JP2009049055A - Method of forming metal bump on semiconductor coupling sheet - Google Patents

Method of forming metal bump on semiconductor coupling sheet Download PDF

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JP2009049055A
JP2009049055A JP2007211302A JP2007211302A JP2009049055A JP 2009049055 A JP2009049055 A JP 2009049055A JP 2007211302 A JP2007211302 A JP 2007211302A JP 2007211302 A JP2007211302 A JP 2007211302A JP 2009049055 A JP2009049055 A JP 2009049055A
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metal
bump
semiconductor
metal layer
layer
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Enrei Yu
宛伶 兪
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

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Abstract

<P>PROBLEM TO BE SOLVED: To provide the method of forming a metal bump on a semiconductor coupling sheet. <P>SOLUTION: In the method of forming a metal bump on a semiconductor coupling sheet, a hole is formed on a bump base metal layer after thermo-compressing metal foil onto a semiconductor component comprising the bump base metal layer via an insulating film mainly on the semiconductor component on which the bump base metal layer is already completed. The metal bump is formed in the hole by non-electrolysis immersion plating and electroplating. Therefore, the metal bump formed of various highly conductive metals can be formed using electroplating. Unlike in prior art, the material is not restricted to gold, tin, or lead. The insulating film can protect the coupling sheet when the bump is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は金属バンプの形成方法に関し、特に半導体の連結シートにて金属バンプを形成する方法に関する。   The present invention relates to a method for forming metal bumps, and more particularly to a method for forming metal bumps using a semiconductor connection sheet.

半導体部品がフリップチップ実装できるようにするには、チップに突出電極が必要である。突出電極は二部分に分けることができ、一つはバンプ下地金属、もう一つは金属バンプそのものである。   In order to allow the semiconductor component to be flip-chip mounted, a protruding electrode is required on the chip. The protruding electrode can be divided into two parts, one is a bump base metal and the other is a metal bump itself.

バンプ下地金属は通常三層の金属を含み、接着層、バリア層及び接合層で作られる。接着層の材質はアルミニウム或いはクロム、バリア層の材質は銅、鉛、白金、接合層の材質は金にすることができる。上述の金属バンプの材質はスズ鉛バンプと金バンプの二つに分けられる。   The bump base metal usually includes three layers of metal and is made of an adhesive layer, a barrier layer, and a bonding layer. The material of the adhesive layer can be aluminum or chromium, the material of the barrier layer can be copper, lead, platinum, and the material of the bonding layer can be gold. The material of the metal bumps described above can be divided into two types, tin lead bumps and gold bumps.

バンプ下地金属層の上にスズ鉛バンプを形成し、主に電気めっき法及びプリント法の二つを採用している。電気めっき法では、バンプ下地金属層の上に、図案化(ゾーンシステムの後)の電気抵抗めっき膜を形成し、電気抵抗めっき膜は、バンプ下地金属層にてスズ鉛バンプを電気めっきする。プリント法を採用する場合、まず鋼板を使い、ソルダペーストをバンプ下地金属に印刷してから、熱で該ソルダペーストを溶かし、金属バンプとして固化する。しかし、電気めっき法及びプリント法のいずれにより形成するスズ鉛バンプは、気泡が存在し、取れやすい問題が生じるため、生産率が低い。   Tin lead bumps are formed on the bump base metal layer, and two main methods are electroplating and printing. In the electroplating method, a designed (after the zone system) electric resistance plating film is formed on the bump base metal layer, and the electric resistance plating film is obtained by electroplating a tin lead bump on the bump base metal layer. When adopting the printing method, first, a steel plate is used, and a solder paste is printed on a bump base metal, and then the solder paste is melted by heat to be solidified as a metal bump. However, the tin lead bump formed by either the electroplating method or the printing method has a low production rate because air bubbles are present and a problem that it is easy to remove occurs.

