JP2006147638A - Exposure apparatus and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the attachment of particles to a reflection type reticle which is an original plate and to a wafer which is a substrate during transportation from the atmospheric environment to an exposure apparatus in a high vacuum state, in a semiconductor exposure apparatus which exposes a semiconductor substrate under the vacuum environment. <P>SOLUTION: The exposure apparatus includes a heating means which can heat the original plate or the substrate to a prescribed temperature in advance before carrying it to a load lock chamber, and a cooling means which can cool the original plate or the substrate to a prescribed temperature range after it is carried out of the load lock chamber. By heating the original plate or the substrate to the prescribed temperature in advance before carrying it to the load lock chamber, thermal migration force is generated in the particles which occur in the middle of transportation of the original plate or the substrate, resulting in suppression of attachment of the particles to the original plate or the substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an exposure apparatus related to a semiconductor exposure apparatus that exposes a semiconductor substrate in a vacuum environment, and a device manufacturing method, and in particular, to a reflective reticle on which a circuit pattern is drawn, and to expose the circuit pattern. The present invention relates to a method for reducing adhesion of particles generated when a wafer is transferred from an environment under atmospheric pressure into an exposure apparatus under high vacuum.

  Currently, with respect to the manufacture of semiconductor devices such as DRAMs, MPUs, etc., research and development has been energetically performed to realize devices having a line width of 0.1 μm or less according to design rules. As an exposure apparatus used in this generation, an exposure apparatus using extreme ultraviolet light (EUV) is considered promising.

  In the EUV exposure apparatus, since exposure in the atmosphere becomes impossible, exposure must be performed in a vacuum, and inevitably, the reticle as the original plate is carried in and out, and the wafer as the substrate is carried in and out. In this case, the load lock chamber is used.

  Taking a reticle as an example, the reticle load-lock chamber normally receives the reticle under atmospheric pressure, evacuates the chamber to a predetermined pressure, opens the exposure apparatus side door, and opens the reticle to the exposure apparatus side. And carry out exposure. When the reticle needs to be replaced, the reticle is carried out from the apparatus side, the door on the exposure apparatus side is closed, the load lock chamber is returned to atmospheric pressure, and the reticle is taken out.

  In the past, when the inside of the load lock is evacuated, there is a possibility that particles existing in the chamber are peeled off due to the generation of an air flow and adhere to the reticle pattern surface.

  In addition to particle adhesion in the load lock, particles may be generated by sliding or friction such as robot hand or gate valve operation before the reticle is transferred to the equipment chamber, and this may adhere to the reticle. was there.

  When particles adhere to the circuit pattern surface of the reticle in this way, in actual exposure, the particles are transferred to the exact same position for each shot. For this reason, there existed a problem that the yield of device manufacture and the reliability of a device fell significantly. When the reduction magnification of the projection optical system is 4: 1, if a 0.1 μm particle adheres to the wafer, it becomes 25 nm on the wafer, making it impossible to manufacture a device with a design rule of 0.1 μm. Accordingly, the particle size to be actually managed is further reduced to extremely fine particles of several tens of nm or less. Thus, it cannot be said that the nanometer-sized particles generated in the apparatus are sufficiently elucidated with respect to the generation and behavior, and countermeasures are difficult.

Conventionally, the following proposals have been made for particle adhesion on a reticle in the transport path to these exposure apparatuses. In other words, the reticle is stored in a dedicated transport container, transported along with the container, and the transport container is opened when the load lock chamber reaches a predetermined pressure or when it is transported from the load lock chamber into the exposure apparatus. Is the method. As a matter of course, this transfer container is provided with a filter or the like so that the gas in the container is exhausted when the load lock chamber is evacuated. With this method, particles generated in the transport path only adhere to the transport container, and particles do not adhere to the reticle inside, so the reticle can be transported to the stage in the apparatus while being kept clean. It is supposed to be. There are Patent Documents 1 to 7 as documents describing such techniques.
JP 2001-332606 A JP 2002-252162 A JP 2002-299225 A JP 2003-227898 A JP 2003-234282 A JP 2004-152843 A JP 2004-228114 A

  However, the conventional example described above has insufficient points in the following points.

