JP2009004713A5 - - Google Patents

Download PDF

Info

Publication number
JP2009004713A5
JP2009004713A5 JP2007166863A JP2007166863A JP2009004713A5 JP 2009004713 A5 JP2009004713 A5 JP 2009004713A5 JP 2007166863 A JP2007166863 A JP 2007166863A JP 2007166863 A JP2007166863 A JP 2007166863A JP 2009004713 A5 JP2009004713 A5 JP 2009004713A5
Authority
JP
Japan
Prior art keywords
processing gas
gas supply
supply mechanism
processing
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007166863A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009004713A (ja
JP4900956B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007166863A priority Critical patent/JP4900956B2/ja
Priority claimed from JP2007166863A external-priority patent/JP4900956B2/ja
Priority to US12/127,311 priority patent/US8221581B2/en
Publication of JP2009004713A publication Critical patent/JP2009004713A/ja
Publication of JP2009004713A5 publication Critical patent/JP2009004713A5/ja
Application granted granted Critical
Publication of JP4900956B2 publication Critical patent/JP4900956B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007166863A 2007-06-25 2007-06-25 ガス供給機構及び基板処理装置 Expired - Fee Related JP4900956B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007166863A JP4900956B2 (ja) 2007-06-25 2007-06-25 ガス供給機構及び基板処理装置
US12/127,311 US8221581B2 (en) 2007-06-25 2008-05-27 Gas supply mechanism and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007166863A JP4900956B2 (ja) 2007-06-25 2007-06-25 ガス供給機構及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2009004713A JP2009004713A (ja) 2009-01-08
JP2009004713A5 true JP2009004713A5 (enExample) 2010-06-24
JP4900956B2 JP4900956B2 (ja) 2012-03-21

Family

ID=40135247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007166863A Expired - Fee Related JP4900956B2 (ja) 2007-06-25 2007-06-25 ガス供給機構及び基板処理装置

Country Status (2)

Country Link
US (1) US8221581B2 (enExample)
JP (1) JP4900956B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4900956B2 (ja) * 2007-06-25 2012-03-21 東京エレクトロン株式会社 ガス供給機構及び基板処理装置
JP5328786B2 (ja) * 2008-06-06 2013-10-30 株式会社アルバック 薄膜太陽電池製造装置
JP5697389B2 (ja) * 2010-09-27 2015-04-08 東京エレクトロン株式会社 プラズマエッチング用の電極板及びプラズマエッチング処理装置
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8900402B2 (en) * 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8980046B2 (en) 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
CN103748665B (zh) * 2011-05-10 2016-11-02 朗姆研究公司 具有多个解耦等离子体源的半导体处理系统
US10557190B2 (en) 2013-01-24 2020-02-11 Tokyo Electron Limited Substrate processing apparatus and susceptor
JP6100564B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 基板処理装置及び載置台
JP5963893B2 (ja) * 2015-01-09 2016-08-03 株式会社日立国際電気 基板処理装置、ガス分散ユニット、半導体装置の製造方法およびプログラム
JP6240712B1 (ja) * 2016-05-31 2017-11-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US10217626B1 (en) * 2017-12-15 2019-02-26 Mattson Technology, Inc. Surface treatment of substrates using passivation layers
JP7117734B2 (ja) 2018-12-06 2022-08-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
JP7296829B2 (ja) * 2019-09-05 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置、処理方法、上部電極構造
KR102607844B1 (ko) * 2020-07-10 2023-11-30 세메스 주식회사 기판 처리 장치 및 기판 지지 유닛
TWI802384B (zh) * 2022-04-22 2023-05-11 華景電通股份有限公司 氣簾裝置及透氣組件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3535309B2 (ja) * 1996-04-10 2004-06-07 東京エレクトロン株式会社 減圧処理装置
JP2002252219A (ja) * 2001-02-26 2002-09-06 Tokyo Electron Ltd 成膜装置及び成膜方法
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
JP3982678B2 (ja) 2002-02-27 2007-09-26 東京エレクトロン株式会社 プラズマ処理装置
JP2003332314A (ja) * 2002-05-14 2003-11-21 Tokyo Electron Ltd プラズマ処理装置用電極及びプラズマ処理装置
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
JP2007165512A (ja) * 2005-12-13 2007-06-28 Hitachi High-Technologies Corp プラズマ処理装置
JP4900956B2 (ja) * 2007-06-25 2012-03-21 東京エレクトロン株式会社 ガス供給機構及び基板処理装置

Similar Documents

Publication Publication Date Title
JP2009004713A5 (enExample)
EP1595974A3 (en) Plasma uniformity control by gas diffuser hole design
TWI544972B (zh) 空氣集塵裝置
JP2011508435A5 (enExample)
TW200721316A (en) Substrate processing apparatus, cooling gas feed nozzle and method for manufacturing semiconductor device
WO2009085992A3 (en) Thermal reactor with improved gas flow distribution
MY149412A (en) Venturi cooling system
CA2746909A1 (en) High pressure drop muffling system
WO2013016191A3 (en) Methods and apparatus for the deposition of materials on a substrate
JP2010050439A5 (enExample)
WO2012018448A3 (en) Plasma processing chamber with dual axial gas injection and exhaust
EP2312613A3 (en) Showerhead assembly for plasma processing chamber
KR20000071576A (ko) 가스 처리 장치, 배플 부재 및 가스 처리 방법
CA2627958A1 (en) Turbine component
SG146566A1 (en) Gas flow diffuser
WO2012145492A3 (en) Apparatus for deposition of materials on a substrate
WO2012148801A3 (en) Semiconductor substrate processing system
TW200500492A (en) Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
WO2007145893A3 (en) Full cone air assisted spray nozzle for continuous metal casting cooling
WO2005060021A3 (en) Permeable inlet fuel gas distributor for fuel cells
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
TW200951332A (en) Slit valve having increased flow uniformity
CN102881551B (zh) 具有气流限制机构的等离子体处理系统及其方法
TW200740535A (en) Apparatus and method for photoresist removal processing
WO2008080249A3 (en) Apparatus for gas handling in vacuum processes