JP2008506036A - Copper-containing conductive material with Me-DLC hard material coating - Google Patents
Copper-containing conductive material with Me-DLC hard material coating Download PDFInfo
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- JP2008506036A JP2008506036A JP2007519589A JP2007519589A JP2008506036A JP 2008506036 A JP2008506036 A JP 2008506036A JP 2007519589 A JP2007519589 A JP 2007519589A JP 2007519589 A JP2007519589 A JP 2007519589A JP 2008506036 A JP2008506036 A JP 2008506036A
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- 239000004020 conductor Substances 0.000 title claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 22
- 239000010949 copper Substances 0.000 title claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 title claims description 16
- 238000000576 coating method Methods 0.000 title description 12
- 239000011248 coating agent Substances 0.000 title description 9
- 239000010410 layer Substances 0.000 claims abstract description 72
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 12
- 239000000956 alloy Substances 0.000 claims abstract description 12
- 239000012790 adhesive layer Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000011651 chromium Substances 0.000 claims description 25
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052755 nonmetal Inorganic materials 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 3
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 claims description 2
- 229910001369 Brass Inorganic materials 0.000 claims description 2
- 229910039444 MoC Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000010951 brass Substances 0.000 claims description 2
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000011265 semifinished product Substances 0.000 claims description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 2
- 229910003470 tongbaite Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 11
- 239000012528 membrane Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000007792 addition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000002843 nonmetals Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000008093 supporting effect Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Contacts (AREA)
- Manufacture Of Switches (AREA)
- Non-Insulated Conductors (AREA)
- Conductive Materials (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本発明は、接点面の少なくとも部分上に析出された、少なくとも支持層と接着層から成るカバー層を有する差込み式もしくは締付け式接続としての使用のための銅含有合金から成る導電性材料に関し、その際、減摩層が40原子%以上70原子%以下の炭素含量を有する。 The present invention relates to a conductive material comprising a copper-containing alloy for use as an inset or clamp connection having a cover layer comprising at least a support layer and an adhesive layer deposited on at least a part of a contact surface, In this case, the anti-friction layer has a carbon content of 40 atomic% or more and 70 atomic% or less.
Description
技術分野
本発明は、請求項1の上位概念に記載の、差込み式もしくは締付け式接続としての使用のための銅含有合金から成る導電性材料に関する。さらに請求項18記載の接点ピース、ならびに請求項19記載の半製品ないしは請求項20記載の帯材もしくは異形材。
TECHNICAL FIELD The present invention relates to an electrically conductive material comprising a copper-containing alloy for use as a plug-in or clamp-type connection according to the superordinate concept of claim 1. Furthermore, the contact piece according to claim 18, and the semi-finished product or the strip or profile according to claim 20.
従来技術
銅含有合金は、表面処理のためのめっき層(galvanischen Schichten)の施与についての銅材料の良好な適性のように、同じく従来技術から公知である。これに対しPVD−、CVD−ないしはPVD/CVD膜は今日まで比較的柔らかい銅材料にあまり使用されてこなかった、というのも、例えば、差込み式もしくは締付け式接続の取付けの場合にも生じうるような高い負荷を伴う滑り荷重の場合に該膜が母材中に押し込まれるかないしは突き破るからであり、かつ工具コーティングに使用される多くの膜系が高すぎる摩擦係数(例えば炭化物WC、ないしはCrxCyは約0.5以上の摩擦係数を有する)、高すぎる粗さまたは不良な導電性を示すからであり、これにより該膜系がこのような使用にあまり適当でなくなる。
Prior art Copper-containing alloys are also known from the prior art, as is the good suitability of the copper material for the application of a plating layer for surface treatment. On the other hand, PVD-, CVD- or PVD / CVD films have not been used to date with relatively soft copper materials, as can occur, for example, in the case of plug-in or clamp-on connections. This is because, in the case of a sliding load with a very high load, the film is pushed or pierced into the base metal, and many film systems used for tool coating have too high a coefficient of friction (for example, carbide WC or Cr x C y has a coefficient of friction greater than about 0.5), because it exhibits too high roughness or poor conductivity, which makes the film system less suitable for such use.