後続製造過程(例えばTCP、COG)のニーズに合わせ、スズ鉛バンプの電気めっき方法に似た手段でバンプ下地金属に金バンプを作る。または特製の機械を使い、バンプ下地金属層の上に数回に渡りボール状のものを打ち(まずゴールドの糸を球状に焼く)、必要な高さにする。しかし、金バンプの材料コストが高めであり、普及できない。
特開２００５−２４３７１４号公報 In order to meet the needs of subsequent manufacturing processes (eg TCP, COG), gold bumps are made on the bump base metal by means similar to the electroplating method of tin lead bumps. Alternatively, use a special machine to strike a ball-shaped object several times on the bump base metal layer (first bake gold thread into a spherical shape) to the required height. However, the material cost of the gold bump is high and cannot be spread.
JP 2005-243714 A

本発明の第1の目的は、多種の金属材料の中から一種類或いは多種の金属材料を選び、無電解浸せきめっき及び電気めっきを利用し、チップに金属バンプを形成することで、次段階のパッキング或いは組立がしやすくなる。チップ及びバンプとの結合場所は、金属自身の結合力のほかに、絶縁フィルムの具有する粘着性のある結合力を具有するため、更にしっかりと結合することができる半導体連結シートに金属バンプを形成する方法を提供することにある。   The first object of the present invention is to select one or many kinds of metal materials from among various kinds of metal materials, and use electroless immersion plating and electroplating to form metal bumps on the chip. Easy to pack or assemble. In addition to the bonding strength of the metal itself, the chip and bump bonding location has the adhesive strength of the insulating film, so the metal bumps are formed on the semiconductor connection sheet that can be bonded more firmly. It is to provide a way to do.

上述の目的を解決するために、本発明は半導体の連結シートにて金属バンプを形成する方法を提供することであり、主に完成済みのバンプ下地金属層(UBM)の半導体部品の上に、まず絶縁フィルムでバンプ下地金属を具有する半導体部品の上に、金属箔で熱圧着し、更に該バンプ下地金属層の上に穴を形成し、無電解浸せきめっき及び、電気めっきを利用し、該穴の上に金属バンプを形成する。そうすることで、無電解めっき及び電気めっきは、金及びスズ鉛に限らず、様々な高い導電性のある金属バンプを形成する。また、バンプを形成するとき、絶縁フィルムは連結シート及び金属バンプの結合をプロテクトすることができる。   In order to solve the above-mentioned object, the present invention provides a method of forming metal bumps in a semiconductor connection sheet, mainly on a semiconductor component of a completed bump base metal layer (UBM), First, on a semiconductor component having a bump base metal with an insulating film, thermocompression bonding with a metal foil, further forming a hole on the bump base metal layer, using electroless immersion plating and electroplating, Form metal bumps on the holes. By doing so, electroless plating and electroplating form various highly conductive metal bumps, not limited to gold and tin lead. In addition, when the bump is formed, the insulating film can protect the connection between the connection sheet and the metal bump.

連結シートの表面にバンプ下地金属層を具有する半導体部品に、順に金属箔と絶縁フィルムをバンプ下地金属層を具有する半導体部品の上に貼り、更に、バンプ下地金属層の上にある金属箔と絶縁フィルムを無くして穴を形成し、無電解浸せきめっき及び電気めっきを使い、該穴の上に多種の金属材料より一種類或いは多種の金属材料を選び金属バンプを形成し、次段階のパッケージ或いは組立が便利になる。また、半導体部品と金属バンプの結合処は、金属バンプとバンプ下地金属層との間に存在する金属自身の結合力を具有するほか、作業中液体化する絶縁フィルムは永久固体化するため、半導体部品の表面及び金属バンプはしっかりと結合することができる。 A semiconductor foil having a bump base metal layer on the surface of the connecting sheet, in order, a metal foil and an insulating film are stuck on the semiconductor part having the bump base metal layer, and a metal foil on the bump base metal layer A hole is formed without an insulating film, and electroless immersion plating and electroplating are used. One or more metal materials are selected from the various metal materials on the holes to form metal bumps. Assembly becomes convenient. In addition, the semiconductor parts and metal bumps are bonded to each other by having the bonding force of the metal itself that exists between the metal bumps and the bump base metal layer, and the insulating film that is liquefied during the work becomes a solid solid. The surface of the part and the metal bumps can be firmly bonded.

