JP2009076582A - Exposure device, exposure method, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure device, an exposure method and a device manufacturing method by which productivity can be improved. <P>SOLUTION: Disclosed is an object processing system equipped with a first processor performing first process on an object and a second processor performing second processing on the object and transferring the object between the first processor and second processor, the object processing system including a communication device which connects the first processor and second processor to each other and communicating information between the first processor and second processor and a control unit allowing the second processor to perform predetermined processing based upon unreceivable state information indicating that the first processor is unable to receive the object from the second processor. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method.

In the manufacturing process of an object such as an electronic component, processing using a plurality of processing apparatuses may be performed. As an example of a manufacturing process of an electronic component that is processed using such a plurality of processing apparatuses, in a lithography process of a semiconductor wafer (hereinafter referred to as “wafer”), for example, a photosensitive material such as a resist on a substrate (object) In some cases, an in-line lithography system in which a coater / developer apparatus (hereinafter referred to as C / D apparatus) having a function of applying a film and a function of developing a substrate after exposure is connected in-line to the exposure apparatus may be used (for example, Patent Documents). 1). In the in-line lithography system, coating processing, exposure processing, and development processing can be performed continuously, so that efficient processing is possible.
JP 2005-244232 A

  However, in such an inline lithography system, it may be impossible to supply the substrate from the exposure apparatus due to an unexpected failure in the C / D apparatus. In the exposure apparatus, the C / D apparatus may be in a standby state until the substrate can be supplied. As a result, the productivity may be reduced.

  The present invention has been made in view of the above points, and an object thereof is to provide an exposure apparatus, an exposure method, and a device manufacturing method capable of improving productivity.

  In order to achieve the above object, the present invention adopts the following configuration corresponding to FIGS. 1 to 6 showing the embodiment.

  An exposure apparatus (10) according to the present invention is an exposure apparatus that performs an exposure process on a substrate (W) and delivers the exposed substrate to a predetermined apparatus (50). And a control device (120) for performing a predetermined process inside the apparatus based on the non-receivable information that the board is unreceivable.

  According to the present invention, when the non-receivable information indicating that the substrate cannot be received is notified, the control device (120) causes the apparatus to perform a predetermined process based on the non-receivable information. For this reason, time until it becomes a state which can receive a board | substrate will be utilized effectively, and it will contribute to the improvement of productivity.

  An exposure method according to the present invention is an exposure method in which an exposure process is performed on a substrate (W) by an exposure apparatus (10), and is based on unacceptable information that the substrate from the exposure apparatus is unreceivable. And a processing step for performing a predetermined process in the exposure apparatus.

  According to the present invention, when the unacceptable information indicating that the substrate (W) is unreceivable is notified, a predetermined process is performed in the exposure apparatus (10) based on the unreceivable information. For this reason, time until it becomes a state which can receive a board | substrate will be utilized effectively, and it will contribute to the improvement of productivity.

The device manufacturing method according to the present invention is characterized by using the exposure method described above.
Therefore, in the device manufacturing method of the present invention, a device is manufactured using an object processing method or an exposure method that contributes to an improvement in productivity, so that a high-quality device can be manufactured with a high throughput.

  In order to explain the present invention in an easy-to-understand manner, the description has been made in association with the reference numerals of the drawings showing one embodiment, but it goes without saying that the present invention is not limited to the embodiment.

  In the present invention, productivity can be improved.

  Embodiments of the exposure apparatus, exposure method, and device manufacturing method of the present invention will be described below with reference to FIGS.

  In each embodiment, a case will be described in which a coater / developer apparatus (hereinafter referred to as “C / D apparatus”) is used as the first processing apparatus constituting the object processing system, and an exposure apparatus is used as the second processing apparatus. Note that the C / D apparatus is an apparatus that performs a photosensitive material coating process on a semiconductor wafer (object, substrate) for manufacturing a semiconductor device as a first process and a developing process on the wafer that has been subjected to the exposure process. The exposure apparatus is an apparatus that performs an exposure process as a second process on the wafer transferred from the C / D apparatus. In each drawing used for the following description, the scale of each member is appropriately changed in order to make each member a recognizable size.