独国特許出願公開第1802932号明細書には、炭化物の摩耗防止膜で電気接点をコーティングするための高周波プラズマ法が開示されている。同様なのが独国特許出願公開第3011694号明細書であり、この場合、とりわけ硬化もしくは焼もどしされた種々の金属材料へのめっき接着層(galvanischen Haftschicht)の施与が、およびこれに続く高周波プラズマにおけるPVDコーティングが記載されており、その際、とりわけ炭化物の硬質材料膜が析出される。そのことにより良好な導電性ならびに高められた摩耗防止が達成されるが、しかし、その際、該炭化物コーティングから比較的高い摩擦係数が生じる。 German Offenlegungsschrift 180 29 932 discloses a high-frequency plasma method for coating electrical contacts with a carbide anti-wear film. Similar is DE 3011694, in which the application of a plating adhesive layer (galvanischen Haftschit) to various metal materials, in particular hardened or tempered, is followed by radio frequency plasma. PVD coatings are described, in which a carbide hard material film, in particular, is deposited. This achieves good electrical conductivity as well as increased wear protection, but in that case a relatively high coefficient of friction results from the carbide coating.
独国特許出願公開第4421144号明細書から、工具寿命を延ばすために先ず金属炭化物から成る硬質材料膜と、引き続き遊離炭素を含有する減摩膜とが炭化タングステンベースに施与された、コーティングされた工具が公知である。 From German Offenlegungsschrift 442 211 144, a coated coating in which a hard material film made of metal carbide first and subsequently an anti-friction film containing free carbon is applied to the tungsten carbide base in order to extend the tool life. Tools are known.
発明の開示
本発明の課題は、従来技術の上記欠点が回避されかつ従来のコーティングされた材料に対してより良好な電気的性質ならびにより良好な工具寿命−および滑り特性が達成される、銅含有導電性材料を提供することである。
DISCLOSURE OF THE INVENTION The object of the present invention is to contain copper which avoids the above-mentioned drawbacks of the prior art and achieves better electrical properties and better tool life- and sliding properties over conventional coated materials. It is to provide a conductive material.
この課題は請求項1の特徴部における本発明による特徴によって解決される。
本発明により改質された、炭素含量40原子%以上であるがしかし70原子%以下である炭素含有の減摩−ないしは硬質層、これは銅−もしくは銅合金上に析出される、が使用されることによって、表面の硬さならびにしたがって材料の耐摩耗性および耐摩擦性を高めることが、そのすぐれた電気的性質が本質的に変わることなく可能である。この場合には炭化物として結合したかもしくは遊離の炭素の含量が炭素含量とみなされ、この含量は炭化物形成物質および任意のさらなる元素とともに100%に補完される。その際、例えば下記のより詳細な方法を用いて、減摩性および電気的性質が限定された硬質膜が析出し
、この硬質膜によって導電性材料の工具寿命の延長がもたされる。この膜は従来の例えば炭化物の硬質膜より若干硬くないが、しかしその担体材料より顕著に硬くかつこれをそのことにより摩耗から保護する。驚くべきことにこの膜はその担体材料を差込み式および締付け式の使用の場合に従来の硬質膜系より良好に保護し、その際、高い単位面積当たりの圧力を伴う使用のために付加的にもう1つの支持層が備えられていてもよい。このことは本硬質膜の場合には比較的低い摩擦係数によるものとも考えられ、この摩擦係数は好ましくは例えば差込み式接続への使用の場合に作用する、というのも、そのことにより同時に挿入力が減じられるからであり、かつコーティングされていない場合もある相対物の引っかき傷が防止されるからである。
This problem is solved by the features according to the invention in the characterizing part of claim 1.
A carbon-containing anti-friction or hard layer, modified in accordance with the present invention, having a carbon content of 40 atomic percent or more but 70 atomic percent or less, which is deposited on copper or copper alloys, is used. By doing so, it is possible to increase the hardness of the surface and thus the wear and friction resistance of the material without changing its superior electrical properties essentially. In this case, the content of carbon bound or free as carbide is taken as the carbon content, which is supplemented to 100% with the carbide-forming material and any further elements. In this case, for example, a hard film with limited anti-friction and electrical properties is deposited using the following more detailed method, and this hard film extends the tool life of the conductive material. This film is slightly harder than conventional hard carbide films, but is significantly harder than the carrier material and thereby protects it from wear. Surprisingly, this membrane protects the carrier material better than conventional hard membrane systems in the case of plug-in and clamp-in use, in which case it is additionally added for use with high pressure per unit area Another support layer may be provided. This is also considered to be due to the relatively low coefficient of friction in the case of the present hard film, this coefficient of friction preferably acting for example when used for plug-in connections, because at the same time the insertion force This is because the scratches on the relatives, which may be uncoated, may be prevented.
