JP2009038119A - Electrical equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide electrical equipment in which an electrical component is completely shielded and a shield area is minimized by shortening a space distance of an electrical component periphery to a necessary minimum. <P>SOLUTION: The electrical equipment includes a multilayer wiring board 1 which has a wiring pattern H to which a semiconductor device 2 as the electrical component is connected on one surface and a ground pattern 3 on the other surface, a plurality of through holes 4 which are provided at predetermined intervals over between a peripheral position of the electrical component on the one surface of the multilayer wiring board and the ground pattern, a plurality of solder balls 5 which are disposed enclosing the semiconductor device and electrically connected to the through holes respectively, and a conductive top plate 6 which is electrically connected to those solder balls and covers the semiconductor device. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an electrical device having a shield structure for preventing interference caused by electromagnetic waves generated from, for example, a semiconductor device, which is an electrical component.

  In an electric device, such as a mobile phone having various functions, for example, the operating frequency is increased and the power increase is remarkable, and accordingly, a strong electromagnetic wave is emitted. One reason is that the distance between electrical components such as coils mounted on the wiring board is shortened, but it is likely to cause electromagnetic interference on other peripheral electrical components.

  In [Patent Document 1], an electromagnetic wave absorber made of a material other than metal is used to shield electromagnetic waves radiated from a joint portion between a mounting substrate on which a semiconductor package substrate is mounted and an external terminal of the semiconductor package substrate. An electromagnetic shield structure for a semiconductor package substrate characterized by being provided is disclosed.

  In [Patent Document 2], only a signal line drawn from a signal terminal of a shielded component, which is a surface mount type BGA, to the substrate is shielded by a BGA ball that is electrically connected to the ground, and the shield of the shielded component itself is as follows. A structure that is covered with a shield case made of a metal shield plate which is a separate part is disclosed.

  However, the ferrite used as an electromagnetic wave absorber in [Patent Document 1] is inferior in mass production because it has poor workability and high processing accuracy cannot be obtained. In addition, although an example is described in which a ferrite resin having a fluidity obtained by mixing ferrite powder into a resin is poured along the periphery of the substrate body and cured, the ferrite resin flows out around the substrate body, and the required area Becomes big.

Since the shield case of [Patent Document 2] is a metal plate, it may be processed by sheet metal, and there is no problem in mass productivity. However, there is no detailed description of the structure for attaching the shield case to the wiring board, and it is unclear. Therefore, to attach the shield case to the wiring board, the structure shown in FIG. 6 can be considered.
JP 2001-160605 A Japanese Patent Application Laid-Open No. 8-64983

  In the figure, a is a wiring board made of a metal plate, and a semiconductor device b is mounted on a predetermined wiring pattern portion. A narrow and partial gap exists between the bottom surface of the semiconductor device b and the surface of the wiring board a. If left as it is, moisture and harmful gas enter and remain in the gap. Over a long period of use, residual moisture and residual harmful gas have adverse effects such as corrosion of semiconductor devices and wiring boards.

  Therefore, the resin material c is underfilled in the gap between the bottom surface of the semiconductor device b and the surface of the wiring board a to prevent the adverse effect. At the same time, the strength of the attachment of the semiconductor device b to the wiring board a is enhanced by the underfilled resin material c, and even if a slight contact impact or a drop impact is applied to the electrical equipment including the wiring board a on which the semiconductor device b is mounted, Can withstand enough.

  As shown in the drawing, a part of the resin material c forming the underfill remains in a leaching (outflowing) state from the peripheral surface of the semiconductor device b. This leaching range is a so-called underfill-prohibited area Na in which no other electronic components can be provided, and usually 2 mm is necessary. The lower end of the frame e is soldered to the wiring board a outside the underfill prohibited area Na.

  The frame e is obtained by processing a metal plate having a plate thickness of 0.2 to 0.5 mm, and is a flat rectangular frame surrounding the semiconductor device b, and the upper end is bent inward. The pattern width Nb, which is a width necessary for soldering z the frame e to the wiring board a, must be at least 1 mm.