[First Embodiment]
A first embodiment of the present invention will be described. FIG. 1 is a plan view showing the configuration of a lithography system according to the first embodiment configured to include an exposure apparatus and a C / D apparatus according to the present invention.

  A lithography system (object processing system) 100 shown in FIG. 1 is installed in a clean room. The lithography system 100 includes an exposure apparatus (second processing apparatus) 10 installed on the floor surface of a clean room, and an inline interface unit (hereinafter, referred to as “left side” in FIG. 1) of the exposure apparatus 10. And a C / D device 50 serving as a first processing device connected via a 110) (referred to as an “inline I / F unit”).

  The exposure apparatus 10 includes a chamber 16 in which a partition wall 14 is provided at a position slightly closer to the center in the Y-axis direction in FIG. 1 and the X-axis direction on one side defined by the partition wall 14 inside the chamber 16 ( -X side) is divided by an exposure apparatus main body 10A (not shown in FIG. 1 except for the wafer stage WST and projection optical system PL) and a partition wall 14 inside the chamber 16 accommodated in the large room 12A. In addition, a wafer loader system 40 as a substrate transfer system in which most of the small chamber 12B on the other side in the X-axis direction (+ X side) is accommodated is provided. The wafer loader system 40 includes transfer arms H1 to H4, a Y guide 18 extending in the Y-axis direction, and an X guide 20 positioned above the Y guide 18 (front side in FIG. 1) and extending in the X-axis direction. As a conveyance guide. A laser apparatus 1 as a light source disposed outside the chamber 16 is connected to the exposure apparatus main body 10A via a routing optical system BMU.

  FIG. 2 schematically shows the configuration of the exposure apparatus 10 in a front view. However, in FIG. 2, the chamber 16 is indicated by a virtual line (two-dot chain line). The exposure apparatus 10 is a step-and-scan type scanning projection exposure apparatus, that is, a so-called scanner (also called a scanning stepper).

  The exposure apparatus 10 projects an illumination optical system ILU that illuminates the reticle R with exposure light IL, a reticle stage RST that can move while holding the reticle R, and exposure light IL emitted from the reticle R onto the wafer W. A projection optical system PL, a wafer stage WST that is movable while holding the wafer W, and a main body column CL that holds the projection optical system PL and the like and is mounted with the wafer stage WST. The main control device 120 and the like for overall control.

  The illumination optical system ILU is an optical system that illuminates the reticle R supported by the reticle stage RST with the exposure light IL. The illumination optical system ILU is a variable that sets the illumination area by the exposure light IL on the optical integrator, condenser lens, relay lens system, and reticle R to equalize the illuminance of the exposure light IL emitted from the laser device 1 in a slit shape. A field stop or the like (both not shown) is provided, and a predetermined illumination area on the reticle R can be illuminated with the exposure light IL having a more uniform illuminance distribution. The exposure light IL emitted from the laser device 1 includes, for example, ultraviolet emission lines (g-line, h-line, i-line) emitted from a mercury lamp, KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength). Ultraviolet light such as 193 nm) is used.

  Reticle stage RST is a stage device that supports reticle R and performs two-dimensional movement and fine rotation in a plane perpendicular to optical axis AX of projection optical system PL. The position and rotation angle of the reticle R on the reticle stage RST in the two-dimensional direction are measured in real time by the laser interferometer 13, and the measurement result is output to the main controller 120. A movable mirror 15 that reflects the laser beam from the laser interferometer 13 is provided on the reticle stage RST. The reticle stage RST is provided with a linear motor (not shown), and the main controller 120 drives the linear motor based on the measurement result of the laser interferometer 13 so that the reticle stage RST is supported by the reticle stage RST. The reticle R is positioned.

  The projection optical system PL is an optical system that projects and exposes a pattern formed on the reticle R onto the wafer W at a predetermined projection magnification, and has a configuration in which a plurality of optical elements are accommodated in a lens barrel. In the present embodiment, the projection optical system PL is a reduction system having a projection magnification β of, for example, 1/4 or 1/5. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. The lens barrel of the projection optical system PL is provided with a flange FLG, and the projection optical system PL is supported by the lens barrel surface plate 138 via the flange FLG.