  Although particle generation due to sliding and friction of load locks, mechanical parts, and friction in the transfer path can be prevented, no measures are taken if particles are present or generated in the transfer container. Therefore, particle adhesion occurs. Specifically, when the transport container is not sufficiently cleaned, particles remain, and thus, when the load lock is evacuated, an air flow is generated and adheres to the reticle pattern surface. Further, dust generation from a contact portion between the reticle in the transport container and the reticle support portion due to slight vibration during transport is also conceivable. Furthermore, when the reticle is taken in and out of the transport container, it is necessary to open and close the container, but there is a possibility of dust generation at that time.

  In addition, since the reticle is put into the transport container and transported as a whole, the transport system must have a mechanism for taking the reticle in and out of the transport container, which increases the size and cost of the transport system.

  Further, regarding the load lock chamber, since the chamber volume becomes large, when evacuating from atmospheric pressure (1E + 5 Pa) to high vacuum (1E-5 Pa), there is a problem that it takes time to evacuate and throughput decreases. . In particular, in the high vacuum region, the internal gas exhibits a state of molecular flow, and therefore gas molecules are not easily discharged and are likely to remain if they pass through a filter in the transfer container. In this case, there is a possibility that a pressure difference occurs between the inside and outside of the transport container and the desired pressure state cannot be maintained. Although it is conceivable to attach a pressure gauge so that the pressure difference can be monitored inside and outside the transfer container, since the transfer container is a moving object, implementation is extremely difficult.

  An object of the present invention is to solve the problem of particle adhesion occurring in the reticle transport path in this way with a simpler configuration than that of the prior art and without reducing the throughput. Although not described in detail, the object of the present invention is to solve the particle adhesion problem that occurs in the wafer transfer path by a method similar to that for the reticle.

  In order to solve the above-described problems, an exposure apparatus according to the present invention includes an exposure apparatus that exposes a pattern on an original onto a substrate, a heating unit that heats the original and / or the substrate to a first temperature, and the original And / or replacement means for replacing the atmosphere surrounding the substrate, and cooling means that is heated by the heating means and that cools the original and / or the substrate carried out of the replacement means to a second temperature. It is characterized by having.

  In addition, the exposure apparatus according to another aspect of the present invention provides a thermophoretic force to particles around the reticle by heating the reticle in advance before transporting the particle adhesion problem that occurs in the transport path of the reticle. It is characterized by suppressing the adhesion of particles with this force.

  According to the invention relating to the present application, it is possible to keep the reticle or wafer clean.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  First, before explaining the details of the present invention, an EUV exposure apparatus will be described as an example of a projection exposure apparatus to which the present invention is applied, and its configuration will be briefly described with reference to FIG.

  In the figure, reference numeral 1 denotes a wafer, 2 denotes a reflective reticle on which an electronic circuit pattern is formed, and 3 denotes a reticle stage for holding the reflective reticle and moving it roughly in the scanning direction. Reference numeral 5 denotes an optical system for projecting and exposing the reflected light from the reticle onto the wafer 1. Reference numeral 6 denotes a wafer stage which can hold a wafer and can move coarsely and finely in six axial directions, and its xy position is constantly monitored by a laser interferometer (not shown). Normally, the scanning operation of the reticle stage 3 and the wafer stage 6 is performed between the scanning speeds of the projection optical system, assuming that the reduction magnification of the projection optical system is 1 / β, the scanning speed of the reticle stage is Vr, and the scanning speed of the wafer stage is Vw. Are controlled synchronously so that the relationship of Vr / Vw = β is established.

  Next, a configuration related to the method for preventing particle adhesion of a reticle according to the present invention will be described. The description of the method for preventing particle adhesion to the wafer is omitted because the configuration is exactly the same as that of the reticle.

  Reference numeral 8 denotes a transfer hand for loading and unloading a reticle between a load lock chamber and a reticle stage 3 described later. Reference numeral 17 denotes a cooling unit for returning the heated reticle of the present invention to the standard temperature in the apparatus. Since exposure is performed under vacuum, these units are contained in the apparatus chamber 4, and 7 is a vacuum pump for evacuating the chamber. 15 is a load lock chamber, 9 is a vacuum pump for evacuating the inside of the load lock, 10 is a gas supply source for venting such as dry N2, dry air when returning the vacuum state in the load lock to atmospheric pressure, 11 is a device side gate valve for partitioning the device chamber and the load lock chamber, and 12 is an exchange chamber side gate valve for partitioning the load lock chamber and a reticle replacement chamber described later. A reticle exchange chamber 14 temporarily stores the reticle under atmospheric pressure, and exchanges the reticle for each necessary process. Reference numeral 16 denotes a heating unit capable of heating the reticle of the present invention to a predetermined temperature before loading the load lock. Reference numeral 13 denotes a transfer hand that loads and unloads wafers with the load lock.