本発明による半導体の連結シートにて金属バンプを形成する方法を明確に示すために図に沿って詳細な説明を行う。
図１~図８の示すのは、本発明の半導体の連結シートにて金属バンプの形成方法の略図である。図１が示すのは、従来技術の構造である。図２~図８が示すのは、本発明の主な手順である。図１に示すのは、半導体部品10の上に連結シート12、プロテクト層14(半導体部品10を覆い、且つ連結シート12を露出させる)、バンプ下地金属層16(連結シート12を覆う)を具有する。その中で、プロテクト層14をオプションで使用する。 In order to clearly show a method of forming metal bumps on the semiconductor connection sheet according to the present invention, a detailed description will be given along the drawings.
1 to 8 are schematic views of a method for forming metal bumps in the semiconductor connection sheet of the present invention. FIG. 1 shows a prior art structure. 2 to 8 show the main procedure of the present invention. FIG. 1 shows that a connection sheet 12, a protection layer 14 (covers the semiconductor component 10 and exposes the connection sheet 12), and a bump base metal layer 16 (covers the connection sheet 12) on the semiconductor component 10. To do. Among them, the protection layer 14 is used as an option.

本発明の金属バンプの形成方法は、主に図１の示すように、既に連結シート12の表面にバンプ下地金属層16を具有する半導体部品10に、図２の示すように、順に金属箔20、絶縁フィルム18をバンプ下地金属層16を具有する半導体部品10の上に、図３のように組み合わせる。更に、図４の示すように、バンプ下地金属層16の上に穴22を形成し、無電解浸せきめっき及び電気めっきを使い、図７の示すように、該穴22の上に金属バンプ28(材質は金、銀、銅、スズ、鉛或いはその他の高い導電性のある金属)を形成する。多種の金属材料より一種類或いは多種の金属材料を選ぶことができるだけでなく、無電解浸せきめっき及び電気めっきの方法を使い、半導体部品10の上に金属バンプ28を形成し、次段階のパッケージ或いは組立が便利になる。また、半導体部品10と金属バンプ28の結合処は、金属バンプ28とバンプ下地金属層16との間に存在する金属自身の結合力を具有するほか、絶縁フィルム18の半導体部品10の表面及び金属バンプ28の具有する粘着性結合力を具有するため、更にしっかりと結合することができる。   As shown in FIG. 1, the metal bump forming method of the present invention is applied to a semiconductor component 10 that already has a bump base metal layer 16 on the surface of the connecting sheet 12, and as shown in FIG. The insulating film 18 is combined on the semiconductor component 10 having the bump base metal layer 16 as shown in FIG. Further, as shown in FIG. 4, a hole 22 is formed on the bump base metal layer 16 and electroless dip plating and electroplating are used. As shown in FIG. The material is gold, silver, copper, tin, lead or other highly conductive metals. Not only can one kind or many kinds of metal materials be selected from various kinds of metal materials, but also by using a method of electroless immersion plating and electroplating, metal bumps 28 are formed on the semiconductor component 10, and the next stage package or Assembly becomes convenient. Further, the bonding process between the semiconductor component 10 and the metal bump 28 includes the bonding force of the metal itself existing between the metal bump 28 and the bump base metal layer 16, and the surface of the semiconductor component 10 of the insulating film 18 and the metal. Since the bump 28 has an adhesive bonding force, it can be more firmly bonded.

