JP2009016491A - Electrode paste, compact electronic component, and method for manufacturing thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide electrode paste, a compact electronic component, and a method for manufacturing thereof which suppresses the generation of burrs and chippings caused by substrate dividing, and can form the compact electronic component having high dimensional accuracy. <P>SOLUTION: In an electrode 13 connected to an external circuit, as a conductive material, Ag, Ag-Pd, Ag-Pt, or Au is contained, further as a frit component, a mixed material composed of MgO, Al<SB>2</SB>O<SB>3</SB>, SiO<SB>2</SB>, CaCO<SB>3</SB>, TiO<SB>2</SB>, CuO and ZnO is contained. The compounding ratio of the frit component is MgO: 0.5-0.8 wt.%, Al<SB>2</SB>O<SB>3</SB>: 5-10 wt.%, SiO<SB>2</SB>: 15-18 wt.%, CaCO<SB>3</SB>: 25-30 wt.%, TiO<SB>2</SB>: 5-8 wt.%, CuO: 10-15 wt.%, and ZnO: 22-25 wt.%. The frit is contained in a proportion of 20-40 wt.% to the whole of the electrode paste. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an electrode paste used for a small electronic component such as a chip resistor formed by dividing a large insulating substrate, a small electronic component using the electrode paste, and a method for manufacturing the same.

  In recent years, electronic components mounted on an electronic circuit board have been downsized as electronic devices such as mobile phones have become smaller and thinner. As a conventional method of manufacturing a small square chip resistor, a large number of resistive elements are arranged in a matrix on a single insulating substrate, electrodes are formed while appropriately dividing them, and plating is further performed. It will be.

As shown in FIG. 4, the conventional small chip resistor 1 is printed with a metal glaze paste such as Ag—Pd or Ag—Pt on the surface of an insulating substrate 2 such as ceramics and fired. A back electrode 4 is formed. Between the surface electrodes 3, a resistance layer 5 is formed by baking a resistance layer paste such as ruthenium oxide (RuO ₂ ) or Ag—Pd, and the resistance layer 5 is covered with a protective coating layer 6 made of glass paste or the like. . Furthermore, end face electrodes 7 made of a conductive paste or the like are formed on both end faces between the front and back electrodes 3 and 4 of the insulating substrate 2. The end face electrode 7 is provided with Ni plating 8 and Sn plating 9 outside thereof.
JP 2006-352020 A

  With the recent miniaturization of electronic circuit boards, the shape and dimensional accuracy of small electronic components have become very important. As a method of dividing a small component, division is performed by dicing, laser scribing, or the like. However, as shown in FIG. 4, the divided chip electronic component has protruding burr b or chipping that is chipped at the time of division. It was easy to occur. In particular, in the case of small electronic components, the mounting efficiency is likely to decrease due to the deterioration of the shape due to burrs and chipping.

  The present invention has been made in view of the above-described background art, and provides an electrode paste, a small electronic component, and a method for manufacturing the same that can suppress the occurrence of burrs and chipping due to substrate division and can form a small electronic component with high dimensional accuracy The purpose is to do.

The present invention includes Ag, Ag—Pd, Ag—Pt, or Au as a conductive material of the electrode, and further includes MgO, Al ₂ O ₃ , SiO ₂ , CaCO ₃ , TiO ₂ , CuO, and ZnO. It is an electrode paste containing a frit component which is a mixed material.

Mixing ratio of the frit _{component, MgO: 0.5~0.8wt%, Al 2} O 3: 5~10wt%, SiO 2: 15~18wt%, CaCO 3: 25~30wt%, TiO 2: 5~ 8 wt%, CuO: 10 to 15 wt%, and ZnO: 22 to 25 wt%.

  Further, the electrode paste is formed by melting, cooling and pulverizing the frit material mixed at the mixing ratio of the above components, and mixing and kneading with the noble metal and organic vehicle which are the conductive materials of the electrode. The frit contains 20 to 40 wt% with respect to the entire electrode paste.

The present invention also includes Ag, Ag—Pd, Ag—Pt, or Au as a conductive material in an electrode connected to an external circuit, and MgO, Al ₂ O ₃ , SiO ₂ , as frit components, It is a small electronic component containing a mixed material composed of CaCO ₃ , TiO ₂ , CuO, and ZnO.

The present invention also includes Ag, Ag—Pd, Ag—Pt, or Au as the conductive material of the electrode, and further includes MgO, Al ₂ O ₃ , SiO ₂ , CaCO ₃ , TiO ₂ , CuO, and ZnO. An electrode paste containing a frit component, which is a mixed material, is printed on a large insulating substrate and baked to form an electrode made of the conductive material and the frit component, and an electronic device connected to the electrode Is provided on the insulating substrate, and then the insulating substrate is divided into individual electronic elements.

