JP2009046369A - Iii−v族窒化物半導体基板及びiii−v族窒化物半導体基板の製造方法 - Google Patents
Iii−v族窒化物半導体基板及びiii−v族窒化物半導体基板の製造方法 Download PDFInfo
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Abstract
【解決手段】本発明に係るIII−V族窒化物半導体基板は、異種基板上にファセット面で成長したIII−V族窒化物半導体結晶の第1の領域と、異種基板上に所定の面方位で成長したIII−V族窒化物半導体結晶の第2の領域とを有し、第1の領域は、第2の領域に対して10%以下の面積比を有する。
【選択図】図1
Description
図1は、本発明の実施の形態に係るIII−V族窒化物半導体基板の製造の流れの一例を示す。
本発明の実施の形態によれば、III−V族窒化物半導体結晶としてのGaN結晶の結晶成長開始時から所定時間経過後に所定の原料ガスの分圧を増加させることにより、C面で成長した領域の総面積に対するファセット面で成長した領域の総面積の割合を10%以下にすることができる。これにより、得られたIII−V族窒化物半導体基板を粗研磨したときのクラック発生率を大幅に低下させることができる。
10a C面
20 初期核
22、24 GaN結晶
24a 凹凸部
26 GaN基板
30 ピット
30a ファセット面
40 GaN自立基板
40a 研磨面
40b C面成長領域
40c ファセット成長領域
Claims (6)
- 異種基板上にファセット面で成長したIII−V族窒化物半導体結晶の第1の領域と、
前記異種基板上に所定の面方位で成長したIII−V族窒化物半導体結晶の第2の領域とを有し、
前記第1の領域は、前記第2の領域に対して10%以下の面積比を有する
III−V族窒化物半導体基板。 - 前記第1の領域及び前記第2の領域は、前記異種基板としてサファイア基板上に成長させられた後、前記サファイア基板から分離される
請求項1に記載のIII−V族窒化物半導体基板。 - 前記第2の領域は、前記所定の面方位として(0001)面で成長させられる
請求項1又は2に記載のIII−V族窒化物半導体基板。 - 異種基板上にIII−V族窒化物半導体の原料ガスを第1の分圧で供給して所定の面方位とファセット面とでIII−V族窒化物半導体を前記異種基板上に成長させる第1の結晶成長工程と、
前記第1の結晶成長工程を所定時間継続させた後、前記第1の分圧よりも高い圧力の第2の分圧で前記III−V族窒化物半導体の原料ガスを供給することにより前記ファセット面での結晶成長を抑制して、前記所定の面方位と前記ファセット面とでIII−V族窒化物半導体を成長させる第2の結晶成長工程と
を備えるIII−V族窒化物半導体基板の製造方法。 - 前記第2の結晶成長工程が、前記ファセット面で成長する領域の面積が前記所定の面方位で成長する領域の面積の10%以下となる前記第2の分圧で前記III−V族窒化物半導体の原料ガスを供給する
請求項4に記載のIII−V族窒化物半導体基板の製造方法。 - 前記所定の面方位が、(0001)面である
請求項4又は5に記載のIII−V族窒化物半導体基板の製造方法。
Priority Applications (2)
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JP2007216223A JP4941172B2 (ja) | 2007-08-22 | 2007-08-22 | Iii−v族窒化物半導体自立基板及びiii−v族窒化物半導体自立基板の製造方法 |
US12/213,391 US20090050915A1 (en) | 2007-08-22 | 2008-06-18 | Group III-V nitride semiconductor substrate and method for producing same |
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JP2007216223A JP4941172B2 (ja) | 2007-08-22 | 2007-08-22 | Iii−v族窒化物半導体自立基板及びiii−v族窒化物半導体自立基板の製造方法 |
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JP2009046369A true JP2009046369A (ja) | 2009-03-05 |
JP4941172B2 JP4941172B2 (ja) | 2012-05-30 |
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Cited By (1)
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JP2011216580A (ja) * | 2010-03-31 | 2011-10-27 | Nichia Corp | Iii族窒化物半導体の成長方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4661989B1 (ja) | 2010-08-04 | 2011-03-30 | ウシオ電機株式会社 | レーザリフトオフ装置 |
US8110484B1 (en) * | 2010-11-19 | 2012-02-07 | Sumitomo Electric Industries, Ltd. | Conductive nitride semiconductor substrate and method for producing the same |
JP2014009156A (ja) * | 2012-06-29 | 2014-01-20 | Samsung Corning Precision Materials Co Ltd | 窒化ガリウム基板の製造方法および該方法により製造された窒化ガリウム基板 |
DE102014105303A1 (de) | 2014-04-14 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements |
FR3091020B1 (fr) | 2018-12-21 | 2023-02-10 | Saint Gobain Lumilog | SUBSTRAT SEMI-CONDUCTEUR CO-DOPE n |
Citations (5)
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JP2003277196A (ja) * | 2002-03-26 | 2003-10-02 | Hitachi Cable Ltd | 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス |
JP2006052102A (ja) * | 2004-08-10 | 2006-02-23 | Hitachi Cable Ltd | Iii−v族窒化物系半導体基板及びその製造方法並びにiii−v族窒化物系半導体 |
JP2006117530A (ja) * | 2006-01-11 | 2006-05-11 | Sumitomo Electric Ind Ltd | 単結晶GaN基板 |
JP2006165070A (ja) * | 2004-12-02 | 2006-06-22 | Mitsubishi Cable Ind Ltd | 窒化物半導体結晶の製造方法 |
JP2007197302A (ja) * | 2005-12-28 | 2007-08-09 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の製造方法および製造装置 |
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JP3864870B2 (ja) * | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2003277196A (ja) * | 2002-03-26 | 2003-10-02 | Hitachi Cable Ltd | 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス |
JP2006052102A (ja) * | 2004-08-10 | 2006-02-23 | Hitachi Cable Ltd | Iii−v族窒化物系半導体基板及びその製造方法並びにiii−v族窒化物系半導体 |
JP2006165070A (ja) * | 2004-12-02 | 2006-06-22 | Mitsubishi Cable Ind Ltd | 窒化物半導体結晶の製造方法 |
JP2007197302A (ja) * | 2005-12-28 | 2007-08-09 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の製造方法および製造装置 |
JP2006117530A (ja) * | 2006-01-11 | 2006-05-11 | Sumitomo Electric Ind Ltd | 単結晶GaN基板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011216580A (ja) * | 2010-03-31 | 2011-10-27 | Nichia Corp | Iii族窒化物半導体の成長方法 |
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