JP2009019225A5 - - Google Patents

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JP2009019225A5
JP2009019225A5 JP2007181256A JP2007181256A JP2009019225A5 JP 2009019225 A5 JP2009019225 A5 JP 2009019225A5 JP 2007181256 A JP2007181256 A JP 2007181256A JP 2007181256 A JP2007181256 A JP 2007181256A JP 2009019225 A5 JP2009019225 A5 JP 2009019225A5
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Japan
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plating solution
copper plating
electroless copper
electroless
film
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JP2007181256A
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JP2009019225A (en
JP5201897B2 (en
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Description

すなわち、本発明は、ニッケル皮膜上にニッケル金属との置換反応によって銅皮膜を形成する無電解銅めっき液であって、前記無電解銅めっき液には、銅の還元剤が非含有であり、前記置換反応を緩和する銅の錯化剤が含有されていると共に、pHが2.0以下であることを特徴とする無電解銅めっき液にある。
また、本発明は、ニッケル皮膜上に銅皮膜を形成する際に、前述した無電解銅めっき液中に前記ニッケル皮膜を浸漬することを特徴とする無電解銅めっき方法でもある。
かかる本発明において、銅の錯化剤として、カルボン酸化合物を好適に用いることができる。特に、カルボン酸化合物として、酒石酸塩を用いるときには、無電解銅めっき液のpHを1.5以下とすること、或いはカルボン酸化合物として、クエン酸塩又はグリシンを用いるときには、無電解銅めっき液のpHを2.0以下とすることによって、添加したカルボン酸化合物を充分に溶解できる。
更に、ニッケル皮膜としては、無電解ニッケルめっきによって形成したニッケル皮膜である場合、本発明を有効に適用できる。
尚、無電解銅めっき液中の銅としては、硫酸銅から由来していることが好ましい。
That is, the present invention is an electroless copper plating solution that forms a copper film by a substitution reaction with nickel metal on the nickel film, and the electroless copper plating solution does not contain a copper reducing agent , The electroless copper plating solution is characterized in that it contains a copper complexing agent that alleviates the substitution reaction and has a pH of 2.0 or less .
Moreover, this invention is also an electroless copper plating method characterized by immersing the said nickel film in the electroless copper plating solution mentioned above when forming a copper film on a nickel film.
In the present invention, a carboxylic acid compound can be suitably used as the copper complexing agent. In particular, when tartrate is used as the carboxylic acid compound, the pH of the electroless copper plating solution is 1.5 or less, or when citrate or glycine is used as the carboxylic acid compound, the electroless copper plating solution By adjusting the pH to 2.0 or less, the added carboxylic acid compound can be sufficiently dissolved.
Furthermore, when the nickel film is a nickel film formed by electroless nickel plating, the present invention can be effectively applied.
The copper in the electroless copper plating solution is preferably derived from copper sulfate.

Claims (7)

ニッケル皮膜上にニッケル金属との置換反応によって銅皮膜を形成する無電解銅めっき液であって、
前記無電解銅めっき液には、銅の還元剤が非含有であり、前記置換反応を緩和する銅の錯化剤が含有されていると共に、pHが2.0以下であることを特徴とする無電解銅めっき液。
An electroless copper plating solution for forming a copper film by a substitution reaction with nickel metal on the nickel film,
Wherein the electroless copper plating solution, copper reducing agent is free, along with a complexing agent of the copper to mitigate the substitution reaction is contained, wherein the pH is 2.0 or less Electroless copper plating solution.
銅の錯化剤が、カルボン酸化合物である請求項1記載の無電解銅めっき液。   The electroless copper plating solution according to claim 1, wherein the copper complexing agent is a carboxylic acid compound. カルボン酸化合物が、酒石酸塩であって、無電解銅めっき液のpHが1.5以下である請求項2記載の無電解銅めっき液。   The electroless copper plating solution according to claim 2, wherein the carboxylic acid compound is a tartrate salt, and the pH of the electroless copper plating solution is 1.5 or less. カルボン酸化合物が、クエン酸塩又はグリシンである請求項2記載の無電解銅めっき液。 The electroless copper plating solution according to claim 2, wherein the carboxylic acid compound is citrate or glycine . ニッケル皮膜が、無電解ニッケルめっきによって形成されている請求項1〜4のいずれか一項記載の無電解銅めっき液。   The electroless copper plating solution according to any one of claims 1 to 4, wherein the nickel film is formed by electroless nickel plating. 無電解銅めっき液中の銅が、硫酸銅から由来している請求項1〜5のいずれか一項記載の無電解銅めっき液。   The electroless copper plating solution according to any one of claims 1 to 5, wherein the copper in the electroless copper plating solution is derived from copper sulfate. ニッケル皮膜上に銅皮膜を形成する際に、前記ニッケル皮膜を請求項1〜6のいずれか一項記載の無電解銅めっき液中に浸漬することを特徴とする無電解銅めっき方法。   When forming a copper film on a nickel film, the said nickel film is immersed in the electroless copper plating solution as described in any one of Claims 1-6, The electroless copper plating method characterized by the above-mentioned.
JP2007181256A 2007-07-10 2007-07-10 Electroless copper plating solution and electroless copper plating method Active JP5201897B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007181256A JP5201897B2 (en) 2007-07-10 2007-07-10 Electroless copper plating solution and electroless copper plating method

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Application Number Priority Date Filing Date Title
JP2007181256A JP5201897B2 (en) 2007-07-10 2007-07-10 Electroless copper plating solution and electroless copper plating method

Publications (3)

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JP2009019225A JP2009019225A (en) 2009-01-29
JP2009019225A5 true JP2009019225A5 (en) 2010-06-17
JP5201897B2 JP5201897B2 (en) 2013-06-05

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Publication number Priority date Publication date Assignee Title
WO2015076549A1 (en) * 2013-11-22 2015-05-28 한국생산기술연구원 Electroless copper plating solution composition and electroless copper plating method using same
JP6270681B2 (en) * 2014-09-29 2018-01-31 学校法人 関西大学 Wiring structure manufacturing method, copper displacement plating solution, and wiring structure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129977A (en) * 1987-11-13 1989-05-23 Hitachi Ltd Copper plating solution
JP3052515B2 (en) * 1991-11-28 2000-06-12 上村工業株式会社 Electroless copper plating bath and plating method
JP3332668B2 (en) * 1994-07-14 2002-10-07 松下電器産業株式会社 Electroless plating bath used for forming wiring of semiconductor device and method for forming wiring of semiconductor device
JP2002180259A (en) * 2000-12-12 2002-06-26 Shipley Co Llc Metal deposition acceleration compound in plating liquid and plating liquid containing the same
JP2002363762A (en) * 2001-06-07 2002-12-18 Naoki Toriyama Electroless plating solution and electroless plating method
JP5188683B2 (en) * 2006-06-12 2013-04-24 パナソニック株式会社 Contact component or battery component material and battery using the same

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