  Next, details of the present invention will be described. Since the wafer particle adhesion prevention method is exactly the same as that of the reticle, it will be omitted, and the reticle adhesion prevention method will be described.

  As a reticle transfer procedure, the reticle in the reticle exchange chamber 14 is first carried into the load lock 15 under atmospheric pressure by the transfer hand 13. When the load lock side gate valve 12 is closed and the load lock is in a sealed state, the valve of the vacuum exhaust system 9 is opened and evacuation is started. When a predetermined pressure is reached after several tens of seconds, the apparatus-side gate valve 11 is opened, and the reticle is transferred from the load lock 15 to the reticle stage 6 by the transfer hand 8 and held. The above is a series of procedures for conveying the reticle.

  The essence of the present invention is that the reticle temperature is always kept higher than the surrounding gas by a predetermined temperature or higher in the transport path, thereby generating a thermophoretic force on particles generated in the transport path and floating around the reticle. In other words, particle adhesion is suppressed. Therefore, as the exposure apparatus, a heating unit that heats the reticle to a predetermined temperature before the reticle is conveyed, and a reference temperature in the exposure apparatus after the conveyance, that is, in the exposure chamber (the reference temperature is closer to the specifications of the exposure apparatus). This is a requirement of the temperature of the exposure apparatus necessary for exhibiting performance, and is often set between 22.5 degrees Celsius and 23.5 degrees Celsius for EUV exposure apparatuses and the like. Particle adhesion suppression can be realized by an extremely simple method requiring only means.

  The principle of thermophoresis is that when an object is heated, a temperature gradient occurs in the gas near the surface, and when particles are present, the particles move from the vicinity of the object where the thermal motion of gas molecules is large to the surrounding region where the thermal motion is small. It receives power in the direction. In general, this force is expressed as:

Here, ∇T the temperature gradient of the spatial, T ₀ is the gas mean temperature of particles near. The thermophoretic coefficient K depends on the Knudsen number Kn (= 2λ / Dp) (Dp is the particle diameter), the ratio of the thermal conductivity of the gas to the particle, and the physical properties of the gas. Therefore, the heating temperature of the reticle may be set to a temperature at which the reticle adhesion probability is minimized when the reticle is actually conveyed. However, as a rough guide, it is expected to be in the range of several to 50 ° C.

  As described above, the heating means is preferably provided in the reticle exchange chamber. As a specific method, a method of heating with a single sheet by a heater unit or a method of placing a reticle in a thermostatic box can be considered. This will be described with reference to FIGS.

  FIG. 2 shows a case where the heater unit 16 is provided in the reticle exchange chamber. Any type of heater may be used, but the figure assumes a lamp unit by infrared irradiation. When an infrared lamp is used, particle adhesion does not occur because heating is possible without contact. Further, since the high-output infrared ray can be irradiated, the reticle can be heated in a short time. In this case, the temperature control of the reticle does not require a highly accurate function and can be reproduced with good reproducibility by controlling the output and the irradiation time.

  FIG. 3 shows a case where the reticle constant temperature box 20 is provided in the reticle exchange chamber. By always storing the reticle in a constant temperature box maintained at a desired temperature, the reticle can be immediately put into the conveyance path. In this case, as shown in the figure, it is desirable from the viewpoint of throughput that the thermostatic box keeps a plurality of reticles at the same time.

  Next, a cooling means for cooling the reticle to the reference temperature in the exposure apparatus after the reticle conveyance, that is, in the exposure apparatus chamber will be described with reference to FIG. When the reticle is transported to the exposure apparatus chamber, it is in a state where the temperature is several to 50 ° C. higher than the reference temperature.