ある温度の間では、上述の絶縁フィルム18は液体状或いは暫時固体状を呈すため、図1Cが示すように、それを半導体部品10の上を覆い、粘着することができる。一定時間を持ち、絶縁フィルム18に十分な熱量及びプレス力を施すと、液体或いは暫時固体状の絶縁フィルム18は永久固体状に固化されるため、絶縁フィルム18はしっかりと半導体部品10の表面に結合する。   Between a certain temperature, the above-mentioned insulating film 18 exhibits a liquid state or a solid state for a while, so that it can cover and adhere to the semiconductor component 10 as shown in FIG. 1C. When a sufficient amount of heat and pressing force are applied to the insulating film 18 for a certain period of time, the liquid or temporary solid insulating film 18 is solidified into a permanent solid, so that the insulating film 18 is firmly attached to the surface of the semiconductor component 10. Join.

上述の製造過程の中で、絶縁フィルム18をまず金属箔20の上にかぶせてから、半導体部品10の上に貼合する。或いはまず半導体部品10の上に絶縁フィルム18をかぶせてから金属箔20を粘着する。絶縁フィルム18は液体状あるいは暫時固体状にすることができる。暫時固体状の絶縁フィルム18を使用する場合、加熱加圧の過程にて、絶縁フィルム18は暫時固体状から液体状に変わり、その後また永久に固体状になる特性を具有することで、半導体部品10との接合を保障する。   In the above manufacturing process, the insulating film 18 is first covered on the metal foil 20 and then bonded onto the semiconductor component 10. Alternatively, the insulating film 18 is first covered on the semiconductor component 10 and then the metal foil 20 is adhered. The insulating film 18 can be liquid or temporarily solid. In the case of using a solid insulating film 18 for a while, the insulating film 18 changes from a solid state to a liquid state for a while in the process of heating and pressurization, and then becomes a solid state again. Ensures joint with 10.

上述の通りに絶縁フィルム18を固化した後、及び電気めっきによって金属バンプ28を形成する前に、図４の示すように、バンプ下地金属層16に狙いを定め、レーザー或いは化学腐蝕により金属箔20を取り除いてから、レーザー或いはゾーンシステムにより絶縁フィルム18を取り除き、バンプ下地金属層16を露にすることで、穴22が形成する。そして、無電解浸せきめっき或いはイオンスパッタリングにより、図５が示すように、少なくとも穴22を含む壁に薄い金属層24(例えば化学銅)を形成する。信頼性を増すために、無電解金属層の上に一層の金属をめっきしてから、図６が示すように、金属箔20の上に電気抵抗めっき膜26を形成する。電気抵抗めっき膜26は無電解金属層24を具有する穴22を塞いでいない。最後に、金属箔20及び無電解金属層24を利用し、電気めっきの電流をバンプ下地金属層16にまで伝達し、図７のように、バンプ下地金属層16の上に金属バンプ28を電気めっきする。後の製造過程では、金属バンプは中身の詰まった或いは中空の金属バンプにすることができる。該形状は円柱、四角柱、三角柱、菱形柱、星型柱、多角形柱或いは上述の形状を結合した形にすることができる。図８が示すのは、電気抵抗めっき膜26を取り除き、及びレーザー或いは化学腐蝕を利用し、完全に金属箔20を取り除くことで、金属バンプの製造が完成する。電気抵抗めっき膜26の厚みは必要とする金属バンプの高さにより決まる。   After solidifying the insulating film 18 as described above and before forming the metal bumps 28 by electroplating, as shown in FIG. 4, the bump base metal layer 16 is aimed and the metal foil 20 is formed by laser or chemical corrosion. Then, the insulating film 18 is removed by a laser or a zone system, and the bump base metal layer 16 is exposed, so that the hole 22 is formed. Then, as shown in FIG. 5, a thin metal layer 24 (for example, chemical copper) is formed on the wall including at least the holes 22 by electroless immersion plating or ion sputtering. In order to increase the reliability, a single layer of metal is plated on the electroless metal layer, and then an electric resistance plating film 26 is formed on the metal foil 20 as shown in FIG. The electric resistance plating film 26 does not block the hole 22 having the electroless metal layer 24. Finally, using the metal foil 20 and the electroless metal layer 24, the electroplating current is transmitted to the bump base metal layer 16, and the metal bumps 28 are electrically formed on the bump base metal layer 16 as shown in FIG. Plating. In later manufacturing processes, the metal bumps can be solid or hollow metal bumps. The shape can be a cylinder, a quadrangular prism, a triangular prism, a rhomboid column, a star column, a polygonal column, or a combination of the above shapes. FIG. 8 shows that the electrical resistance plating film 26 is removed and the metal foil 20 is completely removed by using laser or chemical corrosion to complete the manufacture of the metal bumps. The thickness of the electric resistance plating film 26 is determined by the required metal bump height.

