JP2008507076A - 交換バイアス(exchange−bias)に基づく多状態(multi−state)磁気メモリおよび論理装置、および磁気的に安定な磁気記憶 - Google Patents
交換バイアス(exchange−bias)に基づく多状態(multi−state)磁気メモリおよび論理装置、および磁気的に安定な磁気記憶 Download PDFInfo
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Abstract
Description
本発明は、FA9550−04−1−0160およびDE−FG03−−87ER−45332に基づく米国政府支援の一環として作成されたものである。米国政府は本発明における一定の権利を有する。
F層とAF層の磁気結合による交換バイアスは、F層とAF層の両方で磁気異方性が変化する原因となる。交換バイアスを説明するための1つの理論上のモデルは、水平長さスケール(lateral length scales)モデルである。2005年6月17日にhttp:/www.edpsciences.org/eplにオンライン出版されEurophysic Letters、Vol.71(2005年7月)に掲載を予定され、参照によってその全開示を本明細書に組み込まれているIgor Roshschin et al.「Lateral length scales in exchange bias」を参照されたい。他にも説明されている可能性がある。交換バイアスの局所的な型(regime)を説明する試験結果は、本明細書で単に安定化技術および多状態メモリ技術の背後にある交換バイアスに関する理解を助けるために使用されており、本出願で説明するさまざまな実装を限定するものと解釈してはならない。
前述の領域のインプリントによってAFからFに導入された追加の単方向の異方性の方向を局所的に制御できる。この追加の単方向の異方性によって、磁気スイッチ(magnetic switching)の効果的なエネルギー障壁が強化されるため、FビットまたはFナノ構造の磁気的な安定性が向上する。
前述のF層からAF層へのインプリントを使用することによって、交換バイアスの方向を正または負のいずれかに局所的に設定できる。したがって、2つの領域の磁性状態は、2つの領域が反対方向に交換バイアスされる場合に作成される。2つの領域のサイズの比率によって、データを記憶するための磁気「ビット」として使用する磁気領域の残留磁化が決定する。こうした1つのビット位置での2つの領域の使用により、広範囲に及ぶ磁場で明確に定義された安定な多状態磁気「ビット」を備える磁気メモリを作成できる。状態は、Mri=Ms/n(ただし、2n+1は状態の総数、iは−nから+nまでの任意の値)となるよう正と負の飽和磁化(saturated magnetization)の値Msの間にある残留磁化の値Mrに対応する。多状態の最大数は、装置の磁気感知限界によって設定される。
1.選択された磁気ビットは、ブロッキング温度TB、すなわち交換バイアスの方向が設定される温度を超えるまで加熱される。
2.選択された残留磁化Mr0は、小さなループを使用することによって実現される。考えられる手順の1つは、Mr0の方向と逆の方向に大きな磁場かけ、さらにMr0の方向に小さな磁場をかけることによってこの印可磁場を除去したときのMr0に等しい大きさの残留磁化を生成し、磁気ビットの磁化を飽和させることである。ここで磁場が除去される。
3.印可磁場がない状態で、ビットはTBより低温に冷却される。
4.残留磁化の値はこのAF−Fビットにインプリントされ、特定のビットがTBより低温に維持される限り、隣接する磁気ビットの書き込みに使用する磁場によっても、隣接する磁気ビットからの漂遊磁場によっても影響されない。
1.選択された磁気ビットは、ブロッキング温度TB、すなわち交換バイアスの方向が設定される温度を超えるまで加熱される。
2.特定の大きさの磁場がかけられる。
3.印可磁場でビットがTBより低温に冷却される。
4.特定の大きさの磁場でビットを冷却すると、選択された値の残留磁化によるダブル磁気ヒステリシス・ループを示す2つの領域による構造を設定できる。残留磁化の値はこのAF−Fビットにインプリントされ、特定のビットがTBより低温に維持される限り、隣接する磁気ビットへの書き込みに使用する磁場によっても、隣接する磁気ビットからの漂遊磁場によっても影響されない。
Claims (20)
- 互いに磁気結合された強磁性層とこれに隣接する反強磁性層とを備えることによって前記反強磁性層のブロッキング温度を下回る動作温度でデータを記憶する磁気記憶材料を備える装置であって、前記ブロッキング温度は前記強磁性材料のキュリー温度を下回る装置。