  Wafer stage WST includes XY stage 141 that is freely driven along the upper surface of stage base SB within an XY two-dimensional plane (including θz rotation) by a drive system (not shown) such as a linear motor or a planar motor, and XY And a wafer table TB mounted on a stage 141. The stage base SB is supported on the floor surface via a vibration isolation unit (not shown). A movable mirror 27 that reflects the laser beam from the laser interferometer 31 is fixed on the wafer table TB. The position in the XY plane of the wafer table TB is always detected by the laser interferometer 31. The position information of the wafer table TB is sent to the main controller 120, and the main controller 120 controls the wafer table TB based on the position information.

  Returning to FIG. 1, the wafer loader system 40 transports a Y guide 18 extending in the Y-axis direction and an X guide 20 positioned above the Y guide 18 (front side in FIG. 1) and extending in the X-axis direction. It is provided as a guide. A horizontal articulated robot 26 that moves along the Y guide 18 is provided on the Y guide 18. The X guide 20 is provided with a load arm 28 and an unload arm 30 that move along the X guide 20. The partition wall 14 has openings through which the load arm 28 and the unload arm 30 can pass. Furthermore, a turntable 37 in which a wafer edge sensor (not shown) is arranged in the vicinity is provided at a position on the −Y side in the vicinity of the + X side end of the X guide 20. Also, in the loader chamber 12B, each part of the wafer loader system 40 is controlled, and information exchange, that is, communication with respect to the wafer being transferred is performed with a C / D-side control device described later via a communication line. A loader control device 34 is provided. A recovery unit 36 that can recover the wafer W and transport it to the outside of the exposure apparatus 10 is provided along the Y guide 18.

  The inline I / F unit 110 includes an inline delivery unit 114, a carrier table 118, a horizontal articulated robot 116, and the like.

FIG. 3 is a plan view showing a schematic configuration of the C / D device 50. As shown in the figure, the C / D device 50 has a configuration in which a cassette station 30, a processing station 31, and an interface unit 32 are integrally connected.
The cassette station 30 has a configuration in which a plurality of wafer cassettes CR are placed in a line in the X direction at the position of the protrusion 21a on the cassette placing table 21 with the respective wafer entrances and entrances facing the processing station 31 side. A wafer transfer body 22 movable in the arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. Further, the wafer transfer body 22 is configured to be rotatable in the θ direction.

  The processing station 31 includes a processing unit unit G3, a processing unit unit G4, and a processing unit unit G5 arranged from the cassette station 30 side on the back side of the apparatus (upper side in the drawing), and the processing unit unit G3 and the processing unit unit G4. Between the two, a main wafer transfer unit A1 is provided. The main wafer transfer unit A1 is installed so that the robot arm 68a can selectively access the processing unit unit G1, the processing unit unit G3, the processing unit unit G4, and the like. In addition, a main wafer transfer unit A2 is provided between the processing unit unit G4 and the processing unit unit G5. The main wafer transfer unit A2 includes a processing unit unit G2, a processing unit unit G4, and a processing unit unit G5. It is installed so that it can be selectively accessed.

  A heat treatment unit is installed on the back side of the main wafer transfer unit A1, for example, an adhesion unit (AD) 110 for hydrophobizing the wafer W and a heating unit (HP) 113 for heating the wafer W are provided below. Multiple layers are stacked in order. The adhesion unit (AD) may further include a mechanism for adjusting the temperature of the wafer W. On the back side of the main wafer transfer unit A2, a peripheral exposure device (WEE) 120 that selectively exposes only the edge portion of the wafer W and an inspection device that inspects the resist film thickness applied to the wafer W are provided. . These peripheral exposure apparatuses (WEE) 120 and inspection apparatuses may be arranged in multiple stages.