  The frame e is provided with a plurality of holes g, and a cover i provided with an emboss (projection) h that fits into each hole g is put on the frame e. The cover i is also a sheet metal processed product having the same plate thickness as the frame e, and the shield case Q is constituted by the cover i and the frame e. The shield case Q shields electromagnetic waves generated from the semiconductor device b from leaking outside.

  However, it is difficult to obtain a highly accurate flatness in the processed sheet metal product, and the soldering z between the frame e and the wiring board a is likely to be uneven. There is a possibility that a so-called unsoldered part may be partially generated, and electromagnetic waves leak from the part, so that complete shielding cannot be secured. Therefore, a large amount of solder must be piled up to cope with it, leading to an increase in the pattern width Nb.

  Further, the underfill prohibited area Na and the pattern width Nb are required along the entire periphery of the semiconductor device b, and the total of these is at least 3 mm. If the wiring board a is mounted with a plurality of semiconductor devices b, the wiring board a is naturally increased in size. And downsizing of, for example, a mobile phone, which is an electric device provided with the wiring board a, is restricted.

  The present invention has been made on the basis of the above circumstances, and the object thereof is to complete the shield for the electrical component, reduce the space distance around the electrical component to the necessary minimum, and reduce the shield area. It aims to provide minimized electrical equipment.

  In order to satisfy the above object, the present invention provides a multilayer wiring board having a wiring pattern to which an electrical component is connected on one side and a ground pattern on the other side, and an electrical component on one side of the multilayer wiring board at a predetermined interval. A plurality of through holes provided between the peripheral portion of the substrate and the ground pattern, a plurality of solder balls disposed so as to surround the electrical component and each electrically connected to the through hole, and the solder balls And a top plate member that is electrically connected and covers the electrical components.

  According to the present invention, the shield for the electrical component is perfected, the required spatial distance around the electrical component is shortened to the necessary minimum, and the shield area is minimized.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIGS. 1A and 1B are a schematic plan view and a cross-sectional view of an electrical apparatus 10 including an electrical component (hereinafter referred to as “semiconductor device”) 2 according to the first embodiment of the present invention. . Although only one semiconductor device 2 is shown here, a plurality of semiconductor devices 2 are actually provided.

  In the figure, reference numeral 1 denotes a multilayer wiring board, and a wiring pattern H is provided at a predetermined portion of the surface of the multilayer wiring board 1 (the upper surface of FIG. 1B). A BGA type semiconductor device 2 is mounted on the wiring pattern H.

  The semiconductor device 2 has a predetermined thickness and a rectangular shape in plan view. Spherical solder (hereinafter referred to as “solder ball”) 2 a serving as a substitute for the lead is projected on the bottom surface in an array shape and is flip-chip bonded to the wiring substrate 1. Specifically, the solder balls 2a on the bottom surface of the semiconductor device 2 form metal bumps, which are pressed and connected to electrode pads provided on the wiring pattern H of the multilayer wiring board 1.

  A ground pattern 3 that is grounded to the ground (GND) is provided on the back surface of the multilayer wiring board 1. Further, in the multilayer wiring board 1, a plurality of through holes 4 are provided at predetermined intervals across the ground pattern 3 provided on the back surface of the multilayer wiring board 1 and the surface of the multilayer wiring board 1.

  In other words, one end of the through hole 4 is exposed on the surface of the multilayer wiring board 1, and the exposed position is separated from the peripheral edge of the semiconductor device 2 by a predetermined interval. Therefore, the through hole 4 is provided between the peripheral portion of the semiconductor device 2 on the surface of the multilayer wiring board 1 and the ground pattern 3.

