JP2009027080A - Structure of semiconductor apparatus and its welding sealing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To optimize the electrode of a non-cylindrical package. <P>SOLUTION: The structure of the semiconductor apparatus pressurizes a rectangular hermetic package by two electrodes facing each other, and at least one of the electrodes is provided with a suppressing means for suppressing an energizing route for performing energizing. The rectangular hermetic package equalizes the melting conditions of a long side and a short side that the projection of the rectangular hermetic package has. Thus, the electrodes of the rectangular hermetic package are optimized by suppressing the energizing route of the electrodes and equalizing the melting conditions of the long side and short side of the projection part without changing existing equipment and an existing method. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a structure of a semiconductor device and a method for welding and sealing the semiconductor device, and more particularly to a structure of a semiconductor device for welding a rectangular hermetic package that requires hermetic sealing and a method for welding and sealing the semiconductor device.

  Conventionally, a high-quality semiconductor device using a metal as an airtight casing has a cylindrical shape with priority given to airtightness. A specific example of this cylindrical semiconductor device is shown in FIG.

  The semiconductor device having the cylindrical shape shown in FIG. 10 has a mechanically advantageous shape in applying a projection resistance welding method capable of instantaneously completing metal welding.

  This is because a semiconductor device having a cylindrical shape forms and maintains a stable internal space as a bonded state of the CAP and the base.

  Some of the semiconductor devices (such as crystal resonators) have an oval shape (FIG. 11) having a long side of about 10 mm.

  And these projection parts for the purpose of airtightness and shielding only do not require shape accuracy as much as molding and have a wide range of welding work conditions, so even if rough welding work is performed, there is no problem in practical use Don't be.

Here, Patent Documents 1 and 2 relate to projection welding.
Japanese Utility Model Publication No. 63-145589 Japanese Utility Model Publication No. 5-65485

  In contrast to these semiconductor devices, the millimeter-wave band devices and the like with high functionality have a high aspect ratio shape with a short side of only about 10 mm, whereas the long side has a length of more than 50 mm. (FIG. 12).

  This is a shape for using fc (cut-off frequency) in the required electrical characteristics. In order to satisfy the required high frequency characteristics, the millimeter wave band device has a more accurate shape than the cylindrical device. The restriction (after airtight welding) is also added.

  FIG. 13 is a cross-sectional view of a millimeter wave band device, and FIG. 14 is a cross-sectional view of a cylindrical semiconductor device.

  Here, in the related projection resistance welding method (FIG. 15), a melting bias occurs due to the location (short side with respect to the center of the long side), and not only cannot be secured, but also the shield cannot be maintained. It was.

  Further, even with the parallel gap seam weld method and the laser weld method, which are metal herme methods that have been adopted so far, the herme in the millimeter wave band device cannot be realized.

  Also, the ideal welding method is to apply the projection weld method that completes the work instantly to the millimeter wave band device, but unlike the cylindrical device, the rectangular projection has the same height all around. And it was technically difficult to mold into a shape.

  In addition, the millimeter wave band device is inevitably required to have a small shape of the projection portion, and the difficulty is further increased.

  As described above, in the millimeter wave band device, shape accuracy after welding is required, the shape of the projection part is low, and only a thin protrusion shape is allowed. There was a problem that the projection resistance welding method could not be applied (FIG. 16).

  Further regarding the millimeter wave band device, FIG. 17 shows that the structure of the device to be hermet 26 and the welding electrodes 27 and 28 is such that the applied force and energization current are increased in the projection portion 24 on the long side and the short side with a high aspect ratio. In both heat generation and heat dissipation characteristics, extreme unevenness occurs.

  Therefore, this state becomes an obstacle at the time of resistance welding, and welding cannot be performed uniformly over the entire periphery of the projection part 24, which causes a hermetic seal (FIG. 17).

  In addition, for millimeter-wave device packages that consist of two or more components and are rectangular due to high-frequency characteristics constraints, the higher the operating frequency, the more the propagation wave feedback in the waveguide mode is suppressed in the spatial region of the package. In addition, the width is narrow and the aspect ratio tends to be larger.

  In addition, the projection resistance welding method, which cannot be repaired, must be completed in a single step of a series of pressurization, energization, and cooling, compared to a cylindrical hermetic package that is relatively easy to implement. The extreme rectangular shape is a practical problem.

