JP2008512695A - フォトニック結晶の製造方法 - Google Patents
フォトニック結晶の製造方法 Download PDFInfo
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- JP2008512695A JP2008512695A JP2007524354A JP2007524354A JP2008512695A JP 2008512695 A JP2008512695 A JP 2008512695A JP 2007524354 A JP2007524354 A JP 2007524354A JP 2007524354 A JP2007524354 A JP 2007524354A JP 2008512695 A JP2008512695 A JP 2008512695A
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- photoresist
- etching solution
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- photonic crystal
- chalcogenide
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 16
- 230000009022 nonlinear effect Effects 0.000 claims abstract 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- -1 arsenic selenide Chemical class 0.000 claims description 6
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 claims description 4
- BMFVGAAISNGQNM-UHFFFAOYSA-N isopentylamine Chemical compound CC(C)CCN BMFVGAAISNGQNM-UHFFFAOYSA-N 0.000 claims description 4
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 4
- 239000002879 Lewis base Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 3
- 150000007527 lewis bases Chemical class 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 4
- 229910052787 antimony Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- XPDICGYEJXYUDW-UHFFFAOYSA-N tetraarsenic tetrasulfide Chemical compound S1[As]2S[As]3[As]1S[As]2S3 XPDICGYEJXYUDW-UHFFFAOYSA-N 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 7
- 150000004770 chalcogenides Chemical class 0.000 description 27
- 239000000463 material Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
- UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 description 7
- 239000005387 chalcogenide glass Substances 0.000 description 7
- 230000002427 irreversible effect Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001093 holography Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000668842 Lepidosaphes gloverii Species 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- AOPCTAWIMYYTKA-UHFFFAOYSA-N [As].[Ag] Chemical compound [As].[Ag] AOPCTAWIMYYTKA-UHFFFAOYSA-N 0.000 description 1
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- YMWUJEATGCHHMB-UHFFFAOYSA-N dichloromethane Substances ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000007849 functional defect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- RJAVVKVGAZUUIE-UHFFFAOYSA-N stibanylidynephosphane Chemical compound [Sb]#P RJAVVKVGAZUUIE-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optical Integrated Circuits (AREA)
- Surface Treatment Of Glass (AREA)
- Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Glass Compositions (AREA)
Abstract
Description
2元カルコゲニド:硫化ヒ素、セレン化ヒ素及びテルル化ヒ素、ケイ素−、スズ−、アンチモン−、リン−、ゲルマニウム−、タリウム−及びハロゲンカルコゲニド、
3元カルコゲニド:リン−ヒ素−、銀−ヒ素−、リン−アンチモン−、及びリン−スズ−カルコゲニド、
多元カルコゲニド:ナトリウム−ゲルマニウム−ヒ素−セレン化物及び銅−ゲルマニウム−ケイ素−テルル化物。
第1の段階は、カルコゲニド硫化ヒ素As2S3を、基板としての寸法22mm×22mm×170μmの光学透過性のシリケートガラス上に施与することである。最初に、固体の硫化ヒ素を、微粉末に破壊し、次いで酸化アルミニウムで被覆された発熱体を用いて熱蒸発室内に導入した。基板保持体を使用して、ガラス基板を適切に保持した。この蒸発室を閉じた後に、圧力を3〜10-5Pa(2〜10-7Torr)になるまで排気した。この酸化アルミニウム製るつぼを230〜280℃に加熱し、その際、この粉末形のカルコゲニドを昇華させ、そしてガラス基板上に厚さ5〜20μmの薄膜が堆積する。この工程段階は、全体で10〜20分にわたって継続した。