まさにこれらの性質によって、このような膜は車両−もしくは航空機組立への使用にも、すなわちバイブレーション、振動もしくは類似のものによる不変荷重が場合によっては衝撃荷重も伴って発生するあらゆる使用に適当となる。従来の銅製導電性材料に比してより高い安定性によって、機能を妨害するかもしくは完全に機能を阻止するこのような接続箇所における表面疲労、この表面疲労は銅つまりあらかじめ公知のコーティングされた銅材料の比較的少ない強度によって生じうる、の発生が回避される。さらにその場合、高められた作業温度で生じかつしばしばこのような差込み式および締付け式接続の失敗の原因である摩擦酸化現象(Triboxidationserscheinungen)も効果的に防止されることができる。 Exactly these properties make such membranes suitable for use in vehicle- or aircraft assembly, i.e. any use where invariant loads due to vibration, vibration or the like sometimes occur with impact loads. . Surface fatigue at such joints that interferes with function or completely prevents function due to higher stability compared to conventional copper conductive materials, this surface fatigue is copper, that is, a pre-known coated copper Occurrences that can be caused by the relatively low strength of the material are avoided. Furthermore, the tribooxidation phenomenon that occurs at elevated operating temperatures and often causes such plug and clamp connection failures can also be effectively prevented.
次の本発明によりコーティングされた銅含有合金で今までに差込み式および締付け式接続としての使用の場合に荷重能力の際立った改善を確認されることができた: 銅、青銅、黄銅または洋銀。しかしながら類似の改善が他の母材、例えばCuBeおよび他の合金の使用の場合にもないしは他の応用への使用の場合に期待することができる。 A significant improvement in load capacity has been observed with copper-containing alloys coated according to the present invention so far when used as plug and clamp connections: copper, bronze, brass or silver. However, similar improvements can be expected when using other base materials such as CuBe and other alloys or when used for other applications.
さらに、めっきによりプレコーティングされた導電性材料を使用することは同じく有利でありうる。その例は、支持層の前に施与されるCr−、Ni−ないしはCrNi膜である。 Furthermore, it can be equally advantageous to use a conductive material pre-coated by plating. Examples thereof are Cr-, Ni- or CrNi films applied before the support layer.
低い析出温度ゆえにプラズマCVD−、PVD−もしくはPVD/CVD−ハイブリッド法は、例えば焼もどし可能な銅材料のコーティングのためのMe−DLC膜の析出に特に適当である。 Due to the low deposition temperature, plasma CVD-, PVD- or PVD / CVD-hybrid processes are particularly suitable for the deposition of Me-DLC films, for example for coating of temperable copper material.
しかしもちろん従来の、例えば独国特許出願公開第4421144号明細書に記載された遊離炭素を含有する膜ないしは米国特許第4992153号明細書もしくは独国特許出願公開第10018143号明細書に記載されたMe−DLC膜(DLCは“ダイヤモンド状炭素(diamond like carbon)”のことである)では十分な伝導性は達成されることはできず、かつ同様に公知の炭化物膜の場合のように、例えば上記の母材中への押し込まれに対する十分な保護が達成されることはできない。驚くべきことに炭素含量を40原子%以上に、しかし70原子%以下に調整するだけですでに伝導性の本質的な改善が達成されることができた。特に良好な性質が炭素含量を50原子%以上に、しかし60原子%以下で達成された。 However, of course, conventional membranes containing free carbon as described, for example, in German Offenlegungsschrift 442 211 144, or Me described in U.S. Pat. No. 4,992,153 or German Offenlegungsschrift 10018143. -DLC films (DLC means "diamond like carbon") cannot achieve sufficient conductivity, and also as in the case of known carbide films, for example Sufficient protection against being pushed into the base metal cannot be achieved. Surprisingly, a substantial improvement in conductivity could already be achieved simply by adjusting the carbon content to more than 40 atomic percent but not more than 70 atomic percent. Particularly good properties have been achieved with a carbon content above 50 atomic%, but below 60 atomic%.
元素周期律表の第IV、VおよびVI亜族の元素(すなわちTi、Zr、Hf;V、Nb、Ta;Cr、Mo、W)ないしはアルミニウムもしくはSiからの少なくとも1種の金属Meを含む付加的な支持層の施与によって、もう1つの押し込まれが著しく高い荷重の場合でさえ回避されることができた。その際に、金属相のほかになお非金属、例えばC、N、BもしくはO、および/またはこれら非金属との前記金属の硬質材料化合物をも含有する支持層が特に有利であることが判明している。もっぱら例としてこの場合には支持層系TiNないしはTi/TiN(すなわち金属のチタン膜およびこれに続く窒化チタン
硬質膜)、CrNないしはCr/CrN、CrxCyないしはCr/CrxCy、Crx(CN)yないしはCr/Crx(CN)y、TiAlないしはTiAlNおよびTiAl/TiAlNが挙げられよう。
Additions comprising elements of groups IV, V and VI of the periodic table (ie Ti, Zr, Hf; V, Nb, Ta; Cr, Mo, W) or at least one metal Me from aluminum or Si By applying a typical support layer, another indentation could be avoided even in the case of significantly higher loads. In doing so, it has proved to be particularly advantageous to have a support layer which, in addition to the metal phase, still contains nonmetals, for example C, N, B or O, and / or hard metal compounds of said metals with these nonmetals. is doing. Exclusively this case the support layer system TiN or Ti / TiN (i.e. metals titanium film and subsequent titanium nitride hard film) as an example, CrN or Cr / CrN, Cr x C y or Cr / Cr x C y, Cr x (CN) y or Cr / Cr x (CN) y , TiAl or TiAlN and TiAl / TiAlN.
