JP2009021552A - Contact hole forming method, conducting post forming method, wiring pattern forming method, multilayered wiring substrate producing method, and electronic apparatus producing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a contact hole forming method excellent in controllability of size. <P>SOLUTION: A method for forming a contact hole CH in an insulating layer Z1 through which an interconnection W1 covered with the insulating layer is connected includes the steps of: forming a liquid-repellent portion HF by applying a liquid droplet FL of a liquid-repellent material having a liquid-repellent property for a liquefied body containing an insulating-layer-forming material at a contact hole forming region DA on the interconnection W1; and forming an insulating layer Z1 by applying a liquid droplet ZL containing the insulating-layer-forming material so as to cover the interconnection W1 except for the liquid-repellent portion HF. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a contact hole forming method, a conductive post forming method, a multilayer wiring board manufacturing method, and an electronic device manufacturing method.

  When a pattern is formed by using a droplet discharge method (inkjet method), a pattern is formed by discharging a liquid droplet (ink) and landing on a predetermined position on a substrate. As described above, when droplets are ejected and landed on the substrate, depending on the characteristics of the substrate surface, the landed droplets may spread out too much or be separated. In this case, there arises a problem that a desired wiring pattern cannot be obtained.

Thus, Patent Document 1 discloses a technique for forming a lyophilic pattern by lyophobic processing the surface to be a pattern forming surface of a substrate and irradiating the lyophobic surface with an ultraviolet laser beam that has passed through a photocatalyst. ing.
Patent Document 2 discloses a technique in which only a light-exposed portion is hydrophilized by applying a water-repellent substrate containing a photocatalyst on a substrate on which a pattern is to be formed, and then exposing through a mask. .

By the way, when the above-described wiring patterns are stacked to take a multilayer wiring structure, the wiring patterns are connected to each other through conductive posts provided in the contact holes. As a technique for forming this conductive post (contact hole), for example, a conductive post (contact hole) non-formation region on the first wiring is coated and cured with a droplet containing an insulating material, and an insulating layer is formed. Techniques for applying and curing droplets containing a conductive material in a post formation region are disclosed (see, for example, Patent Documents 3 and 4).
Japanese Patent Laid-Open No. 2004-200244 JP-A-11-344804 JP 2003-282561 A JP 2006-140437 A

However, the following problems exist in the conventional technology as described above.
Especially in metal wiring, because the surface wettability is good, when a droplet containing an insulating material is applied to a contact hole non-formation region (non-conducting post formation region), the droplet tends to wet and spread. There is a problem that it is difficult to control the (conductive post forming region) to a desired size.
Further, regarding the formation of the wiring pattern, the techniques described in Patent Documents 1 and 2 use an expensive exposure machine, photomask, and laser light source, which causes a problem of increasing costs. In addition, since a liquid repellent material that is originally necessary only for the non-patterned surface is applied to the entire surface of the substrate, it is not desirable from the viewpoint of material saving.

  The present invention has been made in view of the above points, and provides a contact hole forming method, a conductive post forming method, a multilayer wiring board manufacturing method, and an electronic device manufacturing method excellent in size controllability. For the purpose.

  Another object of the present invention is to provide a contact hole forming method, a conductive post forming method, a wiring pattern forming method, a multilayer wiring board manufacturing method, and an electronic device manufacturing method capable of forming the above-mentioned high-quality pattern without increasing the cost. Is to provide.

In order to achieve the above object, the present invention employs the following configuration.
The contact hole forming method of the present invention is a method of forming a contact hole for connecting through an insulating layer to a wiring covered with an insulating layer, wherein the insulating layer is formed in the contact hole forming region on the wiring. Forming a liquid repellent part by applying a liquid repellent material droplet having a liquid repellent property to a liquid containing a forming material; and forming the insulating layer so as to cover the wiring except the liquid repellent part And a step of applying a droplet containing a material to form an insulating layer.
Accordingly, in the contact hole forming method of the present invention, when the liquid droplet containing the insulating layer forming material is applied so as to cover the wiring except for the liquid repellent portion, the insulating layer forming material is applied due to the liquid repellency of the liquid repellent portion. Therefore, the contact hole forming region is prevented from being covered with the insulating layer forming material, and the insulating layer is opened with the size of the liquid repellent portion, thereby forming a contact hole in which the wiring is exposed. be able to. Thereby, in this invention, a contact hole can be formed with the outstanding controllability according to the magnitude | size of the liquid repellent part.

In the present invention, a procedure for adjusting the diameter of the contact hole by the discharge amount of the liquid repellent droplets can also be suitably employed.
Accordingly, in the present invention, the diameter of the contact hole can be easily controlled by adjusting the discharge amount of the liquid repellent droplets or the number of discharged droplets when the discharge amount of each droplet is constant. Is possible.

In the present invention, a procedure for removing the liquid repellent portion in the contact hole formation region by oxygen plasma treatment can be employed.
In this case, by adjusting the oxygen plasma treatment time or the UV irradiation treatment time, the liquid repellency (contact angle with respect to the liquid material including the insulating layer forming material) in the liquid repellent part can be controlled.

As said liquid repellent material, the structure containing at least one of a silane compound and a compound which has a fluoroalkyl group is employable. In this case, as the silane compound, a structure that is a self-assembled film can be employed.
In addition, the liquid repellent portion may be formed by a self-assembled film made of a compound having the fluoroalkyl group on the surface of the substrate.
Furthermore, as the liquid repellent material, a configuration containing a fluorine compound can also be employed.

In the present invention, the second repellent liquid repellent property of the liquid containing the wiring forming material is provided in the non-wiring forming region of the wiring forming surface that is lyophilic with respect to the liquid containing the wiring forming material. Forming a wiring liquid-repellent portion by applying a liquid material droplet; and applying the liquid-containing material-containing liquid droplet to the lyophilic portion between the wiring liquid-repellent portions to form the wiring. A procedure having a process can also be suitably employed.
Thus, in the present invention, the liquid containing the wiring forming material repelled by the wiring liquid-repellent portion is applied to the lyophilic portion by applying a droplet containing the wiring forming material to the wiring forming surface having lyophilicity. The wiring according to the arrangement (that is, the arrangement of the liquid repellent part for wiring) can be formed on the wiring forming surface with high accuracy. Further, in the present invention, the liquid repellent part for wiring is patterned by applying droplets containing the second liquid repellent material, which eliminates the need to use an expensive exposure machine, photomask, laser light source, etc. Can be prevented.

Further, the conductive post forming method of the present invention is a method of forming a conductive post that is connected to the wiring covered by the insulating layer through the insulating layer, and the contact hole forming method is performed by the contact hole forming method described above. And a step of applying a droplet containing a conductive material to the formed contact hole to form a conductive post.
Therefore, in the conductive post forming method of the present invention, when the liquid droplet containing the insulating layer forming material is applied so as to cover the wiring in which the liquid repellent portion is formed, the insulating layer forming material is formed by the liquid repellency of the liquid repellent portion. Therefore, the conductive post forming region is prevented from being covered with the insulating layer forming material, and the insulating layer is opened with the size of the liquid repellent portion, thereby forming a contact hole exposing the wiring. be able to. Then, by applying a droplet containing a conductive material, a conductive post connected to the wiring and penetrating the insulating layer can be formed.
Thereby, in this invention, a conductive post can be formed with the outstanding controllability according to the magnitude | size of the liquid repelling part.

Moreover, in this invention, the procedure which has the process of irradiating energy light to the said liquid repellent part can also be employ | adopted suitably.
As a result, in the present invention, after the insulating layer is cured and the liquid repellency of the liquid repellent portion is lowered, the conductive post that connects to the wiring and penetrates the insulating layer is applied by applying a droplet containing a conductive material. Can be formed.

Moreover, in this invention, the procedure which heats at least the said liquid-repellent part and the said conductive post, and has the process of welding the said wiring and the said conductive post can also be employ | adopted suitably.
Thereby, in this invention, it becomes possible to electrically connect a wiring and a conductive post reliably, without preventing conduction | electrical_connection between a wiring and a conductive post by a liquid repellent part.

The wiring pattern forming method of the present invention is a wiring pattern forming method for forming a second wiring connected to a wiring covered with an insulating layer through a contact hole penetrating the insulating layer, A contact hole forming method, a step of forming a contact hole, a step of curing the insulating layer, a step of irradiating the liquid repellent portion and the insulating layer with energy light, and straddling the insulating layer and straddling the contact hole. And a step of forming the second wiring.
Thereby, in this invention, after hardening the insulating layer opened by the magnitude | size of a liquid repellent part, lyophilicity can be provided to these by irradiating energy light to a liquid repellent part and an insulating layer. . Then, by forming the second wiring across the lyophobic portion having the lyophilic property and the insulating layer, the second wiring connected to the wiring through the contact hole having a prescribed size is formed. Can do.

In the above wiring pattern forming method, a procedure for forming the second wiring by applying a droplet containing a conductive material on the insulating layer and the second wiring forming region straddling the contact hole can be suitably employed.
Accordingly, in the present invention, the droplet containing the conductive material is applied on the insulating layer and the second wiring forming region straddling the contact hole by a droplet discharge method, thereby applying the droplet to the contact hole whose size is defined. The wiring and the second wiring can be connected through the conductive material formed.

In the wiring pattern forming method, a step of forming a plating catalyst layer by applying droplets containing a plating catalyst material on the insulating layer and the second wiring formation region straddling the contact hole; A procedure including a step of forming the second wiring on the plating catalyst layer by a plating treatment can also be suitably employed.
Accordingly, in the present invention, the plating catalyst layer is formed on the insulating layer and the second wiring formation region straddling the contact hole by the droplet discharge method, and then the plating treatment is performed on the plating catalyst layer. Two wirings can be deposited, and a dense and highly conductive second wiring connected to the wiring via a conductive material applied to a contact hole having a prescribed size can be formed.