  The electrode is a plurality of surface electrodes formed on the insulating substrate, the electronic element is a resistance layer in contact with the surface electrode, and a protective coating layer is formed on the resistance layer, and then divided into individual electronic elements. To do. The electrode paste can be used not only for the front electrode but also for the back electrode.

  In the electrode paste of the present invention, by using a paste containing 20 to 40 wt% of the frit material as the electrode material, it is possible to suppress the occurrence of burrs and chipping in the electrode at the time of division. In addition, the shape of the chip component, in particular, the state of the protective coat layer and the terminal electrode portion on the chip surface becomes uniform, the chip supply by the mounting machine and the mounting mount rate are stabilized, and the mounting efficiency is improved.

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. The small electronic component of this embodiment is for the chip resistor 10, and as shown in FIG. 1, the insulating substrate 12 such as alumina ceramics is coated with Ag, Ag—Pd, Ag—Pt, Alternatively, a front electrode 13 and a back electrode 14 containing Au and containing a mixed material composed of MgO, Al ₂ O ₃ , SiO ₂ , CaCO ₃ , TiO ₂ , CuO, and ZnO as frit components are formed. Between the pair of surface electrodes 13, a resistive paste containing RuO ₂ , Ag—Pd, or the like is baked to form a resistive layer 15.

  Further, a thin protective coating layer 16 made of lead borosilicate glass or the like is formed on the surface of the resistance layer 15 between the pair of surface electrodes 13.

  End face electrodes 17 made of a conductive paste or the like are formed on both end faces between the front and back electrodes 13 and 14 of the insulating substrate 12. The end face electrode 17 is provided with Ni plating 18 and Sn plating 19 outside thereof.

The front and back electrodes 13 and 14 of this embodiment include Ag, Ag—Pd, Ag—Pt, or Au as a conductive material, and further include MgO, Al ₂ O ₃ , SiO ₂ , CaCO ₃ , TiO ₂ , It is formed of an electrode paste containing a frit component which is a mixed material made of CuO and ZnO. This electrode paste, the compounding ratio of the frit _{component, MgO: 0.5~0.8wt%, Al 2} O 3: 5~10wt%, SiO 2: 15~18wt%, CaCO 3: 25~30wt%, TiO ₂ : 5 to 8 wt%, CuO: 10 to 15 wt%, and ZnO: 22 to 25 wt%, and within this blending ratio range, the total is 100 wt%.

  In this electrode paste, the frit mixed at the blending ratio of the above components is once melted, cooled and pulverized, and a conductive material such as Ag, Ag—Pd, Ag—Pt, or Au of a noble metal as an electrode material ( 55 to 75 wt%), an organic vehicle (5 to 20 wt%), and the frit (20 to 40 wt%). The reason for this condition is that when the content of the frit material is less than 20 wt%, the adhesion with the insulating substrate 12 is reduced and the effect of suppressing chipping is poor. Further, if the content exceeds 40 wt%, unevenness is generated on the electrode surface, and the variation of the generated resistance value as the chip resistor 10 increases.

  Next, a manufacturing method of the chip resistor 10 of this embodiment will be described with reference to FIG. In the chip resistor 10 of this embodiment, first, a dividing groove is formed by dicing or laser on a large substrate for dividing a large number of insulating substrates 12 later (S1). Next, the electrode paste for forming the front electrode 13 and the back electrode 14 is printed in a plurality of rows and dried (S2). Thereafter, firing is performed at a temperature of about 850 ° C. (S3).

  Thereafter, a resistor paste for forming the resistance layer 15 is printed between the surface electrodes 13, dried (S4), and baked at a temperature of about 850 ° C. (S5). Furthermore, if necessary, a glass paste such as lead borosilicate glass is applied to the surface of the resistance layer 15 and baked at about 620 ° C. to form a thin undercoat. Thereafter, the resistance layer 15 is laser trimmed to adjust the resistance value (S6). Further, a glass paste is printed on the resistance layer 15 and dried, and then fired at about 600 ° C. to form the protective coating layer 16 (S7).

  Next, it is divided into chip resistors 10 which are individual electronic elements. In the division, one large substrate is primarily divided in parallel with the alignment direction of the surface electrodes 13 at the end portions of the surface electrodes 13 on both sides of the resistance layer 15 to form strips (S8). Thereby, the end surface of the insulating substrate 12 between the front and back electrodes 13 and 14 is exposed. Thereafter, a conductive electrode paste such as a metal glaze paste for the end face electrode 17 is applied to the end face of the insulating substrate 12 and the end face sides of the front and back electrodes 13 and 14, and the protective coating layer 16 and the end face at about 620 ° C. The electrode 17 is fired simultaneously (S9). The electrode paste for forming the end face electrode 17 may be a conventional one.

