that an in-phase electromagnetic field is easily induced on the gate side.
When the positive feedback condition is satisfied, the oscillation grows, and the large amplitude operation is performed, the steady state is reached with the sum of the losses including the radiation of the electromagnetic field to the space balanced with the supply of the high-frequency power by the high-frequency amplifier. . The electromagnetic field energy stored in the pair of resonators is radiated into space at a constant rate in a steady state, and a planar structure radiating oscillator having a substantially symmetric radiation pattern is obtained.
【００７９】また、請求項３に記載の発明では、導体パ
ッチの長さを、発振波長の２／５〜３／５としたので次
のような効果を奏する。すなわち、導体パッチと接地導
体面と空隙領域とで形成される共振器での実効波長は、
導体パッチの幅、空隙領域の幅及び接地導体面と平行に
配置される導体平面との間隔等に依存し、誘電体基板の
比誘電率の効果を含め、０．８〜１．２倍の程度の範囲
でずれを生じることから、導体パッチの長さを、上記の
パラメータの条件にあわせて発振波長の２／５〜３／５
の間で選ぶことで発振周波数を設定することができる。
さらに、上記のパラメータの条件の選択により発振のた
めの共振器のＱ値を調整できることから、相対的に高い
スペクトル純度の発振が得られる状態からスペクトルの
純度は多少劣るが、広い同期可能周波数帯域特性を持つ
発振状態を選択できるようになる。一般には、共振器
は、空間と整合が採れた平面アンテナとはならず、空間
に対して弱く結合する平面共振器となる。According to the third aspect of the present invention, since the length of the conductor patch is set to 2/5 to 3/5 of the oscillation wavelength, the following effects can be obtained. That is, the effective wavelength in the resonator formed by the conductor patch, the ground conductor surface, and the void region is:
Depends on the width of the conductor patch, the width of the void region, the distance between the ground conductor surface and the conductor plane arranged in parallel, etc., including the effect of the relative dielectric constant of the dielectric substrate, 0.8 to 1.2 times. In this case, the length of the conductor patch is adjusted to 2/5 to 3/5 of the oscillation wavelength in accordance with the above-mentioned parameter conditions.
The oscillation frequency can be set by selecting between.
Furthermore, since the Q value of the resonator for oscillation can be adjusted by selecting the conditions of the above parameters, the purity of the spectrum is slightly inferior from the state where the oscillation of relatively high spectral purity is obtained, but the wide synchronizable frequency band An oscillation state having characteristics can be selected. In general, the resonator is not a planar antenna matched with the space, but is a planar resonator weakly coupled to the space.
【００８０】また、請求項４に記載の発明では、導体パ
ッチおよび接地導体面から下方で発振波長の１／４の距
離に、平行に導体平面を配置したので、一対の導体パッ
チ及び接地導体面の両側にほぼ対称な放射パターンで放
射される電磁界の内、該一対の導体パッチ及び接地導体
面の下方に放射される成分は、当該平行な導体平面で反
射され、導体面での位相ずれを含め一波長に相当する位
相差で重畳されるため強め合い、単一指向性の平面構造
放射型発振装置となる。According to the fourth aspect of the present invention, since the conductor plane is arranged in parallel at a distance of の of the oscillation wavelength below the conductor patch and the ground conductor surface, a pair of the conductor patch and the ground conductor surface are provided. Of the electromagnetic field radiated in a substantially symmetric radiation pattern on both sides of the pair, the component radiated below the pair of conductor patches and the ground conductor surface is reflected by the parallel conductor plane, and the phase shift at the conductor surface Are superimposed with a phase difference corresponding to one wavelength, thereby constructing a unidirectional planar structure radiation type oscillation device.
【００８１】請求項５に記載の発明では、導体パッチお
よび接地導体面から下方で発振波長の１／４の距離に、
集束性の反射鏡面を配置したので、一対の導体パッチ及
び接地導体面の両側にほぼ対称な放射パターンで放射さ
れる電磁界の内、該一対の導体パッチ及び接地導体面の
下方に放射される成分は、当該平行な導体平面で反射さ
れ、導体面での位相ずれを含め一波長に相当する位相差
で重畳されるため強め合い、単一指向性の平面構造放射
型発振装置となる。According to the fifth aspect of the present invention, at a distance of １ ／ of the oscillation wavelength below the conductor patch and the ground conductor surface,
Since the converging reflecting mirror surface is disposed, the electromagnetic field radiated in a substantially symmetrical radiation pattern on both sides of the pair of conductor patches and the ground conductor surface is radiated below the pair of conductor patches and the ground conductor surface. The components are reflected on the parallel conductor planes and are superimposed with a phase difference corresponding to one wavelength including a phase shift on the conductor planes, so that they are reinforced to form a unidirectional planar structure radiation type oscillation device.