A solder ball 5 is joined to one end of the through hole 4. The solder balls 5 are represented by “dashed ellipses” in FIG. 1A, and are represented by “solid ellipses” in FIG.
Unlike the solder ball 2 a protruding from the bottom surface of the semiconductor device 2, the solder ball 5 has a larger diameter. The diameter of the solder ball 5 is larger than the thickness (height) dimension of the entire semiconductor device 2. The upper ends of the multilayer wiring substrates 1 are projected upward from the upper surface of the semiconductor device 2.

  Although the diameter of the solder ball 5 is larger than the diameter of the through hole 4, the solder balls 5 are not in contact with each other when connected to the through hole 4. That is, the electrical equipment 10 assembled as described later is accommodated in a heating furnace and heated, and the distance between the through holes 4 and the solder balls is adjusted so that the distance between the solder balls 5 becomes 1 mm or less when the heating is completed. A diameter of 5 is set.

  One top plate member 6 is supported across all the solder balls 5. As can be seen from FIG. 1A, a plurality of solder balls 5 are positioned along each side of the top plate member 6 formed in a rectangular shape in plan view. Then, due to the magnitude relationship between the diameter of the solder ball 5 and the thickness dimension of the semiconductor device 2, the top plate member 6 covers the upper part of the semiconductor device 2 with a gap.

The top plate member 6 is composed of a rectangular flat resin material 6a and a conductive metal film 6b that covers the entire lower surface of the flat resin material 6a. That is, since the top plate member 6 has conductivity, it is hereinafter referred to as a “conductive top plate”.
A solid pattern made of the metal film 6 b is formed on the entire lower surface of the conductive top plate 6. As shown in FIG. 1B, the metal film 6b constituting the conductive top plate 6 is covered with a solder resist film 7, and an electrode pad 8 formed as an opening only at a position facing the through hole 4 is provided. It is done. The electrode pads 8 are represented by “solid circles” in FIG. 1A, and are represented by “cuts” in the solder resist film 7 in FIG. 1B.

  The center position of the conductive top plate 6 substantially coincides with the center position of the semiconductor device 2, and the peripheral surface of the conductive top plate 6 protrudes from the peripheral surface of the semiconductor device 2 by the same dimension. In other words, the conductive top plate 6 has a similar shape to the semiconductor device 2, and the area of the conductive top plate 6 is formed larger than the area of the semiconductor device 2.

As described above, the solder balls 2a protruding from the bottom surface of the semiconductor device 2 are used to mount the semiconductor device 2 on the multilayer wiring board 1, and the conductive top plate 6 is attached to the multilayer wiring board 1 as well. Solder balls 5 are used.
Therefore, according to the solder characteristics, the semiconductor device 2 and the conductive top plate 6 are positioned on the multilayer wiring board 1 and placed in a heating furnace to melt both the solder balls 2a and 5 simultaneously. Alternatively, the solder ball 2 a is first melted to mount the semiconductor device 2 on the multilayer wiring board 1, and then the solder ball 5 is melted to attach the conductive top plate 6 to the multilayer wiring board 1.

  In a state where the semiconductor device 2 is mounted on the multilayer wiring board 1, a narrow gap exists between the bottom surface of the semiconductor device 2 and the surface of the multilayer wiring board 1 as in the conventional structure. On the other hand, when the solder ball 5 having a diameter of 0.65 mm is selected and the solder ball 5 is melted, the dimension is such that a gap of about 0.4 mm exists between the multilayer wiring board 1 and the conductive top plate 6. It is set.

  Further, the distance between each through-hole 4 and the electrode pad 8 is set so as not to form a so-called bridge shape in which adjacent solder balls 5 contact each other in a melted state. Actually, the gap between the melted solder balls 5 is set to 1 mm or less from conditions such as the diameter and weight of the solder balls 5, the heating temperature in the heating furnace, and the area weight of the conductive top plate 6.

  The reason why the gap between the solder balls 5 in the molten state is 1 mm or less will be described later. Using this gap, the molten resin material 9 is injected between the surface of the wiring board 1 and the bottom surface of the semiconductor device 2 to underfill. Even after a sufficient amount of underfill is made between the multilayer wiring board 1 and the semiconductor device 2, the injection of the resin material 9 is continued.

