JP2020198403A5 - - Google Patents
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- JP2020198403A5 JP2020198403A5 JP2019105093A JP2019105093A JP2020198403A5 JP 2020198403 A5 JP2020198403 A5 JP 2020198403A5 JP 2019105093 A JP2019105093 A JP 2019105093A JP 2019105093 A JP2019105093 A JP 2019105093A JP 2020198403 A5 JP2020198403 A5 JP 2020198403A5
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- film resistor
- paste
- mass
- forsterite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000203 mixture Substances 0.000 description 5
- 229910052839 forsterite Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000010304 firing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Description
本発明の厚膜抵抗体用組成物、厚膜抵抗体用ペースト、および厚膜抵抗体は、有害な鉛を含有することなく、抵抗値が高く、かつ、電流ノイズが小さいという、良好な電気的特性を発揮することができるため、従来の鉛を含む厚膜抵抗体用ペーストに代替することで、環境汚染の問題のないチップ抵抗器やハイブリッドＩＣなどの抵抗部品を提供できるため、その工業的価値はきわめて大きい。 The composition for a thick film resistor, the paste for a thick film resistor, and the thick film resistor of the present invention do not contain harmful lead, have a high resistance value, and have a small current noise, and have good electricity. By substituting the conventional paste for thick film resistors containing lead, it is possible to provide resistance parts such as chip resistors and hybrid ICs that do not have the problem of environmental pollution. The target value is extremely large.
以下、本発明の厚膜抵抗体用組成物、厚膜抵抗体用ペースト、および厚膜抵抗体について、詳細に説明する。 Hereinafter, the composition for a thick film resistor, the paste for a thick film resistor, and the thick film resistor of the present invention will be described in detail.
フォルステライトは、その添加により、厚膜抵抗体の抵抗値を上昇させ、かつ、電流ノイズを低減させる機能を発揮する。フォルステライトには、ガラス粒子間に集まった導電粒子同士が焼成工程で起こるガラスの溶融、流動によって凝集するのを低減させる働きがある。フォルステライトは、ガラスと濡れやすく、熱膨張係数が大きいことが、この働きを高めているものと考えられる。 By adding forsterite, the resistance value of the thick film resistor is increased and the current noise is reduced. Forsterite has a function of reducing the aggregation of conductive particles collected between glass particles due to melting and flow of glass that occur in the firing process . It is considered that forsterite is easily wetted with glass and has a large coefficient of thermal expansion, which enhances this function.
まず、厚膜抵抗体用ペーストを基板に塗布する塗布工程を行う。すなわち、アルミナ（Ａｌ２Ｏ３）などのセラミック基板上に銀（Ａｇ）、パラジウム（Ｐｄ）などからなる電極を形成し、その上に、本発明の厚膜抵抗体用ペーストを、スクリーン印刷などの手段により塗布する。 First, a coating step of applying the thick film resistor paste to the substrate is performed. That is, an electrode made of silver (Ag), palladium (Pd) or the like is formed on a ceramic substrate such as alumina (Al 2 O 3 ), and the thick film resistor paste of the present invention is screen-printed on the electrode. Apply by the means of.
［厚膜抵抗体用ペーストの作製］
厚膜抵抗体の目標とする、焼成後の膜厚を７μｍ～９μｍ、面積抵抗値を１０ｋΩ（±２０％）、３３ｋΩ（±２０％）、１００ｋΩ（±２０％）に設定し、二酸化ルテニウム、ガラスフリット、およびフォルステライトを、１７．５質量％、７８．３質量％、および４．２質量％の割合で含有する厚膜抵抗体用組成物：６０質量％と、有機ビヒクル：４０質量％とを混合し、３本ロールミルで混練して、厚膜抵抗体用ペーストを作製した。厚膜抵抗体用組成物の組成を表１に示す。
[Preparation of paste for thick film resistors]
Set the target thickness of the thick film resistor to 7 μm to 9 μm after firing, the area resistance value to 10 kΩ (± 20%), 33 kΩ (± 20%), and 100 kΩ (± 20%), and use ruthenium dioxide. Compositions for thick film resistors containing 17.5% by mass, 78.3% by mass, and 4.2% by mass of glass frit and forsterite: 60% by mass and organic vehicles: 40% by mass. And kneaded with a three-roll mill to prepare a paste for a thick film resistor . The composition of the composition for thick film resistors is shown in Table 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019105093A JP7273266B2 (en) | 2019-06-05 | 2019-06-05 | Composition for thick film resistor, paste for thick film resistor, and thick film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019105093A JP7273266B2 (en) | 2019-06-05 | 2019-06-05 | Composition for thick film resistor, paste for thick film resistor, and thick film resistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020198403A JP2020198403A (en) | 2020-12-10 |
| JP2020198403A5 true JP2020198403A5 (en) | 2022-03-09 |
| JP7273266B2 JP7273266B2 (en) | 2023-05-15 |
Family
ID=73648221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019105093A Active JP7273266B2 (en) | 2019-06-05 | 2019-06-05 | Composition for thick film resistor, paste for thick film resistor, and thick film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7273266B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62216301A (en) * | 1986-03-18 | 1987-09-22 | 昭栄化学工業株式会社 | Resistive compound |
| JPS62229901A (en) * | 1986-03-31 | 1987-10-08 | 株式会社東芝 | Oxide resistance material |
-
2019
- 2019-06-05 JP JP2019105093A patent/JP7273266B2/en active Active
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