- 前記磁性材料は3つ以上の磁性状態をとるように構成される請求項1に記載の装置。
- 前記強磁性層と前記反強磁性層とは、前記材料の磁気ヒステリシス・ループをゼロ磁場から離れて前記装置の漂遊磁場より大きな磁場にオフセットするように選択される請求項1に記載の装置。
- 前記材料に対して読み出しと書き込みとを行う磁気ヘッドと、
選択された磁区にデータが書き込まれる場合に、前記選択された磁区と前記材料の温度を局所的に制御する温度制御メカニズムと
をさらに備える請求項1に記載の装置。 - 前記温度制御メカニズムはレーザーを備えており、書き込み時に前記レーザーから選択された磁区にレーザー・ビームを集束する請求項4に記載の装置。
- 前記温度制御メカニズムは前記レーザー・ビームを集束するための近接場光学(near−field optics)を備える請求項5に記載の装置。
- 前記温度制御メカニズムは選択された磁区を加熱する誘導性の走査型プローブ顕微鏡(SPM)チップを備える請求項4に記載の装置。
- 前記温度制御メカニズムは各磁区の一部として抵抗(オーム)加熱メカニズムを備える請求項4に記載の装置。
- 前記温度制御メカニズムは前記選択された磁区に接触する抵抗(オーム)加熱素子を備える請求項4に記載の装置。
- 選択された磁区にデータが書き込まれるときに、前記選択された磁区と前記材料の温度を局所的に制御する温度制御メカニズムをさらに備える請求項1に記載の装置。
- 前記温度制御メカニズムはレーザーを備えており、書き込み時に前記レーザーから選択された磁区にレーザー・ビームを集束する請求項10に記載の装置。
- 前記温度制御メカニズムは前記レーザー・ビームを集束するための近接場光学を備える請求項11に記載の装置。
- 前記温度制御メカニズムは選択された磁区を加熱する誘導性の走査型プローブ顕微鏡(SPM)チップを備える請求項10に記載の装置。
- 前記温度制御メカニズムは各磁区の一部として抵抗(オーム)加熱メカニズムを備える請求項10に記載の装置。
- 前記温度制御メカニズムは前記選択された磁区に接触する抵抗(オーム)加熱素子を備える請求項10に記載の装置。
- 互いに磁気結合された強磁性層とこれに隣接する反強磁性層とを備えており、前記反強磁性層のブロッキング温度を下回る動作温度でデータを記憶する磁気記憶材料を提供し、前記ブロッキング温度は前記強磁性材料のキュリー温度を下回る工程と、
局所的な加熱を実行することによって前記材料内の選択された磁気ビットの温度を前記ブロッキング温度より高温に上昇させる工程と、
前記ブロッキング温度を上回る温度で、前記選択された磁気ビットに磁化プロセスを適用することによって、残留磁化をあらかじめ指定された多状態記憶媒体の残留磁化のセットから選択された値に設定し、ビットを書き込む工程と、
前記選択された磁気ビットで前記外部磁場を除去する工程と、
前記ゼロ磁場で前記選択された磁気ビットの温度を前記ブロッキング温度より低温に下降させて前記残留磁化を前記選択されたビットに記憶する工程とを備える方法。 - 読み出しを行う前記選択されたビットを感知するときに、前記選択された磁気ビットの温度を前記ブロッキング温度より低温に維持する工程をさらに備える請求項16に記載の方法。
- 互いに磁気結合された強磁性層とこれに隣接する反強磁性層とを備えており、前記反強磁性層のブロッキング温度を下回る動作温度でデータを記憶する磁気記憶材料を提供し、前記ブロッキング温度は前記強磁性材料のキュリー温度を下回る工程と、
局所的な加熱を実行することによって前記材料内の選択された磁気ビットの温度を前記ブロッキング温度より高温に上昇させる工程と、
前記ブロッキング温度を上回る温度で、前記選択された磁気ビットに磁化プロセスを適用することによって、残留磁化をあらかじめ指定された多状態記憶媒体の残留磁化のセットから選択された値に設定し、ビットを書き込む工程と、
前記磁化プロセスの磁場を維持する間に、前記選択された磁気ビットの温度を前記ブロッキング温度より低温に下降させて前記残留磁化を前記選択されたビットに記憶する工程とを備える方法。 - 読み出しを行う前記選択されたビットを感知するときに、前記選択された磁気ビットの温度を前記ブロッキング温度より低温に維持する工程をさらに備える請求項18に記載の方法。
- 互いに磁気結合された強磁性層とこれに隣接する反強磁性層とを備える磁気記憶材料を提供することによって、2進の磁気記憶媒体として磁気ヒステリシス・ループを提供する工程と、
前記強磁性層と前記隣接する反強磁性層とは前記磁気ヒステリシス・ループの中心をH=0から離してセットするように構成することによって、漂遊磁場に対して各2進の状態を安定させる工程とを備える方法。
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