  In addition, if the current path during welding and the heat generation / heat radiation path of the welded part are examined when joining, if no measures are taken (Fig. 17), the balance is extremely different between the short side and the long side. Yes.

  For example, in the case of welding connection of a cylindrical package (FIG. 10) established technically as an example, the cylindrical package is uniform in terms of pressure, energization, and heat dissipation, but in the rectangular package (FIG. 12) Even when an electrode using a copper alloy with good conductivity is used, a high current of 20 KA or more instantaneously flows during operation.

  In addition, for rectangular packages where the energization current path has a large difference between the center and the peripheral edge, the projection length is 3 to 5 times (same energization current), and welding conditions for pressurization, heat generation, and heat dissipation As a result of the balance being lost, excessive welding occurs only in the center and the end portion is not welded.

  Furthermore, the worse the condition is, the worse the condition balance (pressurization, energization current, heat dissipation, etc.) in the welding zone is, the worse the rectangular shape (especially when the aspect ratio is high).

  In other words, non-uniform welding suggests that airtightness is not maintained, and it is not a desirable result because it leads to abnormal deformation of the package.

  For this reason, in the related projection resistance welding method, when this irregular shaped projection part is to be hermetically sealed, it is possible to hermetically seal simply by enlarging the protrusion shape and enlarging the energizing current and the applied pressure as measures to relax the welding conditions. There was a problem that could not be done.

  Further, as shown in FIG. 18, in this millimeter wave band device, there is a problem that the application of the projection seal method is made more difficult because the hermetic device 26 is restricted in shape.

  Here, the A direction and the B direction in FIG. 18 refer to directions when the user observes the A and B directions indicated by arrows with respect to the millimeter-wave band device described in FIG. 17, and will be described later. Similarly, in the drawing, observation is made in the A direction and the B direction in FIG.

  Furthermore, in order to reduce (suppress) the stress to the glass terminal part 23 (FIG. 13) which adjoins, there also exists a problem that welding cannot be accelerated | stimulated by a huge energizing current.

  Here, when considering the projections described in Patent Documents 1 and 2, Patent Document 1 describes that the header bears the energization path, and Patent Document 2 describes that the electrode is provided with a step. ing.

  However, none of the patent documents describes that the energization path through which the electrodes are energized is suppressed and the melting conditions on the long side and the short side of the projection part are equalized.

  Therefore, the present invention has been made in view of the above problems, and without restricting the existing equipment and existing construction method, while suppressing the energization path through which the electrodes are energized, the long side and the short side of the projection unit An object of the present invention is to provide a structure of a semiconductor device that can optimize the electrodes of a rectangular hermetic package by equalizing the melting conditions, and a welding and sealing method thereof.

  The structure of the semiconductor device according to the present invention is a structure of a semiconductor device in which a rectangular hermetic package is pressurized with two electrodes facing each other, and at least one of the electrodes includes suppression means for suppressing an energization path for energization, The rectangular hermetic package is characterized by equalizing the melting conditions of the long side and the short side of the projection of the rectangular hermetic package.

  A method for welding and sealing a semiconductor device according to the present invention is a method for welding and sealing a semiconductor device in which a rectangular hermetic package is pressurized with two electrodes facing each other, wherein at least one of the electrodes has a current-carrying path. The suppressing step of suppressing, and the rectangular hermetic package includes an equalizing step of equalizing the melting conditions of the long side and the short side of the projection of the rectangular hermetic package.

  According to the present invention, the structure of the semiconductor device intentionally adjusts the energization path by suppressing the energization path through which the electrode is energized and equalizing the melting conditions on the long side and the short side of the projection part. Therefore, it is possible to realize a semiconductor device structure capable of optimizing the electrodes of the rectangular hermetic package and a method for welding and sealing the semiconductor device.

  In the embodiment according to the present invention, the existing current electrode is provided with obstacles such as slits in order to control the welding state for each portion of the projection welding in order to control the welding current for each part of the projection welding. The electrical resistance and heat dissipation path can be adjusted intentionally without changing the equipment and construction method, and the electrodes can be optimized (FIG. 1).