On the other hand, in the method for manufacturing a multilayer wiring board according to the present invention, the first wiring and the second wiring are laminated via an insulating layer, and the first wiring and the second wiring are connected via a contact hole. A method of manufacturing a substrate, wherein the contact hole is formed by the contact hole forming method described above.
Therefore, according to the method for manufacturing a multilayer wiring board of the present invention, it is possible to manufacture a high-quality multilayer wiring board having a contact hole size set with excellent controllability.

The electro-optical device manufacturing method of the present invention is characterized by using the above-described method for manufacturing a multilayer wiring board.
The electronic device manufacturing method of the present invention is characterized in that the above-described manufacturing method of a multilayer wiring board is used.
Accordingly, in the present invention, it is possible to manufacture a high-quality electro-optical device and electronic equipment by having a high-quality multilayer wiring board.

Embodiments of a contact hole forming method, a conductive post forming method, a wiring pattern forming method, a multilayer wiring board manufacturing method, an electro-optical device manufacturing method, and an electronic device manufacturing method according to the present invention will be described below with reference to FIGS. The description will be given with reference.
In each drawing used for the following description, the scale of each member is appropriately changed to make each member a recognizable size.

(Droplet discharge device)
First, a droplet discharge device used in the pattern forming method according to the present embodiment will be described.
FIG. 1 is a schematic configuration diagram of a droplet discharge device.
The droplet discharge device (inkjet device) IJ discharges (drops) droplets from the droplet discharge head onto the substrate P. The droplet discharge head 301, the X-direction drive shaft 304, and the Y-direction A guide shaft 305, a control device CONT, a stage 307, a cleaning mechanism 308, a base 309, and a heater 315 are provided. The stage 307 supports the substrate P on which ink (liquid material) is provided by the droplet discharge device IJ, and includes a fixing mechanism (not shown) that fixes the substrate P at a reference position.

  The droplet discharge head 301 is a multi-nozzle type droplet discharge head having a plurality of discharge nozzles, and the longitudinal direction and the X-axis direction are matched. The plurality of ejection nozzles are provided on the lower surface of the droplet ejection head 301 in the X-axis direction at regular intervals. From the discharge nozzle of the droplet discharge head 301, the ink containing the conductive fine particles described above is discharged onto the substrate P supported by the stage 307.

An X direction drive motor 302 is connected to the X direction drive shaft 304. The X-direction drive motor 302 is a stepping motor or the like, and rotates the X-direction drive shaft 304 when an X-direction drive signal is supplied from the control device CONT. When the X-direction drive shaft 304 rotates, the droplet discharge head 301 moves in the X-axis direction.
The Y-direction guide shaft 305 is fixed so as not to move with respect to the base 309. The stage 307 includes a Y direction drive motor 303. The Y direction drive motor 303 is a stepping motor or the like, and moves a stage 307 in the Y direction when a drive signal in the Y direction is supplied from the control device CONT.

The control device CONT supplies a droplet discharge control voltage to the droplet discharge head 301. Further, a drive pulse signal for controlling movement of the droplet discharge head 301 in the X direction is supplied to the X direction drive motor 302, and a drive pulse signal for controlling movement of the stage 307 in the Y direction is supplied to the Y direction drive motor 303.
The cleaning mechanism 308 is for cleaning the droplet discharge head 301. The cleaning mechanism 308 includes a Y-direction drive motor (not shown). The cleaning mechanism moves along the Y-direction guide shaft 305 by driving the Y-direction drive motor. The movement of the cleaning mechanism 308 is also controlled by the control device CONT.
Here, the heater 315 is means for heat-treating the substrate P by lamp annealing, and performs evaporation and drying of the solvent contained in the liquid material applied on the substrate P. The heater 315 is also turned on and off by the control device CONT.

The droplet discharge device IJ discharges droplets onto the substrate P while relatively scanning the droplet discharge head 301 and the stage 307 that supports the substrate P. Here, in the following description, the X direction is a non-scanning direction, and the Y direction orthogonal to the X direction is a scanning direction.
Therefore, the discharge nozzles of the droplet discharge head 301 are provided side by side at regular intervals in the X direction, which is the non-scanning direction. In FIG. 1, the droplet discharge head 301 is disposed at a right angle to the traveling direction of the substrate P, but the angle of the droplet discharging head 301 is adjusted so as to intersect the traveling direction of the substrate P. It may be. In this way, the pitch between the nozzles can be adjusted by adjusting the angle of the droplet discharge head 301. Further, the distance between the substrate P and the nozzle surface may be arbitrarily adjusted.

FIG. 2 is a cross-sectional view of the droplet discharge head 301.
The droplet discharge head 301 is provided with a piezo element 322 adjacent to a liquid chamber 321 that stores a liquid material (such as wiring ink). The liquid material is supplied to the liquid chamber 321 via a liquid material supply system 323 including a material tank that stores the liquid material.
The piezo element 322 is connected to a drive circuit 324, and a voltage is applied to the piezo element 322 via the drive circuit 324 to deform the piezo element 322, whereby the liquid chamber 321 is deformed and the liquid material is discharged from the nozzle 325. Is discharged.
In this case, the amount of distortion of the piezo element 322 is controlled by changing the value of the applied voltage. Further, the strain rate of the piezo element 322 is controlled by changing the frequency of the applied voltage. Since the droplet discharge by the piezo method does not apply heat to the material, it has an advantage of hardly affecting the composition of the material.

In addition to the electromechanical conversion method, the droplet discharge method includes a charge control method, a pressure vibration method, an electrothermal conversion method, an electrostatic suction method, and the like. In the charge control method, a charge is applied to a material by a charging electrode, and the flight direction of the material is controlled by a deflection electrode and discharged from a nozzle. In addition, the pressure vibration method is a method in which an ultra-high pressure of, for example, about 30 kg / cm ² is applied to the material and the material is discharged to the nozzle tip side. When no control voltage is applied, the material moves straight from the nozzle. When discharged and a control voltage is applied, electrostatic repulsion occurs between the materials, and the materials are scattered and are not discharged from the nozzle.

  In the electrothermal conversion method, a material is rapidly vaporized by a heater provided in a space in which the material is stored to generate bubbles, and the material in the space is discharged by the pressure of the bubbles. In the electrostatic attraction method, a minute pressure is applied in a space in which the material is stored, a meniscus of the material is formed on the nozzle, and an electrostatic attractive force is applied in this state before the material is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of a fluid due to an electric field and a system that uses a discharge spark are also applicable. The droplet discharge method has an advantage that the use of the material is less wasteful and a desired amount of the material can be accurately disposed at a desired position. The amount of one drop of the liquid material (fluid) discharged by the droplet discharge method is, for example, 1 to 300 nanograms.

Next, a method for forming contact holes and conductive posts using the above-described droplet discharge device IJ will be described with reference to FIGS.
Here, as shown in FIG. 3, the case where a multilayer wiring board in which wiring is formed over a plurality of layers is manufactured will be described.

  In the multilayer wiring board CB shown in FIG. 3, a wiring pattern (wiring, first wiring) W1 is formed on a substrate P having at least a surface Pa as a lyophilic portion and having lyophilic properties, and acrylic or the like covers the wiring pattern W1. A wiring pattern (wiring, second wiring) W2 is formed on the formed insulating layer Z1. The wiring patterns W1, W2 are electrically connected by a conductive post DP provided in a contact hole CH that penetrates the insulating layer Z1. Note that the wiring pattern W2 is covered with the insulating layer Z2 and is connected to the wiring patterns stacked in multiple layers by the conductive posts, but the description of the layers after the insulating layer Z2 is omitted here.

  As the substrate P, various materials such as glass, quartz glass, Si wafer, plastic film, metal plate, and polyimide can be used. Also included are those in which a semiconductor film, a metal film, a dielectric film, an organic film or the like is formed as a base layer on the surface of these various material substrates.

First, a method for forming the wiring pattern W1 on the substrate P will be described.
Here, as shown in FIGS. 4A and 4B, a plurality of (in this case, three) liquid-repellent portions H are provided in a streak-like manner with gaps between each other, and a conductive material is provided between these liquid-repellent portions H. A case of forming the conductive wiring pattern W1 will be described. The liquid repellent portion described here indicates a region where the contact angle with respect to a droplet containing a conductive material (hereinafter referred to as a pattern droplet) is a predetermined value or more, and the lyophilic portion is a conductive material. The area | region where the contact angle with respect to the droplet containing is below a predetermined value is shown.
The wiring pattern W1 is formed by applying the above-described wiring pattern ink droplets onto the substrate P, and includes a surface treatment process, a liquid repellent part forming process, a material arranging process, and a heat treatment / light. It consists roughly of processing steps.
Hereinafter, each process will be described in detail.

(Surface treatment process)
In the surface treatment process, the surface Pa of the substrate P is subjected to a cleaning process to improve the lyophilicity.
For example, when the substrate P is a glass substrate, the surface thereof is lyophilic with respect to the wiring pattern forming material (ink), but the lyophilicity is further enhanced by this surface treatment.

Specifically, in the surface treatment process, UV excimer cleaning, low pressure mercury lamp cleaning, O ₂ plasma cleaning, acid cleaning using HF, sulfuric acid, etc., alkali cleaning, ultrasonic cleaning, megasonic cleaning, corona processing Glow cleaning, scrub cleaning, ozone cleaning, hydrogen water cleaning, microbubble cleaning, fluorine cleaning, etc. are performed.