  The reticle can be cooled in a non-contact manner. As shown in FIG. 4, with the reticle placed on the transfer hand, the raising / lowering function of the transfer hand is used to bring the reticle close to the cooling radiation plate 21 and cool it in a non-contact manner. The cooling radiating plate 21 may have various configurations such as those using a Peltier element as a cooling heat source and those in which a refrigerant is flowed. The advantage of this method is that the particles can be prevented from adhering by cooling in a non-contact manner. Further, as a target temperature range for cooling the reticle, since the reticle base material is an ultra-low thermal expansion glass called zero-dur, the expansion coefficient is 50 ppb / ° C., and the allowable magnification variation on the reticle surface is 10 nm. It is expected to be around ± 1 ° C with respect to the reference temperature.

  Therefore, there is no need for highly accurate temperature control as a method for controlling the temperature of the reticle. The reticle temperature is controlled while the surface temperature of the cooling radiation plate is set lower than the device reference temperature and the temperature of the reticle is monitored. It is sufficient to move the hand away from the radiation plate when it falls within a predetermined temperature range near the reference temperature. Alternatively, the temperature of the radiation plate is maintained at the apparatus reference temperature, and after a predetermined time has passed since the reticle was brought close to the apparatus, that is, after entering the predetermined temperature range, it is separated from the radiation plate. In any case, regarding the method of cooling the reticle, it is desirable to select an optimal control means from the balance between the specifications of the apparatus and the heating temperature of the reticle.

  Next, temperature fluctuations according to the reticle transport procedure will be described with reference to FIG. First, the reticle in the reticle exchange chamber is placed on the heating port of the reticle heating unit by the transfer hand. In this state, infrared rays are irradiated by heating means such as an infrared lamp unit. Since the heating temperature is in the range of several degrees C. to about 50 degrees C. at which the thermophoretic force acts effectively as described above, the reticle temperature fluctuation is as shown in FIG. As a matter of course, when the reticle heating means is a constant temperature box, such temperature fluctuation does not occur and the temperature remains constant. On the other hand, since the temperature around the reticle is around the reference temperature T0 of the apparatus, there is a temperature distribution in the vicinity of the reticle, and the thermophoretic force acts. Therefore, even if particles float in the reticle exchange chamber, It cannot be done and adhesion is suppressed.

  Then, the reticle that has reached a predetermined temperature is carried into a load lock under atmospheric pressure, and when the load lock side gate valve is closed, the vacuum exhaust system valve is opened and evacuation is started. In the process of evacuating the load lock, the internal gas is rapidly cooled by adiabatic expansion. When evacuation starts, the gas temperature rapidly decreases from the apparatus reference temperature T0 as shown in FIG. 5, and after several tens of seconds, the temperature decreases by several tens of degrees from T0, depending on the chamber volume, the exhaust speed, etc. Thereafter, it rapidly approaches T0 due to heat transfer from the chamber wall having a large heat capacity. On the other hand, a reticle having a large heat capacity with respect to a gas has a temperature decrease with a time constant longer than that of the gas, and a temperature decrease within 1 ° C. As described above, in the load lock, although the reticle temperature is slightly lowered, the gas temperature is further lowered. Therefore, a temperature gradient is always generated in the vicinity of the reticle.

  Conventionally, when the inside of the load lock is evacuated, particles existing in the chamber may be peeled off and detached due to the generation of an air flow, and may adhere to the reticle pattern surface. Since a temperature gradient always occurs during exhaust, due to the thermophoretic force caused by this, particles cannot easily approach the reticle, and the pattern surface is always kept clean.

  Several tens of seconds after the start of evacuation, when a predetermined pressure is reached, the apparatus side gate valve is opened, and the reticle is moved from the load lock to the reticle cooling port by the transfer hand in the apparatus chamber. The purpose of the cooling port is to bring the temperature of the reticle to the apparatus reference temperature T0. At the time of cooling, when the transport hand is driven upward and the reticle approaches the cooling plate, the temperature rapidly decreases as shown in FIG. 5 and approaches the apparatus reference temperature T0.

  The reticle temperature falls within a range of an allowable temperature T0 ± α ° C., which is a difference from the apparatus reference temperature T0, after a predetermined time has passed after approaching the cooling plate. As described above, this temperature α ° C. is expected to be around 1 ° C. when the reticle expansion coefficient is 50 ppb and the allowable magnification fluctuation on the reticle surface is 10 nm. Thus, after a predetermined time has passed after the proximity, the reticle is transported and held on the reticle stage by the transport hand, and the exposure operation is started. The above is the temperature variation according to the reticle transport procedure.

