JP2009094368A - Original conveying device, exposure device, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an original conveying device, an exposure device and a device manufacturing method, such that productivity is improved by reducing sticking of particles suspended in a decompression chamber during air discharge or air supply. <P>SOLUTION: The original conveying device includes the decompression chamber in which a decompression state is maintained and an original is carried in and processed, a mask cassette which is conveyed into the decompression chamber together with the original and includes a dish portion holding the original and a lid portion covering the dish part, a first temperature control means provided to the dish portion to hold the dish portion at first temperature lower than the temperature of the original, and a second temperature control means provided to the lid portion to hold the lid portion at second temperature below the temperature of the dish portion. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an original conveying apparatus, an exposure apparatus, and a device manufacturing method for conveying an original in an exposure apparatus.

A semiconductor exposure apparatus transfers a circuit pattern of a mask, which is an original, onto a wafer such as a semiconductor wafer or a liquid crystal display substrate.
In order to prevent a decrease in yield due to adhering contaminant particles floating on the pattern surface of the mask, the mask is transported in a state controlled to an environment suitable for each process.
However, as the transfer pattern becomes finer, the environment required for the apparatus becomes stricter, and it is necessary to manage the environment of the mask in each process in the original transport apparatus.
In a semiconductor exposure apparatus, the wavelength of exposure light must be shortened in order to make the transfer pattern finer.
For this reason, from the i-line having an exposure wavelength of 365 nm, a KrF excimer laser of 248 nm, an ArF excimer laser of 193 nm, and an F2 excimer laser of 157 nm have been developed recently.
In addition, for further miniaturization, it is necessary to develop an EUV exposure apparatus that uses exposure light having a wavelength of about 13 to 14 nm, which is EUV (Extreme Ultraviolet) light, as a light source.
In the EUV exposure apparatus, since the laser beam is attenuated severely in the atmospheric pressure, the exposure part of the semiconductor exposure apparatus is accommodated in the exposure chamber, and the exposure is performed in the decompression chamber depressurized to a vacuum level with a small attenuation of the laser beam. There is a need.

In order to efficiently carry the mask into and out of the exposure chamber evacuated in this way, a load lock chamber is provided that is temporarily held in a reduced pressure state as a connecting portion between the exposure chamber and the atmospheric space. Yes.
The load lock chamber evacuated to a depressurized state keeps the exposure chamber in a depressurized state, and is not between the depressurized chamber and the mask before and after the process to the exposure chamber so that it is not opened to the atmosphere. Installed.
The load lock chamber stores a mechanism for transferring a mask or an original transport mechanism itself, and is separated from the exposure chamber by a gate valve.
With the load lock chamber decompressed, the gate valve is opened and the mask is carried into or out of the exposure chamber.
Accordingly, air supply and exhaust are repeated each time the mask before or after processing is taken in and out of the load lock chamber.
For this reason, particles generated from the gate valve in the load lock chamber or the original transport mechanism may be lifted and floated during the exhaust or supply process, and the particles may adhere to the mask.
Therefore, it is necessary to reduce particles adhering to the mask in the process of exhausting or supplying air to the load lock chamber.

Conventionally, for example, Japanese Patent No. 2886521 (Patent Document 1) proposes a “load lock chamber of a semiconductor device manufacturing apparatus” that reduces the adhesion of particles to a mask in a load lock chamber.
In this conventional example, a holding unit for mounting a mask is heated to a temperature higher than the ambient temperature, and a low-temperature particle collector maintained at a temperature lower than the ambient temperature is installed around the holding unit.
In this conventional example, a dust-free layer is formed in the vicinity of the holding part and the mask by thermophoretic force to reduce the adhesion of particles to the mask.
The principle of thermophoretic force is that if there is a temperature gradient in the gas surrounding the particle, the particle is given a larger kinetic energy than the gas molecule on the low temperature side, and the force in the direction opposite to the temperature gradient is given. It is what you receive.
As a result, the particles move from the high temperature side object to the low temperature side.
The thermophoretic force Fx can be expressed by the following equation (Talbot equation).