しかしもちろんその際には使用ケースに応じて、支持層が最小膜厚を有することに注意が払われなければならない。これはとりわけ、使用ケースに応じて生じる単位面積当たりの圧力に左右される。例えば単位面積当たりの圧力がわずかである場合にはすでに膜厚0.5μmでDLC膜の十分な支持効果が達成されることができた一方で、0.3μmの支持層ではその支持効果はもはや十分には得られなかった。しかしながら、通常は少なくとも1μmから約3μmの膜厚が推奨に価する。特に高い単位面積当たりの圧力が発生する使用により大きな膜厚、例えば6μm、も有利となりうる。 Of course, however, care must be taken that the support layer has a minimum thickness depending on the use case. This depends inter alia on the pressure per unit area that arises depending on the use case. For example, when the pressure per unit area is small, a sufficient supporting effect of the DLC film can be already achieved with a film thickness of 0.5 μm, while the supporting effect is no longer possible with a support layer of 0.3 μm. Not enough. However, a film thickness of at least 1 μm to about 3 μm is usually recommended. Larger film thicknesses, for example 6 μm, can be advantageous, especially by use where high pressures per unit area are generated.
付加的に支持層と減摩層の間になお、漸変移行部を伴うか伴わない金属中間層が施与されていてもよいし、あるいは直接、例えば減摩層に向かって増大する炭素含量を有する漸変層の形の移行層が施与されていてもよい。 In addition, a metal intermediate layer with or without a gradual transition may be applied between the support layer and the anti-friction layer, or directly, for example, the carbon content increasing towards the anti-friction layer. A transition layer in the form of a graded layer may be applied.
DLC減摩層そのものはしたがって有利に次のようにして実施される: つまり、直接支持層に第IV、V、VI亜族の元素、AlもしくはSiからの少なくとも1種の金属Meを含む金属中間層を付着させる。この目的に特に適当であることが判明している元素CrまたはTiからの中間層が使用されることが好ましい。しかしまた窒化物、炭化物、ホウ化物もしくは酸化物の中間層ないしは1種以上の金属と上記の非金属の1種以上との混合物が使用される中間層も可能であり、これらは必要の際には漸変移行部を伴うか伴わない金属母材上でさえ施与されていてもよい。炭素−減摩層が直接接着層に施与される場合には、該接着層そのものが金属または接着層として適当な化合物から成る場合には、この中間層をやめることができる。 The DLC antifriction layer itself is therefore advantageously implemented as follows: a metal intermediate comprising at least one metal Me from the IV, V, VI subgroup elements, Al or Si in the direct support layer Deposit the layer. It is preferred to use an intermediate layer from the element Cr or Ti which has been found to be particularly suitable for this purpose. However, nitride, carbide, boride or oxide intermediate layers or intermediate layers in which a mixture of one or more metals and one or more of the above non-metals is used are also possible. May be applied even on a metal matrix with or without a gradual transition. If the carbon-friction layer is applied directly to the adhesive layer, this intermediate layer can be omitted if the adhesive layer itself is made of a metal or a compound suitable as an adhesive layer.