  Subsequently, the insulating substrate 12 that has been subjected to the primary division is further divided into two in the direction orthogonal to the primary division, and is further divided into chips for each resistance layer 15 (S10). Then, Ni plating 18 and Sn plating 19 are applied to the front and back electrodes 13 and 14 and the end face electrode 17 to form a protective layer by plating (S11).

  According to the chip resistor 10 of this embodiment, since the electrode paste for forming the front and back electrodes 13 and 14 containing the frit material having the above-described component mixture ratio is used, it is compared with FIGS. 3 and 4. Thus, no burr or chipping due to the division occurs on the end face of the substrate, and a large insulating substrate can be divided cleanly. Thereby, even a very small chip resistor can form a part with high dimensional accuracy.

  The small electronic component of the present invention is not limited to a resistor but can be used as an electrode of an electronic element formed by dividing a substrate, such as a capacitor, various sensors, and the like. In addition to the application method, the end surface electrode may be formed by a dip forming method in which the electrode portion is immersed in a conductive paste, a metal is attached to the electrode end surface in a vacuum state, a sputtering method, an ion plating method, or a vapor deposition method. Further, the end face electrode can be formed by a printing method using a film mask and a squeegee. Furthermore, as a method for dividing a large substrate, dicing using a cutter, or dividing using a laser beam or a water jet can be used. Further, a resin paste such as epoxy can be used for the protective coating layer.

  Table 1 shows the result of measuring the height of the burr cross section of the electrode of the chip resistor with the electrode paste containing the frit of the above embodiment up to 15 to 45 wt%. Those containing 45 wt% had poor electrode surface conditions and were rejected as products.

表１より、上記実施形態の成分範囲のフリットを、導電性材料に対して、２０〜４０ｗｔ％含有する電極ペーストにより、バリやチッピングが小さく、寸法精度の良いチップ抵抗器を形成することができることが確かめられた。

From Table 1, it is possible to form a chip resistor with small burrs and chipping and high dimensional accuracy by using an electrode paste containing 20 to 40 wt% of the frit in the component range of the above embodiment with respect to the conductive material. Was confirmed.

It is a partially broken perspective view which shows the chip resistor of one Embodiment of this invention. It is a flowchart which shows the manufacturing process of the chip resistor of this embodiment. It is a longitudinal cross-sectional view of the chip resistor of this embodiment. It is a longitudinal cross-sectional view of the chip resistor using the conventional electrode paste.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Chip resistor 12 Insulating board 13 Front surface electrode 14 Back surface electrode 15 Resistance layer 16 Protective coating layer 17 End surface electrode 18 Ni plating 19 Sn plating

Claims (7)

The conductive material of the electrode is Ag, Ag—Pd, Ag—Pt, or Au, and is a mixed material composed of MgO, Al ₂ O ₃ , SiO ₂ , CaCO ₃ , TiO ₂ , CuO, and ZnO. An electrode paste comprising a frit component. Mixing ratio of the frit _{component, MgO: 0.5~0.8wt%, Al 2} O 3: 5~10wt%, SiO 2: 15~18wt%, CaCO 3: 25~30wt%, TiO 2: 5~ The electrode paste according to claim 1, wherein the electrode paste is 8 wt%, CuO: 10 to 15 wt%, and ZnO: 22 to 25 wt%.   The electrode paste according to claim 3, wherein the frit mixed at the mixing ratio of the components is melted, cooled and pulverized, and mixed and kneaded with a noble metal and an organic vehicle which are conductive materials of the electrode.   The electrode paste according to claim 1, wherein the frit is contained in an amount of 20 to 40 wt% with respect to the entire electrode paste. An electrode connected to an external circuit contains Ag, Ag—Pd, Ag—Pt, or Au as a conductive material, and MgO, Al ₂ O ₃ , SiO ₂ , CaCO ₃ , TiO ₂ as frit components. A small electronic component comprising a mixed material composed of CuO, CuO, and ZnO. The conductive material of the electrode is Ag, Ag—Pd, Ag—Pt, or Au, and is a mixed material composed of MgO, Al ₂ O ₃ , SiO ₂ , CaCO ₃ , TiO ₂ , CuO, and ZnO. An electrode paste containing a frit component is printed on a large insulating substrate and baked to form an electrode composed of the conductive material and the frit component, and an electronic element connected to the electrode is formed on the insulating substrate. A method of manufacturing a small electronic component, comprising: dividing a plurality of the insulating substrates into individual electronic elements after providing a plurality of the electronic substrates. The electrode is a plurality of surface electrodes formed on the insulating substrate, the electronic element is a resistance layer in contact with the surface electrode, and a protective coating layer is formed on the resistance layer, and then divided into individual electronic elements. A method for manufacturing a small electronic component according to claim 6.

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