但し、この式では、パーティクルは球形で流体は理想気体であると仮定している。
Ｄｐ＝パーティクル直径
Ｔ＝気体温度
μ＝粘性係数
ρ＝気体密度
Ｋｎ＝クヌーセン数＝２λ／Ｄｐ
λ＝気体の平均自由行程＝η／｛０．４９９Ｐ（８Ｍ／πＲＴ）^１／２｝
Ｍ＝分子量、Ｒ＝気体定数
Ｋ＝ｋ／ｋｐ
ｋ＝平行移動のエネルギーのみによる気体の熱伝導率
ｋｐ＝パーティクルの熱伝導率
Ｃｓ＝１．１７、Ｃｔ＝２．１８、Ｃｍ＝１．１４
ΔＴ／Δｘ＝温度勾配
特許第２８８６５２１号公報

However, this formula assumes that the particles are spherical and the fluid is an ideal gas.
Dp = particle diameter T = gas temperature μ = viscosity coefficient ρ = gas density Kn = Knusen number = 2λ / Dp
λ = mean free path of gas = η / {0.499P (8M / πRT) ^1/2 }
M = molecular weight, R = gas constant K = k / kp
k = thermal conductivity of gas due to energy of translation only kp = thermal conductivity of particles Cs = 1.17, Ct = 2.18, Cm = 1.14
ΔT / Δx = temperature gradient
Japanese Patent No. 2886521

However, since the size of the load lock chamber is restricted by the gate opening size (W360 mm × H80 mm) defined by the unified standard of the semiconductor industry, it cannot be made as small as the outer shape of the original mask.
Therefore, the thermophoretic force in the vicinity of the mask holding part has to depend on the shape of the load lock chamber, and the thermophoretic force cannot be utilized to the maximum extent.
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an original conveying apparatus, an exposure apparatus, and a device manufacturing method that reduce the adhesion of particles floating during exhaust or supply in a decompression chamber to the original and improve productivity. And

  An original transport apparatus of the present invention for solving the above-described problem is a decompression chamber that is held in a reduced pressure state, in which the original is carried in and processed, and the original transported together with the original in the decompression chamber is held A mask cassette comprising a plate portion and a lid portion covering the plate portion, and a first temperature adjusting means provided on the plate portion, wherein the temperature of the plate portion is a first temperature lower than the temperature of the original plate. And a second temperature adjusting means that is provided in the lid portion and sets the temperature of the lid portion to a second temperature lower than the temperature of the original plate.

  According to the present invention, particles floating during exhaust or supply in the decompression chamber are prevented from adhering to the original plate, and productivity is improved.

  Embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a configuration diagram of an embodiment of the present invention, FIG. 2A is a side view of the embodiment 1 of the present invention, and FIG. 2B is a cross-sectional view taken along line AA in FIG. It is.
The decompression chamber 3 is a chamber that is kept in a decompressed state and into which the mask 1 as an original is carried and processed.
The original mask 1 is placed inside the decompression chamber 3 while being mounted inside the mask cassette 2.
The mask cassette 2 is transported and placed in the decompression chamber 3 together with the original mask 1, and a mask cassette lower plate 2B which is a plate portion on which the mask 1 is held, and a mask cassette lower plate 2B which is a plate portion. It consists of a mask cassette upper lid 2A that is a lid for covering.
The mask cassette upper cover 2 </ b> A of the mask cassette 2 is provided with a ventilation mechanism 2 </ b> E capable of venting to the outside so that exhaust and air supply can be performed when the mask cassette 2 surrounds the mask 1.
For this reason, exhaust and supply of air inside the mask cassette 2 can be performed simultaneously with the entire decompression chamber 3 using the pump 6.
The decompression chamber 3 is partitioned by gate valves 13 and 14, and the gate valves 13 and 14 are opened to adjacent processing chambers (not shown), and the mask cassette 1 or the mask cassette 2 in which the mask 1 is mounted is transferred to the mask cassette. It is carried in or out by means 16.
Accordingly, each time the mask 1 before or after treatment is taken in and out of the decompression chamber 3, air supply and exhaust are repeated.