これに、あるいは代替的に直接、中間層なしに、好ましくは移行層は殊に漸変層、この層の経過では加工物表面に垂直に向かって金属含量が減少しかつC含量が増大する、の形で続く。炭素の増大はその場合には場合によっては種々の炭化物相の増大によって、遊離炭素の増大によって、ないしはこの種の相と中間層の金属相との混合によって行なうことができる。漸変層の厚さはその場合には、当業者に公知であるように、適当な経過の傾斜路の調整によって調整されることができる。C含量の増大ないしは金属相の減少は連続的または段階的に行なうことができ、さらに漸変層の少なくとも一部で金属単層とC豊富な単層との並びが膜張力のさらなる崩壊にために備えられてもよい。例えばその場合には、例えばスパッタリングによって施与されるMeC膜から始まってかつ遊離炭素の含量は炭素含有の反応ガスの添加によって連続的または段階的に高められることができる。その場合には例えば炭化タングステンベース上の膜にとって、炭化物として結合した炭素と遊離の炭素の約50:1〜約2:1の比が有利であることが判明している。炭化クロム−、炭化タンタル−ないしは炭化モリブデンベース上の膜についても類似の関係を確認することができた。 In this, or alternatively directly, without an intermediate layer, preferably the transition layer is in particular a graded layer, in the course of this layer the metal content decreases perpendicularly to the workpiece surface and the C content increases. It continues in the form of The increase in carbon can then be effected in some cases by increasing various carbide phases, by increasing free carbon, or by mixing this type of phase with the metal phase of the intermediate layer. The thickness of the graded layer can then be adjusted by adjustment of the appropriate course ramp, as is known to those skilled in the art. The increase of the C content or the decrease of the metal phase can be performed continuously or stepwise, and the alignment of the metal monolayer and the C-rich monolayer in at least a part of the graded layer is due to the further collapse of the film tension. May be provided. In that case, for example, starting from a MeC film applied, for example, by sputtering, the free carbon content can be increased continuously or stepwise by the addition of a carbon-containing reaction gas. In that case, for example, for films on tungsten carbide bases, a ratio of about 50: 1 to about 2: 1 of carbon bonded as carbide to free carbon has been found to be advantageous. Similar relationships could be confirmed for films on chromium carbide, tantalum carbide or molybdenum carbide bases.
漸変層の上記形成によって支持−およびDLC膜の材料特性(例えば弾性係数、構造など)はほぼ連続的に相互に適合され、かつそのことによって通常ならば生じる金属ないしはSi/DLC膜の界面に沿った亀裂形成の危険に反対に作用する。 Due to the formation of the graded layer, the material properties of the supporting and DLC films (eg elastic modulus, structure, etc.) are adapted to each other almost continuously and thereby to the normally occurring metal or Si / DLC film interface. Counteracts the risk of crack formation along.
DLC減摩層の終了は、炭素含有のプロセスガスの定義された流量の達成時またはある一定の圧力の達成時にスパッタリングおよび/またはバイアス供給のスイッチを切ることによって行なうことができる。他の方法は、外側の機能層の性質を所望の最低膜厚の全体にわたって一定に維持するために、最後の工程段階中にコーティングパラメータを一定に維持することである。 Termination of the DLC anti-friction layer can be accomplished by switching off the sputtering and / or bias supply when a defined flow rate of the carbon-containing process gas is achieved or when a certain pressure is achieved. Another method is to keep the coating parameters constant during the last process step in order to keep the properties of the outer functional layer constant throughout the desired minimum film thickness.
炭素層全体の硬さはその場合には0.8GPaより大きい、特に10GPa以上の値に調整され、その際、膜厚>lμm、特に>2μmの場合にも硬さ約60HRCの鋼試験体上でVDI3824、シート4によるHF3に同じかそれより良好な、しかし特にHF1に同じ接着強度が達成される。本発明によるDLC膜の接触抵抗の測定によりδ=0.1mΩとδ=90mΩの間の値が得られ、その際、特に0.5mΩ〜10mΩの値に調整される、というのも一方では0.5mΩ未満のδ値が貴金属の大量の添加によってでしか達成しえないからであり、そのことによって製造コストが顕著に高められ、また他方では数回の使用には10mΩより大きい接触抵抗はすでに大きすぎるからである。 In that case, the hardness of the entire carbon layer is adjusted to a value greater than 0.8 GPa, in particular 10 GPa or more. In this case, even when the film thickness is> 1 μm, particularly> 2 μm, on the steel specimen having a hardness of about 60 HRC. VDI 3824, the same or better than HF3 with sheet 4, but especially the same adhesion strength with HF1. By measuring the contact resistance of the DLC film according to the present invention, a value between δ = 0.1 mΩ and δ = 90 mΩ is obtained, and in this case, in particular, the value is adjusted to a value of 0.5 mΩ to 10 mΩ. This is because a δ value of less than 5 mΩ can only be achieved by adding a large amount of noble metal, which significantly increases the manufacturing cost, and on the other hand, for several uses a contact resistance of more than 10 mΩ is already present. Because it is too big.
同時に本炭素層はMe−炭素に典型的な低い摩擦係数、特に膜粗さRa=0.01〜0.04;Rz DIN<0.8、特に<0.5でのピン・オン・ディスク試験でμ≦0.2、が特徴である。 At the same time, the carbon layer has a low coefficient of friction typical of Me-carbon, in particular film roughness R a = 0.01 to 0.04; R z DIN <0.8, in particular pin-on It is characterized by μ ≦ 0.2 in the disk test.