【００８２】請求項６に記載の発明では、誘電体基板上
の導体パッチおよび接地導体面から下方で発振波長の１
／３０〜１／１０の距離に、平行に導体平面を配置した
ので、共振器の各々は、バックプレート付き共振器とな
り、共振器のインピーダンスを、導体平面が平行に配置
されていない場合と比較して、低減することができる。According to the sixth aspect of the present invention, the oscillation wavelength of 1 below the conductor patch on the dielectric substrate and the ground conductor surface.
Since the conductor planes are arranged in parallel at a distance of / 30 to 1/10, each of the resonators becomes a resonator with a back plate, and the impedance of the resonator is compared with the case where the conductor planes are not arranged in parallel. Thus, it can be reduced.
【００８３】また、請求項７に記載の発明では、電界効
果型高周波トランジスタを用い、ゲートは一方の導体パ
ッチに、ドレインは他方の導体パッチに、またソースは
接地導体面にそれぞれ接続し、直流電源は少なくともド
レインを接続した導体パッチに接続するようにしたの
で、電解効果型の高周波トランジスタの特性を活かした
低雑音の平面構造放射型発振装置を実現することができ
る。According to a seventh aspect of the present invention, a field-effect high-frequency transistor is used, the gate is connected to one conductor patch, the drain is connected to the other conductor patch, the source is connected to the ground conductor surface, Since the power source is connected to at least the conductor patch to which the drain is connected, it is possible to realize a low-noise planar structure radiating oscillation device that utilizes the characteristics of the field effect type high-frequency transistor.
【００８４】さらに、請求項８に記載の発明では、接合
型高周波トランジスタを用い、ベースは一方の導体パッ
チに、コレクタは他方の導体パッチに、またエミッタは
接地導体面にそれぞれ接続し、直流電源は少なくともコ
レクタを接続した導体パッチに接続するようにしたの
で、接合型の高周波トランジスタの特性を活かした低雑
音の平面構造放射型発振装置を実現することができる。Further, in the invention according to claim 8 , a junction type high-frequency transistor is used, the base is connected to one conductor patch, the collector is connected to the other conductor patch, and the emitter is connected to the ground conductor surface. Is connected to at least the conductor patch to which the collector is connected, so that it is possible to realize a low-noise planar structure emission type oscillation device utilizing the characteristics of the junction type high-frequency transistor.
【００８５】また、請求項９に記載の発明では、誘電体
基板は、高周波誘電損失の小さい、高純度シリコン、石
英、サファイア、アルミナ、ＰＴＦＥ、ポリエチレン等
の材料で形成したので、実用的で高効率な平面構造放射
型発振装置が実現することができる。According to the ninth aspect of the present invention, since the dielectric substrate is formed of a material such as high-purity silicon, quartz, sapphire, alumina, PTFE, or polyethylene, which has a small high-frequency dielectric loss, it is practical and high-performance. An efficient planar structure radiating oscillation device can be realized.
【図１】本発明の平面構造放射型発振装置の第１の構成
例を示す斜視図である。FIG. 1 is a perspective view showing a first configuration example of a planar structure emission type oscillation device according to the present invention.
【図２】本発明の平面構造放射型発振装置の第１の構成
例の要部を示す平面図である。FIG. 2 is a plan view showing a main part of a first configuration example of the planar structure radiation type oscillation device according to the present invention.
【図３】図２のＩ−Ｉ線断面図である。FIG. 3 is a sectional view taken along line II of FIG. 2;
【図４】本発明の平面構造放射型発振装置の第２の構成
例を示す断面図である。FIG. 4 is a cross-sectional view showing a second configuration example of the planar structure radiating type oscillation device according to the present invention.
【図５】本発明の平面構造放射型発振装置の第２の構成
例のうち、集束性反射鏡を用いた例を示す断面図であ
る。FIG. 5 is a cross-sectional view showing an example in which a converging reflector is used in the second configuration example of the planar structure type oscillating device of the present invention.