  In the processing unit G3, an oven-type processing unit that performs predetermined processing by placing the wafer W on a mounting table, for example, a high-temperature heat processing unit that is a first heat processing unit that performs predetermined heat processing on the wafer W, A high-precision temperature control unit that performs heat treatment with high-precision temperature management, a transition unit that serves as a transfer unit of the wafer W from the wafer transfer body 22 to the robot arm 68a, and a temperature control unit are stacked in order from the top. In the processing unit G4, for example, a post-baking unit as a heat treatment unit, a pre-baking unit for performing heat treatment on the resist-coated wafer W, and a high-precision temperature control unit are stacked in order from the top. In the processing unit part G5, for example, a post-exposure baking unit (PE baking unit) that heat-processes the wafer W after exposure and a high-precision temperature control unit are stacked in order from the top, for example.

  A processing unit part G1 and a processing unit part G2 are provided side by side in the Y direction on the apparatus front side of the processing station 31 (downward in the drawing). Between the processing unit part G1 and the cassette station 30 and between the processing unit part G2 and the interface part 32, liquid temperature control used for temperature control of the processing liquid supplied to the processing unit parts G1 and G2. Pumps 24 and 25 are provided, respectively, and ducts D1 and D2 are provided for supplying clean air from an air conditioner (not shown) provided outside the processing system into the processing units G1 to G5. ing.

  In the processing unit G1, a resist coating unit that performs predetermined processing by placing the semiconductor wafer W on a spin chuck in the cup CP, and a bottom coating unit that forms an antireflection film to prevent reflection of light during exposure are provided below. Are stacked in order. In the processing unit section G2, for example, a plurality of development units are stacked in order from below.

  A coating / developing control device 62 for controlling the entire system of the C / D device 50 is provided below the cassette station 30.

  A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front part of the interface part 32, and a robot arm 47 is provided in the center part. The robot arm 47 moves in the X and Z directions to access both cassettes CR and BR and can access the inline I / F unit 110.

  In the present embodiment, the loader control device 34 on the exposure apparatus 10 side and the coating / development control device 62 of the C / D device 50, and between the main control device 120 and the coating / development control device 62, respectively. Data communication is possible via each connected communication device CS. In this case, information relating to the wafer being transferred is mainly exchanged between the loader control device 34 and the coating / developing control device 62. Various information such as information relating to the supply of the wafer W between the exposure apparatus 10 and the C / D apparatus 50 is exchanged between the main controller 120 and the coating / development controller 62.

  In the present embodiment, the display device 200 is connected to the main control device 120 of the exposure apparatus 10. The display device 200 can display the processing status in the exposure apparatus 10 and the processing status in the C / D device 50. Information on the processing status in the exposure apparatus 10 is supplied to the display device 200 via the main control device 120, for example. Information on the processing status in the C / D device 50 is supplied from the coating / developing control device 62 to the display device 200 via the communication device CS and the main control device 120, for example. The display device 200 may be connected to the coating / development control device 62, or may be connected to both the main control device 120 and the coating / development control device 62. Further, only one of the processing status in the exposure apparatus 10 and the processing status in the C / D apparatus 50 may be displayed.

Next, a wafer processing operation by the lithography system 100 will be described.
Here, it is assumed that the first wafer W as a substrate (object) is mounted on the cassette mounting table 21. Therefore, the robot 22 carries the wafer W from the cassette mounting table 21 into, for example, the processing unit G1. Application of resist (photosensitive material) is started in the resist application unit of the processing unit G1. When the resist coating of the wafer W is completed, the robot 68a moves the wafer W from the resist coating unit to the post bake unit, and performs a post baking process.

  After the post-baking wafer W is cooled to a temperature set within a range of 20 to 25 ° C., for example, the wafer W is transferred to the robot 116 via the robot 68b and the robot 47, and inline by the robot 116. It is placed on the supply table 114A of the delivery unit 114.

  On the other hand, on the exposure apparatus 10 side, first, the robot 26 receives the wafer W from the inline delivery unit 114 and places it on the turntable 37. Here, the wafer edge is detected by the wafer edge sensor, and the turntable 37 is rotated by the loader control device 34 based on the detection signal so that the direction of the notch portion of the wafer W is adjusted to a predetermined direction. Thereafter, the load arm 28 receives the wafer W on the turntable 37, moves along the X guide 20, and carries it to the wafer stage WST.