成長速度は約1〜3μm/hでありかつ、プロセスパラメータのほかに、荷重と支持にも依存する。殊にこの場合には、コーティングすべき部材が1回転、2回転または3回転しながら固定されるのがマグネットホルダにか、あるいは締め付けられてかないしは差し込まれてかということが影響する。またホルダの全体質量およびプラズマ透過率も重要であり、したがって例えば、中実材料のディスクの代わりに、例えばスポークディスク(Speichentellern)を使用することによる、軽量のホルダを用いてより高い成長速度および全体的により良好な膜品質が達成される。膜張力は0.8GPaであることができ、したがって硬質のDLC膜の通常範囲内である。さらにこのような膜は、よりやや低い硬度(9〜15GPa)で、顕著により低い摩擦係数を示し、この摩擦係数により発生する挿入力が減じられる。 The growth rate is about 1 to 3 μm / h and depends on the load and support in addition to the process parameters. In this case in particular, it has an influence on whether the member to be coated is fixed in one, two or three turns to the magnet holder or whether it is clamped or inserted. The overall mass of the holder and the plasma transmission rate are also important, so higher growth rates and overall with a lightweight holder, for example by using, for example, a spoke disc instead of a solid disc A better film quality is achieved. The membrane tension can be 0.8 GPa and is therefore within the normal range of hard DLC membranes. Furthermore, such membranes have a slightly lower hardness (9-15 GPa) and a significantly lower coefficient of friction, and the insertion force generated by this coefficient of friction is reduced.
さらにこれらの性質を少量の元素Ag、Au、Cu、Fe、Ir、Mo、Ni、Pd、Pt、Os、Rh、Ru、Wおよび/またはこれらの合金の、例えばCoスパッタリング、−蒸着、ターゲット材料もしくは類似物への合金による、添加によって改善することができ、および/または腐食/酸化に対して安定化させることができる。特に良好な伝導性を達成しようとするならば、最終的な層セット(Schichtpaket)で最低30から最大60%、特に40〜50%、の残留金属含量が有利に定められうる。 Furthermore, these properties can be obtained with small amounts of the elements Ag, Au, Cu, Fe, Ir, Mo, Ni, Pd, Pt, Os, Rh, Ru, W and / or alloys thereof, such as Co sputtering, vapor deposition, target materials. Alternatively, it can be improved by addition, by alloying to the like, and / or stabilized against corrosion / oxidation. If a particularly good conductivity is to be achieved, a residual metal content of at least 30 to a maximum of 60%, in particular 40-50%, can be advantageously defined in the final layer set.
このような金属含有のDLC膜の優れた機械的性質という理由からこの金属含有のDLC膜は、コーティングされた導電性材料の軸受機能が付加的に所望されている場合にも有利に使用されることができる。例えば、同時に電気信号の伝達に使用されるこのような導電性材料を軸受に有利に使用することができる。 Because of the excellent mechanical properties of such metal-containing DLC films, these metal-containing DLC films are also advantageously used when the bearing function of the coated conductive material is additionally desired. be able to. For example, such a conductive material used for transmitting electrical signals at the same time can be advantageously used for bearings.
実施例
次に本発明を種々のにつき説明する。全てのMe−DLC膜ないしは支持層を250℃未満の温度で銅材料上に、例えば独国特許出願公開第10018143号明細書で図1およびこれに属する記載[0076]〜[0085]で改変されたような、バルザース(Balzers)BAI 830 C製造装置で析出させた。さらに全てのコーティングにおいて、例えば上記明細書の方法例1から公知の、低電圧を用いた加熱−およびエッチング処理を伴った前処理を行なった。上記の公開明細書の相応して表示された箇所は、本願の組み込まれた構成要素であると宣言する。
EXAMPLES Next, the present invention will be described in various ways. All Me-DLC membranes or support layers are modified on a copper material at a temperature below 250 ° C., for example in DE 10018143 in FIG. 1 and the description [0076] to [0085] belonging thereto It was deposited on a Balzers BAI 830 C production device. Furthermore, all the coatings were subjected to pretreatments, for example known from Method Example 1 of the above specification, with heating and etching using low voltage. Correspondingly indicated parts of the above published specification are declared to be incorporated components of the present application.
比較例1
ここでは最終的な、すなわち外側の層範囲内に金属含有のDLC減摩層をCuSn8青銅上にクロム接着層を用いて、しかし付加的な支持層なしに施与した。上記の前処理の後
に付加的にクロム接着層を独国特許出願公開第10018143号明細書の方法例1と同様にして施与した。
Comparative Example 1
Here, the final, ie metal-containing DLC antifriction layer in the outer layer area, was applied on CuSn8 bronze with a chromium adhesion layer but without an additional support layer. After the above pretreatment, an additional chromium adhesion layer was applied in the same manner as in Method Example 1 of DE 10018143.