  The resin material 9 is filled in the gap between the metal film 6 b on the bottom surface of the conductive top plate 6 and the top surface of the semiconductor device 2, and is also filled between the outer peripheral surface of the semiconductor device 2 and the peripheral surface of the conductive top plate 6. . When the injection of the resin material 9 is stopped in this state, as a result, the resin material 9 is filled over the entire peripheral surface of the semiconductor device 2, and the semiconductor device 2 is resin-sealed.

  Therefore, the mounting strength of the semiconductor device 2 with respect to the multilayer wiring board 1 is increased. Since the resin material 9 is also filled between the multilayer wiring board 1 and the conductive top plate 6, the mounting strength of the conductive top plate 6 to the multilayer wiring board 1 is increased. In FIG. 1 (B), the resin material 9 is projected from the circumferential surface of the conductive top plate 6, but actually, it is sufficient to fill the gap between the solder balls 5, and from the circumferential surface of the conductive top plate 6. Does not protrude.

  In this way, the multilayer wiring board 1 on which the semiconductor device 2 is mounted, the plurality of through holes 4 provided in the multilayer wiring board 1 with a predetermined interval and connected to the ground pattern 3, and the through holes 4 are connected. A plurality of solder balls 5 arranged so as to surround the periphery of the semiconductor device 2 and a conductive top plate 6 that is electrically connected to the solder balls 5 and covers the upper surface of the semiconductor device 2. Composed.

  The solder balls 5 are electrically connected to the conductive top plate 6 through the ground pattern 3 and the through holes 4 of the multilayer wiring board 1. In other words, electrical conduction between the conductive top plate 6 and the ground pattern 3 of the multilayer wiring board 1 is achieved by the through holes 4 and the solder balls 5.

  The electromagnetic wave emitted from the semiconductor device 2 is shielded (shielded) by the metal film 6b covering the entire lower surface of the conductive top plate 6, and further shielded by the solder balls 5 to which the conductive top plate 6 is attached. Since the gap between adjacent solder balls 5 is set to 1 mm or less, electromagnetic waves do not leak from this gap for the reason described later.

  The conductive top plate 6 has a relatively high flatness by covering the entire lower surface of the resin material 6a with the metal film 6b. On the other hand, the multilayer wiring board 1 is literally formed in multiple layers and has a certain degree of plate thickness to obtain high flatness. In a state where the conductive top plate 6 is attached to the multilayer wiring board 1, the gaps between them become uniform, and an unsoldered portion unlike the conventional structure hardly occurs.

  Even if the conductive top plate 6 is deformed for some reason and the flatness accuracy is lowered, the solder ball 5 absorbs the deformation of the conductive top plate 6 as it melts. That is, if the deformation of the conductive top board 6 is within a certain range, the gap between the conductive top board 6 and the multilayer wiring board 1 is within a certain range with the conductive top board 6 attached to the wiring board 1. Can be secured.

  The distance M1 from the peripheral surface of the semiconductor device 2 to the mounting width by the solder balls 5 may be the same as the minimum necessary distance between electronic components mounted on the wiring board 1. If the distance M1 is referred to as an “inter-component mounting prohibited area”, the area width M1 may be 0.2 mm. Further, the mounting width M <b> 2 of the conductive top plate 6 by the solder ball 5 may be 0.65 mm, which is the same as the diameter of the solder ball 5.

As a result, the conductive top plate 6 has a total of 0.2 mm which is the inter-component mounting prohibited area M1 and 0.65 mm which is the mounting width M2 of the conductive top plate 6 by the solder balls 5 from the peripheral surface of the semiconductor device 2. The area protrudes by 0.85 mm.
In the electric device Q having the conventional structure shown in FIG. 6, as described above, it protrudes 3 mm from the peripheral surface of the semiconductor device b. Since it is 0.85 mm in the present invention, the size can be greatly reduced as compared with the conventional structure.