  For wafer W transferred onto wafer stage WST, an operation for positioning reticle R (reticle stage RST) and wafer W (wafer stage WST) to a scanning start position for exposure of each shot area, and reticle The slit-shaped illumination area on the reticle R is illuminated with exposure illumination light while the R and the wafer W are moved synchronously, and the pattern of the reticle R is sequentially applied to each shot area on the wafer W via the projection optical system PL. The exposure process is performed by repeating the scanning exposure operation for transferring. When the exposure process is completed, the unload arm 30 receives the exposed wafer W and passes it to the robot 26. Then, the wafer W is transferred by the robot 26 and transferred to the inline transfer unit 114.

  Thereafter, the exposed wafer W is transferred from the collection table 114B to the robot 47 by the robot 116, and is further carried into the PE baking unit of the processing unit G5 by the robot 47 and the robot 68b, and is posted in the PE baking unit. An exposure bake (PEB) is performed.

On the other hand, the wafer W for which PEB has been completed is taken out of the PE baking unit by the robot 68b, and is carried into, for example, the developing unit of the processing unit G4 and developed. The developed wafer W is placed on the cassette placing table 21 via the robot 68a and the robot 22.
In this way, a series of processes in the lithography system 100 is completed.

  Incidentally, in the C / D device 50 described above, some error may occur in the coating process or the developing process. Examples of the errors related to the coating process and the development process include malfunctions and inoperability of the processing units G1 to G5, malfunctions and malfunctions of the robots 68a and 68b, and the like. When such an error occurs and the C / D apparatus 50 cannot receive the wafer W from the exposure apparatus 10, a waiting time is generated in the exposure apparatus 10 until the error is cleared.

  Therefore, in this embodiment, when the C / D apparatus 50 cannot receive the wafer W from the exposure apparatus 10, the coating / development control apparatus 62 detects this state and receives the wafer W from the exposure apparatus 10. Information indicating that reception is impossible is transmitted to main controller 120 via communication device CS.

  The main control device 120 that has received the unacceptable information from the coating / development control device 62 causes the exposure apparatus 10 to collect the wafer W as a predetermined process based on the information (processing step). In the processing step, the wafer W before exposure processing or the wafer W after exposure processing is recovered by the recovery device 36. In this case, the wafer W in the exposure apparatus 10 is transferred to the collection apparatus 36 by the robot 26, and the wafer W is transferred to the outside of the exposure apparatus 10 by the collection apparatus 36. For the collected wafer W, for example, the resist on the surface may be washed, and the resist may be applied again by the C / D apparatus 50.

  Further, after collecting the wafer W, the main controller 120 notifies the application / development controller 62 of the C / D apparatus 50 of wafer collection information that the wafer W has been collected in the exposure apparatus 10 (second notification step). The coating / developing control device 62 can control the coating / developing processing after the error is canceled based on the wafer collection information received via the communication device CS. Accordingly, the C / D apparatus 50 can recognize that the wafer W has been collected by the exposure apparatus 10 and can prevent a so-called waiting state in which the wafer W is supplied from the exposure apparatus 10. .

  Further, after the collection of the wafer W and the transmission of the wafer collection information, an exposure related process may be performed as a predetermined process. The exposure-related processing is, for example, exposure processing for maintaining the performance of the apparatus such as maintenance of each part of the exposure apparatus 10 constituting the lithography system 100 in order to smoothly perform processing operations on the wafer W over a long period of time. This is a related process that is necessary for maintaining the performance of the device, such as maintenance (including parts replacement, etc. in addition to periodic maintenance and other maintenance), and self-calibration. Includes all operations that need to be stopped.

  Specific examples include image formation characteristic adjustment (lens calibration, focus calibration) of projection optical system PL, illuminance adjustment (illuminance calibration), the center of reticle R (the optical axis of projection optical system PL) and alignment system ALG. Measurement of a baseline that is a distance from the measurement center (field center), replacement of a gas that is a laser material of the laser apparatus 1, and immersion exposure in which the exposure apparatus main body 10A forms a pattern via an optical system and a liquid. In some cases, liquid exchange or the like can be mentioned.