  The present invention is also effective for the above-described conventional method in which the reticle is stored in a dedicated transport container and transported along with the container. In other words, in the conventional example, the reticle temperature is not limited to the surrounding gas temperature even in the case of friction between the reticle and the holding member in the transfer container, opening / closing of the transfer container, and evacuation of the transfer container. It is heated to such an extent that the thermophoretic force works effectively. Therefore, the particles do not easily adhere to the reticle, and the particles can always be kept clean even in the transport container.

  As described above, by providing heating means before reticle conveyance and providing cooling means after reticle conveyance, the reticle can always maintain a predetermined temperature or higher in the conveyance path, particularly in the load lock chamber. It is possible to always generate thermophoretic force on the particles around the reticle, and to suppress adhesion to the reticle pattern surface with this force. And after conveyance, it can cool to apparatus reference temperature quickly by a reticle cooling means.

  Although detailed explanation is omitted, the thermophoretic force is always generated on the particles around the wafer, and the adhesion to the wafer exposure surface is suppressed with this force by using the same method. Is possible. After the transfer, the wafer can be quickly cooled to the apparatus reference temperature by the wafer cooling means.

  Further, the embodiments of the exposure apparatus described above can also be applied to a device manufacturing method. That is, a device manufacturing method including a step of exposing a substrate such as a wafer using the exposure apparatus as described above, a step of developing the exposed substrate, a step of performing post-processing on the developed substrate, etc. is also implemented. Part of the example.

  Here, the above embodiments can be summarized as follows. The exposure apparatus according to the present embodiment is an exposure apparatus that exposes a pattern on an original onto a substrate, and includes a heating unit that heats the original and / or the substrate to a first temperature, and the original and / or the substrate. Substitution means for substituting the atmosphere, and cooling means that is heated by the heating means and that cools the original and / or the substrate carried out from the substitution means to a second temperature.

  Here, by heating the original and / or the substrate using the heating means, a thermophoretic force is generated in particles generated in the transport path of the original and / or the substrate. As a result, the particles are prevented from adhering to the original plate or the substrate, or even if adhering, the adhering amount is reduced (reducing the adhering amount includes eliminating the adhering amount). Here, the original and / or the substrate is heated by the heating means before being carried into the replacement means. The cooling means is housed in the same space as the substrate stage on which the substrate is placed.

  Here, when the reference temperature of the exposure apparatus is T degrees, the first temperature is not less than (T + 5) degrees and not more than (T + 50) degrees. Preferably, the first temperature is not less than (T + 10) degrees and not more than (T + 50) degrees. Further, when the reference temperature of the exposure apparatus is T degrees, the second temperature is not less than (T-5) degrees and not more than (T + 5) degrees. Preferably, the second temperature is not less than (T-2) degrees and not more than (T + 2) degrees. Here, the difference between the reference temperature of the exposure apparatus and the second temperature is calculated based on the thermal expansion coefficient of the base material of the original and / or the substrate and the magnification fluctuation amount allowed in the exposure apparatus. Is done.

  Further, the exposure apparatus and the particle removal method of this embodiment have a load lock mechanism, and in the exposure apparatus that exposes a circuit pattern on the original on the substrate in a vacuum environment, the original and / or the substrate is loaded. Heating means capable of heating to a predetermined temperature in advance before being transferred to the lock chamber, and cooling means capable of cooling the original and / or the substrate to a predetermined temperature range after unloading from the load lock chamber. And, by heating the original and / or the substrate to a predetermined temperature before carrying the load-lock, a thermophoretic force is applied to particles generated in the original and / or substrate transfer path. And particle adhesion to the original and / or the substrate is suppressed. Here, the predetermined heating temperature of the original plate or the substrate is a high temperature within a range of several degrees C. (3 degrees to 9 degrees) to 50 degrees C. with respect to the exposure apparatus reference temperature.

  Further, the predetermined cooling temperature range of the original and / or the substrate is a temperature range calculated from a thermal expansion coefficient of the original or the base material of the substrate and an allowable magnification variation with respect to an exposure apparatus reference temperature. .

  In addition, the device manufacturing method of this embodiment includes a step of exposing the substrate using the exposure apparatus described above, and a step of developing the exposed substrate.