まず絶縁フィルム18を半導体部品10の上にかぶせてから金属箔20を粘着するプロセスで進行する場合も、まず絶縁フィルムを固化してから、レーザー或いはゾーンシステムにより、バンプ下地金属層16の上方に穴22を形成し、金属箔20を粘着してから上述の作業を進行する。或いは無電解浸せきめっき或いはイオンスパッタリングにより、絶縁フィルム18及び穴22の壁面に薄い金属層24を形成してから、電気めっきを用いて薄い金属層24を導電が良好となる厚みにまで厚くした後、金属層の上に電気抵抗めっき膜26をかぶせる。この電気抵抗めっき膜26は穴22を露にしてから、電気めっきによりバンプ下地金属層16の上に金属バンプ28をつける。   In the case of proceeding with the process of sticking the metal foil 20 after covering the semiconductor component 10 with the insulating film 18 first, after solidifying the insulating film first, the laser or zone system is used above the bump base metal layer 16. After the hole 22 is formed and the metal foil 20 is adhered, the above-described operation is performed. Alternatively, after forming a thin metal layer 24 on the wall surfaces of the insulating film 18 and the hole 22 by electroless immersion plating or ion sputtering, and then thickening the thin metal layer 24 to a thickness that provides good electrical conductivity using electroplating Then, an electric resistance plating film 26 is placed on the metal layer. The electric resistance plating film 26 exposes the holes 22 and then attaches metal bumps 28 on the bump base metal layer 16 by electroplating.

穴22を形成する際、まずバンプ下地金属層16の位置を知る必要がある。分析する方法としては、予め半導体部品10の背面に残した光学ポイントの位置を検視し、該光学ポイントと連結シート12の座標関係により、バンプ下地金属層16の位置を知る。また、X線機器を用いて、金属箔20を写し、直接バンプ下地金属層16の位置を検視、或いは半導体部品10に予め残した光学ポイントの位置を検視し、該光学ポイントと連結シート12の座標関係を介し、バンプ下地金属層16の位置を確定する。   When the hole 22 is formed, it is first necessary to know the position of the bump base metal layer 16. As an analysis method, the position of the optical point left on the back surface of the semiconductor component 10 is examined in advance, and the position of the bump base metal layer 16 is known from the coordinate relationship between the optical point and the connecting sheet 12. Also, using an X-ray device, copy the metal foil 20, directly inspect the position of the bump base metal layer 16, or inspect the position of the optical point previously left in the semiconductor component 10, the optical point and the connection sheet 12 The position of the bump base metal layer 16 is determined through the coordinate relationship.

以上の実施例による本発明の詳細な説明は本発明の範囲を制限するものではない。本技術に熟知する者は、固定構造の変更などの適当な変更および調整を行うことができ、これらの変更および調整を行っても本発明の重要な意義は失われず、本発明の範囲に含まれる。   The detailed description of the invention by way of the above examples does not limit the scope of the invention. Those skilled in the art can make appropriate changes and adjustments such as changes in the fixing structure, and even if these changes and adjustments are made, the significance of the present invention is not lost and is included in the scope of the present invention. It is.