The mask cassette 2 includes a mask cassette upper lid 2A, a mask cassette lower tray 2B including a mask holding portion 2C, a ventilation mechanism 2E, and a seal portion 2D for spatially sealing the mask cassette upper lid 2A and the mask cassette lower tray 2B.
The mask holding part 2C for holding the mask 1 is a material that can be insulated or a structure that can reduce the thermal conductivity in order to generate a temperature gradient between the mask 1 and the mask cassette lower plate 2B. Made of material.
The first temperature adjusting means 7 is provided in the mask cassette lower plate 2B which is the plate portion, and sets the mask cassette lower plate 2B to a first temperature lower than that of the mask 1 which is the original plate.
The second temperature adjusting means 8 is provided on the mask cassette upper lid 2A as the lid, and sets the mask cassette upper lid 2A to a second temperature lower than that of the mask 1 as the original.
The mask cassette lower plate 2B is brought to the first temperature by the first temperature adjusting means 7.
The upper cover of the mask cassette is brought to the second temperature by the second temperature adjusting means.
The first temperature and the second temperature are lower than the temperature of the mask 1 and are temperatures at which thermophoretic force can be generated.
The distance between the mask 1 and the mask cassette lower plate 2B and the distance between the mask 1 and the mask cassette upper lid 2A are distances that can generate a thermophoretic force in relation to the first temperature and the second temperature, respectively. is there.

The third temperature adjusting means 9 is provided on the inner wall 3A of the decompression chamber 3, and the inner wall 3A is set to a third temperature lower or higher than the first temperature or the second temperature at which thermophoretic force can be generated.
Further, the distance between the inner wall 3A of the decompression chamber 3 and the mask cassette 2B is a distance capable of generating a thermophoretic force.
When the third temperature is lower than the first temperature and the second temperature, the particles 10 adhere to the decompression chamber wall due to the thermophoretic force.
In this case, particles adhering to the outer periphery of the mask cassette 2 are reduced, and when the mask cassette 2 is carried into an adjacent processing chamber, the possibility of contaminating the adjacent chamber by the particles adhering to the mask cassette 2 is reduced. it can.
Conversely, when the third temperature is higher than the first temperature and the second temperature, the particles 10 adhere to the mask cassette 2 due to the thermophoretic force.
In this case, all the particles 10 existing inside the decompression chamber 3 or entering the decompression chamber 3 adhere to the mask cassette 2 due to the thermophoretic force.
As a result, particles in the decompression chamber 3 can be reduced, the decompression chamber 3 is cleaned, and the mask cassette 2 to which the particles adhere can be cleaned outside the apparatus.
At that time, if the mask 2 is not mounted, it is effective as a means for cleaning the decompression chamber 3.

All the first, second, and third temperature adjusting means 7, 8, and 9 of the first embodiment include temperature detecting means.
In the first embodiment, the temperature of the mask cassette 2 and the decompression chamber 3 is adjusted so that the temperature gradient of the space becomes 10 K / cm.
That is, in the first embodiment, the temperature gradient of the space temperature between the inner wall 3A of the decompression chamber 3 and the mask cassette upper lid 2A as the lid, and between the inner wall 3A of the decompression chamber 3 and the mask cassette lower pan 2B as the dish. Are positions and shapes of 10 K / cm or more.
Furthermore, in the first embodiment, the temperature gradient of the space temperature between the mask cassette upper lid 2A as the lid and the mask 1 as the original, and between the mask cassette lower plate 2B as the plate and the mask 1 as the original is changed. The position and shape are 10 K / cm or more.
For this reason, when the pressure in the decompression chamber 3 is 1000 Pa, a thermophoretic force of 1.50E-15 [N] acts on particles having a particle diameter of 0.2 μm.
In the first embodiment, the atmosphere inside the decompression chamber 3 is maintained at a pressure of 0.001 to 1000 Pa.
When the silver plating used in the decompression chamber 3 floats in the exhaust or supply air, the gravity acting on the silver particles having a particle diameter of 0.2 μm is 4.31-E16 [N].
Accordingly, since the thermophoretic force is greater than the gravity, silver particles having a particle size of 0.2 μm or less move in the direction in which the thermophoretic force acts rather than gravity sedimentation.
The mask cassette mounting unit 4 may have a function of joining with the temperature adjusting means and may have a lifting function for moving the mask cassette 2 up and down.
According to the first embodiment, a thermophoretic force is generated between the original mask 1 and the mask cassette 2 in the process of exhausting or supplying air to the decompression chamber 3, and the mask cassette starts from the outer peripheral surface of the original mask 1. Move the particles in the direction of 2.
For this reason, particles adhering to the outer peripheral surface of the mask 1 which is the original plate during exhaust or supply are reduced.
In addition, the particles that have passed through the ventilation mechanism 2E of the mask cassette 2 or have passed through the ventilation mechanism 2E by this thermophoretic force adhere to the mask 1 that is the original plate again when air is supplied or exhausted inside the decompression chamber 3. To reduce that.