Here, when the contact angle of the surface (lyophilic part) Pa to the pattern droplet exceeds 25 degrees, bulge (droplet accumulation) is likely to occur, and when it is 20 degrees or less, no bulge occurs. Therefore, in this embodiment, the contact angle with respect to the pattern droplets on the substrate surface Pa is set to 20 degrees or less by adjusting the cleaning process conditions.
Specifically, for example, in the case of UV excimer cleaning, the cleaning process can be adjusted by a combination of irradiation time, intensity, wavelength, heat treatment (heating) of UV light (ultraviolet light), etc. For example, in the case of O ₂ plasma cleaning, the lyophilicity (contact angle) can be adjusted by adjusting the plasma treatment time. By this cleaning treatment, even when a foreign matter such as an organic substance adheres to the surface Pa, it can be removed from the surface Pa, and the cleanliness and lyophilicity can be maintained.

(Liquid repellent part forming step)
Subsequently, a liquid repellent portion (liquid repellent for wiring) is formed in a predetermined region (around the region where the pattern W1 is formed; non-wiring region) on the surface (wiring forming surface) Pa of the substrate P subjected to the cleaning processing (lyophilic processing). Part) H is formed.
Specifically, a liquid droplet (hereinafter referred to as a liquid droplet) containing a material (second liquid repellent material) having liquid repellency from the droplet discharge head 301 to the pattern droplets using the above-described droplet discharge device IJ. (Referred to as liquid repellent droplets) and is applied to a predetermined region on the substrate P.

  As the material having liquid repellency, a silane compound, a compound having a fluoroalkyl group, a fluororesin (a resin containing fluorine), and a mixture thereof can be used.
  As a silane compound, (A) General formula (1)
  R¹Si X¹ _mX² _(3-m)... (1)
(Where R1 Represents an organic group, X¹ And X²Is -OR² , -R², -Cl, R² Represents an alkyl group having 1 to 4 carbon atoms, and m is an integer of 1 to 3. 1 type, or 2 or more types of silane compounds (component A) can be used.

In the silane compound represented by the general formula (1), an organic group is substituted on the silane atom, and an alkoxy group, an alkyl group, or a chlorine group is substituted on the remaining bonds. Examples of the organic group R ¹ include, for example, phenyl group, benzyl group, phenethyl group, hydroxyphenyl group, chlorophenyl group, aminophenyl group, naphthyl group, anthrenyl group, pyrenyl group, thienyl group, pyrrolyl group, cyclohexyl group, cyclohexane Hexenyl, cyclopentyl, cyclopentenyl, pyridinyl, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, octadecyl, n- Octyl group, chloromethyl group, methoxyethyl group, hydroxyethyl group, aminoethyl group, cyano group, mercaptopropyl group, vinyl group, allyl group, acryloxyethyl group, methacryloxyethyl group, glycidoxypropyl group, acetoxy group Etc. can be illustrated.
X ¹ is a functional group for forming an alkoxy group, a chlorine group, a Si—O—Si bond, or the like, and is hydrolyzed by water to be removed as an alcohol or an acid. Examples of the alkoxy group include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, a sec-butoxy group, and a tert-butoxy group.
The number of carbon atoms of R ² is preferably in the range of 1 to 4 from the viewpoint that the molecular weight of the alcohol to be desorbed is relatively small, can be easily removed, and the deterioration of the denseness of the formed film can be suppressed.

Examples of the silane compound represented by formula (I) include dimethyldimethoxysilane, diethyldiethoxysilane, 1-propenylmethyldichlorosilane, propyldimethylchlorosilane, propylmethyldichlorosilane, propyltrichlorosilane, propyltriethoxysilane, propyltrimethoxysilane. Methoxysilane, styrylethyltrimethoxysilane, tetradecyltrichlorosilane, 3-thiocyanatepropyltriethoxysilane, p-tolyldimethylchlorosilane, p-tolylmethyldichlorosilane, p-tolyltrichlorosilane, p-tolyltrimethoxysilane, p- Tolyltriethoxysilane, di-n-propyldi-n-propoxysilane, diisopropyldiisopropoxysilane, di-n-butyldi-n-butoxysilane, di-sec Butyldi-sec-butyroxysilane, di-t-butyldi-t-butyloxysilane, octadecyltrichlorosilane, octadecylmethyldiethoxysilane, octadecyltriethoxysilane, octadecyltrimethoxysilane (ODS), octadecyldimethylchlorosilane, octadecylmethyldichlorosilane, octadecylmethoxy Dichlorosilane, 7-octenyldimethylchlorosilane, 7-octenyltrichlorosilane, 7-octenyltrimethoxysilane, octylmethyldichlorosilane, octyldimethylchlorosilane, octyltrichlorosilane, 10-undecenyldimethylchlorosilane, undecyltrichlorosilane , Vinyldimethylchlorosilane, methyloctadecyldimethoxysilane, methyldodecyldiethoxy Run, methyloctadecyldimethoxysilane, methyloctadecyldiethoxysilane, n-octylmethyldimethoxysilane, n-octylmethyldiethoxysilane, triacontyldimethylchlorosilane, triaconyltrichlorosilane, methyltrimethoxysilane, methyltriethoxysilane, methyltri -N-propoxysilane, methylisopropoxysilane, methyl-n-butyroxysilane, methyltri-sec-butyroxysilane, methyltri-t-butoxyxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-n-propoxysilane, ethylisopropoxysilane , Ethyl-n-butyroxysilane, ethyltri-sec-butyloxysilane, ethyltri-t-butyloxysilane, n-propyltri Methoxysilane, isobutyltrimethoxysilane, n-hexyltrimethoxysilane, hexadecyltrimethoxysilane, n-octyltrimethoxysilane, n-dodecyltrimethoxysilane, n-octadecyltrimethoxysilane, n-propyltriethoxysilane, isobutyl Triethoxysilane, n-hexyltriethoxysilane, hexadecyltriethoxysilane, n-octyltriethoxysilane, n-dodecyltrimethoxysilane, n-octadecyltriethoxysilane, 2- [2- (trichlorosilyl) ethyl] pyridine 4- [2- (trichlorosilyl) ethyl] pyridine, diphenyldimethoxysilane, diphenyldiethoxysilane, 1,3- (trichlorosilylmethyl) heptacosane, dibenzyldimethoxysilane, di Benzyldiethoxysilane, phenyltrimethoxysilane, phenylmethyldimethoxysilane, phenyldimethylmethoxysilane, phenyldimethoxysilane, phenyldiethoxysilane, phenylmethyldiethoxysilane, phenyldimethylethoxysilane, benzyltriethoxysilane, benzyltrimethoxysilane, Benzylmethyldimethoxysilane, benzyldimethylmethoxysilane, benzyldimethoxysilane, benzyldiethoxysilane, benzylmethyldiethoxysilane, benzyldimethylethoxysilane, benzyltriethoxysilane, dibenzyldimethoxysilane, dibenzyldiethoxysilane, 3-acetoxypropyl Trimethoxysilane, 3-acryloxypropyltrimethoxysilane, allyltrimethoxysilane, Ryltriethoxysilane, 4-aminobutyltriethoxysilane, (aminoethylaminomethyl) phenethyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl)- 3-aminopropyltrimethoxysilane, 6- (aminohexylaminopropyl) trimethoxysilane, p-aminophenyltrimethoxysilane, p-aminophenylethoxysilane, m-aminophenyltrimethoxysilane, m-aminophenylethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, ω-aminoundecyltrimethoxysilane, amyltriethoxysilane, benzoxacilepin dimethyl ester, 5- (bicycloheptenyl) trieth Sisilane, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, 8-bromooctyltrimethoxysilane, bromophenyltrimethoxysilane, 3-bromopropyltrimethoxysilane, n-butyltrimethoxysilane, 2-chloro Methyltriethoxysilane, chloromethylmethyldiethoxysilane, chloromethylmethyldiisopropoxysilane, p- (chloromethyl) phenyltrimethoxysilane, chloromethyltriethoxysilane, chlorophenyltriethoxysilane, 3-chloropropylmethyldimethoxysilane, 3-chloropropyltriethoxysilane, 3-chloropropyltrimethoxysilane, 2- (4-chlorosulfonylphenyl) ethyltrimethoxysilane, 2-cyanoethyltriethoxysilane, 2 Cyanoethyltrimethoxysilane, cyanomethylphenethyltriethoxysilane, 3-cyanopropyltriethoxysilane, 2- (3-cyclohexenyl) ethyltrimethoxysilane, 2- (3-cyclohexenyl) ethyltriethoxysilane, 3-cyclohexenyl Trichlorosilane, 2- (3-cyclohexenyl) ethyltrichlorosilane, 2- (3-cyclohexenyl) ethyldimethylchlorosilane, 2- (3-cyclohexenyl) ethylmethyldichlorosilane, cyclohexyldimethylchlorosilane, cyclohexylethyldimethoxy Silane, cyclohexylmethyldichlorosilane, cyclohexylmethyldimethoxysilane, (cyclohexylmethyl) trichlorosilane, cyclohexyltrichlorosilane, cyclohexyltri Methoxysilane, cyclooctyltrichlorosilane, (4-cyclooctenyl) trichlorosilane, cyclopentyltrichlorosilane, cyclopentyltrimethoxysilane, 1,1-diethoxy-1-silacyclopent-3-ene, 3- (2,4-dinitrophenyl) Amino) propyltriethoxysilane, (dimethylchlorosilyl) methyl-7,7-dimethylnorpinane, (cyclohexylaminomethyl) methyldiethoxysilane, (3-cyclopentadienylpropyl) triethoxysilane, N, N-diethyl -3-aminopropyl) trimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltriethoxysilane, (furfuryloxymethyl) triethoxy Lan, 2-hydroxy-4- (3-triethoxypropoxy) diphenyl ketone, 3- (p-methoxyphenyl) propylmethyldichlorosilane, 3- (p-methoxyphenyl) propyltrichlorosilane, p- (methylphenethyl) methyl Dichlorosilane, p- (methylphenethyl) trichlorosilane, p- (methylphenethyl) dimethylchlorosilane, 3-morpholinopropyltrimethoxysilane, (3-glycidoxypropyl) methyldiethoxysilane, 3-glycidoxypropyltri Methoxysilane, 1,2,3,4,7,7, -hexachloro-6-methyldiethoxysilyl-2-norbornene, 1,2,3,4,7,7, -hexachloro-6-triethoxysilyl- 2-norbornene, 3-iodopropyltrimethoxylane, 3 -Isocyanatopropyltriethoxysilane, (mercaptomethyl) methyldiethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyldimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3 -Methacryloxypropyltrimethoxysilane, methyl {2- (3-trimethoxysilylpropylamino) ethylamino} -3-propionate, 7-octenyltrimethoxysilane, RN-α-phenethyl-N'-triethoxy Silylpropylurea, S-N-α-phenethyl-N′-triethoxysilylpropylurea, phenethyltrimethoxysilane, phenethylmethyldimethoxysilane, phenethyldimethylmethoxysilane, phenethyl Methoxysilane, phenethyldiethoxysilane, phenethylmethyldiethoxysilane, phenethyldimethylethoxysilane, phenethyltriethoxysilane, (3-phenylpropyl) dimethylchlorosilane, (3-phenylpropyl) methyldichlorosilane, N-phenylaminopropyltrimethoxy Silane, N- (triethoxysilylpropyl) dansilamide, N- (3-triethoxysilylpropyl) -4,5-dihydroimidazole, 2- (triethoxysilylethyl) -5- (chloroacetoxy) bicycloheptane, ( S) -N-triethoxysilylpropyl-O-menth carbamate, 3- (triethoxysilylpropyl) -p-nitrobenzamide, 3- (triethoxysilyl) propylsuccinic anhydride, N- [5- Trimethoxysilyl) -2-aza-1-oxo-pentyl] caprolactam, 2- (trimethoxysilylethyl) pyridine, N- (trimethoxysilylethyl) benzyl-N, N, N-trimethylammonium chloride, phenylvinyldi Ethoxysilane, 3-thiocyanatopropyltriethoxysilane, (tridecafluoro-1,1,2,2, -tetrahydrooctyl) triethoxysilane, N- {3- (triethoxysilyl) propyl} phthalamic acid, (3 3,3-trifluoropropyl) methyldimethoxysilane, (3,3,3-trifluoropropyl) trimethoxysilane, 1-trimethoxysilyl-2- (chloromethyl) phenylethane, 2- (trimethoxysilyl) ) Ethylphenylsulfonyl azide, β-trimeth Sisilylethyl-2-pyridine, trimethoxysilylpropyldiethylenetriamine, N- (3-trimethoxysilylpropyl) pyrrole, N-trimethoxysilylpropyl-N, N, N-tributylammonium bromide, N-trimethoxysilylpropyl-N, N, N-tributylammonium chloride, N-trimethoxysilylpropyl-N, N, N-trimethylammonium chloride, vinylmethyldiethoxylane, vinyltriethoxysilane, vinyltrimethoxysilane, vinylmethyldimethoxysilane, vinyldimethylmethoxysilane , Vinyldimethylethoxysilane, vinylmethyldichlorosilane, vinylphenyldichlorosilane, vinylphenyldiethoxysilane, vinylphenyldimethylsilane, vinylphenyl Tylchlorosilane, vinyltriphenoxysilane, vinyltris-t-butoxysilane, adamantylethyltrichlorosilane, allylphenyltrichlorosilane, (aminoethylaminomethyl) phenethyltrimethoxysilane, 3-aminophenoxydimethylvinylsilane, phenyltrichlorosilane, phenyldimethylchlorosilane , Phenylmethyldichlorosilane, benzyltrichlorosilane, benzyldimethylchlorosilane, benzylmethyldichlorosilane, phenethyldiisopropylchlorosilane, phenethyltrichlorosilane, phenethyldimethylchlorosilane, phenethylmethyldichlorosilane, 5- (bicycloheptenyl) trichlorosilane, 5- (bicyclo Heptenyl) triethoxysilane, 2- (bicycloheptyl) di Methylchlorosilane, 2- (bicycloheptyl) trichlorosilane, 1,4-bis (trimethoxysilylethyl) benzene, bromophenyltrichlorosilane, 3-phenoxypropyldimethylchlorosilane, 3-phenoxypropyltrichlorosilane,
t-butylphenylchlorosilane, t-butylphenylmethoxysilane, t-butylphenyldichlorosilane, p- (t-butyl) phenethyldimethylchlorosilane, p- (t-butyl) phenethyltrichlorosilane, 1,3- (chlorodimethylsilyl) Methyl) heptacosane, ((chloromethyl) phenylethyl) dimethylchlorosilane, ((chloromethyl) phenylethyl) methyldichlorosilane, ((chloromethyl) phenylethyl) trichlorosilane, ((chloromethyl) phenylethyl) trimethoxysilane, Chlorophenyltrichlorosilane, 2-cyanoethyltrichlorosilane, 2-cyanoethylmethyldichlorosilane, 3-cyanopropylmethyldiethoxysilane, 3-cyanopropylmethyldichlorosilane, 3-cyanopropyl Examples include rumethyldichlorosilane, 3-cyanopropyldimethylethoxysilane, 3-cyanopropylmethyldichlorosilane, 3-cyanopropyltrichlorosilane, and the like.