【図６】本発明の平面構造放射型発振装置の第２の構成
例のうち、集束性反射鏡を用いた例を示す断面図であ
る。FIG. 6 is a cross-sectional view showing an example using a converging reflector in a second configuration example of the planar structure radiation type oscillation device according to the present invention.
【図７】本発明の平面構造放射型発振装置の第２の構成
例のうち、集束性反射鏡を用いた例を示す断面図であ
る。FIG. 7 is a cross-sectional view showing an example using a converging reflector in a second configuration example of the planar structure emission type oscillation device of the present invention.
【図８】本発明の平面構造放射型発振装置の第３の構成
例を示す断面図である。FIG. 8 is a cross-sectional view illustrating a third configuration example of the planar structure type oscillating device of the present invention.
【図９】本発明の平面構造放射型発振装置の第４の構成
例の要部を示す平面図である。FIG. 9 is a plan view showing a main part of a fourth configuration example of the planar structure type oscillating device of the present invention.
【図１０】本発明の平面構造放射型発振装置の第５の構
成例を示す斜視図である。FIG. 10 is a perspective view showing a fifth configuration example of the planar structure type oscillating device of the present invention.
【図１１】本発明の平面構造放射型発振装置の第６の構
成例を示す斜視図である。FIG. 11 is a perspective view showing a sixth example of the configuration of the planar structure emission type oscillation device of the present invention.
【図１２】本発明の平面構造放射型発振装置の発振スペ
クトルの一例を示す図である。FIG. 12 is a diagram showing an example of an oscillation spectrum of the planar structure emission type oscillation device of the present invention.
【図１３】本発明の平面構造放射型発振装置の放射パタ
ーンの一例を示す図である。FIG. 13 is a diagram showing an example of a radiation pattern of the planar structure radiation type oscillation device of the present invention.
【図１４】公知の一対の対称平面パッチを用いた放射型
発振装置の放射パターンの一例を示す図である。FIG. 14 is a diagram illustrating an example of a radiation pattern of a radiation type oscillation device using a pair of known symmetric plane patches.
【図１５】公知の高周波帯発振装置の一構成の概念を示
す説明図である。FIG. 15 is an explanatory diagram showing the concept of one configuration of a known high-frequency band oscillation device.
【図１６】公知の発振用共振器が電磁波の出力部分を兼
ねる放射型発振装置の一構成の概念を示す説明図であ
る。FIG. 16 is an explanatory diagram showing the concept of one configuration of a radiation type oscillation device in which a known oscillation resonator also functions as an output part of an electromagnetic wave.
【図１７】公知の発振用共振器が電磁波の出力部分を兼
ねる放射型発振装置の他の構成の概念を示す説明図であ
る。FIG. 17 is an explanatory diagram showing the concept of another configuration of a radiation type oscillation device in which a known oscillation resonator also functions as an output portion of an electromagnetic wave.
【図１８】公知の発振用共振器が電磁波の出力部分を兼
ねる放射型発振装置の具体的な構成を示す説明図であ
る。FIG. 18 is an explanatory diagram showing a specific configuration of a radiation type oscillation device in which a known oscillation resonator also serves as an electromagnetic wave output portion.
【図１９】公知の負性抵抗増幅回路とアンテナ素子を同
一平面に近接して配置する公知の発振装置の構成を示す
説明図である。FIG. 19 is an explanatory diagram showing a configuration of a known oscillation device in which a known negative resistance amplifier circuit and an antenna element are arranged close to the same plane.
【図２０】公知のアンテナ機能を兼ねる共振器を用いた
放射型発振装置の他の構成を示す説明図である。FIG. 20 is an explanatory diagram showing another configuration of a radiation type oscillation device using a known resonator that also has an antenna function.
【図２１】公知の平面パッチ共振器を用いた放射型発振
装置の別の構成を示す説明図である。FIG. 21 is an explanatory diagram showing another configuration of a radiation type oscillation device using a known planar patch resonator.
【図２２】公知のリングスロット型アンテナを発振用の
共振器として用いた放射型発振装置の構成を示す説明図
である。FIG. 22 is an explanatory diagram showing a configuration of a radiation type oscillation device using a known ring slot type antenna as a resonator for oscillation.