Further, the resin material 9 for underfilling the semiconductor device 2 on the multilayer wiring board 1 is used as it is for increasing the mounting strength of the conductive top plate 6 to the multilayer wiring board 1. This resin material 9 may be filled between the semiconductor device 2 and the conductive top plate 6 to secure an underfill prohibited area necessary for leaching outward from the peripheral surface of the semiconductor device as in the conventional structure. No need.
The area occupied by the electric device 10 composed of the solder balls 5 and the conductive top plate 6 is minimized, and the miniaturization of the electric device 10 such as a mobile phone including the plurality of semiconductor devices 2 can be surely promoted.

The reason why leakage of electromagnetic waves can be prevented while the gap between adjacent solder balls 5 is 1 mm or less in a state where the solder balls 5 are melted can be explained from the graph showing the shielding effect (shielding amount) in FIG.
In this graph, the horizontal axis represents the size (mm) of the slit corresponding to the gap between the solder balls 5, and the vertical axis represents the frequency (dB) of a signal used in an electrical device on which the semiconductor device 2 is mounted.

Specifically, the shield amount S of the rectangular slit vacated on the infinite plane metal plate is shown,
S = 20 log (λ / 2 / d)
It is calculated from the formula of
Note that λ = C / f, λ: wavelength, C: luminous flux, and f: frequency.
d: The longer dimension when the slit is rectangular.
The graph represents the slit size versus the shield amount when d << λ / 2.

The frequency of the signal used varies depending on the type and application of the electric device. Therefore, as shown in the figure, 100 MHZ was measured as a La change, 1 GHZ as an Lb change, 2 GHZ as an Lc change, and 5 GHZ as an Ld change, respectively, for each signal frequency.
The shielding effect (dB) required for any electrical device must be at least 30 dB from experience. Preferably, a higher shielding effect is desired.
From the results shown in the figure, it can be seen that the shield effect (dB) is larger when the frequency of the signal is longer even if the slit size is the same, and the shield effect is reduced as the frequency is shortened.

  In the case of the cellular phone which is the above-described electric device, an extremely short wavelength radio wave having a frequency of 5 GHz is used. And as mentioned above, we want to ensure a shielding effect of 30 dB or more, so when we read the size of the slit on the horizontal axis where the 5 GHz line (Ld change) intersects the 30 dB line in the vertical axis shielding effect, It is about 1mm ".

  That is, the molten solder balls 5 to which the conductive top plate 6 is attached to the multilayer wiring board 1 are set so that the gap between the adjacent solder balls 5 is 1 mm or less. Therefore, electromagnetic waves do not leak from the gaps between the adjacent solder balls 5, and a shielding effect can be ensured without affecting the surrounding electrical components such as semiconductor devices.

FIGS. 2A and 2B are a schematic plan view and a cross-sectional view of a thick semiconductor device 2A and an electric device 10A mounted on the multilayer wiring board 1 in the second embodiment of the present invention. The same components as those in the first embodiment are denoted by the same reference numerals, and a new description is omitted.
Then, the wiring pattern H, the ground pattern 3, and the through hole 4 formed on the wiring substrate 1, the solder resist film 7 and the electrode pad 8 formed on the conductive top plate 6A, the multilayer wiring substrate 1, the semiconductor device 2A, and The resin material 9 for underfilling the conductive top plate 6A is omitted. (same as below)
This embodiment has no change in the area occupied by the electric device 10A, but is particularly effective when the thick semiconductor device 2A is used. That is, if the thick semiconductor device 2A is covered with the conductive top plate 6 with the configuration in the first embodiment, the overall thickness becomes thick, and the effect of reducing the area of the electric device 10 is achieved. It will cancel out.