Examples of fluorine-containing silane compounds (liquid repellent silane compounds) include fluorine-containing alkylsilane compounds. That is, it has a structure represented by a perfluoroalkyl structure C _n F _{2n + 1} bonded to Si, and examples thereof include a compound represented by the following general formula (2). In formula (2), n represents an integer from 1 to 18, and m represents an integer from 2 to 6. X ¹ and ^{X 2 -OR 2,} -R 2, shows a -Cl, ^{R 2} contained in ^{X 1} and ^{X 2} represents an alkyl group having 1 to 4 carbon atoms, a is an integer from 1 to 3 is there.

_{C n F 2n + 1 (CH} 2) m SiX 1 a X 2 (3-a) ... (2)
X ¹ is a functional group for forming an alkoxy group, a chlorine group, a Si—O—Si bond, or the like, and is hydrolyzed by water to be removed as an alcohol or an acid. Examples of the alkoxy group include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, a sec-butoxy group, and a tert-butoxy group.
The number of carbon atoms of R ² is preferably in the range of 1 to 4 from the viewpoint that the molecular weight of the alcohol to be desorbed is relatively small, can be easily removed, and the deterioration of the denseness of the formed film can be suppressed.
By using a fluorine-containing alkylsilane compound, each compound is oriented so that a fluoroalkyl group is located on the surface of the film, and a self-assembled film is formed. Thus, uniform liquid repellency is imparted to the surface of the film. be able to.

More specifically, CF ₃ —CH ₂ CH ₂ —Si (OCH ₃ ) ₃ , CF ₃ (CF ₂ ) ₃ —CH ₂ CH ₂ —Si (OCH ₃ ) ₃ , CF ₃ (CF ₂ ) ₅ —CH ₂ CH ₂ —Si (OCH ₃ ) ₃ , CF ₃ (CF ₂ ) ₅ —CH ₂ CH ₂ —Si (OC ₂ H ₅ ) ₃ , CF ₃ (CF ₂ ) ₇ —CH ₂ CH ₂ —Si (OCH ₃₎ ) ₃ , CF ₃ (CF ₂ ) ₁₁ —CH ₂ CH ₂ —Si (OC ₂ H ₅ ) ₃ , CF ₃ (CF ₂ ) ₃ —CH ₂ CH ₂ —Si (CH ₃ ) (OCH ₃ ) ₂ , CF _{3 (CF 2) 7 -CH 2} CH 2 -Si (CH 3) (OCH 3) 2, CF 3 (CF 2) 8 -CH 2 CH 2 -Si (CH 3) (OC 2 H 5) 2, CF ₃ (CF ₂ ) ₈ —CH ₂ CH ₂ —Si (C ₂ H ₅ ) (OC ₂ H ₅ ) _{2 and the} like.

When a fluororesin is used for forming the liquid repellent portion H, a solution obtained by dissolving a predetermined amount of fluororesin in a predetermined solvent is used. Specifically, “EGC1720” manufactured by Sumitomo 3M Limited (0.1% by weight of fluororesin dissolved in HFE (hydrofluoroether) solvent) can be used. In this case, it is possible to adjust the droplet discharge head 301 so that it can be stably discharged by mixing HFE with an alcohol, hydrocarbon, ketone, ether, or ester solvent as appropriate. In addition, as a fluororesin, “Lumiflon” manufactured by Asahi Glass Co., Ltd. (dissolvable in various solvents), “OPTOOL” manufactured by Daikin Industries, Ltd. (solvent: PFC, HFE, etc.), “manufactured by Dainippon Ink & Chemicals, Inc.” “Dick guard” (solvent: toluene, water / ethylene glycol) or the like can be used.
Further, as the resin containing fluorine, F group in the side _{chain, -CF 3, -CF 2 -,} - CF 2 CF 3, - (CF 2) nCF 3, be those containing the -CF 2 CFCl- Is possible.

Then, as shown in FIGS. 5A and 5B, the liquid repellent liquid droplets L containing the above liquid repellent material are continuously discharged from the liquid droplet discharge head 301 to each liquid repellent portion H. .
At this time, in each liquid repellent portion H, the liquid repellent liquid droplet L that has landed on the surface Pa of the substrate P is ejected and applied to a position where adjacent liquid droplets overlap each other. Thereby, each liquid repellent portion H is applied and formed by one scan of the droplet discharge head 301 and the substrate.