１ａ，１ｂ 導体パッチ ２ 空隙領域 ３ 接地導体面 ４ 高周波トランジスタ ５ａ，５ｂ 低域フィルタ ６ａ，６ｂ 直流電源 ７ ドレイン ８ ゲート ９ ソース １０ 誘電体基板 １１ 導体平面 １２ 凸レンズ状の誘電体 １３ 凹面反射鏡 １４ 直流バイアスライン １５ チップ状高周波トランジスタ １２１ 円柱状の誘電体 Ａ 共振器 Ｂ 共振器 Ｄ 導体パッチ間の接地導体面の幅 Ｄ１ 導体パッチ間の距離 Ｇ 導体パッチと接地導体面と間の空隙幅 Ｌ 導体パッチの長さ Ｗ 導体パッチの幅 1a, 1b Conductor patch 2 Air gap region 3 Ground conductor surface 4 High frequency transistor 5a, 5b Low pass filter 6a, 6b DC power supply 7 Drain 8 Gate 9 Source 10 Dielectric substrate 11 Conductor plane 12 Convex lens-like dielectric 13 Concave reflector 14 DC bias line 15 Chip-shaped high-frequency transistor 121 Cylindrical dielectric A Resonator B Resonator D Width of ground conductor surface between conductor patches D1 Distance between conductor patches G Gap width between conductor patch and ground conductor surface L conductor Patch length W Conductor patch width
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01Q 23/00 H01Q 13/08 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) H01Q 23/00 H01Q 13/08
Claims (9)
体パッチと、 上記誘電体基板上に各導体パッチとは空隙を保って配置
した接地導体面と、 上記導体パッチの各々と接地導体面とにその端子を接続
して配置した高周波増幅素子と、 上記導体パッチの各々に接続した直流電源と、 を備え、 上記導体パッチの各々と接地導体面とでそれぞれ共振器
を構成し、その共振器の各々に直流電源からの電力を高
周波増幅素子を介して入力し、マイクロ波ミリ波帯の高
周波発振出力を空間に取り出し、 上記導体パッチ間の距離は、発振波長の１／９０〜１／
１５とする、 ことを特徴とする平面構造放射型発振装置。1. A pair of conductor patches arranged in parallel on a dielectric substrate, a ground conductor surface arranged on the dielectric substrate with a gap between each conductor patch, and each of the conductor patches and a ground conductor A high-frequency amplifying element having its terminals connected to a surface thereof, and a DC power supply connected to each of the conductor patches, wherein each of the conductor patches and the ground conductor surface constitute a resonator, respectively. power from the DC power supply to each of the resonator input via the high-frequency amplifying device, and eject the high frequency oscillation output of the microwave and millimeter wave band to the space, the distance between the conductor patches, the oscillation wavelength 1/90 ~ 1 /
15. A planar structure emission type oscillation device, wherein the oscillation frequency is 15 .
よび長さ、導体パッチ間の距離、並びに導体パッチと接
地導体面との空隙幅をパラメータとしてその高周波発振
出力が制御される、請求項１に記載の平面構造放射型発
振装置。2. The high-frequency oscillation output of each of the resonators is controlled by parameters of a width and a length of a conductor patch, a distance between the conductor patches, and a gap width between the conductor patch and a ground conductor surface. Item 2. A planar structure emission type oscillation device according to item 1.
／５〜３／５とする、請求項１に記載の平面構造放射型
発振装置。3. The method according to claim 1, wherein the length of the conductor patch is set to 2 of the oscillation wavelength.
2. The planar structure emission type oscillator according to claim 1 , wherein the ratio is to ／ .
地導体面から下方で発振波長の１／４の距離に、平行に
導体平面を配置した、請求項１に記載の平面構造放射型
発振装置。4. A conductor patch and a contact on the dielectric substrate.
Parallel to the distance of 1/4 of the oscillation wavelength below the ground plane
The planar structure radiation type oscillation device according to claim 1, wherein a conductor plane is arranged .
地導体面から下方で発振波長の１／４の距離に、集束性
の反射鏡面を配置した、請求項１に記載の平面構造放射
型発振装置。5. A conductor patch and a contact on the dielectric substrate.
Focusing ability at a distance of 1/4 of the oscillation wavelength below the ground plane
The planar structure emission type oscillation device according to claim 1, wherein a reflecting mirror surface is arranged .
地導体面から下方で発振波長の１／３０〜１／１０の距
離に、平行に導体平面を配置した、請求項１に記載の平
面構造放射型発振装置。6. A conductor patch and a contact on the dielectric substrate.
