JP2008546550A - Cmpのための透過性微細多孔質材料 - Google Patents
Cmpのための透過性微細多孔質材料 Download PDFInfo
- Publication number
- JP2008546550A JP2008546550A JP2008518178A JP2008518178A JP2008546550A JP 2008546550 A JP2008546550 A JP 2008546550A JP 2008518178 A JP2008518178 A JP 2008518178A JP 2008518178 A JP2008518178 A JP 2008518178A JP 2008546550 A JP2008546550 A JP 2008546550A
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- pad substrate
- polishing
- substrate
- thermoplastic polyurethane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012229 microporous material Substances 0.000 title 1
- 238000005498 polishing Methods 0.000 claims abstract description 210
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 239000011148 porous material Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 57
- 229920000642 polymer Polymers 0.000 claims abstract description 49
- 239000007787 solid Substances 0.000 claims abstract description 19
- 239000006260 foam Substances 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 15
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 29
- 239000004433 Thermoplastic polyurethane Substances 0.000 claims description 23
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 230000009477 glass transition Effects 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 13
- 239000002861 polymer material Substances 0.000 abstract description 7
- 239000002952 polymeric resin Substances 0.000 description 40
- 229920003002 synthetic resin Polymers 0.000 description 40
- 239000002904 solvent Substances 0.000 description 21
- 229920002635 polyurethane Polymers 0.000 description 16
- 239000004814 polyurethane Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 239000000975 dye Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 8
- -1 polyethylene Polymers 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 7
- 238000011065 in-situ storage Methods 0.000 description 6
- 230000003993 interaction Effects 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 229920002959 polymer blend Polymers 0.000 description 6
- 229920000098 polyolefin Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 229920000515 polycarbonate Polymers 0.000 description 5
- 238000000518 rheometry Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004677 Nylon Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 229920001778 nylon Polymers 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 238000000071 blow moulding Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000412 polyarylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000011877 solvent mixture Substances 0.000 description 2
- 238000000194 supercritical-fluid extraction Methods 0.000 description 2
- 229920002725 thermoplastic elastomer Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QETOCFXSZWSHLS-UHFFFAOYSA-N 1-azacyclooctadeca-1,3,5,7,9,11,13,15,17-nonaene Chemical compound C1=CC=CC=CC=CC=NC=CC=CC=CC=C1 QETOCFXSZWSHLS-UHFFFAOYSA-N 0.000 description 1
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910013504 M-O-M Inorganic materials 0.000 description 1
- 229930182559 Natural dye Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000001000 anthraquinone dye Substances 0.000 description 1
- 239000012296 anti-solvent Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000008365 aqueous carrier Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 125000001905 inorganic group Chemical group 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000978 natural dye Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001005 nitro dye Substances 0.000 description 1