Here, as shown in FIG. 4A, the width WA of the wiring pattern W1 is set by the difference between the arrangement pitch HP of the liquid repellent portions H and the width HA of the liquid repellent portions H. Since the arrangement pitch HP is determined as a specification of the wiring pattern W1, the width WA of the wiring pattern W1 depends on the width HA of the liquid repellent portion H. In this embodiment, the width HA of the liquid repellent portion H is managed by the discharge amount of the liquid repellent droplets L discharged from the droplet discharge head 301 and the discharge pitch LP shown in FIG.
Specifically, for example, the discharge amount of the droplet L is set to two (La, Lb, for example, La = 2.5 pl, Lb = 4.5 pl), and the discharge pitch LP is set to 10 for each discharge amount La, Lb. , 20 and 30 μm, the width HA of the liquid repellent portion H formed on the substrate P is held as a table corresponding to the discharge amount and the discharge pitch LP, and the desired width HA is obtained. When the liquid repellent portion H is formed, a discharge amount and a discharge pitch LP corresponding to the width HA are called from the table, and in the liquid repellent droplet discharge step, the liquid discharge is performed at the called discharge amount and discharge pitch LP. The droplet L is discharged.

Then, by pre-drying the liquid-repellent droplets L discharged on the substrate P, the linear liquid-repellent portions H are spaced from each other on the substrate P as shown in FIGS. 6 (a) and 6 (b). It is formed with a thickness of several nanometers to several tens of nanometers.
The liquid repellent portion H uses the liquid repellent material described above to make the contact angle with respect to the pattern droplets 50 degrees or more. Accordingly, the contrast (contact angle difference) between the lyophilic part (surface) Pa and the liquid repellent part H is 30 degrees or more.

(Material placement process)
Next, pattern droplets are ejected between the liquid repellent portions H of the surface Pa of the substrate P to form a wiring pattern W1.
The wiring pattern forming material is generally composed of a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium. In the present embodiment, as the conductive fine particles, for example, metal fine particles containing any one of gold, silver, copper, palladium, nickel, and ITO, these oxides, and conductive polymers and superconductors. Fine particles are used.
These conductive fine particles can be used by coating the surface with an organic substance or the like in order to improve dispersibility.
The particle diameter of the conductive fine particles is preferably 1 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, there is a possibility that clogging may occur in the nozzle of the liquid discharge head described later. On the other hand, if it is smaller than 1 nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of the organic matter in the obtained film becomes excessive.

  The dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, γ- Butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, can be exemplified polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferred from the viewpoints of fine particle dispersibility and dispersion stability, and ease of application to the droplet discharge method (inkjet method). More preferred dispersion media include water and hydrocarbon compounds.

  The surface tension of the conductive fine particle dispersion is preferably in the range of 0.02 N / m to 0.07 N / m. When the liquid is ejected by the ink jet method, if the surface tension is less than 0.02 N / m, the wettability of the ink composition to the nozzle surface increases, and thus flight bending tends to occur, exceeding 0.07 N / m. Since the meniscus shape at the nozzle tip is not stable, it becomes difficult to control the discharge amount and the discharge timing. In order to adjust the surface tension, a small amount of a surface tension regulator such as a fluorine-based, silicone-based, or nonionic-based material may be added to the dispersion within a range that does not significantly reduce the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the liquid to the substrate, improves the leveling property of the film, and helps prevent the occurrence of fine irregularities in the film. The surface tension modifier may contain an organic compound such as alcohol, ether, ester, or ketone, if necessary.

  The viscosity of the dispersion is preferably 1 mPa · s to 50 mPa · s. When a liquid material is ejected as droplets using the inkjet method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of the ink, and if the viscosity is greater than 50 mPa · s, the nozzle hole The clogging frequency of the liquid becomes high, and it becomes difficult to smoothly discharge the droplets.

  Then, as shown in FIGS. 7A and 7B, the pattern droplet WL containing the wiring pattern forming material is continuously discharged from the droplet discharge head 301 into the gap between the liquid repellent portions H. And apply. Specifically, the pattern is formed at a predetermined pitch while relatively moving the droplet discharge head 301 and the substrate P along the length direction (wiring pattern forming direction) of the liquid repellent portion H (lyophilic portion Pa). A plurality of liquid droplets WL are discharged.

  Here, since the surface Pa of the substrate P has a contact angle of 20 degrees or less with respect to the pattern droplet WL, the applied pattern droplet WL repels without being divided or causing a bulge. It spreads between the liquid parts H. Further, since the difference (contrast) in contact angle between the liquid repellent part H and the surface Pa with respect to the pattern liquid droplet WL is 30 degrees or more, the pattern liquid droplet WL is formed on the basis of the difference in wettability. Is repelled from the surface and introduced into the surface Pa between the liquid repellent portions H and collected. As this contrast, 30 degrees or more is sufficient, but it is more preferable that it is 35 degrees or more in consideration of an embodiment described later.

  The liquid repellent part H has a thickness as small as several nanometers to several tens of nanometers, and thus does not have a function as a partition that defines the position of the applied pattern droplet WL. The pattern droplet WL is disposed in the lyophilic portion Pa due to the above-described difference in contact angle (wetting property).

(Heat treatment / light treatment process)
Next, in the heat treatment / light treatment step, the dispersion medium or the coating agent contained in the droplets disposed on the substrate is removed. That is, the liquid material for forming a conductive film disposed on the substrate needs to completely remove the dispersion medium in order to improve electrical contact between the fine particles. Further, when a coating agent such as an organic substance is coated on the surface of the conductive fine particles in order to improve dispersibility, it is also necessary to remove this coating agent.

  The heat treatment and / or light treatment is usually performed in the air, but may be performed in an inert gas atmosphere such as nitrogen, argon, or helium as necessary. The treatment temperature of the heat treatment and / or the light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as the dispersibility and oxidation of the fine particles, the presence and amount of the coating agent, It is determined appropriately in consideration of the heat resistant temperature.

For example, in order to remove the coating agent made of organic matter, it is necessary to bake at about 300 ° C. Moreover, when using a board | substrate, such as a plastic, it is preferable to carry out at room temperature or more and 100 degrees C or less. Here, baking was performed at 250 ° C. for 60 minutes.
The heat treatment and / or light treatment may be performed using lamp annealing in addition to general heat treatment using a heating means such as a hot plate or an electric furnace. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used. These light sources generally have a power output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.
By the heat treatment and / or light treatment, electrical contact between the fine particles is ensured and converted into a conductive film.
The linear wiring pattern W1 shown in FIG. 4A is formed on the substrate P by the series of steps described above.

(Example)
Solvent-metal was glycol-ITO, ether-ITO, glycol-Ni, water-Ag, hydrocarbon-Ag, liquid-repellent part H width HA = 100 μm, wiring pattern W width WA = 40 μm. FIG. 7 shows the relationship among the contact angle, contrast, and drawing result of the liquid repellent part H and the lyophilic part Pa.
As shown in this figure, if the contact angle of the lyophilic part is 20 ° or less, no bulge is generated, and the contact angle of the lyophobic part is 50 ° or more and the contrast is 30 ° or more (preferably 35 ° or more). If so, a good uniform wiring pattern was formed.

Next, a procedure for forming the contact hole CH and the conductive post DP on the wiring pattern W1 will be described with reference to FIG.
First, as shown in FIG. 9A, the above-described liquid is applied to the contact hole formation region (conductive post formation region) DA (location / region where the contact hole CH and conductive post DP are formed later) on the wiring pattern W1. Among the liquid repellent materials described above, the fluororesin (repellent repellent material) has a liquid repellency from the droplet discharge head 301 using the droplet discharge device IJ to the liquid containing the insulating layer forming material of the insulating layer Z1. By applying and drying the droplets FL containing the liquid material, a liquid repellent part (insulating layer liquid repellent part) HF for the liquid containing the insulating layer forming material is formed.

  Here, since the size (diameter) of the liquid repellent portion HF corresponds to the size (diameter) of the conductive post DP to be formed later, the liquid repellent portion HF has a diameter corresponding to the diameter of the conductive post DP to be formed. Form. In the present embodiment, the correlation between the discharge weight of the droplet FL and the diameter after the droplet FL has landed on the wiring pattern W1 (for example, the landing diameter is about 40 μm when the discharge weight is 2 ng and the landing weight is 3 ng). When the liquid repellent portion HF is formed, the discharge weight is obtained from the table according to the size of the conductive post DP to be formed, and the droplet is used as the discharge weight. Discharge FL.

Subsequently, as shown in FIG. 9B, the insulating layer forming material is included so as to cover the wiring pattern W1 except for the liquid repellent portion HF from the droplet discharge head 301 using the above-described droplet discharge apparatus IJ. A droplet ZL (hereinafter referred to as an insulating layer forming droplet ZL) is applied. In this embodiment, the insulating layer forming material includes a material having photocurability. Specifically, the photocurable material of the present embodiment includes a photopolymerization initiator and an acrylic acid monomer and / or oligomer. Generally, this photocurable material may contain a solvent and a resin dissolved in the solvent. Here, the photo-curable material in this case may contain a resin that itself sensitizes to increase the degree of polymerization, or a resin and a photopolymerization initiator that initiates curing of the resin. You may contain. Moreover, it may replace with such a form and may contain the monomer which photopolymerizes and produces | generates an insoluble insulating resin as a photocurable material, and the photoinitiator which starts the photopolymerization of the monomer. However, the photocurable material in this case may not contain a photopolymerization initiator as long as the monomer itself has a photofunctional group.
Further, thermosetting polyimide or the like may be used as the insulating layer forming material.