引き続き、Crターゲットが活性化させる際に6つのWCターゲットを各1kWの電力で活性化させ、そして両方のターゲットタイプを2分間同時に運転したままにした。その際、WCターゲットの電力を同じままのAr流量で2分間で1kWから3.5kWに高める。同時にそれら部材上で負の基板電圧をCr接着層の端部にかけられた電圧0Vから2分間で傾斜路状に300Vに高める。この300Vはつまり、WCターゲットが最大電力で運転すると達成されている。引き続き、Crターゲットのスイッチを切る。WCターゲットは6分間一定のAr流量および電力3.5kWで運転したままにし、次にアセチレンガス流量を11分間で200sccmに高め、かつ表1に記載したパラメータで60分間一定に維持する。続いてコーティング工程を終了する。 Subsequently, as the Cr target was activated, six WC targets were activated with a power of 1 kW each, and both target types were left running simultaneously for 2 minutes. At that time, the power of the WC target is increased from 1 kW to 3.5 kW in 2 minutes at the same Ar flow rate. At the same time, the negative substrate voltage on these members is increased to 300 V in a ramp shape in 2 minutes from the voltage 0 V applied to the end of the Cr adhesive layer. This 300V is achieved when the WC target is operated at maximum power. Subsequently, the Cr target is switched off. The WC target is left running at a constant Ar flow rate and power 3.5 kW for 6 minutes, then the acetylene gas flow rate is increased to 200 sccm over 11 minutes and maintained constant for 60 minutes with the parameters listed in Table 1. Subsequently, the coating process is terminated.
例2
例1との違いは、アセチレンガス流量が最後の工程段階で5分間で80sccmにしか高められず、かつその量で60分間維持されることである。
Example 2
The difference from Example 1 is that the acetylene gas flow rate is only increased to 80 sccm in 5 minutes in the last process step and maintained in that amount for 60 minutes.
例3
例1との違いは、アセチレンガス流量が最後の工程段階で2分間で30sccmに高められ、かつその量で60分間維持されることである。
Example 3
The difference from Example 1 is that the acetylene gas flow rate is increased to 30 sccm in 2 minutes and maintained in that amount for 60 minutes in the last process step.
比較例4
例1との違いは、アセチレンガスは添加されず、かつWCターゲットが、Crターゲットのスイッチが切られた後に60分間一定のAr流量で運転されることである。
Comparative Example 4
The difference from Example 1 is that no acetylene gas is added and the WC target is operated at a constant Ar flow rate for 60 minutes after the Cr target is switched off.
例5
例5については先ずCrN支持層を析出し、引き続き例3と同様にしてMe−DLC導電層を該支持層上に施与した。CrN支持層の析出は表5)に記載したパラメータに従って行ない、その際、プラズマ密度を高めるために付加的に熱陰極と補助陽極の間の中心軸で点火される低電圧アーク放電を行なった。
Example 5
For Example 5, a CrN support layer was first deposited, followed by applying a Me-DLC conductive layer on the support layer as in Example 3. The CrN support layer was deposited according to the parameters described in Table 5), in which a low-voltage arc discharge was additionally ignited on the central axis between the hot cathode and the auxiliary anode in order to increase the plasma density.
例6
例6については先ずクロム接着層を例1の場合と同様に施与した。これに続くWC含有の機能層をAgでドーピングした。
Example 6
For Example 6, a chromium adhesion layer was first applied as in Example 1. The subsequent functional layer containing WC was doped with Ag.
さらに、Crターゲットが活性化させる際に4つのWCターゲットを各1kWの電力で活性化させ、そして両方のターゲットタイプを2分間同時に運転したままにし、その際、WCターゲットの電力を同じままのAr流量で2分間で1kWから3.5kWに高める。同じく前記コーティング装置に取り付けられた2つの銀ターゲットをWCターゲットと同時に点火し、その電力を同じ時間で0から1kWに高める。同時にそれら部材上で負の基板電圧をCr接着層の端部にかけられた電圧0Vから2分間で傾斜路状に300Vに高める。引き続き、Crターゲットのスイッチを切る。WC−およびAgターゲットを一緒に6分間一定のAr流量で運転し、次にアセチレンガス流量を2分間で30sccmに高め、そして最後のコーティング段階中に表6によるパラメータを60分間一定に維持する。 In addition, when the Cr target is activated, the four WC targets are activated with 1 kW of power each, and both target types are left running simultaneously for 2 minutes, with the WC target power remaining the same as Ar Increase the flow rate from 1 kW to 3.5 kW in 2 minutes. Similarly, two silver targets attached to the coating apparatus are ignited simultaneously with the WC target, and the power is increased from 0 to 1 kW in the same time. At the same time, the negative substrate voltage on these members is increased to 300 V in a ramp shape in 2 minutes from the voltage 0 V applied to the end of the Cr adhesive layer. Subsequently, the Cr target is switched off. The WC- and Ag targets are operated together at a constant Ar flow for 6 minutes, then the acetylene gas flow is increased to 30 sccm in 2 minutes and the parameters according to Table 6 are kept constant for 60 minutes during the last coating phase.