A second embodiment of the present invention will be described with reference to the side view of FIG.
The mask cassette lower plate 2B, which is a plate portion, and the mask cassette upper cover 2A, which is a cover portion, are composed of a plurality of layers 2A-1, 2A-2, 2B-1, and 2B-2.
The first individual temperature adjusting means 7A of the first temperature adjusting means 7 and the second individual temperature adjusting means 7B of the second temperature adjusting means 8 include a plurality of mask cassette lower pan 2B and mask cassette upper lid 2A. The layers 2A-1, 2A-2, 2B-1, 2B-2 are each independently temperature controlled.
Further, the first individual temperature adjusting means 7A and the second individual temperature adjusting means 7B adjust the temperature of the layers 2A-2 and 2B-1 facing the mask 1 to be equal to or lower than the temperature of the mask 1, and the decompression chamber. 3 is made higher than the third temperature.
Thus, when a thermophoretic force is generated between the decompression chamber 3 and the mask cassette 2, the temperatures of the layers 2A-1 and 2B-2 which are the outer peripheral surfaces of the mask cassette 2 are changed to the layers which are the inner peripheral surfaces of the mask cassette 2. The temperature is higher than 2A-2 and 2B-1.
For this reason, the temperature of the decompression chamber 3 can be lowered.
This is effective in that the influence of the temperature on the external environment of the decompression chamber 3 and the adjacent chamber (not shown) can be reduced.
Therefore, the mask cassette lower plate 2B of the mask cassette 2 and the mask cassette upper lid 2A, which is the lid, are made of a heat-insulating material or a structure and material capable of reducing the thermal conductivity.
According to the second embodiment, thermophoresis is performed between the mask 1 and the mask cassette 2 in the process of exhausting or supplying air from the decompression chamber 3 or in the process before loading the apparatus in which the mask 1 is mounted on the mask cassette 2. Generate power.
For this reason, particles can be moved in the direction away from the outer peripheral surface of the mask 1, which is the direction of the inner surface of the mask cassette 2 from the vicinity of the outer peripheral surface of the mask 1, and particles entering between the mask cassette 2 and the mask 1 can be moved. Can be reduced.

A third embodiment of the present invention will be described with reference to the side view of FIG.
The third embodiment is a modification of the first and second embodiments.
The third embodiment includes an intake means 20 for opening the decompression chamber 3 to the atmosphere and an exhaust means 19 for decompressing.
The pressure detection means 18 for confirming that the decompression chamber 3 has been decompressed opens the gate valve at the pressure control unit in the control unit 17 and carries the mask 1 or the mask cassette 2 equipped with the mask, Or carry out.
Moreover, it has the temperature control part comprised in the control part 17 for controlling each temperature adjustment means.
By installing a dust removing filter 21 at the air supply port of the intake means 20, it is possible to reduce the particles in the decompression chamber 3 from being rolled up, and particles from the piping of the air supply system to enter the decompression chamber 3. Is reduced.
In the decompression chambers according to the first, second, and third embodiments, thermophoretic force acts on particles floating in the vicinity of the mask surface and particle adhesion to the mask surface can be reduced. Contributes to improvement.