  Further, when it is determined that the waiting time does not occur or the waiting time is extremely short even when the normal exposure process is performed, such as when the error of the C / D device 50 is solved in a short time. The wafer W may be continuously exposed as a predetermined process without collecting the wafer W.

  A series of wafer processing operations by the lithography system 100 including the notification step and the processing step are performed while displaying the processing status in the exposure apparatus 10 and the processing status in the C / D apparatus 50 on the display device 200.

  As described above, in the present embodiment, when the C / D apparatus 50 is notified to the exposure apparatus 10 via the communication apparatus CS that the reception impossible information that the wafer W from the exposure apparatus 10 is in a state where it cannot be received, the main control is performed. The apparatus 120 causes the exposure apparatus 10 to perform the predetermined process on the basis of the unacceptable information. For this reason, the time until the C / D device 50 becomes ready to receive a wafer is effectively utilized, which contributes to the improvement of productivity.

[Second Embodiment]
Next, a second embodiment of the present invention will be described based on FIG. In this figure, the same elements as those of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted. FIG. 4 shows the exposure apparatus 10 and the C / D apparatus 50 in a simplified manner.

  In the present embodiment, the exposure apparatus 10 (and the inline I / F unit 110) and the C / D apparatus 50 are provided independently of each other, and a plurality of C / D apparatuses 50 are provided. In each C / D device 50, a robot arm 47 for wafer transfer is sequentially arranged along the rail 91 immediately below the rail 91.

  Here, the robot 116 in the exposure apparatus 10 (inline I / F unit 110) includes two load units 116A and two unload units 116B. The load portion 116 </ b> A and the unload portion 116 </ b> B are sequentially arranged along the rail 91 immediately below the rail 91.

  A cassette (pod) in which a plurality of (for example, 25) wafers on which photosensitive material coating processing has been performed is accommodated in each load unit 116A is conveyed by the conveyance unit 92, and the wafer taken out from each cassette is exposed. An exposure process or the like in the apparatus 10 is performed. Then, the processed wafer is delivered to the unload unit 116B and then discharged by the transfer unit 92.

  In the lithography system 100 configured as described above, for example, when an error occurs in one C / D apparatus 50 and the wafer W from the exposure apparatus 10 cannot be received, coating / development control of the C / D apparatus 50 is performed. Unacceptable information is transmitted from the apparatus 62 to the main controller 120 of the exposure apparatus 10 via the host computer HP.

  The main control device 120 that has received the unacceptable information causes the collection device 36 to collect the wafer W in the exposure apparatus 10 as a predetermined process, as in the first embodiment (processing step). Specifically, the wafer W in the exposure apparatus 10 is transferred to the collection apparatus 36 by the robot 26, and the wafer W is transferred to the outside of the exposure apparatus 10 by the collection apparatus 36. In this case, for example, the collected wafer W that has been subjected to the exposure process is transported to the C / D apparatus 50 in which no error has occurred among the plurality of C / D apparatuses 50 to perform the development process. Let it be done.

  After the collection of the wafer W, the main control device 120 notifies the application / development control device 62 of the C / D device 50 in a state in which the wafer W cannot be received, that is, the wafer collection information that the wafer W has been collected in the exposure device 10 (first operation). 2 notification process). The coating / development control device 62 provided in the C / D device 50 that cannot receive the wafer W controls the coating / development processing after the error is released based on the wafer collection information received via the communication device CS. become.

  After the wafer W is collected and the wafer collection information is transmitted, the main controller 120 performs, for example, a first execution in the exposure apparatus 10 as a predetermined process until the C / D apparatus 50 is ready to receive the wafer W. Exposure-related processing as described in the form may be performed as appropriate.

  In addition, when there is a C / D apparatus 50 in which no error has occurred among a plurality of C / D apparatuses 50, the wafer W can be supplied to any C / D apparatus 50. As a predetermined process, main controller 120 may continue the exposure process. On the other hand, when an error signal is transmitted from all of the plurality of coating / developing control devices 62, the main control device 120 causes the wafer W to be collected.