膜の評価
表7からわかるように従来技術の膜は、比較例1および4に記載されているように、比較的高い接触抵抗を有する。例1にこの場合には典型的な例として、表面に向かって著しくC含量を有するa−C:H:Me−ないしはMe−DLC膜が示されている。例4には、遊離炭素のさしたる含量なしで、炭化物膜について示されている。
Membrane Evaluation As can be seen from Table 7, the prior art membrane has a relatively high contact resistance, as described in Comparative Examples 1 and 4. As a typical example in this case, Example 1 shows an aC: H: Me- or Me-DLC film having a significant C content toward the surface. Example 4 shows a carbide film with no significant free carbon content.
記載された測定値を5つの異なる測定点における平均値算出を経て接触ウェート(Kontaktgewicht)100gがかけられた後に各10sで求めた。接触ウェートの先端は、直径3mmの金から成る。各値の測定を金での前後の参考測定によって確認した。 The measured values described were determined at 10 s each after 100 g of contact weight (Kontaktgewich) was applied through calculation of the average value at five different measurement points. The tip of the contact weight is made of gold with a diameter of 3 mm. The measurement of each value was confirmed by reference measurement before and after gold.
差込み式接続の摩擦力の測定をマクロ摩擦試験台(Makroverschleisspruefstand)で次のものについて行なった。 The measurement of the friction force of the plug-in connection was carried out on a macro friction test stand (Makloverschleisspruestand) on:
DLCプラグ 標準プラグ
(スズ引き)
試験体ジオメトリ ライダ・オン・フラット ライダ・オン・フラット
ライダ直径 4mm 4mm
接点面 0.3mm2 0.3m2
試験雰囲気 ドライ ドライ
頻度 2.5sで1サイクル 2.5sで1サイクル
試験時間 3000サイクル 25サイクル
垂直力 20N 5N
摩擦行程(Reibweg) 3mm 3mm
DLC plug Standard plug
(Tinning)
Specimen Geometry Rider-on-flat Rider-on-flatrider diameter 4mm 4mm
Contact surface 0.3 mm 2 0.3 m 2
Test atmosphere Dry Dry frequency 1 cycle at 2.5 s 1 cycle test time at 2.5 s 3000 cycles 25 cycles Normal force 20N 5N
Friction stroke (Reibweg) 3mm 3mm
定義したサイクル数後の摩擦力の表示は試料の摩耗を示す。スズ引きした標準プラグは25サイクル後に摩擦力1000mNを有する。30を超えるサイクル数への増大は完全な破壊をもたらす。DLCコーティングされたプラグについての値は第3欄にある。 The display of the friction force after the defined number of cycles indicates the wear of the sample. The tinned standard plug has a friction force of 1000 mN after 25 cycles. Increasing the number of cycles beyond 30 results in complete destruction. Values for DLC coated plugs are in the third column.
驚くべきことにこの試験で、その遊離炭素の含量が中間範囲内にある膜(例2〜3)が顕著により低い接触抵抗を有することが明らかとなった。この低い接触抵抗は、例5に記載したような付加的なCrN支持層の施与の場合にもそのままであった。例6に記載したようなAgのCoスパッタリングによって接触抵抗をなおさらに低下させることができた。 Surprisingly, this test revealed that films whose free carbon content was in the middle range (Examples 2-3) had significantly lower contact resistance. This low contact resistance remained the same for the application of an additional CrN support layer as described in Example 5. Contact resistance could be further reduced by Ag Co sputtering as described in Example 6.
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PCT/CH2005/000333 WO2006005200A1 (en) | 2004-07-09 | 2005-06-15 | CONDUCTIVE MATERIAL COMPRISING AN Me-DLC HARD MATERIAL COATING |
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CN101001976B (en) | 2010-12-29 |
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KR101256231B1 (en) | 2013-04-17 |
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US20080075625A1 (en) | 2008-03-27 |
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