A distance of 1/30 to 1/10 of the oscillation wavelength below the ground plane
The planar structure radiation type oscillation device according to claim 1 , wherein conductor planes are arranged in parallel with each other .
波トランジスタであっ て、ゲートは一方の導体パッチ
に、ドレインは他方の導体パッチに、またソースは接地
導体面にそれぞれ接続し、直流電源は少なくともドレイ
ンを接続した導体パッチに接続する、請求項１に記載の
平面構造放射型発振装置。7. The high frequency amplifying element according to claim 1, wherein said high frequency amplifying element is a field effect type high frequency amplifier.
Wave transistor , the gate is one conductor patch
The drain to the other conductor patch and the source to ground
DC power supply at least
The planar structure oscillating device according to claim 1, wherein the oscillating device is connected to a conductor patch to which the connecting member is connected .
ランジスタであって、ベースは一方の導体パッチに、コ
レクタは他方の導体パッチに、またエミッタは接地導体
面にそれぞれ接続し、直流電源は少なくともコレクタを
接続した導体パッチに接続する、請求項１に記載の平面
構造放射型発振装置。8. The high-frequency amplifier according to claim 1 , wherein said high-frequency amplifier is a junction type high-frequency amplifier.
The transistor is a transistor, and the base is
Lector is on the other conductor patch and emitter is ground conductor
Surface, and the DC power supply must at least
The planar structure radiation type oscillation device according to claim 1, which is connected to the connected conductor patch .
さい、高純度シリコン、石英、サファイア、アルミナ、
ＰＴＦＥ、ポリエチレン等の材料から成る、請求項１に
記載の平面構造放射型発振装置。9. The dielectric substrate according to claim 1, wherein the dielectric substrate has a small high-frequency dielectric loss.
, High-purity silicon, quartz, sapphire, alumina,
2. The oscillating device according to claim 1, wherein the oscillating device is made of a material such as PTFE or polyethylene .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000060115A JP3355337B2 (en) | 2000-03-06 | 2000-03-06 | Planar radiation type oscillation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000060115A JP3355337B2 (en) | 2000-03-06 | 2000-03-06 | Planar radiation type oscillation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001251138A JP2001251138A (en) | 2001-09-14 |
| JP3355337B2 true JP3355337B2 (en) | 2002-12-09 |
Family
ID=18580477
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000060115A Expired - Lifetime JP3355337B2 (en) | 2000-03-06 | 2000-03-06 | Planar radiation type oscillation device |
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| JP (1) | JP3355337B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007114522A1 (en) | 2006-03-31 | 2007-10-11 | National Institute Of Information And Communications Technology | Wireless network system |
| CN102210059A (en) * | 2008-10-08 | 2011-10-05 | 独立行政法人情报通信研究机构 | Pulse wireless communication device |
| US8411613B2 (en) | 2007-09-28 | 2013-04-02 | National Institute Of Information And Communications Technology | Wireless communication network system |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4489539B2 (en) * | 2004-09-03 | 2010-06-23 | 株式会社マキタ | Radar equipment |
| JP4911613B2 (en) * | 2007-06-12 | 2012-04-04 | 独立行政法人情報通信研究機構 | Microwave / millimeter wave communication equipment |
| JP4926907B2 (en) * | 2007-10-05 | 2012-05-09 | シャープ株式会社 | Radiation type oscillation device and wireless relay system |
| JP5565823B2 (en) | 2008-10-07 | 2014-08-06 | 独立行政法人情報通信研究機構 | Pulse signal generator |
| JP5761585B2 (en) * | 2008-10-07 | 2015-08-12 | 国立研究開発法人情報通信研究機構 | Pulse radar equipment |
| JP6450204B2 (en) * | 2015-01-28 | 2019-01-09 | 株式会社ヨコオ | High frequency oscillator |
-
2000
- 2000-03-06 JP JP2000060115A patent/JP3355337B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007114522A1 (en) | 2006-03-31 | 2007-10-11 | National Institute Of Information And Communications Technology | Wireless network system |
| US8160492B2 (en) | 2006-03-31 | 2012-04-17 | National Institute Of Information And Communications Technology | Wireless network system |
| US8411613B2 (en) | 2007-09-28 | 2013-04-02 | National Institute Of Information And Communications Technology | Wireless communication network system |
| CN102210059A (en) * | 2008-10-08 | 2011-10-05 | 独立行政法人情报通信研究机构 | Pulse wireless communication device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001251138A (en) | 2001-09-14 |
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