JP2009071321A5 - - Google Patents

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Publication number
JP2009071321A5
JP2009071321A5 JP2008290569A JP2008290569A JP2009071321A5 JP 2009071321 A5 JP2009071321 A5 JP 2009071321A5 JP 2008290569 A JP2008290569 A JP 2008290569A JP 2008290569 A JP2008290569 A JP 2008290569A JP 2009071321 A5 JP2009071321 A5 JP 2009071321A5
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Japan
Prior art keywords
layer
etching
hard mask
manufacturing
gas containing
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JP2008290569A
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Japanese (ja)
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JP2009071321A (en
JP4448185B2 (en
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Priority claimed from JP2008290569A external-priority patent/JP4448185B2/en
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Publication of JP2009071321A5 publication Critical patent/JP2009071321A5/ja
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Claims (3)

少なくとも２層の磁性層を含む磁性多層膜からなる磁性抵抗効果素子の製造方法において、
最上層にＴａ層、上から２番目にＲｕ（ルテニウム）、Ｒｈ（ロジウム）、Ｏｓ（オスミウム）、Ｎｂ（ニオブ）、Ｉｒ（イリジウム）、及びＲｅ（レニウム）のいずれか１つの金属からなる保護層を設けた磁性多層膜を形成し、
レジストパターンを用いて前記Ｔａ層をエッチングして、Ｔａのハードマスクを形成した後、
該Ｔａのハードマスクを用いて、前記保護層及びこの保護層より下側の層をエッチングし、該エッチングと共に又は該エッチングの後に、前記Ｔａのハードマスクを除去して前記保護層を最上層として露出させることを特徴とする磁性抵抗効果素子の製造方法。 In a method of manufacturing a magnetoresistive effect element comprising a magnetic multilayer film including at least two magnetic layers ,
Ta layer as the uppermost layer , and protection from any one of Ru (ruthenium), Rh (rhodium), Os (osmium), Nb (niobium), Ir (iridium), and Re (rhenium) from the top. Forming a magnetic multilayer film with layers,
After etching the Ta layer using a resist pattern to form a Ta hard mask,
Using the Ta hard mask, the protective layer and a layer below the protective layer are etched, and together with or after the etching, the Ta hard mask is removed to make the protective layer the top layer. A method of manufacturing a magnetoresistive effect element, characterized by being exposed . 前記Ｔａのハードマスクを用いたエッチングを、酸素原子を含むエッチングガスを用いて行うことを特徴とする請求項１に記載の磁性抵抗効果素子の製造方法。 2. The method of manufacturing a magnetoresistive element according to claim 1, wherein etching using the Ta hard mask is performed using an etching gas containing oxygen atoms . 前記酸素原子を含むエッチングガスが、一酸化炭素と含窒素化合物の混合ガス、又は水酸基を少なくとも１つ含むアルコール系のガスであることを特徴とする請求項２に記載の磁性抵抗効果素子の製造方法。 3. The magnetoresistive element according to claim 2 , wherein the etching gas containing oxygen atoms is a mixed gas of carbon monoxide and a nitrogen-containing compound or an alcohol-based gas containing at least one hydroxyl group. Method.
JP2008290569A 2008-11-13 2008-11-13 Method for manufacturing magnetoresistive element Expired - Fee Related JP4448185B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008290569A JP4448185B2 (en) 2008-11-13 2008-11-13 Method for manufacturing magnetoresistive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008290569A JP4448185B2 (en) 2008-11-13 2008-11-13 Method for manufacturing magnetoresistive element

Related Parent Applications (1)

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JP2004240838A Division JP2006060044A (en) 2004-08-20 2004-08-20 Manufacturing method of magnetoresistance effect element

Related Child Applications (1)

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JP2009261796A Division JP2010045398A (en) 2009-11-17 2009-11-17 Method for manufacturing magnetoresistance effect element

Publications (3)

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JP2009071321A JP2009071321A (en) 2009-04-02
JP2009071321A5 true JP2009071321A5 (en) 2009-05-14
JP4448185B2 JP4448185B2 (en) 2010-04-07

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JP2008290569A Expired - Fee Related JP4448185B2 (en) 2008-11-13 2008-11-13 Method for manufacturing magnetoresistive element

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5461148B2 (en) * 2009-11-05 2014-04-02 株式会社日立ハイテクノロジーズ Plasma etching method and apparatus
JP5720681B2 (en) * 2010-05-28 2015-05-20 日本電気株式会社 Thin film magnetic device and manufacturing method thereof

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