- 239000001006 nitroso dye Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005580 one pot reaction Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001044 red dye Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000007962 solid dispersion Substances 0.000 description 1
- 239000000988 sulfur dye Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 229920002397 thermoplastic olefin Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/02—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery
- B24D13/12—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery comprising assemblies of felted or spongy material, e.g. felt, steel wool, foamed latex
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
【選択図】図1
Description
Claims (20)
- 微細多孔質ポリマー発泡体を有する化学機械的研磨パッド基材であって、前記微細多孔質ポリマー発泡体の気孔の少なくとも70%が、独立気孔であり、且つ前記微細多孔質ポリマー発砲体が、0.01μm〜10μmの範囲の平均気孔サイズを有する、化学機械的研磨パッド基材。
- 前記微細多孔質ポリマー発泡体が、0.05μm〜5μmの平均気孔サイズを有する、請求項1に記載の研磨パッド基材。
- 前記微細多孔質ポリマー発泡体が、少なくとも105セル/cm3の平均セル密度を有する、請求項1に記載の研磨パッド基材。
- 前記微細多孔質ポリマー発泡体が、95%又はそれ未満の気孔体積を有する、請求項1に記載の研磨パッド基材。
- 前記微細多孔質ポリマー発泡体が、少なくとも0.5g/cm3のパッド密度、及び40%〜93%の範囲の相対密度を有する、請求項1に記載の研磨パッド基材。
- 前記微細多孔質ポリマー発泡体が、75ショアA〜75ショアDの硬さを有する、請求項1に記載の研磨パッド基材。
- Ames法によって5psiで測定したときに、パッド圧縮率(%)のパッド反発率(%)に対する比が、0.01〜1.0である、請求項1に記載の研磨パッド基材。
- 前記ポリマー発泡体が、熱可塑性ポリウレタンを有する、請求項1に記載の研磨パッド基材。
- 前記熱可塑性ポリウレタンが、20,000g/mol〜600,000g/molの範囲の重量平均分子量を有する、請求項8に記載の研磨パッド基材。
- 前記熱可塑性ポリウレタンが、1〜10の範囲の多分散性を有する、請求項9に記載の研磨パッド基材。
- 前記熱可塑性ポリウレタンが、210℃の温度及び2160gの負荷で10分間について、0.1〜30の溶融流れ指数を有する、請求項9に記載の研磨パッド基材。
- 前記熱可塑性ポリウレタンが、25psi〜200,000psiの範囲の曲げ率を有する、請求項9に記載の研磨パッド基材。
- 前記熱可塑性ポリウレタンが、2〜20の範囲のレオロジープロセッシング指数を有する、請求項9に記載の研磨パッド基材。
- 前記熱可塑性ポリウレタンが、20℃〜120℃の範囲のガラス転移温度を有する、請求項9に記載の研磨パッド基材。
- (a)回転する定盤、
(b)請求項1に記載の研磨パッド基材を有する研磨パッド、及び
(c)回転している研磨パッドに接触させることによって研磨する被加工品を保持するキャリア、
を有する、化学機械的研磨装置。 - 前記研磨パッド基材が、熱可塑性ポリウレタンを有する、請求項15に記載の方法。
- (a)中実のポリマーシートがガスで飽和されるまで、高温及び高圧の容器内で、前記ポリマーシートを超臨界ガスと組み合わせること、
(b)圧力を開放して、ガスで飽和した前記ポリマーシートから、微細多孔質ポリマー発泡体を得ること、及び
(c)前記微細多孔質ポリマー発泡体から、研磨パッドを形成すること、
を含む、請求項1に記載の研磨パッド基材を製造する方法。 - 前記ガスが、窒素、二酸化炭素、又はそれらの任意の組み合わせを含有している、請求項17に記載の方法。
- 前記研磨パッド及基材が、熱可塑性ポリウレタンを含む、請求項17に記載の方法。
- 前記熱可塑性ポリウレタンが、20,000g/mol〜600,000g/molの範囲の重量平均分子量を有する、請求項19に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/158,694 US7267607B2 (en) | 2002-10-28 | 2005-06-22 | Transparent microporous materials for CMP |
PCT/US2006/020193 WO2007001699A1 (en) | 2005-06-22 | 2006-05-24 | Tranparent microporous materials for cmp |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008546550A true JP2008546550A (ja) | 2008-12-25 |
JP2008546550A5 JP2008546550A5 (ja) | 2009-07-09 |
Family
ID=37101929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008518178A Pending JP2008546550A (ja) | 2005-06-22 | 2006-05-24 | Cmpのための透過性微細多孔質材料 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7267607B2 (ja) |
EP (1) | EP1915233B1 (ja) |
JP (1) | JP2008546550A (ja) |
KR (1) | KR101265370B1 (ja) |
CN (1) | CN101208180A (ja) |
IL (1) | IL187705A (ja) |
TW (1) | TWI295946B (ja) |
WO (1) | WO2007001699A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016528054A (ja) * | 2013-08-22 | 2016-09-15 | キャボット マイクロエレクトロニクス コーポレイション | 独立気泡構造を有する超高空隙体積研磨パッド |
JP2016533037A (ja) * | 2013-08-22 | 2016-10-20 | キャボット マイクロエレクトロニクス コーポレイション | 多孔質界面および中実コアを備えた研磨パッドならびにその装置および方法 |
JP2019521231A (ja) * | 2016-07-11 | 2019-07-25 | 浙江新恒泰新材料有限公司 | 高倍率の熱可塑性ポリウレタン微細孔発泡シート及びその生産方法 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050276967A1 (en) * | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
JP3754436B2 (ja) * | 2004-02-23 | 2006-03-15 | 東洋ゴム工業株式会社 | 研磨パッドおよびそれを使用する半導体デバイスの製造方法 |
US7438636B2 (en) * | 2006-12-21 | 2008-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
TW200904591A (en) * | 2007-07-18 | 2009-02-01 | Kinik Co | Polishing tool having brazing filler layer made from spraying molding and processing method utilizing the same |