Therefore, as described below, the height of the electric device 10A is reduced.
That is, the conductive top plate 6A may have the same thickness and the same area as described above, and the inter-component mounting prohibited area M1 is 0.2 mm and the mounting width M2 is 0.65 mm. After that, all the inside from the inter-component mounting prohibited area M1 on the lower surface of the conductive top plate 6A is countersunk to provide the recessed portion 12 on the lower surface of the conductive top plate 6A.

  Of course, the entire surface of the recessed portion 12 is covered with the metal film 6b. After mounting the semiconductor device 2 </ b> A on the multilayer wiring board 1, the upper end portion of the thick semiconductor device 2 </ b> A is inserted into the recessed portion 12 with the recessed portion 12 in the conductive top plate 6 </ b> A being the lower surface side.

  In the electric device 10A including the conductive top plate 6A and the solder balls 5, the same shielding effect as that of the first embodiment is obtained. Then, the height dimension of the electric device 10A from the wiring board 1 to the upper surface of the conductive top plate 6A is lowered by the amount that the semiconductor device 2A is inserted into the recessed portion 12 of the conductive top plate 6A. You can get a low profile.

FIGS. 3A and 3B are a schematic plan view and a cross-sectional view of the thick semiconductor device 2A and the electric device 10B mounted on the wiring board 1 in the third embodiment of the present invention.
This embodiment also applies to the thick semiconductor device 2A, although there is no change in the area occupied as the electric device 10B. However, since the process of providing the recessed portion 12 on the conductive top plate 6A as described in the second embodiment takes time, it is not necessary.

In the basic configuration in which the thick semiconductor device 2A is covered with the flat conductive top plate 6 attached via the solder ball 5, the solder ball 5 is originally larger in diameter as the semiconductor device 2A becomes thicker. Must be used.
However, if the mutual distance between the through holes 4 provided in the multilayer wiring board 1 is changed, a significant design change is made and it is necessary to remanufacture from the multilayer wiring board 1, so that at least the mutual distance between the through holes 4 cannot be changed.

  Therefore, even if it is going to connect the solder ball 5 with a large diameter to each of the through holes 4 that do not change the mutual interval, the solder ball 5 is spherical, so the most protruding portion is the most protruding portion of the adjacent solder ball 5 Cannot be connected to the through hole 4.

  Even if the solder balls 5 having a diameter in a range where they do not come into contact are used, the solder balls 5 become large, so that it is necessary to readjust the heating temperature and the heating time, which is troublesome. There is almost no possibility that the solder balls 5 can be bridged with each other in the melted state and the gap between them can be reduced to 1 mm or less.

  Therefore, the electrical device 10B can be thickened to some extent by eliminating the need for recess processing on the conductive top plate 6 and using the solder balls 5 as they are without changing the mutual interval between the through holes 4. Will be described with reference to FIGS. 3 (A) and 3 (B).

  Specifically, the thick semiconductor device 2A is mounted on the multilayer wiring board 1 by the same means. On the other hand, the spacer is made of a metal piece having the same width dimension as the mounting width M2 and a thickness dimension corresponding to the difference in thickness between the normal semiconductor device 2 and the thick semiconductor device 2A. 15 is prepared and pre-attached (soldered) to the multilayer wiring board 1.

  A pad is provided on the upper surface of the spacer 15, the solder ball 5 is joined thereto, and the conductive top plate 6 is attached via the solder ball 5. The spacer 15 is electrically connected to the ground pattern via the through hole, and is electrically connected to the conductive top plate 6 via the solder ball 5. Therefore, electrical conduction between the conductive top plate 6 and the ground pattern of the multilayer wiring board 1 is obtained by the through hole, the spacer 15 and the solder ball 5.

  In the completed electrical device 10B, the spacer 15 and the plurality of solder balls 5 surround the semiconductor device 2A, and the conductive top plate 6 covers the semiconductor device 2A. It is unavoidable that the electrical device 10B becomes thicker by the thickness of the spacer 15, that is, the difference in thickness between the normal semiconductor device 2 and the thick semiconductor device 2A.