  Similarly, by optimizing the shape including the height and width for the purpose of intentionally controlling the welding state for each part in the projection shape of the projection part on the hermetic device side, It is possible to achieve equalization of the melting conditions.

  Here, an example in the case of welding a projection part is shown in FIG.2 and FIG.3.

  2 and 3, the height of the welded part is h1 and h2, and the width is w1 and w2.

  Thus, the projection shape (FIGS. 2 and 3) and the electrode shape (FIG. 1) can alleviate the required accuracy of manufacturing.

  Therefore, in this embodiment, projection hermes can be performed with dimensional accuracy required to seal a millimeter-wave band device having a high aspect ratio using existing equipment without providing any special equipment. It is characterized by.

  In the embodiment, a millimeter wave band device will be described. However, the present embodiment is not limited to this, and may be applied to a terahertz band device, a sub millimeter wave band device, or the like.

  Next, embodiments according to the present invention will be described with reference to the drawings.

(1) Structure of a semiconductor device for welding a rectangular hermetic package FIG. 1 shows a structure of a semiconductor device for welding a rectangular hermetic package including a workpiece and a welding electrode.

  The semiconductor device for welding the rectangular hermetic package shown in FIG. 1 is formed so that the electrode 1 and the electrode 2 sandwich the hermetic device 3.

  Moreover, the electrode 1 and the electrode 2 are provided with the adjustment groove | channel 4 equivalent to a slit, a hole, a digging.

  The projection portions on the long side and the short side of the high aspect ratio that are the welded portions do not produce the same results in heat generation / heat radiation amount, applied pressure, and energization current amount.

  Therefore, in order to solve this problem, the energization path is extended by providing slits, holes, digging, etc. in the vicinity of the center of the electrode 1 and electrode 2 where the energization and heat dissipation paths are short and are over-welded. By extending the path, the pressure balance on the short side and the equalization of the welded state are realized.

  Here, FIG. 4 shows a schematic diagram of the electrode 2 provided with the Herme device 3 having the long side 5 and the short side 6.

  In the schematic diagram shown in FIG. 4, a slit, a hole (corresponding to the adjustment groove 4 in FIG. 1) is provided on the electrode-side energization path, so that the long side 5 and the short piece 6 are welded at the projection portion. It is possible to optimize the electrical resistance, heat generation and heat dissipation paths while achieving balance.

  FIG. 5 and FIG. 6 show an embodiment in which optimization is achieved in the schematic diagram shown in FIG.

  5 and 6 include an electrode 1, a hermetic device 3, and an adjustment groove 4.

  The difference between FIG. 5 and FIG. 6 is that the shape of the adjustment groove 4 is different, and the shape of the adjustment groove 4 can be changed to a slit, a hole, a digging or the like according to desired characteristics.

  5 and FIG. 6 show an embodiment optimized with the electrode 1, which is not limited to the electrode 1, and may be similarly optimized with the electrode 2.

  Moreover, the equalization of a molten state is implement | achieved by adjusting similarly to the projection part (FIG.2 and FIG.3) by the side of the to-be-harmed device 3. FIG.

  Moreover, the projection part 7 of the welding part welded to the hermetic device 3 shown in FIG. 7 has an arbitrary height h1, h2 and widths w1, w2, as shown in FIGS. By adjusting the size, it is possible to equalize the molten state.

  Moreover, the electrode 1 which remove | eliminated the to-be-harmed device 3 from FIG.5 and FIG.6 is shown in FIG.8 and FIG.9.

In FIGS. 8 and 9, the shape of the adjustment groove 4 formed on the electrode 1 can be recognized.
(2) Effect of Semiconductor Device for Welding Rectangular Hermetic Package According to the first embodiment, the semiconductor device for welding the rectangular hermetic package can intentionally adjust the electric resistance and heat dissipation path, so that welding is performed. Sometimes it is possible to optimize the electrodes of the rectangular hermetic package.

  Therefore, the projection seal method can be applied to a metal millimeter wave device having a high aspect ratio.

  In addition, the semiconductor device to which this rectangular hermetic package is welded applies the projection seal method to a metal millimeter-wave device with a high aspect ratio by providing a structure whose shape is optimized for the projection part which is the welded part. be able to.

  In addition, due to a synergistic effect obtained by combining the above effects, the projection seal method can be applied to a metal millimeter-wave device having a high aspect ratio without requiring high-precision projection shape processing.