  The insulating layer forming droplet ZL applied on the wiring pattern W1 is repelled by the liquid repellency of the liquid repellent portion H formed in the contact hole forming area DA, and is not filled in the contact hole forming area DA. And the liquid repellent part HF is exposed, and the contact hole CH is formed in a size defined by the size of the liquid repellent part HF. Thereafter, ultraviolet light (UV light) is irradiated from the surface side of the substrate P to the liquid repellent part HF and the insulating layer Z1 as energy light. As a result, the insulating layer Z1 is cured, and the liquid repellent portion HF is decomposed and removed, or the liquid repellency is lowered. In the case of the liquid repellent part HF formed using a fluororesin, the liquid repellency is lowered according to the irradiation time of the ultraviolet light, but the ultraviolet light is irradiated for a time when the liquid repellency is sufficiently lowered (for example, contact 60 seconds when the angle is 20 ° or less).

Thereafter, using the above-described droplet discharge device IJ, a droplet containing a conductive material, here, a droplet WL used in forming the wiring pattern W1 is applied to the contact hole CH located in the conductive post formation region DA. -By drying, as shown in FIG.9 (c), the conductive post DP is formed. At this time, even if the liquid repellent part HF is not completely removed by ultraviolet light irradiation, the fluororesin is a very small amount of several nm to several tens of nm. The conductive post DP secured a good contact (conduction) with the wiring pattern W1 by a reaction such as partial decomposition when electrical contact by light processing is ensured or by fusion of fine particles as conductive materials. Formed in a state.
And the multilayer wiring board CB which has the wiring pattern W2 etc. which are connected to the conduction | electrical_connection post DP is manufactured by repeating said process by making the surface of the insulating layer Z1 which the conduction | electrical_connection post DP exposes into a wiring formation surface.

  As described above, in the present embodiment, after the liquid repellent portion HF is formed in the contact hole formation region DA on the wiring pattern W1 in advance, the insulating layer forming droplet ZL is applied. Even when wetting and spreading on the pattern W1, the size of the contact hole formation area DA, that is, the size of the contact hole CH and the conductive post DP can be secured and controlled to desired values, and the wiring pattern can be accurately obtained. It becomes possible to manufacture a multilayer wiring board CB on which W1, W2 and conductive posts DP are formed. Further, in the present embodiment, the removal process of the liquid repellent part HF necessary for securing the contact between the conductive post DP and the wiring pattern W1 is performed simultaneously with the curing process of the insulating layer Z1 by irradiation with ultraviolet light. Therefore, it is not necessary to provide a separate processing step, which can contribute to the improvement of productivity.

  In the present embodiment, the diameters of the contact hole CH and the conductive post DP are adjusted by the discharge amount of the liquid repellent droplet FL based on a preset table. It becomes possible to easily and quickly select the discharge amount of the liquid repellent droplet FL set according to the diameter of the DP, which can contribute to further improvement in productivity.

  In addition, in the present embodiment, when the wiring pattern W1 is formed, the liquid repellent portion H is patterned by applying the liquid repellent liquid droplet L to the substrate P having the surface Pa of the lyophilic portion. It is not necessary to use an expensive exposure machine, photomask, laser light source, etc., and it is possible to prevent an increase in cost. In the present embodiment, the width HA of the liquid repellent portion H, that is, the width of the wiring pattern W can be easily adjusted by adjusting the discharge amount and discharge pitch of the liquid repellent droplets L. In particular, in the present embodiment, since a table showing the correlation between the discharge amount and the discharge pitch and the width HA of the liquid repellent portion H is used, the liquid repellent set according to the width WA of the wiring pattern W to be formed. The discharge amount and discharge pitch of the conductive droplet L can be selected easily and quickly, which can contribute to the improvement of productivity.

(Wiring Pattern Forming Method; First Embodiment)
Next, a first embodiment of a wiring pattern forming method will be described with reference to FIG.
10A, in the same manner as the state shown in FIG. 9B, the insulating layer forming droplet ZL is applied so as to cover the wiring pattern W1 except for the liquid repellent portion HF. It is a figure which shows the insulating layer Z1 which was formed and was hardened.
In this figure, the same components as those of the above-described embodiment shown in FIGS. 1 to 9 are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 10A, when the insulating layer Z1 that covers the wiring pattern W1 except for the liquid repellent portion HF is formed, ultraviolet light is used as energy light from the surface side of the substrate P, and the liquid repellent portion HF and the insulating layer are insulated. The layer Z1 is irradiated.
Thereby, the insulating layer Z1 is cured and the upper surface thereof is made lyophilic. At the same time, as shown in FIG. 10B, the liquid repellent part HF is decomposed and removed, or the liquid repellency is lowered. In the case of the liquid repellent portion HF formed using a fluororesin, the liquid repellency is lowered according to the irradiation time of the ultraviolet light, but the ultraviolet light is irradiated for a time when the liquid repellency is sufficiently lowered.
In addition, you may perform another hardening process (for example, heat processing) before the lyophilic process with respect to the insulating layer Z1 mentioned above.

  Thereafter, as shown in FIG. 10C, in the formation region of the wiring pattern W2 over the contact hole CH and the insulating layer Z1, the above-described droplet discharge device IJ is used similarly to the above-described wiring pattern W1. A wiring pattern that is connected to the wiring pattern W1 through the contact hole CH by applying a droplet containing a conductive material, here the droplet WL used in forming the wiring pattern W1, and drying and firing. W2 can be formed.

As described above, also in this embodiment, by using the liquid repellent part HF, the contact hole CH having a size defined by the liquid repellent part HF is formed with high accuracy and connected via the contact hole CH. The formed wiring patterns W1, W2 can be easily formed.
Further, in the present embodiment, it is not necessary to provide a step of separately forming the conductive posts, which can contribute to improvement in manufacturing efficiency.

(Wiring Pattern Forming Method; Second Embodiment)
Next, a second embodiment of the wiring pattern forming method will be described with reference to FIGS.
In the first embodiment of the wiring pattern forming method, the wiring patterns W1 and W2 are formed by applying droplets containing a conductive material. In the second embodiment, the wiring pattern is formed by using a plating process. The case will be described.
In this figure, the same components as those of the above-described embodiment shown in FIGS. 1 to 9 are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 11A, for example, surface cleaning processing such as UV irradiation is performed on the surface Pa of the substrate P formed of PI (polyimide), and then lyophilic processing such as O ₂ plasma processing is performed.
Then, using the above-described droplet discharge device IJ, a droplet containing a plating catalyst material is applied and dried (for example, at 100 ° C. for 15 minutes) on the wiring pattern forming region (first wiring forming region) on the surface Pa. The plating catalyst layer C1 is formed.

As the liquid containing the plating catalyst material, an organic solvent containing a metal having a catalytic action such as Pd, Ni, Ag, Au, Cu, Fe, or Co can be used. Further, the liquid material may have a configuration containing a coupling agent in order to provide adhesion to the substrate P. Examples of the coupling agent include an Si coupling agent having an amino group, which is neutral or acidic, and more preferably a neutral one is used from the viewpoint of reducing damage to the droplet discharge head. preferable.
In this embodiment, palladium (Pd) is used as the plating catalyst material.

Next, an electroless plating treatment is performed to form a conductive layer D1 on the plating catalyst layer C1 as shown in FIG. 11B, and a heat treatment is performed on a hot plate at 120 ° C. for 30 minutes, for example. Thus, the wiring pattern W1 as the second wiring is formed. The electroless plating solution used for the electroless plating treatment is preferably neutral or acidic like the liquid containing the plating catalyst material, and in consideration of damage to the substrate P, a neutral one is used. It is preferable.
As the conductive layer, for example, Ag, Ni, Au, Co, Cu, or Pd can be used. The conductive layer may have a configuration in which a plurality of plating layers are stacked, for example, a configuration in which an Au plating layer is formed on a Cu plating layer.
In this embodiment, Cu (that is, copper plating treatment) is used as the conductive layer forming material.

  Next, the contact hole forming area DA on the wiring pattern W1 is made liquid repellent with respect to the liquid containing the insulating layer forming material of the insulating layer Z1 from the droplet discharging head 301 using the above-described droplet discharging apparatus IJ. The liquid-repellent part (liquid-repellent part for insulating layer) HF with respect to the liquid containing the insulating layer forming material is formed by applying and drying the droplets having the above. Subsequently, using the above-described droplet discharge device IJ, a droplet including an insulating layer forming material (PI, acrylic, epoxy resin, etc.) is applied to cover the wiring pattern W1 except for the liquid repellent portion HF, and a curing process is performed. By applying, the insulating layer Z1 is formed. As this curing treatment, if the insulating layer forming material is a thermosetting material, for example, heat treatment is performed at 200 ° C. for 30 minutes, and if the insulating layer forming material is a photocurable material, for example, UV light is 1000 to 1000. Processing to irradiate 3000 mj is performed.

Thereafter, the surface of the substrate P is subjected to UV irradiation treatment or O ₂ plasma treatment, thereby making the surface of the insulating film Z1 lyophilic and removing the liquid repellent portion HF (liquid repellent content). As shown in FIG. 12A, a contact hole CH that is surrounded by the insulating film Z1 and exposes the wiring pattern W1 is formed.

  Subsequently, using the above-described droplet discharge device IJ, as shown in FIG. 12B, the droplets containing the above-described plating catalyst material (Pd) are separated into two contact holes CH and these two contact holes CH. By patterning and applying to a wiring pattern forming region (second wiring forming region) straddling the insulating layer Z1 between and drying (for example, at 80 ° C. for 5 minutes on a hot plate), the two contact holes CH are filled. At the same time, a plating catalyst layer C2 is formed that is suspended between these contact holes CH.