  However, since it is not necessary to change the interval between the through holes 4, the solder balls 5 and the conductive top plate 6 as well as the multilayer wiring substrate 1 can be used as they are. In addition, the gap between the solder balls 5 is surely 1 mm or less in the molten state, and the electromagnetic wave generated from the semiconductor device 2A is surely shielded so as not to leak to the outside.

4A and 4B are a schematic plan view and a cross-sectional view of the semiconductor device 2 and the electric device 10C mounted on the multilayer wiring board 1 according to the fourth embodiment of the present invention.
In this embodiment, the present invention is applied to the normal type semiconductor device 2 described in the first embodiment. Further, as the electrical device 10C, the electromagnetic wave generated from the semiconductor device 2 is reliably shielded, but this thinning is realized.

  That is, the electrical device 10C includes a multilayer wiring board 1 having a ground pattern and a through hole and mounting the semiconductor device 2, a solder ball 5, and a conductive top plate 6C described later. The multilayer wiring board 1 and the solder balls 5 are as described above. The conductive top plate 6 </ b> C here is made of a metal plate having good conductivity.

  Therefore, the metal conductive top plate 6C is thinner than the conductive top plate 6 described above, and not only the processing of the metal film 6b covering the flat resin material 6a is unnecessary, but also the electrical device 10C is short. Can be obtained. However, the conductive top plate 6C is heavier than the conductive top plate 6 and is inevitably expensive as a part cost.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above-described embodiments.

1 is a plan view and a cross-sectional view of a semiconductor device mounted on a wiring board and an electric device that shields the semiconductor device according to a first embodiment of the present invention. The semiconductor device mounted in the wiring board based on 2nd Embodiment in this invention, and the top view and sectional drawing of an electric equipment which shield this semiconductor device. The top view and sectional drawing of the semiconductor device mounted on the wiring board based on the 3rd Embodiment in this invention, and the electric equipment which shields this semiconductor device. The semiconductor device mounted in the wiring board based on 4th Embodiment in this invention, and the top view and sectional drawing of an electric equipment which shield this semiconductor device. The characteristic figure of a slit size vs. shield amount. The semiconductor device mounted in the wiring board of the prior art example of this invention, and a partial cross section figure of the shield board attached.

Explanation of symbols

  2 ... Semiconductor device (electric part), H ... Wiring pattern, 3 ... Ground pattern, 1 ... Multi-layer wiring board, 4 ... Through hole, 5 ... Solder ball, 6 ... Conductive top plate (top plate member), 9 ... ( Resin material to be underfilled, 12... Recessed portion, 15. Spacer, 6 a. Flat plate made of resin, 6 b. Metal film, 6 C, conductive top plate made of metal.

Claims (6)

A multilayer wiring board having a wiring pattern to which electrical components are connected on one side and a ground pattern on the other side;
A plurality of through holes provided between the ground pattern and the peripheral part of the electrical component on one surface of the multilayer wiring board, with a predetermined interval between them;
A plurality of solder balls disposed so as to surround the electrical component, each electrically connected to the through hole;
An electrical apparatus comprising: a top plate member that is electrically connected to the solder balls and covers the electrical components.   The electrical apparatus according to claim 1, wherein a resin material is filled in a gap between the electrical component and the multilayer wiring board and a gap between the multilayer wiring board and the top plate member.   The electrical apparatus according to claim 1, wherein the top plate member has a recessed portion into which a part of the electrical component is inserted.   A conductive spacer between the one surface of the multilayer wiring board and the solder ball is electrically connected to the top plate member via the solder ball and electrically connected to the ground pattern via the through hole. The electrical device according to claim 1, wherein the electrical device is interposed.   The top plate member includes a flat plate made of a synthetic resin material and a conductive metal film that covers one surface of the flat resin material, and the metal film is connected to the solder balls. The electric device according to any one of claims 1 to 4.   The electric device according to any one of claims 1 to 4, wherein the top plate member is made of a conductive metal plate.

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