本発明の半導体連結シートでの金属バンプの形成方法の略図である。It is the schematic of the formation method of the metal bump in the semiconductor connection sheet of this invention. 本発明の半導体連結シートでの金属バンプの形成方法の略図である。It is the schematic of the formation method of the metal bump in the semiconductor connection sheet of this invention. 本発明の半導体連結シートでの金属バンプの形成方法の略図である。It is the schematic of the formation method of the metal bump in the semiconductor connection sheet of this invention. 本発明の半導体連結シートでの金属バンプの形成方法の略図である。It is the schematic of the formation method of the metal bump in the semiconductor connection sheet of this invention. 本発明の半導体連結シートでの金属バンプの形成方法の略図である。It is the schematic of the formation method of the metal bump in the semiconductor connection sheet of this invention. 本発明の半導体連結シートでの金属バンプの形成方法の略図である。It is the schematic of the formation method of the metal bump in the semiconductor connection sheet of this invention. 本発明の半導体連結シートでの金属バンプの形成方法の略図である。It is the schematic of the formation method of the metal bump in the semiconductor connection sheet of this invention. 本発明の半導体連結シートでの金属バンプの形成方法の略図である。It is the schematic of the formation method of the metal bump in the semiconductor connection sheet of this invention.

符号の説明Explanation of symbols

10 半導体部品
12 連結シート
14 プロテクト層
16 バンプ下地金属層
18 絶縁フィルム
20 金属箔
22 穴
24 無電解金属層
26 電気抵抗めっき膜
28 金属バンプ 10 Semiconductor parts
12 Connecting sheet
14 Protection layer
16 Bump base metal layer
18 Insulating film
20 Metal foil
22 holes
24 Electroless metal layer
26 Electrical resistance plating film
28 Metal bump

Claims (9)