  When the plating catalyst layer C2 is formed, an electroless plating process is performed to form a conductive layer D2 on the plating catalyst layer C2, as shown in FIG. 12 (c). By performing heat treatment for 30 minutes, a wiring pattern W2 by Cu plating is formed as the second wiring.

  Next, as shown in FIG. 13A, the contact hole forming region DA2 on the wiring pattern W2 is made liquid repellent with respect to the liquid containing the insulating layer forming material by using the above-described droplet discharge device IJ. The liquid-repellent part (liquid-repellent part for insulating layer) HF2 with respect to the liquid containing the insulating layer forming material is formed by applying and drying the droplets having the above. Subsequently, using the above-described droplet discharge device IJ, a droplet containing an insulating layer forming material (PI, acrylic, epoxy resin, etc.) is applied to cover the wiring pattern W2 except for the liquid repellent portion HF2, and applied to the insulating layer. By performing a curing process, the insulating layer Z2 is formed. As this hardening process, the process similar to the hardening process with respect to the insulating layer Z1 can be selected.

Thereafter, the surface of the substrate P is subjected to UV irradiation treatment or O ₂ plasma treatment, thereby making the surface of the insulating film Z2 lyophilic and removing the lyophobic portion HF2 (liquid repellency) contact hole CH2. , Forming a plating catalyst layer C3 by patterning and drying droplets containing a plating catalyst material (Pd), and successively forming a conductive film D3 on the plating catalyst layer C3 by electroless plating treatment, As shown in FIG. 13B, a wiring pattern W3 connected to the wiring pattern W2 through the contact hole CH2 can be formed.

  Next, similarly, as shown in FIG. 13C, by forming a liquid repellent part, forming an insulating layer Z3 in a region excluding the liquid repellent part, making the surface of the insulating layer Z3 lyophilic and removing the liquid repellent part. The contact hole CH3 is formed, the plating catalyst layer C4 is formed by patterning coating and drying of droplets containing a plating catalyst material (Pd), and the conductive film D4 is formed on the plating catalyst layer C4 by electroless plating. Thus, a wiring pattern (pad portion) W4 connected to the wiring pattern W3 through the contact hole CH3 can be formed.

  Thus, in this embodiment, the liquid repellent part formation, the insulating layer formation and the lyophilic process / liquid repellent part removal process, the plating catalyst layer forming process, and the wiring pattern forming process by forming the conductive layer on the plating catalyst layer are performed. By repeating, it is possible to form a contact hole having a size defined by the liquid repellent portion with high accuracy and easily form the wiring patterns W1 to W4 having a laminated structure connected through the contact hole.

  Further, in this embodiment, since the wiring patterns W1 to W4 including the contact hole filling portion are formed by plating, it is possible to form a wiring that is denser and has a lower electrical resistance than the droplet discharge method. It becomes possible.

  In the above embodiment, the liquid repellent part is removed before the patterning application of the droplet containing the plating catalyst material (Pd). For example, the liquid repellent material applied on the wiring formed by the plating process When the film spreads and the film thickness becomes thin, there may be a case where electrical connection with the wiring exposed in the contact hole is possible without performing the removal process of the liquid repellent portion. Therefore, the removal process of the liquid repellent part is not essential, and may be appropriately performed depending on whether or not electrical connection with the wiring exposed in the contact hole is possible.

(Multilayer wiring board)
Next, another embodiment of the multilayer wiring board will be described with reference to FIG.
Here, an example of a multilayer wiring board mounted on a mobile phone will be described.
A multilayer wiring board 500 shown in FIG. 14 is formed by laminating three wiring layers P1, P2, and P3 on a base material 10 made of silicon.
In addition, as a base material 10, various things, such as glass, quartz glass, a metal plate, are mentioned other than that. Further, it includes those in which a semiconductor film, a metal film, an insulating film, an organic film, or the like is formed as a base layer on the surface of these various material substrates.

  In the wiring layer P1, a chip component (electronic component) 20 having an electrode portion 20a and a chip component (electronic component) 21 having an electrode portion 21a are embedded in an insulating film (insulating layer) 13, and an electrode portion is formed on the insulating film 13. The wiring 15 connected to 20a and 21a is formed into a film. The wiring 15 is covered with the first interlayer insulating film 60. In FIG. 10, the wiring 15 located on both sides is connected to through holes (conductive posts) H1 and H2 penetrating the first interlayer insulating film 60, respectively. ing.

Examples of the chip components 20 and 21 include resistors, capacitors, and IC chips. In this embodiment, resistors are used as the chip components 20 and capacitors are used as the chip components 21. Moreover, the chip components 20 and 21 are arrange | positioned on the base material 10 in the state which orient | assigned the electrode parts 20a and 21a upward.
In practice, the electrode portions 20a and 21a are substantially flush with the upper surfaces of the chip components 20 and 21, but are illustrated as protrusions here. Further, the protrusions may be actually formed by discharging conductive ink using a droplet discharge method or the like.

  The insulating films (insulating layers) 13 and 60 are formed by applying an insulating ink (insulating material) using the droplet discharge method by the droplet discharge device IJ described above and curing the insulating ink. It is. As this insulating ink, here, an acrylic photosensitive resin is included as a material having photocurability that cures when light energy is applied and thermosetting property that cures when heat energy is applied. .

  The wiring 15 and the through holes H1 and H2 are formed by discharging conductive ink using a droplet discharge method by the droplet discharge device IJ. In this embodiment, conductive ink containing silver fine particles is used.

  The wiring layer P2 includes an IC chip (electronic component) 70 provided on the first interlayer insulating film 60 and having an external connection terminal 72, a wiring 61 connected to the through hole H1, and the IC chip 70 and the wiring. A second interlayer insulating film 62 covering 61, a through hole H3 connected to the wiring 61 and penetrating the insulating film 62, and a part of the above-described through hole H2 penetrating the insulating film 62.

The second interlayer insulating film 62 is formed of the same material as the insulating films 13 and 60 using the droplet discharge method by the droplet discharge device IJ described above.
Further, the wiring 61 and the through hole H3 are formed of the same material as the wiring 15 and the through holes H1 and H2 by using a droplet discharge method by the droplet discharge device IJ.

  The wiring layer P3 is formed on the insulating film 62 and connected to the terminal 72 and the through hole H2 of the IC chip 70, the wiring 63B connected to the terminal 72 and the through hole H3 of the IC chip 70, and these wirings The third interlayer insulating film 64 covering 63A and 63B, the through hole H4 connected to the wiring 63A and penetrating the insulating film 64, the through hole H5 connected to the wiring 63B and penetrating the insulating film 64, and the insulating film 64 And a chip component (electronic component) 24 connected to the through hole H5 and a chip component (electronic component) 25 provided on the insulating film 64 and connected to the through hole H4.

The third interlayer insulating film 64 is formed of the same material as the insulating films 13, 60 and 62 using the droplet discharge method by the droplet discharge device IJ described above.
Further, the wirings 63A and 63B and the through holes H4 and H5 are formed of the same material as the wirings 15 and 61 and the through holes H1, H2, and H3 using a droplet discharge method by the droplet discharge device IJ.
As the chip components 24 and 25, here, an antenna element and a crystal resonator are mounted, respectively.

In the multilayer wiring board 500 of the present embodiment, the through holes H1 to H5 are formed by the contact hole forming method and the conductive post forming method described above, so that the size of the through hole can be secured and controlled to a desired value. It becomes possible, and it becomes possible to manufacture the multilayer wiring board 500 in which the through-hole was formed with high precision.
By using the above-described wiring pattern forming method without forming a step of separately forming the through hole (conductive post), the contact hole is filled with a wiring pattern forming material when forming the upper wiring pattern. The electrical connection with the lower wiring pattern may be ensured.

(Switching element (TFT element))
Next, an example of a switching element (TFT element) formed using the above-described contact hole forming method, conductive post forming method, and wiring pattern forming method will be described with reference to FIG.
In the present embodiment, a description will be given of a TFT element provided in an organic EL device having a plurality of pixel regions and emitting light in a plurality of emission colors in each pixel region due to different light emission characteristics.

FIG. 15 is an enlarged view of the cross-sectional structure of the display area in the organic EL device 100. FIG. 15 shows three pixel regions A. The organic EL device 100 is configured by sequentially laminating a circuit element unit 214 in which a circuit such as a TFT is formed on a substrate 202 and an EL element unit 211 in which an organic layer (light emitting unit) 110 is formed. Yes.
In the organic EL device 100, light emitted from the organic layer 110 to the substrate 2 side is transmitted through the circuit element unit 214 and the substrate 202 and emitted to the lower side (observer side) of the substrate 202, and the organic layer. Light emitted from 110 to the opposite side of the substrate 202 is reflected by the cathode 212, passes through the circuit element portion 214 and the substrate 202, and is emitted to the lower side (observer side) of the substrate 202.
Note that by using a transparent material for the cathode 212, light can be emitted from the cathode 212 side.

In the circuit element portion 214, a base protective film 202c made of a silicon oxide film is formed on the substrate 202, and an island-shaped semiconductor film 141 made of polycrystalline silicon is formed on the base protective film 202c. Note that a source region 141a and a drain region 141b are formed in the semiconductor film 141 by high-concentration P ion implantation, and a portion where P is not introduced is a channel region 141c.
Further, a transparent gate insulating film 142 covering the base protective film 202c and the semiconductor film 141 is formed in the circuit element portion 214, and a gate electrode made of Al, Mo, Ta, Ti, W, or the like is formed on the gate insulating film 142. 143, and a transparent first interlayer insulating film 144a and a second interlayer insulating film 144b are formed on the gate electrode 143 and the gate insulating film 142. The gate electrode 143 is provided at a position corresponding to the channel region 141c of the semiconductor film 141.