SG172850A1 (en) | 2009-01-05 | 2011-08-29 | Innopad Inc | Multi-layered chemical-mechanical planarization pad |
JP5748747B2 (ja) * | 2009-06-10 | 2015-07-15 | エルジー・ケム・リミテッド | 多孔性シートの製造方法及びこれにより製造された多孔性シート |
KR101217265B1 (ko) | 2009-06-24 | 2012-12-31 | 주식회사 엘지화학 | 다공성 시트의 제조방법 및 이에 의해 제조된 다공성 시트 |
US8162728B2 (en) | 2009-09-28 | 2012-04-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Dual-pore structure polishing pad |
US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
WO2011112352A1 (en) | 2010-03-10 | 2011-09-15 | Dow Global Technologies Llc | Nanoporous polymeric foam having high cell density without nanofiller |
US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
DE102010026722A1 (de) | 2010-07-09 | 2012-01-12 | Ahlbrandt System Gmbh | Vorrichtung zum Modifizieren der Oberfläche von Bahn-, Platten- oder Bogenware |
US9186772B2 (en) | 2013-03-07 | 2015-11-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with broad spectrum, endpoint detection window and method of polishing therewith |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875145B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US10399201B2 (en) | 2014-10-17 | 2019-09-03 | Applied Materials, Inc. | Advanced polishing pads having compositional gradients by use of an additive manufacturing process |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US10821573B2 (en) | 2014-10-17 | 2020-11-03 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
CN113579992A (zh) | 2014-10-17 | 2021-11-02 | 应用材料公司 | 使用加成制造工艺的具复合材料特性的cmp衬垫建构 |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US20160121578A1 (en) * | 2014-10-29 | 2016-05-05 | Nonwoven Networks Llc | High performance moldable composite |
WO2017074773A1 (en) | 2015-10-30 | 2017-05-04 | Applied Materials, Inc. | An apparatus and method of forming a polishing article that has a desired zeta potential |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
KR102629800B1 (ko) | 2016-01-19 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 다공성 화학적 기계적 연마 패드들 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US10259099B2 (en) * | 2016-08-04 | 2019-04-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapering method for poromeric polishing pad |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
KR20210042171A (ko) | 2018-09-04 | 2021-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보한 폴리싱 패드들을 위한 제형들 |
US11813712B2 (en) | 2019-12-20 | 2023-11-14 | Applied Materials, Inc. | Polishing pads having selectively arranged porosity |
US11806829B2 (en) | 2020-06-19 | 2023-11-07 | Applied Materials, Inc. | Advanced polishing pads and related polishing pad manufacturing methods |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN114536212B (zh) * | 2022-01-29 | 2024-02-09 | 浙江环龙新材料科技有限公司 | 一种微孔热塑性聚氨酯抛光垫及其半连续制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003218074A (ja) * | 2001-11-13 | 2003-07-31 | Toyobo Co Ltd | 半導体ウエハ研磨パッド及び半導体ウエハの研磨方法 |
US20030220061A1 (en) * | 2002-05-23 | 2003-11-27 | Cabot Microelectronics Corporation | Microporous polishing pads |
JP2004043768A (ja) * | 2001-12-07 | 2004-02-12 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4138228A (en) | 1977-02-02 | 1979-02-06 | Ralf Hoehn | Abrasive of a microporous polymer matrix with inorganic particles thereon |
US4239567A (en) | 1978-10-16 | 1980-12-16 | Western Electric Company, Inc. | Removably holding planar articles for polishing operations |
JPH01193166A (ja) | 1988-01-28 | 1989-08-03 | Showa Denko Kk | 半導体ウェハ鏡面研磨用パッド |
US5182307A (en) | 1990-11-21 | 1993-01-26 | Board Of Regents Of The University Of Washington | Polyethylene terephthalate foams with integral crystalline skins |