半導体部品及びバンプ下地金属を具有し、
該半導体部品は連結シートを具有し、及び
該半導体部品の連結シートの上にバンプ下地金属を形成し、及び、
金属箔、絶縁フィルムの順に該バンプ下地金属層を具有する該半導体部品の上に設置し、及び、
該半導体部品の該バンプ下地金属層の上にある該金属箔、該絶縁フィルムを取り除き、該バンプ下地金属層を露にし、及び、
露になった該バンプ下地金属層の穴の壁面に無電解金属層を形成し、更に一層の金属層を加えることもでき、及び、
該金属箔の上に電気抵抗めっき膜を形成し、該電気抵抗めっき膜は該無電解金属層を具有する穴をふさがないようにし、及び、
該金属箔、該無電解金属層を利用し、電気めっきの電流を該バンプ下地金属層にまで伝達し、該バンプ下地金属層の上に金属バンプを電気めっきし、及び、
電気抵抗めっき膜及び該金属箔を取り除くことを特徴とする半導体の連結シートにて金属バンプを形成する方法。 Having semiconductor parts and bump base metal,
The semiconductor component has a connection sheet; and a bump base metal is formed on the connection sheet of the semiconductor component; and
Installed on the semiconductor component having the bump base metal layer in the order of metal foil and insulating film, and
Removing the metal foil on the bump base metal layer of the semiconductor component, the insulating film, exposing the bump base metal layer, and
An electroless metal layer can be formed on the wall surface of the hole of the bump base metal layer that has become dew, and a further metal layer can be added; and
Forming an electric resistance plating film on the metal foil, the electric resistance plating film not blocking a hole having the electroless metal layer; and
Utilizing the metal foil, the electroless metal layer, transmitting an electroplating current to the bump base metal layer, electroplating metal bumps on the bump base metal layer, and
A method of forming metal bumps on a semiconductor connection sheet, wherein the electric resistance plating film and the metal foil are removed. 前記半導体部品は集積回路、トランジスタ、サイリスタ或いはダイオードなどであることを特徴とする請求項1記載の半導体の連結シートにて金属バンプを形成する方法。   2. The method of forming metal bumps on a semiconductor connection sheet according to claim 1, wherein the semiconductor component is an integrated circuit, a transistor, a thyristor, or a diode. 前記バンプ下地金属層は粘着層、バリア層、接合層によって組立てられていることを特徴とする請求項1記載の半導体の連結シートにて金属バンプを形成する方法。   2. The method for forming metal bumps on a semiconductor connection sheet according to claim 1, wherein the bump base metal layer is assembled by an adhesive layer, a barrier layer, and a bonding layer. 前記粘着層の材質はアルミ或いはクロム、バリア層の材質は銅、鉛、白金、接合層の材質は金であることを特徴とする請求項3記載の半導体の連結シートにて金属バンプを形成する方法。   4. The metal bump is formed on the semiconductor connection sheet according to claim 3, wherein the adhesive layer is made of aluminum or chromium, the barrier layer is made of copper, lead, platinum, and the bonding layer is made of gold. Method. 前記金属箔の材質は銅箔、アルミ箔あるいはスズ箔であることを特徴とする請求項1記載の半導体の連結シートにて金属バンプを形成する方法。   2. The method for forming metal bumps on a semiconductor connection sheet according to claim 1, wherein the material of the metal foil is copper foil, aluminum foil or tin foil. 前記無電解金属層の材質は化学銅或いは無電解ニッケルであることを特徴とする請求項1記載の半導体の連結シートにて金属バンプを形成する方法。   2. The method of forming metal bumps on a semiconductor connection sheet according to claim 1, wherein the material of the electroless metal layer is chemical copper or electroless nickel. 前記金属バンプの材質は金、銀、銅、スズ、鉛或いはその他の高い導電性のある金属であることを特徴とする請求項1記載の半導体の連結シートにて金属バンプを形成する方法。   2. The method for forming a metal bump on a semiconductor connecting sheet according to claim 1, wherein the material of the metal bump is gold, silver, copper, tin, lead, or other highly conductive metal. 前記金属バンプの中身は詰まっている或いは空洞のいずれでも良いことを特徴とする請求項1記載の半導体の連結シートにて金属バンプを形成する方法。   2. The method of forming metal bumps on a semiconductor connection sheet according to claim 1, wherein the metal bumps are filled or hollow. 前記金属バンプの形状は円柱、四角柱、三角柱、菱形柱、星型柱、多角形柱或いは上述の形状を結合した形にすることを特徴とする請求項1記載の半導体の連結シートにて金属バンプを形成する方法。   2. The semiconductor connection sheet according to claim 1, wherein the shape of the metal bump is a cylinder, a square column, a triangular column, a rhombus column, a star column, a polygon column, or a shape obtained by combining the above shapes. A method of forming bumps.
JP2007211302A 2007-08-14 2007-08-14 Method of forming metal bump on semiconductor coupling sheet Pending JP2009049055A (en)

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Publication number Priority date Publication date Assignee Title
JP2011108970A (en) * 2009-11-20 2011-06-02 Denso Corp Method of manufacturing semiconductor device
JP2013058775A (en) * 2010-09-02 2013-03-28 Samsung Electro-Mechanics Co Ltd Semiconductor package substrate and method of manufacturing the same

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JPH02224336A (en) * 1989-02-27 1990-09-06 Nec Corp Manufacture of semiconductor device
JPH08250551A (en) * 1995-03-10 1996-09-27 Mitsubishi Electric Corp Flip-chip and manufacture and mounting thereof and burn-in inspection substrate

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH02224336A (en) * 1989-02-27 1990-09-06 Nec Corp Manufacture of semiconductor device
JPH08250551A (en) * 1995-03-10 1996-09-27 Mitsubishi Electric Corp Flip-chip and manufacture and mounting thereof and burn-in inspection substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011108970A (en) * 2009-11-20 2011-06-02 Denso Corp Method of manufacturing semiconductor device
JP2013058775A (en) * 2010-09-02 2013-03-28 Samsung Electro-Mechanics Co Ltd Semiconductor package substrate and method of manufacturing the same

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