このように製造されたカルコゲニド−フォトレジストを、2光子レーザー描画用の配置で導入した。3Dフォトニック結晶をこの皮膜内に描画するために、再生により増幅されたパルス時間120fsのTi:サファイアレーザーを使用し、その繰り返し速度を1kHzないし単一パルスに調節した。波長としては、800nmを選択した。それというのも、この範囲内ではこのカルコゲニドの単光子吸収速度を無視できるからである。
このように描画されたフォトレジストを、目下、液体エッチング剤、すなわち反応性有機ルイス塩基、特に有機アミン、例えばジエチルアミンを有する有機溶剤に曝した。このエッチング剤の化学的選択性により、ネガティブフォトレジストと同様に、このカルコゲニド−フォトレジストの露光された範囲は露光されていない範囲と比べて極めてゆっくりとエッチングされた。このエッチングは、約10〜20分にわたって継続させた。この露光された範囲と露光されていない範囲とのエッチング速度の比は、500:1か又はそれより大きかった。次いで、このフォトニック結晶をこのエッチング剤から取り出し、有機溶剤、例えば1,2−ジクロロメタン中で洗浄し、そして通常の条件下で乾燥させた。図1は、硫化ヒ素As2S3中に直接レーザー描画により得られたエッチングされたフォトニックウッドパイル構造の走査型電子顕微鏡像を示している。
Claims (10)
- 以下の工程段階
a)フォトレジストの電子バンドギャップと比べて大きいエネルギーで露光されると相変化を示す無機フォトレジストを提供する段階、
b)このフォトレジストを、エネルギーがこのフォトレジストの電子バンドギャップ未満であるが焦点における強度がそこで非線形作用をもたらす大きさのレーザービームで露光し、これによりこのフォトレジスト内において相変化をもたらす段階、
c)場合により、このレーザービーム及びフォトレジストを互いに関して移動させ、そして工程段階b)を繰り返す段階、
d)露光されたフォトレジストを、好ましくはこのフォトレジストの1相を溶解させるエッチング溶液中で現像する段階、
e)現像されたフォトレジストをフォトニック結晶として取り出す段階
を有する、フォトニック結晶の製造方法。 - フォトレジストの屈折率が少なくとも1.4である、請求項1に記載の方法。
- フォトレジストが、周期系のVI族典型元素を有する2元化合物、3元化合物又は多元化合物からなる、請求項1又は2に記載の方法。
- フォトレジストが、硫黄、セレン又はテルルと、ヒ素、リン、アンチモン、ケイ素、ゲルマニウム又はスズとからの化合物からなる、請求項3に記載の方法。
- フォトレジストが硫化ヒ素又はセレン化ヒ素からなる、請求項4に記載の方法。
- レーザービームの波長が450〜5000nmである、請求項1から5までの何れか1項に記載の方法。
- 露光された範囲におけるエッチング溶液の反応速度と露光されていない範囲におけるエッチング溶液の反応速度との比が、少なくとも10:1である、請求項1から6までの何れか1項に記載の方法。
- 露光された範囲におけるエッチング溶液の反応速度と露光されていない範囲におけるエッチング溶液の反応速度との比が、少なくとも100:1である、請求項7に記載の方法。
- エッチング溶液が有機ルイス塩基を有する、請求項1から8までの何れか1項に記載の方法。
- エッチング溶液が、ジエチルアミン、イソアミルアミン、ベンジルアミン又はプロピルアミンを有する、請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004037949A DE102004037949B4 (de) | 2004-08-05 | 2004-08-05 | Verfahren zur Herstellung von Photonischen Kristallen |
DE102004037949.1 | 2004-08-05 | ||
PCT/EP2005/054231 WO2006015989A1 (de) | 2004-08-05 | 2005-08-05 | Verfahren zur herstellung von photonischen kristallen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008512695A true JP2008512695A (ja) | 2008-04-24 |
JP5026967B2 JP5026967B2 (ja) | 2012-09-19 |
Family
ID=35482121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007524354A Expired - Fee Related JP5026967B2 (ja) | 2004-08-05 | 2005-08-05 | 3次元フォトニック結晶の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7732122B2 (ja) |
EP (1) | EP1784670B1 (ja) |
JP (1) | JP5026967B2 (ja) |
AT (1) | ATE458208T1 (ja) |
CA (1) | CA2573930C (ja) |
DE (2) | DE102004037949B4 (ja) |
WO (1) | WO2006015989A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8070919B2 (en) * | 2007-07-16 | 2011-12-06 | Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) | Method for preparing one dimensional spin photonic crystal device and one dimensional spin photonic crystal device prepared by the same |
CN103025477B (zh) * | 2010-07-26 | 2015-05-06 | 浜松光子学株式会社 | 半导体设备的制造方法 |
US8986562B2 (en) | 2013-08-07 | 2015-03-24 | Ultratech, Inc. | Methods of laser processing photoresist in a gaseous environment |