DE4321823C2 (de) * | 1993-07-01 | 1997-03-06 | Telefunken Microelectron | Beleuchtungseinheit für Leuchtschilder |
US5441598A (en) | 1993-12-16 | 1995-08-15 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5684055A (en) | 1994-12-13 | 1997-11-04 | University Of Washington | Semi-continuous production of solid state polymeric foams |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
GB2316414B (en) | 1996-07-31 | 2000-10-11 | Tosoh Corp | Abrasive shaped article, abrasive disc and polishing method |
DE69717465T2 (de) | 1996-08-27 | 2003-07-10 | Trexel Inc | Verfahren und vorrichtung zum extrudieren von polymerschaum, insbesondere mikrozellenschaum |
WO1998028108A1 (en) | 1996-12-20 | 1998-07-02 | Unique Technology International Private Limited | Manufacture of porous polishing pad |
US6022268A (en) | 1998-04-03 | 2000-02-08 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
CN1258241A (zh) | 1997-04-18 | 2000-06-28 | 卡伯特公司 | 用于半导体底物的抛光垫 |
US6235380B1 (en) | 1997-07-24 | 2001-05-22 | Trexel, Inc. | Lamination of microcellular articles |
WO1999032544A1 (en) | 1997-12-19 | 1999-07-01 | Trexel, Inc. | Microcellular foam extrusion/blow molding process and article made thereby |
US6231942B1 (en) | 1998-01-21 | 2001-05-15 | Trexel, Inc. | Method and apparatus for microcellular polypropylene extrusion, and polypropylene articles produced thereby |
GB2334205B (en) | 1998-02-12 | 2001-11-28 | Shinetsu Handotai Kk | Polishing method for semiconductor wafer and polishing pad used therein |
US6248000B1 (en) | 1998-03-24 | 2001-06-19 | Nikon Research Corporation Of America | Polishing pad thinning to optically access a semiconductor wafer surface |
JP2918883B1 (ja) | 1998-07-15 | 1999-07-12 | 日本ピラー工業株式会社 | 研磨パッド |
US6705934B1 (en) | 1998-08-28 | 2004-03-16 | Toray Industries, Inc. | Polishing pad |
US6322347B1 (en) | 1999-04-02 | 2001-11-27 | Trexel, Inc. | Methods for manufacturing foam material including systems with pressure restriction element |
EP1043378B1 (en) | 1999-04-09 | 2006-02-15 | Tosoh Corporation | Molded abrasive product and polishing wheel using it |
US6656018B1 (en) | 1999-04-13 | 2003-12-02 | Freudenberg Nonwovens Limited Partnership | Polishing pads useful in chemical mechanical polishing of substrates in the presence of a slurry containing abrasive particles |
US6146242A (en) | 1999-06-11 | 2000-11-14 | Strasbaugh, Inc. | Optical view port for chemical mechanical planarization endpoint detection |
US6171181B1 (en) | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
JP2001062703A (ja) * | 1999-08-27 | 2001-03-13 | Asahi Chem Ind Co Ltd | 多孔性樹脂窓付き研磨パッド |
US6602064B1 (en) | 1999-08-31 | 2003-08-05 | Trexel, Inc. | Polymer processing system and apparatus |
US20020090819A1 (en) | 1999-08-31 | 2002-07-11 | Cangshan Xu | Windowless belt and method for improved in-situ wafer monitoring |
WO2001023141A1 (en) | 1999-09-29 | 2001-04-05 | Rodel Holdings, Inc. | Polishing pad |
AU2750201A (en) | 1999-11-05 | 2001-05-30 | Trexel, Inc. | Thermoformed polyolefin foams and methods of their production |
US6368200B1 (en) | 2000-03-02 | 2002-04-09 | Agere Systems Guardian Corporation | Polishing pads from closed-cell elastomer foam |
JP4634688B2 (ja) | 2000-03-15 | 2011-02-16 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 調節された摩耗速度を有する窓部 |
US6454634B1 (en) | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
JP3925041B2 (ja) | 2000-05-31 | 2007-06-06 | Jsr株式会社 | 研磨パッド用組成物及びこれを用いた研磨パッド |
JP2001348271A (ja) | 2000-06-01 | 2001-12-18 | Tosoh Corp | 研磨用成形体及びこれを用いた研磨用定盤 |
US6685537B1 (en) | 2000-06-05 | 2004-02-03 | Speedfam-Ipec Corporation | Polishing pad window for a chemical mechanical polishing tool |
DE60110226T2 (de) | 2000-06-30 | 2006-03-09 | Rohm and Haas Electronic Materials CMP Holdings, Inc., Wilmington | Unterlage für polierscheibe |