With reference to a side view of FIG. 5, an exposure apparatus according to Embodiment 4 of the present invention will be described.
The fourth embodiment is an exposure apparatus on which any one of the original plate conveying apparatuses of the first to third embodiments is mounted.
First, the light source of the fourth embodiment will be described.
The excitation laser 101 is a means for emitting light by irradiating a laser beam toward a point where a light source material serving as a light emitting point of a light source is gasified, liquefied or atomized, and exciting light source material atoms with plasma. It consists of a solid laser.
The light source light emitting unit 102 is a light emitting unit of an exposure light source, and has a structure in which the inside is kept in a reduced pressure state.
The light source mirror 102B is a hemispherical mirror centered on the light source 102A, which collects and reflects all spherical light from the light source 102A in the light emitting direction.
The point of the light source 102A is ejected with liquefied Xe, liquefied Xe spray or Xe gas as a light emitting element by a nozzle (not shown) and irradiated with light from the excitation laser 1.

Next, the exposure chamber of the fourth embodiment will be described.
The exposure chamber 103 is a decompression chamber that is connected to a light source and is decompressed by a decompression pump 104A, which is an exhaust means 104, and can maintain a decompressed pressure suitable for EUV exposure.
The exposure light introducing unit 105 is a part that introduces and molds exposure light from the light source light emitting unit 102, and is configured by mirrors 105A to 105D, and homogenizes and shapes the exposure light.
A mask 106A, which is a reflection original plate of the exposure pattern, is electrostatically held by the movable part on the mask stage 106.
The reduction projection mirror optical system 107 is an optical system that reduces and projects the exposure pattern reflected from the mask 106A, and sequentially projects and reflects the exposure pattern reflected by the mask 106A onto the mirrors 107A to 107E, and finally at a prescribed reduction ratio. Reduced projection onto the wafer 108A.
The wafer stage 108 is positioned in a predetermined exposure position for the wafer 108A, which is an Si substrate that exposes the pattern reflected and reduced by the mask 106A, at a predetermined exposure position in the tilt direction about the XYZ and XY axes and in the rotational direction about the Z axis. Positioning is controlled so that 6-axis drive is possible.
The mask stage support 109 is supported on the floor on which the mask stage 106 is installed.
The optical system support 110 supports the reduction projection mirror optical system 107 on the floor on which it is installed.
Wafer stage support 111 supports wafer stage 108 on the floor on which it is installed.
The mask stage 106 and the reduction projection mirror optical system 107, and the reduction projection mirror optical system 107 and the wafer stage 108 are separated by a mask stage support 109, an optical system support 110, and a wafer stage support 111. To be supported.
Means for measuring the relative position between the mask stage 106 and the reduction projection mirror optical system 107, and between the reduction projection mirror optical system 107 and the wafer stage 108, and maintaining and controlling the relative position continuously (not shown). ) Is provided.
The mask stage support 109, the optical system support 110, and the wafer stage support 111 are provided with mounts (not shown) that insulate vibrations from the apparatus installation floor.

Furthermore, the wafer conveyance of the fourth embodiment will be described.
The wafer stocker 116 is a means for temporarily storing the wafer 108A transferred by the atmospheric wafer vacuum transfer means 117A inside the exposure apparatus.
The wafer stocker 116 stores a plurality of wafers.
A wafer 108A to be exposed is selected from the wafer stocker 116, and is transferred to the holding unit 118 in the load lock chamber 125.
The shield 119 is a means for surrounding the periphery of the wafer 108A.
The gate valve 120B opens and closes when the load lock chamber is at 125 atmospheric pressure.
The gate valve 120E opens and closes when the load lock chamber 125 is decompressed.
The wafer vacuum transfer means 117B capable of transferring the wafer 108A is transferred from the holding unit 118 to a wafer mechanical pre-alignment temperature controller (not shown) in the exposure chamber.
A wafer mechanical pre-alignment temperature controller (not shown) performs feed coarse adjustment in the rotation direction of the wafer 108A, and at the same time, sets the temperature of the wafer 108A to the reference temperature of the exposure apparatus of the fourth embodiment.
Wafer vacuum transfer means 117 </ b> B sends wafer 108 </ b> A, whose alignment and temperature are adjusted by a wafer mechanical pre-alignment temperature controller (not shown), to wafer stage 108.
The process of unloading the wafer 108A from the exposure chamber is the reverse of the loading process.