(3) Structure of Semiconductor Device for Welding Rectangular Hermetic Package Next, the structure of the semiconductor device for welding the rectangular hermetic package in Example 2 according to the present invention will be described in detail below.

  In the first embodiment, the adjustment of the energizing current path and the heat radiation path of the welding action is realized by changing the shape of the electrode 1 and the electrode 2 while adjusting the grooves 4 corresponding to slits, holes, digging, etc. It can be realized and applied by adding a material having an equivalent function or a component having an equivalent function different from that of the base material to the hermetic device 3 side.

  In this case, for example, a component including rubber or plastic having low electrical conductivity may be used for the hermetic device 3.

  Furthermore, it can also be applied to the formation of irregularities made of the same material as that of the adjustment groove 4 or when the component parts separated from the base material are additionally processed by a method such as welding, brazing, plating, or adhesion. it can.

  In addition, by optimizing the welding conditions on the electrode side, there is a special synergistic effect that the shape accuracy of the hermetic device side projection part can be relaxed.

1 shows a device structure of a rectangular hermetic package in Example 1 according to the present invention. 2 shows an example of a projection shape in Example 1 according to the present invention. 2 shows an example of a projection shape in Example 1 according to the present invention. It is the schematic of the electrode provided with the to-be-harmed device which has the long side and the short side in Example 1 which concerns on this invention. It is an example of the Example optimized in Example 1 which concerns on this invention. It is a modification of the optimized Example in Example 1 which concerns on this invention. It is an example of the Example which showed the projection part of the to-be-harmed device in Example 1 which concerns on this invention. It is an example of the Example which showed the electrode in which the adjustment groove | channel was given in Example 1 which concerns on this invention. It is a modification of the Example which showed the electrode in which the adjustment groove | channel was given in Example 1 which concerns on this invention. It is the figure which showed the specific example of the package of the semiconductor device which has a cylindrical shape. It is the figure which showed the specific example of the package of the semiconductor device which has an oval shape. It is the figure which showed the specific example of the package of a millimeter wave band device. It is sectional drawing which showed the cross section of the package of a millimeter wave band device. It is sectional drawing which showed the cross section of the package of a cylindrical-shaped semiconductor device. It is a figure explaining the projection sealing condition of the related projection resistance welding method. It is a figure at the time of applying a projection resistance welding method to a cylindrical-shaped semiconductor device and a millimeter wave band device. It is a figure at the time of applying a projection resistance welding method to a millimeter wave band device. It is a figure at the time of applying a projection resistance welding method to a millimeter wave band device.

Explanation of symbols

1, 2 Electrode 3 Hermetic device 4 Adjustment groove 5 Long side 6 Short side 7 Projection part 21 CAP
22 BASE
23 Glass terminal portion 24 Projection portion 25 Internal space 26 Hermet package 27, 28 Electrode h1, h2 Height w1, w2 Width

Claims (6)

In the structure of a semiconductor device in which a rectangular hermetic package is pressurized with two opposing electrodes,
At least one of the electrodes includes a suppression unit that suppresses an energization path for energization,
The rectangular hermetic package is:
A semiconductor device structure characterized by equalizing the melting conditions of the long side and the short side of the projection of the rectangular hermetic package. The suppression means is
The structure of the semiconductor device according to claim 1, wherein at least one of an effective energization current flowing through the energization path of the electrode and heat generated in the electrode is adjusted. The suppression means is
The semiconductor device structure according to claim 1, wherein the energization path is suppressed by any one of a slit, a hole, a groove, a concave portion, or a convex portion. The rectangular hermetic package is:
4. The structure of a semiconductor device according to claim 1, wherein the melting conditions are equalized by changing a shape of the projection between the long side and the short side. 5. The semiconductor device is:
The semiconductor device structure according to claim 1, wherein the semiconductor device structure is a millimeter wave band device which is a millimeter wave band module. A welding sealing method in a semiconductor device in which a rectangular hermetic package is pressurized with two opposing electrodes,
A suppressing step of suppressing an energization path through which at least one of the electrodes is energized;
An equalizing step in which the rectangular hermetic package equalizes the melting conditions of the long side and the short side of the projection of the rectangular hermetic package;
A welding and sealing method comprising:

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