  As described above, according to the present embodiment, the reticle, which is the original plate, or the wafer, which is the substrate, is heated in advance to a temperature that is several to 50 ° C. higher than the reference temperature of the apparatus before the transfer. Alternatively, it is possible to always generate a thermophoretic force on the surrounding particles during wafer transfer, and this force can suppress adhesion and keep the reticle or wafer clean. Further, even if a heated reticle or wafer is carried into the apparatus, the present invention does not cause any problems by having means capable of effectively cooling to the apparatus reference temperature. Thus, the exposure operation can be performed.

Exposure apparatus system to which the present invention is applied The figure which shows the reticle exchange chamber and reticle heating unit of this invention The figure which shows the reticle exchange chamber of this invention, and the constant temperature box for reticle heating The figure which shows the reticle cooling means by a part of apparatus chamber of this invention, and a non-contact method Diagram showing temperature fluctuations associated with reticle transport

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafer 2 Reticle 3 Reticle stage 4 Apparatus chamber 5 Projection optical system 6 Wafer stage 7 Apparatus chamber vacuum pump 8 Conveyance hand 9 Load lock chamber vacuum pump 10 Gas supply source 11 Apparatus side gate valve 12 Load lock side gate valve 13 Conveyance hand 14 Reticle exchange chamber 16 Reticle heating unit (heater unit)
17 Reticle cooling unit

Claims (13)

In an exposure apparatus that exposes a pattern on an original on a substrate,
Heating means for heating the original plate and / or the substrate to a first temperature;
Replacement means for replacing the atmosphere surrounding the original and / or the substrate;
An exposure apparatus comprising: a cooling unit that is heated by the heating unit and that cools the original and / or the substrate carried out from the replacement unit to a second temperature.   The thermophoretic force is generated in particles generated in a transport path of the original and / or the substrate by heating the original and / or the substrate using the heating means. Exposure equipment.   3. The exposure apparatus according to claim 1, wherein the original plate and / or the substrate is heated by the heating unit before being carried into the replacement unit.   4. The exposure apparatus according to claim 1, wherein the cooling unit is housed in the same space as the substrate stage on which the substrate is placed.   5. The exposure apparatus according to claim 1, wherein when the reference temperature of the exposure apparatus is T degrees, the first temperature is not less than (T + 5) degrees and not more than (T + 50) degrees.   6. The exposure apparatus according to claim 5, wherein the first temperature is not less than (T + 10) degrees and not more than (T + 50) degrees.   7. The exposure apparatus according to claim 1, wherein when the reference temperature of the exposure apparatus is T degrees, the second temperature is not less than (T-5) degrees and not more than (T + 5) degrees. .   The exposure apparatus according to claim 7, wherein the second temperature is not less than (T−2) degrees and not more than (T + 2) degrees.   The difference between the reference temperature of the exposure apparatus and the second temperature is calculated based on the thermal expansion coefficient of the original plate and / or the base material of the substrate and the magnification variation allowed in the exposure apparatus. An exposure apparatus according to any one of claims 1 to 8. In an exposure apparatus that has a load lock mechanism and exposes a circuit pattern on an original on a substrate in a vacuum environment,
Heating means capable of heating the original and / or the substrate to a predetermined temperature in advance before being transferred to the load lock chamber;
Cooling means capable of cooling the original and / or the substrate to a predetermined temperature range after unloading from the load lock chamber;
By heating the original and / or the substrate to a predetermined temperature in advance before transporting the load lock, a thermophoretic force is generated on particles generated in the transport path of the original and / or the substrate, and the original and An exposure apparatus that suppresses particle adhesion to the substrate.   11. The exposure apparatus according to claim 10, wherein the predetermined heating temperature of the original plate or the substrate is a high temperature within a range of 3 ° C. to 50 ° C. with respect to an exposure apparatus reference temperature.   The predetermined cooling temperature range of the original plate and / or the substrate is a temperature range calculated from a thermal expansion coefficient of the original material of the original plate or the substrate and an allowable magnification variation with respect to an exposure apparatus reference temperature. 12. The exposure apparatus according to claim 10, wherein the exposure apparatus is characterized.   13. A device manufacturing method comprising: exposing the substrate using the exposure apparatus according to claim 1; and developing the exposed substrate.

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