JP2008507805A - 調整可能な磁気スイッチ - Google Patents

調整可能な磁気スイッチ Download PDF

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Publication number
JP2008507805A
JP2008507805A JP2007522884A JP2007522884A JP2008507805A JP 2008507805 A JP2008507805 A JP 2008507805A JP 2007522884 A JP2007522884 A JP 2007522884A JP 2007522884 A JP2007522884 A JP 2007522884A JP 2008507805 A JP2008507805 A JP 2008507805A
Authority
JP
Japan
Prior art keywords
magnetic
magnetic field
memory device
bias
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007522884A
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English (en)
Japanese (ja)
Other versions
JP2008507805A5 (https=
Inventor
オウバ，ステファン
ルダ，ハリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Toronto
Original Assignee
University of Toronto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Toronto filed Critical University of Toronto
Publication of JP2008507805A publication Critical patent/JP2008507805A/ja
Publication of JP2008507805A5 publication Critical patent/JP2008507805A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Measuring Magnetic Variables (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
JP2007522884A 2004-07-27 2005-07-27 調整可能な磁気スイッチ Pending JP2008507805A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US59107904P 2004-07-27 2004-07-27
US64780905P 2005-01-31 2005-01-31
PCT/CA2005/001167 WO2006010258A1 (en) 2004-07-27 2005-07-27 Tunable magnetic switch

Publications (2)

Publication Number Publication Date
JP2008507805A true JP2008507805A (ja) 2008-03-13
JP2008507805A5 JP2008507805A5 (https=) 2008-09-11

Family

ID=35785874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007522884A Pending JP2008507805A (ja) 2004-07-27 2005-07-27 調整可能な磁気スイッチ

Country Status (8)

Country Link
US (1) US20060023496A1 (https=)
EP (1) EP1776703A4 (https=)
JP (1) JP2008507805A (https=)
KR (1) KR100864259B1 (https=)
AU (2) AU2005266797B2 (https=)
CA (1) CA2573406A1 (https=)
TW (1) TW200617952A (https=)
WO (1) WO2006010258A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175756A (ja) * 2013-04-08 2013-09-05 Toshiba Corp 磁気記憶素子、磁気記憶装置、および磁気メモリ

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235896A (ja) * 2006-03-03 2007-09-13 Nippon Signal Co Ltd:The アンテナ及び物品管理収納庫
CN100477316C (zh) * 2006-04-11 2009-04-08 中国科学院物理研究所 基于环状闭合型磁性多层膜的磁逻辑元件
JP5285585B2 (ja) * 2009-12-02 2013-09-11 セイコーインスツル株式会社 磁気センサ装置
WO2013008466A1 (ja) * 2011-07-13 2013-01-17 旭化成エレクトロニクス株式会社 電流センサ用基板及び電流センサ
WO2013008462A1 (ja) * 2011-07-13 2013-01-17 旭化成エレクトロニクス株式会社 電流センサ用基板及び電流センサ
TW201316018A (zh) * 2011-10-04 2013-04-16 Orient Chip Semiconouctor Co Ltd 霍爾開關中偏移電壓消除電路
US10276783B2 (en) 2017-06-09 2019-04-30 Sandisk Technologies Llc Gate voltage controlled perpendicular spin orbit torque MRAM memory cell
FR3126086A1 (fr) * 2021-08-06 2023-02-10 Commissariat à l'énergie atomique et aux énergies alternatives Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet Hall

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JPH0423293A (ja) * 1990-05-18 1992-01-27 Toshiba Corp 磁気メモリセル及び磁性薄膜
JPH10283771A (ja) * 1997-04-09 1998-10-23 Masayuki Morizaki マイクロ磁気コアメモリー

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JPS61172079A (ja) * 1984-03-14 1986-08-02 Matsushita Electric Works Ltd ホ−ルセンサ
JPH0423293A (ja) * 1990-05-18 1992-01-27 Toshiba Corp 磁気メモリセル及び磁性薄膜
JPH10283771A (ja) * 1997-04-09 1998-10-23 Masayuki Morizaki マイクロ磁気コアメモリー

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175756A (ja) * 2013-04-08 2013-09-05 Toshiba Corp 磁気記憶素子、磁気記憶装置、および磁気メモリ

Also Published As

Publication number Publication date
CA2573406A1 (en) 2006-02-02
AU2005266797A1 (en) 2006-02-02
AU2005266797B2 (en) 2009-05-21
KR20070042564A (ko) 2007-04-23
EP1776703A4 (en) 2009-12-02
WO2006010258A1 (en) 2006-02-02
KR100864259B1 (ko) 2008-10-17
US20060023496A1 (en) 2006-02-02
TW200617952A (en) 2006-06-01
EP1776703A1 (en) 2007-04-25
AU2009208092A1 (en) 2009-09-03

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