Next, the conveyance of the mask which is the original plate of the fourth embodiment will be described.
The SMIF pod 127 is a mini-environment used to transport the mask cassette 131 in the device factory.
The mask cassette 131 is held in the SMIF pod, and the SMIF pod 127 is opened and closed by the SMIF indexer 126. At the same time, the mask cassette 131 is drawn into the exposure apparatus and can be transported by the original transport means 114A.
The load lock chamber 124 is a means for converting the mask cassette 131 from an air atmosphere to a reduced pressure atmosphere, and includes a cassette holding portion (not shown) inside.
The gate valve 120A is a gate opening / closing mechanism that opens and closes when the load lock chamber 124 is in an atmospheric pressure state and carries the mask 106A from the SMIF indexer 126 to the holding portion of the load lock chamber 124.
The same applies to the gate valve 120B, which opens and closes when the load lock chamber is in a decompressed state.
The gate valve 120C opens and closes only when the mask 106A is transferred to the exposure chamber.
The mask stocker 112 is a means for temporarily storing the mask 106A in the mask cassette 131 inside the apparatus from the outside of the apparatus, and the masks 106A adapted to different patterns and different exposure conditions are stored in multiple stages.
The original conveying means 114B is means for conveying the mask cassette 131 from the load lock chamber 124 to the mask stocker 112.
Further, the original transport means 114 selects the mask 106A to be used from the mask stocker 112, and transports the mask cassette 131 to the cover opening mechanism 113A that separates the cassette upper cover 131A and the cassette lower plate 131B.
Further, the original plate transport unit 114 transports the cassette lower plate 131B separated by the lid opening mechanism 113A to the mask alignment scope 115 provided at the end of the mask stage 106.
Further, the original conveying means 114 performs fine alignment on the mask 106A in the XYZ axis rotation direction with respect to the alignment mark 115A shown in FIG. 5 provided on the basis of the reduction projection mirror optical system 107.
The mask 106A after the alignment is chucked on the mask stage 106 directly from the cassette lower plate 131B.
At this time, at least one of the raising of the cassette supporting portion and the lowering of the mask stage is performed so that the relative positions of the cassette supporting portion of the alignment portion and the mask stage 106 are close to each other.
At that time, the inclination of the mask 106A and the mask stage 106 is also adjusted.
After delivering the mask 106A to the mask stage 106, the empty cassette lower tray 131B is pulled back to the lid opening / closing mechanism 113A by the original plate transport means 114, and is stored in the mask stocker 112 with the lid closed and empty.

Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described with reference to FIGS.
FIG. 6 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, and the like). Here, a semiconductor chip manufacturing method will be described as an example.
The method comprises the steps of exposing a wafer using an exposure apparatus and developing the wafer, and specifically comprises the following steps.
In step 1 (circuit design), a semiconductor device circuit is designed.
In step 2 (mask production), a mask is produced based on the designed circuit pattern.
In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon.
Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer using the mask and the wafer by the above exposure apparatus using the lithography technique.
Step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and an assembly process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including.
In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test.
Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 7 is a detailed flowchart of the wafer process in Step 4.
In step 11 (oxidation), the surface of the wafer is oxidized.
In step 12 (CVD), an insulating film is formed on the surface of the wafer.
In step 13 (electrode formation), an electrode is formed on the wafer.
In step 14 (ion implantation), ions are implanted into the wafer.
In step 15 (resist process), a photosensitive agent is applied to the wafer.
Step 16 (exposure) uses the exposure apparatus to expose a circuit pattern on the mask onto the wafer.
In step 17 (development), the exposed wafer is developed.
In step 18 (etching), portions other than the developed resist image are removed.
In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed.
By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.