  As described above, in the lithography system 100 in which a plurality of C / D apparatuses 50 are connected to one exposure apparatus 10, an error occurs in a part of the C / D apparatuses 50, and the wafer W from the exposure apparatus 10 is transferred. Even in a case where the wafer W cannot be received, the processing can be continued by supplying the wafer W to the C / D apparatus 50 capable of receiving the wafer W, so that a decrease in productivity can be prevented. .

  Even if all the C / D apparatuses 50 cannot receive the wafer W from the exposure apparatus 10, predetermined processing such as collection processing and exposure-related processing is performed in the exposure apparatus 10, so that C / D A period until the apparatus 50 can receive the wafer W can be effectively used, and a reduction in productivity can be prevented.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

  For example, in the above embodiment, a configuration has been described in which the collection device 36 for collecting the wafer W in the exposure apparatus 10 is provided and the collection of the wafer W is automatically performed. However, the present invention is not limited to this. For example, the operator may manually collect the wafer W in the exposure apparatus 10 without providing the collection device 36. Further, when the wafer W is manually collected by the operator, it is preferable that the operator can be notified of the fact when the unacceptable information is transmitted from the C / D device 50.

  The substrate (object) in each of the above embodiments is not limited to a semiconductor wafer for manufacturing a semiconductor device, but a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or a mask or reticle used in an exposure apparatus. The original plate (synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus 10, in addition to a step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the reticle R by synchronously moving the reticle R and the wafer W, the reticle R and the wafer W It can also be applied to a step-and-repeat projection exposure apparatus (stepper) in which the pattern of the reticle R is collectively exposed while the wafer is stationary and the wafer W is sequentially moved stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that partially transfers at least two patterns on the wafer W.

  The type of the exposure apparatus 10 is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto the wafer W, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ) Or an exposure apparatus for manufacturing reticles or masks.

  The light source of the exposure apparatus to which the present invention is applied includes not only KrF excimer laser (248 nm), ArF excimer laser (193 nm), F2 laser (157 nm), but also g-line (436 nm) and i-line (365 nm). Can be used. Further, the magnification of the projection optical system may be not only a reduction system but also an equal magnification or an enlargement system. In the above embodiment, the catadioptric projection optical system is exemplified, but the present invention is not limited to this, and the optical axis (reticle center) of the projection optical system and the center of the projection area are set at different positions. It can also be applied to a refraction type projection optical system.

  The present invention is also applicable to a so-called immersion exposure apparatus that locally fills a liquid between the projection optical system and the substrate and exposes the substrate through the liquid. The immersion exposure apparatus is disclosed in International Publication No. 99/49504 pamphlet. Further, in the present invention, the entire surface of the substrate to be exposed as disclosed in JP-A-6-124873, JP-A-10-303114, US Pat. No. 5,825,043 and the like is in the liquid. The present invention is also applicable to an immersion exposure apparatus that performs exposure while being immersed.

  The present invention can also be applied to a twin stage type exposure apparatus provided with a plurality of substrate stages (wafer stages). The structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549). , 269 and 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407. Furthermore, the present invention may be applied to the wafer stage disclosed in Japanese Patent Application No. 2004-168482 filed earlier by the present applicant.

  An exposure apparatus to which the present invention is applied assembles various subsystems including the constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  Next, an embodiment of a manufacturing method of a micro device using the exposure apparatus and the exposure method according to the embodiment of the present invention in the lithography process will be described. FIG. 5 is a flowchart showing a manufacturing example of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micro machine, etc.).

  First, in step S10 (design step), function / performance design (for example, circuit design of a semiconductor device) of a micro device is performed, and pattern design for realizing the function is performed. Subsequently, in step S11 (mask manufacturing step), a mask (reticle) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S12 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

  Next, in step S13 (wafer processing step), using the mask and wafer prepared in steps S10 to S12, an actual circuit or the like is formed on the wafer by lithography or the like, as will be described later. Next, in step S14 (device assembly step), device assembly is performed using the wafer processed in step S13. This step S14 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S15 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S14 are performed. After these steps, the microdevice is completed and shipped.