US10431455B2 (en) | 2015-09-17 | 2019-10-01 | The Regents Of The University Of Michigan | Femtosecond laser-induced formation of single crystal patterned semiconductor surface |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000313629A (ja) * | 1999-04-27 | 2000-11-14 | Japan Science & Technology Corp | 微小穴開きガラス及びその製造方法 |
JP2002344280A (ja) * | 2001-05-18 | 2002-11-29 | Mitsubishi Electric Corp | 圧電薄膜素子とその製造方法 |
JP2003321252A (ja) * | 2002-04-25 | 2003-11-11 | Japan Science & Technology Corp | ガラス内部への分相領域の形成方法 |
JP2003340579A (ja) * | 2002-05-24 | 2003-12-02 | Inst Of Physical & Chemical Res | 透明材料内部の処理方法およびその装置 |
JP2004196585A (ja) * | 2002-12-18 | 2004-07-15 | Nippon Sheet Glass Co Ltd | レーザビームにより材料内部に異質相を形成する方法、構造物および光部品 |
JP2004223586A (ja) * | 2003-01-24 | 2004-08-12 | Institute Of Physical & Chemical Research | 透明材料内部の処理方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4493886A (en) * | 1982-05-11 | 1985-01-15 | University Patents, Inc. | Composition and method for forming amorphous chalcogenide films from solution |
AU2003304694A1 (en) | 2003-12-05 | 2005-08-12 | 3M Innovative Properties Company | Process for producing photonic crystals and controlled defects therein |
US20050124712A1 (en) * | 2003-12-05 | 2005-06-09 | 3M Innovative Properties Company | Process for producing photonic crystals |
-
2004
- 2004-08-05 DE DE102004037949A patent/DE102004037949B4/de not_active Expired - Fee Related
-
2005
- 2005-08-05 US US11/659,432 patent/US7732122B2/en not_active Expired - Fee Related
- 2005-08-05 AT AT05801690T patent/ATE458208T1/de not_active IP Right Cessation
- 2005-08-05 CA CA2573930A patent/CA2573930C/en not_active Expired - Fee Related
- 2005-08-05 EP EP05801690A patent/EP1784670B1/de not_active Not-in-force
- 2005-08-05 JP JP2007524354A patent/JP5026967B2/ja not_active Expired - Fee Related
- 2005-08-05 WO PCT/EP2005/054231 patent/WO2006015989A1/de active Application Filing
- 2005-08-05 DE DE502005009046T patent/DE502005009046D1/de active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000313629A (ja) * | 1999-04-27 | 2000-11-14 | Japan Science & Technology Corp | 微小穴開きガラス及びその製造方法 |
JP2002344280A (ja) * | 2001-05-18 | 2002-11-29 | Mitsubishi Electric Corp | 圧電薄膜素子とその製造方法 |
JP2003321252A (ja) * | 2002-04-25 | 2003-11-11 | Japan Science & Technology Corp | ガラス内部への分相領域の形成方法 |
JP2003340579A (ja) * | 2002-05-24 | 2003-12-02 | Inst Of Physical & Chemical Res | 透明材料内部の処理方法およびその装置 |
JP2004196585A (ja) * | 2002-12-18 | 2004-07-15 | Nippon Sheet Glass Co Ltd | レーザビームにより材料内部に異質相を形成する方法、構造物および光部品 |
JP2004223586A (ja) * | 2003-01-24 | 2004-08-12 | Institute Of Physical & Chemical Research | 透明材料内部の処理方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1784670A1 (de) | 2007-05-16 |
DE102004037949A1 (de) | 2006-03-16 |
CA2573930A1 (en) | 2006-02-16 |
EP1784670B1 (de) | 2010-02-17 |
DE502005009046D1 (de) | 2010-04-01 |
ATE458208T1 (de) | 2010-03-15 |
US20080032237A1 (en) | 2008-02-07 |
US7732122B2 (en) | 2010-06-08 |
WO2006015989A1 (de) | 2006-02-16 |
JP5026967B2 (ja) | 2012-09-19 |
CA2573930C (en) | 2013-10-15 |
DE102004037949B4 (de) | 2009-04-02 |
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