It is a typical block diagram of the Example of this invention. It is a block diagram of Example 1 of this invention. It is a block diagram of Example 2 of this invention. It is a block diagram of Example 3 of the present invention. It is a side view of the exposure apparatus which concerns on Example 4 of this invention. It is a flowchart for demonstrating manufacture of the device using an exposure apparatus. It is a detailed flowchart of the wafer process of step 4 of the flowchart shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1: Mask 1A: Mask protection surface 2: Mask cassette 2A: Mask cassette upper cover 2B: Mask cassette lower plate 2C: Mask holding part 2D: Seal part 2E: Ventilation mechanism 3: Decompression chamber 4: Mask cassette mounting part 5: Valve 6 : Pump 7: First temperature adjusting means 7A: First individual temperature adjusting means 8: Second temperature adjusting means 8A: Second individual temperature adjusting means 9: Third temperature adjusting means 10: Particle 11 : 1st temperature gradient 12: 2nd temperature gradient 13: Gate valve A 14: Gate valve B 15: Opening part 16: Mask cassette conveyance means 17: Control part 18: Pressure detection means 19: Exhaust means 20: Intake means 21: Filter 101: Excitation laser 102: Light source emitting part 102A: Light source 102B: Light source mirror 103: Exposure chamber 104: Exhaust means 10 A, 104B, 104C: decompression pump 105: exposure light introduction unit 105A, 105B, 105C, 105D: mirror 106: mask stage 106A: mask (original) 107: reduction projection mirror optical system 107A, 107B, 107C, 107D, 107E: Mirror 108: Wafer stage 108A: Wafer 109: Mask stage support 110: Optical system support 111: Wafer stage support 112: Mask stocker 113: Master transport chamber 113A: Cover opening mechanism 114: Master transport means 114A: Mask atmospheric transport means 114B: Mask transfer means 115: Mask alignment scope 115A: Mask alignment mark 116: Wafer stocker 117: Wafer vacuum transfer means 117A: Wafer atmospheric transfer means 117B: Wafer vacuum transfer Step 118: Holding portion 118A: Support pin 119: Shield 119A: First shield 119B: Second shield 120: Gate valve 120A, 120B, 120C, 120D, 120E: Gate valve 121: Moving means 121A: Drive Part 121B: Power transmission part 122: Temperature variable means 122A: First temperature variable means 122B: Second temperature variable means 122C: Third temperature variable means 123: Plate member 124: Load lock chamber (mask)
125: Load lock chamber (wafer) 126: SMIF indexer 127: SMIF pod 128: Cassette holding unit 129: Air supply means 129A: Filter 130: Control unit 131: Mask cassette 131A: Upper cassette lid 131B: Cassette lower pan 132: Pressure detection means

Claims (8)

A decompression chamber that is maintained in a decompressed state and into which the original is carried and processed;
A mask cassette composed of a plate portion that holds the original plate and a lid that covers the plate portion, and is transported together with the original plate into the decompression chamber;
A first temperature adjusting means provided in the dish part, wherein the temperature of the dish part is a first temperature lower than the temperature of the original plate;
And a second temperature adjusting unit that is provided in the lid and sets the temperature of the lid to a second temperature lower than the temperature of the original.   Third temperature adjusting means is provided on the inner wall of the decompression chamber, and the inner temperature of the inner wall is made lower than at least one of the first temperature and the second temperature by the third temperature adjusting means. The original transport apparatus according to claim 1, wherein: The dish part and the lid part are composed of a plurality of layers,
The first temperature adjusting means and the second temperature adjusting means each independently adjust the temperature of the plurality of layers of the dish portion and the lid portion, and the layer facing the original plate is adjusted to the layer of the original plate. The original conveying apparatus according to claim 2, wherein the temperature is lower than the temperature, and the layer facing the decompression chamber is higher than the third temperature.   The temperature gradient of the space temperature between the inner wall of the decompression chamber and the lid portion and between the inner wall of the decompression chamber and the dish portion is a position and shape that are 10 K / cm or more, respectively. Item 4. The master conveying apparatus according to any one of Items 1 to 3.   5. The position and shape according to claim 1, wherein the temperature gradient of the space temperature between the lid and the original plate and between the plate portion and the original plate is 10 K / cm or more, respectively. The original conveying apparatus in any one.   The original transport apparatus according to any one of claims 1 to 5, wherein an atmosphere in the decompression chamber is maintained at a pressure of 0.001 to 1000 Pa.   An exposure apparatus on which the original transport apparatus according to any one of claims 1 to 6 is mounted. Exposing the wafer using the exposure apparatus according to claim 7;
And a step of developing the wafer.

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