US6458013B1 (en) | 2000-07-31 | 2002-10-01 | Asml Us, Inc. | Method of chemical mechanical polishing |
US6477926B1 (en) * | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
US6641471B1 (en) | 2000-09-19 | 2003-11-04 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
US20020072296A1 (en) | 2000-11-29 | 2002-06-13 | Muilenburg Michael J. | Abrasive article having a window system for polishing wafers, and methods |
EP1211024A3 (en) | 2000-11-30 | 2004-01-02 | JSR Corporation | Polishing method |
US20020098790A1 (en) | 2001-01-19 | 2002-07-25 | Burke Peter A. | Open structure polishing pad and methods for limiting pore depth |
US20020098789A1 (en) * | 2001-01-19 | 2002-07-25 | Peter A. Burke | Polishing pad and methods for improved pad surface and pad interior characteristics |
US6840843B2 (en) | 2001-03-01 | 2005-01-11 | Cabot Microelectronics Corporation | Method for manufacturing a polishing pad having a compressed translucent region |
KR100877386B1 (ko) | 2001-11-13 | 2009-01-07 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 그 제조 방법 |
US7435165B2 (en) | 2002-10-28 | 2008-10-14 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US6998166B2 (en) | 2003-06-17 | 2006-02-14 | Cabot Microelectronics Corporation | Polishing pad with oriented pore structure |
-
2005
- 2005-06-22 US US11/158,694 patent/US7267607B2/en not_active Expired - Lifetime
-
2006
- 2006-05-24 KR KR1020077029836A patent/KR101265370B1/ko active IP Right Grant
- 2006-05-24 CN CNA2006800227305A patent/CN101208180A/zh active Pending
- 2006-05-24 EP EP06760366.2A patent/EP1915233B1/en active Active
- 2006-05-24 JP JP2008518178A patent/JP2008546550A/ja active Pending
- 2006-05-24 WO PCT/US2006/020193 patent/WO2007001699A1/en active Application Filing
- 2006-06-09 TW TW095120654A patent/TWI295946B/zh active
-
2007
- 2007-11-27 IL IL187705A patent/IL187705A/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003218074A (ja) * | 2001-11-13 | 2003-07-31 | Toyobo Co Ltd | 半導体ウエハ研磨パッド及び半導体ウエハの研磨方法 |
JP2004043768A (ja) * | 2001-12-07 | 2004-02-12 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
US20030220061A1 (en) * | 2002-05-23 | 2003-11-27 | Cabot Microelectronics Corporation | Microporous polishing pads |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016528054A (ja) * | 2013-08-22 | 2016-09-15 | キャボット マイクロエレクトロニクス コーポレイション | 独立気泡構造を有する超高空隙体積研磨パッド |
JP2016533037A (ja) * | 2013-08-22 | 2016-10-20 | キャボット マイクロエレクトロニクス コーポレイション | 多孔質界面および中実コアを備えた研磨パッドならびにその装置および方法 |
JP2019521231A (ja) * | 2016-07-11 | 2019-07-25 | 浙江新恒泰新材料有限公司 | 高倍率の熱可塑性ポリウレタン微細孔発泡シート及びその生産方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20080016663A (ko) | 2008-02-21 |
IL187705A0 (en) | 2008-08-07 |
TWI295946B (en) | 2008-04-21 |
US7267607B2 (en) | 2007-09-11 |
EP1915233A1 (en) | 2008-04-30 |
EP1915233B1 (en) | 2019-01-30 |
WO2007001699A1 (en) | 2007-01-04 |
TW200702102A (en) | 2007-01-16 |
CN101208180A (zh) | 2008-06-25 |
US20050277371A1 (en) | 2005-12-15 |
KR101265370B1 (ko) | 2013-05-22 |
IL187705A (en) | 2013-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2008546550A (ja) | Cmpのための透過性微細多孔質材料 | |
US7311862B2 (en) | Method for manufacturing microporous CMP materials having controlled pore size | |
EP1567306B1 (en) | Transparent microporous materials for cmp | |
KR101109324B1 (ko) | 미세다공성 영역을 갖는 연마 패드 | |
KR101109211B1 (ko) | 배향된 포아 구조를 갖는 연마 패드 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090522 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111018 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120117 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120417 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120821 |