FIG. 6 is a diagram illustrating an example of a detailed process of step S13 in the case of a semiconductor device.
In step S21 (oxidation step), the surface of the wafer is oxidized. In step S22 (CVD step), an insulating film is formed on the wafer surface. In step S23 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S24 (ion implantation step), ions are implanted into the wafer. Each of the above steps S21 to S24 constitutes a first process in each stage of wafer processing, and is selected and executed according to a necessary process in each stage.

  When the first process is completed at each stage of the wafer process, the second process is executed as follows. In this second step, first, in step S25 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S26 (exposure step), the circuit pattern of the mask is transferred to the wafer by the lithography system (exposure apparatus) and the exposure method described above. Next, in step S27 (development step), the exposed wafer is developed, and in step S28 (etching step), exposed members other than the portion where the resist remains are removed by etching. In step S29 (resist removal step), the resist that has become unnecessary after the etching is removed. By repeatedly performing these first and second steps, multiple circuit patterns are formed on the wafer.

  Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., from mother reticles to glass substrates and The present invention can also be applied to an exposure apparatus that transfers a circuit pattern to a silicon wafer or the like. Here, in an exposure apparatus using DUV (deep ultraviolet), VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. In proximity-type X-ray exposure apparatuses, electron beam exposure apparatuses, and the like, a transmissive mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate. Such an exposure apparatus is disclosed in WO99 / 34255, WO99 / 50712, WO99 / 66370, JP-A-11-194479, JP-A2000-12453, JP-A-2000-29202, and the like. .

1 is a plan view showing a schematic configuration of a lithography system according to a first embodiment of the present invention. 1 is a diagram showing the configuration of an exposure apparatus according to the present embodiment. 1 is a diagram illustrating a configuration of a coating and developing apparatus (C / D apparatus) according to an embodiment. The top view which shows schematic structure of the lithography system which concerns on 2nd Embodiment of this invention. The flowchart figure which shows an example of the manufacturing process of a microdevice. The figure which shows an example of the detailed process of step S13 in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Exposure apparatus 36 ... Collection | recovery apparatus 50 ... C / D apparatus 100 ... Lithography system 120 ... Main control apparatus (control apparatus) CS ... Communication apparatus W ... Wafer (substrate)

Claims (14)

An exposure apparatus that performs exposure processing on a substrate and delivers the exposed substrate to and from a predetermined apparatus,
An exposure apparatus comprising: a control device that performs a predetermined process inside the apparatus based on the unreceivable information that the substrate from the exposure apparatus is unreceivable. The exposure apparatus according to claim 1, wherein the predetermined process is a process of collecting the substrate inside the apparatus. The exposure apparatus according to claim 2, wherein after the substrate is collected, the control device sends out substrate collection information indicating that the substrate has been collected inside the device. The exposure apparatus according to claim 2, wherein the predetermined process includes an exchange process of a material used for the exposure process. The exposure apparatus according to claim 2, wherein the predetermined process includes a measurement process related to the exposure process or a calibration process of the measurement process. The exposure apparatus according to claim 1, wherein the predetermined process is an exposure process for the substrate. The exposure apparatus according to any one of claims 1 to 6, further comprising a recovery device that recovers the substrate. An exposure method for performing exposure processing on a substrate by an exposure apparatus,
An exposure method comprising: a processing step of performing a predetermined process in the exposure apparatus based on the reception-impossible information that the substrate from the exposure apparatus is in a state where the substrate cannot be received. The exposure method according to claim 8, wherein the predetermined process is a process of collecting the substrate in the exposure apparatus. The exposure method according to claim 9, wherein after the processing step, substrate recovery information indicating that the substrate has been recovered is sent out by the exposure apparatus. The exposure method according to claim 9 or 10, wherein the predetermined process includes a replacement process of a material used for the exposure process. The exposure method according to claim 9 or 10, wherein the predetermined process includes a measurement process related to the exposure process or a calibration process of the measurement process. The exposure method according to claim 8, wherein the predetermined process is an exposure process for the substrate.   A device manufacturing method, wherein a device is manufactured using the exposure method according to any one of claims 8 to 13.

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