Further, contact holes 145 and 146 connected to the source / drain regions 141a and 141b of the semiconductor film 141 are formed in the first and second interlayer insulating films 144a and 144b, and the contact holes 145 and 146 are formed in the contact holes 145 and 146, respectively. Each is embedded with a conductive material.
On the second interlayer insulating film 144b, a transparent pixel electrode 111 made of ITO or the like is formed by patterning into a predetermined shape, and one contact hole 145 is connected to the pixel electrode 111.
The other contact hole 146 is connected to the power supply line 163.
In this way, in the circuit element portion 14, a thin film transistor (TFT element) 123 connected to each pixel electrode 111 is formed.

The EL element unit 211 includes an organic layer 110 stacked on each of the plurality of pixel electrodes 111... And a bank unit 112 provided between each pixel electrode 111 and the organic layer 110 to partition each organic layer 110. The counter electrode (cathode) 212 formed on the organic layer 110 is mainly used.
Here, the pixel electrode 111 is formed of a transparent conductive material, for example, ITO, and is patterned into a substantially rectangular shape in plan view. A bank portion 112 is provided between the pixel electrodes 111.

The bank part 112 is composed of an inorganic bank layer 112a made of SiO ₂ or the like on the substrate 202 side and an organic bank layer 112b formed on the inorganic bank layer 112a.
The inorganic bank layer 112a is formed so as to ride on the peripheral edge of the pixel electrode 111, and is arranged so that the periphery of the pixel electrode 111 and the inorganic bank layer 112a are planarly overlapped in a plan view. It has a structure. The organic bank layer 112b is also disposed so as to overlap with a part of the pixel electrode 111 in a plan view.
In addition, an opening 112c is formed in the organic bank layer 112b, and a functional layer forming material is disposed in the opening 112c to form a film as will be described later, whereby the organic layer 110 made of the functional layer is formed. It is supposed to be formed. The organic bank layer 112b is formed of a heat resistant and solvent resistant material such as an acrylic resin or a polyimide resin.

  The organic layer 110 is disposed between the pixel electrode (anode) 111 and the counter electrode (cathode) 212, thereby constituting an organic EL element together with the pixel electrode 111 and the counter electrode 212. Here, in the present embodiment, in order to achieve full-color display with different light emission characteristics, an organic EL element that is a pixel R having red light emission characteristics, an organic EL element that is a pixel G having green light emission characteristics, and a blue color And an organic EL element to be a pixel B having the above light emission characteristics.

  In the present embodiment, each of these three types of organic EL elements has a hole injection / transport layer (first organic layer) 151 (151R, 151G, 151B) and a light emitting layer (second organic layer) as the organic layer 110. 150 (150R, 150G, 150B).

  In this embodiment, the contact holes 145 and 146 can be formed using the contact hole forming method or the conductive post forming method described above, and the power supply line 163 connected to the contact hole 146 or the contact hole can be formed. When the pixel electrode 111 connected to the 145 is formed, the above-described wiring pattern forming method can be used.

  Therefore, in the present embodiment, the size of the contact hole can be secured and controlled to a desired value, and the thin film transistor (TFT element) 123 in which the contact hole is formed with high accuracy can be manufactured. .

(Electronics)
Next, specific examples of the electronic device according to the present invention will be described.
FIG. 16A is a perspective view showing an example of a mobile phone. In FIG. 16A, reference numeral 600 denotes a mobile phone body provided with the multilayer wiring board of the above embodiment, and reference numeral 601 denotes a liquid crystal display unit.
FIG. 16B is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 16B, reference numeral 700 denotes an information processing apparatus, 701 denotes an input unit such as a keyboard, 703 denotes an information processing body including the multilayer wiring board of the above embodiment, and 702 denotes a liquid crystal display unit.
FIG. 16C is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 16C, reference numeral 800 denotes a watch body provided with the multilayer wiring board of the above embodiment, and reference numeral 801 denotes a liquid crystal display unit.
Since the electronic devices shown in FIGS. 16A to 16C are manufactured using the multilayer wiring board manufacturing method of the above-described embodiment, the electronic devices have wirings and conductive posts formed with high precision. It becomes possible to manufacture to quality.
In addition, although the electronic device of this embodiment shall be provided with a liquid crystal device, it can also be set as the electronic device provided with other electro-optical devices, such as an organic electroluminescent display apparatus and a plasma type display apparatus.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

  Moreover, in the said embodiment, in order to improve lyophilicity with respect to the board | substrate P, although demonstrated as what implements a washing process as a surface treatment process, it is not limited to this, For example, it is a functional liquid (for pattern A configuration in which a silane coupling agent or a titanium coupling agent exhibiting lyophilicity with respect to (liquid droplets) is applied to the surface Pa, or a configuration in which titanium oxide fine particles are applied may be employed.

It is a schematic block diagram of a droplet discharge apparatus. 2 is a cross-sectional view of a droplet discharge head 301. FIG. It is a schematic block diagram of a multilayer wiring board. It is a figure which shows the liquid-repellent part and wiring pattern which were formed on the board | substrate. It is a figure which shows a pattern formation process. It is a figure which shows a pattern formation process. It is a figure which shows a pattern formation process. It is a figure which shows the relationship between the contact angle of a liquid repellent part and a lyophilic part, contrast, and a drawing result. It is a figure which shows the procedure which forms a conductive post. It is a figure which shows the process of a wiring pattern formation method. It is a figure which shows the process of a wiring pattern formation method. It is a figure which shows the process of a wiring pattern formation method. It is a figure which shows the process of a wiring pattern formation method. It is sectional drawing which shows schematic structure of a multilayer wiring board. 3 is an enlarged view of a cross-sectional structure of a display area in the organic EL device 100. FIG. It is a figure which shows the specific example of an electronic device.

Explanation of symbols

  C1 ... Plating catalyst layer, CB ... Multilayer wiring board, CH ... Contact hole, DA ... Conductive post forming region, DP ... Conductive post, GB ... Frame portion, H ... Liquid repellent portion (wiring repellent portion), HF ... Repellent Liquid part (liquid repellent part for insulating layer), L ... droplet, MS ... mesh part, P ... substrate, Pa ... surface (lyophilic part, wiring formation surface), SL ... electromagnetic wave shield (electro-optical device), W1 ... Wiring pattern (wiring, first wiring), W2 ... Wiring pattern (wiring, second wiring), 100 ... Liquid crystal display device (electro-optical device), 400 ... Non-contact card medium (electronic device), 500 ... Plasma display Device (electro-optical device), 600 ... mobile phone main body (electronic device), 700 ... information processing device (electronic device), 800 ... watch main body (electronic device)

Claims (14)

A method of forming a contact hole for connecting through the insulating layer in the wiring covered with the insulating layer,
Applying a liquid repellent material droplet having a liquid repellent property to a liquid containing an insulating layer forming material in a contact hole forming region on the wiring to form a liquid repellent portion;
Excluding the liquid repellent portion, covering the wiring and applying a droplet containing the insulating layer forming material to form an insulating layer;
A contact hole forming method characterized by comprising: The contact hole forming method according to claim 1,
A contact hole forming method, wherein a diameter of the contact hole is adjusted by a discharge amount of the liquid repellent droplet. The contact hole forming method according to claim 1 or 2,
The contact hole forming method, wherein the liquid repellent material includes at least one of a silane compound and a compound having a fluoroalkyl group. In the contact hole formation method of Claim 3,
The method of forming a conductive post, wherein the silane compound is a self-assembled film. In the contact hole formation method according to any one of claims 1 to 4,
The contact hole forming method, wherein the liquid repellent material contains a fluorine compound. In the contact hole formation method according to any one of claims 1 to 5,
A droplet of the second liquid repellent material having liquid repellency to the liquid containing the wiring formation material is applied to the non-wiring formation region of the wiring formation surface having lyophilicity with respect to the liquid droplet containing the wiring formation material. Applying and forming a wiring liquid-repellent part;
And a step of forming the wiring by applying a droplet containing the wiring forming material to a lyophilic portion between the liquid repellent portions for wiring. A method of forming a conductive post connected to the wiring covered by the insulating layer through the insulating layer,
A step of forming a contact hole by the contact hole forming method according to claim 1;
And a step of forming a conductive post by applying a droplet containing a conductive material to the formed contact hole. In the conductive post formation method according to claim 7,
A method for forming a conductive post, comprising the step of irradiating the liquid repellent part with energy light. In the conductive post formation method according to claim 7,
A method for forming a conductive post, comprising a step of heating at least the liquid repellent portion and the conductive post to weld the wiring and the conductive post. A wiring pattern forming method for forming a second wiring connected to a wiring covered with an insulating layer through a contact hole penetrating the insulating layer,
A step of forming a contact hole by the contact hole forming method according to claim 1;
Curing the insulating layer;
Irradiating the liquid repellent part and the insulating layer with energy light;
Forming a second wiring on the insulating layer and across the contact hole. In the wiring pattern formation method of Claim 10,
A method for forming a wiring pattern, comprising: applying a droplet containing a conductive material to the second wiring formation region on the insulating layer and over the contact hole to form the second wiring. In the wiring pattern formation method of Claim 10,
Forming a plating catalyst layer by applying droplets containing a plating catalyst material on the insulating layer and the second wiring formation region straddling the contact hole;
Forming a second wiring on the plating catalyst layer by a plating process. A first wiring and a second wiring are stacked via an insulating layer, and the first wiring and the second wiring are connected through a contact hole,
A method for manufacturing a multilayer wiring board, wherein the contact hole is formed by the contact hole forming method according to claim 1.   An electronic device manufacturing method using the method for manufacturing a multilayer wiring board according to claim 13.

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